WO2001035428A1 - Kondensatorpulver - Google Patents
Kondensatorpulver Download PDFInfo
- Publication number
- WO2001035428A1 WO2001035428A1 PCT/EP2000/010622 EP0010622W WO0135428A1 WO 2001035428 A1 WO2001035428 A1 WO 2001035428A1 EP 0010622 W EP0010622 W EP 0010622W WO 0135428 A1 WO0135428 A1 WO 0135428A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- niobium
- powder
- tantalum
- capacitor
- barrier layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12181—Composite powder [e.g., coated, etc.]
Definitions
- the present invention relates to a powder for the production of electrolytic capacitors, in particular a powder for the production of anodes for electrolytic capacitors.
- the literature describes in particular the earth acid metals niobium and tantalum as starting materials for the production of such capacitors.
- the capacitors are produced by sintering the finely divided powders to produce a structure with a large surface area, oxidizing the surface of the sintered body to produce a non-conductive insulating layer and applying the counterelectrode in the form of a layer of manganese dioxide or a conductive polymer.
- the special suitability of the earth acid metal powder is derived from the large relative dielectric constant of the pentoxides.
- tantalum powder has gained technical importance for capacitor production. This is based on the one hand on the reproducibility of the production of finely divided tantalum powder and on the other hand on the fact that the insulating oxide layer made of tantalum pentoxide has a particularly pronounced stability. This may be due to the fact that, unlike niobium, tantalum does not form a stable suboxide.
- tantalum has a very high density of 16.6 g / cm 3 . This limits the tendency to reduce weight, particularly of portable electronic devices such as mobile phones, etc. Due to the fact that the density of niobium is only half that of tantalum, given the same geometry and the same properties of the oxide layer, specific capacities that are twice as high as with tantalum powders can be achieved.
- the material properties that determine the capacitance of a capacitor the insulating pentoxide layer in niobium on the one hand and in tantalum on the other have partly opposing influences.
- the capacitance of a capacitor is higher, the higher the relative dielectric constant of the insulator layer. It is lower, the thicker the thickness of the insulator layer required for the intended operating voltage.
- the higher dielectric constant of niobium pentoxide compared to 26 of tantalum pentoxide is compensated for by the greater thickness of the pentoxide layer required for niobium compared to tantalum. For a given anodizing economy, the thickness growth of the tantalum pentoxide layer is approximately
- niobium capacitors have so far been reserved for the area of low specific capacities with a small specific surface area and lower quality.
- the object of the present invention is to overcome the disadvantages of the known niobium capacitors.
- niobium powder with a surface coating composed of at least one of the elements Al, Si, Ti, Zr, Mo, W, Y and Ta are outstandingly suitable for the production of niobium capacitors.
- the specific capacitance, based on the surface of the capacitor anode, of such capacitors made from coated niobium powder is higher than that of pure niobium anodes and that niobium anodes with a low residual current are obtained.
- the present invention accordingly relates to niobium powder with a surface coating of at least one of the elements Al, Si, Ti, Zr, Mo, W, Y and Ta.
- the invention also relates to sintered anodes for capacitors consisting of niobium, the anodes having a surface content of at least one of the elements Al, Si, Ti, Zr, Mo, W, Y and Ta.
- the invention further provides sintered anodes made of niobium provided with a niobium oxide barrier layer, the barrier layer having a content of at least one of the elements Al, Si, Ti, Zr, Mo, W, Y and Ta.
- the invention further relates to electrolytic capacitors which consist of a niobium anode, a niobium oxide barrier layer, a semiconducting cathode and an electrolyte, the niobium oxide barrier layer having at least one of the surface modification elements.
- Preferred contents of the surface modification elements in the barrier layer are below 25 atom%, based on the total metal content of the barrier layer, contents of up to 20 atom% being particularly preferred. Are further preferred
- the amount of the surface coating is preferably less than 18 atom%, in particular less than 15 atom%, more preferably 1.5 to 12 atom%.
- Preferred surface modification elements are Ti, Zr and Ta, Ta is particularly preferred. It is assumed that the surface modification element of the niobium powder remains essentially on the surface even during the further processing to form the capacitor, since the temperatures used during the further processing of usually below 1250 ° C. with respect to the melting point of niobium of 2500 ° C. for solid-state Diffusions are relatively low.
- the present invention accordingly makes it possible to produce niobium capacitors that exceed the currently most capacitive available tantalum capacitors.
- Such tantalum capacitors have specific capacities of 100,000 ⁇ FV / g at anodizing voltages of 40 V, for example.
- An inventive niobium capacitor with a corresponding geometry has specific capacities of above 300,000 ⁇ FV / g.
- the invention also relates to the process for producing the capacitor powders according to the invention.
- the method consists in soaking a niobium powder in the solution of a hydrolyzable or decomposable compound of the surface modification element, separating the powder from the solution, hydrolyzing or decomposing the compound adhering to the powder, and then reducing the hydrolyzate to the metal.
- Suitable niobium powders are powders which have been obtained by heating niobium metal ingots melted by means of an electron beam in a hydrogen atmosphere, grinding the material which is embrittled by the absorption of hydrogen and removing the hydrogen by heating in vacuo.
- Niobium flakes according to WO 98/19811 are also suitable.
- niobium powders are suitable, which according to the applicant's unpublished proposals according to DE 198 31 280, DE 198 47 012 and PCT 99/09772 by reduction of niobium pentoxide in liquid or gaseous magnesium, optionally after prior reduction to suboxide using hydrogen.
- niobium powder which contains one or more of the elements
- Al, Ti, Mo, W, Hf, Zr or Ta as alloy components i.e. in an even distribution in amounts up to 5% by weight.
- Organic tantalum compounds which are soluble in water or organic solvents are particularly suitable as decomposable or hydrolyzable tantalum compounds. Tantalum oxalate is suitable as the water-soluble organic tantalum compound.
- the alcohol-soluble tantalum alkoxides having 1 to 8 carbon atoms, such as tantalum methoxide, tantalum ethoxide, tantalum propoxide, tantalum butoxide, etc., including tantaloctoates, are also suitable, and also organometallic compounds of tantalum according to US Pat. No. 5,914,417.
- the organic tantalum compounds are preferably used in dilute solutions, even to the extent that they are liquid per se.
- Water is suitable as a solvent if the tantalum compound is water-resistant.
- the alkoxides are preferably used in absolute alcohol or in other organic solvents with such low acidity that no hydrolysis takes place without the entry of water, such as toluene or benzene.
- the respective corresponding alcohol is preferred for the solution of the alkoxides.
- the concentration of the tantalum compound in the respective solvent is preferably 1 to 20% by weight, particularly preferably 1 to 10% by weight and further preferably 1 to 5% by weight.
- the niobium powder is suspended in the solution of the organic tantalum compound and left for a while to ensure good wetting. Typically, this can be 10 minutes to 1 hour. In order to ensure a good penetration of porous niobium powder or niobium powder agglomerates, it may be advisable to put the niobium powder under vacuum in a vacuum container, to rinse the container with solvent vapors if necessary, and then to introduce the treatment solution into the evacuated vessel.
- the treated niobium powder can be separated from the solution by filtering, centrifuging or decanting.
- tantalum oxides are used, they are carefully hydrolyzed in air without moisture or in humidified air, preferably with gentle heating to 50 to 100 ° C. If necessary, steam can be introduced towards the end of the treatment to complete the hydrolysis. in the
- the hydrolysis is carried out in an aqueous alkaline solution, for example an ammonia solution or sodium hydroxide solution.
- the hydrolysis is particularly preferably carried out in an ammonia-containing gas stream.
- the hydrolysis should be carried out gradually over several hours.
- the immersion and hydrolysis can be repeated several times. It is preferred to immerse the niobium powder in less concentrated solutions, but instead several times.
- the niobium powder treated in this way is preferably reduced with a getter metal with a sufficiently high vapor pressure at 850 to 1000 ° C.
- getter metal a sufficiently high vapor pressure at 850 to 1000 ° C.
- the niobium powder reduced in this way washed with mineral acids and then washed and dried acid-free with demineralized water, is pressed into pellets in suitable matrices up to a press density of 2.5 to 3.5 g / cm 3 and then at 1100 to 1250 ° C. sintered in a known manner.
- the sintered anodes are contacted with a tantalum and / or niobium wire, preferably a niobium wire, unless the contact wire has already been inserted into the die during pressing.
- aqueous solutions of ammonium paratungstate are suitable for the production of tungsten coatings
- aqueous solutions of ammonium heptamolybdate which are thermally decomposable are suitable and preferred for the production of molybdenum coatings.
- An aqueous solution of TiOSO 4 which is hydrolyzed by means of an aqueous base, for example ammonia, or pure TiC, which is subsequently hydrolyzed with water vapor, is suitable for producing titanium coatings.
- a high-purity niobium powder is used, which was obtained by magnesium vapor reduction of niobium suboxide Nb0 2 according to DE-A 19 831 280.
- the powder has a BET specific surface area of 3.02 m 2 / g.
- Various amounts of sample are immersed in an ethanol solution containing the amount of tantalum ethoxide shown in Table 1.
- a comparison sample is treated in pure ethanol solution. After 30 minutes, the sample amounts are separated from the respective solution by filtration and left to stand in ambient air for 15 minutes.
- the samples are then dried at 95 ° C. for 45 minutes, washed with demineralized water at 80 ° C. and dried again.
- the samples are then reduced under an argon atmosphere with magnesium vapor at 850 ° C to 950 ° C (temperature gradient in the furnace).
- the samples are pressed in the customary manner around a niobium wire at a press density of 3.14 g / cm 3 to form anode pellets and sintered at 1,150 ° C. for 20 minutes.
- the sintered anodes are formed in 0.1% phosphoric acid up to a formation voltage of 40 V.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Powder Metallurgy (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Inorganic Insulating Materials (AREA)
- Catalysts (AREA)
- Electrodes For Compound Or Non-Metal Manufacture (AREA)
Abstract
Description
Claims
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00975948A EP1230655B1 (de) | 1999-11-09 | 2000-10-27 | Kondensatorpulver |
AU13891/01A AU770489B2 (en) | 1999-11-09 | 2000-10-27 | Capacitor powder |
IL14903800A IL149038A0 (en) | 1999-11-09 | 2000-10-27 | Capacitor powder |
US10/129,536 US6821314B1 (en) | 1999-11-09 | 2000-10-27 | Capacitor powder |
BRPI0015400A BRPI0015400B1 (pt) | 1999-11-09 | 2000-10-27 | capacitor eletrolítico, anodo de capacitor, pó de capacitor e processo para preparação de um pó de capacitor |
DE50010419T DE50010419D1 (de) | 1999-11-09 | 2000-10-27 | Kondensatorpulver |
JP2001537079A JP4999135B2 (ja) | 1999-11-09 | 2000-10-27 | コンデンサー粉末 |
IL149038A IL149038A (en) | 1999-11-09 | 2002-04-09 | Capacitor powder |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19953946A DE19953946A1 (de) | 1999-11-09 | 1999-11-09 | Kondensatorpulver |
DE19953946.4 | 1999-11-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001035428A1 true WO2001035428A1 (de) | 2001-05-17 |
Family
ID=7928474
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2000/010622 WO2001035428A1 (de) | 1999-11-09 | 2000-10-27 | Kondensatorpulver |
Country Status (14)
Country | Link |
---|---|
US (1) | US6821314B1 (de) |
EP (1) | EP1230655B1 (de) |
JP (1) | JP4999135B2 (de) |
KR (1) | KR100715408B1 (de) |
CN (1) | CN1211819C (de) |
AU (1) | AU770489B2 (de) |
BR (1) | BRPI0015400B1 (de) |
CZ (1) | CZ301939B6 (de) |
DE (2) | DE19953946A1 (de) |
IL (2) | IL149038A0 (de) |
PT (1) | PT1230655E (de) |
RU (1) | RU2253919C2 (de) |
SV (1) | SV2002000213A (de) |
WO (1) | WO2001035428A1 (de) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6759026B2 (en) | 1998-09-16 | 2004-07-06 | Cabot Corporation | Methods to partially reduce a niobium metal oxide and oxygen reduced niobium oxides |
EP1502680A1 (de) * | 2002-01-21 | 2005-02-02 | Kawatetsu Mining Co., LTD. | Niobpulver und trockenelektrolytkondensator |
US7241436B2 (en) | 1998-09-16 | 2007-07-10 | Cabot Corporation | Methods to partially reduce certain metal oxides and oxygen reduced metal oxides |
US7445679B2 (en) | 2003-05-16 | 2008-11-04 | Cabot Corporation | Controlled oxygen addition for metal material |
US7515397B2 (en) | 2003-05-19 | 2009-04-07 | Cabot Corporation | Methods of making a niobium metal oxide and oxygen reduced niobium oxides |
US7655214B2 (en) | 2003-02-26 | 2010-02-02 | Cabot Corporation | Phase formation of oxygen reduced valve metal oxides and granulation methods |
US7811355B2 (en) | 2003-11-10 | 2010-10-12 | Showa Denko K.K. | Niobium powder for capacitor, niobium sintered body and capacitor |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2001277734B2 (en) † | 2000-08-10 | 2007-01-04 | Showa Denko K.K. | Niobium powder, sinter thereof, and capacitor using the body |
DE10044451C1 (de) * | 2000-09-08 | 2002-04-04 | Epcos Ag | Elektrode und Kondensator mit der Elektrode |
JP2004143477A (ja) * | 2002-10-22 | 2004-05-20 | Cabot Supermetal Kk | ニオブ粉末およびその製造方法、並びにそれを用いた固体電解コンデンサ |
US20080011124A1 (en) * | 2004-09-08 | 2008-01-17 | H.C. Starck Gmbh & Co. Kg | Deoxidation of Valve Metal Powders |
WO2007020464A1 (en) * | 2005-08-19 | 2007-02-22 | Avx Limited | Solid state capacitors and method of manufacturing them |
GB0517952D0 (en) * | 2005-09-02 | 2005-10-12 | Avx Ltd | Method of forming anode bodies for solid state capacitors |
DE102005043829A1 (de) * | 2005-09-13 | 2007-04-05 | H.C. Starck Gmbh | Verfahren zur Herstellung von Elektrolytkondensatoren mit hoher Nennspannung |
GB0622463D0 (en) * | 2006-11-10 | 2006-12-20 | Avx Ltd | Powder modification in the manufacture of solid state capacitor anodes |
US7760487B2 (en) * | 2007-10-22 | 2010-07-20 | Avx Corporation | Doped ceramic powder for use in forming capacitor anodes |
US7768773B2 (en) * | 2008-01-22 | 2010-08-03 | Avx Corporation | Sintered anode pellet etched with an organic acid for use in an electrolytic capacitor |
US7760488B2 (en) * | 2008-01-22 | 2010-07-20 | Avx Corporation | Sintered anode pellet treated with a surfactant for use in an electrolytic capacitor |
US7852615B2 (en) * | 2008-01-22 | 2010-12-14 | Avx Corporation | Electrolytic capacitor anode treated with an organometallic compound |
US8203827B2 (en) * | 2009-02-20 | 2012-06-19 | Avx Corporation | Anode for a solid electrolytic capacitor containing a non-metallic surface treatment |
WO2012086272A1 (ja) * | 2010-12-24 | 2012-06-28 | 昭和電工株式会社 | タングステン粉、コンデンサの陽極体及び電解コンデンサ |
WO2014104178A1 (ja) * | 2012-12-27 | 2014-07-03 | 昭和電工株式会社 | ニオブコンデンサ陽極用化成体及びその製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3849124A (en) * | 1969-12-05 | 1974-11-19 | Norton Co | Capacitor powder |
US3867129A (en) * | 1974-02-05 | 1975-02-18 | Metallurgie Hoboken | Anodically oxidizable metal powder |
GB2106938A (en) * | 1981-09-29 | 1983-04-20 | Standard Telephones Cables Ltd | Tantalum coated alumina articles |
EP0582844A1 (de) * | 1992-08-05 | 1994-02-16 | ROEDERSTEIN SPEZIALFABRIKEN FÜR BAUELEMENTE DER ELEKTRONIK UND KONDENSATOREN DER STARKSTROMTECHNIK GmbH | Kondensator, insbesondere Elektrolytkondensator |
US5914417A (en) * | 1995-01-03 | 1999-06-22 | H.C. Starck Gmbh & Co. Kg | Nb, Ta and Ti salt solutions and processes for the production and use thereof |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3684929A (en) * | 1969-07-31 | 1972-08-15 | Mallinckrodt Chemical Works | Electrolytic capacitor anode comprising oxide filmed hollow bodies |
JPS5539899B2 (de) * | 1971-08-09 | 1980-10-14 | ||
US3976435A (en) * | 1971-09-12 | 1976-08-24 | P. R. Mallory & Co. Inc. | Porous electrodes and electrolytic capacitors made therefrom |
US3986869A (en) * | 1974-03-01 | 1976-10-19 | Showa Denko Kabushiki Kaisha | Process for making electrolytic capacitor anodes forming a continuum of anodes and cutting the continuum into individual bodies |
US4338354A (en) * | 1980-04-28 | 1982-07-06 | International Standard Electric Corporation | Coating powdered material |
DE3130392C2 (de) * | 1981-07-31 | 1985-10-17 | Hermann C. Starck Berlin, 1000 Berlin | Verfahren zur Herstellung reiner agglomerierter Ventilmetallpulver für Elektrolytkondensatoren, deren Verwendung und Verfahren zur Herstellung von Sinteranoden |
US5034857A (en) | 1989-10-06 | 1991-07-23 | Composite Materials Technology, Inc. | Porous electrolytic anode |
US4973526A (en) * | 1990-02-15 | 1990-11-27 | Dow Corning Corporation | Method of forming ceramic coatings and resulting articles |
JPH05243101A (ja) * | 1992-02-26 | 1993-09-21 | Nec Corp | 固体電解コンデンサ及びその製造方法 |
US5993513A (en) * | 1996-04-05 | 1999-11-30 | Cabot Corporation | Method for controlling the oxygen content in valve metal materials |
US6165623A (en) | 1996-11-07 | 2000-12-26 | Cabot Corporation | Niobium powders and niobium electrolytic capacitors |
JP3254163B2 (ja) * | 1997-02-28 | 2002-02-04 | 昭和電工株式会社 | コンデンサ |
US6051326A (en) * | 1997-04-26 | 2000-04-18 | Cabot Corporation | Valve metal compositions and method |
US6282419B1 (en) | 1997-08-20 | 2001-08-28 | Ericsson Inc | Apparatus and method for mobile terminal rescans during roaming |
JP3233084B2 (ja) * | 1997-11-06 | 2001-11-26 | 日本電気株式会社 | 固体電解コンデンサの陽極体の製造方法 |
JPH11214242A (ja) * | 1998-01-26 | 1999-08-06 | Murata Mfg Co Ltd | 導電性ペーストおよびそれを用いた積層セラミック電子部品 |
BRPI9917635B1 (pt) * | 1998-05-06 | 2017-06-06 | Starck H C Gmbh Co Kg | pó de nióbio na forma de partículas aglomeradas primárias e método para a obtenção de um anodo de capacitor |
DE19831280A1 (de) | 1998-07-13 | 2000-01-20 | Starck H C Gmbh Co Kg | Verfahren zur Herstellung von Erdsäuremetallpulvern, insbesondere Niobpulvern |
DE19847012A1 (de) | 1998-10-13 | 2000-04-20 | Starck H C Gmbh Co Kg | Niobpulver und Verfahren zu dessen Herstellung |
JP2000243665A (ja) * | 1999-02-17 | 2000-09-08 | Matsushita Electric Ind Co Ltd | 固体電解コンデンサおよびその製造方法 |
EP1204126B1 (de) * | 1999-07-15 | 2005-09-14 | Showa Denko Kabushiki Kaisha | Niob pulver, gesinterter körper und daraus bestehender kondensator |
JP4683512B2 (ja) * | 2000-11-30 | 2011-05-18 | 昭和電工株式会社 | コンデンサ用粉体、それを用いた焼結体及びそれを用いたコンデンサ |
-
1999
- 1999-11-09 DE DE19953946A patent/DE19953946A1/de not_active Withdrawn
-
2000
- 2000-10-27 PT PT00975948T patent/PT1230655E/pt unknown
- 2000-10-27 KR KR1020027005959A patent/KR100715408B1/ko not_active IP Right Cessation
- 2000-10-27 DE DE50010419T patent/DE50010419D1/de not_active Expired - Lifetime
- 2000-10-27 JP JP2001537079A patent/JP4999135B2/ja not_active Expired - Lifetime
- 2000-10-27 US US10/129,536 patent/US6821314B1/en not_active Expired - Lifetime
- 2000-10-27 EP EP00975948A patent/EP1230655B1/de not_active Expired - Lifetime
- 2000-10-27 CZ CZ20021584A patent/CZ301939B6/cs not_active IP Right Cessation
- 2000-10-27 IL IL14903800A patent/IL149038A0/xx active IP Right Grant
- 2000-10-27 AU AU13891/01A patent/AU770489B2/en not_active Ceased
- 2000-10-27 WO PCT/EP2000/010622 patent/WO2001035428A1/de active IP Right Grant
- 2000-10-27 RU RU2002115641/09A patent/RU2253919C2/ru active
- 2000-10-27 CN CNB008153027A patent/CN1211819C/zh not_active Expired - Lifetime
- 2000-10-27 BR BRPI0015400A patent/BRPI0015400B1/pt not_active IP Right Cessation
- 2000-11-09 SV SV2000000213A patent/SV2002000213A/es active IP Right Grant
-
2002
- 2002-04-09 IL IL149038A patent/IL149038A/en not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3849124A (en) * | 1969-12-05 | 1974-11-19 | Norton Co | Capacitor powder |
US3867129A (en) * | 1974-02-05 | 1975-02-18 | Metallurgie Hoboken | Anodically oxidizable metal powder |
GB2106938A (en) * | 1981-09-29 | 1983-04-20 | Standard Telephones Cables Ltd | Tantalum coated alumina articles |
EP0582844A1 (de) * | 1992-08-05 | 1994-02-16 | ROEDERSTEIN SPEZIALFABRIKEN FÜR BAUELEMENTE DER ELEKTRONIK UND KONDENSATOREN DER STARKSTROMTECHNIK GmbH | Kondensator, insbesondere Elektrolytkondensator |
US5914417A (en) * | 1995-01-03 | 1999-06-22 | H.C. Starck Gmbh & Co. Kg | Nb, Ta and Ti salt solutions and processes for the production and use thereof |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6759026B2 (en) | 1998-09-16 | 2004-07-06 | Cabot Corporation | Methods to partially reduce a niobium metal oxide and oxygen reduced niobium oxides |
US7241436B2 (en) | 1998-09-16 | 2007-07-10 | Cabot Corporation | Methods to partially reduce certain metal oxides and oxygen reduced metal oxides |
US7445762B2 (en) | 1998-09-16 | 2008-11-04 | Cabot Corporation | Method to partially reduce calcined niobium metal oxide and oxygen reduced niobium oxides |
EP1502680A1 (de) * | 2002-01-21 | 2005-02-02 | Kawatetsu Mining Co., LTD. | Niobpulver und trockenelektrolytkondensator |
EP1502680A4 (de) * | 2002-01-21 | 2007-04-04 | Kawatetsu Mining | Niobpulver und trockenelektrolytkondensator |
US7655214B2 (en) | 2003-02-26 | 2010-02-02 | Cabot Corporation | Phase formation of oxygen reduced valve metal oxides and granulation methods |
US7445679B2 (en) | 2003-05-16 | 2008-11-04 | Cabot Corporation | Controlled oxygen addition for metal material |
US7515397B2 (en) | 2003-05-19 | 2009-04-07 | Cabot Corporation | Methods of making a niobium metal oxide and oxygen reduced niobium oxides |
US8110172B2 (en) | 2003-05-19 | 2012-02-07 | Cabot Corporation | Methods of making a niobium metal oxide and oxygen reduced niobium oxides |
US7811355B2 (en) | 2003-11-10 | 2010-10-12 | Showa Denko K.K. | Niobium powder for capacitor, niobium sintered body and capacitor |
Also Published As
Publication number | Publication date |
---|---|
CZ301939B6 (cs) | 2010-08-04 |
DE19953946A1 (de) | 2001-05-10 |
EP1230655B1 (de) | 2005-05-25 |
KR20020065513A (ko) | 2002-08-13 |
IL149038A (en) | 2007-07-04 |
US6821314B1 (en) | 2004-11-23 |
AU770489B2 (en) | 2004-02-26 |
CN1211819C (zh) | 2005-07-20 |
JP2003514378A (ja) | 2003-04-15 |
CN1387667A (zh) | 2002-12-25 |
IL149038A0 (en) | 2002-11-10 |
AU1389101A (en) | 2001-06-06 |
SV2002000213A (es) | 2002-02-05 |
EP1230655A1 (de) | 2002-08-14 |
CZ20021584A3 (cs) | 2002-07-17 |
DE50010419D1 (de) | 2005-06-30 |
PT1230655E (pt) | 2005-09-30 |
KR100715408B1 (ko) | 2007-05-08 |
BRPI0015400B1 (pt) | 2016-04-19 |
JP4999135B2 (ja) | 2012-08-15 |
BR0015400A (pt) | 2002-06-25 |
RU2253919C2 (ru) | 2005-06-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1230655B1 (de) | Kondensatorpulver | |
EP1508550B1 (de) | Verfahren zur Herstellung von Niobsuboxid | |
DE69835717T2 (de) | Ultraschallbeschichtetes Substrat zur Verwendung in einem Kondensator und Herstellungsverfahren | |
DE10307716B4 (de) | Ventilmetall-Pulver und Verfahren zu deren Herstellung | |
DE60112962T2 (de) | Mischungen aus tantal und tantalnitridpulver für substrate für elektrolytische kondensatoren | |
DE69933792T2 (de) | Niobkondensator und verfahren zu dessen herstellung | |
US20030010407A1 (en) | Method for forming titanium oxide film and titanium electrolytic capacitor | |
WO2013021004A1 (de) | Verfahren zur herstellung von elektrolytkondensatoren aus ventilmetallpulvern | |
EP1314175B2 (de) | Kondensatoranode auf basis niob | |
WO2007125026A2 (de) | Verfahren zur herstellung einer beschichtung eines porösen, elektrisch leitfähigen trägermaterials mit einem dielektrikum und herstellung von kondensatoren hoher kapazitätsdichte unter einsatz dieses verfahrens | |
WO2006027119A2 (de) | Desoxidation von ventilmetallpulvern | |
JPH07220982A (ja) | 固体電解コンデンサの製造方法 | |
DE1120023B (de) | Verfahren zur Herstellung eines aus Titandioxyd bestehenden Dielektrikums fuer Kondensatoren | |
DE1101619B (de) | Verfahren zum Herstellen einer Elektrode mit grosser Oberflaeche fuer einen Elektrolytkondensator | |
EP0440936A2 (de) | Hochkapazitive Erdsäuremetallpulver, Verfahren zu ihrer Herstellung sowie deren Verwendung | |
MXPA02004597A (en) | Capacitor powder | |
DE3418086A1 (de) | Anodische oxidation von tantal | |
JPH0766083A (ja) | 固体電解コンデンサおよびその製造方法 | |
EP1162636A1 (de) | Erdsäuremetall-Elektrolytkondensatoren oder -anoden | |
DE1194060B (de) | Verfahren zur Herstellung von Elektrolyt-Kondensatoren | |
DE1198936B (de) | Verfahren zur Herstellung einer Anode fuer einen Elektrolytkondensator | |
DE1222585B (de) | Verfahren zur Herstellung eines Titan-Elektrolytkondensators |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2000975948 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 149038 Country of ref document: IL |
|
WWE | Wipo information: entry into national phase |
Ref document number: 008153027 Country of ref document: CN |
|
ENP | Entry into the national phase |
Ref document number: 2001 537079 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13891/01 Country of ref document: AU |
|
WWE | Wipo information: entry into national phase |
Ref document number: PV2002-1584 Country of ref document: CZ |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10129536 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: PA/a/2002/004597 Country of ref document: MX Ref document number: 1020027005959 Country of ref document: KR |
|
ENP | Entry into the national phase |
Ref document number: 2002 2002115641 Country of ref document: RU Kind code of ref document: A |
|
WWP | Wipo information: published in national office |
Ref document number: PV2002-1584 Country of ref document: CZ |
|
WWP | Wipo information: published in national office |
Ref document number: 1020027005959 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 2000975948 Country of ref document: EP |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
WWG | Wipo information: grant in national office |
Ref document number: 13891/01 Country of ref document: AU |
|
WWG | Wipo information: grant in national office |
Ref document number: 2000975948 Country of ref document: EP |