WO2013021004A1 - Verfahren zur herstellung von elektrolytkondensatoren aus ventilmetallpulvern - Google Patents
Verfahren zur herstellung von elektrolytkondensatoren aus ventilmetallpulvern Download PDFInfo
- Publication number
- WO2013021004A1 WO2013021004A1 PCT/EP2012/065518 EP2012065518W WO2013021004A1 WO 2013021004 A1 WO2013021004 A1 WO 2013021004A1 EP 2012065518 W EP2012065518 W EP 2012065518W WO 2013021004 A1 WO2013021004 A1 WO 2013021004A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- tantalum
- wire
- anode
- sintered body
- hydrogen peroxide
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000000843 powder Substances 0.000 title description 11
- 229910052751 metal Inorganic materials 0.000 title description 7
- 239000002184 metal Substances 0.000 title description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 100
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 72
- 238000000034 method Methods 0.000 claims abstract description 47
- 238000005245 sintering Methods 0.000 claims abstract description 25
- 239000007800 oxidant agent Substances 0.000 claims abstract description 22
- 239000003792 electrolyte Substances 0.000 claims abstract description 14
- 238000003825 pressing Methods 0.000 claims abstract description 12
- 238000001816 cooling Methods 0.000 claims abstract description 11
- 239000007788 liquid Substances 0.000 claims abstract description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 41
- 238000011282 treatment Methods 0.000 claims description 20
- 230000003647 oxidation Effects 0.000 claims description 18
- 238000007254 oxidation reaction Methods 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 238000009499 grossing Methods 0.000 claims description 3
- 230000001629 suppression Effects 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 abstract 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 238000005452 bending Methods 0.000 description 10
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000000243 solution Substances 0.000 description 8
- 238000003860 storage Methods 0.000 description 7
- 239000002904 solvent Substances 0.000 description 6
- -1 niobium metals Chemical class 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical class OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 239000011164 primary particle Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- DSSYKIVIOFKYAU-XCBNKYQSSA-N (R)-camphor Chemical compound C1C[C@@]2(C)C(=O)C[C@@H]1C2(C)C DSSYKIVIOFKYAU-XCBNKYQSSA-N 0.000 description 1
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 241000723346 Cinnamomum camphora Species 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 229960000846 camphor Drugs 0.000 description 1
- 229930008380 camphor Natural products 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 239000011255 nonaqueous electrolyte Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 1
- 238000002459 porosimetry Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 238000005029 sieve analysis Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 150000003626 triacylglycerols Chemical class 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 235000013311 vegetables Nutrition 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/24—After-treatment of workpieces or articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/11—Making porous workpieces or articles
- B22F3/1146—After-treatment maintaining the porosity
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/002—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature
- B22F7/004—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature comprising at least one non-porous part
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0032—Processes of manufacture formation of the dielectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49204—Contact or terminal manufacturing
Definitions
- the invention relates to a process for the production of tantalum sintered bodies and of tantalum anodes for tantalum electrolytic capacitors with stable wire bending strength, to tantalum sintered bodies and anodes produced by this process and to the use of such tantalum anodes for the production of tantalum electrolytic capacitors.
- tantalum powder is pressed around a tantalum semi-finished product, usually a wire or strip or a sheet, and at high temperatures of generally 1000-2000 ° C. in a high vacuum to form a (porous) sintered body having approx 30-50% of the theoretical density of the tantalum and a high internal surface sintered. Subsequently, by anodic oxidation in a mostly aqueous electrolyte, e.g.
- the counterelectrode (cathode) in the form of a layer of manganese dioxide or of a conductive polymer, such as e.g. a polypyrrole or polythiophene produced. After applying a graphite layer and the contacting of the cathode via a conductive silver layer, the capacitor is finally embedded in epoxy resin.
- a temperature treatment at 200 - 400 ' ⁇ to heal stresses and defects in the dielectric layer.
- the application of the manganese dioxide layer is carried out by impregnation in manganese nitrate solutions with subsequent pyrolysis at> 300 ° C with elimination of nitrogen oxides, these steps are repeated several times until the entire inner surface of the anode body is covered as possible. In these steps, the tantalum anodes are thus subjected to thermo-mechanical stress, which usually leads to a certain failure rate.
- tantalum capacitors require not only high volume specific capacitance, low equivalent series resistance (ESR), and low leakage current but also high stability against external loads.
- ESR equivalent series resistance
- the tantalum wire located in the tantalum anodes fulfills the sole purpose of electrical contacting of the capacitor anode.
- the wire usually has to protrude at least 10 mm from the tantalum sintered body.
- the mass ratio of tantalum powder to tantalum wire is increasingly shifted in the direction of the wire, ie for the production of smaller capacitor types only dimensions of about 2 x 1 x 1 mm, only a few milligrams of powder but depending on the wire diameter, the multiple mass of tantalum wire needed, ie the tantalum wire is increasingly becoming the cost-determining factor.
- the manufacturers of such capacitors therefore continuously strive to use thinner wires always.
- the amount of wire embrittlement tends to increase when the specific surface area of the tantalum powders used is successively increased to increase the volume-specific capacitance of the capacitors.
- the embrittlement of tantalum wires in anodes increases dramatically if, instead of powders having a specific surface area of 2 m 2 / g, those having a surface area of 3 m 2 / g and higher are used for their production.
- thinner tantalum wires with diameters smaller than 0.3 mm become brittle faster than thicker wires.
- the embrittlement of the tantalum wires directly after sintering is low (ie a high bending strength of the wires is present), but already a short time (several hours) after sintering of the tantalum sintered body increases sharply, especially if the sintered bodies under increased humidity be stored. It is further observed that the embrittlement of the tantalum wires by the above-mentioned temperature treatments during the capacitor manufacturing, such as in the anodic oxidation or annealing, still further increases or decrease the bending strength of the wires.
- the embrittlement can assume such dimensions that the tantalum wires of the sintered bodies or the anodes can break off even a short time after sintering or anodic oxidation at the slightest vibration.
- the effect of embrittlement is worst at the point where the wire dips into the sintered body or in the anode, since the greatest forces act here when bending.
- tantalum and niobium metals can be embrittled by reaction with various gases and vapors at elevated temperature (e.g., 300 ° C) even with only a short application. It is also known that in the sintering of finer tantalum powder with oxygen contents greater than 1600 ppm and use of high sintering temperatures embrittlement of the wires can occur by oxygen diffusion. To prevent this, the use of tantalum wires with dopants is proposed, such as e.g.
- 10-1000 ppm rare earth dopants (US 3,268,328), 10-1000 ppm yttrium (US 3,497,402), 50-700 ppm silicon (US 4,235,629) or a combination of 50-1000 ppm silicon and 50-1000 ppm of finely divided metal oxides.
- the use of these wires brings but in the present case no advantage over undoped wire.
- tantalum can be significantly embrittled by hydrogen in very low concentrations of, for example, a few hundred ppm even at room temperature, since the diffusion rate of the hydrogen atoms is markedly higher in comparison to oxygen or nitrogen.
- tantalum can be significantly embrittled by hydrogen in very low concentrations of, for example, a few hundred ppm even at room temperature, since the diffusion rate of the hydrogen atoms is markedly higher in comparison to oxygen or nitrogen.
- WO 2008-134439 platinum group
- the embrittlement in these cases is effected by hydrogen, which is obtained by reaction of the tantalum sintered bodies or anodes with atmospheric moisture (during storage) or water (eg during immersion of the Sintered body in the electrolytes for anodic oxidation) is formed according to Equation 2 Ta + 5 H 2 O -> Ta 2 O 5 + 5 H 2 .
- the object of the invention was therefore to provide a method which does not have the abovementioned disadvantages and which allows the cost-effective production of tantalum anodes for electrolytic capacitors, which have a high and long-term stable wire bending strength.
- the present invention therefore relates to a method for producing an anode for electrolytic capacitors, the method comprising the following steps:
- such a sintered body may be an anode body.
- the liquid or gaseous oxidizing agent heals defects in the passive layer on the surface of the tantalum sintered body, thus preventing the formation of hydrogen embrittling the tantalum wire by splitting water (humidity). This manifests itself in a high, stable wire bending strength, even after storage of the sintered body or Anodes at high humidity over days or in the further processing of the sintered body or anodes to capacitors does not decrease significantly.
- the inventive method leads to the reduction of wire embrittlement or stabilization of the mechanical strength of the tantalum wires and can be tested by measuring the wire bending strength of tantalum sintered bodies or anodes.
- an apparatus according to the Japanese standard EIAJ RC-2361 A is used and tested the anodes with this accordingly.
- step a) of the method according to the invention a tantalum powder is pressed around a tantalum wire or a tantalum band or a tantalum sheet in order to form a compact.
- tantalum tapes have an average thickness of 0.01 mm to 1 mm, a maximum width of 20 mm and a length to width ratio of greater than 4: 1.
- Sheet metals usually have a length-to-width ratio of less than 4: 1 for the same thickness and any width. Tantalum powders of any charge class and with any specific surface area (determined by BET) can generally be used for this purpose. However, tantalum powder with a specific surface area greater than 1 m 2 / g, corresponding to a charge of capacitor anodes greater than 50,000 ⁇ V / g, particularly preferred with a specific surface area determined according to ASTM D 3663 greater than 2 m 2 / g, is preferred for the process according to the invention Charge of capacitor anodes produced therefrom greater than 100,000 ⁇ V / g, in particular preferably with a specific surface area determined according to ASTM D 3663 greater than 3 m 2 / g corresponding to a charge of capacitor anodes produced therefrom greater than 150,000 ⁇ V / g and very particularly preferably with one according to ASTM D 3663 determined specific surface area greater than 4 m 2 / g corresponding to a charge of capacitor anodes produced therefrom
- the tantalum powders may consist of particles or of agglomerates of primary particles, which may have any desired shape, such as flaky, angular, spherical, bulbous or mixtures or modifications thereof.
- the size of the agglomerates (determined by sieve analysis) is usually less than 1000 ⁇ , preferably less than 500 ⁇ , more preferably less than 300 ⁇ and most preferably less than 200 ⁇ .
- the size (weight-average diameter) of the primary particles is usually between 10 ⁇ and 0.01 ⁇ , preferably between 5 ⁇ and 0.01 ⁇ , more preferably between 1 ⁇ and 0.01 ⁇ , most preferably between 0.5 ⁇ and 0.01 ⁇ .
- Tantalum powders of any bulk density can be used, but preferred are those between 0.1 and 10.0 g / cm 3 , more preferably between 0.5 and 5.0 g / cm 3 , particularly preferably between 1 .0 and 3.0 g / cm 3 .
- the powders may be mixed with a pressing aid to ensure that the particles adhere sufficiently to one another when pressed around the wire or strip or sheet to make the compact.
- Suitable pressing aids are, for example, camphor, polyethylene glycols (e.g., Carbowax TM), polyesters (e.g., Glyptal TM), stearic and other soapy fatty acids, polyvinyl alcohols, or vegetable and microwaxes (purified paraffins).
- the pressing aid may be dissolved in a solvent to achieve a better distribution in the powder. Examples of solvents are water, alcohols, ethers and others. Usual concentrations of the pressing aids are in the range of 0.1 to 10 wt .-%, preferably in the range of 0.1 to 5 wt .-%. However, the use of pressing aids is not mandatory for the present invention.
- the wire or strip or sheet used in the process of the present invention may consist of pure tantalum metal or may comprise essentially tantalum, but may also comprise dopants of one or more of the elements, for example selected from the group consisting of Si, Y, C, Rh, Pd , Pt, W, Nb, Mo, La, Ce, Nd, Th or others.
- the tantalum wire or the tantalum band or the tantalum sheet comprises at least 95% by weight, more preferably at least 96% by weight, in particular at least 97% by weight and especially at least 99% by weight tantalum, the weight data being based on Total weight of wire or tape or sheet. Tantalum wires of any diameter can be used. However, preference is given to those having an arithmetically averaged diameter ⁇ 0.5 mm, preferably ⁇ 0.3 mm and in particular ⁇ 0.2 mm.
- the tantalum wire has an arithmetic mean diameter of 0.08 mm to 0.5 mm, preferably 0.1 to 0.3 mm, and in particular 0.12 to 0.2 mm.
- the pressing aids can be removed by heating the compact in vacuum for several minutes to hours to temperatures in the range of 100-500 ° C. Alternatively, the pressing aids can be removed by washing with aqueous solutions, as described for example in US 5,470,525.
- step b) of the process according to the invention the compacts produced in step a) are sintered.
- porous sintered bodies can be obtained.
- the temperature during the sintering is preferably in the range from 1000 to 2000 ° C., more preferably in the range from 1100 to 1600 ° C. and more preferably in the range from 1200 to 1400 ° C.
- the sintering is preferably carried out in a high vacuum (pressure less than 10 3 mbar), but may alternatively be carried out under noble gases such as helium or argon.
- the holding time (time at T max ) during sintering is in the range of one minute to one hour.
- the sintered body shrinks by up to 25% by volume as bonds between the particles grow and grain growth occurs.
- step a) and b) of the process according to the invention are chosen such that the resulting sintered bodies have a porosity determined by mercury porosimetry of between 20-70%, preferably between 30-60% and more preferably between 40 - 60%.
- step c) of the process according to the invention sintered bodies obtained by sintering in step b) are cooled.
- the cooling is preferably carried out under reduced pressure and / or in the presence of a protective gas atmosphere.
- the protective gases used are preferably argon and / or helium.
- the cooling is carried out under reduced pressure, preferably a pressure below 1 mbar, more preferably below 10 ⁇ 4 bar, more preferably below 10 ⁇ 5 bar, in particular below 10 ⁇ 6 bar apply.
- the cooling is usually carried out to ambient temperature, ie about 15 to 30 ° C, for example 25 ° C. However, the cooling can also take place up to the temperature range which is selected for the subsequent treatment of the porous sintered body with the oxidizing agent in step d) of the process according to the invention.
- the treatment is carried out with an oxidizing agent.
- the oxidizing agent used in step d) of the process according to the invention is liquid or gaseous.
- the oxidizing agent must advantageously be able to supply atomic oxygen in sufficient quantity, but on the other hand it must not contaminate the tantalum sintered bodies, ie the cleavage products must not react with the tantalum and must be easy to remove, since these otherwise in which anodic oxidation could be incorporated into the dielectric layer and could have a negative impact on the leakage current of the capacitor.
- Suitable oxidants are in principle and preferably dry oxygen, ozone, peroxides, perborates, percarbonates, periodates, permanganates, peracids such as periodic acid or peroxodisulfuric in question.
- hydrogen peroxide solutions, oxygen and ozone are to be regarded as particularly advantageous, with hydrogen peroxide and in particular their aqueous solutions being preferred on account of the easier handling / processability or for cost reasons.
- the treatment of the sintered bodies in step d) is advantageously carried out at a suitable temperature and for a sufficient time.
- the temperature may be in the range from 0 ° C to 300 ° C, preferably from 10 to 200 ° C, and more preferably in the range from 20 ° C to 100 ° C.
- the treatment time can range from a few minutes to many days, preferred are treatment times of 1 minute to 1000 hours, more preferably from 0.1 hours to 500 hours, particularly preferably from 0.5 hours to 100 hours, and most preferably from 1 h to 24 h.
- dry oxygen as the oxidizing agent, it was found that the application can advantageously be carried out at temperatures greater than 60 ° C., in particular from 70 ° C. to 200 ° C., whereby a long-lasting effect can be achieved.
- the treatment for example with an aqueous hydrogen peroxide solution, is preferably carried out for at least one hour.
- the treatment by any known technique such as dipping, printing, spraying, powder coating, inter alia, is preferred, the dipping.
- concentration of oxidizing agent in the solutions, comprising solvents and oxidizing agents preferably in a range from 0.001 M to 15 M, more preferably in the range of 0.001 M to 8 M, very particularly preferably in the range of 0.01 M to 5 M and most preferably in a range of 0.01 M to 2 M.
- the oxidizing agent is in the form of an aqueous hydrogen peroxide solution, preferably in a concentration of 0.1 to 50 wt .-%, preferably from 1 to 30 wt .-%, particularly preferably from 1 to 10 wt .-% and more preferably from 1 to 5 wt .-% hydrogen peroxide, wherein the weights are based on the total weight of the aqueous hydrogen peroxide solution.
- Preferred solvents are those which, on the one hand, can dissolve the desired concentration of oxidizing agent without decomposition and, on the other hand, do not themselves react with the tantalum sintered bodies or tantalum bodies.
- Suitable solvents are e.g. Water, alcohols, ethers, triglycerides, ketones, esters, amides, nitriles and the like are preferred, aqueous solutions.
- the tantalum sintered bodies After treating the tantalum sintered bodies with the oxidizing agent, they may optionally be treated with solvents, e.g. Water or alcohols, for example, methanol, ethanol or propanol, washed to remove residues of the ingredients. Thereafter, they may optionally be dried, preferably at temperatures between 50-200 ° C.
- solvents e.g. Water or alcohols, for example, methanol, ethanol or propanol
- the sintered bodies treated in step d) are oxidized anodically.
- the sintered bodies are anodically oxidized by immersion in an aqueous or nonaqueous electrolyte.
- the electrolyte is electrically conductive and can have a conductivity of 1-100 mS / cm, preferably 1-50 mS / cm and very particularly preferably 1-30 mS / cm, each measured at 25 ° C.
- electrolytes typically inorganic (eg HCl, H 3 P0 4 , HN0 3 , H 2 S0 4 , H 3 B0 3 etc.) or organic acids (eg acetic acid, malonic acid, maleic acid, succinic acid, etc.) but also others are used.
- one or more of the abovementioned oxidizing agents in the abovementioned concentrations are added to the electrolyte.
- an aqueous solution of hydrogen peroxide is also preferred here.
- one or more oxidants are added to the electrolyte in step e.), So step d.) May optionally be omitted.
- the electrolyte preferably contains hydrogen peroxide.
- Another object of the present invention is an anode or an anode body, which is obtainable according to the inventive method.
- Another object of the present invention is an anode suitable for use as tantalum electrolytic capacitors, wherein the anode contains an embedded and sintered tantalum metal wire, wherein the quotient Df / Ds, formed from the Drahtversprödungskohl measured after formation (anodic oxidation) of the sintered body (Df ) and the wire embrittlement number measured immediately after sintering and cooling to 20 ⁇ (Ds) of the compact, is between 0.2 and 1, and the wire embrittlement number was respectively measured according to Japanese Standard EIAJ RC-2361A.
- Df is the wire embrittlement number measured after 3 hours of anodic oxidation of the sintered body, which were anodized by immersion in a heated to 85 'te dilute phosphoric acid solution with a conductivity of 4300 ⁇ and at a current limited to 150 mA current up to a voltage of 20 volts. After dropping the current, the voltage is maintained for 3 h.
- Ds is the wire embrittlement number measured immediately, but no later than 15 minutes after the sintering of the compact and cooling to room temperature (20 ° C).
- the quotient Df / Ds is ideally between 0.2 and 1, preferably between 0.4 and 1.
- the anodes according to the invention preferably have a wire which has an arithmetically averaged diameter of ⁇ 0.5 mm, preferably of ⁇ 0.3 mm and in particular of ⁇ 0.2 mm.
- the anodes according to the invention comprise a wire having an arithmetic mean diameter of 0.08 mm to 0.5 mm, preferably 0.1 to 0.3 mm, and in particular 0.12 to 0.2 mm ,
- the tantalum wire or tantalum sheet or tantalum sheet of the anodes of the invention comprises at least 95% by weight, more preferably at least 96% by weight, especially preferably at least 98% by weight of tantalum, indicating weight on the total weight of the wire, ribbon or of the sheet metal.
- the anodes have a density of 3.5-9.0 g / cm 3 , preferably from 4.0 to 8.0 g / cm 3 and in particular 4.5 to 6.5 g / cm 3 .
- the size of the tantalum anodes for which the described method can be used is not limited. However, it is preferably in the range of less than 10 cm 3 , more preferably in the range of less than 5 cm 3 , particularly preferably in the range of less than 1 cm 3 .
- the shape of the tantalum anode is typically cuboid, but may also have other shapes such as drop-shaped, cylindrical or arcuate.
- the anode may also have a grooved surface, for example to increase the surface area to volume ratio and thereby lower the ESR.
- the tantalum anodes according to the invention are outstandingly suitable for the preparation of electrolytic capacitors in a very high yield.
- These electrolytic capacitors according to the invention can be used as a component in electronic circuits, for example as a smoothing capacitor (filter capacitor) or as a decoupling capacitor.
- Another object of the present invention is therefore the use of the anode according to the invention as a component in electronic circuits, in particular as a smoothing capacitor or interference suppression capacitor.
- the anodes according to the invention are used for the production of electrolytic capacitors.
- a further subject of the present invention is therefore an electrolytic capacitor comprising an anode according to the invention.
- a further subject of the present invention is an electronic circuit comprising an electrolytic capacitor according to the invention.
- Example 1 35 mg of a tantalum powder having a specific surface area of 3.5 m 2 / g determined according to ASTM D 3663 are pressed into a pressed body having a density of 6.5 g / cm 3 around a tantalum wire.
- the compact is cuboid with the dimensions 2.1 mm x 1, 6 mm x 1, 6 mm.
- the mean diameter of the tantalum wire is 0.19 mm.
- the compacts are sintered for 20 minutes under high vacuum at 1315 ° C and then cooled in the oven to room temperature (25 ' ⁇ ) under helium (sample 1).
- the sintered bodies are immediately, at the latest 15 minutes after sintering, then stored for 1 h in a 5% by weight aqueous solution of hydrogen peroxide and then washed with water and dried at ⁇ ⁇ ' ⁇ . After treatment with hydrogen peroxide, a portion of the sintered bodies are stored in dilute phosphoric acid heated to 85 ° with a conductivity of 4300 ⁇ 5 for 4 hours (sample 3) and 24 hours (sample 4). Another part of the sintered bodies is stored for 24 h in a climatic chamber at 20 ⁇ and 50% relative humidity (sample 2).
- the sintered bodies from the climatic chamber are then immersed in a heated to 85 'te diluted dilute phosphoric acid solution with a conductivity of 4300 ⁇ and anodized at a current limited to 150 mA current to a voltage of 20 V anodically. After decreasing the current, the voltage is maintained for 3 h, after which the wire embrittlement number is measured after 1 h (sample 5) and 3 h (sample 6).
- the wire embrittlement number was determined on several different samples
- Example 8 According to the procedure as in Example 1, however, the sintered bodies are treated after sintering with dried oxygen for one hour. This treatment takes place at 90 ° C. In addition, the treatment with hydrogen peroxide is omitted.
- Example 8
- the sintered bodies are treated after sintering with dried oxygen for one hour. This treatment takes place at 90 ° C. In addition, the treatment with hydrogen peroxide is omitted.
- the sintered bodies are not stored in the climate chamber before the anodic oxidation, but are immediately oxidized anodically within 5 h after sintering.
- Example 2 According to the procedure as in Example 1 but with a density of the compact of 5.5 g / cm 3 .
- Example 14 (Comparative Example 3):
- Example 15 (Comparative Example 4):
- Example 7 According to the procedure as in Example 7 but with a density of the compact of 5.5 g / cm 3 .
- Example 8 According to the procedure as in Example 8 but with a density of the compact of 5.5 g / cm 3 .
- Example 10 According to the procedure as in Example 10 but with a density of the compact of 5.5 g / cm 3 .
- Df is the wire embrittlement number measured after 3 hours of anodic oxidation of the sintered body, which by immersion in a heated to 85 'te dilute phosphoric acid solution with a conductivity of 4300 ⁇ and at 150 mA limited amperage were oxidized to a voltage of 20 V anodic. After dropping the current, the voltage is maintained for 3 h.
- Ds is the wire embrittlement number measured immediately, but no later than 15 minutes after the sintering of the compact and cooling to room temperature (20 ° C).
- the wire embrittlement number was determined according to the Japanese standard EIAJ RC-2361 A as follows:
- Rotary axis is located.
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- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
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Abstract
Description
Claims
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/237,562 US9378894B2 (en) | 2011-08-09 | 2012-08-08 | Method for producing electrolytic capacitors from valve metal powders |
JP2014524374A JP2014522124A (ja) | 2011-08-09 | 2012-08-08 | 弁金属粉末から電解コンデンサを製造する方法 |
EP12748005.1A EP2741877A1 (de) | 2011-08-09 | 2012-08-08 | Verfahren zur herstellung von elektrolytkondensatoren aus ventilmetallpulvern |
CN201280038687.7A CN103717329A (zh) | 2011-08-09 | 2012-08-08 | 由阀金属粉末制造电解电容器的方法 |
RU2014108710A RU2615415C2 (ru) | 2011-08-09 | 2012-08-08 | Способ получения электролитических конденсаторов из порошков вентильных металлов |
MX2014001185A MX2014001185A (es) | 2011-08-09 | 2012-08-08 | Proceso para producir capacitores electroliticos a partir de polvos de metales para valvulas. |
KR1020147003993A KR20140054074A (ko) | 2011-08-09 | 2012-08-08 | 밸브 금속 분말로 전해질 커패시터를 제조하기 위한 방법 |
IL230709A IL230709A (en) | 2011-08-09 | 2014-01-29 | Method for manufacturing electrolytic capacitors from metal powders |
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DE102011109756.6 | 2011-08-09 | ||
DE102011109756A DE102011109756A1 (de) | 2011-08-09 | 2011-08-09 | Verfahren zur Herstellung von Elektrolytkondensatoren aus Ventilmetallpulvern |
US201161522407P | 2011-08-11 | 2011-08-11 | |
US61/522,407 | 2011-08-11 |
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WO2013021004A1 true WO2013021004A1 (de) | 2013-02-14 |
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PCT/EP2012/065518 WO2013021004A1 (de) | 2011-08-09 | 2012-08-08 | Verfahren zur herstellung von elektrolytkondensatoren aus ventilmetallpulvern |
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US (1) | US9378894B2 (de) |
EP (1) | EP2741877A1 (de) |
JP (1) | JP2014522124A (de) |
KR (1) | KR20140054074A (de) |
CN (1) | CN103717329A (de) |
DE (1) | DE102011109756A1 (de) |
IL (1) | IL230709A (de) |
MX (1) | MX2014001185A (de) |
RU (1) | RU2615415C2 (de) |
TW (1) | TWI592962B (de) |
WO (1) | WO2013021004A1 (de) |
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MX2017006590A (es) * | 2014-11-21 | 2018-01-26 | Plansee Se | Dispositivo de carga. |
EP3570999A4 (de) * | 2017-01-17 | 2020-06-17 | Kemet Electronics Corporation | Verbesserter draht zur anodenverbindung |
US20190287730A1 (en) * | 2018-03-15 | 2019-09-19 | Kemet Electronics Corporation | Method to Reduce Anode Lead Wire Embrittlement in Capacitors |
KR20190121213A (ko) * | 2018-10-24 | 2019-10-25 | 삼성전기주식회사 | 세라믹 전자 부품 |
US20220080502A1 (en) * | 2020-09-14 | 2022-03-17 | Kemet Electronics Corporation | Freeze Drying and Tumble Drying of Flake Powder |
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- 2012-08-08 TW TW101128528A patent/TWI592962B/zh not_active IP Right Cessation
- 2012-08-08 JP JP2014524374A patent/JP2014522124A/ja active Pending
- 2012-08-08 US US14/237,562 patent/US9378894B2/en not_active Expired - Fee Related
- 2012-08-08 CN CN201280038687.7A patent/CN103717329A/zh active Pending
- 2012-08-08 EP EP12748005.1A patent/EP2741877A1/de not_active Withdrawn
- 2012-08-08 MX MX2014001185A patent/MX2014001185A/es unknown
- 2012-08-08 KR KR1020147003993A patent/KR20140054074A/ko not_active Application Discontinuation
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Also Published As
Publication number | Publication date |
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IL230709A (en) | 2017-02-28 |
IL230709A0 (en) | 2014-03-31 |
EP2741877A1 (de) | 2014-06-18 |
TW201330035A (zh) | 2013-07-16 |
MX2014001185A (es) | 2014-05-30 |
DE102011109756A1 (de) | 2013-02-14 |
KR20140054074A (ko) | 2014-05-08 |
TWI592962B (zh) | 2017-07-21 |
RU2615415C2 (ru) | 2017-04-04 |
US9378894B2 (en) | 2016-06-28 |
CN103717329A (zh) | 2014-04-09 |
JP2014522124A (ja) | 2014-08-28 |
US20140185190A1 (en) | 2014-07-03 |
RU2014108710A (ru) | 2015-09-20 |
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