WO1997004476A3 - Procede et appareil pour l'attaque et elimination du revetement d'un semi-conducteur - Google Patents

Procede et appareil pour l'attaque et elimination du revetement d'un semi-conducteur Download PDF

Info

Publication number
WO1997004476A3
WO1997004476A3 PCT/US1996/011865 US9611865W WO9704476A3 WO 1997004476 A3 WO1997004476 A3 WO 1997004476A3 US 9611865 W US9611865 W US 9611865W WO 9704476 A3 WO9704476 A3 WO 9704476A3
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
etching
stripping
processing
plasma
Prior art date
Application number
PCT/US1996/011865
Other languages
English (en)
Other versions
WO1997004476A2 (fr
Inventor
Richard L Bersin
Original Assignee
Ulvac Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Technologies Inc filed Critical Ulvac Technologies Inc
Publication of WO1997004476A2 publication Critical patent/WO1997004476A2/fr
Publication of WO1997004476A3 publication Critical patent/WO1997004476A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching

Abstract

L'appareil pour attaquer et éliminer le résist d'une tranche de semi-conducteur comprend, une source hyperfréquence utilisée pour créer un plasma, à partir duquel un gaz à forte concentration de radicaux libres est libéré, et une source RF utilisée pour créer un plasma du gaz libéré afin de produire des taux élevés d'incinération. La tranche est placée au-dessus d'une plaque chauffante et peut être déplacée et positionnée dans un grand nombre de positions de traitement au cours du procédé d'attaque ou d'élimination. Le déplacement de la tranche permet de réguler l'énergie; l'anisotropie des parois formées durant l'attaque; le traitement avec ou sans chauffage de la tranche; le traitement alterné à haute et basse températures; et l'attaque ou l'élimination du résist simultanément sur les deux côtés de la tranche.
PCT/US1996/011865 1995-07-18 1996-07-18 Procede et appareil pour l'attaque et elimination du revetement d'un semi-conducteur WO1997004476A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US50373295A 1995-07-18 1995-07-18
US08/503,732 1995-07-18

Publications (2)

Publication Number Publication Date
WO1997004476A2 WO1997004476A2 (fr) 1997-02-06
WO1997004476A3 true WO1997004476A3 (fr) 1997-03-06

Family

ID=24003288

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1996/011865 WO1997004476A2 (fr) 1995-07-18 1996-07-18 Procede et appareil pour l'attaque et elimination du revetement d'un semi-conducteur

Country Status (2)

Country Link
JP (1) JPH0936103A (fr)
WO (1) WO1997004476A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5795831A (en) * 1996-10-16 1998-08-18 Ulvac Technologies, Inc. Cold processes for cleaning and stripping photoresist from surfaces of semiconductor wafers
US5968374A (en) * 1997-03-20 1999-10-19 Lam Research Corporation Methods and apparatus for controlled partial ashing in a variable-gap plasma processing chamber
JP3318241B2 (ja) * 1997-09-19 2002-08-26 富士通株式会社 アッシング方法
US6451158B1 (en) * 1999-12-21 2002-09-17 Lam Research Corporation Apparatus for detecting the endpoint of a photoresist stripping process
US6362110B1 (en) * 2000-03-30 2002-03-26 Lam Research Corporation Enhanced resist strip in a dielectric etcher using downstream plasma
JP3770790B2 (ja) * 2000-11-15 2006-04-26 シャープ株式会社 アッシング方法
WO2007067086A1 (fr) * 2005-12-08 2007-06-14 Georgiy Yakovlevitch Pavlov Dispositif de traitement par plasma
JP6948181B2 (ja) * 2017-08-01 2021-10-13 東京エレクトロン株式会社 多層膜をエッチングする方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4581100A (en) * 1984-10-29 1986-04-08 International Business Machines Corporation Mixed excitation plasma etching system
US4673456A (en) * 1985-09-17 1987-06-16 Machine Technology, Inc. Microwave apparatus for generating plasma afterglows
US5226056A (en) * 1989-01-10 1993-07-06 Nihon Shinku Gijutsu Kabushiki Kaisha Plasma ashing method and apparatus therefor
US5228052A (en) * 1991-09-11 1993-07-13 Nihon Shinku Gijutsu Kabushiki Kaisha Plasma ashing apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4581100A (en) * 1984-10-29 1986-04-08 International Business Machines Corporation Mixed excitation plasma etching system
US4673456A (en) * 1985-09-17 1987-06-16 Machine Technology, Inc. Microwave apparatus for generating plasma afterglows
US5226056A (en) * 1989-01-10 1993-07-06 Nihon Shinku Gijutsu Kabushiki Kaisha Plasma ashing method and apparatus therefor
US5228052A (en) * 1991-09-11 1993-07-13 Nihon Shinku Gijutsu Kabushiki Kaisha Plasma ashing apparatus

Also Published As

Publication number Publication date
WO1997004476A2 (fr) 1997-02-06
JPH0936103A (ja) 1997-02-07

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