JPH0936103A - 半導体ウェハのエッチング及びレジスト除去のための方法並びに装置 - Google Patents
半導体ウェハのエッチング及びレジスト除去のための方法並びに装置Info
- Publication number
- JPH0936103A JPH0936103A JP18737296A JP18737296A JPH0936103A JP H0936103 A JPH0936103 A JP H0936103A JP 18737296 A JP18737296 A JP 18737296A JP 18737296 A JP18737296 A JP 18737296A JP H0936103 A JPH0936103 A JP H0936103A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- wafer
- plasma
- processing
- microwave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 58
- 238000005530 etching Methods 0.000 title claims abstract description 37
- 239000004065 semiconductor Substances 0.000 title claims description 44
- 239000007789 gas Substances 0.000 claims abstract description 66
- 150000002500 ions Chemical class 0.000 claims abstract description 24
- 238000004380 ashing Methods 0.000 claims abstract description 20
- 238000012545 processing Methods 0.000 claims description 67
- 239000000758 substrate Substances 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 229910052731 fluorine Inorganic materials 0.000 claims description 10
- 239000011737 fluorine Substances 0.000 claims description 10
- 230000007246 mechanism Effects 0.000 claims description 8
- 230000005684 electric field Effects 0.000 claims description 7
- 238000003672 processing method Methods 0.000 claims description 2
- 238000011282 treatment Methods 0.000 abstract description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 3
- 230000001965 increasing effect Effects 0.000 abstract description 3
- 150000003254 radicals Chemical class 0.000 abstract 4
- 235000012431 wafers Nutrition 0.000 description 78
- 230000008569 process Effects 0.000 description 20
- 238000001020 plasma etching Methods 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- -1 fluorine ions Chemical class 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000009469 supplementation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32963—End-point detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US50373295A | 1995-07-18 | 1995-07-18 | |
| US08/503,732 | 1995-07-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0936103A true JPH0936103A (ja) | 1997-02-07 |
Family
ID=24003288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18737296A Pending JPH0936103A (ja) | 1995-07-18 | 1996-07-17 | 半導体ウェハのエッチング及びレジスト除去のための方法並びに装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH0936103A (fr) |
| WO (1) | WO1997004476A2 (fr) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003518740A (ja) * | 1999-12-21 | 2003-06-10 | ラム リサーチ コーポレーション | フォトレジスト剥離プロセスの終点を検出するための方法および装置 |
| KR100441457B1 (ko) * | 2000-11-15 | 2004-07-23 | 샤프 가부시키가이샤 | 애싱 방법 |
| KR100787019B1 (ko) * | 2000-03-30 | 2007-12-18 | 램 리써치 코포레이션 | 하향 플라즈마를 이용한 유전체 에칭의 향상된 레지스트스트립 |
| JP2019029561A (ja) * | 2017-08-01 | 2019-02-21 | 東京エレクトロン株式会社 | 多層膜をエッチングする方法 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5795831A (en) * | 1996-10-16 | 1998-08-18 | Ulvac Technologies, Inc. | Cold processes for cleaning and stripping photoresist from surfaces of semiconductor wafers |
| US5968374A (en) * | 1997-03-20 | 1999-10-19 | Lam Research Corporation | Methods and apparatus for controlled partial ashing in a variable-gap plasma processing chamber |
| JP3318241B2 (ja) * | 1997-09-19 | 2002-08-26 | 富士通株式会社 | アッシング方法 |
| WO2007067086A1 (fr) * | 2005-12-08 | 2007-06-14 | Georgiy Yakovlevitch Pavlov | Dispositif de traitement par plasma |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4581100A (en) * | 1984-10-29 | 1986-04-08 | International Business Machines Corporation | Mixed excitation plasma etching system |
| US4673456A (en) * | 1985-09-17 | 1987-06-16 | Machine Technology, Inc. | Microwave apparatus for generating plasma afterglows |
| US5226056A (en) * | 1989-01-10 | 1993-07-06 | Nihon Shinku Gijutsu Kabushiki Kaisha | Plasma ashing method and apparatus therefor |
| US5228052A (en) * | 1991-09-11 | 1993-07-13 | Nihon Shinku Gijutsu Kabushiki Kaisha | Plasma ashing apparatus |
-
1996
- 1996-07-17 JP JP18737296A patent/JPH0936103A/ja active Pending
- 1996-07-18 WO PCT/US1996/011865 patent/WO1997004476A2/fr active Application Filing
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003518740A (ja) * | 1999-12-21 | 2003-06-10 | ラム リサーチ コーポレーション | フォトレジスト剥離プロセスの終点を検出するための方法および装置 |
| JP4763955B2 (ja) * | 1999-12-21 | 2011-08-31 | ラム リサーチ コーポレーション | フォトレジスト剥離プロセスの終点を検出するための方法および装置 |
| KR100787019B1 (ko) * | 2000-03-30 | 2007-12-18 | 램 리써치 코포레이션 | 하향 플라즈마를 이용한 유전체 에칭의 향상된 레지스트스트립 |
| KR100441457B1 (ko) * | 2000-11-15 | 2004-07-23 | 샤프 가부시키가이샤 | 애싱 방법 |
| JP2019029561A (ja) * | 2017-08-01 | 2019-02-21 | 東京エレクトロン株式会社 | 多層膜をエッチングする方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1997004476A2 (fr) | 1997-02-06 |
| WO1997004476A3 (fr) | 1997-03-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5707485A (en) | Method and apparatus for facilitating removal of material from the backside of wafers via a plasma etch | |
| US8337713B2 (en) | Methods for RF pulsing of a narrow gap capacitively coupled reactor | |
| US5662770A (en) | Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks | |
| KR101164829B1 (ko) | 일 세트의 플라즈마 처리 단계를 튜닝하는 방법 및 장치 | |
| JP2816374B2 (ja) | シャンパン輪郭の乾式食刻方法及び乾式食刻装置 | |
| JP4871444B2 (ja) | 酸化膜除去法及び酸化膜除去のための半導体製造装置 | |
| JP4907827B2 (ja) | ポリシリコンのエッチングの均一性を向上し、エッチング速度の変動を低減するための方法 | |
| JPH05121386A (ja) | 基板表面のプラズマ洗浄方法とウエハのフオトレジスト・プラズマ洗浄方法と基板表面の洗浄装置 | |
| JPH0336300B2 (fr) | ||
| US20120108072A1 (en) | Showerhead configurations for plasma reactors | |
| JP2005236138A (ja) | プラズマ処理装置及びその制御方法 | |
| JPH0936103A (ja) | 半導体ウェハのエッチング及びレジスト除去のための方法並びに装置 | |
| JPH10125662A (ja) | エッチングプロセス中に側壁プロファイルを制御するための方法および装置 | |
| US20230335409A1 (en) | Substrate processing method and substrate processing apparatus | |
| WO2000041228A1 (fr) | Procede de traitement au plasma | |
| KR100476903B1 (ko) | 중성입자 변환 효율이 향상된 중성입자 처리 장치 | |
| KR100603099B1 (ko) | 플라즈마 처리 방법 및 장치 | |
| JPH0831441B2 (ja) | 表面処理方法 | |
| JPH10135182A (ja) | レジスト除去方法及びレジスト除去装置 | |
| JP3042208B2 (ja) | マイクロ波プラズマ処理装置 | |
| TWI797525B (zh) | 半導體裝置的製造方法 | |
| JP2002083798A (ja) | 表面処理方法 | |
| JPH05347282A (ja) | アッシング装置及びその処理方法 | |
| JPH05166762A (ja) | エッチング方法 | |
| JPH0794482A (ja) | ドライエッチング方法 |