WO1995020253A2 - Using lasers to fabricate coatings on substrates - Google Patents
Using lasers to fabricate coatings on substrates Download PDFInfo
- Publication number
- WO1995020253A2 WO1995020253A2 PCT/US1995/000782 US9500782W WO9520253A2 WO 1995020253 A2 WO1995020253 A2 WO 1995020253A2 US 9500782 W US9500782 W US 9500782W WO 9520253 A2 WO9520253 A2 WO 9520253A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- coating
- laser
- diamond
- fabricated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4418—Methods for making free-standing articles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Definitions
- the process includes forming a layer of opaque non-diamond material between the two diamond surfaces to be joined, pressing the diamond surfaces together, using the pulsed laser light to quickly melt all the opaque nondiamond carbon material before a significant amount of heat is lost through the diamond surface, then allowing the resulting carbon melt to cool and solidify as polycrystalline diamond which grows homoepitaxially from the diamond surfaces, bonding those surfaces together.
- ASSISTED DEPOSITION AND ANNEALING discloses using a Q-switched Nd:YAG laser, splitting its output beam, directing a first output beam to a source (target) of material to evaporate the material, and directing the second output beam to the substrate.
- the evaporated target material forms a film on the substrate.
- the substrate is placed at a location to avoid “splashing" (eruptions of hot solid particles or liquid droplets from the target) from the target, and the second output beam is used to anneal the deposited (on the substrate) film (of condensed material) .
- the process is especially useful for advanced electronic device applications, especially for incorporating films into silicon integrated circuit structures.
- Figures 16F is a side view, respectively, of a round tool being surface treated, according to another embodiment of the present inventio .
- the secondary element(s) be directed towards the same area (430) of the substrate whereat the laser beams are directed, but it is also possible to introduce the secondary source at another selected area on the substrate, or to simply "flood" the substrate (i.e., the entire surface of the substrate) with the secondary element(s) .
- a coating may be fabricated on the surface of the substrate, for example, as described with respect to Step E in the process flow diagram of Figure l.
- Figure 5 illustrates an embodiment of a nozzle 500 suitable for introducing a gaseous secondary element (from a secondary source) to the reaction system.
- the nozzle 500 is suitable for introducing three distinct gases - a gaseous secondary element (SS) , a shielding gas (SG) and a "buffer" gas (BG) .
- SS gaseous secondary element
- SG shielding gas
- BG buffer gas
- the nitrogen (shielding) gas is also turned on to convey ablated material (cobalt, oxides) away from the substrate.
- the nitrogen is left on for a brief interval (from “pi” to "p2") after the excimer laser is turned off to ensure that the ablated material is completely removed from the surface of the substrate.
- the surface treatment technique may be performed, combining pre-treatment and coating fabrication, as illustrated by Figure 10A. Therein, at a time “to” the surface treatment commences. During the entire surface treatment process, extending from time “tO" to time “t5", the excimer laser (e.g., 712), the secondary source (e.g., 720) and the shielding gas (e.g., 724) are turned on.
- the excimer laser e.g., 712
- the secondary source e.g., 720
- the shielding gas e.g., 724
- the Nd:YAG laser is on for at least a portion (e.g., "tl” to "t3", see Figure 10A) of the process.
- the Nd:YAG laser is turned on 5 seconds after the excimer laser is turned on, for 35 seconds, pulsed at a frequency of 120 Hz, at 1000 watts, to (i) assist the excimer laser in breaking the bonds in the secondary source (C0 2 ) , and to perform a primary (or sole) role in diffusion bonding.
- the surface treatment process is also suitable, for example, for an "off-the-shelf" Kennametal (Latrobe, PA) "K313" grade cutting tool insert, having 93.5% WC, 0.5% Cr 3 C 2 , and 6% Co, an average grain size of 1 ⁇ m (micron) , a transverse rupture strength of 3000 N/mm 2 (Newtons per millimeter squared) , a density of 14.9 g/cm 3 (grams per centimeter cubed), and an HRA hardness of 93.0.
- the excimer laser is operated with an output power of 100 W (Watts) , with a pulse duration of 400 ms (milliseconds) , in conjunction with the Nd: YAG laser operating according to PROGRAM NUMBER 4 on the table of Figure 10C and the C0 2 laser operating according to the profile of Figure 10D;
- the excimer laser may also be operated with an output power of 87.5 W (Watts) , with a pulse duration of 350 ms (milliseconds) , in conjunction with the Nd: YAG laser operating according to PROGRAM NUMBER 11 on the table of Figure IOC and the C0 2 laser operating according to the profile of Figure 10D; and
- Figure HA is a top view photomicrograph of the specimen (Prior Art) prior to surface treatment.
- an off-the-shelf cutting tool insert will exhibit a pattern of grinding marks (evident as oblique lines in the figure) and may also have contaminants on the surface (evident as specks in the figure) .
- pre ⁇ treatment it is preferable to perform pre ⁇ treatment to characterize the surface of the substrate prior to coating, in addition to ablating cobalt and exposing tungsten carbide grains.
- Figure HA although related to Figure 6A, shows in greater detail some of the challenges inherent in surface treating existing substrates.
- the technique of the present invention is useful for fabricating a variety of coatings on a variety of substrates.
- the substrate can be viewed as a countertop, upon which any number of useful objects can be placed. (Of course, these objects will be diffusion bonded to the countertop using the techniques of the present invention.)
- a flat planar cutting tool insert could be coated to not only have a diamond coating, but so that the diamond coating is tailored to have its own chip- breaking geometry (structure) .
- Figure 131 illustrates, generally, the truly heteroepitaxial nature of the invention.
- the fabrication of coatings is commenced on one or more (one shown) selected areas of the surface of a substrate 1390.
- the substrate may be a "sacrificial" substrate, which can be excised from the resulting built up (fabricated) coating structure(s) .
- An exemplary coating structure 1392 is shown as being fabricated (built-up) from a selected area of the surface of the substrate 1390. This can be considered to be growth in a z- axis (normal to the surface of the substrate) .
- any outline or area coating structure can be fabricated, and control over the fabrication is suitably effected simply by taking appropriate cross-sections from a computer-generated representation of the object sought to be fabricated as a growth structure, for example.
- a three-dimensional structure of unconstrained shape or form can be fabricated on a substrate.
- the substrate may be cut off and discarded, or dissolved away, or removed by any means including mechanical or chemical means.
- Figure 16B shows an alternate embodiment 1620 of a technique for fabricating a coating on a round tool.
- an exemplary end mill 1622 (similar to the end mill 1602) is disposed on its side, with the nozzle and lasers coming from above (not shown) .
- a plasma 1630 is formed at the tip of the end mill, and is walked along the length of the fluted portion in a manner similar to what has been described above (with respect to causing relative motion of a selected area on a larger substrate) .
- the end mill should be rotated in concert with walking the plasma along the fluted portion, to ensure uniform coverage (coating fabrication) along the length of the fluted portion.
- Substrates can be pre-treated to characterize their surfaces for further application of a coating, by any suitable technique.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Priority Applications (13)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/241,930 US5731046A (en) | 1994-01-18 | 1994-05-12 | Fabrication of diamond and diamond-like carbon coatings |
| PL95315582A PL177873B1 (pl) | 1994-01-18 | 1995-01-17 | Sposób obróbki powierzchni podłoża |
| CZ962112A CZ211296A3 (en) | 1994-01-18 | 1995-01-17 | Substrate surface treatment process |
| AU21147/95A AU2114795A (en) | 1994-01-18 | 1995-01-17 | Using lasers to fabricate diamond, diamond-like carbon, and other material coatings on substrates |
| CN95191718A CN1141602A (zh) | 1994-01-18 | 1995-01-17 | 利用激光在基体上制备金刚石、类金刚石碳以及其它材料的涂层 |
| BR9506560A BR9506560A (pt) | 1994-01-18 | 1995-01-17 | Processo de tratamento superficial de um substrato |
| PCT/US1995/000782 WO1995020253A2 (en) | 1994-01-18 | 1995-01-17 | Using lasers to fabricate coatings on substrates |
| MX9602821A MX9602821A (es) | 1994-01-18 | 1995-01-17 | Uso de laseres para fabricar revestimientos de diamante, carbono tipo diamante y otros revestimientos de materiales sobre substratos. |
| CA002181440A CA2181440A1 (en) | 1994-01-18 | 1995-01-17 | Using lasers to fabricate coatings on substrates |
| EP95913954A EP0739250A4 (en) | 1994-01-18 | 1995-01-17 | USE OF LASERS FOR THE PRODUCTION OF COATINGS ON SUBSTRATES |
| TW084107358A TW394800B (en) | 1995-01-17 | 1995-07-17 | Surface modification and/or fabrication techniques |
| IL11465795A IL114657A0 (en) | 1994-01-18 | 1995-07-18 | Surface modification and/or fabrication techniques |
| KR967003928A KR970700949A (enExample) | 1994-01-18 | 1996-07-18 |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/182,978 US5554415A (en) | 1994-01-18 | 1994-01-18 | Substrate coating techniques, including fabricating materials on a surface of a substrate |
| US08/182,978 | 1994-01-18 | ||
| US08/184,041 | 1994-01-21 | ||
| US08/184,041 US5620754A (en) | 1994-01-21 | 1994-01-21 | Method of treating and coating substrates |
| US08/241,930 | 1994-05-12 | ||
| US08/241,930 US5731046A (en) | 1994-01-18 | 1994-05-12 | Fabrication of diamond and diamond-like carbon coatings |
| PCT/US1995/000782 WO1995020253A2 (en) | 1994-01-18 | 1995-01-17 | Using lasers to fabricate coatings on substrates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO1995020253A2 true WO1995020253A2 (en) | 1995-07-27 |
| WO1995020253A3 WO1995020253A3 (en) | 1995-08-24 |
Family
ID=98692841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US1995/000782 Ceased WO1995020253A2 (en) | 1994-01-18 | 1995-01-17 | Using lasers to fabricate coatings on substrates |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US5731046A (enExample) |
| EP (1) | EP0739250A4 (enExample) |
| KR (1) | KR970700949A (enExample) |
| CN (1) | CN1141602A (enExample) |
| AU (1) | AU2114795A (enExample) |
| BR (1) | BR9506560A (enExample) |
| CA (1) | CA2181440A1 (enExample) |
| CZ (1) | CZ211296A3 (enExample) |
| IL (1) | IL114657A0 (enExample) |
| MX (1) | MX9602821A (enExample) |
| PL (1) | PL177873B1 (enExample) |
| WO (1) | WO1995020253A2 (enExample) |
Cited By (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6062679A (en) * | 1997-08-28 | 2000-05-16 | Hewlett-Packard Company | Printhead for an inkjet cartridge and method for producing the same |
| US6155675A (en) * | 1997-08-28 | 2000-12-05 | Hewlett-Packard Company | Printhead structure and method for producing the same |
| US6315393B1 (en) | 1999-04-30 | 2001-11-13 | Hewlett-Packard Company | Ink-jet printhead |
| US6626949B1 (en) | 1999-07-14 | 2003-09-30 | Biopro, Inc. | Diamond coated joint implant |
| US7048359B2 (en) | 1997-08-28 | 2006-05-23 | Hewlett-Packard Development Company, L.P. | Ink-jet printhead and method for producing the same |
| US7134381B2 (en) | 2003-08-21 | 2006-11-14 | Nissan Motor Co., Ltd. | Refrigerant compressor and friction control process therefor |
| US7146956B2 (en) | 2003-08-08 | 2006-12-12 | Nissan Motor Co., Ltd. | Valve train for internal combustion engine |
| US7228786B2 (en) | 2003-06-06 | 2007-06-12 | Nissan Motor Co., Ltd. | Engine piston-pin sliding structure |
| US7255083B2 (en) | 2002-10-16 | 2007-08-14 | Nissan Motor Co., Ltd. | Sliding structure for automotive engine |
| US7273655B2 (en) | 1999-04-09 | 2007-09-25 | Shojiro Miyake | Slidably movable member and method of producing same |
| US7284525B2 (en) | 2003-08-13 | 2007-10-23 | Nissan Motor Co., Ltd. | Structure for connecting piston to crankshaft |
| US7318514B2 (en) | 2003-08-22 | 2008-01-15 | Nissan Motor Co., Ltd. | Low-friction sliding member in transmission, and transmission oil therefor |
| US7322749B2 (en) | 2002-11-06 | 2008-01-29 | Nissan Motor Co., Ltd. | Low-friction sliding mechanism |
| US7397897B2 (en) | 2006-10-23 | 2008-07-08 | General Electric Company | Composite coating for improved wear resistance for x-ray tube bearings |
| US7406940B2 (en) | 2003-05-23 | 2008-08-05 | Nissan Motor Co., Ltd. | Piston for internal combustion engine |
| US7458585B2 (en) | 2003-08-08 | 2008-12-02 | Nissan Motor Co., Ltd. | Sliding member and production process thereof |
| US7492869B1 (en) | 2006-10-23 | 2009-02-17 | General Electric Company | Titanium carbide plus silver coated balls for x-ray tube bearings |
| US7500472B2 (en) | 2003-04-15 | 2009-03-10 | Nissan Motor Co., Ltd. | Fuel injection valve |
| US7505564B2 (en) | 2006-10-23 | 2009-03-17 | General Electric Company | Composite coating for improved wear resistance for x-ray tube bearings |
| US7572200B2 (en) | 2003-08-13 | 2009-08-11 | Nissan Motor Co., Ltd. | Chain drive system |
| US7771821B2 (en) | 2003-08-21 | 2010-08-10 | Nissan Motor Co., Ltd. | Low-friction sliding member and low-friction sliding mechanism using same |
| WO2011079068A1 (en) * | 2009-12-23 | 2011-06-30 | Edison Welding Institute, Inc. | Polygonal laser scanner for coating removal |
| US8096205B2 (en) | 2003-07-31 | 2012-01-17 | Nissan Motor Co., Ltd. | Gear |
| CN103114292A (zh) * | 2013-02-18 | 2013-05-22 | 梅河口市弘业无缝钢管有限公司 | 激光熔敷多元共渗复合处理的油井管、生产工艺及装置 |
| RU2516632C1 (ru) * | 2012-12-28 | 2014-05-20 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный технический университет имени Н.Э. Баумана" (МГТУ им. Н.Э. Баумана) | Способ получения алмазоподобных покрытий комбинированным лазерным воздействием |
| RU2583184C1 (ru) * | 2015-01-19 | 2016-05-10 | Владимир Павлович Бирюков | Состав светопоглощающего покрытия |
| US9375974B2 (en) | 2010-12-09 | 2016-06-28 | Edison Welding Institute, Inc. | Polygonal laser scanner and imaging system for coating removal |
| US9630206B2 (en) | 2005-05-12 | 2017-04-25 | Innovatech, Llc | Electrosurgical electrode and method of manufacturing same |
| CN111360415A (zh) * | 2020-03-20 | 2020-07-03 | 吉林大学 | 一种利用化学处理辅助激光加工制备金刚石涡旋光束发生器的方法及其应用 |
| CN115595536A (zh) * | 2017-05-26 | 2023-01-13 | 环球展览公司(Us) | 具有输出蒸汽压的时间稳定性的升华单元 |
Families Citing this family (91)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3503787B2 (ja) * | 1996-01-22 | 2004-03-08 | 貢 英 | 薄膜の形成方法 |
| US5954147A (en) * | 1997-07-09 | 1999-09-21 | Baker Hughes Incorporated | Earth boring bits with nanocrystalline diamond enhanced elements |
| GB9818484D0 (en) | 1998-08-26 | 1998-10-21 | Rolls Royce Plc | A method and apparatus for improving material properties |
| US6269540B1 (en) * | 1998-10-05 | 2001-08-07 | National Research Council Of Canada | Process for manufacturing or repairing turbine engine or compressor components |
| US6280834B1 (en) | 1999-05-03 | 2001-08-28 | Guardian Industries Corporation | Hydrophobic coating including DLC and/or FAS on substrate |
| US6491987B2 (en) * | 1999-05-03 | 2002-12-10 | Guardian Indusries Corp. | Process for depositing DLC inclusive coating with surface roughness on substrate |
| US6335086B1 (en) | 1999-05-03 | 2002-01-01 | Guardian Industries Corporation | Hydrophobic coating including DLC on substrate |
| US6461731B1 (en) | 1999-05-03 | 2002-10-08 | Guardian Industries Corp. | Solar management coating system including protective DLC |
| US6312808B1 (en) | 1999-05-03 | 2001-11-06 | Guardian Industries Corporation | Hydrophobic coating with DLC & FAS on substrate |
| US6277480B1 (en) | 1999-05-03 | 2001-08-21 | Guardian Industries Corporation | Coated article including a DLC inclusive layer(s) and a layer(s) deposited using siloxane gas, and corresponding method |
| US6447891B1 (en) | 1999-05-03 | 2002-09-10 | Guardian Industries Corp. | Low-E coating system including protective DLC |
| US6368664B1 (en) | 1999-05-03 | 2002-04-09 | Guardian Industries Corp. | Method of ion beam milling substrate prior to depositing diamond like carbon layer thereon |
| US6475573B1 (en) | 1999-05-03 | 2002-11-05 | Guardian Industries Corp. | Method of depositing DLC inclusive coating on substrate |
| US6338901B1 (en) | 1999-05-03 | 2002-01-15 | Guardian Industries Corporation | Hydrophobic coating including DLC on substrate |
| US6284377B1 (en) | 1999-05-03 | 2001-09-04 | Guardian Industries Corporation | Hydrophobic coating including DLC on substrate |
| US6579833B1 (en) | 1999-09-01 | 2003-06-17 | The Board Of Trustees Of The University Of Illinois | Process for converting a metal carbide to carbon by etching in halogens |
| US6756561B2 (en) | 1999-09-30 | 2004-06-29 | National Research Council Of Canada | Laser consolidation apparatus for manufacturing precise structures |
| US6504127B1 (en) | 1999-09-30 | 2003-01-07 | National Research Council Of Canada | Laser consolidation methodology and apparatus for manufacturing precise structures |
| US6779951B1 (en) | 2000-02-16 | 2004-08-24 | U.S. Synthetic Corporation | Drill insert using a sandwiched polycrystalline diamond compact and method of making the same |
| BR0104705B1 (pt) * | 2000-02-28 | 2012-02-07 | processo para produção de uma peça cilìndrica, parcialmente cilìndrica ou cilìndrica oca com superfìcie em liga. | |
| US6338754B1 (en) | 2000-05-31 | 2002-01-15 | Us Synthetic Corporation | Synthetic gasket material |
| US6593543B2 (en) * | 2000-07-20 | 2003-07-15 | David Benderly | Gemstone marking system and method |
| US7132309B2 (en) * | 2003-04-22 | 2006-11-07 | Chien-Min Sung | Semiconductor-on-diamond devices and methods of forming |
| US6659161B1 (en) * | 2000-10-13 | 2003-12-09 | Chien-Min Sung | Molding process for making diamond tools |
| JP2003058872A (ja) * | 2001-08-21 | 2003-02-28 | Sony Corp | 指紋検出装置、その製造方法及び成膜装置 |
| US6744072B2 (en) * | 2001-10-02 | 2004-06-01 | Xerox Corporation | Substrates having increased thermal conductivity for semiconductor structures |
| US7906221B2 (en) * | 2002-06-28 | 2011-03-15 | All-Clad Metalcrafters Llc | Bonded metal components having uniform thermal conductivity characteristics |
| US6926971B2 (en) * | 2002-06-28 | 2005-08-09 | All-Clad Metalcrafters Llc | Bonded metal components having uniform thermal conductivity characteristics and method of making same |
| US20040018749A1 (en) * | 2002-07-08 | 2004-01-29 | Dorfman Benjamin F. | Method of decreasing brittleness of single crystals, semiconductor wafers, and solid-state devices |
| JP2004055771A (ja) * | 2002-07-18 | 2004-02-19 | Nec Lcd Technologies Ltd | 半導体薄膜の製造方法及びレーザ照射装置 |
| EP1482190B1 (en) * | 2003-05-27 | 2012-12-05 | Nissan Motor Company Limited | Rolling element |
| JP2005008851A (ja) * | 2003-05-29 | 2005-01-13 | Nissan Motor Co Ltd | 硬質炭素薄膜付き機械加工工具用切削油及び硬質炭素薄膜付き機械加工工具 |
| EP1666573B1 (en) * | 2003-08-06 | 2019-05-15 | Nissan Motor Company Limited | Low-friction sliding mechanism and method of friction reduction |
| US6886736B1 (en) * | 2003-10-07 | 2005-05-03 | Veniamin V. Gubarev | Method of diffusion welding of different metals in air |
| JP4113509B2 (ja) * | 2004-03-09 | 2008-07-09 | スピードファム株式会社 | 被研磨物保持用キャリア |
| US20050220568A1 (en) * | 2004-03-31 | 2005-10-06 | Tokyo Electron Limited | Method and system for fastening components used in plasma processing |
| US8124509B2 (en) * | 2004-05-28 | 2012-02-28 | Intel Corporation | Method of forming porous diamond films for semiconductor applications |
| WO2006001340A1 (ja) * | 2004-06-23 | 2006-01-05 | Komatsu Denshi Kinzoku Kabushiki Kaisha | 両面研磨用キャリアおよびその製造方法 |
| WO2006032480A1 (de) * | 2004-09-23 | 2006-03-30 | Cemecon Ag | Zerspanungswerkzeug und verfahren zu seiner herstellung |
| CA2585009C (en) * | 2004-11-24 | 2014-09-30 | Nanosys, Inc. | Contact doping and annealing systems and processes for nanowire thin films |
| GB0426841D0 (en) * | 2004-12-07 | 2005-01-12 | Univ Brunel | Medical implant |
| US7867302B2 (en) * | 2005-02-22 | 2011-01-11 | Saint-Gobain Abrasives, Inc. | Rapid tooling system and methods for manufacturing abrasive articles |
| US7875091B2 (en) * | 2005-02-22 | 2011-01-25 | Saint-Gobain Abrasives, Inc. | Rapid tooling system and methods for manufacturing abrasive articles |
| US7524345B2 (en) * | 2005-02-22 | 2009-04-28 | Saint-Gobain Abrasives, Inc. | Rapid tooling system and methods for manufacturing abrasive articles |
| US20080166952A1 (en) * | 2005-02-25 | 2008-07-10 | Shin-Etsu Handotai Co., Ltd | Carrier For Double-Side Polishing Apparatus, Double-Side Polishing Apparatus And Double-Side Polishing Method Using The Same |
| US7147634B2 (en) | 2005-05-12 | 2006-12-12 | Orion Industries, Ltd. | Electrosurgical electrode and method of manufacturing same |
| GB2428611B (en) | 2005-08-02 | 2007-10-03 | Dormer Tools | Twist drill |
| WO2008030221A2 (en) * | 2005-08-18 | 2008-03-13 | Washington State University | System and method of laser dynamic forming |
| WO2007084501A2 (en) * | 2006-01-13 | 2007-07-26 | Group4 Labs, Llc | Method for manufacturing smooth diamond heat sinks |
| US20070256345A1 (en) | 2006-05-04 | 2007-11-08 | Hall David R | A Rigid Composite Structure with a Superhard Interior Surface |
| JP4904960B2 (ja) * | 2006-07-18 | 2012-03-28 | 信越半導体株式会社 | 両面研磨装置用キャリア及びこれを用いた両面研磨装置並びに両面研磨方法 |
| US7939142B2 (en) * | 2007-02-06 | 2011-05-10 | Ut-Battelle, Llc | In-situ composite formation of damage tolerant coatings utilizing laser |
| KR100898821B1 (ko) * | 2007-11-29 | 2009-05-22 | 주식회사 실트론 | 웨이퍼 캐리어의 제조방법 |
| JP4605233B2 (ja) * | 2008-02-27 | 2011-01-05 | 信越半導体株式会社 | 両面研磨装置用キャリア及びこれを用いた両面研磨装置並びに両面研磨方法 |
| US8505414B2 (en) * | 2008-06-23 | 2013-08-13 | Stanley Black & Decker, Inc. | Method of manufacturing a blade |
| US20100104874A1 (en) * | 2008-10-29 | 2010-04-29 | Smith International, Inc. | High pressure sintering with carbon additives |
| US8147599B2 (en) | 2009-02-17 | 2012-04-03 | Mcalister Technologies, Llc | Apparatuses and methods for storing and/or filtering a substance |
| EP2454393B1 (de) * | 2009-07-14 | 2016-09-28 | MSM Krystall GBR | Verfahren zur herstellung von wendeschneidplatten |
| US8769833B2 (en) | 2010-09-10 | 2014-07-08 | Stanley Black & Decker, Inc. | Utility knife blade |
| WO2012116261A1 (en) * | 2011-02-24 | 2012-08-30 | Toray Industries, Inc. | Reinforced interphase and bonded structures thereof |
| EP2721196B1 (en) | 2011-06-15 | 2019-10-30 | Tenneco Inc. | Germanium containing coating for inner surfaces of cylinder liners |
| US9314719B2 (en) | 2011-08-12 | 2016-04-19 | Mcalister Technologies, Llc | Filter having spiral-shaped distributor channels |
| US20140263209A1 (en) * | 2013-03-15 | 2014-09-18 | Matterfab Corp. | Apparatus and methods for manufacturing |
| US20140272794A1 (en) * | 2013-03-15 | 2014-09-18 | Clarion University of Pennsylvania | Surface modified dental implant |
| WO2014145882A1 (en) * | 2013-03-15 | 2014-09-18 | Mcalister Technologies, Llc | Methods of manufacture of engineered materials and devices |
| US9328976B1 (en) * | 2013-04-18 | 2016-05-03 | Mainstream Engineering Corporation | Method for production of novel materials via ultra-high energy electron beam processing |
| US9079489B2 (en) | 2013-05-29 | 2015-07-14 | Mcalister Technologies, Llc | Methods for fuel tank recycling and net hydrogen fuel and carbon goods production along with associated apparatus and systems |
| CN103353677B (zh) | 2013-06-28 | 2015-03-11 | 北京智谷睿拓技术服务有限公司 | 成像装置及方法 |
| CN103431840B (zh) | 2013-07-31 | 2016-01-20 | 北京智谷睿拓技术服务有限公司 | 眼睛光学参数检测系统及方法 |
| CN103424891B (zh) | 2013-07-31 | 2014-12-17 | 北京智谷睿拓技术服务有限公司 | 成像装置及方法 |
| CN103431980A (zh) | 2013-08-22 | 2013-12-11 | 北京智谷睿拓技术服务有限公司 | 视力保护成像系统及方法 |
| CN103439801B (zh) | 2013-08-22 | 2016-10-26 | 北京智谷睿拓技术服务有限公司 | 视力保护成像装置及方法 |
| CN103500331B (zh) | 2013-08-30 | 2017-11-10 | 北京智谷睿拓技术服务有限公司 | 提醒方法及装置 |
| WO2015072927A1 (en) | 2013-11-15 | 2015-05-21 | National University Of Singapore | Ordered growth of large crystal graphene by laser-based localized heating for high throughput production |
| GB2521395A (en) * | 2013-12-18 | 2015-06-24 | Skf Ab | Multi-material cage |
| JP6504673B2 (ja) | 2014-02-04 | 2019-04-24 | ナショナル ユニバーシティ オブ シンガポール | 金属結晶質基板上での、パルスレーザーを用いた大面積のグラフェンの合成方法 |
| EP3098677B1 (en) * | 2015-05-27 | 2019-05-08 | Ansaldo Energia IP UK Limited | Method for machining a component on a multi-axis machine tool driven by an nc-controller and apparatus for conducting said method |
| US11848037B2 (en) * | 2015-07-29 | 2023-12-19 | National University Of Singapore | Method of protecting a magnetic layer of a magnetic recording medium |
| WO2017132668A1 (en) * | 2016-01-29 | 2017-08-03 | Seurat Technologies, Inc. | Additive manufacturing, bond modifying system and method |
| KR20190124230A (ko) | 2017-02-01 | 2019-11-04 | 울트라 바이오텍스 리미티드 | 고 유전 강도 절연체 |
| US20180369961A1 (en) * | 2017-06-23 | 2018-12-27 | Applied Materials, Inc. | Treatment of solidified layer |
| JP6333502B1 (ja) * | 2017-11-17 | 2018-05-30 | 堺ディスプレイプロダクト株式会社 | フレキシブルoledデバイスの製造方法および製造装置 |
| CN108179248A (zh) * | 2018-01-18 | 2018-06-19 | 益福光(天津)电子科技有限公司 | 一种材料激光表面改性处理装置 |
| CN108251892B (zh) * | 2018-02-26 | 2021-03-23 | 湖北碳六科技有限公司 | 激光增强等离子体cvd制备单晶金刚石装置及其方法 |
| US11097376B2 (en) * | 2018-04-03 | 2021-08-24 | Main-Type Trading Co., Ltd. | Apparatus for treating a surface of a base material and a method for treating a surface of a base material |
| US12048910B2 (en) | 2018-07-11 | 2024-07-30 | Board Of Trustees Of Michigan State University | Vertically oriented plasma reactor |
| US12224165B2 (en) | 2019-12-06 | 2025-02-11 | Board Of Trustees Of Michigan State University | Magnetic-field-assisted plasma coating system |
| CN110923651B (zh) * | 2019-12-06 | 2021-10-15 | 福建工程学院 | 一种电磁波防护涂层及其制备方法 |
| CN113146042B (zh) * | 2021-03-12 | 2022-10-18 | 中国工程物理研究院材料研究所 | 一种能有效减少焊接孔洞的激光焊接B4C/Al的方法 |
| CN118600369A (zh) * | 2024-07-04 | 2024-09-06 | 武汉大学 | 一种碳基类金刚石薄膜制备用镀膜装置 |
| CN119710537A (zh) * | 2024-12-31 | 2025-03-28 | 河南机电职业学院 | 一种钛合金表面dlc涂层的制备方法 |
Family Cites Families (127)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4874596A (en) * | 1957-06-27 | 1989-10-17 | Lemelson Jerome H | Production of crystalline structures |
| FR1370722A (fr) | 1963-07-12 | 1964-08-28 | Comp Generale Electricite | Dispositif pour la synthèse du diamant |
| US3913280A (en) * | 1971-01-29 | 1975-10-21 | Megadiamond Corp | Polycrystalline diamond composites |
| US4139936A (en) * | 1977-07-05 | 1979-02-20 | Hughes Aircraft Company | Method of making hermetic coaxial cable |
| US4333986A (en) * | 1979-06-11 | 1982-06-08 | Sumitomo Electric Industries, Ltd. | Diamond sintered compact wherein crystal particles are uniformly orientated in a particular direction and a method for producing the same |
| US4536442A (en) * | 1979-08-23 | 1985-08-20 | General Electric Company | Process for making diamond and cubic boron nitride compacts |
| US4248606A (en) * | 1979-08-23 | 1981-02-03 | General Electric Company | Supported diamond |
| US4260397A (en) * | 1979-08-23 | 1981-04-07 | General Electric Company | Method for preparing diamond compacts containing single crystal diamond |
| US4388517A (en) * | 1980-09-22 | 1983-06-14 | Texas Instruments Incorporated | Sublimation patterning process |
| US4701592A (en) * | 1980-11-17 | 1987-10-20 | Rockwell International Corporation | Laser assisted deposition and annealing |
| US4343628A (en) * | 1981-01-27 | 1982-08-10 | The United States Of America As Represented By The United States Department Of Energy | Fluorinated diamond bonded in fluorocarbon resin |
| US4504519A (en) * | 1981-10-21 | 1985-03-12 | Rca Corporation | Diamond-like film and process for producing same |
| DE3364653D1 (en) * | 1982-04-15 | 1986-08-28 | Matsushita Electric Industrial Co Ltd | Method for producing crystals |
| US4495044A (en) * | 1983-05-17 | 1985-01-22 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Diamondlike flakes |
| US4437962A (en) * | 1983-05-17 | 1984-03-20 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Diamondlike flake composites |
| US4629373A (en) * | 1983-06-22 | 1986-12-16 | Megadiamond Industries, Inc. | Polycrystalline diamond body with enhanced surface irregularities |
| US4617181A (en) * | 1983-07-01 | 1986-10-14 | Sumitomo Electric Industries, Ltd. | Synthetic diamond heat sink |
| US4627503A (en) * | 1983-08-12 | 1986-12-09 | Megadiamond Industries, Inc. | Multiple layer polycrystalline diamond compact |
| US4568565A (en) * | 1984-05-14 | 1986-02-04 | Allied Corporation | Light induced chemical vapor deposition of conductive titanium silicide films |
| US4490229A (en) * | 1984-07-09 | 1984-12-25 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Deposition of diamondlike carbon films |
| US4770940A (en) * | 1984-09-10 | 1988-09-13 | Ovonic Synthetic Materials Company | Glow discharge method of applying a carbon coating onto a substrate and coating applied thereby |
| US4547257A (en) * | 1984-09-25 | 1985-10-15 | Showa Denko Kabushiki Kaisha | Method for growing diamond crystals |
| US4647546A (en) * | 1984-10-30 | 1987-03-03 | Megadiamond Industries, Inc. | Polycrystalline cubic boron nitride compact |
| US4603082A (en) * | 1985-04-29 | 1986-07-29 | Rca Corporation | Diamond-like film |
| US4797241A (en) * | 1985-05-20 | 1989-01-10 | Sii Megadiamond | Method for producing multiple polycrystalline bodies |
| JPS6221778A (ja) * | 1985-07-17 | 1987-01-30 | 東芝タンガロイ株式会社 | 立方晶窒化ホウ素被覆体及びその製造方法 |
| JPS6254588A (ja) * | 1985-08-30 | 1987-03-10 | Toyota Motor Corp | セラミツク粒子分散アルミニウム合金複合層の形成方法 |
| US5275798A (en) | 1986-07-11 | 1994-01-04 | Kyocera Corporation | Method for producing diamond films |
| US4681640A (en) * | 1986-08-06 | 1987-07-21 | The United States Of America As Represented By The Secretary Of The Army | Laser-induced chemical vapor deposition of germanium and doped-germanium films |
| US5064681A (en) * | 1986-08-21 | 1991-11-12 | International Business Machines Corporation | Selective deposition process for physical vapor deposition |
| JP2519750B2 (ja) * | 1986-09-26 | 1996-07-31 | 住友電気工業株式会社 | サ―ミスタとその製造方法 |
| US4751193A (en) * | 1986-10-09 | 1988-06-14 | Q-Dot, Inc. | Method of making SOI recrystallized layers by short spatially uniform light pulses |
| US4986214A (en) * | 1986-12-16 | 1991-01-22 | Mitsubishi Denki Kabushiki Kaisha | Thin film forming apparatus |
| EP0275063A3 (en) * | 1987-01-12 | 1992-05-27 | Sumitomo Electric Industries Limited | Light emitting element comprising diamond and method for producing the same |
| JP2555045B2 (ja) * | 1987-01-19 | 1996-11-20 | 株式会社日立製作所 | 薄膜形成方法及びその装置 |
| JPS63230887A (ja) * | 1987-03-18 | 1988-09-27 | Toyo Metal Kk | アルミニウム−セラミツク複合材 |
| US5270114A (en) | 1987-03-30 | 1993-12-14 | Crystallume | High thermal conductivity diamond/non-diamond composite materials |
| US5273825A (en) | 1987-03-30 | 1993-12-28 | Crystallume | Article comprising regions of high thermal conductivity diamond on substrates |
| US4882138A (en) * | 1987-03-30 | 1989-11-21 | Crystallume | Method for preparation of diamond ceramics |
| US5273790A (en) | 1987-03-30 | 1993-12-28 | Crystallume | Method for consolidating diamond particles to form high thermal conductivity article |
| US4849199A (en) * | 1987-03-30 | 1989-07-18 | Crystallume | Method for suppressing growth of graphite and other non-diamond carbon species during formation of synthetic diamond |
| US5015528A (en) * | 1987-03-30 | 1991-05-14 | Crystallume | Fluidized bed diamond particle growth |
| US5284709A (en) | 1987-03-30 | 1994-02-08 | Crystallume | Diamond materials with enhanced heat conductivity |
| US5075095A (en) * | 1987-03-30 | 1991-12-24 | Crystallume | Method for preparation of diamond ceramics |
| US5271971A (en) | 1987-03-30 | 1993-12-21 | Crystallume | Microwave plasma CVD method for coating a substrate with high thermal-conductivity diamond material |
| US5096352A (en) * | 1987-03-31 | 1992-03-17 | Lemelson Jerome H | Diamond coated fasteners |
| JPH0779958B2 (ja) * | 1987-05-08 | 1995-08-30 | 住友電気工業株式会社 | 大型ダイヤモンドの合成方法 |
| KR960016218B1 (ko) * | 1987-06-05 | 1996-12-07 | 가부시기가이샤 히다찌세이사꾸쇼 | 표면처리방법 및 그 장치 |
| US4830702A (en) * | 1987-07-02 | 1989-05-16 | General Electric Company | Hollow cathode plasma assisted apparatus and method of diamond synthesis |
| US5230931A (en) * | 1987-08-10 | 1993-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Plasma-assisted cvd of carbonaceous films by using a bias voltage |
| US5145711A (en) * | 1987-08-10 | 1992-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Cyclotron resonance chemical vapor deposition method of forming a halogen-containing diamond on a substrate |
| DE3830430A1 (de) * | 1987-09-11 | 1989-03-23 | Japan Synthetic Rubber Co Ltd | Verfahren zur herstellung von ueberzuegen |
| US5131963A (en) * | 1987-11-16 | 1992-07-21 | Crystallume | Silicon on insulator semiconductor composition containing thin synthetic diamone films |
| JP2597497B2 (ja) * | 1988-01-14 | 1997-04-09 | 洋一 広瀬 | 気相法ダイヤモンドの合成法 |
| JPH01201976A (ja) * | 1988-02-05 | 1989-08-14 | Sumitomo Electric Ind Ltd | ダイヤモンド固体レーザ素子、その製造方法およびその発振方法 |
| JPH01246116A (ja) * | 1988-03-29 | 1989-10-02 | Natl Inst For Res In Inorg Mater | 針状,繊維状,多孔質状ダイヤモンドまたはそれらの集合体の製造法 |
| US4987007A (en) * | 1988-04-18 | 1991-01-22 | Board Of Regents, The University Of Texas System | Method and apparatus for producing a layer of material from a laser ion source |
| US5098737A (en) * | 1988-04-18 | 1992-03-24 | Board Of Regents The University Of Texas System | Amorphic diamond material produced by laser plasma deposition |
| US4853250A (en) * | 1988-05-11 | 1989-08-01 | Universite De Sherbrooke | Process of depositing particulate material on a substrate |
| US4937094A (en) * | 1988-05-26 | 1990-06-26 | Energy Conversion Devices, Inc. | Method of creating a high flux of activated species for reaction with a remotely located substrate |
| US5093149A (en) * | 1988-05-26 | 1992-03-03 | Energy Conversion Devices, Inc. | Method of depositing directly activated species onto a remotely located substrate |
| US4925701A (en) * | 1988-05-27 | 1990-05-15 | Xerox Corporation | Processes for the preparation of polycrystalline diamond films |
| JPH0288498A (ja) * | 1988-06-13 | 1990-03-28 | Sumitomo Electric Ind Ltd | ダイヤモンドレーザ結晶およびその作製方法 |
| US4898748A (en) * | 1988-08-31 | 1990-02-06 | The Board Of Trustees Of Leland Stanford Junior University | Method for enhancing chemical reactivity in thermal plasma processes |
| NL8802335A (nl) * | 1988-09-21 | 1990-04-17 | Philips Nv | Werkwijze en inrichting voor het op sub-mikron schaal bewerken van een materiaal-oppervlak. |
| US4939763A (en) * | 1988-10-03 | 1990-07-03 | Crystallume | Method for preparing diamond X-ray transmissive elements |
| US5008737A (en) * | 1988-10-11 | 1991-04-16 | Amoco Corporation | Diamond composite heat sink for use with semiconductor devices |
| US5144110A (en) * | 1988-11-04 | 1992-09-01 | Marantz Daniel Richard | Plasma spray gun and method of use |
| JPH02192494A (ja) * | 1989-01-20 | 1990-07-30 | Sumitomo Electric Ind Ltd | 複合材料 |
| US4948629A (en) * | 1989-02-10 | 1990-08-14 | International Business Machines Corporation | Deposition of diamond films |
| US4957773A (en) * | 1989-02-13 | 1990-09-18 | Syracuse University | Deposition of boron-containing films from decaborane |
| US4981717A (en) * | 1989-02-24 | 1991-01-01 | Mcdonnell Douglas Corporation | Diamond like coating and method of forming |
| US5087434A (en) * | 1989-04-21 | 1992-02-11 | The Pennsylvania Research Corporation | Synthesis of diamond powders in the gas phase |
| GB8911599D0 (en) * | 1989-05-19 | 1989-07-05 | British Aerospace | Diffusion bonding of aluminium and aluminium alloys |
| US5127983A (en) * | 1989-05-22 | 1992-07-07 | Sumitomo Electric Industries, Ltd. | Method of producing single crystal of high-pressure phase material |
| US5106452A (en) * | 1989-06-05 | 1992-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of depositing diamond and diamond light emitting device |
| FR2647778B1 (fr) * | 1989-06-05 | 1992-11-20 | Comp Generale Electricite | Procede et dispositif de depot externe par plasma de silice exempte d'ions hydroxyles |
| JPH03193880A (ja) * | 1989-08-03 | 1991-08-23 | Mikakutou Seimitsu Kogaku Kenkyusho:Kk | 高圧力下でのマイクロ波プラズマcvdによる高速成膜方法及びその装置 |
| US5200231A (en) * | 1989-08-17 | 1993-04-06 | U.S. Philips Corporation | Method of manufacturing polycrystalline diamond layers |
| US5130111A (en) * | 1989-08-25 | 1992-07-14 | Wayne State University, Board Of Governors | Synthetic diamond articles and their method of manufacture |
| US5273731A (en) | 1989-09-14 | 1993-12-28 | General Electric Company | Substantially transparent free standing diamond films |
| US5045345A (en) * | 1989-10-31 | 1991-09-03 | The United States Of America As Represented By The Secretary Of The Navy | Energy beam treatment for improved adhesion of coatings to surfaces |
| JPH03164417A (ja) * | 1989-11-21 | 1991-07-16 | Mitsubishi Materials Corp | 人工ダイヤモンド材の製造法 |
| JPH03166369A (ja) * | 1989-11-22 | 1991-07-18 | Toyota Motor Corp | ダイヤモンド膜の形成方法 |
| US5082359A (en) * | 1989-11-28 | 1992-01-21 | Epion Corporation | Diamond films and method of growing diamond films on nondiamond substrates |
| US5169579A (en) * | 1989-12-04 | 1992-12-08 | Board Of Regents, The University Of Texas System | Catalyst and plasma assisted nucleation and renucleation of gas phase selective laser deposition |
| US5017317A (en) * | 1989-12-04 | 1991-05-21 | Board Of Regents, The Uni. Of Texas System | Gas phase selective beam deposition |
| US5080753A (en) * | 1989-12-06 | 1992-01-14 | General Motors Corporation | Laser deposition of crystalline boron nitride films |
| US5139591A (en) * | 1989-12-06 | 1992-08-18 | General Motors Corporation | Laser deposition of crystalline boron nitride films |
| US4954365A (en) * | 1989-12-18 | 1990-09-04 | The United States Of America As Represented By The Secretary Of The Army | Method of preparing a thin diamond film |
| US5096740A (en) * | 1990-01-23 | 1992-03-17 | Sumitomo Electric Industries, Ltd. | Production of cubic boron nitride films by laser deposition |
| US5213848A (en) * | 1990-02-06 | 1993-05-25 | Air Products And Chemicals, Inc. | Method of producing titanium nitride coatings by electric arc thermal spray |
| US5154945A (en) * | 1990-03-05 | 1992-10-13 | Iowa Laser Technology, Inc. | Methods using lasers to produce deposition of diamond thin films on substrates |
| JPH0649634B2 (ja) | 1990-03-26 | 1994-06-29 | 工業技術院長 | 水素プラズマジェットを用いた六方晶ダイヤモンドの合成法 |
| US5209812A (en) * | 1990-04-09 | 1993-05-11 | Ford Motor Company | Hot filament method for growing high purity diamond |
| US5094915A (en) * | 1990-05-16 | 1992-03-10 | The Ohio State University | Laser-excited synthesis of carbon films from carbon monoxide-containing gas mixtures |
| US5071677A (en) * | 1990-05-24 | 1991-12-10 | Houston Advanced Research Center | Halogen-assisted chemical vapor deposition of diamond |
| EP0458342A1 (en) | 1990-05-25 | 1991-11-27 | Idemitsu Petrochemical Company Limited | Method for preparation of diamond film-coated body |
| EP0459425A1 (en) * | 1990-05-30 | 1991-12-04 | Idemitsu Petrochemical Company Limited | Process for the preparation of diamond |
| US5264071A (en) | 1990-06-13 | 1993-11-23 | General Electric Company | Free standing diamond sheet and method and apparatus for making same |
| DE4021182A1 (de) | 1990-07-03 | 1992-01-16 | Plasma Technik Ag | Vorrichtung zur beschichtung der oberflaeche von gegenstaenden |
| US5215788A (en) * | 1990-07-06 | 1993-06-01 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Combustion flame method for forming diamond films |
| US5126207A (en) * | 1990-07-20 | 1992-06-30 | Norton Company | Diamond having multiple coatings and methods for their manufacture |
| US5260106A (en) | 1990-08-03 | 1993-11-09 | Fujitsu Limited | Method for forming diamond films by plasma jet CVD |
| JPH0791632B2 (ja) * | 1991-07-12 | 1995-10-04 | 川崎重工業株式会社 | 無機誘電体薄膜の製造方法 |
| DE59108883D1 (de) | 1990-09-07 | 1997-12-11 | Sulzer Metco Ag | Apparatur zur plasmathermischen Bearbeitung von Werkstückoberflächen |
| CA2049673A1 (en) | 1990-11-26 | 1992-05-27 | James F. Fleischer | Cvd diamond by alternating chemical reactions |
| US5221411A (en) * | 1991-04-08 | 1993-06-22 | North Carolina State University | Method for synthesis and processing of continuous monocrystalline diamond thin films |
| US5236740A (en) | 1991-04-26 | 1993-08-17 | National Center For Manufacturing Sciences | Methods for coating adherent diamond films on cemented tungsten carbide substrates |
| US5221501A (en) * | 1991-06-11 | 1993-06-22 | The United States Of America As Represented By The Secretary Of Commerce | Method of producing a smooth plate of diamond |
| US5080752A (en) * | 1991-07-08 | 1992-01-14 | The United States Of America As Represented By The Secretary Of The Navy | Consolidation of diamond packed powders |
| US5176788A (en) * | 1991-07-08 | 1993-01-05 | The United States Of America As Represented By The Secretary Of The Navy | Method of joining diamond structures |
| US5234724A (en) * | 1991-08-08 | 1993-08-10 | Schmidt Instruments, Inc. | Low energy ion doping of growing diamond by cvd |
| DE4126216B4 (de) | 1991-08-08 | 2004-03-11 | Unaxis Deutschland Holding Gmbh | Vorrichtung für Dünnschichtverfahren zur Behandlung großflächiger Substrate |
| US5242711A (en) | 1991-08-16 | 1993-09-07 | Rockwell International Corp. | Nucleation control of diamond films by microlithographic patterning |
| JPH07113147B2 (ja) | 1991-11-01 | 1995-12-06 | 工業技術院長 | 新炭素材料の製造方法 |
| US5209916A (en) * | 1991-11-25 | 1993-05-11 | Gruen Dieter M | Conversion of fullerenes to diamond |
| US5174826A (en) * | 1991-12-06 | 1992-12-29 | General Electric Company | Laser-assisted chemical vapor deposition |
| US5270077A (en) | 1991-12-13 | 1993-12-14 | General Electric Company | Method for producing flat CVD diamond film |
| US5230740A (en) * | 1991-12-17 | 1993-07-27 | Crystallume | Apparatus for controlling plasma size and position in plasma-activated chemical vapor deposition processes comprising rotating dielectric |
| US5366556A (en) | 1992-01-10 | 1994-11-22 | Robert Prince | Process and apparatus for production of diamond-like films |
| US5290368A (en) | 1992-02-28 | 1994-03-01 | Ingersoll-Rand Company | Process for producing crack-free nitride-hardened surface on titanium by laser beams |
| US5290392A (en) | 1992-06-05 | 1994-03-01 | Trw Inc. | Single crystal diamond wafer fabrication |
| US5273788A (en) | 1992-07-20 | 1993-12-28 | The University Of Utah | Preparation of diamond and diamond-like thin films |
| US5236545A (en) * | 1992-10-05 | 1993-08-17 | The Board Of Governors Of Wayne State University | Method for heteroepitaxial diamond film development |
| US5264061A (en) | 1992-10-22 | 1993-11-23 | Motorola, Inc. | Method of forming a three-dimensional printed circuit assembly |
| US5308661A (en) | 1993-03-03 | 1994-05-03 | The Regents Of The University Of California | Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate |
-
1994
- 1994-05-12 US US08/241,930 patent/US5731046A/en not_active Expired - Fee Related
-
1995
- 1995-01-17 CN CN95191718A patent/CN1141602A/zh active Pending
- 1995-01-17 CA CA002181440A patent/CA2181440A1/en not_active Abandoned
- 1995-01-17 BR BR9506560A patent/BR9506560A/pt unknown
- 1995-01-17 CZ CZ962112A patent/CZ211296A3/cs unknown
- 1995-01-17 MX MX9602821A patent/MX9602821A/es unknown
- 1995-01-17 WO PCT/US1995/000782 patent/WO1995020253A2/en not_active Ceased
- 1995-01-17 PL PL95315582A patent/PL177873B1/pl unknown
- 1995-01-17 EP EP95913954A patent/EP0739250A4/en not_active Withdrawn
- 1995-01-17 AU AU21147/95A patent/AU2114795A/en not_active Abandoned
- 1995-07-18 IL IL11465795A patent/IL114657A0/xx unknown
-
1996
- 1996-07-18 KR KR967003928A patent/KR970700949A/ko active Pending
Cited By (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6155675A (en) * | 1997-08-28 | 2000-12-05 | Hewlett-Packard Company | Printhead structure and method for producing the same |
| US6062679A (en) * | 1997-08-28 | 2000-05-16 | Hewlett-Packard Company | Printhead for an inkjet cartridge and method for producing the same |
| US7048359B2 (en) | 1997-08-28 | 2006-05-23 | Hewlett-Packard Development Company, L.P. | Ink-jet printhead and method for producing the same |
| US7273655B2 (en) | 1999-04-09 | 2007-09-25 | Shojiro Miyake | Slidably movable member and method of producing same |
| US6315393B1 (en) | 1999-04-30 | 2001-11-13 | Hewlett-Packard Company | Ink-jet printhead |
| US6626949B1 (en) | 1999-07-14 | 2003-09-30 | Biopro, Inc. | Diamond coated joint implant |
| US7255083B2 (en) | 2002-10-16 | 2007-08-14 | Nissan Motor Co., Ltd. | Sliding structure for automotive engine |
| US8152377B2 (en) | 2002-11-06 | 2012-04-10 | Nissan Motor Co., Ltd. | Low-friction sliding mechanism |
| US7322749B2 (en) | 2002-11-06 | 2008-01-29 | Nissan Motor Co., Ltd. | Low-friction sliding mechanism |
| US7500472B2 (en) | 2003-04-15 | 2009-03-10 | Nissan Motor Co., Ltd. | Fuel injection valve |
| US7406940B2 (en) | 2003-05-23 | 2008-08-05 | Nissan Motor Co., Ltd. | Piston for internal combustion engine |
| US7228786B2 (en) | 2003-06-06 | 2007-06-12 | Nissan Motor Co., Ltd. | Engine piston-pin sliding structure |
| US8096205B2 (en) | 2003-07-31 | 2012-01-17 | Nissan Motor Co., Ltd. | Gear |
| US7146956B2 (en) | 2003-08-08 | 2006-12-12 | Nissan Motor Co., Ltd. | Valve train for internal combustion engine |
| US7458585B2 (en) | 2003-08-08 | 2008-12-02 | Nissan Motor Co., Ltd. | Sliding member and production process thereof |
| US7284525B2 (en) | 2003-08-13 | 2007-10-23 | Nissan Motor Co., Ltd. | Structure for connecting piston to crankshaft |
| US7572200B2 (en) | 2003-08-13 | 2009-08-11 | Nissan Motor Co., Ltd. | Chain drive system |
| US7771821B2 (en) | 2003-08-21 | 2010-08-10 | Nissan Motor Co., Ltd. | Low-friction sliding member and low-friction sliding mechanism using same |
| US7134381B2 (en) | 2003-08-21 | 2006-11-14 | Nissan Motor Co., Ltd. | Refrigerant compressor and friction control process therefor |
| US7318514B2 (en) | 2003-08-22 | 2008-01-15 | Nissan Motor Co., Ltd. | Low-friction sliding member in transmission, and transmission oil therefor |
| US11246645B2 (en) | 2005-05-12 | 2022-02-15 | Innovatech, Llc | Electrosurgical electrode and method of manufacturing same |
| US10463420B2 (en) | 2005-05-12 | 2019-11-05 | Innovatech Llc | Electrosurgical electrode and method of manufacturing same |
| US9630206B2 (en) | 2005-05-12 | 2017-04-25 | Innovatech, Llc | Electrosurgical electrode and method of manufacturing same |
| US7492869B1 (en) | 2006-10-23 | 2009-02-17 | General Electric Company | Titanium carbide plus silver coated balls for x-ray tube bearings |
| US7505564B2 (en) | 2006-10-23 | 2009-03-17 | General Electric Company | Composite coating for improved wear resistance for x-ray tube bearings |
| US7397897B2 (en) | 2006-10-23 | 2008-07-08 | General Electric Company | Composite coating for improved wear resistance for x-ray tube bearings |
| US8481886B2 (en) | 2009-12-23 | 2013-07-09 | Edison Welding Institute | Polygonal laser scanner for coating removal |
| WO2011079068A1 (en) * | 2009-12-23 | 2011-06-30 | Edison Welding Institute, Inc. | Polygonal laser scanner for coating removal |
| US9375974B2 (en) | 2010-12-09 | 2016-06-28 | Edison Welding Institute, Inc. | Polygonal laser scanner and imaging system for coating removal |
| RU2516632C1 (ru) * | 2012-12-28 | 2014-05-20 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный технический университет имени Н.Э. Баумана" (МГТУ им. Н.Э. Баумана) | Способ получения алмазоподобных покрытий комбинированным лазерным воздействием |
| CN103114292A (zh) * | 2013-02-18 | 2013-05-22 | 梅河口市弘业无缝钢管有限公司 | 激光熔敷多元共渗复合处理的油井管、生产工艺及装置 |
| RU2583184C1 (ru) * | 2015-01-19 | 2016-05-10 | Владимир Павлович Бирюков | Состав светопоглощающего покрытия |
| CN115595536A (zh) * | 2017-05-26 | 2023-01-13 | 环球展览公司(Us) | 具有输出蒸汽压的时间稳定性的升华单元 |
| CN111360415A (zh) * | 2020-03-20 | 2020-07-03 | 吉林大学 | 一种利用化学处理辅助激光加工制备金刚石涡旋光束发生器的方法及其应用 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0739250A4 (en) | 1998-09-02 |
| EP0739250A1 (en) | 1996-10-30 |
| WO1995020253A3 (en) | 1995-08-24 |
| CN1141602A (zh) | 1997-01-29 |
| CZ211296A3 (en) | 1997-08-13 |
| PL315582A1 (en) | 1996-11-12 |
| BR9506560A (pt) | 1999-03-23 |
| KR970700949A (enExample) | 1997-02-12 |
| AU2114795A (en) | 1995-08-08 |
| IL114657A0 (en) | 1995-11-27 |
| US5731046A (en) | 1998-03-24 |
| MX9602821A (es) | 1997-12-31 |
| CA2181440A1 (en) | 1995-07-27 |
| PL177873B1 (pl) | 2000-01-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO1995020253A2 (en) | Using lasers to fabricate coatings on substrates | |
| EP0752018A1 (en) | Surface treatment techniques | |
| US5620754A (en) | Method of treating and coating substrates | |
| US5635243A (en) | Method of coating an organic substrate | |
| RU2435871C2 (ru) | Способ получения поверхностей высокого качества и изделие с поверхностью высокого качества | |
| Cherukuri et al. | Pulsed laser deposition of AlMgB14 on carbide inserts for metal cutting | |
| Zhang et al. | An experimental study on laser cutting mechanisms of polycrystalline diamond compacts | |
| Singh | Laser-beam and photon-assisted processed materials and their microstructures | |
| Lin et al. | Precision machining of single crystal diamond cutting tool via picosecond laser irradiation | |
| Cappelli et al. | WC–Co cutting tool surface modifications induced by pulsed laser treatment | |
| US20020145235A1 (en) | Process and apparatus for sequential multi-beam laser processing of materials | |
| TW394800B (en) | Surface modification and/or fabrication techniques | |
| AU2693899A (en) | Using lasers to fabricate diamond, diamond-like carbon, and other material coatings on substrates | |
| Tehniat et al. | Surface morphology correlated with sputtering yield measurements of laser-ablated iron | |
| Croonen et al. | Laser induced chemical vapour deposition of TiN coatings at atmospheric pressure | |
| JPH09511436A (ja) | 基体上に、レーザーを使用してダイヤモンド、ダイヤモンド様炭素、その他の材料のコーティングをつくる方法 | |
| JPH0424424B2 (enExample) | ||
| WO2000007752A1 (en) | An improved continuous casting mold system and related processes | |
| Kreutz et al. | Large area pulsed laser deposition of ceramic films | |
| JP3035337B2 (ja) | プラズマ被膜形成装置 | |
| Bol'shakov et al. | A laser plasmotron for chamberless deposition of diamond films | |
| JPH01127630A (ja) | 硬質合金の製造方法 | |
| Huang et al. | Pulsed laser deposition of high-quality diamond-like carbon films under an inhomogeneous magnetic field | |
| JPS6338427B2 (enExample) | ||
| Naumov et al. | Laser plasmatron for CVD synthesis of diamond in open air |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WWE | Wipo information: entry into national phase |
Ref document number: 95191718.8 Country of ref document: CN |
|
| AK | Designated states |
Kind code of ref document: A2 Designated state(s): AM AT AU BB BG BR BY CA CH CN CZ DE DK EE ES FI GB GE HU JP KE KG KP KR KZ LK LR LT LU LV MD MG MN MW MX NL NO NZ PL PT RO RU SD SE SI SK TJ TT UA US US US UZ VN |
|
| AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): KE MW SD SZ AT BE CH DE DK ES FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN ML MR NE SN TD TG |
|
| CFP | Corrected version of a pamphlet front page | ||
| CR1 | Correction of entry in section i |
Free format text: PAT.BUL.32/95, UNDER INID(54)"TITLE",REPLACE THE EXISTING TEXT BY"USING LASERS TO FABRICATE DIAMOND,DIAMOND-LIKE CARBON,AND OTHER MATERIAL COATINGS ON SUBSTRATES" |
|
| AK | Designated states |
Kind code of ref document: A3 Designated state(s): AM AT AU BB BG BR BY CA CH CN CZ DE DK EE ES FI GB GE HU JP KE KG KP KR KZ LK LR LT LU LV MD MG MN MW MX NL NO NZ PL PT RO RU SD SE SI SK TJ TT UA US US US UZ VN |
|
| AL | Designated countries for regional patents |
Kind code of ref document: A3 Designated state(s): KE MW SD SZ AT BE CH DE DK ES FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN ML MR NE SN TD TG |
|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
| DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
| WWE | Wipo information: entry into national phase |
Ref document number: 2181440 Country of ref document: CA Ref document number: PV1996-2112 Country of ref document: CZ Ref document number: 283176 Country of ref document: NZ |
|
| WWE | Wipo information: entry into national phase |
Ref document number: 1995913954 Country of ref document: EP Ref document number: 1199690053 Country of ref document: VN |
|
| WWP | Wipo information: published in national office |
Ref document number: 1995913954 Country of ref document: EP |
|
| REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
| WWP | Wipo information: published in national office |
Ref document number: PV1996-2112 Country of ref document: CZ |
|
| WWR | Wipo information: refused in national office |
Ref document number: PV1996-2112 Country of ref document: CZ |
|
| WWW | Wipo information: withdrawn in national office |
Ref document number: 1995913954 Country of ref document: EP |