TW394800B - Surface modification and/or fabrication techniques - Google Patents

Surface modification and/or fabrication techniques Download PDF

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Publication number
TW394800B
TW394800B TW084107358A TW84107358A TW394800B TW 394800 B TW394800 B TW 394800B TW 084107358 A TW084107358 A TW 084107358A TW 84107358 A TW84107358 A TW 84107358A TW 394800 B TW394800 B TW 394800B
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Taiwan
Prior art keywords
substrate
laser
diamond
carbon
coating
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TW084107358A
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Chinese (zh)
Inventor
Pravin Mistry
Manuel C Turchan
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Qqc Inc
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Priority claimed from PCT/US1995/000782 external-priority patent/WO1995020253A2/en
Priority claimed from PCT/US1995/005941 external-priority patent/WO1995031584A1/en
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Publication of TW394800B publication Critical patent/TW394800B/en

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Laser energy is directed at a substrate to mobilize, vaporize and react a constituent (primary) element (e.g., carbon) contained within the substrate, so as to modify the composition (e.g., crystalline structure) of the constituent element, and to diffuse the modified constituent back into the substrate, as an adjunct to fabricating a coating (e.g., diamond or diamond-like carbon) on the surface of the substrate. This creats a conversion zone immediately beneath the substrate, which transitions metallurgically from the ocmposition of the underlying substrate to a composition of the coating being fabricated on the surface of the substrate, which results in diffusion bonding of the coating to the substrate. Additional (secondary) similar (e.g., carbon) or dissimilar elements may be introduced in a reaction zone on and above the surface of the substrate to augment the fabrication of and to determine the composition of the coating. The laser energy is provided by a combination of an excimer laser, an Nd:YAG laser and a CO2 laser, the output beams of which are preferably directed through a nozzle delivering the secondary element to the reaction zone. The reaction zone is shielded by an inert (non-reactive) shielding gas (e,g,, N2) delivered through the nozzle. A flat plasma is created by the lasers, constituent element and secondary element on the surface of the substrate and the flat plasma optionally extends around the edges of the substrate to fabricate a ocating thereon. Pretreatment and coating fabrication can be performed in conjunction with one another (in-situ). Alternatively, a substrate can be pre-treated to characterize its surface for subsequent coating. In either case, certain advantageous metallurgical changes are included in the substrate due to the pre-treatment. The processes (pre-treatment and coating fabrication) are suitably performed in ambient, without preheating the substrate and without a vacuum. Substrates of numerous geometries, sizes and shapes, such as flat cutting tool inserts as well as round cutting tools, are readily coated in this manner. The lasers are directed at any suitable angle (including coaxial) relative to the substrate and or the plasma.

Description

88-5 α 88-5 α 經濟部中央標準局貞工消费合作社印裝 五、發明説明() —— 5 插入物’例如與鈷合併之碳化筹(wc/c )。而基質中存有 錯,欲施覆金剛石鍍雇至工具插入物時,可能產生一個問 題。在碳化物工具中出現的鈷結合相特別會”毒害"到金剛 石的核化及生長過程,並導致碳石墨而非金剛石(或ELC) 的形成。 雷射輔助被覆方法: 使用雷射所供應的能量以在一基質上形成金剛石鍵層 或鍍臈的方法,在近來已漸為人所熟知》以下所討論的一 些採用雷射能量的技法為此類技法中的幾個典型,將引述 於本文中以作為背景資料。在此引用的文獻皆以USP”( 表示美國專利號瑪)為首,後接以括弧内的字母及數字( 分別代表"第一個發明人",發證日期,主分類/次分類) ,且全部加以劃線。 USP 5,154,945( "BALDWIN" 10/92 ; 427/596)提出了 二種沈積金剛石薄膜在基質上的技巧。在一實施例(" BALDWIN-I")中,此薄膜的沈積是將CK (甲烷)及η (氫) 的混合氣體導入一 CVD室中,並在雷射照射在基質表面上 之情形下,使其流遍欲被覆之基質的全表面。此實施例通 常會受限於傳統CVD方法原本所具各種限制。在另一個實 施例("BALDWIN-I)中,將純碳以煤煙形態送至欲施以被覆 的表面上,且在大氣中將雷射光束照射在此表面上,以避 免碳燃燒成0〇2。在此_WIN- Ε中,0¾氣體雷射光束以 垂直入射角來照射欲被覆之表面。在基質及雷射光束之間 的移動會使得基質表面上的極小區域以最小能量輸入產生 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁) :'(裝-----j—訂---- /银|88-5 α 88-5 α Printed by Zhengong Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs 5. Description of the Invention () —— 5 Inserts ’such as carbonized chips (wc / c) combined with cobalt. There is an error in the matrix, and a problem may arise when diamond plating is applied to the tool insert. The presence of cobalt-bound phases in carbide tools is particularly "poisoning" to the nucleation and growth of diamond and results in the formation of carbon graphite instead of diamond (or ELC). Laser-assisted coating methods: Use of laser-supplied coatings The method of forming a diamond bond layer or hafnium plating on a substrate has recently become well-known. Some of the techniques discussed below using laser energy are typical of such techniques, and will be cited in This article is used as background information. The documents cited here are led by USP "(for US Patent No. Ma), followed by the letters and numbers in parentheses (representing " the first inventor " respectively, the date of certification , Primary / secondary classification), and all are underlined. USP 5,154,945 (" BALDWIN "10/92; 427/596) proposes two techniques for depositing diamond films on a substrate. In an embodiment (" BALDWIN-I "), the thin film is deposited by introducing a mixed gas of CK (methane) and η (hydrogen) into a CVD chamber, and a laser beam is irradiated onto the surface of the substrate. To flow across the entire surface of the substrate to be covered. This embodiment is usually limited by the limitations originally imposed by conventional CVD methods. In another embodiment (" BALDWIN-I), pure carbon is sent to the surface to be coated in the form of soot, and a laser beam is irradiated on the surface in the atmosphere to avoid carbon burning to 〇2. In this _WIN-E, the 0¾ gas laser beam illuminates the surface to be covered at a normal incidence angle. The movement between the substrate and the laser beam will cause a very small area on the surface of the substrate to be generated with the minimum energy input. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling (This page): '(install ----- j-order ---- / silver |

I 經濟部中央標準局員工消費合作社印製 A7 __B7___ 五、發明説明(丄) 發明領域: 本發明乃是關於基質(譬如金屬基質)的表面處理, 此表面處理包括在基質表面上製成諸如金剛石或似金剛石 碳的物質。 發明背景: 本發明乃是關於在基質上製成例如:金剛石,似金剛 石碳(DLC),立方晶氮化硼(CBN) ,B4C,SiC,TiC,Cr3C2,TiN TiB2 , Si3 N4及cCN之鍍層(被覆層在下文中,將會討論 到碳化鎢切割工具嵌入物(基質)之金剛石鍍層的製造,但 本發明並不僅限於此。 一般來說,在基質上鍍上金剛石或似金剛石碳(DLC ) 可加強基層的.特性。譬如說,被覆以金剛石(或DLC)之切 割工具嵌入物(嵌刃)通常可以達到較大的工具速度,進刀 率及切割深度,獲得較長的工具壽命,對工作件產生優異 的加工成果,並可進行乾式機械加工(不需潤滑)。當施覆 以金剛石(或DLC)後,圓形刀具,如:鑽刀及端銑刀也可得 到相同的優點。 CVD沈積(澱積)方法: 1 目前有許多化學蒸氣沈積(CVD )(亦稱化學蒸鍍)的沈 積方法可用以殿積金剛石鍍層(鏡膜)。一般來說,這些製 程方法包括氫與甲烷先驅氣體的游離與電離,接著被傳送 及沈積(如沈澱)在受熱基質上。一般來說,這些製程包括 使用電漿,微波,熱燈絲,離子束及電子束作為能源,以 及使用混合〇·5%〜2.0%的甲烷與平衡氫氣的混合氣體來 -2 -I Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 __B7___ V. Description of the Invention (丄) Field of the Invention: The invention relates to the surface treatment of substrates (such as metal substrates). This surface treatment includes making diamonds on the surface of the substrate, such as diamond Or diamond-like carbon. Background of the invention: The present invention relates to coatings on substrates such as: diamond, diamond-like carbon (DLC), cubic boron nitride (CBN), B4C, SiC, TiC, Cr3C2, TiN TiB2, Si3 N4 and cCN. (Cover Layer In the following, the manufacture of diamond coatings for tungsten carbide cutting tool inserts (substrates) will be discussed, but the invention is not limited thereto. Generally, diamond or diamond-like carbon (DLC) is plated on the substrate It can strengthen the characteristics of the substrate. For example, cutting tool inserts (insert blades) covered with diamond (or DLC) can usually achieve greater tool speeds, infeed rates and cutting depths, and obtain longer tool life. The work piece produces excellent machining results and can be dry-machined (no lubrication required). When coated with diamond (or DLC), round tools such as drills and end mills can also obtain the same advantages. CVD deposition (deposition) methods: 1 There are currently many chemical vapor deposition (CVD) (also known as chemical vapor deposition) deposition methods that can be used to deposit diamond coatings (mirror films). Generally, these process methods include The hydrogen and methane precursor gases are released and ionized, and then transported and deposited (such as precipitated) on a heated substrate. Generally speaking, these processes include the use of plasma, microwave, hot filament, ion beam and electron beam as energy sources, and Use a mixed gas of 0.5% ~ 2.0% methane and balanced hydrogen to -2-

本紙張尺度適用石國國i標準(CNS) A4規格(27^7^iT j-^-I —---裝! (請先閲讀背面之注意事項再填寫本頁) 訂 kHgi 經濟部中央標準局負工消費合作社印製 88.lt δ 五、發明説明() 9 掃過基質表面時,由於未溶化基質的熱吸收,所以不在雷 射光束下的熔化地區將會快速凝固GAVIGAN也論及此方 法對其它鈦合金也有效,這些鈦合金在其成分中含有其它 強氮化物形成物,例如:鈒、何、碳及銘。雖然文中並無 指出形成鍵層的内容,但在此善意而無成見地引述GAVIGAN 本質上是以雷射在其他材料(即,除鋼以外)上實施其它方 法(即’形成鍍層以外的方法)的典型代表。儘管其提示似 乎只限於在鈦及其合金表面上形成無裂紋滲氮硬化表面之 製法》 USP 5,236,545(”PRYOR" ; 8/93 ; 156/613 ),文中提 到的製法包括:在含氮的大氣中使用氮化六硼靶材之雷射 熔削’以在矽基質上沈積氮化立方晶硼(CBN)層來作為第 一界面層’其次是在有原子氫存在的情況下,以使用碳乾 材之雷射熔削來沈積氫终結碳的第二界面層,接著是使用 傳统化學蒸氣沈積(CVD)技法以沈積一層異質外延金剛石 膜。 USP 5,098,737("C〇LLINSM ; 3/92 ; 427/53.1)提出以 非垂直入射肖來照射雷射光束至靶材之方法。此專利在製 造似金剛石碳薄膜之研究的四個主要方法,即:離子束 沈積法,化學蒸氣沈積法,電漿強化化學蒸氣沈積法 ,喷鐘沈積法上’提供了很有用的背景資料。概括言之 ,此專利提出了在真空室中照射雷射以撞擊置於真空室令 的石墨箔製連續帶狀移動材。雷射光束是集中在勒材上 以溶削並喷出一柱礙蒸氣,藉此以使這柱竣蒸氣由雷射光 -10 - ¥紙i尺度適用中國國家標率(CNS)M規格(21〇><297公® ) ~~ ---— (請先閲讀背面之注意事項再填寫本頁)This paper size is applicable to Shikoku i Standard (CNS) A4 specifications (27 ^ 7 ^ iT j-^-I —--- installed! (Please read the precautions on the back before filling out this page) Printed by the Industrial and Commercial Cooperatives 88.lt δ V. Description of the invention (9) When sweeping over the surface of the substrate, the melting area that is not under the laser beam will rapidly solidify due to the heat absorption of the undissolved substrate. Other titanium alloys are also effective. These titanium alloys contain other strong nitride formations in their composition, such as: hafnium, Ho, carbon, and inscriptions. Although the content of forming the bond layer is not indicated in the text, it is well-intentioned and not prejudiced here. Quoting GAVIGAN is essentially a typical example of laser-implemented other methods (ie, methods other than 'plating') on other materials (ie, other than steel). Although its hint seems to be limited to the formation of "Manufacturing Method for Crack Nitriding Hardened Surface" USP 5,236,545 ("PRYOR ";8/93; 156/613), the method mentioned in the article includes: Laser melting using a hexaboron nitride target in a nitrogen-containing atmosphere" Silicon-based Deposit a nitrided cubic boron (CBN) layer on the substrate as the first interface layer 'followed by the use of laser melting of carbon dry material in the presence of atomic hydrogen to deposit a hydrogen-terminated carbon second interface layer , Followed by the traditional chemical vapor deposition (CVD) technique to deposit a layer of heteroepitaxial diamond film. USP 5,098,737 ("COLLINSM;3/92; 427 / 53.1) proposes to irradiate the laser beam to the target with a non-normal incidence angle This patent provides four useful methods for the research of manufacturing diamond-like carbon thin films, namely: ion beam deposition, chemical vapor deposition, plasma enhanced chemical vapor deposition, and clock spray deposition. In summary, this patent proposes to irradiate a laser in a vacuum chamber to impinge on a continuous strip-shaped moving material made of graphite foil placed in a vacuum chamber. The laser beam is focused on the material to be melted and sprayed. A column is obstructed by the vapor, so that the vapor of this column is completed by laser light -10-¥ paper i scale applies Chinese National Standard (CNS) M specification (21〇 > < 297 公 ®) ~~ --- — (Please read the notes on the back before filling this page )

經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(2 ) 作為碳來源(先驅氣體)。一般而言,採用CVD的一種或他 種形式的處理方法或過程原本就受限於必須使用真空室( 因此使得製程變得複雜,並限制了可蒸鍍之基質的大小) ,以及涉及非常重要的對基質之加熱與後續的冷卻控制( 因此限制了對於某些型態的基層的功效)。加熱基質以便 於施以鍍層處理的需求,在許多方面上常是反生產性的。 這種加熱於整個基質(即基度的大量加熱)可能令造成基質 的變形,並且損及基質上原呈現的回火(熱處理)特性。譬 如說,在熱燈絲CVD方法中,使用鎢或纽燈絲來加熱先驅 氣體至大約2000°C。基質溫度的範圍為600-1100°C。CVD 方法的另一個缺點為在鍍上有限數量的部品時,其循還時 間通常要數個小時之譜。一般來說,其沈澱(沈積)率很低 ,大約為每小時l-l〇A£m(使用氫與甲燒先驅氣體時)。其 它類似於CVD的沈殿方法也受到同樣的限制。 在DC電讓CVD中,直流電孤可用來游離先驅氣體,並 可提供高於其它先前技術方法的氣體量及速度。 微波(或電漿加強微波)CVD使用微波來激發先驅氣體 ,以達到每小時幾個微米(micron)的沈殿率。使用此方法 所澱積的鍍層較易得到非常高的純度。 另一種與CVD有密切關係的鍍層形成方法為物理蒸氣 澱積法(PVD )。在PVD中,放置在真空室中的乾材被蒸發, 恰與CVD法相反,因CVD法是自外將出氣體導入真空室中。 在CVD與;PVD (如:沈澱型態)處理過程中: •必須要提高基質的溫度到達相當可觀的程度(注意 -3 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐) 裝 訂 (請先閲讀背面之注意事項再填寫本頁) 五、發明説明 A' ΙΓ 經濟部中央標準局員工消費合作社印製 15 雷射,分裂其輸出光束’以第一輸ώ光束照射材料源(靶 材)以蒸發此材料,並以第二輸出光束照射基質0蒸發之 乾材在基質上形成一薄膜。此薄膜將置放在一可避免乾材 飛漱(熱凝結粒子喷出或是乾材之液體滴出)的位置 ’且第二輸出光束是用來退火沈積(在基質上)薄膜(濃 縮物體的薄膜)。 【前述技術的缺點】 上述製各種方法可稱為“沈積”方法,所望材料(如 ••金剛石)藉此方法形成並沈積在基質表面上。使用這些 方法’最佳只不過是在沈積鍍層及基質之間形成一分子鍵 ’而此一分子鍵在沈積鍍層及基質之間的“黏著力”(機 械鍵)相當有限。在某些應用中,如:在切削工具插入物 上鍍覆時,金剛石對基質的黏著力是非常重要的。此外, 沈積锻廣的最後表面磨光尚需要各種不同的後加工處理步 釋,以達到鏡層部分的最後理想表面精加工。 前述習知鍍覆方法也易受限於只能在基質上形成一薄 臈(或層)。這有類似雨落在草地上並結冰的情形。所得 到的冰層相當硬,但拫薄,並且由薄冰層(鍵層)到底下 的草地(基質)之間,厚度的變化很陡Α肖。這會造成很差 的磨力分佈,因此,施壓時,薄冰層容易龜裂般來說 ,鍍層的厚度會反應出鍍層所承受的壓力。 一般來說,習知方法的沈積率很低,需要對基質作事 前加熱及事後冷卻,無法在一般周園環境中完成(因此嚴 格限制了基質的大小),且不適合锻覆某些基質(如:含 -16 - Λ ^裝 打 L, '線 (請先聞讀背面之:^意事領再填寫本頁) 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 經濟部中央標率局員工消費合作社印製 A7 _B7_ 五、發明説明(3 ) > 在 PVD 中產生DLC型態的鍍層時並不需高溫)。 •在殘餘先驅體(氣體或蒸發之靶材物質)像雪花般澱 積在正被鍍膜處理之表面上的期間,需有一段有效冷卻時 間(2〜5小時)。這會導致此一鏡層的表面比蒸鍍前的表面 粗糙許多,因此通常還需要事後處理以達到較平滑的表面 Ο •當金鋼石(或DLC )鍍層沈積時,通常會形成非結晶 形的鍍層,其中包含具有較高濃度氫的SP2-鍵合碳,或SP2-鍵合碳以及SP3-鍵合碳。 • CVD與;PVD兩方法均會澱積一&質在基質表面上,並 依賴分子鍵,以及某種機械鍵接。 • PVD鍍層較易產生氣孔。而CVD鍍層則比PVD鍍層較 少產生氣孔。 •CVD與PVD兩方法一般只限於適合鍍著平坦表面,或 是簡單(非複雜幾何型)的圓形表面。 •可鍍之基質的大小受限於實施此作業之真空室的大 小;基質的直徑大小通常小於8吋。 •因為這些方法主要是依據沈積型態(即一般為定向 沈澱)機構,所以基質的另一面可能呈現陰影或不均勻的 沈積。 • CVD方法也需要基質準備作業(在鍍覆之前),作業 包括表面之化學性改質、催化等。 美國專利公報 USP 5,038,661號("FENG'5/94; 427/535) ,名稱為"在具碳被覆層之基質上形成平滑表面的金鋼石 -4 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X2)7公釐) 本 訂 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局貝工消費合作社印裝 五、發明説明() 18 系統以及降低成本方面的重要性。除此之外,這些文章也 明確指出現有系統的限制。在最近‘兩個刊物中,‘‘製造 工程”(SME出版’ 1993年11月,ρρ· 37-42)以及“塑 勝技術”(1994年1月,ρρ. 40-44 ),都強調快速原型 及製造系统的重要。在其他文章中,例如··有關雷射燒結 那一篇,也指出快速原型製作的現狀。 一般而言’現有快速原型製作技術方法以選擇性地切 割材料層為CAD資料所界定義的形狀來製造物體。如“製 造工程”(1993年11月)所提及,“現有gp (快速原型 製作)技巧的目標是原型材料,能在提高溫度時提供更高 的強度。此工業需要的是完全金屬模(不使用燒結材料) 以便有效地分析物體。”除此之外,這篇文章也指出直接 製造零件是快速原型製作的最终步驟。此外,此文也強調 了材料的重要性’以及雖然有一些實驗性的快速原型製作 系统是以銘融金屬及金屬粉來作業,但他們仍不是高強度 且完全密度的金屬。 以下將插述習用之製造物體的方法(如:快速原型製 作)。下述的美國專利(已併入本文做為參考提述)指出 了立體石版印刷術及物體製造的現狀: USP 5,260,009 ( “製造3D物體的系統、方法以及其 製程Tyr~ ~ ~ USP 5,256,340 ( “以立體平版印刷術來製造3D物艚 始方法”); ~ USP 5,^48,456 ( “製造立體平版印刷術物體的方法 -19 - 本纸银又度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閱請背面之注意事項再填寫本頁) -----------,—訂-------/ί I I— ml In 1^1 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(Λ) 4 ' 膜的前處理方法"在本文中特予引述,其中提及了 CVD方 法,並揭示了將一含碳被覆層施覆在基質的表面上,而上 述含碳被覆層具有足夠的濃度與厚度以使得在基質表面上 所產生的被覆層的碳原子有至少為10原子/#m2的均勻的密 度或濃度。接著,將已被覆碳層的基質置於在一微波電漿 強化之化學蒸氣沈澱(MECVD )系統中的真空室内之微波電 漿中’並將甲院及氫氣導入系統中。經過這些前處理步驟 之後’使用傳統方法,例如:在高壓下(高於前處理的壓 力),且減低甲烷流量(甲烷與氫的比率為〇 15%〜4 〇% 的甲烷,最好是〇.5%〜1·〇%的甲烷WMECVD法,以在被 覆之基質上產生一金剛石廣。FENG與本方法的不同處特別 是在於:本發明的表面處理過程並不需要以含碳被覆層在 基質上作第一被覆層;本發明的表面處理技法不需要用CVD 方法,及本發明的表面處理技法是採用較佳的雷射能量來 造成基質上的被覆層。然而,FENG對於在基質上施覆金剛 石塗層的傳統(即,公認的)方法之建議為使用一cVD方法。 钴中毒: 在被覆或蒸鍍過程中,特別是在CVD (及相關的)過程 中,在一碳化鎢基質上形成一金鋼石(或DLC)鍍層時,通 常都會面臨一個問題。碳化物(在錄黏合劑上的碳化嫣顆 粒)長久以來一直作為切剴工具及插入(嵌入)物之用,特 別是用來切割(機械加工)鐵與非鐵物質,或是研磨材料, 如:鋁及其合金、銅、黃銅、塑膠、陶瓷、鈦,強化纖維 合成物及石墨。各種不同形式的碳化物一直是作為工具及 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) —^---r--------丨、玎 (請先閱讀背面之注意事項再填寫本頁) 88.lt δ ΙΓ 五、發明説明() 19 與裝置”); USP 5,247,180 ( “立體平版印:刷術裝置及使用方& );— _ USP 5,236,637 ( “以立體平版印刷術來製造3D物爝 方法與裝置”^ "在 USP 5,017,317 ( “MARCUS” ; 5/91; 264/81) ,名稱為“氣相選擇光束沈積”,描述了使用雷射來ϋ 零件的方法,其中提到以電腦控制一導向能量光束(如: 雷射)來將雷射能量大量地照射到一内含一氣相材料的室 内中,此材料就是用來沈積以期最好能產生氣相的光分解 或熱分解,並且在要製成的零件所要的橫斷面區域内,選 擇性地沈積材料。對每個横斷面區域而言,光束的目標是 在橫斷面區域的範圍内沈積材料。接下來的每一層與前一 層連結在一起,以製造包含許多連結層的零件》 【發明目的】 本發明的目的是提供一改進之技術方法,用以施加( 製作)一被覆層,特別是將金剛石(或DLC )鍍層鍍在基 質上,如··切割工具插入物,特別是鍍在包含商用範圍的 銘的切削工具插入物或一圓形切削工具上。 本發明的另一個目的是提供在周遭(非真空)還境中 ,將鏡層鐘在基質上的技術方法。 本發明的另一個目的是提供在不加熱(或預熱)整個 基質的情形中,控制處理時的熱平衡,使不影響整個基質 的情況下,將鍍層鍍在基質上的技術方法。 -20 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) f 靖毛聞讀背面之a意事項再填寫本耳) -丁 、-·° 經濟部中央標準局員工消費合作社印製 • - - ί. » - - HI - -i In IK 1- · [ 88-5 α 88-5 α 經濟部中央標準局貞工消费合作社印裝 五、發明説明() —— 5 插入物’例如與鈷合併之碳化筹(wc/c )。而基質中存有 錯,欲施覆金剛石鍍雇至工具插入物時,可能產生一個問 題。在碳化物工具中出現的鈷結合相特別會”毒害"到金剛 石的核化及生長過程,並導致碳石墨而非金剛石(或ELC) 的形成。 雷射輔助被覆方法: 使用雷射所供應的能量以在一基質上形成金剛石鍵層 或鍍臈的方法,在近來已漸為人所熟知》以下所討論的一 些採用雷射能量的技法為此類技法中的幾個典型,將引述 於本文中以作為背景資料。在此引用的文獻皆以USP”( 表示美國專利號瑪)為首,後接以括弧内的字母及數字( 分別代表"第一個發明人",發證日期,主分類/次分類) ,且全部加以劃線。 USP 5,154,945( "BALDWIN" 10/92 ; 427/596)提出了 二種沈積金剛石薄膜在基質上的技巧。在一實施例(" BALDWIN-I")中,此薄膜的沈積是將CK (甲烷)及η (氫) 的混合氣體導入一 CVD室中,並在雷射照射在基質表面上 之情形下,使其流遍欲被覆之基質的全表面。此實施例通 常會受限於傳統CVD方法原本所具各種限制。在另一個實 施例("BALDWIN-I)中,將純碳以煤煙形態送至欲施以被覆 的表面上,且在大氣中將雷射光束照射在此表面上,以避 免碳燃燒成0〇2。在此_WIN- Ε中,0¾氣體雷射光束以 垂直入射角來照射欲被覆之表面。在基質及雷射光束之間 的移動會使得基質表面上的極小區域以最小能量輸入產生 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁) :'(裝-----j—訂---- /银|Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (2) As a carbon source (pioneer gas). Generally speaking, one or other forms of processing methods or processes using CVD are inherently limited to the need to use a vacuum chamber (thus making the process complicated and limiting the size of the substrate that can be vaporized), and involve very important Substrate heating and subsequent cooling control (thus limiting the effectiveness of certain types of substrates). The need to heat the substrate to facilitate the coating process is often counterproductive in many respects. This heating to the entire substrate (that is, a large amount of heating at the basic level) may cause deformation of the substrate and damage the tempering (heat treatment) characteristics originally exhibited on the substrate. For example, in the hot filament CVD method, tungsten or a button filament is used to heat the precursor gas to about 2000 ° C. The substrate temperature ranges from 600-1100 ° C. Another disadvantage of the CVD method is that when a limited number of parts are plated, the recovery time usually takes several hours. Generally speaking, its precipitation (sedimentation) rate is very low, about 1-10 A £ m per hour (when using hydrogen and methylbenzene precursor gas). Other Shen Dian methods similar to CVD suffer from the same limitations. In DC electrokinetic CVD, DC galvanic isolation can be used to dissociate the precursor gas, and can provide a higher gas volume and speed than other prior art methods. Microwave (or plasma enhanced microwave) CVD uses microwaves to excite the precursor gas to achieve a Shen Dian rate of several micron per hour. Deposits deposited using this method can easily obtain very high purity. Another method for forming a coating layer that is closely related to CVD is physical vapor deposition (PVD). In PVD, the dry material placed in the vacuum chamber is evaporated, which is the opposite of the CVD method, because the CVD method introduces the outgas into the vacuum chamber from the outside. In the process of CVD and PVD (eg: precipitation type): • The temperature of the substrate must be raised to a considerable degree (Note-3-This paper size applies to Chinese National Standard (CNS) A4 size (210 X 297 mm) )) Binding (please read the precautions on the back before filling this page) 5. Description of the invention A 'ΙΓ Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 15 Lasers, splitting its output beam' Illuminating the material with the first beam The source (target) is used to evaporate the material, and the second output beam is irradiated to the substrate. The evaporated dry material forms a thin film on the substrate. This film will be placed on a surface to prevent the dry material from flying away (spraying of thermally condensed particles or Is the position where the liquid drips out of the dry material 'and the second output beam is used to anneal the deposited (on the substrate) film (thin film of the concentrated object). [Disadvantages of the foregoing technology] The various methods described above can be referred to as "deposition" Method, the desired material (such as diamond) is formed and deposited on the surface of the substrate. Using these methods' best is only to form a molecular bond between the deposit and the substrate The "adhesion" (mechanical bond) of this molecular bond between the deposit and the substrate is quite limited. In some applications, such as when plating on cutting tool inserts, the adhesion of diamond to the substrate is very Important. In addition, the polishing of the final surface of the deposition and forging requires various post-processing steps to achieve the final ideal surface finishing of the mirror layer portion. The foregoing conventional plating method is also easily limited to A thin ridge (or layer) is formed on the substrate. This is similar to the situation where rain falls on the grass and freezes. The resulting ice layer is quite hard, but it is thin and consists of a thin ice layer (bond layer) to the grass below. (Substrate), the thickness changes very steeply. This will cause a poor distribution of the grinding force. Therefore, when the pressure is applied, the thin ice layer is easy to crack. Generally speaking, the thickness of the coating will reflect the pressure on the coating. Generally speaking, the deposition rate of the conventional method is very low. It requires heating and cooling of the substrate beforehand, and it cannot be completed in the general environment of the garden (so the size of the substrate is strictly limited), and it is not suitable for forging some substrates. (Such as: -16-Λ ^ installed with L, 'line (please read the back: ^ Italian consul before filling out this page) This paper size applies the Chinese National Standard (CNS) A4 size (210X297 mm) Economy Printed by A7 _B7_ in the Consumer Cooperatives of the Ministry of Standards and Standards of the People's Republic of China. 5. Description of the Invention (3) > High temperature is not required to produce DLC-type coatings in PVD. • Residual precursors (gas or evaporated target materials) ) A period of effective cooling time (2 to 5 hours) is required during the snowflake-like deposition on the surface being coated. This will cause the surface of this mirror layer to be much rougher than the surface before evaporation, so it is usually still Post-treatment is required to achieve a smoother surface. 0 • When a diamond (or DLC) coating is deposited, an amorphous coating is usually formed, which contains SP2-bonded carbon with a high concentration of hydrogen, or SP2-bonds. Bonded carbon and SP3-bonded carbon. • Both CVD and PVD methods deposit an & substance on the surface of the substrate and rely on molecular bonds and some kind of mechanical bonding. • PVD coating is more prone to pores. In contrast, CVD coatings have less porosity than PVD coatings. • CVD and PVD methods are generally limited to flat surfaces suitable for plating or simple (non-complex geometry) round surfaces. • The size of the substrate that can be plated is limited by the size of the vacuum chamber in which the operation is performed; the diameter of the substrate is usually less than 8 inches. • Because these methods are mainly based on the type of deposition (that is, generally directional precipitation), the other side of the substrate may appear shaded or unevenly deposited. • The CVD method also requires substrate preparation (before plating), which includes chemical modification of the surface and catalysis. U.S. Patent Gazette USP No. 5,038,661 (" FENG'5 / 94; 427/535), entitled " Diamond-4 which forms a smooth surface on a substrate with a carbon coating-4-This paper size applies to Chinese national standards ( CNS) A4 specification (210X2) 7 mm) This order (please read the notes on the back before filling out this page) Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives 5. Description of the invention () 18 System and cost reduction importance. In addition, these articles clearly point out the limitations of existing systems. In recent two publications, "Manufacturing Engineering" (SME Publishing) November 1993, ρρ · 37-42) and "Success Technology" (January 1994, ρρ. 40-44), both emphasize fast Prototyping and manufacturing systems are important. In other articles, such as the one on laser sintering, the status of rapid prototyping is also pointed out. Generally speaking, the existing rapid prototyping technology method is to selectively cut material layers to CAD To create objects in the shape defined by the data. As mentioned in "Manufacturing Engineering" (November 1993), "The goal of existing gp (rapid prototyping) techniques is to prototype materials that provide higher strength at elevated temperatures . What this industry needs is a complete metal mold (without the use of sintered materials) in order to efficiently analyze objects. In addition, this article also points out that direct manufacturing of parts is the final step in rapid prototyping. In addition, this article also emphasizes the importance of materials' and although some experimental rapid prototyping systems are based on Mingrong Metal And metal powder to work, but they are still not high-strength and full-density metal. The following will introduce the conventional methods of manufacturing objects (such as: rapid prototyping). The following US patents (which have been incorporated herein by reference for reference) (Description) points out the current status of stereolithography and object manufacturing: USP 5,260,009 ("Systems and methods for manufacturing 3D objects and their processes Tyr ~ ~ ~ USP 5,256,340 (" Initial method for manufacturing 3D objects using stereolithography ") ; ~ USP 5, ^ 48,456 ("Methods for the manufacture of three-dimensional lithographic objects-19-This paper is again applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the notes on the back before filling in (This page) -----------, -Order ------- / ί II— ml In 1 ^ 1 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention ( Λ) 4 'front of membrane The physical method is specifically quoted in this article, which refers to the CVD method and discloses that a carbon-containing coating layer is applied on the surface of the substrate, and the carbon-containing coating layer has a sufficient concentration and thickness so that The carbon atoms of the coating layer produced on the surface of the substrate have a uniform density or concentration of at least 10 atoms / # m2. Next, the substrate with the carbon layer is placed in a microwave plasma-enhanced chemical vapor deposition (MECVD) The microwave plasma in the vacuum chamber of the system 'and introduces the A hospital and hydrogen into the system. After these pre-treatment steps' use traditional methods, such as: under high pressure (higher than the pre-treatment pressure), and reduce methane flow (The ratio of methane to hydrogen is 0.15 to 40% methane, preferably 0.5 to 1.0% methane WMECVD method to produce a diamond on the coated substrate. FENG and the method The differences are in particular that the surface treatment process of the present invention does not require a carbon-containing coating layer as the first coating layer on the substrate; the surface treatment technique of the present invention does not require a CVD method, and the surface treatment technique of the present invention. A better laser energy is used to create a coating on the substrate. However, FENG's recommendation for the traditional (ie, recognized) method of applying a diamond coating on the substrate is to use a cVD method. Cobalt poisoning: on the coating Or during vapor deposition, especially in CVD (and related) processes, a diamond (or DLC) coating is often encountered on a tungsten carbide substrate. Carbides (on adhesives) Carbonized particles) has long been used as cutting tools and inserts (inserts), especially for cutting (machining) iron and non-ferrous materials, or abrasive materials, such as aluminum and its alloys, copper, Brass, plastic, ceramic, titanium, reinforced fiber composites and graphite. Various types of carbides have been used as tools and the paper size applies Chinese National Standard (CNS) A4 specifications (210X297 mm) — ^ --- r -------- 丨, 玎 (Please read the back first Please pay attention to this page before filling in this page) 88.lt δ ΙΓ V. Description of the invention () 19 and device "); USP 5,247,180 (" Three-dimensional lithography: brushing device and user &); — _ USP 5,236,637 ( "Method and device for manufacturing 3D objects using stereolithography" ^ " In USP 5,017,317 ("MARCUS"; 5/91; 264/81), the name is "Gas Selective Beam Deposition", which describes the use of lasers Come to the method of parts, which mentioned the use of a computer to control a guided energy beam (such as laser) to irradiate a large amount of laser energy into a room containing a gas phase material, this material is used to deposit the best Can produce gas phase photodecomposition or thermal decomposition, and selectively deposit materials in the cross-sectional area required for the part to be made. For each cross-sectional area, the beam is targeted at the cross-section Material is deposited within the area. Each subsequent layer Joining with the previous layer to make parts containing many connecting layers "[Objective of the Invention] The object of the present invention is to provide an improved technical method for applying (making) a coating layer, especially diamond (or DLC) The coating is plated on a substrate, such as a cutting tool insert, especially a cutting tool insert containing a commercially available name or a circular cutting tool. Another object of the present invention is to provide ambient (non-vacuum) In another aspect, a technical method for placing a mirror layer clock on a substrate. Another object of the present invention is to provide a method for controlling the thermal balance during processing without heating (or preheating) the entire substrate so as not to affect the entire substrate. The technical method of plating the coating on the substrate is as follows: -20-This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) f Jing Maowen reads the a notice on the back of the paper and fills in this ear)-Ding, -· ° Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs •--ί. »--HI--i In IK 1- · [88-5 α 88-5 α Printed by the Zhengong Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs, Invention is described in () - 5 inserts' merger e.g. cobalt carbide chip (wc / c). There is an error in the matrix, and a problem may arise when diamond plating is applied to the tool insert. The presence of cobalt-bound phases in carbide tools is particularly "poisoning" to the nucleation and growth of diamond and results in the formation of carbon graphite instead of diamond (or ELC). Laser-assisted coating methods: Use of laser-supplied coatings The method of forming a diamond bond layer or hafnium plating on a substrate has recently become well-known. Some of the techniques discussed below using laser energy are typical of such techniques, and will be cited in This article is used as background information. The documents cited here are led by USP "(for US Patent No. Ma), followed by the letters and numbers in parentheses (representing " the first inventor " respectively, the date of certification , Primary / secondary classification), and all are underlined. USP 5,154,945 (" BALDWIN "10/92; 427/596) proposes two techniques for depositing diamond films on a substrate. In an embodiment (" BALDWIN-I "), the thin film is deposited by introducing a mixed gas of CK (methane) and η (hydrogen) into a CVD chamber, and a laser beam is irradiated onto the surface of the substrate. To flow across the entire surface of the substrate to be covered. This embodiment is usually limited by the limitations originally imposed by conventional CVD methods. In another embodiment (" BALDWIN-I), pure carbon is sent to the surface to be coated in the form of soot, and a laser beam is irradiated on the surface in the atmosphere to avoid carbon burning to 〇2. In this _WIN-E, the 0¾ gas laser beam illuminates the surface to be covered at a normal incidence angle. The movement between the substrate and the laser beam will cause a very small area on the surface of the substrate to be generated with the minimum energy input. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling (This page): '(install ----- j-order ---- / silver |

II

五、發明説明() 20 經濟部中央標準局員工消費合作社印製 本發明的另一個目的是提供在基質上形成一擴散鍵結 鍵層的技術方法* : 本發明的另一個目的是提供所有鋼合金’包括不銹鋼 ’非鐵類材料或合金,以及其他材料,如:陶究類及聚合 體,之基質處理的技術方法。 本發明的另一個目的是提供可形成具有可裁製之形狀 、厚度、及組成之鐘層的技術方法。 本發明的另一個目的是提供不需另行事後處理精磨加 工之處理基質的技術方法。 本發明的另一個目的是提供以異質外延方式來處理基 質的方法,如:對人工金剛石,DLC,或其他結晶材料。 本發明的另一個目的是提供處理具有複雜幾何形狀之 基質的技術方法。 本發明的另一個目的是提供製作一工具或插入物(特 別是切削工具)的技術方法。 本發明的另一個目的是提供一在基質(如:切削工具 或插入物)上被覆(鍍覆)的技術方法,特別是被覆以金 剛石或似金剛石鍍層以及其他材料,這是在對於礙化物呈 現強韌性方式,即使在具有相當高的鈷含量下,對高速銅 、陶瓷、塑膠上的DLC (障壁鍍層等)、以及其他切削工 具材料有用的情況下,以及可在低溫與低壓下執行的情況 下完成的。 本發明的另一個目的是提供可增進鍍廣與基質黏著力 的方法,特別是金剛石鐘層(和DI」C )以友其他村料,是 -21 - a表I— (請先聞讀背雨之注意事項再填寫本貢)V. Description of the Invention (20) Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Another objective of the present invention is to provide a technical method for forming a diffusion bonding layer on a substrate *: Another object of the present invention is to provide all steel Alloys include stainless steel and non-ferrous materials or alloys, as well as other materials, such as ceramics and polymers, and substrate processing techniques. Another object of the present invention is to provide a technical method capable of forming a clock layer having a shape, thickness, and composition that can be cut. It is another object of the present invention to provide a technical method for treating a substrate without the need for additional post-treatment fine grinding processing. Another object of the present invention is to provide a method for treating a substrate in a heteroepitaxial manner, such as for artificial diamond, DLC, or other crystalline materials. Another object of the present invention is to provide a technical method for processing a substrate having a complicated geometry. Another object of the present invention is to provide a technical method for making a tool or insert, especially a cutting tool. Another object of the present invention is to provide a technical method for coating (plating) on a substrate (such as a cutting tool or an insert), especially a diamond or diamond-like coating and other materials. Strong toughness method, even if it has a very high cobalt content, is useful for high-speed copper, ceramics, plastic DLC (barrier plating, etc.), and other cutting tool materials, and can be performed at low temperature and low pressure Finished. Another object of the present invention is to provide a method that can improve the adhesion between the coating and the substrate, especially the diamond clock layer (and DI "C). It is -21-a. Table I— (Please read and read (Notes of rain, please fill out this tribute)

-1T 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公釐) 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(6) 瞬間加熱,並造成此表面的金剛石澱積而幾乎不會產生基 質的擾流。 使用雷射能量而不會影響基質的傳統方法也在 USP 5,273,7 88( "YU" ; 12/93 ; 427/554 )中提到過,其名 稱為”金剛石及似金剛石薄膜的製備",文中提到藉由 Langmuir-Blodgett技巧來將一層碳氫化合物分子覆蓋在 基質上,並以雷射照射此表面,以分解表面上的分子層, 而不致影響到基質。 USP 4,981,717("THALER" ; 1/1/91 ; 427/53,1 ),名 稱為似金剛石鏡層及其形成方法",文中提到由碳氫化合 物氣體先驅體的電漿(等離子體)以沈積似金剛石薄膜的方 法。此電漿是由發射至氣體中並由與氣體混合的”啟爆物. 吸收的雷射脈波所產生的。此爆炸產生了離子,離子基, 分子碎片及電子的電漿,此電漿是由此爆震壓力波推進至 基質,並在其上沈澱。此種技巧及其類似技巧就像是雨( 金剛石分子)落在池塘(欲鍍覆之基質)一樣,且易於產生 與基質黏著不隹的鍍層,並需要事後的修整磨岩以獲得基 質上理想的表面鍍層。 THALER討論了先驅氣體,如:碳氫化合物(譬如:甲 烷、乙烷,丙烷、乙炔),或類似碳氳化合物及蒸氣的使 用。此氣體是以強烈熱力裂化分解,以形成許多高能力碎 片,離子,離子基與自由電子。裂化是將碳氫化合物置放 在強烈雷射脈波下完成的,例如:使用具有50個亳微秒( nanosecond)的波’及10“瓦特/cm2的電力輸出的c〇2雷射 本紙張尺度適用中國國家標準(CNS ) Α4規格(21〇Χ297公釐) ^--------裝-----|、玎 (請先閱讀背面之注意事項再填窝本頁) ί 經濟部中央標準局貝工消費合作社印製 88.11. δ Λ 7 1Γ 五、發明説明() 21 在對碳化物呈現強韌方式,以及能在低溫與低壓下執行之 方式下完成的。 : 本發明的另一個目的是提供處理基質表面的技術方法 ,以在基質表面下提供一擴散鍵結複合材料。 本發明的另一個目的是提供材料之處理及製造的技術 方法,以產生具有所需複合材料的物體,例如:金剛石、-1T This paper size is in accordance with Chinese National Standard (CNS) A4 (210 × 297 mm) Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs A7 B7 V. Description of the invention (6) Instantaneous heating and causing diamond deposition on this surface There is almost no matrix turbulence. The traditional method of using laser energy without affecting the substrate is also mentioned in USP 5,273,7 88 (" YU ";12/93; 427/554), whose name is "Preparation of Diamond and Diamond-Like Films" ; The article mentions that a layer of hydrocarbon molecules is covered on the substrate by the Langmuir-Blodgett technique, and the surface is irradiated with laser light to decompose the molecular layer on the surface without affecting the substrate. USP 4,981,717 (" THALER ";1/1/91; 427 / 53,1), the name is diamond-like mirror layer and its forming method ", the article mentions the plasma (plasma) of the hydrocarbon gas precursor to deposit diamond-like Thin film method. This plasma is generated by a laser pulse that is emitted into the gas and mixed with the "detonator." This explosion produced a plasma of ions, ionic groups, molecular fragments, and electrons. This plasma was propelled to the substrate by the detonation pressure wave and precipitated on it. This technique and similar techniques are like rain (diamond molecules) falling on the pond (the substrate to be plated), and it is easy to produce a coating that does not adhere to the substrate, and it is necessary to trim the grinding rock afterwards to obtain the ideal on the substrate. Surface coating. THALER discusses the use of precursor gases such as hydrocarbons (such as methane, ethane, propane, acetylene), or similar carbohydrates and vapors. This gas is decomposed by intense thermal cracking to form many high-capacity fragments, ions, ionic groups, and free electrons. Cracking is done by placing hydrocarbons under intense laser pulses, for example, using a co2 laser paper with 50 'nanosecond waves' and a power output of 10 "watts / cm2. Standards are applicable to China National Standard (CNS) Α4 specifications (21〇 × 297 mm) ^ -------- installation ----- |, 玎 (please read the precautions on the back before filling in this page) ί Printed by the Bayer Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 88.11. Δ Λ 7 1Γ V. Description of the invention (21) The method of toughening carbides and performing it under low temperature and low pressure are completed. Another object of the present invention is to provide a technical method for treating the surface of a substrate, so as to provide a diffusion-bonded composite material under the surface of the substrate. Another object of the present invention is to provide a technical method for processing and manufacturing the material, so as to produce a material having a desired composite. Objects such as diamonds,

DLC、氮化三蝴(CBN)、B*C、SiC、TiC、Cr3C2、TiN 、TiB2、Si 3N 4和cCN、銳、碳化物、後化鈦、破化銘等 〇 本發明的另一個目的是提供在基質上製作“設計者” 的鏡層的技術方法。 本發明的另一個目的是提供可製作有用之金屬、陶竟 、及複合部分為最後狀態的系統,而不需要任何事後處埋 (在系統環境外)精加工,以及具有加強的物理性質,這 是由其它目前已知的裝置所無法製造出來的本案進步的強 化複合物質所帶來。 本發明的另一個目的是來提供用以事前處理(準備) 基質以便於處理後藉由本發明或現有之技巧鍍覆鍍層的技 術方法。 本發明的另一個目的是提供處理基質表面的技術方法 ’不需對基質表面作個別且不同的事前處理步称以獲得基 質所需表面;換句話說,就是將實施事前處理及製成鍍層 一起(在原地)完成。 根據本發明’將來自三個不同雷射的三個不同雷射光 -22 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐) ----- Ϊ —I— I. - In n u Λ /Ά .11 - I -I- --Γ 4 *τ ί (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 A 7 B7 ---- --------------------- * ~ 五、發明説明(7) THALER討論了與碳盤化合物氣體或蒸氣混合的"啟爆 物"的使用者。此啟爆物最好為可強力吸收所用之雷射脈 波之輸出波長化合物。C〇2雷射的輸出波長為10.6" m,而 六氟化硫(SFe)為高效能之啟爆物,當使用此種雷射時, 一起爆便可提供硫與氟的離子以及離予基。此啟爆物可小 量的儲積所供施用的(雷射脈波)能量,釋放相同的爆炸力 ,碎裂碳氫化合物為高度反衝離子及離予基,並將高轉移 能量傳給所形成的氣體。經由這些爆裂所產生的鍍層將具 有金剛石與碳氟化合物兩者的特性。 USP 4,948,629( "HACKER" ; 8 / 9 〇j_427/53.1 ),名稱 為”金剛石薄膜的沈積",其中提示了在400Ϊ:以下(最好是 小於150°C )的溫度中在基質上沈積金剛石薄膜的方法,此 方法是使用一高功率脈波雷射以及脂肪質羧基酸或芳香族 羧基甘的蒸氣之化學蒸氣沈積法。此製程必須使用高電力 之脈波雷射,如激態原子(excimer)雷射或Nd:YAG雷射0 較佳的激態原子雷射波長包括220nm的KrCl,248nm的KrF, 308nm的XeCl,及35mn的XeF ;而較佳的Nd : YAG波長包括266nm 的第四譜波以及355nm的第三諧波。 HACKER討論了使用較長波長(>400nm)的第二雷射(如 :532nm之Nd:YAG的第二諧波),以選擇性地去除SP碳並沈 積更純淨的金剛石薄膜。其中一個例子是以有機先驅體( 丙二酸或苯均四酸酐,以氦為緩衝氣體)之光離解的248nm 雷射光束(KrF激態原子雷射)來啟始此金剛石沈積,接著 使用532的雷射光束(第二諧波Nd:YAG )以光燒蝕薄膜中所 本纸張尺度適用中國國家標準(CNS ) Α4規格(210X297公釐) I.:---1---裝-----丨訂 (請先閱讀背面之注意事項再填寫本頁) ___ς爻年1v曰/__DLC, Nitrided Nitrile (CBN), B * C, SiC, TiC, Cr3C2, TiN, TiB2, Si 3N 4 and cCN, sharp, carbide, post-titanium titanium, broken inscription, etc. Another object of the present invention It is a technical method to provide a "designer" mirror layer on a substrate. Another object of the present invention is to provide a system in which useful metals, ceramics, and composite parts can be produced in the final state without the need for any post-processing (outside the system environment) finishing and enhanced physical properties. It is brought about by the present enhanced fortified compound that cannot be manufactured by other currently known devices. Another object of the present invention is to provide a technical method for pre-treating (preparing) a substrate to facilitate plating after the processing by the present invention or existing techniques. Another object of the present invention is to provide a technical method for treating the surface of a substrate. 'It is not necessary to perform separate and different pre-treatment steps on the surface of the substrate to obtain the required surface of the substrate. (In situ) done. According to the present invention 'will be three different laser light from three different lasers-22-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ----- Ϊ —I— I. -In nu Λ / Ά .11-I -I- --Γ 4 * τ ί (Please read the notes on the back before filling out this page) Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A 7 B7 ---- --------------------- * ~ V. Description of the invention (7) THALER discusses " Initiator " mixed with carbon disk compound gas or vapor user. The detonator is preferably an output wavelength compound capable of strongly absorbing the laser pulse used. The output wavelength of Co2 laser is 10.6 " m, and sulfur hexafluoride (SFe) is a high-efficiency detonator. When this laser is used, it can provide sulfur and fluorine ions and ionization when exploded together. Yoki. This detonator can store a small amount of (laser pulse) energy for application and release the same explosive force. The fragmented hydrocarbons are highly recoiled ions and radicals, and transfer high transfer energy to the Formed gas. The coatings produced by these bursts will have the characteristics of both diamond and fluorocarbons. USP 4,948,629 (" HACKER "; 8 / 9〇j_427 / 53.1), entitled "Deposition of Diamond Films", which suggests deposition on substrates at temperatures below 400 ° C (preferably less than 150 ° C) Diamond thin film method. This method uses a high-power pulse laser and a chemical vapor deposition method of fatty carboxylic acid or aromatic carboxylic acid vapor. This process must use a high-power pulse laser, such as an excited atom. (Excimer) laser or Nd: YAG laser 0 The preferred excimer laser wavelengths include KrCl at 220nm, KrF at 248nm, XeCl at 308nm, and XeF at 35mn; and the preferred Nd: YAG wavelength includes 266nm. The fourth spectral wave and the third harmonic at 355nm. HACKER discussed the use of a second laser with a longer wavelength (> 400nm) (eg, the second harmonic of Nd: YAG at 532nm) to selectively remove SP Carbon and deposit a more pure diamond film. One example is a 248nm laser beam (KrF excited-state laser) dissociated by the photodissociation of an organic precursor (malonate or pyromellitic anhydride, using helium as a buffer gas). Start this diamond deposition, then use 532 Laser beam (second harmonic Nd: YAG) is ablated to the paper size in the film. The Chinese National Standard (CNS) A4 specification (210X297 mm) I .: -------- ---- 丨 Order (Please read the notes on the back before filling in this page) ___ ς 爻 年 1vv / __

五、發明説明(22) I——^——一J 束的能量照射在基質表面上來處理基質表面。控制這三個 雷射的製法參數及交互作用,以在基質表面上及/或下達 成所需的效果。此製法參數包括: •每個雷射的波長; •操作模式(如:脈波、超脈波或連續波),包括: 每個雷射的脈波寬度及頻率; •每個雷射的輸出功率; •每個雷射的能量; •每個雷射光束在基質表面上的入射角; •每個雷射光束之橫斷面區域形狀以及大小;以及 •在基質表面上照射雷射光束的順序(時間關係)。 譬如說,沈積在基質副表面區域之一個或以上的組成 (天然)元素可以一種或多種流動速率,並且朝著基質表 面移動,以產生副表面區域上一種或以上的組成分(組成 元素的濃度梯度。再者,組成元素之所選部分的選取量可 在控制方式下分開並蒸發。基質之一個或以上的組成元素 可視為製法中材料的"主要”來源。 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 根據本發明,已蒸發之一種或以上的組成元素在基質 表面上立刻作用,以改進蒸發之一種或以上的組成元素的 物理結構及特性,藉以產生可接著擴散回歸基質的複合材 料0 在製程中的某一個時刻,也許是製程一開始時,可將 包含副元素之一個或以上的副來源置入立刻在基質表面上 作用的反應系統。譬如說,在基質中的碳可流動、蒸發及 -23 - 本紙張尺度逋用中國國家標準(CNS ) Α4規格(210Χ297公釐) A7 B7 五、發明説明(。) 〇 含有非金剛石雜物。儘管藉由雷射的使用來擴大CVD方法 ,HACKER仍受限於前述CVr)方法原有的限制(如:基質的 預熱,有限的基質大小)。 USP 4,954,365("NEIFIELD" ; 9/90 : 437/53.1),名 稱為”金剛石薄膜的製備方法",文中提到了將基質浸入含 碳及氫的液體中,再使基質照射至少一個雷射脈波以製成 金剛石薄膜的方法。舉例言,將矽基質浸入甲基液體中, 其容器中有一石英窗,可容許雷射光射入。波長 248nm 9 脈波期間約2 0個亳微秒的激態原子雷射.脈波會被此碎基質 攔截。此基質因吸收雷射光而變熱。此甲基液與受熱基質 接觸而熱解。接著,自甲基液中熱解的碳物質會在基質上 成長,而高密度氫與不具金剛石鍵的碳起反應作用並自基 質上去除。反覆使用此雷射脈波會使金剛石膜在基質上持 績成長。NEIFIELD要求基質須為可吸收雷射光者,如前述 的矽基質。 經濟部中央標準局員工消費合作社印製 —ill·—ή.' 装-----—訂 (請先閲讀背面之注意事項再填寫本頁) USP 5,290,368( "GAYIGAN,f ; 3/94 ; 148/212),名稱 為"以雷射光束在鈦表面製成無裂紋滲氪硬化表面之方法” ,文中提出了先預熱鈦基質(使用熔爐提高基質的溫度至 華氏1000〜12〇〇度),用雷射(如:在電力功率範圍3.1KW 至3.6KW下操作的5KW,C02, 連續波雷射)熔化基質的一小 塊區域,並以氣體混合物(包含了至少7〇%但不超過85% 容量的氪,其餘為不會和熔化的鈦起反應的一種或多種氣 體)°GAVIGAN討論及其它雷射的使用,包括連續波YAG雷 射,及脈衝C〇2,YAG或激態原子雷射。一般來說’當雷射 本紙張尺度適用中國國家標準(CNS ) Α4規格(210X297公釐) 五、發明説明( ss.it 5 Λ- Β: 經濟部中央楯準局貝工消費合作社印製 24 及光學可經由配置來達成任何時刻任何所需的 在本發明的典型實施例中:--三個雷射中的第一個為紫外線雷射,例如 態原子雷射’在192 nm ’ 248nm,或308nm下操作,輪ψ 率為數十百(0-200)瓦特(W)數,一個脈波能量最H功 500 mJ (千分之一焦耳),一個脈波長度最多為26如奎 微秒),重複率最高為300Hz (赫茲); .三個雷射中的第二個為NdL.YAG雷射,在K〇6微米連 續波(CW)或突發模式或是Q-交換下操作,操作之輪出~ 功率為上百(0-1500)瓦特,脈波能量最多到15〇 j(焦耳 ),脈波頻率最高為1000Hz,脈波長度最長為2〇毫秒^邮) ,且(在脈波/突發模式下)脈波流期間最長為5秒;S •三個雷射中的第三個為CO雷射,在波長為10 6微 米下操作,輸出功率為500-1000W,脈波頻率最高為25Khz ,一個脈波最多為25微秒,超脈波頻率最高為20Khz,超 脈波寬度最多為500微秒。 在本發明基質處理技術方法中的典型應用中: •此基質為碳鋼; •組成元素為碳; •副元素也可為碳,這是由處理,所需鍍層厚度, 以及此基質是否為高碳鋼或低碳鋼來決定; •所得的造材區深度"d"大約為1.0mm (包括大約為 0.25_的副造材區);以及 •所得的金剛石鍍層厚度大約為3mm (或大約為造 25 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁) ------------1T------ m I. I ,1:1 m ·5. Description of the invention (22) I —— ^ —— A J beam of energy is irradiated on the surface of the substrate to treat the surface of the substrate. Control these three laser process parameters and interactions to achieve the desired effect on and / or on the surface of the substrate. The parameters of this manufacturing method include: • the wavelength of each laser; • the operating mode (such as: pulse, super pulse or continuous wave), including: the pulse width and frequency of each laser; • the output of each laser Power; • the energy of each laser; • the angle of incidence of each laser beam on the substrate surface; • the shape and size of the cross-sectional area of each laser beam; and Sequence (time relationship). For example, one or more constituent (natural) elements deposited on the sub-surface area of the substrate may move at one or more flow rates toward the surface of the substrate to produce one or more constituents (concentration of constituent elements) on the sub-surface area. Gradient. In addition, the selected amount of selected elements of the constituent elements can be separated and evaporated in a controlled manner. One or more constituent elements of the matrix can be regarded as the "main" source of materials in the manufacturing method. Staff Consumption of the Central Standards Bureau of the Ministry of Economic Affairs Printed by a cooperative (please read the notes on the back before filling this page) According to the present invention, one or more constituent elements that have evaporated have an immediate effect on the surface of the substrate to improve the physical structure and Properties to produce a composite that can then diffuse back into the matrix. 0 At some point in the process, perhaps at the beginning of the process, one or more secondary sources containing secondary elements can be placed in the reaction that acts immediately on the substrate surface. System, for example, carbon in the matrix can flow, evaporate, and -23-paper size 逋Use Chinese National Standard (CNS) A4 specification (210 × 297 mm) A7 B7 V. Description of invention (.) 〇 Contains non-diamond impurities. Although the CVD method is expanded by the use of laser, HACKER is still limited by the aforementioned CVr) The original limitations of the method (eg, preheating of the substrate, limited substrate size). USP 4,954,365 (" NEIFIELD "; 9/90: 437 / 53.1), named "Method for the preparation of diamond thin films", is mentioned in the article A method for immersing a substrate in a liquid containing carbon and hydrogen, and irradiating the substrate with at least one laser pulse wave to form a diamond film. For example, when a silicon substrate is immersed in a methyl liquid, the container has a quartz window to allow laser light to enter. Wavelength 248nm 9 Excited atomic lasers of about 20 亳 microseconds during pulse waves. Pulse waves are intercepted by this broken matrix. This matrix becomes heated by absorbing laser light. This methyl liquid is pyrolyzed by contact with a heated substrate. Subsequently, the carbon material pyrolyzed from the methyl solution will grow on the substrate, and the high-density hydrogen reacts with carbon without diamond bonds and is removed from the substrate. Repeated use of this laser pulse will result in sustained growth of the diamond film on the substrate. NEIFIELD requires the substrate to be laser absorbing, such as the silicon substrate described above. Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs—ill · —price. 'Equipment ------- Order (please read the precautions on the back before filling out this page) USP 5,290,368 (" GAYIGAN, f; 3/94 148/212), the name of which is "Method for making crack-free hardening surface of titanium surface with laser beam". The article proposes to preheat the titanium substrate (using a furnace to increase the temperature of the substrate to 1000 ~ 12 ° F). 〇 degrees), using a laser (such as: 5KW, C02, continuous wave laser operating in the power range 3.1KW to 3.6KW) to melt a small area of the matrix, and a gas mixture (containing at least 70% But no more than 85% of plutonium, the rest is one or more gases that will not react with molten titanium) ° GAVIGAN discussion and other laser uses, including continuous wave YAG lasers, and pulses C02, YAG or Excited atomic laser. Generally speaking, when the paper size of the laser is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 5. Description of the invention (ss.it 5 Λ- Β: Central Government Standards Bureau, Ministry of Economic Affairs Industrial and consumer cooperative printing 24 and optics can be achieved through configuration In the typical embodiment of the present invention at any time and at any time:-the first of the three lasers is an ultraviolet laser, for example, the atomic laser "operates at 192 nm" at 248 nm, or 308 nm, the wheel ψ The rate is tens of hundreds (0-200) Watts (W). The energy of a pulse wave is 500 mJ (one thousandth of a joule), and the length of a pulse wave is up to 26 (e.g., picoseconds). The repetition rate is up to 300Hz (Hertz);. The second of the three lasers is NdL.YAG laser, operating in K06 micron continuous wave (CW) or burst mode or Q-switching, the output of the operation ~ power For hundreds (0-1500) watts, the pulse energy can be up to 15j (Joules), the pulse frequency can be up to 1000Hz, the pulse length can be up to 20 milliseconds, and (in pulse / burst mode) Bottom) The pulse current period is up to 5 seconds; S • The third of the three lasers is a CO laser, which operates at a wavelength of 106 μm, the output power is 500-1000W, and the pulse frequency is up to 25Khz. A pulse is at most 25 microseconds, the frequency of the super pulse is 20Khz, and the width of the super pulse is 500 microseconds at most. In typical applications: • the matrix is carbon steel; • the constituent element is carbon; • the secondary element can also be carbon, which is determined by the treatment, the required coating thickness, and whether the matrix is high carbon steel or low carbon steel; • The depth of the obtained material area " d " is approximately 1.0mm (including the auxiliary material area of approximately 0.25_); and • the thickness of the obtained diamond coating is approximately 3mm (or approximately 25 paper standards are applicable to the country of China) Standard (CNS) A4 specification (210X297 mm) (Please read the notes on the back before filling this page) ------------ 1T ------ m I. I, 1: 1 m

I kHgi 經濟部中央標準局負工消費合作社印製 88.lt δ 五、發明説明() 9 掃過基質表面時,由於未溶化基質的熱吸收,所以不在雷 射光束下的熔化地區將會快速凝固GAVIGAN也論及此方 法對其它鈦合金也有效,這些鈦合金在其成分中含有其它 強氮化物形成物,例如:鈒、何、碳及銘。雖然文中並無 指出形成鍵層的内容,但在此善意而無成見地引述GAVIGAN 本質上是以雷射在其他材料(即,除鋼以外)上實施其它方 法(即’形成鍍層以外的方法)的典型代表。儘管其提示似 乎只限於在鈦及其合金表面上形成無裂紋滲氮硬化表面之 製法》 USP 5,236,545(”PRYOR" ; 8/93 ; 156/613 ),文中提 到的製法包括:在含氮的大氣中使用氮化六硼靶材之雷射 熔削’以在矽基質上沈積氮化立方晶硼(CBN)層來作為第 一界面層’其次是在有原子氫存在的情況下,以使用碳乾 材之雷射熔削來沈積氫终結碳的第二界面層,接著是使用 傳统化學蒸氣沈積(CVD)技法以沈積一層異質外延金剛石 膜。 USP 5,098,737("C〇LLINSM ; 3/92 ; 427/53.1)提出以 非垂直入射肖來照射雷射光束至靶材之方法。此專利在製 造似金剛石碳薄膜之研究的四個主要方法,即:離子束 沈積法,化學蒸氣沈積法,電漿強化化學蒸氣沈積法 ,喷鐘沈積法上’提供了很有用的背景資料。概括言之 ,此專利提出了在真空室中照射雷射以撞擊置於真空室令 的石墨箔製連續帶狀移動材。雷射光束是集中在勒材上 以溶削並喷出一柱礙蒸氣,藉此以使這柱竣蒸氣由雷射光 -10 - ¥紙i尺度適用中國國家標率(CNS)M規格(21〇><297公® ) ~~ ---— (請先閲讀背面之注意事項再填寫本頁)IkHgi Printed by 88.lt δ, Consumer Cooperatives, Central Standards Bureau, Ministry of Economic Affairs. 5. Description of the invention () 9 When the surface of the substrate is swept, due to the heat absorption of the undissolved substrate, the melting area that is not under the laser beam will quickly Solidified GAVIGAN also mentions that this method is also effective for other titanium alloys, which contain other strong nitride formations in their composition, such as: hafnium, Ho, carbon and Ming. Although the text does not indicate the formation of the bond layer, it is here to quote in good faith and without prejudice that GAVIGAN essentially implements other methods (ie, methods other than plating) on other materials (ie, except steel) with lasers. Typical representative. Although its hint seems to be limited to the method of forming a crack-free nitrided hardened surface on the surface of titanium and its alloys "USP 5,236,545 (" PRYOR ";8/93; 156/613), the method mentioned in the article includes: Laser melting of a hexaboron nitride target in the atmosphere 'to deposit a nitrided cubic boron (CBN) layer on a silicon substrate as the first interface layer' followed by the use of atomic hydrogen in the presence of atomic hydrogen Laser melting of carbon dry material to deposit a second interface layer of hydrogen-terminated carbon, followed by traditional chemical vapor deposition (CVD) techniques to deposit a heteroepitaxial diamond film. USP 5,098,737 ("COLLINSM; 3/92 427 / 53.1) proposes a method of irradiating a laser beam to a target with a non-normal incidence angle. The four main methods of this patent in the research of manufacturing diamond-like carbon films are: ion beam deposition, chemical vapor deposition, The plasma-enhanced chemical vapor deposition method and the clock-spray deposition method 'provide useful background information. In summary, this patent proposes irradiating a laser in a vacuum chamber to impinge on a continuous strip of graphite foil placed in a vacuum chamber. shape Moving material. The laser beam is focused on the material to dissolve and spray a column of vapor, so that the vapor of this column is completed by laser light -10-¥ paper i scale applies to China National Standards (CNS) M Specifications (21〇 > < 297Male®) ~~ ----- (Please read the precautions on the back before filling this page)

paper

ψ* D A" ΙΓ 個典型應用中’ 且所得的鍍層分 基質材料,混合 五、發明説明( 25 材區深度的三倍)。 在本發明基質處理技術方法中-的另 其組成元素為欽’副元素為氮,碳或蝴 別為氮化鈦,碳化欽或二蝴化欽。 本發明之技術方法的其他應用(即·孩 物,副來源等)均在本發明之範園及内涵内 根據本發明的特徵’照射在基質上的能量可利用來』 生(或控制)欲製作之鐘層上的物理壓力,而且,藉由书 細誘導此種壓力,可以控制(促進)結晶的生長,以有贺 增加比現有技術方法更好的生長率。 根據本發明的特徵,照射在基質上的能量可用來達读 在基質表面上形成任何想得到的構形C结構),可以做為 最後的結果(即原地事後精加工)’或是為了之後的製作 鍍層的表面準備工作(即事先處理表面> 根據本發明的特徵,副來源包括一作為副元素的摻雜 ΐί雜譬如說,金剛石或Μ鍍層可在半導體應用中被月 根據本發明的特徵,可將電力偏壓施於基質上來押 基質或已經形成之鍍層上的結晶成長方向。 二 本發明的一優點為不需在真空下執行β然而,基 的作用區域最妤以隔絕氣體(例如:氮或氬)來隔絕。 而,這並不是說此方法不必在真空下完成。此製法或^ 製程可連同現有的CVD及CVD-型方法來使用以減少 制。譬如說,不需加熱整個基質來驅動沈積反應,就^二將 26 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公釐) { Ϋ--^讀背面之洼意事項再填笃本頁)ψ * D A " In the typical application of Γ ′, and the resulting coating is divided into matrix materials, mixed with 5. Description of the invention (three times the depth of 25 material areas). In the method for processing a substrate according to the present invention, the other constituent element is chin, and the secondary element is nitrogen, carbon or butterfly is titanium nitride, carbide, or dioxin. Other applications of the technical method of the present invention (ie children, secondary sources, etc.) are within the scope and connotation of the present invention according to the feature of the present invention 'the energy irradiated on the substrate can be used to generate (or control) desire The physical pressure on the bell layer is produced, and by inducing such pressure in the book, the growth of the crystal can be controlled (promoted) to increase the growth rate better than the prior art method. According to the features of the present invention, the energy irradiated on the substrate can be used to read to form any desired configuration C structure on the surface of the substrate), which can be used as the final result (ie, after-situ finishing in situ) or for later Preparing the surface of the coating (i.e. pre-treating the surface) According to the features of the present invention, the secondary source includes a doping element as a secondary element. For example, diamond or M coatings can be used in semiconductor applications according to the features of the present invention. An electric bias can be applied to the substrate to press the substrate or the crystal growth direction on the formed coating. One advantage of the present invention is that it is not necessary to perform β under vacuum. However, the area of action of the substrate is most resistant to gas (for example, : Nitrogen or argon) to isolate. However, this does not mean that this method does not have to be completed under vacuum. This method or process can be used in conjunction with existing CVD and CVD-type methods to reduce the system. For example, it is not necessary to heat the entire Substrate to drive the deposition reaction, the paper size of 26 papers applies the Chinese National Standard (CNS) A4 specification (210 × 297 mm) {Ϋ-^ Read the meaning on the back (Fill in this page again)

經濟部中央標準局員工消費合作社印製 〇 五 、發明説明( 10 A7 B7Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs

束作部份電離 USP 5,094,915(-SUBRAMANIAM 3/92 .£28/408 )» 經濟部中央標準局員工消費合作杜印製 名稱為了由含一氧化碳之氣體混合物以雷射薄 膜的方法《,文中提出以一氧化碳雷射射光來照射含—氧 化碳之氣體,但並不以雷射射光來照射基質,以在基質上 开> 成碳薄膜的方法。 JJSP 5,080,752( "KABACOFF11 ; 1/92; 156/60^^ 出— 種方法,文中透明金剛石粉粒子是以複晶金剛石鍵結在— 起,以形成有效的金剛石結構。細緻非透明非金剛石碳粉 與透明金剛石粉的相互混合物是緊壓在一起,以形成^辟 透明石英脈管或是一複晶金剛石覆層的未成熟體,並使$ 脈衝雷射以快速熔化此一非透明非金剛石碳粉。隨後,、 冷卻此碳的熔融體,即可由金剛石粒子表面開始作異質外 延的成長,而製成與金剛石粒子鍵結在一起的複晶金剛石。 _USP 5,066,515( "OHSAWA" ; 11/91 ; 427/53^^ ^ 形成人工金剛石的方法,其中包含對玻璃狀'^照 射光束,並將雷射光束射在移動至此的玻璃狀固 上一點,以形成一局部融化的部份,接著當移開那—點 ’局部融化的每個部份就會冷卻。在局部融化部份的 期間,在已凝結之局部融化部份兩邊的鄰近區域上即^部 一人工金剛石。 乂成 USP 4,987,007( "WAGAL" ; 1/91 ; 42 7/53 出了 真空環境中,由雷射溶削柱中取出離子,以在基質上製 一層物質的方法。此裝置包括一真空室,其中包含—跑 ----------f^裝 訂 .(請先閲讀背面之注意事項再填寫本頁〕 -11 - 本紙張尺度適用中國國家標準(CNS ) A4规格(210X297公釐) 經濟部中央標準局負工消费合作社印装 m-u. s 立、發明説明() 26 能量施加(照射)於基質的所選區域上,且可以任何型態在 基質表面上掃描’以在基質上製作任何所需的“輪靡( 如:組成’厚度,形狀)或圖案。這可避免許多與加熱整 個基質有關的問題’且可提供以這些製法(不遮^基 所無法得到的結果。 本文將討論用以導入氣體形態的副元素以及導入隔絕 氣體之喷嘴的各撞設計(實施例)。 根據本發明,基質(工件)與能量來源(如··雷射)的 移動是相對的,以便於由橫跨基質表面的位置來控制造村 區的深度及基質上所製作之鍍層的厚度。 根據本發明’可藉由選擇強度,持續時間,輪廓以及 雷射光束的入射角來控制造材區的深度"d"使成為一選取 深度。 根據本發明,可控制此技術方法以在基質上製作一多 層式鍍層,其中每一層各有其所要的组成分。 根據本發明,可控制此技術方法以在基質内製造多個 造材區。 本發明優於現有鍍覆技術方法的優點,包括: •在基質選取(離散)區提供一連續作用系統; •所製作的組成可以是“真正的”異質磊晶及/或同 質磊晶;譬如說,製成的異質磊晶建構組成分可發展成同 質磊晶建構組成分(如:鍍層,或是當組成分為SP碳鍵 結之组成分時後續的鍍層本發明的方法允許材料在在 另一個底部材料上生長’而不限制其結晶方向,晶格結構 -27 - 本纸張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) (請先閱讀背面之;i意事項再填寫本頁) -3 後Isolation part ionization USP 5,094,915 (-SUBRAMANIAM 3/92. £ 28/408) »Consumers' cooperation with the Central Bureau of Standards of the Ministry of Economy Carbon monoxide laser light is used to irradiate a gas containing carbon oxide, but laser light is not used to irradiate a substrate to form a carbon thin film on the substrate. JJSP 5,080,752 ("KABACOFF11;1/92; 156/60 ^^)-a method in which transparent diamond powder particles are bonded with polycrystalline diamond to form an effective diamond structure. Fine non-transparent non-diamond carbon The mutual mixture of powder and transparent diamond powder is pressed together to form a transparent quartz vessel or an immature body coated with a polycrystalline diamond, and a pulse laser is used to quickly melt this non-transparent non-diamond Carbon powder. Then, after cooling the molten body of this carbon, the heteroepitaxial growth of the surface of the diamond particles can be started to form a polycrystalline diamond bonded with the diamond particles. _USP 5,066,515 (" OHSAWA "; 11 / 91; 427/53 ^^^ A method for forming an artificial diamond, which includes irradiating a glass-like beam with a laser beam and irradiating a laser beam onto the glass-like solid moved to form a partially melted part, and then When you move away from that point, each part of the local melting part will cool down. During the local melting part, in the vicinity of the two sides of the local melting part that has been condensed, there is only one person. Diamond. USP 4,987,007 (" WAGAL ";1/91; 42 7/53 out of a vacuum environment, the method of removing ions from the laser dissolution column to form a layer of substance on the substrate. This device includes a Vacuum chamber, which contains —run ---------- f ^ binding. (Please read the precautions on the back before filling this page] -11-This paper size applies to China National Standard (CNS) A4 specifications ( 210X297 mm) Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Consumer Cooperatives, and printed on the invention. (26) Energy is applied (irradiated) on selected areas of the substrate, and can be scanned on the surface of the substrate in any form. Make any desired "round (such as: composition, thickness, shape) or pattern on the substrate. This can avoid many problems related to heating the entire substrate" and can provide these methods (which cannot be obtained without covering the substrate) Results. This article will discuss the design of the collisions (introduction) to introduce secondary elements in the form of gas and nozzles to isolate the gas. According to the present invention, the movement of the substrate (workpiece) and the energy source (such as laser) is in phase. In order to control the depth of the village area and the thickness of the coating made on the substrate by the position across the substrate surface. According to the present invention, the intensity, duration, profile, and incident angle of the laser beam can be selected. Controlling the depth of the material area " d " makes it a selected depth. According to the present invention, this technical method can be controlled to make a multilayer coating on a substrate, where each layer has its own desired composition. According to the present invention This technical method can be controlled to make multiple fabrication areas in the matrix. Advantages of the present invention over existing plating techniques include: • Providing a continuous action system in the matrix selection (discrete) region; • The composition produced can be "real" heteroepitaxial and / or homogeneous epitaxy; for example In other words, the heterogeneous epitaxial structure composition can be developed into a homogeneous epitaxial structure composition (such as: plating, or subsequent plating when the composition is divided into SP carbon bond composition). The method of the present invention allows materials to be used in Grow on another bottom material 'without limiting its crystallographic direction, lattice structure-27-This paper size applies Chinese National Standard (CNS) A4 specification (210X 297 mm) (Fill in this page)-After 3

J A7 B7 五、發明説明(U) 及對焦在靶材上以熔削此物質並電離部份熔削柱的雷射, 此裝置很適合在一乾淨之未播灑矽基質上形成似金剛石之 碳薄膜。此一製程可製造一 DLC層,其厚度相當一致,變 化量小於3 %,速率為每小時20//m。此製法包括集中雷 射光束射在靶材上,熔削部份靶材以噴出靶材物質的電漿 ,並以雷射來電離部份電漿,再定位基質的位置以收集離 子來形成基質上的一廣物質。 USP 4 , 986,214( "ZUMOTO" ; 1/91 ; 118/722)提出一可 形成薄金剛石膜的薄膜形成裝置。此製法為一雷射CVD方 法,其中薄膜形成氣體的光學分解是藉由紫外線雷射光束 所釋出的高能量光子所完成的。 USP 4 , 874,596( "LEMELSON" ; 10/89 ; 423/446 )提出 了以強烈放射光束來照射容有作反應用的小量物質之凹洞 的方法。二道或以上的諸如由一個或更多雷射或電子槍所 產生的強烈放射光束由反向照射於物質的粒子或塊狀物, 以造成震盪波而震碎塊狀物質,並將它轉換成另一種形態 。此塊狀物或粒子也可能包括碳。此碳由強烈的熱量及震 盪波的震力而轉換成金剛石。 ^^_裝 訂 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 -12 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) sail. 5 扪 五、發明説明( 經濟部中央標準局員工消費合作社印製 29 本發明的技術方法可用來處理基質,以及在基質上作 任何材料之鑛層。 ; 本發明的技術方法可用來處理任何大小或形狀的基質 ’如:大的平坦片狀,大的成形片,活塞環,氣缸套,喷 霧嘴,長圓筒型元件的内壁,閥座等等。 本發明的技術方法可用來處理任何材料組成的基質, 包括超導(電)體材料。 本發明的方法為真正的異質磊晶,可允許在基質表面 或先已形成之鍍層上向任何方向上製作鍍層,包括"£;,_形 狀的鍍層以及先垂直後平行延伸於基質表面的鍍層結構β 本發明的技術方法可在基質表面下製造一造材區,且 此造材區可作用為基質上製作之強化擴散鍵結鍍層的支禮。 比起在基質表面上形成鍛層如:金剛石鍵唐的方法, 本發明的技術方法可以習用被覆方法所無法達成的速率及 厚度來形成鐘層。譬如說,可以超過每小時l〇Q^m的速率 來製作,包括超過每分鐘1腿’每分鐘3咖及每分鐘1〇腿 。也可製作最終厚度(〇超過100总m的鍍層,包括超過 1 nun,3 mm 及 1〇 mm。 相對於處理基質以形成合成物質的造材區而古,本發 明的技術方法可以每小時30#m的速率及深度來&成此一 造材區,包括超過每分鐘0.5 mm,每分鐘lfflm及每分鐘3咖 。也可製作最終深度(d)超過30—的造材區,包括超過 0 · 5mm,1 mm 及 3 咖。 本發明的方法為連續的,克服了習知製法中以批次處 30 本紙張尺度適用中國國家標準(CNS ) M規格(21〇χ297公釐) (請-聞讀背面之注意事項再填寫太頁) 、-& 12 五、發明説明( USF 4,849,199 ( ^ΡΙΝΝΕΟ^ ; 7/89; 423/446)提出 了在碳的低壓沈積以形成金鋼石之期間,抑制石墨及其它 非金剛石碳類的成長。此石墨及其它非金剛石碳類是使用 足以蒸發石墨但不足以損壞基質的入射放射能量來蒸發的 。石墨及其它非金剛石碳類之成長是在金剛石沉積期間, 將成長表面曝露於足以行選擇性光分解以在成長金剛石表 面上形成非金剛石碳一碳鍵結的波長之入射放射能量的方 式來抑制的。如本專利所述,所有用以合成金剛石的高壓 製法都會有石墨成長的問题,此問題最後會導致金剛石停 止成長。在本專利中提到了一種低壓的製法,其中石墨及 其它非金剛石碳類之成長是藉由蒸發或選擇性光分解的方 式來抑制的。在本專利所提到的一種方法中,石墨或其它 非金剛石碳類是使用足以蒸發石墨但不足以損壞基質^入 射放射能量來蒸發的。在本專利所提到的另—個方法中, 石墨或其它非金剛石碳類是經由選擇性地光分解,例如, 藉由使用適當波長之雷射能量進行的。本專利的方法須有 一碳來源氣體,以使電漿強化化學蒸氣沈積方法> 可在籽晶上產生金剛石。當石墨及其它非金剛石碳類在金 剛石成長表面上形成時,使用雷射將它們蒸發掉,需注素 雷射的能量必須夠小,以避免對基質造成物理或化學 ,特別是當基質不為金剛石籽晶時。本專利中還建議以 密集中之光束來掃描整個面積的方式,來控制大金剛石妹 晶或基質區上之石墨的成長。 ° _usp 4,522,680 ( "oGAWA " ; 1/85 ; 156/^9.、中提 13 本紙張尺度適用中國國家標準(CNS )八4驗(210x297公酱了 五、發明説明( 30J A7 B7 V. Description of the invention (U) and laser focused on the target to melt the material and ionize part of the melting column. This device is very suitable for forming diamond-like on a clean unspread silicon substrate. Carbon film. This process can produce a DLC layer with a fairly uniform thickness, less than 3% change, and a rate of 20 // m per hour. The manufacturing method includes concentrating a laser beam on a target, melting a part of the target to eject a plasma of the target material, and using a laser to ionize a part of the plasma, and then relocating the position of the substrate to collect ions to form the substrate. A wide range of materials. USP 4,986,214 (" ZUMOTO ";1/91; 118/722) proposes a thin film forming apparatus capable of forming a thin diamond film. This manufacturing method is a laser CVD method, in which the optical decomposition of the thin film-forming gas is performed by high-energy photons released by an ultraviolet laser beam. USP 4, 874,596 (" LEMELSON ";10/89; 423/446) proposes a method of irradiating a cavity containing a small amount of substance for reaction with a strong radiation beam. Two or more intense beams of radiation, such as those generated by one or more lasers or electron guns, are irradiated by particles or lumps of matter in the opposite direction, causing shock waves to shatter the lumpy matter and convert it into Another form. This mass or particle may also include carbon. This carbon is converted into diamond by strong heat and the oscillating force of the oscillating wave. ^^ _ Binding (please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs -12-This paper size applies to the Chinese National Standard (CNS) A4 (210X 297 mm) sail. 5 25. Description of the invention (Printed by the Consumer Cooperatives of the Central Standards Bureau, Ministry of Economic Affairs 29 The technical method of the present invention can be used to treat substrates, and to make mineral layers of any material on the substrate.; The technical method of the present invention can be used to process any size Or shaped substrates such as: large flat flakes, large shaped pieces, piston rings, cylinder liners, spray nozzles, inner walls of long cylindrical elements, valve seats, etc. The technical method of the present invention can be used to process any material The composition of the substrate, including superconducting (electric) body material. The method of the present invention is a true heteroepitaxial crystal, which allows the coating to be made in any direction on the surface of the substrate or on the previously formed coating, including "£;, _ Shaped plating layer and plating structure extending vertically and then parallel to the surface of the substrate β The technical method of the present invention can manufacture a material area under the surface of the substrate, and the material area It can be used as a gift to strengthen the diffusion bond plating layer made on the substrate. Compared with the method of forming a forged layer on the surface of the substrate, such as a diamond bond, the technical method of the present invention can be used at a rate and thickness that cannot be achieved by the coating method. The bell layer is formed. For example, it can be produced at a rate of more than 10Q ^ m per hour, including more than 1 leg per minute, 3 coffee per minute, and 10 legs per minute. The final thickness (0 more than 100 total m The plating layer includes more than 1 nun, 3 mm, and 10 mm. Compared with the processing of the substrate to form a synthetic material production area, the technical method of the present invention can achieve the rate and depth of 30 #m per hour. A production area, including more than 0.5 mm per minute, lfflm per minute, and 3 coffee per minute. It can also produce production areas with a final depth (d) of more than 30—including more than 0.5 mm, 1 mm, and 3 coffee. The method of the invention is continuous, and it overcomes the conventional paper making method in which 30 papers are processed in batches. The Chinese National Standard (CNS) M specification (21〇297 mm) is applied. ),-&Amp; 12 V. Invention The description (USF 4,849,199 (^ ΡΙΝΝΕΟ ^; 7/89; 423/446) proposes to inhibit the growth of graphite and other non-diamond carbons during the low-pressure deposition of carbon to form diamonds. This graphite and other non-diamond carbons Classes are vaporized using incident radiant energy sufficient to evaporate graphite but not enough to damage the substrate. The growth of graphite and other non-diamond carbon classes is during the deposition of diamonds, exposing the growing surface to selective photodecomposition to grow the diamond surface. The formation of non-diamond carbon-carbon bonding at a wavelength of incident radiation energy is suppressed. As described in this patent, all high pressure manufacturing methods used to synthesize diamond will have the problem of graphite growth, which will eventually cause the diamond to stop growing. . A low-pressure manufacturing method is mentioned in this patent, in which the growth of graphite and other non-diamond carbons is suppressed by evaporation or selective photolysis. In one of the methods mentioned in this patent, graphite or other non-diamond carbons are evaporated using sufficient radiation energy to evaporate graphite but not enough to damage the substrate. In another method mentioned in this patent, graphite or other non-diamond carbons are subjected to selective photodecomposition, for example, by using laser energy of an appropriate wavelength. The method of this patent requires a carbon source gas so that the plasma enhanced chemical vapor deposition method > can produce diamond on the seed crystal. When graphite and other non-diamond carbons are formed on the surface of diamond growth, use laser to evaporate them. The energy of the laser must be small enough to avoid physical or chemical damage to the substrate, especially when the substrate is not Diamond seed. The patent also proposes to control the growth of graphite on large diamond crystals or matrix regions by scanning the entire area with a dense beam of light. ° _usp 4,522,680 (" oGAWA ";1/85; 156 / ^ 9. 、 Central 13

琿的限制》以本發明的技術方法可成功的處理維度 6吋的基質,包括超過8吋,超過1〇吋,超過3 超過100吋的。 ^ ^ 理基質以防止受賴,侵鱗 ,並可在整個基質或部分地區上製造一化學惰性表面。 本發明之低溫(不項先加熱)技術方法的優點為基質 可在處理過程中保有維度的穩定性,且不會喪失其底部的 硬度(如:鋼的彈性)〇 、 一般來說,金剛石或似金剛石碳鍍層(以及其他材料 的鍍層)可在基質上形成,而不須增加基質内原有材料( 如:碳成分元素)以外的材料》所形成的鍍層不只存在基 質表面上,也存在基質表面下,且其特性是依鍍層及基質 之間所形成的擴散鍵結而定。此製法也可用來形成一金剛 石鍍層’ DLC鍍層,或另一種結晶材料鍍層。此製法是唯 一可在周遭壓力下完成,而不須真空或高壓》此外’此製 法也可在不加熱基質的情況下完成。 本發明的表面處理技術方法可用來處理任何基質,包 括金屬及非金屬基質(非金屬基質包括陶瓷及聚合體基質 )。特殊材料也可處理或導入反應係統中,其中包括*但 不受限於: 經濟部中央樣準局員工消費合作社印裝 •金屬(Β,AL,Ti,Nb, Ta,Cr,Mo, W,Re 等); •石墨及碳化物(C,B4C,SiC, TiC,Cr3C2,WC,碳化 鈮,碳化給等); •氮化物(BN,TiN,TaN,Si3N4,氮化铪,氮化鋁等); 31 本紙張尺度適用中國國家標準(CNS ) A4规格(210X297公釐) 五、發明説明( 13 A7 B7 出了製造金剛石結晶的方法,包括提供〜 晶化之啟始材料原子核的抗壓物體。此原^有將於内部結 可穿透抗壓物質並可被啟始材科所吸收的核經施以具有 此能量加熱及熔解後,將熔解物在壓力下=量,原子核藉 =成結晶。雷射光朿或高頻錢.加熱故 USP 5,176,788 ( “KABACOFF” ; i/q.. 、 名稱石i構的雷 射光來將金剛石結構連結在一起。此一方法包括在欲連結 的兩個金剛石間形成一不透明的非金鋼石材料層,將各金 剛石表面壓在一起,使用脈衝雷射光在大量熱量透過金剛 石表面耗失之前快速的將所有不透明非金剛石碳材料熔化 ’接著,使溶化的碳冷卻並凝結成為由金剛石表面成長的 同質外延的複晶金剛石,並將這些表面鍵結在一起。 427/34 )名稱 USP 4,892.751 ( ‘‘MIYAKE’’ 1/90 t1)—裝-----j.^ /fcv / ' (請先閎讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 為“形成薄膜的方法與裝置”,其中所提到的技巧當中, 以高輸出功率雷射(如:KrF激態原子)光束來照射氣體 以分離氣體之凝結層的氣體,並局部產生電漿,而上述氣 體中包含用來構成所望之薄膜的元素,以作為此氣體之濃 縮凝固層的部份構成元素;並以電漿所產生的無功分子來 照射基質,以獲得半導體元件中所採用的高精度高品質薄 鍺(Ge )膜。*ΜΙγΑκΕ案中,配置紗基質(1〇}以使其表 面(平面)與雷射光束的光學路徑平行。加熱基質的加熱 器是在基質的底部,以維持基質的溫度在4〇〇。(:,如同CVD 法一樣。一般而言,雷射是用來製造電漿,但不會對基質 -14 - 本紙張尺度適用中國國家檩準(CNS ) A4规格(210X297公釐) 經濟部中央標準局負工消費合作社印製 88,1L' δ 五、發明説明() 31 •硼及硼化物(B,TaB,TiB,WB,FeB,NiB 等); •矽及矽化物(Si,.及Mo, Fb,Ni等的不同矽化物); •氧化物(AL2〇3,SiO,Si〇s等);以及 •有機混合物(PTFE, Kevlar, Polymides,液態結晶 複合體,Polyethyltetrathalate 等)〇 根據本發明的特徵,基質可以用一個雷射預先處理( 以便於後績之鍍層製作)。譬如說,將激態原子雷射的光 束照射在破化鎢基質表面上,以去除研磨的痕跡及污染物 ,並去除基質表面上的銘。基質上其它冶金學上的改變可 在此一事先處理過程中輕易地完成,例如:將反應氣體加 入以改變表面的化學性質。 根據本發明的特徵,本發明的技術方法可用來快速成 型一個物體。一般來說,三維物體是以一連串已製作的鍍 層來“建造”的。 本發明的其他目的,特徵及優點可由下文中的說明得 知0 【圖式簡單說明】 本文中所附的圖示是用來說明並描述本發明之實施例 ,以解釋本發明的原理: 圖1為描述本發明技術方法的製法流程圖。 圖2A是以本發明之技術方法所處理(鍵覆)之基 質的部分橫斷面圖,其中特別描述了基質内之主要及副造 材區的形成。 圖2B是以本發明之方法所處理(鍍覆)之基質的部分 -32 - )( 210X297公釐) (-..-閱讀背面之:,±意事項再填芎本頁)限制 Limitations》 The technology of the present invention can successfully process substrates with dimensions of 6 inches, including more than 8 inches, more than 10 inches, and more than 3 more than 100 inches. ^ ^ Substrates can be protected from intrusion, scaling, and a chemically inert surface can be made on the entire substrate or part of the area. The advantage of the low temperature (not first heating) technical method of the present invention is that the substrate can maintain dimensional stability during processing without losing the hardness of its bottom (such as the elasticity of steel). Generally, diamond or Diamond-like carbon coatings (and coatings of other materials) can be formed on the substrate without adding materials other than the original materials (such as carbon components) in the substrate. The coating formed on the substrate is not only on the substrate surface, but also on the substrate surface. And its characteristics depend on the diffusion bond formed between the plating layer and the substrate. This method can also be used to form a diamond-plated layer 'DLC coating, or another crystalline material coating. This method is the only method that can be performed under ambient pressure, without the need for vacuum or high pressure. In addition, 'this method can also be performed without heating the substrate. The surface treatment method of the present invention can be used to treat any substrate, including metal and non-metal substrates (non-metal substrates include ceramic and polymer substrates). Special materials can also be processed or introduced into the reaction system, including * but not limited to: printed by consumers' cooperatives of the Central Prototype Bureau of the Ministry of Economic Affairs • Metals (B, AL, Ti, Nb, Ta, Cr, Mo, W, Re, etc.); • Graphite and carbides (C, B4C, SiC, TiC, Cr3C2, WC, niobium carbide, carbonized, etc.); • Nitrides (BN, TiN, TaN, Si3N4, hafnium nitride, aluminum nitride, etc.) ); 31 This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) V. Description of the invention (13 A7 B7) The method for manufacturing diamond crystals is provided, which includes providing ~ the pressure-resistant material of the crystallization starting material atomic nucleus This element has a core that can penetrate the pressure-resistant substance in the internal junction and can be absorbed by the starting material family. After heating and melting with this energy, the melt is put under pressure = quantity, and the atomic nucleus is borrowed = Crystals. Laser light or high-frequency money. Heating USP 5,176,788 ("KABACOFF"; i / q .., the name of the laser structure of stone i) to connect the diamond structure together. This method includes two An opaque layer of non-diamond material is formed between the diamonds. The diamond surfaces are pressed together, and pulsed laser light is used to quickly melt all opaque non-diamond carbon materials before a large amount of heat is lost through the diamond surface. Then, the dissolved carbon is cooled and condensed into a homoepitaxial complex crystal growing from the diamond surface. Diamond and bond these surfaces together. 427/34) Name USP 4,892.751 (`` MIYAKE '' 1/90 t1) —Packing ----- j. ^ / Fcv / '(Please read the first Please fill in this page again.) Printed as “Methods and Devices for Forming Thin Films” by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. Among the techniques mentioned, laser beams with high output power (such as KrF excitatory atoms) are used. To irradiate the gas to separate the gas from the condensation layer of the gas and locally generate a plasma, and the above gas contains the elements used to form the desired film as a part of the concentrated solidification layer of the gas; and the plasma The generated reactive molecules are used to irradiate the substrate to obtain a high-precision, high-quality thin germanium (Ge) film used in semiconductor devices. In the case of * ΜΙγΑκΕ, a yarn substrate (1 } So that its surface (plane) is parallel to the optical path of the laser beam. The heater that heats the substrate is at the bottom of the substrate to maintain the temperature of the substrate at 400. (: Like the CVD method. In general, Laser is used to make plasma, but it will not be used for substrate -14-This paper size is applicable to China National Standard (CNS) A4 (210X297 mm) Printed by the Consumers Cooperative of Central Standards Bureau of the Ministry of Economic Affairs 88,1L ' δ V. Description of the invention (31) • Boron and boride (B, TaB, TiB, WB, FeB, NiB, etc.); • Silicon and silicide (different silicides of Si, .. and Mo, Fb, Ni, etc.); • oxides (AL203, SiO, SiOs, etc.); and • organic mixtures (PTFE, Kevlar, Polymides, liquid crystal composites, Polyethyltetrathalate, etc.). According to the features of the present invention, the substrate can be pretreated with a laser. (In order to facilitate the production of plating afterwards). For example, the laser beam of an excimer atom is irradiated on the surface of the broken tungsten substrate to remove grinding marks and contaminants, and to remove the inscription on the surface of the substrate. Other metallurgical changes on the substrate can be easily performed during this prior processing, such as adding reactive gases to change the surface chemistry. According to the features of the present invention, the technical method of the present invention can be used to quickly form an object. Generally, three-dimensional objects are "built" with a series of fabricated coatings. Other objects, features, and advantages of the present invention can be learned from the following description. [Simplified description of the drawings] The accompanying drawings are used to illustrate and describe the embodiments of the present invention to explain the principles of the present invention: 1 is a process flow chart describing the technical method of the present invention. Fig. 2A is a partial cross-sectional view of a substrate treated (bonded) by the technical method of the present invention, in which the formation of main and auxiliary material regions in the substrate is specifically described. Figure 2B is the part of the substrate treated (plated) by the method of the invention

五、發明説明(14) 發生作用。 、_Hp 4,681,640 ( “STANLEY” ; 7/87 ; 148/1.5 )名 稱為‘錄與摻雜鍺薄膜的雷射底應化學蒸氣沈積法,,,其 中k到使用可調整之連續波C02雷射來形成錄與摻雜錯複 晶薄膜,此雷射可在10.4或9·4 " m2的範圍中傳送紅外線 雷射放射光,以執行光分解之雷射感應化學蒸氣沈積。一 啟始材料,如:四甲基鍺(TMG),具有高蒸氣壓且不具有 與C02雷射輸出共振的振動頻率,可在有“增敏劑,,時使 用(“增敏劑”為一種可吸收雷射能量且接著與傳輸至TMG 的能量反作用的物質)。 一㈣ 5,080,753( “DOLL” ; 1/92 ; 156/609 ),名稱 為結晶碳化硼薄膜的雷射沈積”,其中使用KrF激態原 子雷射來熔削碳化硼靶材,並會使得碳化硼在單結晶矽基 質上沈積,而此一基質已事先預熱到大約4〇〇 〇c,並在熔 削及沈積過程中’維持在此溫度。在D〇ll案中,雷射不會 直接在基質上作用。 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 訂 USP 5,096,740( “NAKAGAMA” ; 5/92 ; 427/53,1 ) > 名稱為‘‘以雷射沈積來製造氪化三硼薄膜的方法”,其中 提到在包含原子(也可以是氮原子)的把材上照射一激 態原子雷射,並在面對靶材之基質上沈積氪化三硼。在 NAKAGAMA案中,雷射不會直接在基質上作用。一般來說, 成長CBN (氪化三硼)的基質須限定為矽。V. Description of the Invention (14) Works. _Hp 4,681,640 ("STANLEY"; 7/87; 148 / 1.5) The laser beam should be chemical vapor deposition method with the name of "recorded and doped germanium thin film", where k to the use of adjustable continuous wave C02 laser to Forming a doped and complex crystal film, this laser can transmit infrared laser radiation in the range of 10.4 or 9.4 " m2 to perform laser-induced chemical vapor deposition of photodecomposition. A starting material, such as: Tetramethylgermanium (TMG), has a high vapor pressure and does not have a vibration frequency that is resonant with the C02 laser output. It can be used when a "sensitizer," ("sensitizer" is A substance that absorbs laser energy and then reacts with the energy transmitted to TMG). A stack of 5,080,753 ("DOLL"; 1/92; 156/609), named "Laser Deposits of Crystalline Boron Carbide Films," in which KrF excitable atomic laser is used to melt boron carbide target material, and it will cause boron carbide to be deposited on the single crystal silicon substrate. This substrate has been preheated to about 4000c in advance, and is melted and deposited. Medium 'is maintained at this temperature. In Doll, the laser did not act directly on the substrate. Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling this page) Order USP 5,096,740 ("NAKAGAMA"; 5/92; 427 / 53,1) > The name is `` Through Laser "Method for the production of tritiated boron thin films by deposition", which mentions irradiating an excimer laser on a material containing atoms (also nitrogen atoms), and depositing tritiated trioxide on a substrate facing the target Boron. In the NAKAGAMA case, the laser does not directly act on the substrate. Generally, the substrate for growing CBN (triboride) must be limited to silicon.

USP 4,701,592 ( “CHEUNG” ; 10/87 ; 219/121LT), 名稱為“雷射辅助沈積及退火”,提出使用一 Q_交換Nd:YAG -15 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 五、發明説明( 32 88.11 Λ' R- 經濟部中央標準局員工消费合作社印製 橫斷面圖’其中特別插述了基質表面上多層鍍層的形成。 圖3為根據本發明’實施基貧·表面處理之系統的實施 例之一般透視圖。 圖4為根據本發明,實施基質表面處理之系統的另一 實旅例之一般透視圖。 圖5為將次要元素導入本發明之基質處理系统的喷嘴 之實施例的横斷面圖。 圖5A及5B為將次要元素導入本發明之基質處理系統 的喷嘴之另一個實施例的頂端平面圖及橫斷面圖》 圖6A為根據習用方法之碳化鎢基質的橫斷面圖示》 圖6A為根據本發明之技術方法,對圖6A之碳化鎢基 質作事前處理後的橫斷面圖示。 圖7為根據本發明之基質處理系統的透視圖,其中3 個雷射將能量(光束)透過喷嘴來照射基質表面》 圖8為支撐在基座上擬根據本發明做表面處理之基質 的橫斷面圖,在此特別插述了可根據本發明之技術方法形 成的平面電漿。 圖9為根據本發明之系統(如:圖7的系統)的主要 部分的圖示說明。 •圖10為根據本發明之範例,描述圖7系統各個部分的 一連串操作過程。 圖10A、10B、10C及l〇D分別為根據本發明一實施例, 有關激態原子NchYAG及C0雷射之操作參數的圖示,圏表 及曲線。 、 - 33 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210x297公资〉 (詩先¾請背面之注意Ϋ項再填寫本I·) · - I I ! - I · 1 I -I ?1 I - X,-0 丨· 五、發明説明 A' ΙΓ 經濟部中央標準局員工消費合作社印製 15 雷射,分裂其輸出光束’以第一輸ώ光束照射材料源(靶 材)以蒸發此材料,並以第二輸出光束照射基質0蒸發之 乾材在基質上形成一薄膜。此薄膜將置放在一可避免乾材 飛漱(熱凝結粒子喷出或是乾材之液體滴出)的位置 ’且第二輸出光束是用來退火沈積(在基質上)薄膜(濃 縮物體的薄膜)。 【前述技術的缺點】 上述製各種方法可稱為“沈積”方法,所望材料(如 ••金剛石)藉此方法形成並沈積在基質表面上。使用這些 方法’最佳只不過是在沈積鍍層及基質之間形成一分子鍵 ’而此一分子鍵在沈積鍍層及基質之間的“黏著力”(機 械鍵)相當有限。在某些應用中,如:在切削工具插入物 上鍍覆時,金剛石對基質的黏著力是非常重要的。此外, 沈積锻廣的最後表面磨光尚需要各種不同的後加工處理步 釋,以達到鏡層部分的最後理想表面精加工。 前述習知鍍覆方法也易受限於只能在基質上形成一薄 臈(或層)。這有類似雨落在草地上並結冰的情形。所得 到的冰層相當硬,但拫薄,並且由薄冰層(鍵層)到底下 的草地(基質)之間,厚度的變化很陡Α肖。這會造成很差 的磨力分佈,因此,施壓時,薄冰層容易龜裂般來說 ,鍍層的厚度會反應出鍍層所承受的壓力。 一般來說,習知方法的沈積率很低,需要對基質作事 前加熱及事後冷卻,無法在一般周園環境中完成(因此嚴 格限制了基質的大小),且不適合锻覆某些基質(如:含 -16 - Λ ^裝 打 L, '線 (請先聞讀背面之:^意事領再填寫本頁) 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 88,11 5 Λ 五、發明説明() 33 經濟部中央標準局負工消費合作社印製 圖11A為在表面處理之前,現有碳化鎢基質表面的顯 微照片,其中顯示了研磨的痕跡及表面的污損。 圖11B為圖ha之碳化鎢基質表面在經過本發明之表 面處理過程的事前處理後的顯微照片。 圖11C為圓iiB之碳化鎢基質表面在經過本發明之表 面處理過程的鍵層處理後的顯微照片。 圖11D為圖lie之碟化鎢基質表面在經過本發明之表 面處理後所攝得的Raman光譜。 圖11E為圓lie之碳化鎢基質在經過本發明之表面處 理後的橫斷面顯微圖示。 圖11F為根據本發明之技術方法所製作之金剛石鍍層 的顯微照片,其中顯示了 1,〇,〇的結晶方向。 圖12A為根據本發明之範例,描述光束橫斷面及交會 處的詳細圖示》 圖12B為根據本發明之範例,描述正在作表面處理之 基質的側面圖示。 圖13A到13H為根據本發明,在基質上製作可裁製鍍 層的圖示〇 圖131為使用本發明之鍍覆技術方法來製作三維物體 的透視圖,圖中並展現了本方法中的真正異質磊晶性質。 圖14Α及14Β為根據本發明之技術方法處理長管狀之 基質的透視圖。 圖15Α及15Β為根據本發明之技術方法施以鍍層之球 狀軸承的横斷面圖》 -34 - 本紙張尺度適用中國國家標準(CNS ) Α4賴 ( 21〇Χ297公幻 (請先閱讀背面之·;ΐ意事項再填寫本頁) ο 、rn If n · 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(16) 钴的基質),以及會產生黏著力(對基質而言)較差的鍍 層,且需要事後處理加工的步驟(以得到已施鍍之基質上 理想的最後表面加工)。這些方法也需要表面整備與活化 處理。 【RAMAN光譜】 描述(分析)沈積在基質上的金剛石(或DLC )鍍層 (或薄膜)的典型工具為Raman光譜。隨著金剛石技術的 進步,Raman光譜已逐漸成為分析金剛石材料的主要工具 。立方金剛石的布里元(Brillouin)區域中心具有一單一 Raman 作用第一階聲子模態。天然金剛石的單一結晶可由 位在1332 cm的單一尖峰來辨識。人造金剛石膜通常在大 約1550 cm的地方會有另一個尖峰,但目前尚未找到合理 的解釋。僅根據Raman光譜來分析一取樣的半定量分析是 很困難的。然而,在某些文獻中,假設1550 cm的尖峰是 來自於石墨,因為其感光度大約為高於金剛石2次方。似 金剛石碳(DLC >幾乎都具有這兩個尖峰( 1332 cm以及 1550cm )。由於感光度的因素,一般都認為1332 cm尖峰 是取樣中金剛石材料存在的証據。然而,許多人工金剛石 材料根本就沒有這個尖峰,而是在重要的背景發光上,有 微弱的寬闊特徵。一般來說,金剛石尖峰的威光度(尖銳 度)是依其顆粒大小的某些角度而定,也就是說,顆粒越 小,則感光度越低且尖峰越寬闊。此外,沈積在堅硬金剛 石基質上的金剛石薄膜(如:礬土或碳化物),會因為薄 膜上的壓力狀態,而在尖峰上產生15 cm的移位。雖然Raman -17 - 本紙張尺度適用中國國家標準(CNS ) Μ規格(2丨0Χ297公釐) I-^^----.fik-----—ΐτ (請先閱讀背面之注意事項再填寫本頁)USP 4,701,592 ("CHEUNG"; 10/87; 219 / 121LT), entitled "Laser Assisted Deposition and Annealing", proposes the use of a Q_exchange Nd: YAG -15-This paper standard is applicable to Chinese National Standard (CNS) A4 Specifications (210X297 mm) V. Description of the invention (32 88.11 Λ 'R- Cross-section view printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs' which specifically interpolates the formation of multilayer coatings on the surface of the substrate. Figure 3 is based on this A general perspective view of an embodiment of the system for implementing a base-surface treatment of the invention. FIG. 4 is a general perspective view of another practical example of a system for performing a substrate surface treatment according to the present invention. A cross-sectional view of an embodiment of a nozzle of a substrate processing system of the present invention. FIGS. 5A and 5B are top plan views and cross-sectional views of another embodiment of a nozzle of introducing a secondary element into the substrate processing system of the present invention. 6A is a cross-sectional view of a tungsten carbide substrate according to a conventional method. FIG. 6A is a cross-sectional view of the tungsten carbide substrate of FIG. 6A after pretreatment according to the technical method of the present invention. FIG. 7 is a view according to the present invention. Perspective view of a substrate treatment system in which three lasers illuminate the substrate surface with energy (beams) through a nozzle "Fig. 8 is a cross-sectional view of a substrate supported on a base to be surface-treated according to the present invention, here In particular, a planar plasma can be formed according to the technical method of the present invention. Figure 9 is a schematic illustration of the main parts of a system according to the present invention (such as the system of Figure 7). Figure 10 is an example according to the present invention. A series of operation processes of each part of the system of Fig. 7 are described. Figs. 10A, 10B, 10C, and 10D are diagrams of the operating parameters of the exciter atoms NchYAG and CO laser according to an embodiment of the present invention. Curves.-33-This paper size is in accordance with the Chinese National Standard (CNS) A4 size (210x297 public capital) (Poetry ¾ Please note the items on the back before filling in this I ·) ·-II!-I · 1 I -I ? 1 I-X,-0 丨 · V. Description of the invention A 'ΙΓ Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 15 Lasers, splitting its output beam' Illuminating the material source (target) with the first beam Evaporate this material and take a second output beam Irradiate the dried material evaporated from the substrate 0 to form a thin film on the substrate. This film will be placed in a position where the dry material can be prevented from flying out (spraying of thermally condensed particles or dripping of liquid from the dry material) and the second output beam It is used to anneally deposit (on the substrate) thin film (thin film of concentrated objects). [Disadvantages of the aforementioned technology] The various methods described above can be referred to as "deposition" methods, and the desired material (such as diamond) is formed and deposited by this method. On the surface of the substrate. Using these methods 'the best is to form a molecular bond between the deposition coating and the substrate', and this molecular bond has a relatively limited "adhesion" (mechanical bond) between the deposition coating and the substrate. In some applications, such as when plating on cutting tool inserts, diamond adhesion to the substrate is very important. In addition, the polishing of the final surface of the deposit and forging requires a variety of different post-processing steps to achieve the final ideal surface finishing of the mirror portion. The aforementioned conventional plating methods are also easily limited to being able to form only a thin layer (or layer) on the substrate. This is similar to the situation where rain falls on the grass and freezes. The resulting ice layer is quite hard, but it is thin and the thickness of the ice layer (bond layer) from the bottom to the grass (matrix) is very steep. This will cause a very poor grinding force distribution. Therefore, when the pressure is applied, the thin ice layer is easy to crack. As a result, the thickness of the coating layer reflects the pressure on the coating layer. Generally, the deposition rate of the conventional method is very low. It requires heating and cooling of the substrate beforehand, and it cannot be completed in a general environment of the garden (thus the size of the substrate is strictly limited), and it is not suitable for forging some substrates (such as : Including -16-Λ ^ installed with L, 'line (please read the back of it first: ^ Italian consul and then fill out this page) This paper size applies to China National Standard (CNS) A4 (210X297 mm) 88,11 5 Λ V. Description of the invention (printed by 33) Printed by the Central Laboratories of the Ministry of Economic Affairs and Consumer Cooperatives Figure 11A is a photomicrograph of the surface of the existing tungsten carbide substrate before surface treatment, which shows the traces of grinding and surface contamination. Fig. 11B is a photomicrograph of the surface of the tungsten carbide substrate of Fig. Ha after the pre-treatment of the surface treatment process of the present invention. Fig. 11C is the surface of the tungsten carbide substrate of circle iiB after the bond layer treatment of the surface treatment process of the present invention. Figure 11D is the Raman spectrum of the surface of the tungsten carbide substrate of Figure lie after the surface treatment of the present invention. Figure 11E is the surface of the tungsten carbide substrate of the lie after the surface treatment of the present invention. A cross-sectional micrograph of FIG. 11F is a photomicrograph of a diamond coating made according to the technical method of the present invention, which shows the crystalline direction of 1, 0, 0. FIG. 12A is an example according to the present invention, describing Detailed illustration of beam cross section and intersection "Figure 12B is a side view depicting a substrate being surface treated according to an example of the present invention. Figures 13A to 13H are tailorable coatings on a substrate according to the present invention Figure 131 is a perspective view of a three-dimensional object made using the plating technology method of the present invention, and shows the true heteroepitaxial nature of the method. Figures 14A and 14B are processed according to the technical method of the present invention. A perspective view of a long tubular substrate. Figures 15A and 15B are cross-sectional views of a ball bearing coated with a coating according to the technical method of the present invention. "-34-This paper size applies to Chinese National Standard (CNS) Α4 赖 (21〇 Χ297 public fantasy (please read the back of the page; the accidental matters before filling out this page) ο rn If n · A7 B7 printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (16) Cobalt matrix), And coatings that produce poor adhesion (to the substrate) and require post-processing steps (to get the ideal final surface processing on the substrate that has been plated). These methods also require surface preparation and activation. [RAMAN Spectroscopy] The typical tool for describing (analyzing) the diamond (or DLC) coating (or film) deposited on a substrate is Raman spectroscopy. With the advancement of diamond technology, Raman spectroscopy has gradually become the main tool for analyzing diamond materials. The cubic diamond The center of the Brillouin region has a single Raman acting first-order phonon mode. The single crystal of natural diamond can be identified by a single peak at 1332 cm. Synthetic diamond film usually has another peak at about 1550 cm, but no reasonable explanation has been found. Semi-quantitative analysis of a sample based on Raman spectroscopy alone is difficult. However, in some literatures, it is assumed that the 1550 cm spike is from graphite, because its sensitivity is about 2 times higher than that of diamond. Diamond-like carbon (DLC > almost all have these two peaks (1332 cm and 1550 cm). Due to the sensitivity factor, the 1332 cm peak is generally considered to be evidence of the existence of diamond material in the sample. However, many artificial diamond materials are simply Without this spike, there is a faint broad feature on important background luminescence. Generally speaking, the power (sharpness) of diamond spikes depends on some angle of their particle size, that is, the more the particles Smaller, the lower the sensitivity and the wider the peaks. In addition, the diamond film (such as alumina or carbide) deposited on a hard diamond substrate will cause a 15 cm shift in the peak due to the pressure on the film. Position. Although Raman -17-this paper size applies Chinese National Standard (CNS) M specification (2 丨 0 × 297 mm) I-^^ ----. Fik -----— ΐτ (Please read the note on the back first (Fill in this page again)

I "---- sail g .A 7 --------- B ' 一 ___________ 五、發明説明() 一—— 一〜- 34 圖16A為根據本發明之典型實施例,描述正在 處理之圓柱形工具的側面圖。· 圈16B為根據本發明另一個典型實施例,插述正 表面處理之圓柱形工具的侧面圖。 圖16C及16D為根據本發明之又一個實施例,描述正 在作表面處理之圓柱形工具的侧面及頂端圖》 圖16E為根據本發明再一個典型實施例,描述正在作 表面處理之圓柱形工具的側面圖。 圖16F為根據本發明另一個典型實施例,描述正在作 表面處理之圓柱形工具的侧面圖。 圖17A為適合將次要元素導入反應系统之裝置的部分 橫斷面圖。 圖17B為根據本發明,將氣體導入反應系統之喷嘴的 部分切除透視圖。 圖17C類似圖17B之喷嘴的部分橫斷面圖。 圖18為描述本發明之製法如何辅助一似CVD方法的圖 示。 圖19為適合將次要元素導入反應系统之另一個裝置的 部分橫斷面圖 、,—裝----一--訂-----丨-線 / (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 -35 - 本紙張尺度適用巾國國家標準(CNS)以規板(21〇x297公楚) 五、發明説明() 17 經濟部中央標準局員工消費合作社印製 光譜是分析在基質上所製造之金剛石或似金剛石鍍層的有 效工具,但是卻無法藉以判斷鍍層“品質。所以,在許 應用中(如:研磨機、車床、鑽孔機或類此實際上作為切 割工作物的工具),對於已定之一種或多種工作物材料( 如:鋁合金、鋼合金、複合材料;),已施鍍層之切削工具 的進刀率、工具壽命、剝落狀況及最後工作物的完工狀態 等,必須經過測試。一個“成功”的具艘層切削工具也二 須依其執行“乾”式(無潤滑油或切割油)機械加工的能 力而定。 【快速原型製作】 本發明的表面處理方法也可用在快速原型製作方面β 在習用的快速製作物體方法中,所提供的工程評估很 有限,且不適合生產用途或原型製作之用。習用技巧’在 其他非金屬技巧中,使用了光敏聚合物或擠押材料來製造 快速原型塑膠零件’或以雷射燒結粉來製造金屬零件。這 些方法所產生的都是實用性相當有限的粗糙零件。 譬如說,立體平版印刷裝置(SIA )通常用在快速原 型製作系統中。平版印刷術是由硬化的固化液態聚合物的 薄膜來製造三維物體的方法。現有的快速原型製作系统是 以選擇性地硬化或切割材料層成為由CAD資料所限定的形 狀來製造所要物體的。一般來說,紫外線,氬離子、或其 他型態的雷射可用來硬化此聚合物。CAD資料以數學方式 代表一連串的連續薄層來表示所要製造之物髏的形狀。 許多刊物均強調快速原型製作(RP)技巧在改進製造 -18 - 本紙法尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (詩毛閲請背面之;i意事項再填寫本頁)I " ---- sail g .A 7 --------- B '-___________ V. Description of the invention ()---~-34 Figure 16A is a typical embodiment according to the present invention, A side view describing the cylindrical tool being processed. Ring 16B is a side view of a cylindrical tool interpolated with a front surface according to another exemplary embodiment of the present invention. FIGS. 16C and 16D are side and top views illustrating a cylindrical tool being surface-treated according to yet another embodiment of the present invention. FIG. 16E is a cylindrical tool according to another exemplary embodiment of the present invention. Side view. Fig. 16F is a side view illustrating a cylindrical tool being surface-treated according to another exemplary embodiment of the present invention. Fig. 17A is a partial cross-sectional view of an apparatus suitable for introducing a minor element into a reaction system. Fig. 17B is a partially cutaway perspective view of a nozzle for introducing gas into a reaction system according to the present invention. Fig. 17C is a partial cross-sectional view of the nozzle similar to Fig. 17B. Fig. 18 is a diagram describing how the manufacturing method of the present invention assists a CVD-like method. Fig. 19 is a partial cross-sectional view of another device suitable for introducing minor elements into the reaction system, ------------------------- line-(Please read the precautions on the back first Refill this page) Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs -35-This paper is applicable to the national standard (CNS) of the country (21 × 297). 5. Description of the invention () 17 Central Standard of the Ministry of Economic Affairs Bureau's consumer cooperative printed spectrum is an effective tool to analyze the diamond or diamond-like coatings produced on the substrate, but it cannot be used to judge the "quality of the coatings. Therefore, in many applications (such as grinding machines, lathes, drilling machines) Or similarly used as a tool for cutting work), for one or more of the specified work materials (such as aluminum alloy, steel alloy, composite materials;), the cutting tool feed rate, tool life, The peeling condition and the finished state of the final work must be tested. A "successful" cutting tool with a layer must also be capable of performing "dry" (no lubricant or cutting oil) machining. [Rapid prototyping] The surface treatment method of the present invention can also be used for rapid prototyping. In the conventional rapid method of making objects, the engineering evaluation provided is limited, and it is not suitable for production or prototyping. Conventional Technique 'In other non-metallic techniques, photopolymers or extruded materials are used to make rapid prototype plastic parts' or laser sintered powder is used to make metal parts. These methods produce rough parts with limited practicality For example, Stereolithography (SIA) is commonly used in rapid prototyping systems. Lithography is a method of making three-dimensional objects from a film of a hardened, cured liquid polymer. Existing rapid prototyping systems are selective Geo-hardened or cut material layers become shapes defined by CAD data to make the desired object. Generally, UV, argon, or other types of lasers can be used to harden this polymer. CAD data represents a series of mathematically A continuous thin layer of the material to represent the shape of the skull to be made. Many publications are Transfer rapid prototyping (RP) techniques in improving manufacturing 18 - the scale of this paper method applicable Chinese National Standard (CNS) A4 size (210X297 mm) (please read the back of the gross poetry; i precautions to fill out this page)

I 經濟部中央猱S1局員二消费合作si印¾ 8a 1ί. 5 A7 B7 五、發明説明(34 -ί) 主要部分代表符號說明 100220,220 204,224,304,404,1304,1306,1308,1310,1'326 300,400,700,800,900, BDS 330,430, 500,550,722,1730,1750,1920 506 508 Ε1.Ε2.Ε3 510,520,530,561,580 512,522,532,562,582. 514,524.534,564,584, BG SS SF 552,554,1734 592 602 630,634. 723 804 808 810,814 1150,1206 1154,1204,1314,1316,1320,1324,1330,1554,1566 1156 1202(1202a,1202b,1202c,1202d) 1252 1262,1264,1266 - 1270 統統 道 面系系通 質粒 質表理送區 向束道體體 面基顆 基之處傳地 軸體光流氣源氣體平鎢皆線 程理質面束取臂央狀射口狀口衝來絕脅則制就4座起$#(亂1肷积^;1 流處基表光選噴中環雷入環出缓副隔噴環碳碳軸支突真造金散矩矩電聚 鍍物 C)造 DLCA 道綠Ϊ星質鏡束束 通β石零基遗光光 帶 層 {诗-κΐ,背云之---¾'項再填寫太頁) ©--- 、-= -35 - 1 - 本纸張尺度適用中國國家標準(CNS ) A4说格(210X297公釐) 經濟部中央標準局貝工消費合作社印裝 五、發明説明() 18 系統以及降低成本方面的重要性。除此之外,這些文章也 明確指出現有系統的限制。在最近‘兩個刊物中,‘‘製造 工程”(SME出版’ 1993年11月,ρρ· 37-42)以及“塑 勝技術”(1994年1月,ρρ. 40-44 ),都強調快速原型 及製造系统的重要。在其他文章中,例如··有關雷射燒結 那一篇,也指出快速原型製作的現狀。 一般而言’現有快速原型製作技術方法以選擇性地切 割材料層為CAD資料所界定義的形狀來製造物體。如“製 造工程”(1993年11月)所提及,“現有gp (快速原型 製作)技巧的目標是原型材料,能在提高溫度時提供更高 的強度。此工業需要的是完全金屬模(不使用燒結材料) 以便有效地分析物體。”除此之外,這篇文章也指出直接 製造零件是快速原型製作的最终步驟。此外,此文也強調 了材料的重要性’以及雖然有一些實驗性的快速原型製作 系统是以銘融金屬及金屬粉來作業,但他們仍不是高強度 且完全密度的金屬。 以下將插述習用之製造物體的方法(如:快速原型製 作)。下述的美國專利(已併入本文做為參考提述)指出 了立體石版印刷術及物體製造的現狀: USP 5,260,009 ( “製造3D物體的系統、方法以及其 製程Tyr~ ~ ~ USP 5,256,340 ( “以立體平版印刷術來製造3D物艚 始方法”); ~ USP 5,^48,456 ( “製造立體平版印刷術物體的方法 -19 - 本纸银又度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閱請背面之注意事項再填寫本頁) -----------,—訂-------/ί I I— ml In 1^1 mA.i A7 B7 五、發明説明(34_2) 經濟部中央揉準局男二消費合作乜印- 1338,1340,1342,1344 1352,1354,1356,1358,1360,1362 1366 1372a... 1372i 1380 1384a,1384b 1392 tl, t2 1402,1412 1404,1806,1928 1406,1416, 1408,1418 1410 1420 1552,1562, 1600 1602,1622,1642,1662.1682 1604 1606 1608 1610,1630,1664,1684 1646 1732 1734 1752 1754 1756 1758,1759, 1760,1770 1762,1772 1764.1774,1775 ' 1804 1812 1924 鍍層部分 鍍層結構 蛇形鍍層 鍍層區段 圓筒形鍍層 帶狀鍍層 鍍層結構 高度 鍍覆管狀基質 能量光束 管狀基質的一個(開口)端 管狀基質的另一端 拋物線反射面 射流 鋼珠袖承的組件 鍍覆圓形刀具 端銑刀 一杨部 一刀槽部 一刀尖 電漿 選定區(小斑點) 噴嘴體 袖向延伸孔 頂開口 底開口 中央空腔 噴嘴本體 第一、二入口 外管 内管 真空環境 適當窗口 耙材 (請先聞讀膂云之注意事項具填寫本頁)I Central Government Department of the Ministry of Economic Affairs S1 Bureau 2 Consumption Cooperation si 8a 1ί. 5 A7 B7 V. Description of Invention (34-ί) Description of Representative Symbols of Main Part 100220,220 204,224,304,404,1304,1306,1308,1310,1'326 300,400,700,800,900 , BDS 330,430, 500,550,722,1730,1750,1920 506 508 Ε1.Ε2.Ε3 510,520,530,561,580 512,522,532,562,582. 514,524.534,564,584, BG SS SF 552,554,1734 592 602 630,634. 723 804 1201,8081,8101,8101,2061,8101,206 1320, 1324, 1330, 1554, 1566 1156 1202 (1202a, 1202b, 1202c, 1202d) 1252 1262, 1264, 1266-1270 All the planes pass through the plasmid surface to the surface of the beam to the decent base The ground axis body light flow gas source gas flat tungsten is threaded and the physical surface beam is taken from the center of the arm and the mouth-shaped mouth is rushed to eliminate the threat. Then it is made up of four seats. ## (乱 1 肷 积 ^; 1 stream base light selection In the middle of the ring, the lightning in and out of the slow sub-spray ring, the carbon and carbon axons, the true gold, the scattered moment, and the electropolymerized plating.C) The DLCA. -κΐ, back to the cloud --- ¾ ', then fill in the page too) © --- 、-= -35-1-This paper size is applicable to Chinese National Standard (CNS) A4 said (210X297 mm) Ministry of Economic Affairs Bureau of Standards HIGHLAND consumer cooperatives printing equipment V. invention is described in () 18 system and reduce the importance of costs. In addition, these articles clearly point out the limitations of existing systems. In recent two publications, "Manufacturing Engineering" (SME Publishing) November 1993, ρρ · 37-42) and "Success Technology" (January 1994, ρρ. 40-44), both emphasize fast Prototyping and manufacturing systems are important. In other articles, such as the one on laser sintering, the status of rapid prototyping is also pointed out. Generally speaking, the existing rapid prototyping technology method is to selectively cut material layers to CAD To create objects in the shape defined by the data. As mentioned in "Manufacturing Engineering" (November 1993), "The goal of existing gp (rapid prototyping) techniques is to prototype materials that provide higher strength at elevated temperatures . What this industry needs is a complete metal mold (without the use of sintered materials) in order to efficiently analyze objects. In addition, this article also points out that direct manufacturing of parts is the final step in rapid prototyping. In addition, this article also emphasizes the importance of materials' and although some experimental rapid prototyping systems are based on Mingrong Metal And metal powder to work, but they are still not high-strength and full-density metal. The following will introduce the conventional methods of manufacturing objects (such as: rapid prototyping). The following US patents (which have been incorporated herein by reference for reference) (Description) points out the current status of stereolithography and object manufacturing: USP 5,260,009 ("Systems and methods for manufacturing 3D objects and their processes Tyr ~ ~ ~ USP 5,256,340 (" Initial method for manufacturing 3D objects using stereolithography ") ; ~ USP 5, ^ 48,456 ("Methods for the manufacture of three-dimensional lithographic objects-19-This paper is again applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the notes on the back before filling in (This page) -----------, -Order ------- / ί II— ml In 1 ^ 1 mA.i A7 B7 V. Description of the invention (34_2) Central Ministry of Economic Affairs Seal of the Second Men's Consumption Cooperation-1338,1340,1 342,1344 1352,1354,1356,1358,1360,1362 1366 1372a ... 1372i 1380 1384a, 1384b 1392 tl, t2 1402,1412 1404,1806,1928 1406,1416, 1408,1418 1410 1420 1552,1562, 1600 1602,1622,1642,1662.1682 1604 1606 1608 1610,1630,1664,1684 1646 1732 1734 1752 1754 1756 1758,1759, 1760,1770 1762,1772 1764.1774,1775 '1804 1812 1924Plating structure Cylindrical coating, ribbon coating, coating structure, highly plated tubular substrate, energy beam, one (open) end of the tubular substrate, the other end of the tubular substrate, parabolic reflection surface, jet ball sleeve, component plating, round cutter, end mill, one Yang, one knife The selected part of the blade tip plasma (small spots). Nozzle body sleeve extends to the top of the hole. Bottom opening. Central cavity. Nozzle body. First and second inlets. Outer tube. Inner tube. Vacuum environment. Suitable window rake material. Matters need to fill in this page)

35-2 本纸法尺度適用中國國家標準(CNS ) A4规格(210X297公釐.) 88.lt δ ΙΓ 五、發明説明() 19 與裝置”); USP 5,247,180 ( “立體平版印:刷術裝置及使用方& );— _ USP 5,236,637 ( “以立體平版印刷術來製造3D物爝 方法與裝置”^ "在 USP 5,017,317 ( “MARCUS” ; 5/91; 264/81) ,名稱為“氣相選擇光束沈積”,描述了使用雷射來ϋ 零件的方法,其中提到以電腦控制一導向能量光束(如: 雷射)來將雷射能量大量地照射到一内含一氣相材料的室 内中,此材料就是用來沈積以期最好能產生氣相的光分解 或熱分解,並且在要製成的零件所要的橫斷面區域内,選 擇性地沈積材料。對每個横斷面區域而言,光束的目標是 在橫斷面區域的範圍内沈積材料。接下來的每一層與前一 層連結在一起,以製造包含許多連結層的零件》 【發明目的】 本發明的目的是提供一改進之技術方法,用以施加( 製作)一被覆層,特別是將金剛石(或DLC )鍍層鍍在基 質上,如··切割工具插入物,特別是鍍在包含商用範圍的 銘的切削工具插入物或一圓形切削工具上。 本發明的另一個目的是提供在周遭(非真空)還境中 ,將鏡層鐘在基質上的技術方法。 本發明的另一個目的是提供在不加熱(或預熱)整個 基質的情形中,控制處理時的熱平衡,使不影響整個基質 的情況下,將鍍層鍍在基質上的技術方法。 -20 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) f 靖毛聞讀背面之a意事項再填寫本耳) -丁 、-·° 經濟部中央標準局員工消費合作社印製 • - - ί. » - - HI - -i In IK 1- · [ 五、發明説明( 3535-2 The size of the paper method applies to the Chinese National Standard (CNS) A4 specification (210X297 mm.) 88.lt δ ΙΓ V. Description of the invention () 19 and device "); USP 5,247, 180 (" Stereolithography: brush &Amp;);-_ USP 5,236,637 ("Methods and devices for the production of 3D objects using stereolithography" ^ " In USP 5,017,317 ("MARCUS"; 5/91; 264/81), name Selective Beam Deposition for the Vapor Phase describes the use of lasers to poke parts, which mentions the use of a computer-controlled beam of directed energy (such as a laser) to irradiate a large amount of laser energy to a gas phase In the material room, this material is used to deposit photodegradation or thermal decomposition that is best to produce a gas phase, and to selectively deposit the material in the area of the cross-section required for the part to be made. In the cross-sectional area, the goal of the beam is to deposit material in the area of the cross-sectional area. Each subsequent layer is connected with the previous layer to make a part containing many connected layers. [Objective of the Invention] Object of the Invention Is a change Further technical methods for applying (manufacturing) a coating layer, in particular plating diamond (or DLC) coating on a substrate, such as cutting tool inserts, especially cutting tool inserts coated with commercially available inscriptions Object or a circular cutting tool. Another object of the present invention is to provide a technical method for placing a mirror clock on a substrate in a surrounding (non-vacuum) environment. Another object of the present invention is to provide a non-heating ( (Or preheating) In the case of the entire substrate, the technical method of controlling the thermal balance during processing so that the plating layer is plated on the substrate without affecting the entire substrate. -20-This paper size applies to China National Standard (CNS) A4 specifications (210X297mm) f Jing Maowen read the a on the back of the matter and fill in this ear) -Ding,-· ° Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs •--ί. »--HI--i In IK 1- · [V. Description of the invention (35

經濟部中央標準局員工消費合作社印製 【詳細說明】 在本文中’“表面處理,’ 一詞表示改變基質的冶金性 質’包括在基質表面上或已施以鍍層之表面上“製作”一 盾或多層的鍍(覆)層,以及改良基質表面下之副表面區域 (“造材”或“轉移”區)的基質組成分。其中描述了兩 個表面處理“體系”,一個是《前處理,’體系,這是以適 合的鍍覆技術方法來處理基質以便接受後續的鍍覆作業; 另一個是‘‘鍍覆”體系,這是在基質表面上製成鍍層的作 業。在本文中’ “基質”一詞包括平面形或圓柱形切削工 具’且可用於需要表面處理之物體的選取區上。一般來說 ,本發明的鍍覆技術方法包括由基質中分離出“紕成,,( 或‘‘主要”)元素,或與此“組成”元素起反應,接著立 刻在此基質表面上的“反應區”内使其反應;視必要將“ 次要元素”選擇性地由“次要來源”導入以增大此反應; 並將‘‘合成材料”(反應後的材料,具有含相位等物理結 構,業經改造,改質’改變,及/或材料内已有另一種或 多種元素加入)擴散回基質。以此種方式,則轉移區域内 然會有合成物質的Μ人工製品”及/或製成的鍍層材料, 且所製成之鍍層將以擴散鍵結至基質上。 其它細節可參閱配合附圖所示各例之本發明的較佳實 施例之說明而了解。本發明雖將舉較佳實施例來說明,但 所述之實施例並不代表限制性。相反的,本發明之範圚是 由下文所載申請專利範園所界定,且任何涵蓋在本發明之 内涵及範圍内之變更,皆應視為包括在本發明之範圍内。 下文中,將討論在碳化鎢切削工具插入物上製作金剛 36 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公漦) 〆裝 訂 〆. V (請先聞讀背面之注意事項再填寫本頁)Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs [Details] In this article, the term "" surface treatment, "means changing the metallurgical properties of the substrate" includes "making" a shield on the surface of the substrate or on the surface that has been coated Or multi-layer plating (cladding), and the improvement of the matrix composition of the subsurface area ("material" or "transfer" area) under the surface of the substrate. Two surface treatment "systems" are described, one is "pretreatment , 'System, this is a suitable plating technology method to treat the substrate in order to accept subsequent plating operations; the other is a "plating" system, which is the operation of making a coating on the surface of the substrate. The term " matrix " includes a planar or cylindrical cutting tool herein and can be used on a selection of objects that require surface treatment. Generally, the plating method of the present invention includes separating or forming "elements", (or "main") elements from a substrate, or reacting with the "constituent" elements, and then immediately on the surface of the substrate, the " "Reaction zone" to make it react; if necessary, "secondary elements" are selectively introduced from "secondary sources" to increase the reaction; and "synthetic materials" (reacted materials, which have physical properties such as phase) Structure, modified, 'modified', and / or another material or materials added to the material) diffuse back into the matrix. In this way, there will be synthetic artefacts in the transfer area "and / or The produced plating material, and the produced plating layer will be bonded to the substrate by diffusion bonding. Other details can be understood by referring to the description of the preferred embodiment of the present invention in conjunction with the examples shown in the drawings. Although the present invention will be described with reference to preferred embodiments, the embodiments described are not meant to be limiting. On the contrary, the scope of the present invention is defined by the patent application park set forth below, and any changes covered by the meaning and scope of the present invention shall be deemed to be included in the scope of the present invention. In the following, the production of King Kong 36 on tungsten carbide cutting tool inserts will be discussed. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 × 297 cm) 〆Binding〆. V (Please read the precautions on the back before filling in this page)

五、發明説明() 20 經濟部中央標準局員工消費合作社印製 本發明的另一個目的是提供在基質上形成一擴散鍵結 鍵層的技術方法* : 本發明的另一個目的是提供所有鋼合金’包括不銹鋼 ’非鐵類材料或合金,以及其他材料,如:陶究類及聚合 體,之基質處理的技術方法。 本發明的另一個目的是提供可形成具有可裁製之形狀 、厚度、及組成之鐘層的技術方法。 本發明的另一個目的是提供不需另行事後處理精磨加 工之處理基質的技術方法。 本發明的另一個目的是提供以異質外延方式來處理基 質的方法,如:對人工金剛石,DLC,或其他結晶材料。 本發明的另一個目的是提供處理具有複雜幾何形狀之 基質的技術方法。 本發明的另一個目的是提供製作一工具或插入物(特 別是切削工具)的技術方法。 本發明的另一個目的是提供一在基質(如:切削工具 或插入物)上被覆(鍍覆)的技術方法,特別是被覆以金 剛石或似金剛石鍍層以及其他材料,這是在對於礙化物呈 現強韌性方式,即使在具有相當高的鈷含量下,對高速銅 、陶瓷、塑膠上的DLC (障壁鍍層等)、以及其他切削工 具材料有用的情況下,以及可在低溫與低壓下執行的情況 下完成的。 本發明的另一個目的是提供可增進鍍廣與基質黏著力 的方法,特別是金剛石鐘層(和DI」C )以友其他村料,是 -21 - a表I— (請先聞讀背雨之注意事項再填寫本貢)V. Description of the Invention (20) Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Another objective of the present invention is to provide a technical method for forming a diffusion bonding layer on a substrate *: Another object of the present invention is to provide all steel Alloys include stainless steel and non-ferrous materials or alloys, as well as other materials, such as ceramics and polymers, and substrate processing techniques. Another object of the present invention is to provide a technical method capable of forming a clock layer having a shape, thickness, and composition that can be cut. It is another object of the present invention to provide a technical method for treating a substrate without the need for additional post-treatment fine grinding processing. Another object of the present invention is to provide a method for treating a substrate in a heteroepitaxial manner, such as for artificial diamond, DLC, or other crystalline materials. Another object of the present invention is to provide a technical method for processing a substrate having a complicated geometry. Another object of the present invention is to provide a technical method for making a tool or insert, especially a cutting tool. Another object of the present invention is to provide a technical method for coating (plating) on a substrate (such as a cutting tool or an insert), especially a diamond or diamond-like coating and other materials. Strong toughness method, even if it has a very high cobalt content, is useful for high-speed copper, ceramics, plastic DLC (barrier plating, etc.), and other cutting tool materials, and can be performed at low temperature and low pressure Finished. Another object of the present invention is to provide a method that can improve the adhesion between the coating and the substrate, especially the diamond clock layer (and DI "C). It is -21-a. Table I— (Please read and read (Notes of rain, please fill out this tribute)

-1T 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公釐)-1T This paper size applies to China National Standard (CNS) A4 specification (210 × 297 mm)

五、發明説明() 36 經濟部中央標準局員工消費合作社印製 石鍍層的主要範例。然而,很顯然的,本發明並不受限於 這些材料〇 , : 、 【製成流程圖(圖1)】 圖1為根據本發明所實施之技術方法的整個流程100 之流程圖。一般來說,這些技術方法包括在基質表面上照 射雷射能量(最好為三個不同的雷射)以驅動建構在組成~ 分(元素)上的反應系統’並將位在適當接合點上的副成分( 元素)導入反應系統中。很明顯的,此製程可從各種不同的 方向來進行,也可在製造流程的不同點上終止。 在第一製程步驟(步驟A)中’雷射能量是用來: •以一種或多種速率,賦與位在基質表面下區域的一 種或以上的組成分可動性,並將此一種或以上的組成元素 朝向基質表面移動,以產生表面下區域之一種或以上的组 成元素的濃度梯度; •以控制方式分離(從基質内的其他材料分離)並蒸 發該一種或以上之組成元素的選取部分的選取量;以及“ •當初步氣體反應(PGR)在基質表面上發生時,立刻 對蒸發之一種或以上的組成元素作反應,以改質蒸發之— 種或以上的組成元素的物理結構及特性《»經改質與未經改 質之组成元素的結合為“合成村物”。此步称(步驟A ) 主要是為基質做其它進一步處理(如步驟B所述)作準備 。此製程也可在此階段终止’如步驟Η所示。 在製程步驟Β中,合成物質擴散至基質表面,以製造 由基質表面延伸至基質的"造材區這主要是由PQR中的 較高濃度合成物質被動擴散至基質中的較低濃度合成物質 -37 -V. Description of the Invention (36) The main examples of stone coatings printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs. However, it is obvious that the present invention is not limited to these materials. [,] [Making flow chart (Fig. 1)] Fig. 1 is a flowchart of the entire process 100 of the technical method implemented according to the present invention. Generally speaking, these technical methods include irradiating laser energy (preferably three different lasers) on the surface of the substrate to drive the reaction system built on the composition ~ element (element) and place it at the appropriate junction The secondary components (elements) are introduced into the reaction system. Obviously, this process can be carried out from various directions, or it can be terminated at different points in the manufacturing process. In the first process step (step A), the 'laser energy is used to: • impart mobility to one or more constituents located in a region below the surface of the substrate at one or more rates, and The constituent elements move towards the surface of the substrate to produce a concentration gradient of one or more constituent elements in the subsurface area; • Separated in a controlled manner (separated from other materials in the matrix) and evaporates the selected portion of the one or more constituent elements The amount selected; and "• When the preliminary gas reaction (PGR) occurs on the surface of the substrate, immediately react the evaporated one or more constituent elements to modify the physical structure and characteristics of the evaporated one or more constituent elements "» The combination of the modified and unmodified components is a "synthetic village." This step (step A) is mainly to prepare other further processing of the substrate (as described in step B). This process also It can be terminated at this stage 'as shown in step Η. In process step B, the synthetic substance diffuses to the surface of the substrate to make a " fabrication " that extends from the surface of the substrate to the substrate. This area is mainly a passive diffusion of the higher concentration of PQR synthetic matrix to lower concentrations synthetic -37--

(請-^請^-之法意事項再填穹大二貝)(Please-^ Please ^ -For the legal and Italian matters, fill in the second big shell)

本紙張尺度適用中國國家標準(CNS ) Α4規格(210X297公釐) 經濟部中央標準局貝工消費合作社印製 88.11. δ Λ 7 1Γ 五、發明説明() 21 在對碳化物呈現強韌方式,以及能在低溫與低壓下執行之 方式下完成的。 : 本發明的另一個目的是提供處理基質表面的技術方法 ,以在基質表面下提供一擴散鍵結複合材料。 本發明的另一個目的是提供材料之處理及製造的技術 方法,以產生具有所需複合材料的物體,例如:金剛石、This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) Printed by the Bayer Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 88.11. Δ Λ 7 1Γ V. Description of the invention And can be performed under low temperature and low pressure. : Another object of the present invention is to provide a technical method for treating the surface of a substrate to provide a diffusion-bonded composite material under the surface of the substrate. Another object of the present invention is to provide technical methods for the processing and manufacturing of materials to produce objects with desired composite materials, such as diamond,

DLC、氮化三蝴(CBN)、B*C、SiC、TiC、Cr3C2、TiN 、TiB2、Si 3N 4和cCN、銳、碳化物、後化鈦、破化銘等 〇 本發明的另一個目的是提供在基質上製作“設計者” 的鏡層的技術方法。 本發明的另一個目的是提供可製作有用之金屬、陶竟 、及複合部分為最後狀態的系統,而不需要任何事後處埋 (在系統環境外)精加工,以及具有加強的物理性質,這 是由其它目前已知的裝置所無法製造出來的本案進步的強 化複合物質所帶來。 本發明的另一個目的是來提供用以事前處理(準備) 基質以便於處理後藉由本發明或現有之技巧鍍覆鍍層的技 術方法。 本發明的另一個目的是提供處理基質表面的技術方法 ’不需對基質表面作個別且不同的事前處理步称以獲得基 質所需表面;換句話說,就是將實施事前處理及製成鍍層 一起(在原地)完成。 根據本發明’將來自三個不同雷射的三個不同雷射光 -22 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐) ----- Ϊ —I— I. - In n u Λ /Ά .11 - I -I- --Γ 4 *τ ί (請先閱讀背面之注意事項再填寫本頁) 紙U. 5 五、發明説明() 37 的製程。此一製程接著可往兩個方向前進(下文所述的步 驟C及D)。 ' 在製程步驟C中,此製程可在已成功地形成具有控制 濃度之合成物質的造材區時終止。譬如說,造材區内的合 成物質可為金鋼石或DLC。一般的情形中,合成物質的製 作及至造材區的擴散不會改變基質的體積。 另一方面,相對於步驟C而言,在製程步驟D中,也 可對造材區内的合成物質重複地作移動、蒸發及反應各步 驟(類似步驟A的方式),或是對基質之一種或以上之组 成元素作移動、蒸發及反應,或是兩者都作,以再次處理 造材區。在造材區内再次處理合成物質的情況中,此製程 可獲得協同作用且將以更大的速率(如,指數增加)來進 行。重複此製程以達到基質表面之合成材料的任何理想濃 度’以及造材區内合成材料的任何理想梯度。 在製程的這個點上,可在基質表面上製作鍍層〇此一 鍍層’或造成之材料,和造材區上的鍍層具有完全不同的 化學性質》為製作此鍍層,將副來源導入(步驟E)或不 導入(步驟F)系統中均可。 經濟部中央標準局貝工消費合作社印裝 {碕先閱讀背面之:丄意事項再填寫本頁) 在製程步驟E中,激化“副”來源(基質本身視為“ 主來源)以將一種或以上之“副”元素(基質上之一種 或以上的组成元素視為“主”元素)導入反應系統中。在 此情形中,使用能量來源以在基質表面上製作合成之鍍層 組成物(例如:金剛石或似金剛石碳)β合成之鍍層组成 是包含一種或以上的副元素與合成材料(其中可為相同或 不同的材料)所製作出的材料〇 -38 - 本紙張尺度適用中國國家標準(CNS) Α4規格(21〇χ297公釐) ___ς爻年1v曰/__DLC, Nitrided Nitrile (CBN), B * C, SiC, TiC, Cr3C2, TiN, TiB2, Si 3N 4 and cCN, sharp, carbide, post-titanium titanium, broken inscription, etc. Another object of the present invention It is a technical method to provide a "designer" mirror layer on a substrate. Another object of the present invention is to provide a system in which useful metals, ceramics, and composite parts can be produced in the final state without the need for any post-processing (outside the system environment) finishing and enhanced physical properties. It is brought about by the present enhanced fortified compound that cannot be manufactured by other currently known devices. Another object of the present invention is to provide a technical method for pre-treating (preparing) a substrate to facilitate plating after the processing by the present invention or existing techniques. Another object of the present invention is to provide a technical method for treating the surface of a substrate. 'It is not necessary to perform separate and different pre-treatment steps on the surface of the substrate to obtain the required surface of the substrate. (In situ) done. According to the present invention 'will be three different laser light from three different lasers-22-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ----- Ϊ —I— I. -In nu Λ / Ά .11-I -I- --Γ 4 * τ ί (Please read the notes on the back before filling out this page) Paper U. 5 V. Description of Invention () 37 Process. This process can then proceed in two directions (steps C and D described below). 'In process step C, this process may be terminated when a material zone having a controlled concentration of a synthetic substance has been successfully formed. For example, the synthetic material in the material area can be diamond or DLC. In general, the production of synthetic materials and diffusion into the material area do not change the volume of the matrix. On the other hand, compared to step C, in the process step D, the steps of moving, evaporating, and reacting the synthetic material in the material area can be repeated (similar to the method of step A), or the substrate One or more constituent elements are moved, evaporated, and reacted, or both, to reprocess the material area. In the case where synthetic materials are processed again in the material area, this process can achieve synergy and will proceed at a greater rate (eg, exponential increase). This process is repeated to achieve any desired concentration of synthetic material ' on the surface of the substrate and any desired gradient of synthetic material in the material area. At this point in the process, a coating can be made on the surface of the substrate. This coating 'or the material it creates has completely different chemical properties than the coating on the material area. "To make this coating, introduce a secondary source (step E ) Or not imported (step F) into the system. Printed by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economics {阅读 Read the back: Intentional matter before filling out this page) In process step E, the “secondary” source (the matrix itself is regarded as the “primary source”) The above "secondary" elements (one or more of the constituent elements on the substrate are considered "primary" elements) are introduced into the reaction system. In this case, an energy source is used to make a synthetic plating composition on the substrate surface (for example: Diamond or diamond-like carbon) β-synthetic coating composition is a material made of one or more secondary elements and synthetic materials (which can be the same or different materials) 〇-38-This paper size applies to Chinese national standards (CNS ) Α4 size (21〇χ297 mm) ___ ς 1v said in the following year / __

五、發明説明(22) I——^——一J 束的能量照射在基質表面上來處理基質表面。控制這三個 雷射的製法參數及交互作用,以在基質表面上及/或下達 成所需的效果。此製法參數包括: •每個雷射的波長; •操作模式(如:脈波、超脈波或連續波),包括: 每個雷射的脈波寬度及頻率; •每個雷射的輸出功率; •每個雷射的能量; •每個雷射光束在基質表面上的入射角; •每個雷射光束之橫斷面區域形狀以及大小;以及 •在基質表面上照射雷射光束的順序(時間關係)。 譬如說,沈積在基質副表面區域之一個或以上的組成 (天然)元素可以一種或多種流動速率,並且朝著基質表 面移動,以產生副表面區域上一種或以上的組成分(組成 元素的濃度梯度。再者,組成元素之所選部分的選取量可 在控制方式下分開並蒸發。基質之一個或以上的組成元素 可視為製法中材料的"主要”來源。 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 根據本發明,已蒸發之一種或以上的組成元素在基質 表面上立刻作用,以改進蒸發之一種或以上的組成元素的 物理結構及特性,藉以產生可接著擴散回歸基質的複合材 料0 在製程中的某一個時刻,也許是製程一開始時,可將 包含副元素之一個或以上的副來源置入立刻在基質表面上 作用的反應系統。譬如說,在基質中的碳可流動、蒸發及 -23 - 本紙張尺度逋用中國國家標準(CNS ) Α4規格(210Χ297公釐) 經濟部中央標準局負工消費合作社印掣 一^、發明说明() > 38 如上所述(如:步驟D )’ 一,材區可在基質表面下 形成。此造材區可包含一主造材區'以及位在主造材區與基 質表面間的副造材區。一般而言’副造材區的深度小於主 造材區,且一個或以上之副造材區的濃度會大於主造材區 。關聯於主造材區,副造材區提供了後續之在基質上製作 鍍層有關之相對鍵結、支撐以及壓力分佈等重要功能。造 材區(主與副)對於界定其後之在基質上製作鍍層(如果 有)所需之鍵結、支撐以及壓力分佈有關的參數有全面性 地影響。以此種方式,在基質表面下會形成深度為“d” 的造材區,且在基質表面上可製作厚度為“t”的鍍層材 料。 譬如說,在鋼或燒結碳化物基質上製作大约3麵(毫 米)厚的金剛石層(鍍層),則主造材區大約為0.75mm深 ,副造村區大約0.25mm厚0 另一方面,相對於步驟E而言,在製程步驟F中,並 不將副來源注入系統中,而是將造材區中的少量合成材料 移動、蒸發及反應(以類似步驟A的方式)以形成基質下 的副造材區,它可再一次反應(利用能量來塬)以形成基 質的鍍層。這可在基質上製作一個比使用副來源所製作的 鍍層(步驟E)還要薄的鍍層。然而,必須是基質本身有 足夠的组成元素,可供在基質表面上製作厚的鍍層(步驛 F)為原則。 譬如說’在鈷母體中使用碳化鎢(如:92%)之基質 ’則能量來源會使得鎢與碳化物游離成鎢及碳的形式,而 且破會成為在基質上製作金剛石或DLC鍍層的組成元素( -39 - 本紙張尺縣(CNS ) A4規格(2iQx297公楚)- (請先閱請背而之注意事項再填寫本頁)5. Description of the invention (22) I —— ^ —— A J beam of energy is irradiated on the surface of the substrate to treat the surface of the substrate. Control these three laser process parameters and interactions to achieve the desired effect on and / or on the surface of the substrate. The parameters of this manufacturing method include: • the wavelength of each laser; • the operating mode (such as: pulse, super pulse or continuous wave), including: the pulse width and frequency of each laser; • the output of each laser Power; • the energy of each laser; • the angle of incidence of each laser beam on the substrate surface; • the shape and size of the cross-sectional area of each laser beam; and Sequence (time relationship). For example, one or more constituent (natural) elements deposited on the sub-surface area of the substrate may move at one or more flow rates toward the surface of the substrate to produce one or more constituents (concentration of constituent elements) on the sub-surface area. Gradient. In addition, the selected amount of selected elements of the constituent elements can be separated and evaporated in a controlled manner. One or more constituent elements of the matrix can be regarded as the "main" source of materials in the manufacturing method. Staff Consumption of the Central Standards Bureau of the Ministry of Economic Affairs Printed by a cooperative (please read the notes on the back before filling this page) According to the present invention, one or more constituent elements that have evaporated have an immediate effect on the surface of the substrate to improve the physical structure and Properties to produce a composite that can then diffuse back into the matrix. 0 At some point in the process, perhaps at the beginning of the process, one or more secondary sources containing secondary elements can be placed in the reaction that acts immediately on the substrate surface. System, for example, carbon in the matrix can flow, evaporate, and -23-paper size 逋Use Chinese National Standard (CNS) A4 specification (210 × 297 mm) Printed by the Consumers ’Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ^, Description of the invention () > 38 As mentioned above (eg: step D) ' It is formed under the surface of the substrate. This material area can include a main material area 'and a secondary material area located between the main material area and the surface of the substrate. In general, the depth of the' secondary material area 'is smaller than the main material area And the concentration of one or more auxiliary material areas will be greater than the main material area. In connection with the main material area, the auxiliary material area provides relative bonding, support and pressure distribution related to subsequent plating on the substrate. Important function. The material area (primary and secondary) has a comprehensive influence on the parameters related to the bonding, support and pressure distribution required to define the subsequent coating (if any) on the substrate. In this way, in Underneath the surface of the substrate, a material zone with a depth of "d" is formed, and a coating material with a thickness of "t" can be made on the surface of the substrate. For example, about 3 sides (mm) thick on a steel or sintered carbide substrate Diamond layer (plated Layer), the main building material area is about 0.75 mm deep, and the secondary building area is about 0.25 mm thick. On the other hand, compared to step E, in process step F, the secondary source is not injected into the system, and It is to move, evaporate and react a small amount of synthetic material in the material area (in a manner similar to step A) to form a secondary material area under the substrate. It can react again (using energy to purge) to form a coating of the substrate. This allows a thinner coating to be made on the substrate than using a secondary source (step E). However, the substrate itself must have sufficient constituents to make a thick coating on the surface of the substrate (step F) is the principle. For example, 'Using tungsten carbide (eg 92%) matrix in cobalt matrix', the energy source will cause tungsten and carbides to dissociate into tungsten and carbon forms, and breaking will become diamond on the substrate. Or DLC coating components (-39-The paper ruler (CNS) A4 size (2iQx297))-(Please read the precautions before filling this page)

經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(23 ) 反應,並以可提供額外碳给反應系統的二氧化碳副來源來 放大,以形成基質上的金剛石或似金剛石碳鍍層。 本發明可由發生在基質表面上的冶金術的改變而獲得 好處。藉由將反應之構成元素擴散回基質,及/或將反應 之副元素擴散回基質的方式,則基質内擴散區域(在此也 稱為轉移區域)將會有一個材料組成分的梯度,它是由純 粹基質轉移至純粹鍍層。這不只可提供基質上所製作之鍍 層與基質本身之間的内部擴散(如:冶金術)鍵結,也可 提供施於基質鍍層上之物理壓力的平滑(相當不陡峭)轉 移0 根據本發明,在基質内所製造的兩個不同擴散區域: 在基質内的主造材區(轉換區),以及在主造材區及基質表 面之間的副造材區。譬如說,在鋼或接合碳基質上製作約 3毫米厚之金剛石層(鍍層 > ,則主造材區大約為0.75毫 米深,而副造材區大約為0.25毫米厚。 根據本發明的特徵,基質上所選地區適合以三個雷射 來處理,或是以一個雷射和另一能量來源(如:電子光束 ,X-射線光束等)來放射可控制光束。“所選地區”的意 思是只需處理此一小於基質整個表面地區的地區即可,而 不必處理其它部分。然而,可以想見的是,有一連串的所 選地區必須以序列或平行方式來處理,甚至包括整個基質 表面。 根據本發明,在製成每個步驟期間所執行的活動可由 適當的裝置來控制,例如:CNC控制站。雷射的操作參數 -24 - 本紙張尺度適用中國國家標準(CNS ) A4規格(2ΙΟ'〆297公釐) ---------篆-- (請先閲讀背面之注意事項再填寫本頁) 、-=aPrinted by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (23) The reaction is amplified with a carbon dioxide secondary source that can provide additional carbon to the reaction system to form a diamond or diamond-like carbon coating on the substrate. The present invention benefits from metallurgical changes that occur on the surface of the substrate. By diffusing the constituent elements of the reaction back into the matrix and / or diffusing the secondary elements of the reaction back into the matrix, there will be a gradient of material composition in the diffusion region (also referred to herein as the transfer region) within the matrix. It is transferred from pure matrix to pure plating. This not only provides internal diffusion (such as metallurgy) bonding between the plating produced on the substrate and the substrate itself, but also provides a smooth (rather not steep) transfer of physical pressure on the substrate. 0 According to the present invention , Two different diffusion regions made in the matrix: the main material area (transition area) in the matrix, and the secondary material area between the main material area and the surface of the substrate. For example, if a diamond layer (plating layer) of about 3 mm thick is made on a steel or bonded carbon substrate, the main material area is about 0.75 mm deep and the secondary material area is about 0.25 mm thick. Features according to the invention The selected area on the substrate is suitable for processing with three lasers, or a laser and another energy source (such as: electron beam, X-ray beam, etc.) are used to emit a controllable beam. This means that it is only necessary to deal with this area that is smaller than the entire surface area of the matrix, but not other parts. However, it is conceivable that a series of selected regions must be processed in a sequential or parallel manner, even the entire matrix Surface. According to the present invention, the activities performed during each step of the production can be controlled by appropriate devices, such as: CNC control station. Laser operating parameters -24-This paper size applies Chinese National Standard (CNS) A4 specifications (2ΙΟ'〆297mm) --------- 篆-(Please read the notes on the back before filling in this page) 、-= a

8¾ II A ir 五、發明説明( 經濟部中央標準局員工消費合作社印製 39 固有來源)。此外’鈷母體中所分解 作金剛石或DLC鍍層所需之碳的 軸本Ϊίί技術方法優於現有的⑽(及PVD) J程”’,用方法中銘會造成系統中石墨的成長,並因此“ 損害系統’且抑制金剛石鍍層或DI£鏡層的形成。 使用本發明之方法’聰財所形錢任何石墨可有 效且連續地轉換為所製作之金剛石鍍層中的金剛石 。最好 疋,所有可供使用的石墨皆可在此製程中消耗掉。然而, 如果有少量石墨仍然未轉換為金剛石並不會損壞到此製程 在製程步驟G(接在步驟£之後)中,在基質上製作 鍍層時,可將具有不同副元素的不同副來源導入反應系統 中。這會在基質上製作出一多層鍍層。 譬如說,由碳化鎢基質開始,依序將副元素導入反應 系統中,可在其上製作一層碳化鈦鍍層,上面再製作一層 氮化鈦層,更上面再製作一層金剛石層。 由其它的範例’可在氮化三硼(CBN )的薄鍍層上被 覆一層厚的金剛石鍍層。 此製程也可在氮化矽上製作金剛石鍍層。 此製程也可用來製作金剛石與OT的複合結構,反之 亦然,或是製作混合有破化矽或氮化矽的金剛石粒子之複 合結構。 如製程步驟Η中所示,在某些情況下最好避免(或減 低)將合成物質擴散回基質(見步驟Β),在這種情形下 ,此製程可在步驟Α之基質的一種或以上的組成元素移動 、蒸發及反應之後停止&lt;•這是在基質表面上製作極薄的鍍 40 本纸張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 一讀先閱讀背面之注意事項再填寫本頁) 訂 ο! 五、發明説明( ss.it 5 Λ- Β: 經濟部中央楯準局貝工消費合作社印製 24 及光學可經由配置來達成任何時刻任何所需的 在本發明的典型實施例中:--三個雷射中的第一個為紫外線雷射,例如 態原子雷射’在192 nm ’ 248nm,或308nm下操作,輪ψ 率為數十百(0-200)瓦特(W)數,一個脈波能量最H功 500 mJ (千分之一焦耳),一個脈波長度最多為26如奎 微秒),重複率最高為300Hz (赫茲); .三個雷射中的第二個為NdL.YAG雷射,在K〇6微米連 續波(CW)或突發模式或是Q-交換下操作,操作之輪出~ 功率為上百(0-1500)瓦特,脈波能量最多到15〇 j(焦耳 ),脈波頻率最高為1000Hz,脈波長度最長為2〇毫秒^邮) ,且(在脈波/突發模式下)脈波流期間最長為5秒;S •三個雷射中的第三個為CO雷射,在波長為10 6微 米下操作,輸出功率為500-1000W,脈波頻率最高為25Khz ,一個脈波最多為25微秒,超脈波頻率最高為20Khz,超 脈波寬度最多為500微秒。 在本發明基質處理技術方法中的典型應用中: •此基質為碳鋼; •組成元素為碳; •副元素也可為碳,這是由處理,所需鍍層厚度, 以及此基質是否為高碳鋼或低碳鋼來決定; •所得的造材區深度&quot;d&quot;大約為1.0mm (包括大約為 0.25_的副造材區);以及 •所得的金剛石鍍層厚度大約為3mm (或大約為造 25 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁) ------------1T------ m I. I ,1:1 m ·8¾ II A ir 5. Description of the invention (printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 39 Inherent source). In addition, 'the technical method of the carbon required for the diamond or DLC coating decomposed in the cobalt matrix is better than the existing process (and PVD) J process', and the use of this method will cause the growth of graphite in the system and therefore "Damage the system 'and inhibit the formation of diamond coatings or DI mirror layers. Any graphite formed using the method of the present invention can be efficiently and continuously converted into diamond in the diamond coating produced. Best of all, all available graphite can be consumed in this process. However, if a small amount of graphite is still not converted to diamond and will not be damaged to this process. In process step G (following step £), when making a coating on a substrate, different side sources with different side elements can be introduced into the reaction. System. This creates a multilayer coating on the substrate. For example, starting with a tungsten carbide matrix and sequentially introducing the secondary elements into the reaction system, a titanium carbide coating can be made on top of it, a titanium nitride layer on top, and a diamond layer on top. According to another example ', a thin coating of triboron nitride (CBN) can be coated with a thick diamond coating. This process can also produce diamond coatings on silicon nitride. This process can also be used to make a composite structure of diamond and OT, and vice versa, or a composite structure of diamond particles mixed with broken silicon or silicon nitride. As shown in process step Η, in some cases it is best to avoid (or reduce) the diffusion of synthetic material back to the substrate (see step B). In this case, the process can be performed on one or more of the substrates in step A The constituent elements stop after moving, evaporating, and reacting. <• This is a very thin plated 40 on the surface of the substrate. This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 mm). Please fill in this page again) Order ο! 5. Description of the invention (ss.it 5 Λ- Β: Printed by the Central Laboratories Bureau of the Ministry of Economic Affairs, Shelley Consumer Cooperatives, 24 and optics can be configured to achieve any required In a typical embodiment of the invention:-the first of the three lasers is an ultraviolet laser, for example, the atomic laser of the state "operates at 192 nm" 248 nm, or 308 nm, and the wheel ψ rate is several hundreds (0- 200) Watt (W) number, the energy of a pulse wave is the highest H work 500 mJ (one thousandth of a joule), the length of a pulse wave is up to 26 such as kweiseconds, and the repetition rate is up to 300Hz (Hertz); three The second of the lasers is the NdL.YAG laser, at K〇6 microns Continuous wave (CW) or burst mode or Q-switch operation, the output of the operation is ~ hundreds (0-1500) watts, pulse energy up to 15j (Joule), pulse frequency is up to 1000Hz, the pulse length is up to 20 milliseconds), and (in pulse / burst mode) the pulse duration is up to 5 seconds; S • The third of the three lasers is a CO laser, Operating at a wavelength of 10 6 microns, the output power is 500-1000W, the pulse frequency is up to 25Khz, one pulse is up to 25 microseconds, the super pulse frequency is up to 20Khz, and the super pulse width is up to 500 microseconds. In the typical application of the substrate processing technology method of the present invention: • the substrate is carbon steel; • the constituent element is carbon; • the secondary element can also be carbon, which is caused by the treatment, the required coating thickness, and whether the substrate is high Carbon steel or low carbon steel to determine; • the depth of the obtained material area &quot; d &quot; is about 1.0mm (including the secondary material area of about 0.25_); and • the thickness of the obtained diamond coating is about 3mm (or about In order to make 25 paper sizes, the Chinese National Standard (CNS) A4 specification (210X297 mm) is applied (please read the precautions on the back before filling this page) ------------ 1T ---- -m I. I, 1: 1 m

II

五、發明説明() 40V. Description of the invention () 40

經濟部中央標準局員工消費合作社印製 層時很有利的一點。 譬如說,最好可在不影響基質·原來容積(如:維度) 的情況下,在基質表面上(如:銅線)或基質表面下形成 金剛石或DLC的薄鍍層。譬如說,球或滾筒軸承執道或座 圈的選取面或整個面積的材料組成可在不影響原來的容積 的情況下加強。 此製造流程也可由一開始的移動、蒸發及反應(步驟 A)直接進行至將副來源導入反應系統中的步驟(步驟E )。(此“分支路徑”視為一製程步驟’即圖1中的製程 步驟I )» 譬如說,為了在純鈦基質上製作金剛石,必須將作為 副元素的碳導入系統中(在基質中沒有可供使用的碳可作 為组成元素)。基質中鈦的移動、蒸發及反應步驟可與接 下來製作的金剛石或DLC鍍層形成一擴散鍵結。 譬如說,由矽基質開始,藉由副來源將碳導入以製造 材區中碳化矽的矽。接著,可將碳化矽轉換成金剛石。或 者是,譬如說,藉由副來源將氮導入以製造造材區中氮化 矽的矽,以及依序以副來源來提供反應系統中的碳,以形 成造材區上的金剛石或DLC層。 【造材區(圖2A)】 圖2A為根據本發明之方法,根據圖1所述之一個或以 上的製程步驟所處理的典型處理基質200的橫斷面圖。其 中顯示具有頂端表面204的基質202,在基質表面下形成 的副造材區206,在副造材區206下形成的主造材區208 -41 - (請先閲讀背面之注意事項再填寫本頁) δ衣. 訂 11 j 本紙張尺度適用中國國家標窣(CNS ) A4規格(210X297公釐) 紙The Central Consumers Bureau of the Ministry of Economic Affairs has a favorable point when it comes to the print floor of consumer cooperatives. For example, it is best to form a thin coating of diamond or DLC on the surface of the substrate (eg, copper wire) or under the surface of the substrate without affecting the original volume (eg, dimensions) of the substrate. For example, the material composition of the selection surface or the entire area of the ball or roller bearing raceway or raceway can be strengthened without affecting the original volume. This manufacturing process can also be performed directly from the initial movement, evaporation, and reaction (step A) to the step of introducing a secondary source into the reaction system (step E). (This "branch path" is regarded as a process step, that is, process step I in Fig. 1) »For example, in order to make diamond on a pure titanium substrate, carbon as a secondary element must be introduced into the system (there is no Available carbon can be used as a constituent element). The steps of titanium movement, evaporation, and reaction in the matrix can form a diffusion bond with the diamond or DLC coatings made next. For example, starting with a silicon matrix, carbon is introduced by a secondary source to produce silicon carbide silicon in the material region. Silicon carbide can then be converted into diamond. Or, for example, nitrogen is introduced by a secondary source to produce silicon nitride silicon in the material region, and carbon in the reaction system is sequentially provided by the secondary source to form a diamond or DLC layer on the material region. . [Materials area (Fig. 2A)] Fig. 2A is a cross-sectional view of a typical processing substrate 200 processed according to one or more of the process steps described in Fig. 1 according to the method of the present invention. It shows a substrate 202 with a top surface 204, a secondary material area 206 formed under the substrate surface, and a primary material area 208 -41 formed under the secondary material area 206-(Please read the precautions on the back before filling in this Page) δ clothing. Order 11 j This paper size applies to China National Standard (CNS) A4 size (210X297 mm) paper

ψ* D A&quot; ΙΓ 個典型應用中’ 且所得的鍍層分 基質材料,混合 五、發明説明( 25 材區深度的三倍)。 在本發明基質處理技術方法中-的另 其組成元素為欽’副元素為氮,碳或蝴 別為氮化鈦,碳化欽或二蝴化欽。 本發明之技術方法的其他應用(即·孩 物,副來源等)均在本發明之範園及内涵内 根據本發明的特徵’照射在基質上的能量可利用來』 生(或控制)欲製作之鐘層上的物理壓力,而且,藉由书 細誘導此種壓力,可以控制(促進)結晶的生長,以有贺 增加比現有技術方法更好的生長率。 根據本發明的特徵,照射在基質上的能量可用來達读 在基質表面上形成任何想得到的構形C结構),可以做為 最後的結果(即原地事後精加工)’或是為了之後的製作 鍍層的表面準備工作(即事先處理表面&gt; 根據本發明的特徵,副來源包括一作為副元素的摻雜 ΐί雜譬如說,金剛石或Μ鍍層可在半導體應用中被月 根據本發明的特徵,可將電力偏壓施於基質上來押 基質或已經形成之鍍層上的結晶成長方向。 二 本發明的一優點為不需在真空下執行β然而,基 的作用區域最妤以隔絕氣體(例如:氮或氬)來隔絕。 而,這並不是說此方法不必在真空下完成。此製法或^ 製程可連同現有的CVD及CVD-型方法來使用以減少 制。譬如說,不需加熱整個基質來驅動沈積反應,就^二將 26 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公釐) { Ϋ--^讀背面之洼意事項再填笃本頁)ψ * D A &quot; In the typical application of Γ ′, and the resulting coating is divided into matrix materials, mixed with 5. Description of the invention (three times the depth of 25 material areas). In the method for processing a substrate according to the present invention, the other constituent element is chin, and the secondary element is nitrogen, carbon or butterfly is titanium nitride, carbide, or dioxin. Other applications of the technical method of the present invention (ie children, secondary sources, etc.) are within the scope and connotation of the present invention according to the feature of the present invention 'the energy irradiated on the substrate can be used to generate (or control) desire The physical pressure on the bell layer is produced, and by inducing such pressure in the book, the growth of the crystal can be controlled (promoted) to increase the growth rate better than the prior art method. According to the features of the present invention, the energy irradiated on the substrate can be used to read to form any desired configuration C structure on the surface of the substrate), which can be used as the final result (ie, after-situ finishing in situ) or for later Preparing the surface of the coating (i.e. pre-treating the surface) According to the features of the present invention, the secondary source includes a doping element as a secondary element. For example, diamond or M coatings can be used in semiconductor applications according to the features of the present invention. An electric bias can be applied to the substrate to press the substrate or the crystal growth direction on the formed coating. One advantage of the present invention is that it is not necessary to perform β under vacuum. However, the area of action of the substrate is most resistant to gas (for example, : Nitrogen or argon) to isolate. However, this does not mean that this method does not have to be completed under vacuum. This method or process can be used in conjunction with existing CVD and CVD-type methods to reduce the system. For example, it is not necessary to heat the entire Substrate to drive the deposition reaction, the paper size of 26 papers applies the Chinese National Standard (CNS) A4 specification (210 × 297 mm) {Ϋ-^ Read the meaning on the back (Fill in this page again)

經濟部中央標準局員工消費合作社印製 〇 A H 修成 +月日 ~S8.1ir8 —: 五、發明説明() 41 ,以及在基質表面上所製作的鍛層210。譬如說,可私行 (圖1的)製程步驟A ’ B,D及Έ來獲得處理後的基質 200。如上所述,副造材區206的厚度(d2)通常小於主 造材區的厚度(dl)’且其合成物質的濃度大於主造材區 β造材區的深度(d )總共為dl+d2=d 製作之鍍層的厚 度為“t”。 【多層鍍層(圖2B)】 圖2B為根據本發明之技術方法,根據圖1所述之一個 或以上的製程步驟所處理的典型處理基質220的橫斷面圖 。其中顯示具有頂部表面224的基質222,形成在基質表 面上且厚度為“tl”的第一鍍層226 (為便於說明,此圖 中略去主造材區及副造材區),形成在前述第一鍍層表面且 厚度為“1:2”的第二鍍層228,以及形成在第二鍍層228 頂部表面且厚度為“t3”的第三鍍層230。此一處理基質 220可由執行(圖1中的)製程步驟A,B,D,E及G 來獲得。 根據本發明的特徵,可輕易地製作出如圖2B中的多層 鍍層。譬如說:可由基質组成元素的组成來形成第一鍍層 226,並將第一副元素藉由副來源導入反應系統中;可由 第一鍍層226之組成元素的組成來形成第二鍍廣228 ’並 將第二副元素藉由副來源導入反應系统中;可由第二鍍層 228之紕成元素的組成來形成第三鍍層23〇 ’並將第三副 元素藉由副來源導入反應系统中。根據本應用,可製作出 具有預定材料组成的多層鍍層β -42 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐〉 — (請先閱讀背面之注意事項再填寫本頁j -訂- 經濟部中央標準局員工消費合作社印製 經濟部中央標準局負工消费合作社印装 m-u. s 立、發明説明() 26 能量施加(照射)於基質的所選區域上,且可以任何型態在 基質表面上掃描’以在基質上製作任何所需的“輪靡( 如:組成’厚度,形狀)或圖案。這可避免許多與加熱整 個基質有關的問題’且可提供以這些製法(不遮^基 所無法得到的結果。 本文將討論用以導入氣體形態的副元素以及導入隔絕 氣體之喷嘴的各撞設計(實施例)。 根據本發明,基質(工件)與能量來源(如··雷射)的 移動是相對的,以便於由橫跨基質表面的位置來控制造村 區的深度及基質上所製作之鍍層的厚度。 根據本發明’可藉由選擇強度,持續時間,輪廓以及 雷射光束的入射角來控制造材區的深度&quot;d&quot;使成為一選取 深度。 根據本發明,可控制此技術方法以在基質上製作一多 層式鍍層,其中每一層各有其所要的组成分。 根據本發明,可控制此技術方法以在基質内製造多個 造材區。 本發明優於現有鍍覆技術方法的優點,包括: •在基質選取(離散)區提供一連續作用系統; •所製作的組成可以是“真正的”異質磊晶及/或同 質磊晶;譬如說,製成的異質磊晶建構組成分可發展成同 質磊晶建構組成分(如:鍍層,或是當組成分為SP碳鍵 結之组成分時後續的鍍層本發明的方法允許材料在在 另一個底部材料上生長’而不限制其結晶方向,晶格結構 -27 - 本纸張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) (請先閱讀背面之;i意事項再填寫本頁) -3 後Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 〇 A H Revision + Month ~ S8.1ir8 —: V. Description of the invention () 41, and a forged layer 210 made on the surface of the substrate. For example, the process steps A'B, D, and rhenium (of FIG. 1) may be performed in private to obtain the processed substrate 200. As described above, the thickness (d2) of the secondary material area 206 is generally smaller than the thickness (dl) 'of the main material area and the concentration of the synthetic substance is greater than the depth (d) of the β material area of the main material area. d2 = d The thickness of the plated layer is “t”. [Multilayer Plating (FIG. 2B)] FIG. 2B is a cross-sectional view of a typical processing substrate 220 processed according to one or more of the process steps described in FIG. 1 according to the technical method of the present invention. A substrate 222 having a top surface 224 is shown, and a first plating layer 226 is formed on the surface of the substrate and has a thickness of “tl” (for ease of illustration, the main material area and the auxiliary material area are omitted in this figure), and are formed in the aforementioned first A second plating layer 228 with a thickness of "1: 2" on the surface of the plating layer, and a third plating layer 230 having a thickness of "t3" formed on the top surface of the second plating layer 228. Such a processing substrate 220 can be obtained by performing process steps A, B, D, E, and G (in FIG. 1). According to the features of the present invention, a multilayer plating layer as shown in Fig. 2B can be easily produced. For example, the first plating layer 226 can be formed by the composition of the constituent elements of the matrix, and the first secondary element can be introduced into the reaction system through the secondary source; the second plating layer 228 can be formed by the composition of the constituent elements of the first plating layer 226 The second secondary element is introduced into the reaction system through a secondary source; the third plating layer 23 ′ may be formed from the composition of the element formed in the second plating layer 228 and the third secondary element is introduced into the reaction system through a secondary source. According to this application, a multilayer coating with a predetermined material composition can be produced β -42-This paper size is applicable to China National Standard (CNS) A4 specifications (210X297 mm) — (Please read the precautions on the back before filling in this page j- Order-Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs, printed by the Central Standards Bureau of the Ministry of Economic Affairs, printed by the Consumers' Cooperatives, and the invention description () 26 Energy is applied (irradiated) on the selected area of the substrate and can be any Scanning on the surface of the substrate to make any desired "round (such as: composition, thickness, shape) or pattern on the substrate. This can avoid many problems related to heating the entire substrate" and can provide these methods ( Results that cannot be obtained without covering the substrate. This article will discuss the design of the nozzles used to introduce the secondary elements in the form of gas and the barrier gas (instance). According to the present invention, the substrate (workpiece) and the energy source (such as · · Laser) movement is relative, in order to control the depth of the village area and the thickness of the plating on the substrate by the position across the substrate surface. According to the present invention, the depth of the material area can be controlled by selecting the intensity, duration, profile, and incident angle of the laser beam to make it a selected depth. According to the present invention, this technical method can be controlled to control the A multi-layer plating layer is made on the surface, each of which has its own desired composition. According to the present invention, this technical method can be controlled to manufacture a plurality of building material regions in the matrix. The advantages of the present invention over the existing plating technology and methods Including: • Provide a continuous action system in the matrix selection (discrete) region; • The composition produced can be "real" heteroepitaxial and / or homoepitaxial; for example, the produced heteroepitaxial structural constituents Can be developed into homogeneous epitaxial constituents (eg, coatings, or subsequent coatings when the composition is divided into SP carbon-bonded constituents) The method of the present invention allows a material to grow on another bottom material without limiting its Crystallization direction, lattice structure-27-This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X 297 mm) (Please read the back of the page first; please fill out this page before filling in this page) -3 Rear

JJ

年月曰 五、發明説明() 44 上起動初始氣體反應(PGR )中扮演了主導的角色。在某 些情形中,激態原子雷射的角色可*由另一個雷射(如314 來輔助。 •三個雷射中的第二個314 (雷射2)主要是用來驅 動擴散功能(如:步驟B ),以及平衡熱氣體反應與氣相反 應的化學量。此一雷射最好為Nd:YAG雷射’而且通常是作 作為激態原子雷射之主導角色的支持角色在某種情況下 ,Nd:YAG雷射也可辅助蒸發組成元素,特別是在明亮(反 射)材料的情況時;此外,在某此情況下Nd:YAG雷射也可 扮演了主導的角色,而由激態原子雷射來辅助(即,對某 些基質及鍍層材料而言,激態原子與Nd:YAG雷射的角色可 互換)。一般來說,使用激態原子與Nd:YAG雷射來起動组 成物質的蒸發以平衡反應時,在兩個雷射之間的交互作用 會使此反應技術方法失去平衡〃在任何情況中使用兩個雷 射來辅助反應是較有利的&quot;譬如說,若要形成一金剛石薄 膜,則激態原子的較大電力與脈衝性能通常負貴起動此氣 相反應,且由Nd:YAG雷射來辅助。 經濟部中央標隼局員工消費合作社印製 •三個雷射中的第三個316 (雷射3),最好是C0 雷射,是用來平衡發生在基質表面上的熱、物理、氣體及 化學反應。C0雷射的基本角色是提供熱平衡,並避免在 反應氣體中產生熱的梯度。C0雷射也可提供氣體反應中 的最小溫度平衡,並影響反應溫度。①雷射也可提供發 生在基質表面之反應以及發生在基質表面上之氣體反應兩 者之間的協同作用。在某種情況下(即使用某些基質材料 -45 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐〉 27 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明( ,生長^向,材料,等等。換句說說,欲製作的材料不受 材料或是在其上欲製成此材料的基質的特性限制(無限制 )的; •當在表面上塗覆時,可藉由選擇適當的晶核物質以 及在基質材料上產生適當種類以進入初始汽相 (PVP) 的方 式,來形成任何晶格結構; •此方法可在沒有CVD製程,沒有真空狀態,以及沒 有靶材之情形下實施; .此製法可在周遭大氣狀沉下完成; •此製法可在不預先加熱基質的狀沉下執行; .此製法為連續的,且允許任何所望深度之組成分在 基質表面下形成,以及允許任何所需厚度之組成分在基質 表面上形成; •其鍵結較現有方法深,且可提供較大的黏著力; •其鍍層可在任何大小及形狀的基質上形成,包括非 吊大的基質。事實上本方法所形成的組成分厚度或面積並 沒有限制; 處理基質以形成金剛石或DLC表面的作業可在不影 響基質原來體積的情沉下完成。 光學(光束俾送)系統可介於雷射及基質表面之間, 以使雷射所放射的光束可集中或擴散或是作其它(如:輪 廓或維度)改變。 副元素可藉由許多習知的裝置,例如:噴鍍、散播、 沈積、熔除、或其它習知裝置,以及以任何合適的形態, (請先閲讀背面之注意事項再填寫本頁)Year, month, and fifth, Invention Description () 44 played a leading role in starting the initial gas reaction (PGR). In some cases, the role of an excimer laser can be assisted by another laser (such as 314. • The second 314 (laser 2) of the three lasers is mainly used to drive the diffusion function ( Such as: Step B), and balance the stoichiometry of the hot gas reaction and the gas phase reaction. This laser is best Nd: YAG laser 'and usually plays a supporting role as the leading role of the excimer atomic laser. In this case, Nd: YAG laser can also assist in the evaporation of constituent elements, especially in the case of bright (reflective) materials; in addition, in some cases Nd: YAG laser can also play a leading role, and by Excited atom lasers are used to assist (ie, for some substrates and coating materials, the roles of exciter atoms and Nd: YAG lasers are interchangeable). Generally speaking, exciter atoms and Nd: YAG lasers are used When the evaporation of the constituent materials is initiated to balance the reaction, the interaction between the two lasers will make this reaction technique out of balance. It is advantageous to use two lasers to assist the reaction in any case &quot; for example, To form a diamond film, exciton atoms Larger power and pulse performance are usually more expensive to start this gas phase reaction, and is assisted by Nd: YAG laser. Printed by the Consumer Cooperatives of the Central Bureau of Standards, Ministry of Economic Affairs • The third of the three 316 (laser) 3), preferably C0 laser, is used to balance the thermal, physical, gas and chemical reactions occurring on the surface of the substrate. The basic role of C0 laser is to provide thermal equilibrium and avoid thermal gradients in the reaction gas. C0 laser can also provide the minimum temperature balance in the gas reaction and affect the reaction temperature. ① Laser can also provide a synergy between the reaction that occurs on the substrate surface and the gas reaction that occurs on the substrate surface. In this case (ie using certain matrix materials -45-this paper size applies to Chinese National Standard (CNS) A4 specifications (210X 297 mm) 27 Printed by A7 B7, Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. Growth direction, material, etc. In other words, the material to be produced is not limited by the characteristics of the material or the substrate on which the material is to be made (unrestricted); • When coating on a surface Any lattice structure can be formed by selecting the appropriate nucleation material and generating the appropriate species on the matrix material to enter the initial vapor phase (PVP); • This method can be performed without a CVD process, without a vacuum state, and It is carried out without a target material. The manufacturing method can be completed by sinking in the surrounding atmosphere; The manufacturing method can be performed without sinking the substrate in advance; The manufacturing method is continuous and allows any component of the desired depth It is formed under the surface of the substrate, and allows components of any desired thickness to be formed on the surface of the substrate; • Its bonding is deeper than the existing methods and it can provide greater adhesion; • Its coating can be on substrates of any size and shape The thickness of the composition formed by this method is not limited; the operation of processing the substrate to form a diamond or DLC surface can be completed without affecting the original volume of the substrate. The optical (beam propagation) system can be located between the laser and the surface of the substrate, so that the beam emitted by the laser can be concentrated or diffused or otherwise changed (such as profile or dimension). The secondary elements can be used by many conventional devices, such as: spraying, spreading, deposition, melting, or other conventional devices, and in any suitable form, (please read the precautions on the back before filling this page)

I -28 - 經濟部中央標準局員工消費合作社印製 ---- . SB. 11 8 . ir 五、發明説明() 49 (如590線所示),而將副來源包圍並使之朝基質移動β 為了簡化喷嘴體552及554的操作,流道562及582是以 將凹槽延伸至各別喷嘴體之較低表面的方式來形成的。下 方嗔嘴,554的頂端表面與上方喷嘴體552的凹槽(流道 562 )密合’且具有中央通遒的環狀平面592與下方喷嘴 體554的凹槽(流道582 )密合。 【前處理(圖6Α,6Β)】 一般來說’事先製備欲施鍛層之表面對基質較有利。 可去除出現在表面上的研磨痕跡及污染物。磨光及化學# 刻是執行前處理的習知方法。一般來說,基質的化學蝕刻 必須處理一些危險的化學製品,並會產生有毒廢物,因而 導致基質鍍覆系統的複雜度的增加。此外,每一種基質组 成都需要各別的化學製品以執行此種蝕刻β根據本發明, 可使用已就位之用來製作鍍層的相同雷射來作為製備不同 型態之供製作鍍層的基質之用。 根據本發明之特徵,表面處理系统(如:3〇〇 )不只 可在基質表面上執行表面處理,也可用來執行前處理。一 般來說’相對於氣體而言,這只是控制雷射之製程參數的 問題。 圖6Α及6Β描述如何來進行關聯於本發明的表面處理 製程之基質的前處理。此前處理流程可在圖1所述之表面 處理製程之前或同時執行。 根據本發明,本發明的前處理技術方法可作為接下來 對於基質表面所作之鍍層製程(包括CVD法)的“先驅”。 -50 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) (請先閱讀背面之注意事項再填寫本頁) V mu fm n^— IT--! ---------------- 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(28 ) 例如:液體、氣體、固體、電漿、粉末等,來導入反應系 統中。 〜 譬如說,氣相副元素可使用增壓噴嘴(噴射管)來喷 入反應系統中,此噴嘴是設計用來傳送在另一種氣體(如 :銘氣)包圍氣氛中的氣相副元素,它可藉由位於嗔嘴( 喷射管)中之氣體的螺旋控制旋渦來集中(誘導奩 傳送。以此方式,則副元素可聚集於和入射能導二= 之基質選取區。 根據本發明的特徵,氣態副元素及包圍氣體皆可作為 反應作用中的副元素。 一把材(如•石墨源極)可包含在嗜嘴(噴射管)内 或外,且經由能量來源照射後,接著導入反應系統中。 副元素也可選來作為當製法中不需副元素時(例如: 製造流程的步驟C, F及H)的&quot;隔絕物”(隔絕環境,不必 使用真空),其中此副元素(及包圍氣體&gt;可為乾淨或产 性氣體。 —月 根據傳統用法,若材料在其自身上生長時,仍可保有 其底下基質的結晶現象,則稱為&quot;同質磊晶。不同材料在 基質上的生長,若仍保有基質的結晶方向則稱為“異質暴 晶”。在本文中,“真正的異質磊晶”是用來表示在底部不 同的材料上合成一個材料,但與結晶方向無關的情形,而 且可用來區別必須播灑材料作為種子否則便須提供成核場 所的系統(例如CVD或PVD系統),這些情形則稱為“ 質磊晶”。 〇 —2 9 一 本紙張尺度適用中國國家標準(CNS)从規格(210x297公釐) -------------|、玎 (請先閱讀背面之注意事項再填寫本頁)I -28-Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs ----. SB. 11 8. Moving β In order to simplify the operation of the nozzle bodies 552 and 554, the flow channels 562 and 582 are formed by extending the grooves to the lower surfaces of the respective nozzle bodies. The bottom surface of the mouthpiece 554 is in close contact with the groove (flow channel 562) of the upper nozzle body 552 and the annular plane 592 having a central opening is in close contact with the groove (flow channel 582) of the lower nozzle body 554. [Pretreatment (Fig. 6A, 6B)] Generally, it is advantageous for the substrate to prepare the surface to be forged in advance. Removes grind marks and contaminants that appear on the surface.磨光 和 化学 # 刻 is a known method for performing pre-processing. Generally, chemical etching of the substrate must deal with some hazardous chemicals and generate toxic waste, which leads to an increase in the complexity of the substrate plating system. In addition, each substrate composition requires a separate chemical to perform such an etching. According to the present invention, the same laser that is already in place for the coating can be used as a substrate for preparing different types of substrates for the coating. use. According to a feature of the present invention, a surface treatment system (such as 300) can be used not only to perform surface treatment on a substrate surface, but also to perform pretreatment. Generally speaking, relative to gas, this is only a matter of controlling the process parameters of laser. 6A and 6B illustrate how to perform a pretreatment of a substrate in connection with the surface treatment process of the present invention. The previous processing flow may be performed before or simultaneously with the surface processing process described in FIG. 1. According to the present invention, the pretreatment method of the present invention can be used as a "pioneer" for the subsequent plating process (including CVD method) on the substrate surface. -50-This paper size applies to Chinese National Standard (CNS) A4 (210X 297mm) (Please read the precautions on the back before filling this page) V mu fm n ^ — IT--! ------ ---------- A7 B7 printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the Invention (28) For example: liquid, gas, solid, plasma, powder, etc. to be introduced into the reaction system. ~ For example, gaseous secondary elements can be injected into the reaction system using a pressurized nozzle (jet tube). This nozzle is designed to transport gaseous secondary elements in an atmosphere surrounded by another gas (such as Ming gas). It can be concentrated (inducing tritium transmission) by a spiral-controlled vortex of the gas located in the mouthpiece (jet tube). In this way, the secondary elements can be gathered in the matrix selection area where the incident energy is two. = According to the invention Features, gaseous secondary elements and surrounding gas can be used as secondary elements in the reaction. A piece of material (such as graphite source) can be contained inside or outside the mouthpiece (jet tube), and then irradiated by the energy source, and then introduced In the reaction system, the secondary element can also be selected as the "insulator" (for example, steps C, F, and H of the manufacturing process) when the secondary element is not required in the manufacturing process (isolating the environment, and no need to use a vacuum). Element (and surrounding gas) can be clean or productive gas. — According to traditional usage, if the material can still maintain the crystallization of the underlying matrix when it grows on itself, it is called &quot; homogeneous epitaxy &quot; The growth of different materials on the substrate, if the crystallization direction of the substrate is still maintained, is called "heterogeneous crystals". In this article, "true heteroepitaxial" is used to indicate that a material is synthesized on different materials at the bottom, It has nothing to do with the direction of crystallization, and can be used to distinguish the system (such as CVD or PVD system) where the material must be sprayed as seeds or otherwise provide a nucleation site. These cases are called "mass epitaxy". 〇-2 9 1 This paper size applies the Chinese National Standard (CNS) from the specifications (210x297 mm) ------------- |, 玎 (Please read the precautions on the back before filling this page)

I 經濟部中央樣準局員工消費合作社印装 if λ 棘: 五、發明説明(ς1 ) 3丄 不變的,可重覆的)特性而更可容易控制。如圖6B所示, 一皮下層區延伸至深度d'已清除掉始。通常,這是上面所 述造材區的前驅體。圖11A及圖11B也是圖示前處理過程, 將於下文敘述。另外的製程參數的詳細情形將於下文所舉 實施例詳述。 除了使碳化鎢顆粒曝露及弄圓之外,本發明的前處理 過程尚能達成在基質的表面内部的冶金學上變化。譬如( 再就録燒結碳化嫣而論)具有1.0.0(100)結晶取向的金剛 石可形成,此金剛石將做為後續的在基質表面上形成金剛 石(或DLC)鍍層的過程用高度理想的晶核成形基台。再次 說明,這是與所採用鏡覆基質的方法無關,但對CVD法及 其類似方法非常有用。然而,使用本發明的鍍層形成過程 很顯然地將會造成協同效果及指數結果,因為同一個雷射 設備使用在前處理(準備,特性化)及處理(製成鍍層在)基 質上。此外,(再次,就鈷燒結碳化鎢基質而言)本發明前 處理過程對形成碳+氪化物+氯化鈷的複合物或前述之在 碳化鎢尖峰間的谷部排列取向非常有利,而這將非常適合 後續的鍍覆作業(或同時形成鍍層)。 [表面處理及前處理系統(圖7 )】 上文已對整個製法流程(圖1),三個雷射的使用(圖 3 ),副來源的導入(圖4,5,5A,5B)及前處理(圖6A、 6B)加以詳細說明0 圖7則描述一完整的表面處理系統700 ,使用配合圖 3所示三雷射過程,包括關於圖4所述及的導入一種或以 -52 - 本紙朵尺度適用中國國家標準(CNS ) A4规格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁)I Printed by the Consumer Cooperatives of the Central Procurement Bureau of the Ministry of Economic Affairs if λ thorn: V. Description of invention (ς1) 3 丄 Constant, repeatable characteristics and easier to control. As shown in FIG. 6B, a subcutaneous region extends to a depth d 'and has been cleared. Usually, this is the precursor of the construction area described above. 11A and 11B also illustrate the pre-processing process, which will be described later. Details of other process parameters will be described in detail in the following examples. In addition to exposing and rounding tungsten carbide particles, the pretreatment process of the present invention can achieve metallurgical changes inside the surface of the substrate. For example (recalling sintered carbide), diamonds with a crystal orientation of 1.0.0 (100) can be formed. This diamond will be used as a highly ideal crystal for the subsequent process of forming a diamond (or DLC) coating on the surface of the substrate. Nuclear forming abutment. Again, this is independent of the method used for mirror-coated substrates, but it is very useful for CVD and similar methods. However, the use of the coating formation process of the present invention will obviously result in synergistic effects and exponential results, because the same laser equipment is used for the pretreatment (preparation, characterization) and treatment (making the coating on) the substrate. In addition, (again, in the case of cobalt sintered tungsten carbide matrix), the pretreatment process of the present invention is very advantageous for forming a carbon + halide + cobalt chloride complex or the aforementioned valley alignment orientation between tungsten carbide peaks, and this Will be very suitable for subsequent plating operations (or at the same time forming a coating). [Surface treatment and pre-treatment system (Figure 7)] The above has been the entire manufacturing process (Figure 1), the use of three lasers (Figure 3), the introduction of secondary sources (Figure 4, 5, 5A, 5B) and Pre-processing (Figures 6A, 6B) is explained in detail. Figure 7 describes a complete surface processing system 700, which is used in conjunction with the three laser processes shown in Figure 3, including the introduction of one or -52-as described in Figure 4. The size of this paper is applicable to China National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling this page)

Is. 訂 sail. 5 扪 五、發明説明( 經濟部中央標準局員工消費合作社印製 29 本發明的技術方法可用來處理基質,以及在基質上作 任何材料之鑛層。 ; 本發明的技術方法可用來處理任何大小或形狀的基質 ’如:大的平坦片狀,大的成形片,活塞環,氣缸套,喷 霧嘴,長圓筒型元件的内壁,閥座等等。 本發明的技術方法可用來處理任何材料組成的基質, 包括超導(電)體材料。 本發明的方法為真正的異質磊晶,可允許在基質表面 或先已形成之鍍層上向任何方向上製作鍍層,包括&quot;£;,_形 狀的鍍層以及先垂直後平行延伸於基質表面的鍍層結構β 本發明的技術方法可在基質表面下製造一造材區,且 此造材區可作用為基質上製作之強化擴散鍵結鍍層的支禮。 比起在基質表面上形成鍛層如:金剛石鍵唐的方法, 本發明的技術方法可以習用被覆方法所無法達成的速率及 厚度來形成鐘層。譬如說,可以超過每小時l〇Q^m的速率 來製作,包括超過每分鐘1腿’每分鐘3咖及每分鐘1〇腿 。也可製作最終厚度(〇超過100总m的鍍層,包括超過 1 nun,3 mm 及 1〇 mm。 相對於處理基質以形成合成物質的造材區而古,本發 明的技術方法可以每小時30#m的速率及深度來&amp;成此一 造材區,包括超過每分鐘0.5 mm,每分鐘lfflm及每分鐘3咖 。也可製作最終深度(d)超過30—的造材區,包括超過 0 · 5mm,1 mm 及 3 咖。 本發明的方法為連續的,克服了習知製法中以批次處 30 本紙張尺度適用中國國家標準(CNS ) M規格(21〇χ297公釐) (請-聞讀背面之注意事項再填寫太頁) 、-&amp; 、發明説明() ' 84 藉由任一適當的技術方法鍍覆鍍層。 本發明可適用於種種基質,包*括金屬以及非金屬基質 (非金屬基質包括陶瓷以及聚合物基質)中任一種之處理。 可加以處理,或導入反應系統中之特定材料包括’但並不 限於: •金屬(B,Al,Ti,Nb,Ta,Cr,Mo,W,Re,Hf 等); •石墨以及碳化物〇34(:,3丨(:,1^(:,(:]:3(:2,(:,碳化給 等); .氮化物 •,W&amp;,t*(B,TaB2,TiB2,WB,FeB,NiB,,); •矽以及矽化物(Si,以及Mo,Fe,Ni之不同矽化物,等); •氧化物(Al203,Si0,Si02);以及 ’ •有機化合物(PTFE,訊夫拉(Kevlar),聚酸胺,液晶 聚合物,聚四酞酸乙酯。 如上所述’本發明技術方法之一優點為無需後加工處 理即可獲得理想的基質質地。紫外線雷射本身(舉例言之) ’僅藉控制其產生能量及照射時間,可用以熔除(燒钱)基 質而實質上獲得自粗糙至光學上平滑不等之各種質地β此 外藉採用本發明之技術方法,無需為基質選擇晶種(為 鍍層之後績生成),並具有控制晶體排列方向之空前能力 。更且,前處理以及後加工二步称均可就地進行(作為全 部過程之部分程序)。 於澱積技法之先前技術中,需行後加工步驟以獲一較 澱積作用所得更光滑之質地,例如,可使用一金剛砂磨料 五、發明説明( 30Is. Order sail. 5 扪 5. Description of the invention (printed by the Consumer Cooperatives of the Central Bureau of Standards, Ministry of Economic Affairs, 29. The technical method of the present invention can be used to treat substrates, and to make mineral layers of any material on the substrate.; Technical method of the present invention Can be used to process substrates of any size or shape, such as: large flat flakes, large shaped pieces, piston rings, cylinder liners, spray nozzles, inner walls of long cylindrical elements, valve seats, etc. Technical method of the present invention It can be used to process any material substrate, including superconducting (electric) bulk materials. The method of the present invention is a true heteroepitaxial crystal, which allows the coating to be made in any direction on the surface of the substrate or on the previously formed coating, including & quot £ ;, _-shaped coating and coating structure extending vertically and then parallel to the surface of the substrate β The technical method of the present invention can manufacture a building material area under the surface of the substrate, and the building material area can be used as a reinforcement made on the substrate Support for diffusion bonding plating. Compared with the method of forming a forged layer on the surface of the substrate, such as a diamond bond, the technical method of the present invention can be applied to the coating method. The clock layer can be formed at a rate and thickness. For example, it can be produced at a rate of more than 10Q ^ m per hour, including more than 1 leg per minute, 3 coffee per minute, and 10 legs per minute. It can also be made final Thickness (0 over 100 total m plating, including more than 1 nun, 3 mm, and 10 mm. Relative to the processing of the substrate to form a synthetic material production area, the technical method of the present invention can be used at a rate of 30 #m per hour. And depth to make this material area, including more than 0.5 mm per minute, lfflm per minute and 3 coffee per minute. It can also produce material areas with a final depth (d) of more than 30-, including more than 0.5 mm, 1 mm and 3 coffees. The method of the present invention is continuous, which overcomes the conventional method of batching 30 papers in accordance with the Chinese National Standard (CNS) M specification (21〇297 mm) (please-read the back) Please fill in the page for the matters needing attention),-&amp;, invention description () '84 Plating the coating by any appropriate technical method. The invention can be applied to various substrates, including metal and non-metal substrates (non-metals) Matrix including ceramic and polymer matrix) One kind of treatment. Specific materials that can be treated or introduced into the reaction system include, but are not limited to: • Metals (B, Al, Ti, Nb, Ta, Cr, Mo, W, Re, Hf, etc.); • Graphite And carbides 034 (:, 3 丨 (:, 1 ^ (:, (:): 3 (: 2, (:, carbonization, etc.); nitrides •, W &amp;, t * (B, TaB2, TiB2, WB, FeB, NiB ,,); • Silicon and silicides (Si, and different silicides of Mo, Fe, Ni, etc.); • Oxides (Al203, Si0, Si02); and 'Organic compounds ( PTFE, Kevlar, polyamide, liquid crystal polymer, polytetraphthalate. As mentioned above, one of the advantages of the technical method of the present invention is that a desired substrate texture can be obtained without post-processing. Ultraviolet laser itself (for example) 'Only by controlling its energy generation and irradiation time, it can be used to melt (burn money) the substrate and obtain substantially various textures ranging from rough to optically smooth β. In addition, the invention is adopted The technical method does not need to select seed crystals for the substrate (generated after plating), and has unprecedented ability to control the direction of crystal arrangement. Moreover, the two steps of pre-processing and post-processing can be performed in situ (as part of the overall process). In the previous technology of the deposition technique, a post-processing step is required to obtain a smoother texture than that obtained by the deposition. For example, an emery abrasive can be used. 5. Description of the invention (30

琿的限制》以本發明的技術方法可成功的處理維度 6吋的基質,包括超過8吋,超過1〇吋,超過3 超過100吋的。 ^ ^ 理基質以防止受賴,侵鱗 ,並可在整個基質或部分地區上製造一化學惰性表面。 本發明之低溫(不項先加熱)技術方法的優點為基質 可在處理過程中保有維度的穩定性,且不會喪失其底部的 硬度(如:鋼的彈性)〇 、 一般來說,金剛石或似金剛石碳鍍層(以及其他材料 的鍍層)可在基質上形成,而不須增加基質内原有材料( 如:碳成分元素)以外的材料》所形成的鍍層不只存在基 質表面上,也存在基質表面下,且其特性是依鍍層及基質 之間所形成的擴散鍵結而定。此製法也可用來形成一金剛 石鍍層’ DLC鍍層,或另一種結晶材料鍍層。此製法是唯 一可在周遭壓力下完成,而不須真空或高壓》此外’此製 法也可在不加熱基質的情況下完成。 本發明的表面處理技術方法可用來處理任何基質,包 括金屬及非金屬基質(非金屬基質包括陶瓷及聚合體基質 )。特殊材料也可處理或導入反應係統中,其中包括*但 不受限於: 經濟部中央樣準局員工消費合作社印裝 •金屬(Β,AL,Ti,Nb, Ta,Cr,Mo, W,Re 等); •石墨及碳化物(C,B4C,SiC, TiC,Cr3C2,WC,碳化 鈮,碳化給等); •氮化物(BN,TiN,TaN,Si3N4,氮化铪,氮化鋁等); 31 本紙張尺度適用中國國家標準(CNS ) A4规格(210X297公釐) 1 _ J · -'5? 一一 1. A7 \ - [ B7 五、發明説明(86 ) 經濟部中央標準局員工消費合作社印製 口 1752,一底開口 1754,以及一中央空腔1756係位於噴嘴 175〇之本體1·758之内。雷射能量(即,三道光束LI,L2, L3)可經噴嘴之頂開口 1752之導射,基質(圖未示)將置於 噴嘴之下。噴嘴1750具有二氣體入口 第一入口 1760用以 收容包括一含碳副元素(亦即,CO,co2,等)之氣體,以 及第二入口 1770用以收容惰性氣體(如上已述者)。 第一氣體入口 1760係與一環繞噴嘴1750本體1758外周 設置(亦即成環圈狀)之外管1212相通。含碳氣體被導入第 一氣體入口 176〇(於預定壓力下)並經由外管1762流至噴嘴 本體1758四周。數個内管1764大致呈輕射狀自外管1762延 伸進入噴嘴之空腔1756,以便將含碳氣體導入該嗜嘴空腔 内。内管I764宜往下向底開口 1754設置.,以便將含碳氣體 導向噴嘴1·750之底開口 1754,且隨後導向正進行金剛石或 DLC鍍層製造之基質。第二氣體入口 1770則與一環置於噴 嘴175〇本體1758周圍(亦即,成一環圈狀)之外管1772相通 。惰性氣體(於上已述及)被導入第二氣體入口 1770(於預 定壓力下)並經由外管1772流至嗜嘴本體1758四周。數個 内管1774大致呈輕射狀自外管1772延伸進入嗜嘴空腔1756 ,以便將含碳氣體引入噴嘴空腔。該等内管177 4可往下朝 底開口 1754設置,以便將惰性氣體導向噴嘴1750之底開口 ’並隨後導向正進行金剛石或DLC鍍層製造之基質。 一般言之,外管1762與1772係類似轉移模的澆道,而 內管1764與1114則係如同轉移模的澆口。 亦可如圖17C所示,内管1775(如同1774)係經噴嘴本 _ 8 7 _ 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁)限制 Limitations》 The technology of the present invention can successfully process substrates with dimensions of 6 inches, including more than 8 inches, more than 10 inches, and more than 3 more than 100 inches. ^ ^ Substrates can be protected from intrusion, scaling, and a chemically inert surface can be made on the entire substrate or part of the area. The advantage of the low temperature (not first heating) technical method of the present invention is that the substrate can maintain dimensional stability during processing without losing the hardness of its bottom (such as the elasticity of steel). Generally, diamond or Diamond-like carbon coatings (and coatings of other materials) can be formed on the substrate without adding materials other than the original materials (such as carbon components) in the substrate. The coating formed on the substrate is not only on the substrate surface, but also on the substrate surface. And its characteristics depend on the diffusion bond formed between the plating layer and the substrate. This method can also be used to form a diamond-plated layer 'DLC coating, or another crystalline material coating. This method is the only method that can be performed under ambient pressure, without the need for vacuum or high pressure. In addition, 'this method can also be performed without heating the substrate. The surface treatment method of the present invention can be used to treat any substrate, including metal and non-metal substrates (non-metal substrates include ceramic and polymer substrates). Special materials can also be processed or introduced into the reaction system, including * but not limited to: printed by consumers' cooperatives of the Central Prototype Bureau of the Ministry of Economic Affairs • Metals (B, AL, Ti, Nb, Ta, Cr, Mo, W, Re, etc.); • Graphite and carbides (C, B4C, SiC, TiC, Cr3C2, WC, niobium carbide, carbonized, etc.); • Nitrides (BN, TiN, TaN, Si3N4, hafnium nitride, aluminum nitride, etc.) ); 31 This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 1 _ J · -'5? 1-1 1. A7 \-[B7 V. Description of invention (86) Employees of the Central Bureau of Standards, Ministry of Economic Affairs The consumer cooperative print port 1752, a bottom opening 1754, and a central cavity 1756 are located in the body 1758 of the nozzle 175 °. Laser energy (i.e., three beams LI, L2, L3) can be directed through the top opening 1752 of the nozzle, and a substrate (not shown) will be placed under the nozzle. The nozzle 1750 has two gas inlets. The first inlet 1760 is used to contain a gas including a carbon-containing secondary element (ie, CO, co2, etc.), and the second inlet 1770 is used to contain an inert gas (as described above). The first gas inlet 1760 communicates with an outer tube 1212 arranged around the outer periphery of the nozzle 1750 body 1758 (that is, in a ring shape). The carbon-containing gas is introduced into the first gas inlet 176 (at a predetermined pressure) and flows around the nozzle body 1758 through the outer pipe 1762. A plurality of inner tubes 1764 extend from the outer tube 1762 into the cavity 1756 of the nozzle in a generally light shot to introduce a carbonaceous gas into the mouth cavity. The inner tube I764 should be arranged downward to the bottom opening 1754, so as to direct the carbon-containing gas to the bottom opening 1754 of the nozzle 1750, and then to the substrate being manufactured by diamond or DLC coating. The second gas inlet 1770 communicates with a ring 1772 which is placed around the nozzle 1750 body 1758 (that is, in a ring shape). The inert gas (as described above) is introduced into the second gas inlet 1770 (at a predetermined pressure) and flows through the outer tube 1772 to the periphery of the mouth-producing body 1758. Several inner tubes 1774 extend approximately lightly from the outer tube 1772 into the mouth cavity 1756 to introduce a carbon-containing gas into the nozzle cavity. The inner tubes 177 4 may be disposed downwardly toward the bottom opening 1754 so as to direct the inert gas toward the bottom opening of the nozzle 1750 ′ and then to the substrate undergoing diamond or DLC coating manufacture. Generally speaking, the outer tubes 1762 and 1772 are runners similar to transfer molds, while the inner tubes 1764 and 1114 are runners similar to transfer molds. As shown in Figure 17C, the inner tube 1775 (like 1774) is a nozzle. _ 8 7 _ This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling (This page)

經濟部中央標準局負工消費合作社印製 88,1L' δ 五、發明説明() 31 •硼及硼化物(B,TaB,TiB,WB,FeB,NiB 等); •矽及矽化物(Si,.及Mo, Fb,Ni等的不同矽化物); •氧化物(AL2〇3,SiO,Si〇s等);以及 •有機混合物(PTFE, Kevlar, Polymides,液態結晶 複合體,Polyethyltetrathalate 等)〇 根據本發明的特徵,基質可以用一個雷射預先處理( 以便於後績之鍍層製作)。譬如說,將激態原子雷射的光 束照射在破化鎢基質表面上,以去除研磨的痕跡及污染物 ,並去除基質表面上的銘。基質上其它冶金學上的改變可 在此一事先處理過程中輕易地完成,例如:將反應氣體加 入以改變表面的化學性質。 根據本發明的特徵,本發明的技術方法可用來快速成 型一個物體。一般來說,三維物體是以一連串已製作的鍍 層來“建造”的。 本發明的其他目的,特徵及優點可由下文中的說明得 知0 【圖式簡單說明】 本文中所附的圖示是用來說明並描述本發明之實施例 ,以解釋本發明的原理: 圖1為描述本發明技術方法的製法流程圖。 圖2A是以本發明之技術方法所處理(鍵覆)之基 質的部分橫斷面圖,其中特別描述了基質内之主要及副造 材區的形成。 圖2B是以本發明之方法所處理(鍍覆)之基質的部分 -32 - )( 210X297公釐) (-..-閱讀背面之:,±意事項再填芎本頁)88,1L 'δ printed by the Central Standard Bureau of the Ministry of Economic Affairs and Consumer Cooperatives V. Description of the invention () 31 • Boron and boride (B, TaB, TiB, WB, FeB, NiB, etc.); • Silicon and silicide (Si , And different silicides of Mo, Fb, Ni, etc.); • oxides (AL203, SiO, SiOs, etc.); and • organic mixtures (PTFE, Kevlar, Polymides, liquid crystal composites, Polyethyltetrathalate, etc.) 〇 According to the features of the present invention, the substrate can be pre-treated with a laser (for the subsequent coating production). For example, the laser beam of an excimer atom is irradiated on the surface of the broken tungsten substrate to remove grinding marks and contaminants, and to remove the inscription on the surface of the substrate. Other metallurgical changes on the substrate can be easily performed during this prior processing, such as adding reactive gases to change the surface chemistry. According to the features of the present invention, the technical method of the present invention can be used to quickly form an object. Generally, three-dimensional objects are "built" with a series of fabricated coatings. Other objects, features, and advantages of the present invention can be learned from the following description. [Simplified description of the drawings] The accompanying drawings are used to illustrate and describe the embodiments of the present invention to explain the principles of the present invention: 1 is a process flow chart describing the technical method of the present invention. Fig. 2A is a partial cross-sectional view of a substrate treated (bonded) by the technical method of the present invention, in which the formation of main and auxiliary material regions in the substrate is specifically described. Figure 2B is the part of the substrate treated (plated) by the method of the invention

87 體1759(如同1758)向下軸抖出至嗔嘴底部。 ,18係表示本發明之方法對二似CVD方法如何可作為 ^處理過程…基質_係置於真空環境(®示如一鐘 形罩)1804内。整個基質不經預熱處理,將射自能源18〇8 之能量光束1806照射於基質。能源18〇8可設於真空環境外 。結果,如圖所示能量光束18〇6會經由一適當窗口 1812進 入真空環境(即,進入鐘形罩)内β其餘為利用本發明作為 似CVD方法中一加工方法之要素已不需示於圖18,因^ 及其類似方法均眾所熟知。 圖19表示本發明另一實施例。依據本實施例,一靶材 1924 ’例如石墨’可容放於噴嘴192〇之外或之内,並由一 具有能量光束1928之能源1926加以照射。能源1926可藉 由利用必要之透鏡以及形成足夠之參數自能源19〇2導射。 既經因此證實本反應過程可如何加以完成、變化並控 制’顯然本發明之技術方法可利用於一基質上製造出變化 無窮之金剛石與DLC鍍層組成物以及幾何形狀(外形、輪 廓、等等)。以下之論述係意在加以說明而非加以限制。 按使用雷射以形成剛石或DLC鍛層係最近之大發現, 而僅為一般人概略知曉,於上文已簡短論及》 經濟部中央標隼局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 然而於本發明中’最好採用三個不同雷射之組合,卻 帶來令人驚異的效果’並係以前所未有之方式,於基質上 形成金剛石、DLC以及其他含碳鍍層,包括: •金剛石鍍層(Cx *其中χ係一晶體内之碳原子數); •似金剛石碳鐘層(Cx) ’顯示一 Sp /Sp之鍵合結構; - 88 - 本紙張尺度適用中國國家標準(CNS)A4規格(210x297公釐) 五、發明説明( 32 88.11 Λ' R- 經濟部中央標準局員工消费合作社印製 橫斷面圖’其中特別插述了基質表面上多層鍍層的形成。 圖3為根據本發明’實施基貧·表面處理之系統的實施 例之一般透視圖。 圖4為根據本發明,實施基質表面處理之系統的另一 實旅例之一般透視圖。 圖5為將次要元素導入本發明之基質處理系统的喷嘴 之實施例的横斷面圖。 圖5A及5B為將次要元素導入本發明之基質處理系統 的喷嘴之另一個實施例的頂端平面圖及橫斷面圖》 圖6A為根據習用方法之碳化鎢基質的橫斷面圖示》 圖6A為根據本發明之技術方法,對圖6A之碳化鎢基 質作事前處理後的橫斷面圖示。 圖7為根據本發明之基質處理系統的透視圖,其中3 個雷射將能量(光束)透過喷嘴來照射基質表面》 圖8為支撐在基座上擬根據本發明做表面處理之基質 的橫斷面圖,在此特別插述了可根據本發明之技術方法形 成的平面電漿。 圖9為根據本發明之系統(如:圖7的系統)的主要 部分的圖示說明。 •圖10為根據本發明之範例,描述圖7系統各個部分的 一連串操作過程。 圖10A、10B、10C及l〇D分別為根據本發明一實施例, 有關激態原子NchYAG及C0雷射之操作參數的圖示,圏表 及曲線。 、 - 33 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210x297公资〉 (詩先¾請背面之注意Ϋ項再填寫本I·) · - I I ! - I · 1 I -I ?1 I - X,-0 丨· Β4 1 07 3 58 Μ 鎮請委KJCRH: 後是否變更及實質内容 Α7 Β7 伙年Η: 經濟部中央標準局員工消費合作社印製 五、發明説明(以 主要部分代表符號說明 100 流程 220,220 處理基質 204,224,304,404,1304,1306,1308,1310,1326 基質之表面 300,400,700,800.900, 表面處理系統 BDS 光束傳送系統 330,430, 選取地區 500,550,722,1730,1750.1920 噴嘴 506 中央軸向通道 508 環狀體 El,Ε2,Ε3 雷射光束 510,520,530,561,580 入口 512,522,532,562,582, 環狀流道 514,524,534,564,584, 出口 BG 緩衝氣體 SS 副來源 SF 隔絕氣體 552,554,1734 噴嘴體 592 環狀平面 602 碳化鎢基質 630,634, 碳化鎢顆粒 723 軸心線 804 支座 808 突起 810,814 真空通道 1150,1206 造材(擴散)帶 1154,1204,1314,1316,1320,1324,1330,1554,1566 金剛石(或DLC)鍍層 1156 散亂零星(人造物) 1202(1202a,1202b,1202c,1202d) 矩形基質 1252 矩形透鏡 1262,1264,1266 電子光束 1270 聚集光成 -92 - (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度逋用中國國家標準(CNS ) Α4規格(210X297公釐) 88,11 5 Λ 五、發明説明() 33 經濟部中央標準局負工消費合作社印製 圖11A為在表面處理之前,現有碳化鎢基質表面的顯 微照片,其中顯示了研磨的痕跡及表面的污損。 圖11B為圖ha之碳化鎢基質表面在經過本發明之表 面處理過程的事前處理後的顯微照片。 圖11C為圓iiB之碳化鎢基質表面在經過本發明之表 面處理過程的鍵層處理後的顯微照片。 圖11D為圖lie之碟化鎢基質表面在經過本發明之表 面處理後所攝得的Raman光譜。 圖11E為圓lie之碳化鎢基質在經過本發明之表面處 理後的橫斷面顯微圖示。 圖11F為根據本發明之技術方法所製作之金剛石鍍層 的顯微照片,其中顯示了 1,〇,〇的結晶方向。 圖12A為根據本發明之範例,描述光束橫斷面及交會 處的詳細圖示》 圖12B為根據本發明之範例,描述正在作表面處理之 基質的側面圖示。 圖13A到13H為根據本發明,在基質上製作可裁製鍍 層的圖示〇 圖131為使用本發明之鍍覆技術方法來製作三維物體 的透視圖,圖中並展現了本方法中的真正異質磊晶性質。 圖14Α及14Β為根據本發明之技術方法處理長管狀之 基質的透視圖。 圖15Α及15Β為根據本發明之技術方法施以鍍層之球 狀軸承的横斷面圖》 -34 - 本紙張尺度適用中國國家標準(CNS ) Α4賴 ( 21〇Χ297公幻 (請先閱讀背面之·;ΐ意事項再填寫本頁) ο 、rn If n · 五、發明説明(92) 經濟部中央標準局員工消費合作社印製 1338,1340,1342,1344 鍍層部分 1352,1354,1356,1358,1360,1362 鍍層結構 1366 蛇形鍍層 1372a... 1372i 鍍層區段 1380 - 圓筒形鍍層 1384a,1384b 帶狀鍍層 1392 鍍層結構 tl, t2 高度 1402,1412 鍍覆管狀基質 1404,1806,1928 能量光束 1406,1416, 管狀基質的一個(開口)端 1408,1418 管狀基質的另一端 1410 拋物線反射面 1420 射流 1552,1562, 鋼珠轴承的組件 1600 鍍覆圓形刀具 1602,1622,1642,1662,1682 端銑刀 1604 一轴部 1606 一刀槽部 1608 一刀尖 1610,1630,1664,1684 電漿 1646 選定區(小斑點) 1732 噴嘴體 1734 轴向延伸孔 1752 頂開口 1754 底開口 1756 中央空腔 1758,1759, 噴嘴本體 1760,1770 第一、二入口 1762,1772 外管 1764,1774,1775 内管 1804 真空環境 1812 適當窗口 1924 輕材 —93 _ (請先閲讀背面之注意事項再填寫本頁) 本纸張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) &quot;---- sail g .A 7 --------- B ' 一 ___________ 五、發明説明() 一—— 一〜- 34 圖16A為根據本發明之典型實施例,描述正在 處理之圓柱形工具的側面圖。· 圈16B為根據本發明另一個典型實施例,插述正 表面處理之圓柱形工具的侧面圖。 圖16C及16D為根據本發明之又一個實施例,描述正 在作表面處理之圓柱形工具的侧面及頂端圖》 圖16E為根據本發明再一個典型實施例,描述正在作 表面處理之圓柱形工具的側面圖。 圖16F為根據本發明另一個典型實施例,描述正在作 表面處理之圓柱形工具的侧面圖。 圖17A為適合將次要元素導入反應系统之裝置的部分 橫斷面圖。 圖17B為根據本發明,將氣體導入反應系統之喷嘴的 部分切除透視圖。 圖17C類似圖17B之喷嘴的部分橫斷面圖。 圖18為描述本發明之製法如何辅助一似CVD方法的圖 示。 圖19為適合將次要元素導入反應系统之另一個裝置的 部分橫斷面圖 、,—裝----一--訂-----丨-線 / (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 -35 - 本紙張尺度適用巾國國家標準(CNS)以規板(21〇x297公楚) 經濟部中央猱S1局員二消费合作si印¾ 8a 1ί. 5 A7 B7 五、發明説明(34 -ί) 主要部分代表符號說明 100220,220 204,224,304,404,1304,1306,1308,1310,1'326 300,400,700,800,900, BDS 330,430, 500,550,722,1730,1750,1920 506 508 Ε1.Ε2.Ε3 510,520,530,561,580 512,522,532,562,582. 514,524.534,564,584, BG SS SF 552,554,1734 592 602 630,634. 723 804 808 810,814 1150,1206 1154,1204,1314,1316,1320,1324,1330,1554,1566 1156 1202(1202a,1202b,1202c,1202d) 1252 1262,1264,1266 - 1270 統統 道 面系系通 質粒 質表理送區 向束道體體 面基顆 基之處傳地 軸體光流氣源氣體平鎢皆線 程理質面束取臂央狀射口狀口衝來絕脅則制就4座起$#(亂1肷积^;1 流處基表光選噴中環雷入環出缓副隔噴環碳碳軸支突真造金散矩矩電聚 鍍物 C)造 DLCA 道綠Ϊ星質鏡束束 通β石零基遗光光 帶 層 {诗-κΐ,背云之---¾'項再填寫太頁) ©--- 、-= -35 - 1 - 本纸張尺度適用中國國家標準(CNS ) A4说格(210X297公釐) mA.i A7 B7 五、發明説明(34_2) 經濟部中央揉準局男二消費合作乜印- 1338,1340,1342,1344 1352,1354,1356,1358,1360,1362 1366 1372a... 1372i 1380 1384a,1384b 1392 tl, t2 1402,1412 1404,1806,1928 1406,1416, 1408,1418 1410 1420 1552,1562, 1600 1602,1622,1642,1662.1682 1604 1606 1608 1610,1630,1664,1684 1646 1732 1734 1752 1754 1756 1758,1759, 1760,1770 1762,1772 1764.1774,1775 ' 1804 1812 1924 鍍層部分 鍍層結構 蛇形鍍層 鍍層區段 圓筒形鍍層 帶狀鍍層 鍍層結構 高度 鍍覆管狀基質 能量光束 管狀基質的一個(開口)端 管狀基質的另一端 拋物線反射面 射流 鋼珠袖承的組件 鍍覆圓形刀具 端銑刀 一杨部 一刀槽部 一刀尖 電漿 選定區(小斑點) 噴嘴體 袖向延伸孔 頂開口 底開口 中央空腔 噴嘴本體 第一、二入口 外管 内管 真空環境 適當窗口 耙材 (請先聞讀膂云之注意事項具填寫本頁)87 Body 1759 (like 1758) shakes down to the bottom of the pout. The 18 series shows how the method of the present invention can be used as a processing method for the two similar CVD methods ... The substrate is placed in a vacuum environment (® shown as a bell-shaped cover) 1804. The entire substrate is not preheated, and an energy beam 1806 from an energy source 1808 is irradiated onto the substrate. Energy 1808 can be set outside the vacuum environment. As a result, as shown in the figure, the energy beam 1806 enters the vacuum environment (ie, enters the bell jar) through an appropriate window 1812. The remaining β is an element that utilizes the present invention as a processing method in the CVD-like method and is not required Figure 18 is well known because it is similar. Fig. 19 shows another embodiment of the present invention. According to this embodiment, a target material 1924 'such as graphite' can be accommodated outside or inside the nozzle 1920 and irradiated by an energy source 1926 having an energy beam 1928. The energy source 1926 can be guided from the energy source 202 by using necessary lenses and forming sufficient parameters. Once it is thus proved how the reaction process can be completed, changed and controlled, it is obvious that the technical method of the present invention can be used on a substrate to produce infinitely variable diamond and DLC coating compositions and geometric shapes (shape, contour, etc.) . The following discussion is intended to be illustrative and not restrictive. According to the recent discovery of the use of lasers to form a diamond or DLC forging layer, it is only known to the general public. It has been briefly discussed above. Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the back Note: Please fill out this page again) However, in the present invention, 'the combination of three different lasers is best, but it has amazing results' and it is unprecedented to form diamond, DLC and other materials on the substrate. Carbon coatings, including: • diamond coatings (Cx * where χ is the number of carbon atoms in a crystal); • diamond-like carbon clock layers (Cx) 'shows a Sp / Sp bond structure;-88-this paper size applies China National Standard (CNS) A4 specification (210x297 mm) V. Description of the invention (32 88.11 Λ 'R- Cross-section view printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs' which specifically interpolates the multilayer coating on the surface of the substrate Formed. Fig. 3 is a general perspective view of an embodiment of a system for performing base-surface treatment according to the present invention. Fig. 4 is another practical example of a system for performing substrate surface treatment according to the present invention. Perspective view. Figure 5 is a cross-sectional view of an embodiment of a nozzle for introducing a minor element into a substrate processing system of the present invention. Figures 5A and 5B are another embodiment of a nozzle for introducing a minor element into a substrate processing system of the present invention. Top plan view and cross-sectional view of the example "Fig. 6A is a cross-sectional view of a tungsten carbide substrate according to a conventional method" Fig. 6A is a cross-sectional view of the tungsten carbide substrate of FIG. 6A after pretreatment according to the technical method of the present invention Sectional view. Figure 7 is a perspective view of a substrate processing system according to the present invention, in which three lasers illuminate the surface of the substrate through a nozzle ("beam"). A cross-sectional view of the treated substrate, in particular a planar plasma that can be formed according to the technical method of the present invention is shown here. Figure 9 is a diagram of the main parts of a system according to the present invention (such as the system of Figure 7). Explanation. • Figure 10 is an example of the present invention, describing a series of operation processes of each part of the system of Figure 7. Figures 10A, 10B, 10C, and 10D are examples of the excited state atoms NchYAG and CO, respectively, according to an embodiment of the present invention. Laser operating parameters: diagrams, tables and curves.--33-This paper size applies to China National Standard (CNS) A4 specifications (210x297 public capital) (Poetry ¾ Please note the items on the back before filling in this I · )--II!-I · 1 I -I? 1 I-X, -0 丨 · Β4 1 07 3 58 Μ Town commissioner KJCRH: Whether it will be changed in the future and its substance Α7 Β7 Year of work: Central Bureau of Standards, Ministry of Economic Affairs Printed by the employee's consumer cooperative V. Description of the invention (explained by the main part of the symbol 100 process 220, 220 treatment substrate 204, 224, 304, 404, 1304, 1306, 1308, 1310, 1326 surface of the substrate 300, 400, 700, 800.900, surface treatment system BDS beam delivery system 330, 430, selected area 500, 550, 722, 1730,1750.1920 Nozzle 506 Central axial channel 508 Toroidal body El, E2, E3 Laser beam 510,520,530,561,580 Inlet 512,522,532,562,582, Toroidal flow channel 514,524,534,564,584, Outlet BG Buffer gas SS Deputy source SF Isolate gas 552,554,1734 Nozzle body 592 Toroidal plane 602 tungsten carbide matrix 630,634, tungsten carbide particles 723 axis line 804 support 808 protrusion 810,814 vacuum channel 1150,1206 Materials (diffusion) belts 1154,1204,1314,1316,1320,1324,1330,1554,1566 Diamond (or DLC) coating 1156 Scattered (artificial) 1202 (1202a, 1202b, 1202c, 1202d) Rectangular substrate 1252 Rectangular lens 1262, 1264, 1266 Electron beam 1270 Focusing light into -92-(Please read the precautions on the back before filling this page) This paper uses the Chinese National Standard (CNS) Α4 specification (210X297 mm) 88,11 5 Λ V. Description of the invention (Printed by 33) Printed by the Central Laboratories of the Ministry of Economic Affairs and Consumer Cooperatives Figure 11A is a photomicrograph of the surface of the existing tungsten carbide substrate before surface treatment, which shows the traces of grinding and the surface Defaced. Fig. 11B is a photomicrograph of the surface of the tungsten carbide substrate of Fig. Ha after the pre-treatment of the surface treatment process of the present invention. Fig. 11C is a photomicrograph of the surface of the tungsten carbide substrate of the circle iiB after the bond layer treatment of the surface treatment process of the present invention. Fig. 11D is a Raman spectrum taken on the surface of the tungsten carbide substrate of Fig. Lie after the surface treatment of the present invention. Fig. 11E is a cross-sectional micrograph of a tungsten carbide matrix having a circular lie after the surface treatment of the present invention. Fig. 11F is a photomicrograph of a diamond coating layer made according to the technical method of the present invention, in which the crystalline direction of 1, 0, 0 is shown. Fig. 12A is a detailed diagram depicting a beam cross section and an intersection according to an example of the present invention. "Fig. 12B is a side diagram depicting a substrate being surface-treated according to an example of the present invention. Figures 13A to 13H are diagrams of making a tailorable coating on a substrate according to the present invention. Figure 131 is a perspective view of a three-dimensional object made using the plating technology method of the present invention, and the figure shows the true Heterogeneous epitaxial nature. Figures 14A and 14B are perspective views of a long tubular substrate treated according to the method of the present invention. Figures 15A and 15B are cross-sectional views of a ball bearing coated with a coating according to the technical method of the present invention. "-34-This paper size applies Chinese National Standards (CNS) Α4 赖 (21〇 × 297 公 幻 (please read the back first) (Please fill in this page for any matters you want) ο rn If n · V. Description of invention (92) Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs 1338, 1340, 1342, 1344 Coating parts 1352, 1354, 1356, 1358 , 1360,1362 coating structure 1366 serpentine coating 1372a ... 1372i coating section 1380-cylindrical coating 1384a, 1384b strip coating 1392 coating structure tl, t2 height 1402, 1412 coated tubular substrate 1404, 1806, 1928 energy Beams 1406, 1416, One (open) end of the tubular substrate 1408, 1418 The other end of the tubular substrate 1410 Parabolic reflecting surface 1420 Jet 1552, 1562, Components of a steel ball bearing 1600 Coated round tools 1602, 1622, 1642, 1662, 1682 End mill 1604 One shaft part 1606 One sipe part 1608 One tool tip 1610, 1630, 1664, 1684 Plasma 1646 Selected area (small spots) 1732 Nozzle body 1734 Axial extension hole 1752 Top opening 1754 Bottom opening 1756 Center Cavities 1758, 1759, Nozzle body 1760, 1770 First and second inlets 1762, 1772 Outer tubes 1764, 1774, 1775 Inner tubes 1804 Vacuum environment 1812 Appropriate window 1924 Light materials — 93 _ (Please read the precautions on the back before filling this Page) This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) &quot; ---- sail g .A 7 --------- B '一 ___________ 5. Description of the invention ( ) A-one ~-34 Figure 16A is a side view describing a cylindrical tool being processed according to a typical embodiment of the present invention. · Circle 16B is a cylinder according to another exemplary embodiment of the present invention, interpolating a front surface treated cylinder Figs. 16C and 16D are side and top views of a cylindrical tool being surface-treated according to another embodiment of the present invention. Fig. 16E is a further exemplary embodiment of the present invention. Side view of a surface-treated cylindrical tool. Fig. 16F is a side view illustrating a cylindrical tool being surface-treated according to another exemplary embodiment of the present invention. Fig. 17A is a partial cross-sectional view of an apparatus suitable for introducing a minor element into a reaction system. Fig. 17B is a partially cutaway perspective view of a nozzle for introducing gas into a reaction system according to the present invention. Fig. 17C is a partial cross-sectional view of the nozzle similar to Fig. 17B. Fig. 18 is a diagram describing how the manufacturing method of the present invention assists a CVD-like method. Fig. 19 is a partial cross-sectional view of another device suitable for introducing minor elements into the reaction system, ------------------------- line-(Please read the precautions on the back first (Fill in this page again.) Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs -35-This paper is applicable to the national standards (CNS) of the country. (21 × 297) ¾ 8a 1ί. 5 A7 B7 V. Description of the invention (34-ί) Description of the main part of the symbol 100220,220 204,224,304,404,1304,1306,1308,1310,1'326 300,400,700,800,900, BDS 330,430, 500,550,722,1730,1750,1920 506 508 Ε1.Ε2.Ε3 510,520,530,561,580 512,522,532,562,582. 514,524.534,564,584, BG SS SF 552,554,1734 592 602 630,634. 723 804 808 810,814 1150,1206 1154,1204,1314,1316,1320,1320,1320,156 1202a, 1202b, 1202c, 1202d) 1252 1262, 1264, 1266-1270 All the road surface systems pass through the plasmid surface and send the area to the decent body of the beam channel to transmit the ground axis optical flow gas source gas flat tungsten all threads The physical surface beam takes the center of the arm and shoots into the mouth. Starting from $ # (random 1 肷 ^^ 1) The base surface light selective spraying in the base of the stream, the ring in and out of the ring, the slow sub-split ring, the carbon and carbon axons, the true gold, the dispersion of the moment, and the moment of electroplating C) DLCA Road Green Astral Mirror Beam Passing β Stone Zero-Based Remaining Light Band Zone {Poem-κΐ, Behind the Cloud --- ¾ 'item and fill in the page too) © --- 、-= -35-1-This paper size Applicable to the Chinese National Standard (CNS) A4 grid (210X297 mm) mA.i A7 B7 V. Description of the invention (34_2) Seal of male second consumer cooperation of the Central Bureau of the Ministry of Economic Affairs-1338,1340,1342,1344 1352,1354 , 1356,1358,1360,1362 1366 1372a ... 1372i 1380 1384a, 1384b 1392 tl, t2 1402,1412 1404,1806,1928 1406,1416, 1408,1418 1410 1420 1552,1562, 1600 1602,1622,1642, 1662.1682 1604 1606 1608 1610, 1630, 1664, 1684 1646 1732 1734 1752 1754 1756 1758, 1759, 1760, 1770 1762, 1772 1764.1774, 1775 '1804 1812 1924 Plating section coating structure Snake coating Plating section cylindrical coating strip Plating structure Highly plated tubular substrate Energy beam One side (open) end of the tubular substrate Parabolic reflective surface Jet steel ball sleeve sleeve components of the tubular substrate Tool end mill-Yang part, Slot part, Tip tip plasma selected area (small spots) Nozzle body sleeve extends to the top of the hole, bottom opening, central cavity, nozzle body, first and second inlet, outer tube, inner tube, vacuum environment, appropriate window, (Please read Jinyun's notes first and complete this page)

35-2 本纸法尺度適用中國國家標準(CNS ) A4规格(210X297公釐.) 五、發明説明( 3535-2 The size of the paper method is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm.) V. Description of the invention (35

經濟部中央標準局員工消費合作社印製 【詳細說明】 在本文中’“表面處理,’ 一詞表示改變基質的冶金性 質’包括在基質表面上或已施以鍍層之表面上“製作”一 盾或多層的鍍(覆)層,以及改良基質表面下之副表面區域 (“造材”或“轉移”區)的基質組成分。其中描述了兩 個表面處理“體系”,一個是《前處理,’體系,這是以適 合的鍍覆技術方法來處理基質以便接受後續的鍍覆作業; 另一個是‘‘鍍覆”體系,這是在基質表面上製成鍍層的作 業。在本文中’ “基質”一詞包括平面形或圓柱形切削工 具’且可用於需要表面處理之物體的選取區上。一般來說 ,本發明的鍍覆技術方法包括由基質中分離出“紕成,,( 或‘‘主要”)元素,或與此“組成”元素起反應,接著立 刻在此基質表面上的“反應區”内使其反應;視必要將“ 次要元素”選擇性地由“次要來源”導入以增大此反應; 並將‘‘合成材料”(反應後的材料,具有含相位等物理結 構,業經改造,改質’改變,及/或材料内已有另一種或 多種元素加入)擴散回基質。以此種方式,則轉移區域内 然會有合成物質的Μ人工製品”及/或製成的鍍層材料, 且所製成之鍍層將以擴散鍵結至基質上。 其它細節可參閱配合附圖所示各例之本發明的較佳實 施例之說明而了解。本發明雖將舉較佳實施例來說明,但 所述之實施例並不代表限制性。相反的,本發明之範圚是 由下文所載申請專利範園所界定,且任何涵蓋在本發明之 内涵及範圍内之變更,皆應視為包括在本發明之範圍内。 下文中,將討論在碳化鎢切削工具插入物上製作金剛 36 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公漦) 〆裝 訂 〆. V (請先聞讀背面之注意事項再填寫本頁)Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs [Details] In this article, the term "" surface treatment, "means changing the metallurgical properties of the substrate" includes "making" a shield on the surface of the substrate or on the surface that has been coated Or multi-layer plating (cladding), and the improvement of the matrix composition of the subsurface area ("material" or "transfer" area) under the surface of the substrate. Two surface treatment "systems" are described, one is "pretreatment , 'System, this is a suitable plating technology method to treat the substrate in order to accept subsequent plating operations; the other is a "plating" system, which is the operation of making a coating on the surface of the substrate. The term &quot; matrix &quot; includes a planar or cylindrical cutting tool herein and can be used on a selection of objects that require surface treatment. Generally, the plating method of the present invention includes separating or forming "elements", (or "main") elements from a substrate, or reacting with the "constituent" elements, and then immediately on the surface of the substrate, the " "Reaction zone" to make it react; if necessary, "secondary elements" are selectively introduced from "secondary sources" to increase the reaction; and "synthetic materials" (reacted materials, which have physical properties such as phase) Structure, modified, 'modified', and / or another material or materials added to the material) diffuse back into the matrix. In this way, there will be synthetic artefacts in the transfer area "and / or The produced plating material, and the produced plating layer will be bonded to the substrate by diffusion bonding. Other details can be understood by referring to the description of the preferred embodiment of the present invention in conjunction with the examples shown in the drawings. Although the present invention will be described with reference to preferred embodiments, the embodiments described are not meant to be limiting. On the contrary, the scope of the present invention is defined by the patent application park set forth below, and any changes covered by the meaning and scope of the present invention shall be deemed to be included in the scope of the present invention. In the following, the production of King Kong 36 on tungsten carbide cutting tool inserts will be discussed. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 × 297 cm) 〆Binding〆. V (Please read the precautions on the back before filling in this page)

五、發明説明() 36 經濟部中央標準局員工消費合作社印製 石鍍層的主要範例。然而,很顯然的,本發明並不受限於 這些材料〇 , : 、 【製成流程圖(圖1)】 圖1為根據本發明所實施之技術方法的整個流程100 之流程圖。一般來說,這些技術方法包括在基質表面上照 射雷射能量(最好為三個不同的雷射)以驅動建構在組成~ 分(元素)上的反應系統’並將位在適當接合點上的副成分( 元素)導入反應系統中。很明顯的,此製程可從各種不同的 方向來進行,也可在製造流程的不同點上終止。 在第一製程步驟(步驟A)中’雷射能量是用來: •以一種或多種速率,賦與位在基質表面下區域的一 種或以上的組成分可動性,並將此一種或以上的組成元素 朝向基質表面移動,以產生表面下區域之一種或以上的组 成元素的濃度梯度; •以控制方式分離(從基質内的其他材料分離)並蒸 發該一種或以上之組成元素的選取部分的選取量;以及“ •當初步氣體反應(PGR)在基質表面上發生時,立刻 對蒸發之一種或以上的組成元素作反應,以改質蒸發之— 種或以上的組成元素的物理結構及特性《»經改質與未經改 質之组成元素的結合為“合成村物”。此步称(步驟A ) 主要是為基質做其它進一步處理(如步驟B所述)作準備 。此製程也可在此階段终止’如步驟Η所示。 在製程步驟Β中,合成物質擴散至基質表面,以製造 由基質表面延伸至基質的&quot;造材區這主要是由PQR中的 較高濃度合成物質被動擴散至基質中的較低濃度合成物質 -37 -V. Description of the Invention (36) The main examples of stone coatings printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs. However, it is obvious that the present invention is not limited to these materials. [,] [Making flow chart (Fig. 1)] Fig. 1 is a flowchart of the entire process 100 of the technical method implemented according to the present invention. Generally speaking, these technical methods include irradiating laser energy (preferably three different lasers) on the surface of the substrate to drive the reaction system built on the composition ~ element (element) and place it at the appropriate junction The secondary components (elements) are introduced into the reaction system. Obviously, this process can be carried out from various directions, or it can be terminated at different points in the manufacturing process. In the first process step (step A), the 'laser energy is used to: • impart mobility to one or more constituents located in a region below the surface of the substrate at one or more rates, and The constituent elements move towards the surface of the substrate to produce a concentration gradient of one or more constituent elements in the subsurface area; • Separated in a controlled manner (separated from other materials in the matrix) and evaporates the selected portion of the one or more constituent elements The amount selected; and "• When the preliminary gas reaction (PGR) occurs on the surface of the substrate, immediately react the evaporated one or more constituent elements to modify the physical structure and characteristics of the evaporated one or more constituent elements "» The combination of the modified and unmodified components is a "synthetic village." This step (step A) is mainly to prepare other further processing of the substrate (as described in step B). This process also It can be terminated at this stage 'as shown in step Η. In process step B, the synthetic substance diffuses to the surface of the substrate to make a &quot; fabrication &quot; that extends from the surface of the substrate to the substrate. This area is mainly a passive diffusion of the higher concentration of PQR synthetic matrix to lower concentrations synthetic -37--

(請-^請^-之法意事項再填穹大二貝)(Please-^ Please ^ -For the legal and Italian matters, fill in the second big shell)

本紙張尺度適用中國國家標準(CNS ) Α4規格(210X297公釐) 紙U. 5 五、發明説明() 37 的製程。此一製程接著可往兩個方向前進(下文所述的步 驟C及D)。 ' 在製程步驟C中,此製程可在已成功地形成具有控制 濃度之合成物質的造材區時終止。譬如說,造材區内的合 成物質可為金鋼石或DLC。一般的情形中,合成物質的製 作及至造材區的擴散不會改變基質的體積。 另一方面,相對於步驟C而言,在製程步驟D中,也 可對造材區内的合成物質重複地作移動、蒸發及反應各步 驟(類似步驟A的方式),或是對基質之一種或以上之组 成元素作移動、蒸發及反應,或是兩者都作,以再次處理 造材區。在造材區内再次處理合成物質的情況中,此製程 可獲得協同作用且將以更大的速率(如,指數增加)來進 行。重複此製程以達到基質表面之合成材料的任何理想濃 度’以及造材區内合成材料的任何理想梯度。 在製程的這個點上,可在基質表面上製作鍍層〇此一 鍍層’或造成之材料,和造材區上的鍍層具有完全不同的 化學性質》為製作此鍍層,將副來源導入(步驟E)或不 導入(步驟F)系統中均可。 經濟部中央標準局貝工消費合作社印裝 {碕先閱讀背面之:丄意事項再填寫本頁) 在製程步驟E中,激化“副”來源(基質本身視為“ 主來源)以將一種或以上之“副”元素(基質上之一種 或以上的组成元素視為“主”元素)導入反應系統中。在 此情形中,使用能量來源以在基質表面上製作合成之鍍層 組成物(例如:金剛石或似金剛石碳)β合成之鍍層组成 是包含一種或以上的副元素與合成材料(其中可為相同或 不同的材料)所製作出的材料〇 -38 - 本紙張尺度適用中國國家標準(CNS) Α4規格(21〇χ297公釐) 經濟部中央標準局負工消費合作社印掣 一^、發明说明() &gt; 38 如上所述(如:步驟D )’ 一,材區可在基質表面下 形成。此造材區可包含一主造材區'以及位在主造材區與基 質表面間的副造材區。一般而言’副造材區的深度小於主 造材區,且一個或以上之副造材區的濃度會大於主造材區 。關聯於主造材區,副造材區提供了後續之在基質上製作 鍍層有關之相對鍵結、支撐以及壓力分佈等重要功能。造 材區(主與副)對於界定其後之在基質上製作鍍層(如果 有)所需之鍵結、支撐以及壓力分佈有關的參數有全面性 地影響。以此種方式,在基質表面下會形成深度為“d” 的造材區,且在基質表面上可製作厚度為“t”的鍍層材 料。 譬如說,在鋼或燒結碳化物基質上製作大约3麵(毫 米)厚的金剛石層(鍍層),則主造材區大約為0.75mm深 ,副造村區大約0.25mm厚0 另一方面,相對於步驟E而言,在製程步驟F中,並 不將副來源注入系統中,而是將造材區中的少量合成材料 移動、蒸發及反應(以類似步驟A的方式)以形成基質下 的副造材區,它可再一次反應(利用能量來塬)以形成基 質的鍍層。這可在基質上製作一個比使用副來源所製作的 鍍層(步驟E)還要薄的鍍層。然而,必須是基質本身有 足夠的组成元素,可供在基質表面上製作厚的鍍層(步驛 F)為原則。 譬如說’在鈷母體中使用碳化鎢(如:92%)之基質 ’則能量來源會使得鎢與碳化物游離成鎢及碳的形式,而 且破會成為在基質上製作金剛石或DLC鍍層的組成元素( -39 - 本紙張尺縣(CNS ) A4規格(2iQx297公楚)- (請先閱請背而之注意事項再填寫本頁)This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) paper U. 5 V. Description of invention () 37 process. This process can then proceed in two directions (steps C and D described below). 'In process step C, this process may be terminated when a material zone having a controlled concentration of a synthetic substance has been successfully formed. For example, the synthetic material in the material area can be diamond or DLC. In general, the production of synthetic materials and diffusion into the material area do not change the volume of the matrix. On the other hand, compared to step C, in the process step D, the steps of moving, evaporating, and reacting the synthetic material in the material area can be repeated (similar to the method of step A), or the substrate One or more constituent elements are moved, evaporated, and reacted, or both, to reprocess the material area. In the case where synthetic materials are processed again in the material area, this process can achieve synergy and will proceed at a greater rate (eg, exponential increase). This process is repeated to achieve any desired concentration of synthetic material &apos; on the surface of the substrate and any desired gradient of synthetic material in the material area. At this point in the process, a coating can be made on the surface of the substrate. This coating 'or the material it creates has completely different chemical properties than the coating on the material area. "To make this coating, introduce a secondary source (step E ) Or not imported (step F) into the system. Printed by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economics {阅读 Read the back: Intentional matter before filling out this page) In process step E, the “secondary” source (the matrix itself is regarded as the “primary source”) The above "secondary" elements (one or more of the constituent elements on the substrate are considered "primary" elements) are introduced into the reaction system. In this case, an energy source is used to make a synthetic plating composition on the surface of the substrate (for example: Diamond or diamond-like carbon) β-synthetic coating composition is a material made of one or more secondary elements and synthetic materials (which can be the same or different materials) 〇-38-This paper size applies to Chinese national standards (CNS ) Α4 specification (21 × 297 mm) Central Government Bureau of Standards, Ministry of Economic Affairs, Consumer Cooperatives Co., Ltd. ^, Description of Invention () &gt; 38 As described above (eg, step D) ', the material area can be below the surface of the substrate Formed. This building area can include a main building area 'and a secondary building area located between the main building area and the surface of the substrate. Generally, the depth of the' sub building area is smaller than the main building area, and The concentration of one or more auxiliary material areas will be greater than the main material area. Related to the main material area, the auxiliary material area provides important functions such as relative bonding, support and pressure distribution related to subsequent plating on the substrate. The material area (primary and secondary) has a comprehensive influence on the parameters related to the bonding, support and pressure distribution required to define the subsequent coating (if any) on the substrate. In this way, on the substrate surface A depth of “d” will be formed below, and a coating material with a thickness of “t” can be made on the surface of the substrate. For example, approximately 3 sides (mm) of diamond are made on a steel or sintered carbide substrate. Layer (plating), the main material area is about 0.75mm deep, and the secondary village area is about 0.25mm thick. On the other hand, compared with step E, in process step F, the secondary source is not injected into the system. Instead, a small amount of synthetic material in the material area is moved, evaporated, and reacted (in a manner similar to step A) to form a secondary material area under the substrate, which can react again (using energy to poke) to form the substrate's Plating. This allows a thinner coating to be made on the substrate than using a secondary source (step E). However, the substrate itself must have sufficient constituents to make a thick coating on the surface of the substrate (step F) is the principle. For example, 'Using tungsten carbide (eg 92%) matrix in cobalt matrix', the energy source will cause tungsten and carbides to dissociate into tungsten and carbon forms, and breaking will become diamond on the substrate. Or DLC coating components (-39-The paper ruler (CNS) A4 size (2iQx297))-(Please read the precautions before filling this page)

8¾ II A ir 五、發明説明( 經濟部中央標準局員工消費合作社印製 39 固有來源)。此外’鈷母體中所分解 作金剛石或DLC鍍層所需之碳的 軸本Ϊίί技術方法優於現有的⑽(及PVD) J程”’,用方法中銘會造成系統中石墨的成長,並因此“ 損害系統’且抑制金剛石鍍層或DI£鏡層的形成。 使用本發明之方法’聰財所形錢任何石墨可有 效且連續地轉換為所製作之金剛石鍍層中的金剛石 。最好 疋,所有可供使用的石墨皆可在此製程中消耗掉。然而, 如果有少量石墨仍然未轉換為金剛石並不會損壞到此製程 在製程步驟G(接在步驟£之後)中,在基質上製作 鍍層時,可將具有不同副元素的不同副來源導入反應系統 中。這會在基質上製作出一多層鍍層。 譬如說,由碳化鎢基質開始,依序將副元素導入反應 系統中,可在其上製作一層碳化鈦鍍層,上面再製作一層 氮化鈦層,更上面再製作一層金剛石層。 由其它的範例’可在氮化三硼(CBN )的薄鍍層上被 覆一層厚的金剛石鍍層。 此製程也可在氮化矽上製作金剛石鍍層。 此製程也可用來製作金剛石與OT的複合結構,反之 亦然,或是製作混合有破化矽或氮化矽的金剛石粒子之複 合結構。 如製程步驟Η中所示,在某些情況下最好避免(或減 低)將合成物質擴散回基質(見步驟Β),在這種情形下 ,此製程可在步驟Α之基質的一種或以上的組成元素移動 、蒸發及反應之後停止&lt;•這是在基質表面上製作極薄的鍍 40 本纸張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 一讀先閱讀背面之注意事項再填寫本頁) 訂 ο!8¾ II A ir 5. Description of the invention (printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 39 Inherent source). In addition, 'the technical method of the carbon required for the diamond or DLC coating decomposed in the cobalt matrix is better than the existing process (and PVD) J process', and the use of this method will cause the growth of graphite in the system and therefore "Damage the system 'and inhibit the formation of diamond coatings or DI mirror layers. Any graphite formed using the method of the present invention can be efficiently and continuously converted into diamond in the diamond coating produced. Best of all, all available graphite can be consumed in this process. However, if a small amount of graphite is still not converted to diamond and will not be damaged to this process. In process step G (following step £), when making a coating on a substrate, different side sources with different side elements can be introduced into the reaction. System. This creates a multilayer coating on the substrate. For example, starting with a tungsten carbide matrix and sequentially introducing the secondary elements into the reaction system, a titanium carbide coating can be made on top of it, a titanium nitride layer on top, and a diamond layer on top. According to another example ', a thin coating of triboron nitride (CBN) can be coated with a thick diamond coating. This process can also produce diamond coatings on silicon nitride. This process can also be used to make a composite structure of diamond and OT, and vice versa, or a composite structure of diamond particles mixed with broken silicon or silicon nitride. As shown in process step Η, in some cases it is best to avoid (or reduce) the diffusion of synthetic material back to the substrate (see step B). In this case, the process can be performed on one or more of the substrates in step A The constituent elements stop after moving, evaporating and reacting. &Lt; • This is a very thin plating on the surface of the substrate. (Please fill in this page again)

五、發明説明() 40V. Description of the invention () 40

經濟部中央標準局員工消費合作社印製 層時很有利的一點。 譬如說,最好可在不影響基質·原來容積(如:維度) 的情況下,在基質表面上(如:銅線)或基質表面下形成 金剛石或DLC的薄鍍層。譬如說,球或滾筒軸承執道或座 圈的選取面或整個面積的材料組成可在不影響原來的容積 的情況下加強。 此製造流程也可由一開始的移動、蒸發及反應(步驟 A)直接進行至將副來源導入反應系統中的步驟(步驟E )。(此“分支路徑”視為一製程步驟’即圖1中的製程 步驟I )» 譬如說,為了在純鈦基質上製作金剛石,必須將作為 副元素的碳導入系統中(在基質中沒有可供使用的碳可作 為组成元素)。基質中鈦的移動、蒸發及反應步驟可與接 下來製作的金剛石或DLC鍍層形成一擴散鍵結。 譬如說,由矽基質開始,藉由副來源將碳導入以製造 材區中碳化矽的矽。接著,可將碳化矽轉換成金剛石。或 者是,譬如說,藉由副來源將氮導入以製造造材區中氮化 矽的矽,以及依序以副來源來提供反應系統中的碳,以形 成造材區上的金剛石或DLC層。 【造材區(圖2A)】 圖2A為根據本發明之方法,根據圖1所述之一個或以 上的製程步驟所處理的典型處理基質200的橫斷面圖。其 中顯示具有頂端表面204的基質202,在基質表面下形成 的副造材區206,在副造材區206下形成的主造材區208 -41 - (請先閲讀背面之注意事項再填寫本頁) δ衣. 訂 11 j 本紙張尺度適用中國國家標窣(CNS ) A4規格(210X297公釐) A H 修成 +月日 ~S8.1ir8 —: 五、發明説明() 41 ,以及在基質表面上所製作的鍛層210。譬如說,可私行 (圖1的)製程步驟A ’ B,D及Έ來獲得處理後的基質 200。如上所述,副造材區206的厚度(d2)通常小於主 造材區的厚度(dl)’且其合成物質的濃度大於主造材區 β造材區的深度(d )總共為dl+d2=d 製作之鍍層的厚 度為“t”。 【多層鍍層(圖2B)】 圖2B為根據本發明之技術方法,根據圖1所述之一個 或以上的製程步驟所處理的典型處理基質220的橫斷面圖 。其中顯示具有頂部表面224的基質222,形成在基質表 面上且厚度為“tl”的第一鍍層226 (為便於說明,此圖 中略去主造材區及副造材區),形成在前述第一鍍層表面且 厚度為“1:2”的第二鍍層228,以及形成在第二鍍層228 頂部表面且厚度為“t3”的第三鍍層230。此一處理基質 220可由執行(圖1中的)製程步驟A,B,D,E及G 來獲得。 根據本發明的特徵,可輕易地製作出如圖2B中的多層 鍍層。譬如說:可由基質组成元素的组成來形成第一鍍層 226,並將第一副元素藉由副來源導入反應系統中;可由 第一鍍層226之組成元素的組成來形成第二鍍廣228 ’並 將第二副元素藉由副來源導入反應系统中;可由第二鍍層 228之紕成元素的組成來形成第三鍍層23〇 ’並將第三副 元素藉由副來源導入反應系统中。根據本應用,可製作出 具有預定材料组成的多層鍍層β -42 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐〉 — (請先閱讀背面之注意事項再填寫本頁j -訂- 經濟部中央標準局員工消費合作社印製 五、發明説明() 42 這可顯示出此反應系統的彈性及可控制性,也就是說 ’所製作之鑛層的性質及组成可輕、易地僅由將一連串不同 的副元素導入反應系統中決定。在以下的討論中可清楚的 看出,本發明技術方法中許多額外的特徵可允許對材料組成 之加強度做高度的可控制性及選擇性,包括鍵層的製作。 【能量來源(圖3)】 圖3描述根據本發明之表面處理系統300的操作圖。 二個分開且不同的雷射312,314以及316各透過各別的 光束傳輸系統(BDS ) 322,324及326照射到基質302的 表面304上。如圖所示,所照射的光束聚集在基質上的選 取地區330,指示出基質表面上可處理的選取區(各小於 整個表面)。為了處理整個基質表面,(a )選取區(33〇) 必須等於或大於基質表面的所有表面區,或是(b )必須 提供能使基質及光束之間的移動足以《掃描”基質整個表 面之選取處理區的機構。在此圖中,基質可以箭頭332所 指之相對於光束的方向移動,以使光束聚集的選取區依箭 頭334所指的相反方向移動至大於一個基質選取地區的表 面區上。精於此技藝者當可瞭解機械臂/自動化/定位機 構可用來使基質及光束間產生此種相對移動,且其掃描路 徑可以任何適當的方法來控制。譬如說,基質3〇2可以一 定位機構來保持’例如:在多軸機械臂的末端作用器(如 :X,y,ζ) ’在此場合,此機構可將基質在χ,y及ζ的任 何方向上移動,這在處理基質的複雜的幾何圖形及多個表 面是很有用的。對於具有相當平坦表面的平面基質而言, -43 - 本紙張尺度適用中國國家標準(CNS )八4規格(210X297公楚;) (&quot;&gt;:讀^面之;1意事項再填^太頁 ---I '^' . 經濟部中央標準局員工消費合作社印製The Central Consumers Bureau of the Ministry of Economic Affairs has a favorable point when it comes to the print floor of consumer cooperatives. For example, it is best to form a thin coating of diamond or DLC on the surface of the substrate (eg, copper wire) or under the surface of the substrate without affecting the original volume (eg, dimensions) of the substrate. For example, the material composition of the selection surface or the entire area of the ball or roller bearing raceway or raceway can be strengthened without affecting the original volume. This manufacturing process can also be performed directly from the initial movement, evaporation, and reaction (step A) to the step of introducing a secondary source into the reaction system (step E). (This "branch path" is regarded as a process step, that is, process step I in Fig. 1) »For example, in order to make diamond on a pure titanium substrate, carbon as a secondary element must be introduced into the system (there is no Available carbon can be used as a constituent element). The steps of titanium movement, evaporation, and reaction in the matrix can form a diffusion bond with the diamond or DLC coatings made next. For example, starting with a silicon matrix, carbon is introduced by a secondary source to produce silicon carbide silicon in the material region. Silicon carbide can then be converted into diamond. Or, for example, nitrogen is introduced by a secondary source to produce silicon nitride silicon in the material region, and carbon in the reaction system is sequentially provided by the secondary source to form a diamond or DLC layer on the material region. . [Materials area (Fig. 2A)] Fig. 2A is a cross-sectional view of a typical processing substrate 200 processed according to one or more of the process steps described in Fig. 1 according to the method of the present invention. It shows a substrate 202 with a top surface 204, a secondary material area 206 formed under the substrate surface, and a primary material area 208 -41 formed under the secondary material area 206-(Please read the precautions on the back before filling in this Page) δ. Order 11 j This paper size is applicable to China National Standard (CNS) A4 (210X297 mm) AH Modified + Month ~ S8.1ir8 —: 5. Description of the invention () 41, and on the surface of the substrate The produced forging layer 210. For example, the process steps A'B, D, and rhenium (of FIG. 1) may be performed in private to obtain the processed substrate 200. As described above, the thickness (d2) of the secondary material area 206 is generally smaller than the thickness (dl) 'of the main material area and the concentration of the synthetic substance is greater than the depth (d) of the β material area of the main material area. d2 = d The thickness of the plated layer is “t”. [Multilayer Plating (FIG. 2B)] FIG. 2B is a cross-sectional view of a typical processing substrate 220 processed according to one or more of the process steps described in FIG. 1 according to the technical method of the present invention. A substrate 222 having a top surface 224 is shown, and a first plating layer 226 is formed on the surface of the substrate and has a thickness of “tl” (for ease of illustration, the main material area and the auxiliary material area are omitted in this figure), and are formed in the aforementioned first A second plating layer 228 with a thickness of "1: 2" on the surface of the plating layer, and a third plating layer 230 having a thickness of "t3" formed on the top surface of the second plating layer 228. Such a processing substrate 220 can be obtained by performing process steps A, B, D, E, and G (in FIG. 1). According to the features of the present invention, a multilayer plating layer as shown in Fig. 2B can be easily produced. For example, the first plating layer 226 can be formed by the composition of the constituent elements of the matrix, and the first secondary element can be introduced into the reaction system through the secondary source; the second plating layer 228 can be formed by the composition of the constituent elements of the first plating layer 226 The second secondary element is introduced into the reaction system through a secondary source; the third plating layer 23 ′ may be formed from the composition of the element formed in the second plating layer 228 and the third secondary element is introduced into the reaction system through a secondary source. According to this application, a multilayer coating with a predetermined material composition can be produced β -42-This paper size is applicable to China National Standard (CNS) A4 specifications (210X297 mm) — (Please read the precautions on the back before filling in this page j- Order-Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the Invention () 42 This shows the flexibility and controllability of this reaction system, which means that 'the nature and composition of the produced mineral layer can be light and easy The ground is determined only by introducing a series of different auxiliary elements into the reaction system. It will be clear from the following discussion that many additional features in the technical method of the present invention allow a high degree of control over the strength of the material composition and Selectivity, including the production of bond layers. [Energy Source (Figure 3)] Figure 3 depicts the operation diagram of the surface treatment system 300 according to the present invention. Two separate and different lasers 312, 314, and 316 each pass through their respective The beam transmission system (BDS) 322, 324, and 326 irradiate the surface 304 of the substrate 302. As shown in the figure, the irradiated beam is concentrated on a selected area 330 on the substrate, indicating the base Selectable areas on the surface (each smaller than the entire surface). In order to treat the entire substrate surface, (a) the selection area (33) must be equal to or larger than all surface areas on the substrate surface, or (b) must provide the substrate And the movement between the beams is enough to "scan" the entire surface of the substrate to select the processing area. In this figure, the substrate can be moved with respect to the direction of the beam indicated by arrow 332, so that the selection area where the beam is focused follows arrow 334 The finger moves in the opposite direction to a surface area larger than a selected area of the substrate. Those skilled in the art will understand that a robotic arm / automation / positioning mechanism can be used to cause this relative movement between the substrate and the beam, and its scanning path can be any Appropriate methods to control. For example, the substrate 302 can be held by a positioning mechanism 'for example: at the end of a multi-axis robotic arm (such as: X, y, ζ)' In this case, this mechanism can Moving in any direction of χ, y, and ζ, which is useful for dealing with the complex geometry of a substrate and multiple surfaces. For planes with fairly flat surfaces In terms of matrix, -43-This paper size is applicable to China National Standard (CNS) 8-4 specifications (210X297); (&quot; &gt;: Read the first one; then fill in the ^ -item --- I ' ^ '. Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs

n-n m^— - I 1 I - I I 1 —I: I A7 B7 43 五、發明説明( --------— (請先聞讀背面之注意事項再填寫本頁) 以簡單的機構如:χ-γ定位台來移動基質是可以接受的。 然而,此種移動在一些需揸制形狀的特定應用上也是必要 的’包括控制光束的焦點及角度。精於此技藝者當可瞭解 光束的此種掃描本身可在電腦控制(以適當的檢流器或類 似器具)下完成,並可依任何照所定的路徑,在任何時候 盤據在基質表面區的任何部分,且能量強度以及焦點的選 擇也可控制。在某些應用中最好能有可掃描光束以及多軸 式基質定位機構的裝置,以達成理想的結果。使用機械臂 式機構來移動基質的優點是同一的機械臂可用來檢取(取 回)要作表面處理的基質以及在表面處理後將基質放置( 俾遞)。精於此技藝者當可瞭解基質的此種移動可在電腦 控制下完成,並可使光束依照任何理想的路徑,在任何 候盤據在基質表面區的任何部分。 雷射能量來源312 ,3:U及316可藉由適合的已知光 學元件,在光束路徑上以電腦數值控制方式來達成聚焦, 擴散’聚集,發散,輸送等功能。此種光學元件一般是以 光束傳送系統(BDS ) 322 ,324 ,326來表示。 基質表面處理所用的三個雷射中的每一個都會促成整 個反應。一般來說: 經濟部中央標準局員工消費合作社印製 •巧中的第-個312 (祕1}是时蒸發組成元 素(以造成氣相),並破壞蒸發之組成元素的化學鍵。第 -個雷射最好為在192,248或3〇8nm下操作的激態原子 雷射。此種雷射對蒸發任何組成元素均很有用。在大部分 的情形下,激態原子雷射在蒸發組成元素以及在基質表面 -44 -nn m ^ —-I 1 I-II 1 —I: I A7 B7 43 V. Description of the invention (--------— (Please read the notes on the back before filling this page) With a simple mechanism Such as: χ-γ positioning table to move the substrate is acceptable. However, this kind of movement is also necessary for some specific applications that need to shape the shape 'including controlling the focus and angle of the beam. Those skilled in this art will understand This scanning of the beam itself can be done under computer control (with an appropriate galvanometer or similar device), and can follow any given path, at any time, on any part of the surface area of the substrate, and the energy intensity and The choice of focus can also be controlled. In some applications it is best to have a device that can scan the beam and a multi-axis substrate positioning mechanism to achieve the desired result. The advantage of using a robotic arm mechanism to move the substrate is the same robotic arm It can be used to retrieve (retrieve) the substrate to be surface treated and to place (transmit) the substrate after the surface treatment. Those skilled in the art can understand that such movement of the substrate can be done under computer control and can make Beam Follow any ideal path, according to any part of the surface area of any substrate. Laser energy sources 312, 3: U and 316 can be controlled by computer numerical control on the beam path by suitable known optical elements. Achieving the functions of focusing, diffusion, focusing, divergence, transportation, etc. Such optical elements are generally represented by a beam delivery system (BDS) 322, 324, 326. Each of the three lasers used in the surface treatment of the substrate will contribute to the entire Response. Generally speaking: The first -312 (secret 1) printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs is the time to evaporate the constituent elements (to create a gas phase) and destroy the chemical bonds of the evaporated constituent elements. -A laser is preferably an excited atomic laser operating at 192, 248, or 308 nm. This type of laser is useful for evaporating any constituent element. In most cases, an excited atomic laser is Evaporation of constituent elements and on the surface of the substrate -44-

年月曰 五、發明説明() 44 上起動初始氣體反應(PGR )中扮演了主導的角色。在某 些情形中,激態原子雷射的角色可*由另一個雷射(如314 來輔助。 •三個雷射中的第二個314 (雷射2)主要是用來驅 動擴散功能(如:步驟B ),以及平衡熱氣體反應與氣相反 應的化學量。此一雷射最好為Nd:YAG雷射’而且通常是作 作為激態原子雷射之主導角色的支持角色在某種情況下 ,Nd:YAG雷射也可辅助蒸發組成元素,特別是在明亮(反 射)材料的情況時;此外,在某此情況下Nd:YAG雷射也可 扮演了主導的角色,而由激態原子雷射來辅助(即,對某 些基質及鍍層材料而言,激態原子與Nd:YAG雷射的角色可 互換)。一般來說,使用激態原子與Nd:YAG雷射來起動组 成物質的蒸發以平衡反應時,在兩個雷射之間的交互作用 會使此反應技術方法失去平衡〃在任何情況中使用兩個雷 射來辅助反應是較有利的&quot;譬如說,若要形成一金剛石薄 膜,則激態原子的較大電力與脈衝性能通常負貴起動此氣 相反應,且由Nd:YAG雷射來辅助。 經濟部中央標隼局員工消費合作社印製 •三個雷射中的第三個316 (雷射3),最好是C0 雷射,是用來平衡發生在基質表面上的熱、物理、氣體及 化學反應。C0雷射的基本角色是提供熱平衡,並避免在 反應氣體中產生熱的梯度。C0雷射也可提供氣體反應中 的最小溫度平衡,並影響反應溫度。①雷射也可提供發 生在基質表面之反應以及發生在基質表面上之氣體反應兩 者之間的協同作用。在某種情況下(即使用某些基質材料 -45 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐〉 經濟部中央標準局員工消費合作社印製 A7 _____ B7_ 五、發明説明(45 ) 時),(:02雷射也可用來起動反應(即接管此功能中激態 原子雷射的角色)。 雖然圖3所示的雷射分別由不同的角度將光束照射至 基質的選取區33〇 (聚焦點在33〇 ),但在本發明中,光 束可同袖地照射在反應區域上。一般而言,由於三個雷射 間的協同作用,他們應該都可照射至基質上的相同點上( 330 ) 〇 【副來源(圖4)】 圖4描述一特別通於導入一種或以上之副元素的表面 處理系統4〇〇 。在此圖中,三個雷射(如:圖3中的雷射 312 ,314 ,316 )合併成一個組件410 ,其光束透過一 光束傳送系統(BDS ) 412來傳送。這些光束照射在基質 4〇2 (相對於3〇2 )之表面4〇4 (相對於304 )的選取地 區43〇 (相對於33〇 )上,且光束與基質402之間的相對 移動是以箭號432與434 (相對於332與334 &gt;來表示0 在圖4的表面處理系統400中,至少提供了一個副來源( 副來源1 ) 42〇 。可以有許多個(“ N ”)副來源,如副 來源(副來源N ) 422所示。一個或以上之副來源將其一 種或以上之副元素導入反應系統中(基質的組成元素是視 為反應的主要來源),而副元素可為氣體,蒸氣,粉末或 其它合適的形態,以放大直接在基質表面之反應區域内發 生的反應。副元素可由一噴嘴提供,以將副元素流照射在 反應區上,以使副元素促進由雷射光束所驅動的反應。副 元素最好照射在基質上和雷射光束所照射的相同地區(43〇) —4 6 一 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) e)年袈— (請先鬩讀背面之注意事項再填寫本頁) -、1Τ 經濟部中央標準局員工消費合作杜印製 A7 __B7 五、發明説明(46 ) ' _~- ’但也可將副來源照在基質上另一個選取區,或是僅僅以 副元素來“淹沒”基質(即基質的整個表面)。藉由 元素導入反應中,可在基質表面上製作一鍍層)m 1之製法流程中的步驟E。 可藉任何許多已知的裝置,例如··噴鍍、散播、沈積 、溶触、或其匕已知裝置,以及以任何合適的形態.,例如 •液體、氣體、固體、電漿、粉末等,來將副元素導入反 應系統中。 譬如說,氣態副元素可使用增壓嘴嘴(嗜射管)來導 入反應系統中,此喷嘴是設計用來傳送包圍在另一種氣體 (如:惰性氣體)氣氛中的氣態副元素,它可藉由位於噴 嘴(噴射管)中之氣體的螺旋控制旋渦來聚集並負貴副元 素的傳送。以此方式,則副元素可置於和入射能量光束相 同之基質選取區。根據本發明的特徵,氣態副元素(ss) 及包圍(隔絕 &gt; 氣體(SG)皆可作為反應作用中的副元素 。到元素也可選來作為當製成中不需副元素時(例如:上 述製法流程的步驟C , F及Η )的“隔絕物”(隔絕環境, 不必使用真空),其中此副元素(及包圍氣體)可為乾淨 氣體或惰性氣體。隔絕功能不一定要有,依其處理而定。 【喷嘴設計(圖5,5Α及5Β)】 圖5描述適合將氣態副元素(由副來源)導入反應系 統之喷嘴5〇〇的實施例。在此實施例中,噴嘴5〇〇適合用 來注入三種不同的氣體:氣態副元素(ss),隔絕氣體( SG)以及“緩衝,,氣體(BG) 〇 -4 7 _ 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁) --^-------------------訂------ 經濟部中央標準局員工消費合作社印策 A7 B7 五、發明説明(47) 噴嘴500為環狀,具有環狀體508及中央軸向通道506 。使用時,喷嘴5〇〇是放在處理中之基質的表面上。如圖 所示,三個雷射光束El,E2及E3可透過噴嘴的中央通道照 射在基質上。 在此噴嘴的實施例500中,將隔絕氣體(SG,如氪) 透過噴嘴的較低(靠近基質表面)入口 530導入,經由環 狀流道532在噴嘴體中循環,並經由出 口 534排出至嗜嘴 的中央通道(内徑孔)。將副來源(SS,如二氧化碳)透 過噴嘴的中間入口 52Q導入,經由環狀流道522在噴嘴體 中循環,並經由出口埠524排出至噴嘴的中央通道。由於 到元素是噴射至隔絕氣體之上方,因此副元素將被置於與 雷射能量(El,E2,E3 )反應,並為此隔絕氣體包圍(圍 繞)之狀態。缓衝氣髏(BG),類似於增感作用劑,可連 同副來源一起導入。必要的話,選用此緩衝氣體來協助將 能量由雷射光束轉移至副來源,並作為毁壞副來源之前的 緩衝器。如圖所示,將缓衝氣體透過噴嘴的上方入口 510 導入,經由環狀流道512在噴嘴體中循環,並經由出口 514 排出至噴嘴的中央通道。由於缓衝氣體是由噴嘴中噴射至 副來源之上方,因此此氣體將吸收雷射能量(E1,E2,E3 ) 以轉移成副來源氣體。噴嘴5〇0是放置在基質上方距離為 “ h ”處,以使得氣體反應有足夠的時間(如:傳遞速率 乘上時間)在噴嘴及基質之間完成。 圖5A及5B描述可將副來源(SS)氣體及隔絕氣體(SG&gt; 傳送至處理系統之噴嘴55〇的另一個較佳(如:在碳化鎢 -48 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 訂 A7 B7 五 、發明説明(48 ) 基質上製作一金剛石鍍層)實施例,大致上類似於圖5中 的實施例5〇〇 ,其中噴嘴為環狀且有一中央通道可供雷射 光束(如圖SB中的以單箭號“光束,,表示)經由這些氣體 照射在欲處理之基質表面上。在此實施例中,嘴嘴55〇是 由兩個扁平的環狀噴嘴體552及554以“夹心,,方式累疊 而建造的,其中552置放在ΜΑ之上。上方噴嘴體552有 一入口 561可接收副來源(ss&gt;氣體,一環狀流道562可 使副來源氣體在上方噴嘴體中均句地(以動態流體方式) 循環’以及許多大约位於喷嘴體之内孔徑(ID)處的 出口 564 。如圖SA所示,出口是以相對於喷嘴體轴線之切 線方向’使棑出之副來源氣體呈旋渦狀流動(如圖5A中的 順時針方向}。如圖SB所示副來源氣體最好由喷嘴552 平面(共面)排出。這可允許副來源氣體儘量靠近入射之 雷射光束能量(BEAMS },以使副來源氣體的反應可立即 發生。由上述的討論可明顯地看出,噴嘴55〇距基質表面 上方有一段相當的距離(如圖7中的“h ”),以供副來 源反應之後的搜辱之用。如圖SB所示隔絕氣體(犯)透 過下方噴嘴體554的入口 58〇導入,流經流道582在下方噴 嘴體554中循環,並經由許多出口別4排出至喷嘴體的通道 。位在兩個噴嘴體554及之間的通道為同心狀,且最 好為相同大小。如圖SB所示,隔絕氣體之出口 584的方向 朝下’朝向欲處理之基質。出口 584也可以相對於噴嘴體 轴線之切線方向,使排出之副來源氣體呈旋渦狀流動(如 圖5A中的順時針方向)。這會產生隔絕氣體的“迴旋旋渦, 一 4 9 一 本紙張尺度適用中國國家標)八4祕(2ΐ〇χ297公羡) (請先閱讀背面之注意事項再填寫本頁) ------------ot-----—IT---- 經濟部中央標準局員工消費合作社印製 經濟部中央標準局員工消費合作社印製 ---- . SB. 11 8 . ir 五、發明説明() 49 (如590線所示),而將副來源包圍並使之朝基質移動β 為了簡化喷嘴體552及554的操作,流道562及582是以 將凹槽延伸至各別喷嘴體之較低表面的方式來形成的。下 方嗔嘴,554的頂端表面與上方喷嘴體552的凹槽(流道 562 )密合’且具有中央通遒的環狀平面592與下方喷嘴 體554的凹槽(流道582 )密合。 【前處理(圖6Α,6Β)】 一般來說’事先製備欲施鍛層之表面對基質較有利。 可去除出現在表面上的研磨痕跡及污染物。磨光及化學# 刻是執行前處理的習知方法。一般來說,基質的化學蝕刻 必須處理一些危險的化學製品,並會產生有毒廢物,因而 導致基質鍍覆系統的複雜度的增加。此外,每一種基質组 成都需要各別的化學製品以執行此種蝕刻β根據本發明, 可使用已就位之用來製作鍍層的相同雷射來作為製備不同 型態之供製作鍍層的基質之用。 根據本發明之特徵,表面處理系统(如:3〇〇 )不只 可在基質表面上執行表面處理,也可用來執行前處理。一 般來說’相對於氣體而言,這只是控制雷射之製程參數的 問題。 圖6Α及6Β描述如何來進行關聯於本發明的表面處理 製程之基質的前處理。此前處理流程可在圖1所述之表面 處理製程之前或同時執行。 根據本發明,本發明的前處理技術方法可作為接下來 對於基質表面所作之鍍層製程(包括CVD法)的“先驅”。 -50 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) (請先閱讀背面之注意事項再填寫本頁) V mu fm n^— IT--! ---------------- 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明说明(5l 一般來說,如圖sA所示,碳化鎢基質6〇2上含有被鈷 632包圍及覆蓋的碳化鎢顆粒63〇。如上所述,鈷的存在 會對基質上金剛石鍍廣的形成造成困擾。尤其是當姑位在 基質表面上時更是麻煩。根據本發明之特徵,在此種基質 上可能會導致表面化學性質的改變。譬如說,碳化鎢基質 的化學性質可能改變成具有穩定之氮^鈷。 根據本發明之特徵,使用雷射(如激態原子雷射)來 對基質作前處理,以熔削基質表面上的鈷(以及某些碳 化鑛)’藉以使碳化鴣顆粒634顯現出來,接著再執行下 面所述的其它冶金功能。此外,鈷也可經由反應來獲得穩 定的氮化鈷。可熔削鈷,並使某些[與⑶反應以形成穩定 的氮化碳或氮化鈷。也可在事前處理過程中,導入氮以形 成氪化鈷,改變基質的表面化學性質,形成穩定之氮化鈷 或氪化碳來協助結晶方向,並獲得超過〗_〇_〇的平面金刚 石。現有技巧中,通常是先產生CBN以製備基質表面,接 著再產生1-0-0 (100 )的平面金剛石。 圖6B表不業經前處理的碳化鎢基質(6〇2),圖中也顯 示此前處理過程將會使凝化鎢顆粒的尖峰弄成所要的圓度。 藉此方法(即藉將欲實施表面處理/鍍覆的基質施以前處 理)會產生種種優點。即可自表面上減除鈷至最少或予以 完全消除,可自表面上去除磨痕及不純物,及可控制及改 質曝露之碳化鎢的結構。一般而言,在實施表面處理(例 如鍍覆)過程之前,施行這種前處理過程,則在其後的表 面處理過程可藉分給要接受處理的基質的表面以已知(如 —51 — 本紙張尺度適用中國國家標準(CNS ) A4规格(210X297公釐) ^------IT (請先聞讀背面之注意事項再填寫本頁) 經濟部中央樣準局員工消費合作社印装 if λ 棘: 五、發明説明(ς1 ) 3丄 不變的,可重覆的)特性而更可容易控制。如圖6B所示, 一皮下層區延伸至深度d'已清除掉始。通常,這是上面所 述造材區的前驅體。圖11A及圖11B也是圖示前處理過程, 將於下文敘述。另外的製程參數的詳細情形將於下文所舉 實施例詳述。 除了使碳化鎢顆粒曝露及弄圓之外,本發明的前處理 過程尚能達成在基質的表面内部的冶金學上變化。譬如( 再就録燒結碳化嫣而論)具有1.0.0(100)結晶取向的金剛 石可形成,此金剛石將做為後續的在基質表面上形成金剛 石(或DLC)鍍層的過程用高度理想的晶核成形基台。再次 說明,這是與所採用鏡覆基質的方法無關,但對CVD法及 其類似方法非常有用。然而,使用本發明的鍍層形成過程 很顯然地將會造成協同效果及指數結果,因為同一個雷射 設備使用在前處理(準備,特性化)及處理(製成鍍層在)基 質上。此外,(再次,就鈷燒結碳化鎢基質而言)本發明前 處理過程對形成碳+氪化物+氯化鈷的複合物或前述之在 碳化鎢尖峰間的谷部排列取向非常有利,而這將非常適合 後續的鍍覆作業(或同時形成鍍層)。 [表面處理及前處理系統(圖7 )】 上文已對整個製法流程(圖1),三個雷射的使用(圖 3 ),副來源的導入(圖4,5,5A,5B)及前處理(圖6A、 6B)加以詳細說明0 圖7則描述一完整的表面處理系統700 ,使用配合圖 3所示三雷射過程,包括關於圖4所述及的導入一種或以 -52 - 本紙朵尺度適用中國國家標準(CNS ) A4规格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁)Year, month, and fifth, Invention Description () 44 played a leading role in starting the initial gas reaction (PGR). In some cases, the role of an excimer laser can be assisted by another laser (such as 314. • The second 314 (laser 2) of the three lasers is mainly used to drive the diffusion function ( Such as: Step B), and balance the stoichiometry of the hot gas reaction and the gas phase reaction. This laser is best Nd: YAG laser 'and usually plays a supporting role as the leading role of the excimer atomic laser. In this case, Nd: YAG laser can also assist in the evaporation of constituent elements, especially in the case of bright (reflective) materials; in addition, in some cases Nd: YAG laser can also play a leading role, and by Excited atom lasers are used to assist (ie, for some substrates and coating materials, the roles of exciter atoms and Nd: YAG lasers are interchangeable). Generally speaking, exciter atoms and Nd: YAG lasers are used When the evaporation of the constituent materials is initiated to balance the reaction, the interaction between the two lasers will make this reaction technique out of balance. It is advantageous to use two lasers to assist the reaction in any case &quot; for example, To form a diamond film, exciton atoms Larger power and pulse performance are usually more expensive to start this gas phase reaction, and is assisted by Nd: YAG laser. Printed by the Consumer Cooperatives of the Central Bureau of Standards, Ministry of Economic Affairs • The third of the three 316 (laser) 3), preferably C0 laser, is used to balance the thermal, physical, gas and chemical reactions occurring on the surface of the substrate. The basic role of C0 laser is to provide thermal equilibrium and avoid thermal gradients in the reaction gas. C0 laser can also provide the minimum temperature balance in the gas reaction and affect the reaction temperature. ① Laser can also provide a synergy between the reaction that occurs on the substrate surface and the gas reaction that occurs on the substrate surface. In this case (ie using certain matrix materials-45-This paper size is applicable to Chinese National Standard (CNS) A4 specifications (210X 297 mm)> Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 ___ B7_ V. Description of the invention (45 )), (: 02 laser can also be used to start the reaction (that is, take over the role of the excitatory atomic laser in this function). Although the laser shown in Figure 3 irradiates the beam from different angles to The quality selection area is 33 ° (focus point is 33 °), but in the present invention, the light beam can be irradiated onto the reaction area with the same sleeve. Generally, due to the synergy between the three lasers, they should all be irradiated To the same point on the substrate (330). [Sub source (Figure 4)] Figure 4 depicts a surface treatment system 400 that is particularly well-suited for introducing one or more secondary elements. In this figure, three lasers (Eg, the lasers 312, 314, and 316 in Fig. 3) are combined into a component 410, and the light beam is transmitted through a beam delivery system (BDS) 412. These light beams are irradiated on the substrate 402 (relative to 302) The surface 404 (relative to 304) is on the selected area 43 ° (relative to 33 °), and the relative movement between the beam and the substrate 402 is represented by arrows 432 and 434 (relative to 332 and 334). 0 In the surface treatment system 400 of FIG. 4, at least one secondary source (secondary source 1) 42 is provided. There can be many ("N") secondary sources, as shown by the secondary source (secondary source N) 422. One or more secondary sources introduce one or more of its secondary elements into the reaction system (the constituent elements of the matrix are regarded as the main source of the reaction), and the secondary elements can be gas, vapor, powder or other suitable forms to enlarge Reactions that occur directly in the reaction zone on the substrate surface. The secondary element may be provided by a nozzle to irradiate the secondary element stream onto the reaction zone so that the secondary element promotes the reaction driven by the laser beam. It is best to irradiate the secondary elements on the substrate and the same area as the laser beam (43〇) — 4 6 A paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) e) year 袈 — (please first (Please read the notes on the reverse side and fill out this page)--1T consumer printing cooperation with the Central Standards Bureau of the Ministry of Economic Affairs, printed A7 __B7 V. Description of the invention (46) '_ ~-' But you can also take the secondary source on the substrate A selection, or "submerged" the matrix (ie, the entire surface of the matrix) with only secondary elements. In the element introduction reaction, a plating layer can be formed on the surface of the substrate) Step E in the manufacturing method flow. It can be borrowed from any of many known devices, such as spraying, spreading, depositing, dissolving, or known devices, and in any suitable form, such as liquid, gas, solid, plasma, powder, etc. To introduce side elements into the reaction system. For example, a gaseous secondary element can be introduced into the reaction system using a pressurized nozzle (ejector). This nozzle is designed to convey a gaseous secondary element surrounded by another gas (such as an inert gas). The spiral control vortex of the gas in the nozzle (jet tube) gathers and negatively transports the noble elements. In this way, the secondary element can be placed in the same matrix selection area as the incident energy beam. According to the features of the present invention, both the gaseous secondary element (ss) and the surrounding (isolation &gt; gas (SG) can be used as a secondary element in the reaction. To element can also be selected when no secondary element is required in the production (for example : The "isolation" (isolation of the environment, no need to use a vacuum) in steps C, F and Η) of the above manufacturing process, where the secondary element (and surrounding gas) can be a clean gas or an inert gas. The isolation function does not necessarily have to be, [Nozzle Design (Figures 5, 5A and 5B)] Figure 5 depicts an example of a nozzle 500 suitable for introducing gaseous secondary elements (from a secondary source) into the reaction system. In this embodiment, the nozzle 500 is suitable for injecting three different gases: gaseous secondary element (ss), barrier gas (SG) and "buffer, gas (BG). 〇-4 7 _ This paper size applies to China National Standard (CNS) A4 specifications (210X297mm) (Please read the notes on the back before filling this page)-^ ------------------- Order ------ Central of the Ministry of Economic Affairs Imprint A7 B7, Consumer Cooperatives of Standards Bureau V. Description of Invention (47) Nozzle 500 is ring-shaped, with Ring body 508 and central axial channel 506. In use, the nozzle 500 is placed on the surface of the substrate being processed. As shown in the figure, three laser beams El, E2 and E3 can pass through the central channel of the nozzle. The substrate is irradiated. In the embodiment 500 of this nozzle, a barrier gas (SG, such as krypton) is introduced through the lower (close to the substrate surface) inlet 530 of the nozzle, and circulates in the nozzle body through the annular flow channel 532, and It is discharged to the central channel (inner diameter hole) of the mouthpiece through the outlet 534. The secondary source (SS, such as carbon dioxide) is introduced through the middle inlet 52Q of the nozzle, circulates in the nozzle body through the annular flow channel 522, and through the outlet port 524 Discharge to the central channel of the nozzle. Since the element is sprayed above the barrier gas, the secondary elements will be placed in a state that reacts with the laser energy (El, E2, E3), and for this reason the barrier gas is surrounded (surrounded). Buffered Gas Crossbone (BG), similar to a sensitizer, can be introduced together with the secondary source. If necessary, this buffer gas is selected to assist the transfer of energy from the laser beam to the secondary source and serve as the secondary source of destruction The previous buffer. As shown in the figure, the buffer gas is introduced through the upper inlet 510 of the nozzle, circulates in the nozzle body through the annular flow channel 512, and is discharged to the central channel of the nozzle through the outlet 514. Since the buffer gas is It is sprayed from the nozzle above the secondary source, so this gas will absorb the laser energy (E1, E2, E3) to transfer into the secondary source gas. The nozzle 500 is placed at a distance "h" above the substrate so that The gas reaction has sufficient time (eg, transfer rate multiplied by time) to complete between the nozzle and the substrate. Figures 5A and 5B depict the nozzle 55 that can transfer the secondary source (SS) gas and the barrier gas (SG &gt;) to the processing system. (Such as: in tungsten carbide-48-this paper size applies Chinese National Standard (CNS) A4 size (210 X 297 mm) (Please read the precautions on the back before filling out this page)) Order A7 B7 5 2. Description of the invention (48) The embodiment of making a diamond coating on a substrate is substantially similar to the embodiment 500 in FIG. 5, in which the nozzle is ring-shaped and has a central channel for a laser beam (as shown in FIG. SB). It is indicated by a single arrow "beam," via these gases on the surface of the substrate to be treated. In this embodiment, the nozzle mouth 55 is constructed by two flat ring-shaped nozzle bodies 552 and 554 stacked in a "sandwich" manner, in which 552 is placed above the MA. The upper nozzle body 552 has an inlet 561 can receive the secondary source (ss &gt; gas, an annular flow channel 562 can circulate the secondary source gas evenly (in a dynamic fluid manner) in the upper nozzle body, and many are located approximately at the inner aperture (ID) of the nozzle body The outlet 564. As shown in Figure SA, the outlet is in a tangential direction with respect to the axis of the nozzle body, so that the blasted secondary source gas flows in a vortex shape (as shown in clockwise direction in Figure 5A). As shown in Figure SB The secondary source gas is preferably discharged from the plane (coplanar) of the nozzle 552. This allows the secondary source gas to be as close as possible to the incident laser beam energy (BEAMS), so that the reaction of the secondary source gas can occur immediately. It is obvious from the above discussion It can be seen that the nozzle 55 is a considerable distance above the surface of the substrate (such as "h" in Fig. 7) for the purpose of searching for humiliation after the reaction of the secondary source. Under the nozzle body 554 The port 58 is introduced, flows through the flow channel 582 and circulates in the lower nozzle body 554, and is discharged to the channel of the nozzle body through many outlets 4. The channels located between the two nozzle bodies 554 and between them are concentric, and it is best It is the same size. As shown in Figure SB, the direction of the outlet 584 of the isolation gas is directed downward toward the substrate to be treated. The outlet 584 can also make the discharged secondary source gas flow in a vortex relative to the tangential direction of the nozzle body axis. (As shown in clockwise direction in Figure 5A). This will produce a "swirling vortex to isolate the gas, a 4 9 1 paper size applicable to the Chinese national standard) 8 secret (2ΐ〇χ297 public envy) (Please read the precautions on the back first (Fill in this page again) ------------ ot ------- IT ---- Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs-Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs- ---. SB. 11 8. Ir V. Description of the invention () 49 (shown as line 590), and surround the secondary source and move it towards the substrate β In order to simplify the operation of the nozzle bodies 552 and 554, the flow channel 562 And 582 are shaped by extending the grooves to the lower surface of the respective nozzle body The lower surface of the mouthpiece 554 is in close contact with the groove (flow channel 562) of the upper nozzle body 552 and the annular plane 592 with a central opening is in close contact with the groove (flow channel 582) of the lower nozzle body 554. [Pretreatment (Figure 6A, 6B)] Generally, it is better for the substrate to prepare the surface to be forged in advance. It can remove the grinding marks and contaminants that appear on the surface. 磨光 和 化学 # Engraving is performed before Conventional methods of processing. Generally, chemical etching of substrates must deal with some dangerous chemicals and generate toxic waste, which leads to increased complexity of the substrate plating system. In addition, each substrate composition requires a separate chemical to perform such an etching. According to the present invention, the same laser that is already in place for the coating can be used as a substrate for preparing different types of substrates for the coating. use. According to a feature of the present invention, a surface treatment system (such as 300) can be used not only to perform surface treatment on a substrate surface, but also to perform pretreatment. Generally speaking, relative to gas, this is only a matter of controlling the process parameters of laser. 6A and 6B illustrate how to perform a pretreatment of a substrate in connection with the surface treatment process of the present invention. The previous processing flow may be performed before or simultaneously with the surface processing process described in FIG. 1. According to the present invention, the pretreatment method of the present invention can be used as a "pioneer" for the subsequent plating process (including CVD method) on the substrate surface. -50-This paper size is applicable to Chinese National Standard (CNS) A4 (210X 297mm) (Please read the precautions on the back before filling this page) V mu fm n ^ — IT--! ------ ---------- Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (5l Generally speaking, as shown in Figure sA, the tungsten carbide matrix 602 is surrounded by cobalt 632 And covered tungsten carbide particles 63. As mentioned above, the presence of cobalt can cause troubles to the formation of diamond plating on the substrate. This is especially troublesome when it lies on the surface of the substrate. According to the features of the present invention, here This kind of substrate may cause changes in the surface chemical properties. For example, the chemical properties of the tungsten carbide substrate may be changed to have stable nitrogen ^ cobalt. According to the features of the present invention, a laser (such as an excited atomic laser) is used to The substrate is pre-treated to melt the cobalt (and some carbonized ore) on the surface of the substrate ', so that the hafnium carbide particles 634 become visible, and then perform other metallurgical functions described below. In addition, cobalt can also be obtained by reaction. Stable Cobalt Nitride. Meltable Cobalt And make some [react with ⑶ to form stable carbon nitride or cobalt nitride. It can also introduce nitrogen to form cobalt tritide during pre-treatment, change the surface chemical properties of the substrate, and form stable cobalt nitride or Tritium carbon is used to assist the crystallization direction and obtain planar diamonds exceeding 〖_〇_〇. In the existing techniques, CBN is usually produced first to prepare the surface of the substrate, and then 1-0-0 (100) planar diamonds are produced. 6B represents the pre-treated tungsten carbide matrix (602). The figure also shows that the previous treatment process will make the peaks of the condensed tungsten particles into the desired roundness. This method (that is, the surface treatment to be performed / Coated substrate before treatment) will produce a variety of advantages. It can remove cobalt from the surface to a minimum or completely eliminate it, can remove wear marks and impurities from the surface, and can control and modify the exposed tungsten carbide. Structure. In general, before performing a surface treatment (such as plating), this pre-treatment process is performed, and the subsequent surface treatment process can be loaned to the surface of the substrate to be treated (such as- 51 — This paper size applies to China National Standard (CNS) A4 (210X297 mm) ^ ------ IT (Please read the precautions on the back before filling out this page) Printed by the Employees' Cooperatives of the Central Sample Bureau of the Ministry of Economic Affairs Install if λ spine: 5. Description of the invention (ς1) 3 丄 constant, repeatable characteristics and more easily controllable. As shown in Figure 6B, a subcutaneous layer extends to the depth d 'has been removed. Usually, this is the precursor of the material area described above. Figures 11A and 11B are also illustrations of the pretreatment process, which will be described below. The details of the other process parameters will be described in detail in the examples below. In addition to the exposure and rounding of tungsten carbide particles, the pretreatment process of the present invention can still achieve metallurgical changes inside the surface of the substrate. For example (recalling sintered carbide), diamonds with a crystal orientation of 1.0.0 (100) can be formed. This diamond will be used as a highly ideal crystal for the subsequent process of forming a diamond (or DLC) coating on the surface of the substrate. Nuclear forming abutment. Again, this is independent of the method used for mirror-coated substrates, but it is very useful for CVD and similar methods. However, the use of the coating formation process of the present invention will obviously result in synergistic effects and exponential results, because the same laser equipment is used for the pretreatment (preparation, characterization) and treatment (making the coating on) the substrate. In addition, (again, in the case of cobalt sintered tungsten carbide matrix), the pretreatment process of the present invention is very advantageous for forming a carbon + halide + cobalt chloride complex or the aforementioned valley alignment orientation between tungsten carbide peaks, and this Will be very suitable for subsequent plating operations (or at the same time forming a coating). [Surface treatment and pre-treatment system (Figure 7)] The above has been the entire manufacturing process (Figure 1), the use of three lasers (Figure 3), the introduction of secondary sources (Figure 4, 5, 5A, 5B) and Pre-processing (Figures 6A, 6B) is explained in detail. Figure 7 describes a complete surface processing system 700, which is used in conjunction with the three laser processes shown in Figure 3, including the introduction of one or -52-as described in Figure 4. The size of this paper is applicable to China National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling this page)

Is. 訂 經濟部中央標準局員工消費合作社印製 A7 _____B7_ 五、發明説明(52 ) 上的副來源,並配合如圖5A&amp;5B所說明的較隹喷嘴設計, 而適於實施圖1所示意的整個過程步驟,及適於實施關於 圖6A及6B所討論的前處理。 此表面處理系統700包括三個雷射:紫外線激態原予 雷射(雷射1)712,紅外線_:?&amp;0雷射(雷射2)714及紅外線 C02雷射(雷射3)716。每一雷射發射一光束,射經噴嘴722 的開口直向基質702的表面。噴嘴722具有最好垂直(90。 角)於基質7〇2表面的轴心線72 3。激態原子雷射712以第一 角度“ θ 1 ”射向基質表面,Nd : YAG雷射714以第二角度 “ Θ 2”射向基質表面,而C〇2雷射716則以第三角度“ Θ 3” 射向基質表面。在本發明的一舉例式實施例中,第一角度 β 1 = 0° (與噴嘴的抽心線平行),第二角度Θ 2=30。而第 三角度θ;Β = + 3〇。。惟三道雷射光束可透過喷嘴的開口而 彼此呈同軸或平行地(即θΐ,θ2,θ3=〇。)射出者仍涵 蓋於本發明的範圍内。噴嘴&quot;722設置在基質702表面上方相 隔“ h”距離處。 氣體狀副來源(SS)72〇(譬如含碳氣體,如二氧化碳氣 )經由喷嘴722供給,而屏蔽(隔絕)氣體(SG)724(不反應或 惰性氣體,如氮氣、氦氣、氬氣等等)也經由噴嘴提供。 通常,此三道雷射光束經由噴嘴射出聚焦在基質7〇2的選 取區上,一如參照圖3於上文所述的方式。然而,將此三 道雷射光的大小調為每一道光束能完全涵蓋基質的整個表 面(所選取的區域包含基質的全表面)仍在本發明的範圍内 。在此實施例中,基質為一矩形基質具有“ χ,,及“ γ,, 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁) -} J ^^^1 ml ^^^1 ι^ϋ n^i- mu 1 ^ m· m^l ^-r-ejnn 11 _ . ^^1 n^n A7 B7 五、發明説明(53 ) 尺寸大小,且在進行表面處理時,被沿Y轴移動。 使用時,接通氣體(720,724)就在基質702表面正上 方位於噴嘴下面(依觀察)即形成電漿(在此圖中並未顯示, 請參間圖8)。一如前述,副來源即在電漿中沿著汽化的 組成元素轉換而在基質表面上形成一鍍層。 通常,激態原子雷射712的角色是完成表面熔除、破 壞副來源(SS )及啟發鍵結合成及成長(造成)一鍍層在基質 表面上;又Nd : YAG雷射714協助激態原子雷射712破壞副 來源氣體及扮演擴散的卓越角色;而C〇2雷射716則幫助維 持電漿中及基質上兩者的反應上熱平衡。記住這一點,雖 然所有三道雷射光束最好穿透喷嘴,然而,將發自C02雷 射716的光束不經由噴嘴的開孔直接射入電漿中也涵蓋在 本發明的範圍内。 [基質支座及平展電漿(圖8 )】 圖8表示被處理基質802的支承裝置及在表面處理過 程中產生的電漿的較佳形態。 經濟部中央標準局J工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 本發明一個顯著的優點為能夠形成非常接近接受處理 基質的表面的平展電漿,此外,這種平展電漿能將基質的 角隅四周包圍,而且有利於在圓型工具如鑽刀上造成鍍層 。通常電漿“傳遞”副元素給基質表面,並確保能局部大 量加熱基質。 在本實施例中,基質802置於一具有似钮釦的突起808 自頂面(依觀察)向上延伸之支座804上面。突起808最好較 所支持的基質的面積小,而基質則呈同心地栽置在突起的 -54 — 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) A7 B7 五、發明説明(54 ) 頂面上。一穿通支座804的真空通道810適於“吸持”(保 持)基質在支座上定位,且非常適合在生產環境中實施自 動處理基質的作業。 圖8中所示的電漿是由如配合圖7所作說明的表面處 理系統所產生,此電漿為一“平展”型電漿,通常與基質 表面形成共平面,且受控制具有最小垂直(依觀察)伸展。 藉產生平展電漿,可妥為控制汽化組成元素(來自基質)及 副元素(來自副來源),並侷限在欲接受處理的基質表面上。 此平展(低矮)電漿的形態及其直接接觸基質表面有利 於直接在基質表面上允許造成(成長)一鍍層。換句話說, 平展電漿與基質表面相互作用。這點與CVD系統其電漿形 狀呈如同高圓柱體,鍍層如同“落雨”淋在基質表面上者 對照明顯,且容許以相當高鍍覆率形成鍍層。 對平展電漿所產生的本發明極顯著的一個優點為可形 成此種平展電漿,且真空吸持可補助此平展電漿的形成。 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 除此之外,如圖8所示,由本發明方法所產生的電漿可造 成四周包圍被處理基質的各周緣。這種電漿的包圍(基質 的各周緣)能藉設置貫通支座的多個補助真空通道814而 增強,這些通道的出口位於突起8 0 8外側的支座頂面但在 基質下方的區域内。用來保持基質在支座上的相同(或另 外的)真空可用來增大(加強)電漿包圍基質周緣之效果。 由雷射及電漿組合所達成的反應機構可分為“熱解” 及“光解”,通常在熱解機構中,雷射具有下列作用: (a)局部加熱基質以在需要造成鍍層的表面上誘發熱 -55 - 本紙張尺度適用中國國家標準(CNS ) A4规格(210X 297公釐)Is. To print A7 from the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. _____B7_ V. The secondary source on the description of invention (52), combined with the relatively narrow nozzle design as shown in Figures 5A & 5B, it is suitable for the implementation shown in Figure 1. The entire process steps and are suitable for implementing the pre-processing discussed with respect to Figs. 6A and 6B. This surface treatment system 700 includes three lasers: a UV-excited primary laser (laser 1) 712, an infrared _:? &Amp; 0 laser (laser 2) 714, and an infrared C02 laser (laser 3) 716. Each laser emits a light beam, which is directed through the opening of the nozzle 722 to the surface of the substrate 702. The nozzle 722 has an axis line 72 3 which is preferably perpendicular (90 °) to the surface of the substrate 702. Excited atomic laser 712 is directed at the substrate surface at a first angle “θ 1”, Nd: YAG laser 714 is directed at the substrate surface at a second angle “θ 2”, and C02 laser 716 is directed at a third angle "Θ3" hits the surface of the substrate. In an exemplary embodiment of the present invention, the first angle β 1 = 0 ° (parallel to the concentric line of the nozzle), and the second angle θ 2 = 30. And the third angle θ; B = + 30. . However, the three laser beams can pass through the opening of the nozzle to be coaxial or parallel to each other (that is, θΐ, θ2, θ3 = 0.) The emitters are still within the scope of the present invention. The nozzles &quot; 722 are disposed at a distance "h" above the surface of the substrate 702. A gaseous secondary source (SS) 72 (for example, a carbon-containing gas such as carbon dioxide gas) is supplied through a nozzle 722, and a shielded (isolated) gas (SG) 724 (non-reactive or inert gas such as nitrogen, helium, argon, etc.) Etc.) are also provided via nozzles. Generally, the three laser beams are emitted through a nozzle and focused on a selection area of the substrate 702, as described above with reference to FIG. 3. However, it is still within the scope of the present invention to adjust the size of the three laser lights so that each beam can completely cover the entire surface of the substrate (the selected area includes the entire surface of the substrate). In this embodiment, the substrate is a rectangular substrate with "χ ,, and" γ, "the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page )-} J ^^^ 1 ml ^^^ 1 ι ^ ϋ n ^ i- mu 1 ^ m · m ^ l ^ -r-ejnn 11 _. ^^ 1 n ^ n A7 B7 V. Description of the invention (53 ) Dimensions and are moved along the Y axis during surface treatment. In use, the gas (720, 724) is turned on directly above the surface of the substrate 702 and below the nozzle (as viewed) to form a plasma (not shown in this figure, please refer to Figure 8). As before, the secondary source is converted in the plasma along the vaporized constituent elements to form a coating on the surface of the substrate. In general, the role of the excitatory atom laser 712 is to complete surface melting, destroy secondary sources (SS), and heuristic bond formation and growth (cause) a coating on the surface of the substrate; and Nd: YAG laser 714 assists the excitatory atom Laser 712 destroys the secondary source gas and plays an excellent role in diffusion; while CO2 laser 716 helps maintain the thermal equilibrium of the reaction in the plasma and on the substrate. Keeping this in mind, although all three laser beams preferably penetrate the nozzle, it is also within the scope of the present invention to direct the beam from the C02 laser 716 into the plasma without going through the openings in the nozzle. [Matrix support and flat plasma (Fig. 8)] Fig. 8 shows a preferred form of the supporting device of the substrate 802 to be treated and the plasma generated during the surface treatment process. Printed by J Industry Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling this page). A significant advantage of the present invention is the ability to form a flat plasma that is very close to the surface of the substrate being processed. In addition, this flat Plasma can surround the corners of the substrate, and is beneficial for coatings on round tools such as drills. Plasma “transfers” secondary elements to the surface of the substrate and ensures that the substrate is locally heated in large quantities. In this embodiment, the substrate 802 is placed on a support 804 having a button-like protrusion 808 extending upward from the top surface (as viewed). The protrusion 808 is preferably smaller than the area of the substrate supported, and the substrate is concentrically placed on the protruding -54 — this paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) A7 B7 V. Description of the invention (54) On the top surface. A vacuum channel 810 passing through the support 804 is suitable for "holding" (holding) the substrate on the support, and is very suitable for performing automatic substrate processing operations in a production environment. The plasma shown in Figure 8 is produced by a surface treatment system as described in conjunction with Figure 7. This plasma is a "flat" plasma that is usually coplanar with the surface of the substrate and is controlled to have a minimum vertical ( By observation) stretch. By generating a flat plasma, vaporized constituent elements (from the substrate) and secondary elements (from the secondary source) can be properly controlled and confined to the surface of the substrate to be treated. The morphology of this flat (low) plasma and its direct contact with the substrate surface are conducive to allowing (growth) a coating directly on the substrate surface. In other words, the flat plasma interacts with the surface of the substrate. This is in contrast to the CVD system where the plasma shape is like a high cylinder, and the plating layer is like "falling rain" on the surface of the substrate, and allows the plating layer to be formed at a relatively high plating rate. An extremely significant advantage of the invention produced by the flattened plasma is that such a flattened plasma can be formed, and vacuum holding can subsidize the formation of this flattened plasma. Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling this page). In addition, as shown in Figure 8, the plasma generated by the method of the present invention can cause Every perimeter. This enclosing of the plasma (the peripheral edges of the substrate) can be enhanced by providing a plurality of auxiliary vacuum channels 814 penetrating the support, and the outlets of these channels are located on the top surface of the support outside the protrusion 8 0 but in the area below the substrate. . The same (or additional) vacuum used to maintain the substrate on the support can be used to increase (enhance) the effect of the plasma surrounding the periphery of the substrate. The reaction mechanism achieved by the combination of laser and plasma can be divided into "pyrolysis" and "photolysis". Generally, in the pyrolysis mechanism, the laser has the following functions: (a) locally heating the substrate to cause the coating Induced heat on the surface -55-This paper size applies to China National Standard (CNS) A4 (210X 297 mm)

五、發明説明(55 ) 經濟部中夬檩準局員工消費合作祍印製 反應; (b)也可以使此雷射能量為初步激發成為非能使分解 的肤態的反應劑吸收; (C)可同時加熱基質及氣體; (d)當雷射直接加熱基質時,表面附近的氣體被擴散 及對流機構而加熱及分解。 一般而言,在光解機構(或光化學過程)中,雷射具有 將氣相或表面吸附分子分解形成沈積原子或中間物而 而 大量熱量加熱氣體或基質表面的作用。雷射激發可藉吸收 —紫外光子或吸收數個可見或紫外光子以激勵電子轉移而 發生。在後者的情形時,吸收可以協同作用方式如以多光 子吸收,或者以順序作用方式,事實可包括由中間產物吸 收光子之方式下而發生。光解產物可進一步由熱解過程而 分解。 通常,一個激態原子雷射的輸出能有效地由二氧化碳 (如來自副來源)所吸收,此將導致光化學反應以破壞C_〇 鍵而形成金剛石膜或無效中間物。因為二氧化碳相斷於时: YAG雷射輸出本質上是透明的,此Nd : YAG雷射輸出主要由 激態原子雷射所造的無效中間物及基質或某種覆蓋在基質 上的薄膜所吸收的。 【對系統進行操縱(圖9 )】 圖9大略說明一整個表面處理系統9〇〇(與系統7〇〇相 同),圖中,一基質902係配置於喷嘴下方(為方便說明起 見,於示意圖中省略),來自雷射910的能量是照射在基質 本紙張尺度適用中國國家襟準(CNS ) Α4规格(210Χ297公釐) --------W-- (請先聞讀背面之注意事項再填寫本頁) -訂 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(56 ) 上,以在基質表面内及緊接在基質表面上方(包括平展電 漿的形成產生反應作用,自一個或多個副來源92〇引入一 種或多種副元素以增強在基質上發生的反應,而基質可藉 —多軸定位機構93〇 (例如:多軸機械臂)來加以轉動,這 些組件的運作則是由一控制器94〇(諸如:一適當的程式規 劃電腦)來予以控制。重要的,本系統可對各雷射91〇的 定時(例如:開啟和斷開的順序)以及由各個雷射所輸送的 脈波間的關係,進行控制。 【實施例】 以下是利用一種配合圖7所描述的表面處理,進行碳 化鎢(硬質合金》基質前處理及製成金剛石鍍層的各實施例。 “任何此類方法中自少不了有很多種變數,使這個方法 的“訣竅”因一種基質(例如:材質,幾何形狀,尺寸大 小等)與另一種基質之不同而有所不同。如Kabac〇if的專 利(第5,176,788號)中所適切地注意到一般,隨著此方法 而產生的變數非常多,複雜且相互關聯,而使得計算或預 測,常之困難。通常,一種較好的方式是在一個合理的參 數範圍内,嘗試不同的製程參數來觀察所獲得的結果,並 憑經驗將此製程最佳化。 大體上,按照本發明在基質上產生一艘層之裝置由三 個雷射構成,每個雷射具有屬它本射的光束(射束)輸出系 統(BDS)。該裝置採用一個噴嘴將一個包封在保護(屏蔽) 氣體(SG)内的副來源(ss)喷出,並在基質表面產生一平展 電漿。尤其是,就在碳化鎢基質上製成金剛石鍍層這點來 (請先閲讀背面之注意事項再填寫本頁) H— —^1 1_1 ^^1 I m· ^^1 m - —I— I ^^1 ^^1 n. I - -、一ejIn n - m --- 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(57) 說,可將基質進行前處理以便随後利用任何一適當方式, 包括依本發明的方法進行鍍覆,而在基質上形成一鍍層, 或是完成包括一前處理作業和一鍍覆作業的完全表面處理 過程。 以下的實施例中,將一個扁平碳化物切削工具插入物 (嵌刃)基質(基材)施以前處理或是處理(即前處理及鍍覆) 以形成一金剛石(或DLC)鍍層。為簡便起見,假設將整個 基質一次完成處理(即,光束的大小足夠“淹蓋”整個基 質面積)。一種如配合圖7及9時所敘述的表面處理裝置 採用於此。 圖10為一處理時序圖,說明前處理一基質以便隨後製 成一鍍層(或利用CVD等方法殿積一鍍層)的方法。 圖10A為一處理時序圖,說明同時(就地)對基質進行 前處理及製成鍍層的方法。 圖11A為顯微照相,說明於實施此種前處理之前的碳 化鶴切削工具插入物(基質)的表面及圖11B為圖11A的碳化 鶴基質於經前處理之後的顯微照相。如圖11A中所示,基 質的表面上佈滿磨痕和雜質。如圖11B中所示,基質的表 面上並無任何磨痕和雜質,且碳化鎢晶粒係顯露於鈷谷當 中(與圖6B比較)。 如圖10中所示,本發明前處理方法僅涉及激態原子雷 射,而燒蝕姑係利用氪保護氣體適當地予以徘除,此氪保 護體是透過噴嘴( 550 )適當地引入,然而,也可藉由另一 種經簡化的噴嘴(圖中未示)越過基質的表面而引入。 -58 - 本紙張又度適用中國國家標率(CNS ) A4規格(210X297公釐) --------ίν衣-- (請先閎讀背面之注意事項再填寫本頁) -訂 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(58 ) 圖10A為一處理時序圖,說明於一包含前處理及鍍層 製成作業的完全表面處理方法中雷射和副束源及保護氣體 的協調結合。 如圖10A所說明一般,通當三種雷射(激態原子雷射、 Nd : YAG雷射器及C0 2雷射器)及兩種氣體(C0 2作為副來源 和心作為保護氣體)係一致操作,以進行兩種“作業”一 前處理作業和鍍覆作業一的表面處理。圖10為一說明這些 組件的每一件被開啟及關斷的時間圖解,時序圖上的數字 (例如:“0” ,“12” ,“25”等等)表示秒。 如同配合圖6A和6B相關所討論一般,可適當地採用本 發明之表面處理裝置來進行基質的前處理作業。 圖10說明了 一時間間隔為“PO”與“P1”之間長達約 20秒的前處理狀沉,其中只利用激態原子雷射(例如:&quot;712 ) 對基質進行前處理,以準備基質表面作進一步處理。 如圖10中所示,前處理階段期間,同時開啟氪(保護) 氣體將燒蝕材料(鈷,氧化物)自基質排出,最好在斷開激 態原子雷射之後仍保留氪氣體一短暫時間(從“P1”到“ P2”)以確保燒蝕材料全部從基質表面上除去。 如圖10A所說明一般,也可以進行結合前處理與鍍層 製造的表面處方法,這一點,在“to”時即開始表面處理 。整個表面處理過程期間,從時間“t0”延長到時間“t5” 時即開啟激態原子雷射(例如:712),副來源(例如:720) 和保護氣體(例如:724)。 在整個表面處理過程中(從“t0”直至“t5”)通常是 -59 - 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公釐) --------©^Λ衣-- (請先閱讀背面之注意事項再填寫本買) -訂 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(59 ) 根據以上所設定的參數來操作該激態原子雷射,然而,在 艘覆作業期間可“飛越,,地調節激態原子雷射輸出,以顯 著地啟動前處理作業(於時隔“to”和“ tl,,之間)及從在 時間t3時可能斷開的Nd : YAG雷射取得“他鬆”(將於 下文中討論)。在此表面處理過程期間,激態原子雷射係 在45〇mJ脈衝頻率為28〇Hz下適當地運作。 由圖10A所說明一般,沒有必要在“t〇”時就立即開 啟Nd : YAG雷射(例如:^4),反而可將其首次進入方法中 (鍍覆作業)事延遲一短暫時間間隔(例如:5秒)。通常, 在此僅有激態原予之間隔(“t〇,,至“tl”)期間,可對基 質的一前導(前緣)區進行前處理(見例如:圖12b)。同樣 地’在整個鏡覆作業期間Nd : YAG雷射的參與是不必要的 ,而這樣會造成在“〇,,時一早期退出,大約是斷開激態 原子雷射前1 〇秒(例如:12 )。 同樣地,由圖1〇A所說明一般,不必要於“t〇,,時立 即開啟C〇2雷射(例如:π6),反而可將其首次出現進入方 法中事延遲一短暫時間間隔(例如:12秒)。同樣地,在整 個處理階段期間(:02雷射的參與是不必要的,而這樣會造 成在“t4”時一早期退出,大約是斷開激態原子雷射前5 秒0 尤其是: 1.第一雷射:激態原子雷射在表面燒蝕(熔除)及破壞 副來源(例如:co2)中的化學鍵扮演主要角色,並具有以 下電子束輸送參數: _ 6 0 一 本紙張尺度通用中國國家標準(CNS ) A4規格(210 X 297公釐) ---- - n - n - 」冬-I (請先閲讀背面之注意事項再填寫本頁) -訂 經濟部中央標準局員工消費合作社印製 A7 _____B7 五、發明説明(7~~~ ~- a·波長l92nm ’ 248nn^3〇8nm (毫微米),屬於波長紫 外線範圍内以248nm為佳; b.功率輸出最咼達2〇〇 w(瓦特),尤以10〇 w(—個較 低功率例如:75 W可採用於圓形刀具)為佳; C.脈衝能量最高達5〇〇mJ(毫焦耳),尤以45〇mJ為佳。 d. 脈衝序列頻率(重複頻率)可高達3〇〇 Hz(赫茲),尤 以280 Hz為佳; e. 能量密度最咼達3〇 mj/mm2,尤以25mJ/mm2為佳; ί.脈衝持續時間最高達26ns(毫微秒),尤以18ns為佳. g .電子束圖型呈矩形;及 ’ h·發散量為3.5毫弧度(1^3£1) 激態原子雷射的電子束輸出系統(BDS )包括一敍.形 鏡片以輸出具有尺寸大小為1 mm Xl/2 inch的苑形電子 光束(聚焦束),鏡片係設置於離與噴嘴轴對準的噴嘴上游 (朝雷射方向)大約18英寸處。 僅進行前處理作業(例如:圖6B}時,將激態原子雷射 於100瓦特、頻率為22〇_25〇Hz下進行脈衝作用350-380 mJ 下開啟2〇秒,並進行表面燒蝕(清除表面紋痕和雜質,將 基質一表面區的鈷清除)。 進行完全的表面處理(即:結合前處理和鍍覆作業)時 ,於100瓦特、頻率為28〇 Hz下進行脈衝作用45〇 mj下, 將激態原子雷射開啟45秒,並執行(i )使副來源(c〇 2)中的 化學鏈起反應並斷裂之,反(ii)引發供鍵合和成長的合成。V. Description of the invention (55) Printing cooperation response of the employees of the quasi bureau of the Ministry of Economic Affairs of the Ministry of Economic Affairs; (b) the laser energy can also be initially stimulated to absorb non-decomposable skin-state reactants; (C) ) The substrate and gas can be heated at the same time; (d) When the laser directly heats the substrate, the gas near the surface is heated and decomposed by the diffusion and convection mechanism. Generally speaking, in the photolysis mechanism (or photochemical process), laser has the effect of decomposing gas-phase or surface adsorption molecules to form deposited atoms or intermediates, and a large amount of heat heats the surface of the gas or substrate. Laser excitation can occur by absorption—UV photons or the absorption of several visible or UV photons to stimulate electron transfer. In the latter case, absorption can occur in a synergistic manner, such as multi-photon absorption, or in a sequential manner, and the fact can include the way in which photons are absorbed by intermediate products. The photolysis products can be further decomposed by the pyrolysis process. Generally, the output of an excimer laser can be effectively absorbed by carbon dioxide (such as from a secondary source), which will cause a photochemical reaction to break the C_〇 bond to form a diamond film or an invalid intermediate. Because the carbon dioxide phase is interrupted by: YAG laser output is essentially transparent, and this Nd: YAG laser output is mainly absorbed by ineffective intermediates and substrates made by an excimer atom laser, or some kind of film covering the substrate. of. [Manipulating the system (Fig. 9)] Fig. 9 roughly illustrates a whole surface treatment system 900 (same as the system 700). In the figure, a substrate 902 is arranged below the nozzle (for convenience of explanation, the (Omitted in the diagram), the energy from the laser 910 is irradiated on the substrate. The paper size applies the Chinese National Standard (CNS) A4 specification (210 × 297 mm) -------- W-- (Please read the back first Please pay attention to this page and fill in this page again)-Order A7 B7 printed by the Employees' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs on the description of the invention (56), in the surface of the substrate and immediately above the surface of the substrate (including the formation of flat plasma) Generate a reaction effect, introduce one or more auxiliary elements from one or more auxiliary sources 92 to enhance the reaction on the substrate, and the substrate can be rotated by a multi-axis positioning mechanism 930 (for example: a multi-axis robotic arm) to rotate The operation of these components is controlled by a controller 94 (such as an appropriate programming computer). Importantly, the system can time the timing of each laser 9 10 (for example, the sequence of turning on and off) ) And by The relationship between the pulse waves delivered by the lasers is controlled. [Examples] The following are examples of performing a tungsten carbide (hard alloy) substrate pretreatment and forming a diamond coating using a surface treatment described in conjunction with FIG. "There are many variables in any such method. The" know-how "of this method is different because of the difference between one substrate (such as material, geometry, size, etc.) and another substrate. For example, Kabac〇 In the if patent (No. 5,176,788), it is appropriately noted that in general, with this method, there are many variables, complex and interrelated, making calculations or predictions often difficult. Generally, a better way is Within a reasonable range of parameters, try different process parameters to observe the results obtained and optimize this process empirically. Generally, the device for generating a layer on a substrate according to the present invention consists of three lasers. Structure, each laser has its own beam (beam) output system (BDS). The device uses a nozzle to encapsulate one Shield) The secondary source (SS) in the gas (SG) is ejected, and a flat plasma is generated on the surface of the substrate. In particular, the diamond coating is made on the tungsten carbide substrate (please read the precautions on the back first) (Fill in this page again.) H— — ^ 1 1_1 ^^ 1 I m · ^^ 1 m-—I— I ^^ 1 ^^ 1 n. I--, ejIn n-m --- Central Standard of the Ministry of Economic Affairs Printed by the Consumer Cooperative of the Bureau A7 B7 V. The description of the invention (57) states that the substrate can be pre-treated so that it can be plated by any suitable method, including the method of the present invention, to form a coating on the substrate. Or complete the surface treatment process including a pre-treatment operation and a plating operation. In the following embodiments, a flat carbide cutting tool insert (insert blade) substrate (substrate) is pretreated or treated (ie, pretreated and plated) to form a diamond (or DLC) coating. For simplicity, it is assumed that the entire substrate is processed at once (ie, the beam size is sufficient to "flood" the entire substrate area). A surface treatment device as described in conjunction with Figs. 7 and 9 is used here. Fig. 10 is a processing timing chart illustrating a method of pre-treating a substrate to subsequently form a plating layer (or depositing a plating layer by a method such as CVD). Fig. 10A is a processing timing diagram illustrating a method for simultaneously (in-situ) pre-treating a substrate and forming a coating. FIG. 11A is a photomicrograph illustrating the surface of a carbonized crane cutting tool insert (matrix) before performing such a pretreatment and FIG. 11B is a photomicrograph of the carbonized crane substrate of FIG. 11A after the pretreatment. As shown in Fig. 11A, the surface of the substrate is covered with abrasion marks and impurities. As shown in Fig. 11B, the surface of the substrate is free of any wear marks and impurities, and the tungsten carbide grains are exposed in the cobalt valley (compared with Fig. 6B). As shown in FIG. 10, the pretreatment method of the present invention only involves an excimer atomic laser, and the ablation system is appropriately evacuated with a thorium protective gas, and the thorium protective body is appropriately introduced through a nozzle (550), however, It can also be introduced through another simplified nozzle (not shown) across the surface of the substrate. -58-This paper is again applicable to China National Standards (CNS) A4 specifications (210X297 mm) -------- ίν 衣-(Please read the precautions on the back before filling this page)-Order Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the Invention (58) Figure 10A is a processing sequence diagram illustrating the laser and auxiliary beam sources in a complete surface treatment method including pre-treatment and coating production And the coordination of protective gas. As shown in FIG. 10A, generally, the three types of lasers (excitation atomic laser, Nd: YAG laser and C0 2 laser) and two gases (C0 2 as the secondary source and heart as the protective gas) are consistent. Operate to perform two "jobs", a pre-treatment job and a surface treatment of a plating job. Figure 10 is a diagram illustrating the time when each of these components is turned on and off. The numbers on the timing diagram (for example: "0", "12", "25", etc.) represent seconds. As discussed in conjunction with Figs. 6A and 6B, the surface treatment apparatus of the present invention can be suitably used for substrate pretreatment. Fig. 10 illustrates a pretreatment sinker with a time interval of about 20 seconds between "PO" and "P1", in which only an excimer laser (eg, &quot; 712) is used to pretreat the substrate to Prepare the substrate surface for further processing. As shown in FIG. 10, during the pre-treatment phase, the plutonium (protective) gas is turned on at the same time to discharge the ablation material (cobalt, oxide) from the substrate. It is best to retain the plutonium gas for a short time after the exciter atomic laser is turned off. Time (from "P1" to "P2") to ensure that the ablation material is completely removed from the substrate surface. As shown in FIG. 10A, in general, a surface treatment method that combines pre-treatment and plating manufacture can also be performed. At this point, the surface treatment is started at "to". During the entire surface treatment process, when the time "t0" is extended to the time "t5", the excited atomic laser (for example: 712), the secondary source (for example: 720) and the protective gas (for example: 724) are turned on. In the entire surface treatment process (from "t0" to "t5"), it is usually -59-This paper size applies the Chinese National Standard (CNS) A4 specification (210 × 297 mm) -------- © ^ Λ 衣-(Please read the notes on the back before filling in this purchase)-Order printed by the Consumers Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs, printed A7 B7 V. Description of the invention (59) Operate the excited-state atomic laser according to the parameters set above However, during the capping operation, the "fly-over" can be used to adjust the exciter atomic laser output to significantly start the pre-processing operation (at intervals of "to" and "tl ,," and from time t3). Possible disconnected Nd: YAG laser gains "tasson" (discussed below). During this surface treatment process, the excimer atomic laser system operates properly at a pulse frequency of 45 mJ at 28 Hz. As shown in FIG. 10A, it is generally not necessary to turn on the Nd: YAG laser immediately at "t0" (for example, ^ 4). Instead, it can delay its first entry into the method (plating operation) by a short time interval ( For example: 5 seconds). Generally, during this interval ("t0, to" tl ") where only the excitatory state is given, a leading (leading edge) region of the substrate can be pretreated (see, for example, Fig. 12b). Similarly, ' The participation of Nd: YAG laser is unnecessary during the entire mirror coating operation, and this will cause an early exit at "0," which is about 10 seconds before disconnecting the excited atomic laser (for example: 12) . Similarly, as illustrated by FIG. 10A, it is not necessary to turn on the C02 laser (for example, π6) immediately when “t〇” is needed. Instead, it can delay its first appearance into the method by a short time interval ( For example: 12 seconds). Similarly, during the entire processing stage (: 02 laser participation is unnecessary, and this will cause an early exit at "t4", which is about 5 off before the excitatory atomic laser is turned off. Seconds 0 In particular: 1. The first laser: the excimer atomic laser plays a major role in the surface ablation (melting) and destroying the chemical bond in the secondary source (for example: co2), and has the following electron beam transport parameters: _ 6 0 A paper standard common Chinese National Standard (CNS) A4 specification (210 X 297 mm) -----n-n-"Dong-I (Please read the precautions on the back before filling this page)-Order Printed by A7 _____B7 of the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (7 ~~~~-a. Wavelength l92nm '248nn ^ 308nm (nm), which belongs to the ultraviolet range of the wavelength, preferably 248nm; b. The power output is up to 200w (watt), especially 100w (a lower For example: 75 W can be used in a circular cutter). C. Pulse energy is up to 500mJ (millijoules), especially 45mJ. D. Pulse sequence frequency (repetition frequency) can be up to 3 〇Hz (Hertz), especially 280 Hz is preferred; e. The energy density is up to 30mj / mm2, especially 25mJ / mm2; ί. The pulse duration is up to 26ns (nanoseconds), especially 18ns is preferred. G. The electron beam pattern is rectangular; and the h · divergence is 3.5 milliradians (1 ^ 3 £ 1). The electron beam output system (BDS) of an excited-state laser includes a shape lens. To output a circular electron beam (focused beam) with a size of 1 mm Xl / 2 inch, the lens is placed approximately 18 inches upstream (toward the laser) of the nozzle aligned with the nozzle axis. Pretreatment only During operation (eg, Fig. 6B), the excited atomic laser is pulsed at 100 Watts at a frequency of 22-50 Hz, and the pulse is turned on at 350-380 mJ for 20 seconds, and the surface is ablated (removing the surface texture Marks and impurities to remove cobalt from a surface area of the substrate.) Complete surface treatment (ie, combining pretreatment and plating operations) , At 100 watts at a frequency of 28 Hz, pulsed at 45 mj, turn on the laser of the excited atom for 45 seconds, and perform (i) to react and break the chemical chain in the secondary source (c0) In the opposite, (ii) triggers synthesis for bonding and growth.

2.第二雷射:在擴散功能中扮演主要角色的Nd:YAG -61 _ 本紙張尺度適用中國國家標率(CNS ) A4規格(210X297公釐) --------k— (請先閲讀背面之注意事項再填寫本頁) .訂· A7 B7 五、發明説明(^ ) 〜〜 〇1 雷射可適當地具有以下電子束傳送參數: a. 波長為1.〇6微米,(E_6秒),在各波長的紅外線範 圍; b. 功率輸出最高達^⑽瓦特(w),以1〇〇〇瓦特為佳; c. 脈波能量最高達丨5。焦耳(了),以5〇焦耳為佳; d. 脈波次序頻率,連續波(cw),脈衡串式,或q交換 最咼達1000 Hz(赫茲),以12〇 Hz為佳; e .脈波持續時間最高達2 〇微秒,以1微秒為佳; f .電子束圖型為圓形;及 g.擴散量為55 mrad2. The second laser: Nd: YAG -61 which plays a major role in the diffusion function _ This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) -------- k— ( Please read the precautions on the back before filling this page). Order · A7 B7 V. Description of the invention (^) ~~ 〇1 The laser can appropriately have the following electron beam transmission parameters: a. Wavelength is 1.06 microns (E_6 seconds), in the infrared range of each wavelength; b. The power output is up to ^ ⑽ watts (w), preferably 1,000 watts; c. The pulse wave energy is up to 丨 5. Joules, preferably 50 Joules; d. Pulse wave order frequency, continuous wave (cw), pulse balance series, or q exchange up to 1000 Hz (Hertz), preferably 120 Hz; e Pulse duration is up to 20 microseconds, preferably 1 microsecond; f. Electron beam pattern is circular; and g. Diffusion is 55 mrad

Nd · YAG雷射的電子束輸送系統(BDS)包括一圓形透 鏡以輸送直徑為1/2英寸的圓形電子束(擴散型),該透鏡 係設置於離嗔嘴約1S英寸上游(朝雷射方向)自喷嘴軸约為 ~3〇° (於單向時為30。)的角度。 僅行前處理作業時’並未運轉Nd : γ AG雷射〇 進行包括前處理和鍍覆作業的整體表面處理方法中,The Nd · YAG laser electron beam delivery system (BDS) includes a circular lens to transport a circular electron beam (diffusion type) with a diameter of 1/2 inch. The lens is located approximately 1S inches upstream (toward the mouth) Laser direction) The angle from the nozzle axis is approximately ~ 30 ° (30 ° in one direction). When only the pre-treatment operation is performed, ’Nd: γ AG laser is not operated. In the overall surface treatment method including pre-treatment and plating operation,

Nd : YAG雷射至少處理過程的一部份(參看圖1〇厶,例如: tl至“t3”)是開啟中〇此时:YAG雷射,於1〇〇〇瓦特 、頻率12〇 Hz下進行脈衡作用在激態原子雷射開啟後5秒 鐘即被接通以便:(i)支援激態原子雷射去斷裂副來源(c〇2) 中的鍵,以及(ii)完成擴散結合中基本(或唯一)的作用。 3 ·第三雷射:於維持熱均衡中扮演主要角色的C〇 2雷 射可適當地具有以下電子束傳送參數: a.波長為10·6微米,在各波長的紅外線範圍; —62 — 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先聞讀背面之注意事項再填寫本頁) -訂 經濟部中央標準局貝工消費合作社印製 A 7 B7 五、發明説明(62 ) b. 功率輸出約為500至10,000瓦特(W),以2000 W為佳; c. 脈波序列頻率最高達25Hz,脈衝最高達25微秒;超 脈衝頻率最高達20 KHz(千赫),以及超脈衝持續時間最高 達500微秒; d. 能量密度最高達0.32 J/cm2 ; e. 電子束圖型為圓形; f. 發散量為1 1/2 mm/m;及 g. 在脈衝流模態中,脈衝流持績時間達5秒。 CO 2雷射的電子束俾送系統(BDS )包括一個圓形透鏡 ,以傳送半徑為1/2英寸的圓形電子束(擴散型),透鏡係 設置於離噴嘴約18英寸上游(朝雷射器方向)自噴嘴軸約為 + 30° (於與Nd:YAG雷射器方向相反的方向時為30° )的角 度0 僅行前處理作業時,並未運轉C02雷射。 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 進行結合前處理及鍍覆過程之方法時,此C02雷射在 激態原子雷射開啟後約12秒鐘(“t2”)後,開啟而於2000 瓦特、超脈衝頻率為1.5 kHz下進行2 8秒期間的脈衝作用 以便:(i)於此過程中(表面反應和氣體反應之間起協合作 用)維持熱均衡(ii)於過程中變換吸收率變化(iii)以1 ns (毫微秒)次序控制基質溫度。在過程快要結束之前可將C02 雷射斷開(例如:在“t4”的時候)。 通常,激態原子雷射與Nd : YAG雷射的脈衝共同作用 ,朝電漿成分“鎚擊”(產生震波,應力,及鬆弛),尤其 是使電漿成分分解。為此目的,由上述二雷射所俾送的脈 -63 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 五 、發明説明(6 3 A7 B7 衝間的相位關係視系統的特定應用情形最好調整(協調)為 能使協同鎚擊作用最隹化。這些參數充其量是憑經驗來測 定。 4. 電子束傳送系統:電子束傳送系統(BDS)將電射光 束輪送到表面處理“細胞’’(指進行表面處理的區域),確 定電予束的橫斷面和聚光點,包括上文中所欽述三個雷射 中每一個的透鏡。將激態原子電子束形成矩形(橫斷面)電 予束而將來自Nd : YAG雷射和〇:02雷射的各電子束形圓形( 橫斷面)電子束來傳送比較適當。 5. 保護(屏蔽)氣體:將副元素(ss)從周圍環境(例如 空氣)中加以隔離開的保護(惰性)氣體(SG),比較適 备的為,呈氣態式由噴嘴(例如:55〇)所傳送的氮(n2)。 在僅行前處理作業期間,氪氣是於前處理期間(〇至2〇 秒)以流量為4〇 sccm下被引進來,氮氣可將燒蝕鈷或氧化 .物除去。前處理作業結束時’氪氣依然會多.流動數秒鐘, 以確保不需要的(例如:燒蝕)元素完全從基質的表面上被 沖洗去(導引開)。 在完全的综合表面處理過程期間,氪氣是於整個處理 期(例如:當激態原子雷射在開啟之際為45秒)以流量為25 SCCIU下被引進來。此過程期間,氪氣乃一直穩定並保護( 例如:不受周圍環境影響)這處理過程。通常,保護氣體 (例如:氮)的目的在於防止有殘餘氣化物的形成(防止與 大氣氧結合)。氮保護氣體的作用為:⑴防止氧化物的形 成⑵使燒触鈷及/或碳化鎢遠離表面及⑶有需要時形成氮 -I :----P^J—I (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局員工消費合作社印製 -64 -Nd: YAG laser is at least part of the process (see Figure 10, for example: tl to "t3") is on. At this time: YAG laser, at 1000 Watts, frequency 12Hz Pulse balancing is turned on 5 seconds after the exciter atomic laser is turned on to: (i) support the exciter atomic laser to break the bond in the secondary source (c0), and (ii) complete diffusion bonding Basic (or sole) role. 3. The third laser: The Co2 laser, which plays a major role in maintaining thermal equilibrium, may suitably have the following electron beam transmission parameters: a. The wavelength is 10.6 microns in the infrared range of each wavelength; -62- This paper size applies to China National Standard (CNS) A4 (210X297 mm) (please read the precautions on the back before filling out this page)-Order printed by the Central Standards Bureau of the Ministry of Economic Affairs and printed by the Bayer Consumer Cooperatives V. Invention Explanation (62) b. Power output is about 500 to 10,000 watts (W), preferably 2000 W; c. Pulse sequence frequency up to 25Hz, pulse up to 25 microseconds; super pulse frequency up to 20 KHz (thousands) Hz), and the duration of the super pulse is up to 500 microseconds; d. The energy density is up to 0.32 J / cm2; e. The electron beam pattern is circular; f. The divergence is 1 1/2 mm / m; and g In the pulse flow mode, the pulse flow lasts for 5 seconds. The CO 2 laser electron beam delivery system (BDS) includes a circular lens to transmit a circular electron beam (diffusion type) with a radius of 1/2 inch. The lens is located approximately 18 inches upstream from the nozzle (toward the mine The direction of the emitter) is about + 30 ° from the nozzle axis (30 ° in the direction opposite to the direction of the Nd: YAG laser). 0 The C02 laser is not running during pre-processing only. Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling this page) When performing the pre-treatment and plating process, this C02 laser is about 12 seconds after the excimer laser is turned on. After the clock ("t2"), turn on and perform a pulse action for 2 8 seconds at 2000 watts and a superpulse frequency of 1.5 kHz in order to: (i) in the process (the synergy between the surface reaction and the gas reaction ) Maintaining thermal equilibrium (ii) Transforming changes in absorbance during the process (iii) Controlling substrate temperature in 1 ns (nanosecond) order. The C02 laser can be switched off just before the process is finished (eg at "t4"). In general, the pulses of the excited-state laser and Nd: YAG laser work together to "hammer" the plasma components (generate shock waves, stress, and relaxation), especially to decompose the plasma components. For this purpose, the pulse sent by the above two lasers -63-This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) V. Description of the invention (6 3 A7 B7 Phase relationship between punches It is best to adjust (coordination) for the specific application situation of the machine to maximize the effect of cooperative hammering. These parameters are determined empirically at best. 4. Electron beam delivery system: The electron beam delivery system (BDS) rotates the radio beam Go to the surface treatment "cell" (refer to the area where the surface treatment is performed), determine the cross-section and the focal point of the beam, including the lens of each of the three lasers described above. The beam forms a rectangular (cross-section) electron beam, and it is more appropriate to transmit each electron beam-shaped circular (cross-section) electron beam from the Nd: YAG laser and the 0:02 laser. 5. Protection (shielding) Gas: A protective (inert) gas (SG) that separates the secondary elements (SS) from the surrounding environment (such as air). It is more suitable to use nitrogen delivered by a nozzle (such as 55) in a gaseous form. (N2). Preprocess job only In the meantime, radon gas is introduced during the pretreatment period (0 to 20 seconds) at a flow rate of 40 sccm. Nitrogen can remove ablated cobalt or oxides. At the end of the pretreatment operation, radon gas will still be high. Flow for a few seconds to ensure that unwanted (eg, ablated) elements are completely washed away (guided away) from the surface of the substrate. During a complete integrated surface treatment process, radon is used throughout the treatment period (eg : When the exciter atomic laser is turned on for 45 seconds) is introduced at a flow rate of 25 SCCIU. During this process, radon is always stabilized and protected (for example: not affected by the surrounding environment). This process is usually The purpose of the protective gas (for example: nitrogen) is to prevent the formation of residual gaseous substances (to prevent the combination with atmospheric oxygen). The role of the nitrogen protective gas is to: ⑴ prevent the formation of oxides 烧 keep burned cobalt and / or tungsten carbide away Nitrogen-I is formed on the surface and ⑶ when necessary: ---- P ^ J-I (Please read the precautions on the back before filling this page) Ordered by the Central Consumers Bureau of the Ministry of Economic Affairs and printed by the Consumer Cooperatives -64-

經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(α ) 64 化物(例如:一氪化二碳或一氪化二錄)用以呈1,0 , 〇平面 式(參看,例如•·圖11F )製成較佳的金剛石晶體取向。- 6. 副元素:含碳副來源氣體(SS),以呈氣態式由噴嘴 所傳送的C02為佳。至於其他含碳氣體,雖可採用,然而 一般來說不是有毒(例如:CO)就是容易燃燒(例如:甲烷)。 在僅行前處理作業期間,因不必要副來源也就無須引 入二氧化碳氣體。 在综合表面處理過程期間,二氧化碳氣體於整個處理 期(例如:當激態原子雷射在開啟之際為45秒)以流量為60 seem下被引進來。此過程期間,二氧化碳氣體(藉由雷射) 被分解成碳元素,作為副元素增加鍍層的形成。 7. 噴嘴:環形噴嘴具有設置在内半徑周圍的多個通道 ,噴嘴係位於基質表面上方大約6英寸處。選擇此噴嘴至 基質表面的間隙 “h”可使副元素在擴散到基質内之前起 離解和反應作用及/或在基質表面上製成鍍層。 8. 基質:基質為一種碳化鎢,呈矩形的切削工具插入 物(嵌刃),大小為1/2英寸X 1/2英寸。此類基質可含有W% 碳化嫣(W2C)與6%姑(Co)的黏合劑。由於姑具有轉移到表 面的傾向,用以製成金剛石(或像金剛石的碳)鍍層而言並 不恰當。本發明的目的係在於從表面(及表面下區域)上去 除姑,而這一作業是利用了鈷比碳化鎢蒸發更快的這個事 實的優點,於前處理作業時利用激態原子雷射達成。前處 理過後,碳化鎢晶體(晶粒)係顯露於基質表面上,而在表 面下方(皮下層)處碳化鎢晶體則是與鄰近的C 〇黏合劑結合 --------©,k-- (請先閱讀背面之注意事項再填寫本頁) 訂 -65 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐) 65 A7 B7 五、發明説明( 形成一恰當的W 2C-Co元素。表面的碳化鶴及表面下的碳化 鎢一鈷元素提供了隨後金剛石成長(於鍍覆作業期間)所需 的成核位置。 表面處理方法係在一含有92%WC,2%Ta(Nb)C和6% Co, 微粒大小,橫向斷裂強度為2〇0〇N/mm2(牛頓/毫米2 ),密 度為14.9 9/(^8(克/立方公分),及111^硬度為92.7的“ 庫存”鈷碳化鶴硬質合金(Latrobe,PA) “K68”等級切削 工具插入物上執行的。 同時,此表面處理方法也適用於例如:一含有93.5% WC,0.5% Cr8C2和6% Co,平均顆粒大小為lyu m(微米), 橫向斷裂強度為3〇00 N/nrn2 (牛頓/毫米2 ),密度為14.9 g/cm3 (克/立方公分),及HRA硬度為93·〇的“現品,,姑碳 化鶴硬質合金(Latrobe,;PA) “Κ313,,等級切削工具插入 物〇 本發明的整合表面處理方法,能普遍地適用於任何“ 現品基質者’而不需於處理進行前加以修改(例如:研 磨,触刻等等)該基質。 9‘電漿羽(Plasma plume):電漿羽呈顯圍繞基質的橫 斷面之歪曲形狀,而基質最好是由電漿羽橫跨以便將基質 的預定區域(例如:整個“頂部,,表面)加以被覆。 圖10B為一以三個在(幾種)不同的功率位準(1〇⑽; 87·5μ,75w )下操作的激態原子雷射之電子束功率(p(w), 垂直轴線)對脈波頻率(i ( Hz ),水平軸線)之圖形。如上文 所提到,l〇〇W的功率適合於處理扁平切削工具插入物,而 (請先閲讀背面之注意事項再填寫本頁) ---------------©4^------1T------ 經濟部中央標準局肩工消費合作社印製 -66 -Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Description of invention (α) 64 compounds (for example: two carbon monoxide or two carbon monoxide records) are used to show 1,0, 〇 plane (see, for example Fig. 11F) to make a better diamond crystal orientation. -6. Secondary element: Carbon-containing secondary source gas (SS), preferably C02 delivered by the nozzle in a gaseous form. As for other carbon-containing gases, although they can be used, they are generally either toxic (for example: CO) or easy to burn (for example: methane). During pre-processing operations only, the introduction of carbon dioxide gas is unnecessary as an unnecessary secondary source. During the integrated surface treatment process, carbon dioxide gas was introduced throughout the treatment period (for example: 45 seconds when the excimer laser was turned on) at a flow rate of 60 seem. During this process, the carbon dioxide gas (by laser) is decomposed into carbon elements, which increase the formation of the coating as a secondary element. 7. Nozzle: The annular nozzle has multiple channels arranged around the inner radius. The nozzle is located about 6 inches above the surface of the substrate. The gap "h" from this nozzle to the surface of the substrate is selected to allow the secondary elements to dissociate and react before diffusion into the substrate and / or to form a coating on the surface of the substrate. 8. Matrix: The matrix is a tungsten carbide, rectangular cutting tool insert (insert edge), 1/2 "x 1/2" in size. Such matrices may contain W% carbonized (W2C) and 6% (Co) adhesives. Due to the tendency to migrate to the surface, it is not appropriate to make a diamond (or diamond-like carbon) coating. The purpose of the present invention is to remove the surface from the surface (and the subsurface area), and this operation takes advantage of the fact that cobalt evaporates faster than tungsten carbide, and is achieved by using an excimer atomic laser during the pretreatment operation. . After the pre-treatment, tungsten carbide crystals (grains) are exposed on the surface of the substrate, and the tungsten carbide crystals below the surface (subcutaneous layer) are combined with the adjacent C 0 adhesive -------- ©, k-- (Please read the precautions on the reverse side before filling out this page) Order-65-This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 65 A7 B7 V. Description of the invention (form an appropriate W 2C-Co element. The carbide on the surface and the tungsten carbide-cobalt element below the surface provide the nucleation site required for subsequent diamond growth (during the plating operation). The surface treatment method is a 92% WC, 2% Ta (Nb) C and 6% Co, particle size, transverse breaking strength of 2000N / mm2 (Newton / mm2), density of 14.9 9 / (^ 8 (g / cm3), and 111 ^ "Stock" cobalt carbide carbide (Latrobe, PA) "K68" grade cutting tool insert with a hardness of 92.7. At the same time, this surface treatment method is also applicable to, for example: a 93.5% WC, 0.5% Cr8C2 And 6% Co, average particle size is lyu m (micron), transverse fracture strength is 3,000 N / nrn2 (cow / Mm2), density 14.9 g / cm3 (grams per cubic centimeter), and HRA hardness of 93.0 "ready-made, Gu Carbide carbide (Latrobe, PA)" K313, grade cutting tool insert 〇 The integrated surface treatment method of the present invention can be universally applied to any "ready-made substrate" without modifying the substrate (such as grinding, touching, etc.) before the treatment is performed. 9 'Plasma plume ): Plasma plume has a distorted shape around the cross-section of the substrate, and the substrate is preferably spanned by a plasma plume to cover a predetermined area of the substrate (eg, the entire "top," surface). Figure 10B is One at three (several) different power levels (10⑽; 87 · 5μ, 75w), the electron beam power (p (w), vertical axis) of the excited atomic laser is applied to the pulse wave Frequency (i (Hz), horizontal axis) graph. As mentioned above, a power of 100W is suitable for processing flat cutting tool inserts, and (please read the precautions on the back before filling this page)- ------------- © 4 ^ ------ 1T ------ Shoulder of Central Standards Bureau of Ministry of Economic Affairs Fee cooperatives printed -66--

A7 B7 五、發明説明(66) 75W的功率則適合於處理圓形切削工具。 圖10C為一供Nd : YAG雷射的程式資料的圖表0每一個 程式數字(1至13)均有一組對應脈波頻率,脈衝時間,泵 激脈波能量及最大頻率。 圖10D為一相當於配合圖10A所描述經歸納的參數之C02 雷射的詳細功率(垂直轴線)對時間(水平轴線)曲線圖。 下面就參考上述圖10B,10C及10D : (a) 為扁平切削工具插入物進行表面處理,激態原子 雷射係協同按照圖10C表上程式編號(PROGRAM NUMBER) 4 運轉的Nd : YAG雷射以及按照圖10D曲線圖運轉的C02雷射, 以輸出功率100W(瓦特),脈波持續時間為400 ms(毫秒)來 運轉; (b) 為扁平口刀具插入物進行表面處理,激態原子雷 射係協同按照圖10C表上程式編號(PROGRAM NUMBER)11運 轉的Nd:YAG雷射以及按照圖10D曲線圖運轉的C〇2雷射也可 以輸出功率為87.SW(瓦特),脈波持續時間為 350ms (毫秒) 來運轉;及 經濟部中央標準局員工消費合作社印製 I-1 n 1 I #- I (請先閲讀背面之注意事項再填寫本頁) 、π (C)為圓型刀具插入物(如以下配合圖1“所討論者) 進行表面處理,激態原子雷射係協同按照圖1〇c表上程式 編號(PROGRAM No. )11運轉的Nd:YAG雷射以及按照圖l〇D曲 線圖運轉的C〇2雷射以輸出功率為(瓦特),脈波持續時 間為3〇0 ms (毫秒)來運轉。 【顯微照片和拉曼分析】 圖11A,11B,lie,UD及11E的顯微照片及拉曼分析 -67 - 經濟部中央標準局員工消費合作社印製 A7 ____B7 五、發明説明(67 ) 法係關於上面所闡明者,於碳化鎢基質上製成一金剛石鍍 層之實施例。 圖11A為表面處理前一樣品(先前技術)的俯視顯微照 片,如圖中所示,一“現品”切削工具插入物會呈顯磨痕 累累的圖案(如圖中的斜線條即是),且同時在表面上會有 許多雜質(如圖中的斑點即是)。如上面所指明的除了燒蝕 鈷以及顯露碳化鎢細粒之外,最好是在鍍覆作業之前進行 前處理作業,以突顯基質表面的特性。圖11A,雖與圖6A 相關聯,但更加詳細地顯示了某些表面處理現有基質中固 有的課題。 圖11B為根據本發明在前處理之後圖11A樣品的俯視顯 微照片,如圖中所示有許多由姑“山谷” 1132(相當於圖 δΒ中的632)所圍繞著的碳化鎢“山峰” 1134(相當於圖⑼ 中的634 )。如此,為後續之鍍覆作業,基質表面被預先賦 與特性,其中碳化鎢山峰將為後續的金剛石(或DLC)成長 ,作用為加以界定的成核場。 圖11C為根據本發明加以鍍覆後之樣品的俯視顯微照 片,如圖中所顯示的,基質表面上已形成多個大致上呈均 句的金剛石結晶體(圖中該金剛石結晶體的曝露部份似如 棱錐形結構)。 圖11D係一取自處理過的樣品的拉曼光譜分析圖,垂 直轴表示吸收狀態而水平軸則表示波數。如圖中所顯示的 為一於I332 cnr1的銳(狹窄)峰,此銳峰提供了證據,證明 sp2晶相中鏡層含有碳,還有顯著量的類似金剛石的碳。 -68 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) !-I_----OPII (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(68) 如上文中所討論的,這樣的分析僅是一種說明性質而已, 並不對鍍層的“品質”具有任何決定性質;要做這樣的一 個決定還必需進行一些切削試驗方可。 圖11E係表示根據本發明施以鍍覆之後的樣品的侧視 (橫剖面)顯微照片,如圖中所示,一造材帶(轉移帶)1150 從基質表面延伸進入基質1152中一深度“d” ,及基質表 面上顯著有一厚度“t”的金剛石(或DLC)鍍層1154。根據 本發明經過表面處理過的樣品中,被觀測到的造材帶的深 度為10# 微米),及被觀測到的金剛石(或DLC)鍍層厚度 為45 # m。以鍍層作業為45秒而言,這一點證實具有大約 1 yUm/s (微米/秒)的鍍層成長率。 一種顯示在基質上完成了依本發明的表面處理過程的 “掩蓋不了的”跡象是:一些散亂零星(人造物)1156的複 合碳化物(例如:就處理碳化鎢切削工具插入物而言),氮 化碳及類似物,顯現在基質的造材(擴散)帶1150中。此造 材帶1150同時也可稱為一 “微分組成層”。這些(鍍層 的)“根”或是一類比特徵(視所製造中的鍍層材料以及 下面的基質材料而定),會在幾乎任何應用本發明之表面 處理方法所處理過的產品(基質)中顯現,並將可作為用來 區別利用本發明方法所製成的(證據)產品與利用其他(例 如:CVD)方法所製成的產品不同之人造物,特別是如果基 質為一含有金剛石或類金剛石碳鍍層的碳化鎢基質者。 本發明所具許多優點中尚包括在基質上並不需要“播 種”籽晶而可製成金剛石鍍層。由於局部加熱性質之故, -69 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(69 ) 總(質量 &gt;基質溫度可維持低至30°c。 [在基質上進行掃描】 如上面所述,本發明之表面處理系統適合用來處理基 質的選擇區域(而不是對整個表面一次完成)。一般而言, 這是雷射光束斷面形狀(橫斷面)的一個功能。利用適當的 調節光束的大小及形狀,選擇區域可跨過基質表面上整個 “區帶”,且可於處理期間推進基質,這樣,即可將整個 基質表面加以處理。 如在上文中所提到,來自三個雷射的電子光束可聚焦 在正接受處理中的基質的一個選擇區域上,而電子光束係 通過各自的光束傳送系統(參間,例如:圖3的單元322, 324和326 )被傳送(通常透過一排氣孔)到基質。已經確定 ,藉由對各個電子光束斷面形狀的控制可使本方法最佳化。 圖12A說明來自三個雷射的電子光束聚焦在基質12〇2 表面上。通常,利用對正受處理中的基質之尺寸大小而選 擇並控制電子光束的橫斷面。本實施例中,具有尺寸長寬 為“X”與“Y”的矩形基質;L2〇2正在接受表面處理(為圖 示清楚起見,將噴嘴省略),且正沿其¥_軸移動,如箭頭 1232(比較332,432)所指示。 激態原予雷射(例如·· ^2)是因矩形透鏡1252而產生 一長寬為a與‘b’’的麵形(橫斷面,斷面形狀)電子光 束I262 ’其中電子光束長邊“a”通常是與基質橫向長《X,, 對準,而電子光束寬邊“ b”通常是與基質的縱向寬“ γ” 對準。一般而言,長邊“a”是比較長些,因而把長邊《χ,, _ 70 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) (請先閱讀背面之注意事項再填寫本頁) -------------------|、玎--------------------- 經濟部中央標準局員工消費合作社印製 A7 一 B7 五、發明説明(70) 包容其中,以確保電子光束會完全涵蓋基質上一個矩形部 分(從一侧邊緣l2〇2c到相對的侧邊緣1202d)。促使基質相 對於電子光束(如箭頭:^32所指)移動,便會使激態原子光 束從基質1202的“前緣” 1202a到基質1202的後緣1202b, 通過(朝“Y”方向)基質12〇2整個表面。具有此種橫斷面 的電子光束通常會被看成聚焦光束。A7 B7 5. Description of the invention (66) The power of 75W is suitable for processing circular cutting tools. Fig. 10C is a chart of program data for Nd: YAG lasers. Each program number (1 to 13) has a set of corresponding pulse frequency, pulse time, pump pulse energy and maximum frequency. FIG. 10D is a detailed power (vertical axis) versus time (horizontal axis) curve of a C02 laser equivalent to the parameters summarized described in FIG. 10A. 10A, 10C and 10D mentioned above: (a) Surface treatment for flat cutting tool inserts. Excited atomic laser system cooperates with Nd: YAG laser operating in accordance with PROGRAM NUMBER 4 on the table of FIG. 10C And the C02 laser operating in accordance with the graph of FIG. 10D is operated with an output power of 100W (watts) and a pulse duration of 400 ms (milliseconds); (b) Surface treatment of a flat-blade tool insert, an excited atomic laser The Nd: YAG laser operating according to the program number (PROGRAM NUMBER) 11 on the table in Fig. 10C and the C02 laser operating according to the graph in Fig. 10D can also output a power of 87.SW (watts), and the pulse continues. Time is 350ms (milliseconds) to run; and printed by I-1 n 1 I #-I (Please read the precautions on the back before filling this page) and π (C) are round type. Tool inserts (as shown below in conjunction with Figure 1 "discussed") for surface treatment. Excited atomic laser systems cooperate with Nd: YAG lasers operating in accordance with the program number (PROGRAM No.) 11 on the table in Figure 10c and according to the figure. l〇D graph of the running CO2 laser to output Rate (Watts), pulse duration is 300 ms (milliseconds) to run. [Photomicrographs and Raman analysis] Figure 11A, 11B, lie, UD and 11E photomicrographs and Raman analysis -67 -Printed by A7 ____B7 of the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the invention (67) The example of the method described above is to make a diamond coating on a tungsten carbide substrate. Figure 11A shows a sample before surface treatment. (Prior art) A top-view photomicrograph, as shown in the figure, an "off-the-shelf" cutting tool insert will show a pattern of wear marks (as shown by the diagonal lines in the figure), and at the same time there will be Many impurities (such as the spots in the figure). As indicated above, in addition to ablating cobalt and exposing tungsten carbide fines, it is best to perform a pre-treatment before the plating operation to highlight the characteristics of the substrate surface. Figure 11A, although associated with Figure 6A, shows in more detail the problems inherent in some existing surface treatment substrates. Figure 11B is a top-view photomicrograph of the sample of Figure 11A after pre-treatment according to the present invention, as shown in the figure Show The tungsten carbide "mountain peak" 1134 (equivalent to 634 in Fig.)) Surrounded by the "valley" 1132 (equivalent to 632 in Fig. ΔB). In this way, the substrate surface is pre-applied for subsequent plating operations. And characteristics, in which the tungsten carbide peaks will be the subsequent growth of diamond (or DLC) and serve as a defined nucleation field. Figure 11C is a top-view photomicrograph of the sample after plating according to the present invention, as shown in the figure Yes, a plurality of diamond crystals with substantially uniform sentences have been formed on the surface of the substrate (the exposed part of the diamond crystals in the figure looks like a pyramidal structure). Fig. 11D is a Raman spectrum analysis chart taken from the processed sample. The vertical axis represents the absorption state and the horizontal axis represents the wave number. Shown in the figure is a sharp (narrow) peak at I332 cnr1. This sharp peak provides evidence that the mirror layer in the sp2 crystal phase contains carbon and a significant amount of diamond-like carbon. -68-This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297mm)! -I _---- OPII (Please read the precautions on the back before filling this page) Order the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs Print A7 B7 V. Description of the invention (68) As discussed above, this analysis is only a descriptive nature and does not have any decisive nature for the "quality" of the coating; to make such a decision, some cutting is necessary. Test only. 11E is a side view (cross-section) photomicrograph of a sample after plating according to the present invention. As shown in the figure, a material belt (transfer belt) 1150 extends from the surface of the substrate into the substrate 1152 to a depth "D" and a diamond (or DLC) coating 1154 with a thickness "t" on the surface of the substrate. In the surface-treated samples according to the present invention, the observed depth of the material strip is 10 # microns, and the observed diamond (or DLC) coating thickness is 45 #m. In the case of a plating operation of 45 seconds, this confirms a plating growth rate of approximately 1 yUm / s (micrometers / second). One "unmaskable" sign that the surface treatment process according to the present invention has been completed on the substrate is: some scattered (artificial) 1156 composite carbides (eg, in the case of processing tungsten carbide cutting tool inserts) Carbon nitride and the like appear in the matrix material (diffusion) zone 1150 of the matrix. This material strip 1150 may also be referred to as a "differential composition layer". These (coated) "roots" or an analogous feature (depending on the coating material being manufactured and the underlying substrate material) will be found in almost any product (substrate) that has been treated with the surface treatment method of the present invention Appear and will be used as an artifact to distinguish the (evidence) product made using the method of the present invention from products made using other (eg, CVD) methods, especially if the substrate is a diamond or similar Tungsten carbide substrate with diamond carbon coating. Many of the advantages of the present invention include the fact that a diamond coating can be made on the substrate without the need to "seed" the seed crystals. Due to the nature of local heating, -69-This paper size applies to Chinese National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling this page) Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Preparation A7 B7 5. Description of the invention (69) Total (mass) substrate temperature can be maintained as low as 30 ° c. [Scanning on substrate] As mentioned above, the surface treatment system of the present invention is suitable for the selection of substrate treatment Area (instead of completing the entire surface at one time). Generally speaking, this is a function of the cross-sectional shape (cross-section) of the laser beam. With proper adjustment of the beam size and shape, the selected area can span the surface of the substrate The entire "zone" and the substrate can be advanced during processing so that the entire substrate surface can be processed. As mentioned above, the electron beams from the three lasers can be focused on the substrate being processed A selected area of the laser beam, and the electron beam is transmitted through the respective beam transmission system (see, for example, units 322, 324, and 326 in FIG. 3) (usually transmitted through (A vent hole) to the substrate. It has been determined that the method can be optimized by controlling the cross-sectional shape of each electron beam. Figure 12A illustrates that the electron beams from three lasers are focused on the surface of the substrate 120. Generally, the cross-section of the electron beam is selected and controlled by the size of the substrate being processed. In this embodiment, a rectangular substrate with dimensions of "X" and "Y" in length and width; L202 is being accepted Surface treatment (the nozzle is omitted for clarity of illustration) and is moving along its ¥ _ axis, as indicated by arrow 1232 (compare 332, 432). Excimer laser (for example, ^ 2) is Due to the rectangular lens 1252, a plane (cross-section, cross-sectional shape) electron beam I262 'with a length and width of a and' b 'is generated, where the long side "a" of the electron beam is generally transverse to the substrate "X ,, Alignment, and the broad side "b" of the electron beam is usually aligned with the longitudinal width "γ" of the substrate. Generally, the long side "a" is longer, so the long side "χ ,, _ 70-this Paper size applies to China National Standard (CNS) A4 (210X 297 mm) (please first Read the notes on the back and fill out this page) ------------------- |, 玎 ----------------- --- Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7-B7 V. Description of the invention (70) It is contained to ensure that the electron beam will completely cover a rectangular part of the substrate (from the side edge 1220c to the opposite side) Edge 1202d). Promoting the substrate relative to the electron beam (as indicated by arrow: ^ 32) will cause the excited atomic beam from the "leading edge" 1202a of the substrate 1202 to the trailing edge 1202b of the substrate 1202 to pass ")) The entire surface of the substrate 1202. An electron beam with such a cross-section is often viewed as a focused beam.

Nd:YAG(例如:714)和(:02(例如:716)雷射是分別透 過球面透鏡I254和I256而產生圓形截面電子光束1264和1266 ’分別保持角度Θ 2和Θ 3衝擊基質表面(參間圖7 )。所示 的二電光束I264和I266可有相同的半徑為《r,,的圓形截 面,然而,此一電子光束是分別從激態原子光束1262的二 相1面被引導射向基質者。此二電子光束^以和^“的半 徑r最妤是大於基質的長寬尺寸的最大值(橫向長《χ” 或縱向寬“ γ ”)。 ,12Α中,電子光束1262,1264,1266是以虛線來加 以表示,而三個電子光束聚焦基質表面上因而產生之剖面 形狀則由虛線127〇來表示。此電子光束會聚之剖面形狀127〇 ,實際上應是在基質表面上,且由三個部份構成:⑴一包 括來自Nd:YAG和(:02雷射的電子光束會聚的第一通常呈半 圓形部份l27〇a ,⑵一包括來自Nd: YAG和c〇2雷射的電予光 車會聚的第二通常呈半圓形部份^此;及⑶一包括來自 激態原子,Nd:YAG*c〇2雷射的電子光束會聚的第三通常 呈矩形部份UMc,而該第三部份^卩化恰位於第一部份 1270a與第二部份1270]〇間0 —.111111^^.1- ^ I ---- —訂 (請先閲讀背面之注意事項再填寫本頁) -71 -Nd: YAG (for example: 714) and (: 02 (for example: 716) lasers pass through spherical lenses I254 and I256 respectively to generate circular cross-section electron beams 1264 and 1266 'keeping the angles Θ 2 and Θ 3 impacting the surface of the substrate ( (See Figure 7). The two electric beams I264 and I266 shown can have the same circular cross section with the radius "r ,," however, this one electron beam is respectively from the two phases and one side of the excited atomic beam 1262. Those who are directed to the substrate. The radius r of the two electron beams ^ and ^ "is at most the maximum value of the length and width dimensions of the substrate (the horizontal length" χ "or the vertical width" γ "). In 12A, the electron beam 1262, 1264, 1266 are represented by dashed lines, and the resulting cross-sectional shape of the three electron beams focusing on the surface of the substrate is represented by dashed line 127. The cross-sectional shape of this electron beam convergence should be 127 °, which should actually be in the matrix. On the surface, it consists of three parts: one includes the first generally semicircular portion 270a from which Nd: YAG and (: 02 laser beams converge), and one includes Nd: YAG and c〇2 The second convergence of the laser beamer is usually semicircular Part III; and (3) a third generally rectangular part Umc that includes the convergent electron beam from an excited atom, Nd: YAG * c02 laser, and this third part is located first Part 1270a and Part 1270] 〇 Between 0 —.111111 ^^. 1- ^ I ---- —Order (Please read the precautions on the back before filling this page) -71-

經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(71) 光束的形狀’如同配合圖]_2A所討論者係被採用在有 關對碳化鎢切削工具插入物進行鍍覆作業所說明的實驗例 上。 圖12B說明基質12〇2(呈橫剖面)係在聚集光束127〇(以 透視圖示)形狀下移動(如箭頭1210指示)。當基質於電子 光束下推進(移動)時,基質就漸進地從其前緣到其 後緣l2〇2b受到表面處理,如同圖面上一自基質丄2…的前 緣l2〇2a(以及局部超過)延伸至基質:L2〇2的後緣的選 擇區中的鍍層12〇4和一造材(轉移)區UO6所圖示的。按照 本文上面所闡明之程序參數,本發明的方法可成功地應用 於在碳化鎢基質上製成金剛石鍍層。 [特製鍍層(圖13A至13H)】 本發明之技術方法可用於在各種基質上製成不同種類 的鍍層,例如:如有關圖2B所討論的,一基質表面上可製 成多層鍍層。下面所提供的各圖,將描述許多此項工業技 術的應用以及利用此項技術所製造的產品之例證。就如同 上面所討論過後,對基質的選擇區可行選擇性的表面處理 。按照本發明之一目的,本發明的表面處理技術可適用在 基質上製成“特製”鍍層。 圖13A表示,含有可根據本發明技術方法以不同方式 進行處理的四個表面1304,1306,1308和1310的基質1302 。表面1304上製成鍍層1314,表面1306上製成鍍層1316, 表面1308上製成含有二個區段(1318a和1318b&gt;的鍍層,及 表面1310上製成鍍層1320。假定光束(未示)經常是從頂端 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -------Θ-C衣 —I (請先閲讀背面之注意事項再填寫本頁) -訂·Printed by the Consumers 'Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (71) The shape of the light beam' as shown in the figure] _2A The person in question was used in the description of the plating operation of tungsten carbide cutting tool inserts Experimental example. Fig. 12B illustrates that the substrate 1220 (in a cross section) moves in the shape of a focused beam 1270 (illustrated in perspective) (as indicated by arrow 1210). When the substrate is advanced (moved) under the electron beam, the substrate is gradually surface-treated from its leading edge to its trailing edge 1220b, just like the front edge 1220a (and a part of Exceedance) Extends to the substrate: The plating layer 1204 in a selected area of the trailing edge of L202 and a building material (transfer) area UO6 are illustrated. According to the procedure parameters set forth above, the method of the present invention can be successfully applied to make diamond coatings on tungsten carbide substrates. [Special coatings (Figs. 13A to 13H)] The technical method of the present invention can be used to make different kinds of coatings on various substrates. For example, as discussed in relation to Fig. 2B, a plurality of coatings can be formed on a substrate surface. The figures provided below describe many of the applications of this industrial technology and examples of products manufactured using this technology. As discussed above, selective surface treatment of selected areas of the substrate is possible. According to one object of the present invention, the surface treatment technique of the present invention can be applied to make "special" coatings on a substrate. Figure 13A shows a substrate 1302 containing four surfaces 1304, 1306, 1308, and 1310 that can be treated in different ways according to the technical method of the present invention. A plating layer 1314 is formed on the surface 1304, a plating layer 1316 is formed on the surface 1306, a plating layer containing two sections (1318a and 1318b &gt;) is formed on the surface 1308, and a plating layer 1320 is formed on the surface 1310. It is assumed that the light beam (not shown) is often It is from the top This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ------- Θ-C clothing-I (Please read the precautions on the back before filling this page)-Order ·

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L觀察到的)入射時,為了使光束能處理表面1304上一 為,積’就需要移動基質(例如:沿X-Y平面掃描)。如 圖所示’鍍層1314覆蓋面小於表面1304的整個面積,但比 無功,的面積大。明顯的,基質需要予以轉動以便處理與 電子光束1312呈平行的側表面1:3〇6及131〇,以及整個被阻 ,表電子光束外的背向表面13〇8。利用轉動上述表面使之 就位,便可如同處理表面13〇4—般輕易地處理上述這些表 面。如圖中所顯示,每一層鍍層(及區段)可能比另一層鍍 層在厚度和寬度(涵蓋面積)上不同。同時,每一鍍層(及 區段)可能比其他鍍層在其組成分上不同,端視鍍層在形 成期間所選擇導入反應系統中的副元素而定。又視對基質 特定表面進行處理的期間所援用的過程參數,也可能使基 質表面下層的主造材區和副造材區(為圖示清楚起見,圖 中未示)由一表面至另一表面不相同。 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁)(Observed by L) when incident, in order for the light beam to be able to process the surface 1304, it is necessary to move the substrate (for example: scanning along the X-Y plane). As shown in the figure, the coverage of the plating layer 1314 is smaller than the entire area of the surface 1304, but larger than the area of reactive power. Obviously, the substrate needs to be rotated in order to deal with the side surfaces 1: 306 and 1310 parallel to the electron beam 1312, as well as the entire blocked, outward-facing surface 1308 of the surface electron beam. By turning these surfaces into position, they can be treated as easily as the surface 1304-. As shown in the figure, each layer (and section) may be different in thickness and width (covered area) than the other layer. At the same time, each coating (and section) may be different in composition from other coatings, depending on the secondary elements that are selected to be introduced into the reaction system during the formation of the coating. Depending on the process parameters used during the treatment of the specific surface of the substrate, the main material area and the secondary material area (not shown in the figure) for the lower layer of the substrate surface may also be changed from one surface to another One surface is different. Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (Please read the precautions on the back before filling this page)

、1T 圖13B說明本發明的一項特徵,顯示在基質1322表面 上可製成具不同厚度區的一鏡層及/或各具有不同面積覆 蓋大小不同的鍍層。(為圖示清晰起見,主造材區和副造 材區從圖中省略)。本實施例中,表面1326上製有第一鍍 層I324。又在第一鍍層;L324的頂面U28上製有第二鍍層133〇 ,此第二鍍層i33。比第一鍍層U24的面寬(覆蓋面積)較小 。此二鍍層I324和133〇在成份上可為相同或不相同,且其 厚度也可為相同或不相同。 根據本發明的一項特徵,啟動反應系統的能量(例如 :來自三個雷射的)可投射在基質的選擇區上,並可在基 -73 - 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公釐) 經濟部中央標準局W;工消費合作社印製 A7 B7 五、發明説明(73 ) 質表面上以任何圖形加以掃描,而在基質上製成任何所望 的輪廓(例如:組成分、厚度、形狀)或圖形的鍍層。 “圖13^顯示一基質USO,該基質含有在其表面上製成 的特製”鍍層。(為圖示清晰起見,省略主造材區及副 造材區)多個皱廣部分2338係呈平面。其他部分134〇,1342 、’ 1344的寬度(覆蓋區)有限且均製成厚度比該平面部分1338 為厚,這樣,這些較厚部分往(高於)該部分1338上方延伸 。另外,此部分1340,1342 , 1344可形成具有斜坡(134〇) ,或是具有平頂面(134〇,i344),或具有陡昇侧壁(134〇, 1344),或成圓形(1342 , 1344),或具有一凸起頂面(1342) 或具有一凹下頂面(744)等各形。圖I%中所示鍍層的每一 部分’可使之形成為各具不同的組成分(例如:對於鍍層 的每一部分利用不同的副來源之方式)。 本文中,僅說明少數幾種利用本發明之技術方法可製 成的複合鏡層形狀,舉例言:可在一平板切削工具插入物 上製成斷屑刃的幾何形狀以作為鍍層的一整體部份。這樣 做的必然結果是,本發明的鍍層技術可運用在具有不規則 外形(拓撲)(如:一可能的情形(例如)利用基質本身結合 有斷屑刃特徵的切削工具插入物基質)的基質表面上製成 厚度均勻的鍍層。 圖1北說明於一基質表面上可製成附加的“各式各樣” 的形狀作為鍍層結構,包括:圓柱形1352,管狀結構1354 ,錐形結構1356,L形結構1358,彎形構造1360,及塔式 結構1362。塔式結構I362就證明本發明一項非凡的特徵, 皮通财國國家標準(CNS ) A4規格(2似297公釐) --------— (請先閱讀背面之注意事項再填寫本頁) -訂1T FIG. 13B illustrates a feature of the present invention, showing that a mirror layer having regions of different thicknesses and / or plating layers each having a different area and a different size can be formed on the surface of the substrate 1322. (For clarity of illustration, the main material area and auxiliary material area are omitted from the figure). In this embodiment, a first plating layer I324 is formed on the surface 1326. A second plating layer 133 is formed on the top surface U28 of the first plating layer L324, and this second plating layer i33. It is smaller than the surface width (covered area) of the first plating layer U24. The two plating layers I324 and 133 may be the same or different in composition, and their thicknesses may also be the same or different. According to a feature of the present invention, the energy to start the reaction system (for example: from three lasers) can be projected on a selected area of the substrate, and can be based on the Chinese paper standard (CNS) A4- Specifications (210 × 297 mm) Central Bureau of Standards, Ministry of Economics W; A7 B7 printed by Industrial and Consumer Cooperatives V. Description of Invention (73) Scanning on the surface with any graphics and making any desired contour on the substrate (for example: composition Layer, thickness, shape) or graphics. "Figure 13 (a) shows a substrate USO which contains a special" coating made on its surface. (For the sake of clarity of illustration, the main material area and the auxiliary material area are omitted.) A plurality of corrugated portions 2338 are flat. The other parts 1340, 1342, and 1344 have a limited width (coverage area) and are made thicker than the planar part 1338, so that these thicker parts extend (above) the part 1338 above. In addition, this part 1340, 1342, 1344 can be formed with a slope (134〇), or have a flat top surface (134〇, i344), or have a steeply rising side wall (134〇, 1344), or be round (1342) , 1344), or have a convex top surface (1342) or have a concave top surface (744). Each part of the coating shown in Figure I% 'can be formed into a different composition (for example, a different secondary source is used for each part of the coating). In this article, only a few of the composite mirror layer shapes that can be made using the technical method of the present invention are described. For example: the geometry of the chip breaking edge can be made on a flat cutting tool insert as an integral part of the coating. Serving. The inevitable result of this is that the coating technology of the present invention can be applied to substrates having an irregular shape (topology) (eg, a possible situation (for example, using a cutting tool insert substrate with a chip breaking edge feature in the substrate itself) The surface is made with a uniform thickness. Figure 1 illustrates that additional "various" shapes can be made on the surface of a substrate as a plating structure, including: cylindrical 1352, tubular structure 1354, tapered structure 1356, L-shaped structure 1358, and curved structure 1360. , And the tower structure 1362. The tower structure I362 proves an extraordinary feature of the present invention. National Standard (CNS) A4 (2 like 297 mm) of Piton Financial Country ---------- (Please read the precautions on the back before (Fill in this page)-order

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五、發明説明(74) — 經濟部中央標準局員工消費合作社印製 即,塔式結構的真正異質外延(全向)特性。為要形成這種 鍍層結構,首先製成構造的基部13623自基質表面延伸出 去,隨後,將基質(或能量來源/副來源)重新定向,並使 結構繼續以另-(如爾所示呈正交)方向成長以形成分段 l362b。本發明另一顯著特徵在於本圖中所示全部的構造 可在同一基質的同一表面上製成,且每一構造可含有與其 他構造不同的組成。以類比方式,可將基質視為一均衡&amp; 面,在此頂面上可設置任何數目的有用物體(當然,這些 物體需要利用本發明的技術方法以漫射接合方式與均衡頂 面結合)。舉例言,對一平板切削工具插入物不單是可予 以鍍覆含有一金剛石鏡層,且如此,金剛石鍍層是經特製 而具有其本身的斷屑刃的幾何形狀(結構)者。 圖WE說明本發明另一顯著且有效的特徵。在這種情 沉下,基質1368(比對圖工扣的^⑼〉表面上形成一蛇形鍍 層I366,在此需要在蛇形的不同分段中形成不同的鏡層組 成分,舉例言,第一分段可製成有第一組成分,第 一分段l366b可製成有第二組成分,第三分段可製成 有第三組成分,及第四分段可製成有第四組成分。 剩下的分段l366e以後可製成重覆這個順序(第一、第二 、第二、第四組成分)。另一選擇的方式是,各分段可代 表一個代碼,類似將資訊(二元,三元,四元等等)儲存於 蛇形中。這些技術係與例如形成金剛石(例如)染色體的方 式類似。各分段的可識別距離(大小)僅受被採用來形成分 段的雷射波長所限制。且橫向大小同於3〇8 nm的各分段即 -75 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閎讀背面之注意事項再填寫本頁) I - , 、 ---------------衣------、βτ----- • ^^1 In m In HI · A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明(75 ) 可輕易地形成者。一種為碳化鈦,釩和氮化鉻的“坨形,, 可輕易地形成。個別的分段可為磁性或非磁性的,半導雜 或非導體的。 體 圖US'說明如何在一基質:l37〇表面上整齊排列地形成 許多個(圖示9個)鏡層區段(i372^.. ),排列的每一 個區段可形成為不同組成分,而每一個區段可形成為不同 的厚度。圖中顯示區段137213具有比其他各區段(772a, l372c…l372i )的厚度更厚。又,各區段中任一區段或全 部也可製成為一多層結構(比對圖2B)。 圖1从至10F說明了利用本發明技術方法來製成“設計 師”鍍層及組成分的本發明的技術方法的能力。 圖13G和1沾說明處理圓柱形物體的技術方法,以作為 本發明能鍍覆非平面形表面的能力的示範例。鍍覆罐子, 孔器將會是本技法的有效應用。 在圖1:3G中,顯示在圓柱形基質Μ8?上製成有圓筒形 鍍層138〇。圓柱形基質可以是任意長度,這一點說明了本 發明技術方法的可連續特性,例如:圓柱形基質可以是一 長度甚長(上千英尺}的金屬線(例如•·銅)。利用金屬線通 過一工作站而可沿金屬線的長度連續進行鍍覆反應作業。 在圖1;3H中,顯示如何沿一圓柱形基質,例如:金屬 線於不同的縱長向位置上施覆帶狀鍍層1:384a*i384b。上 述帶狀鍍層可錢分段,且可為磁性或非磁性的或具有其 他特性,用以使一分段與另一分段(比較圖13E的蛇形1366) 有別。 -------ok------、玎 (請先閱讀背面之注意事項再填寫本頁)V. Description of the invention (74)-Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs, that is, the true heterogeneous extension (omnidirectional) characteristic of the tower structure. In order to form this coating structure, the base 13623 of the structure is first made to extend from the surface of the substrate, and then the substrate (or energy source / secondary source) is reoriented, and the structure continues to be another-(shown as positive Cross) direction to form the segment l362b. Another significant feature of the present invention is that all the structures shown in this figure can be made on the same surface of the same substrate, and each structure can contain a composition different from other structures. By analogy, the substrate can be regarded as an equilibrium &amp; surface, and any number of useful objects can be placed on this top surface (of course, these objects need to be combined with the equilibrium top surface in a diffuse bonding manner using the technical method of the present invention) . For example, a flat cutting tool insert may not only be plated with a diamond mirror layer, and as such, the diamond plated layer has a geometry (structure) that is tailored to have its own chipbreaking edge. Figure WE illustrates another significant and effective feature of the invention. In this situation, a serpentine plating layer I366 is formed on the surface of the substrate 1368 (^ ⑼), which needs to form different mirror layer components in different sections of the serpentine. For example, The first segment can be made with a first component, the first segment 1366b can be made with a second component, the third segment can be made with a third component, and the fourth segment can be made with a first component Four components. The remaining sections l366e can be made to repeat this sequence (first, second, second, and fourth components). Another option is that each section can represent a code, similar to Store information (binary, ternary, quaternary, etc.) in a snake shape. These techniques are similar to, for example, the formation of diamond (for example) chromosomes. The recognizable distance (size) of each segment is only used The laser wavelength that forms the segment is limited. And the lateral size is the same as each segment of 308 nm, ie -75-This paper size applies to China National Standard (CNS) A4 (210X297 mm) (Please read the back first Please note this page before filling in this page) I-,, ------------ βτ ---- -• ^^ 1 In m In HI · A7 B7 Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. 5. Description of the invention (75) can be easily formed. Can be easily formed. Individual segments can be magnetic or non-magnetic, semi-conductive or non-conductive. The volume diagram US 'illustrates how to form a large number of neatly arranged on the surface of a substrate: 137 (Figure 9 ) Mirror layer section (i372 ^ ..), each section of the arrangement can be formed into a different composition, and each section can be formed into a different thickness. The section 137213 shown in the figure has a higher ratio than the other sections. (772a, l372c ... l372i) are thicker. Also, any or all of the sections can be made into a multi-layer structure (compare with Figure 2B). Figures 1 to 10F illustrate the use of the technology of the present invention Method to make "designer" coatings and components of the technical method of the present invention. Figures 13G and 1 illustrate the technical method of processing cylindrical objects as an example of the ability of the present invention to plate non-planar surfaces. For example, plated jars, perforators will be the Application. In Figure 1: 3G, it is shown that a cylindrical coating 138 is made on a cylindrical substrate M8 ?. The cylindrical substrate can be of any length, which illustrates the continuous characteristics of the technical method of the present invention, for example: The cylindrical substrate can be a very long (thousands of feet) metal wire (such as copper). The metal wire can be used to continuously perform the plating reaction operation along the length of the metal wire through a work station. In Figure 1; 3H , Showing how to apply strip coating 1: 384a * i384b along a cylindrical substrate, such as: metal wires at different length and length positions. The above strip coatings can be segmented and can be magnetic or non-magnetic or It has other characteristics to distinguish one segment from another (compare the snake 1366 of FIG. 13E). ------- ok ------, 玎 (Please read the notes on the back before filling out this page)

經濟部中央標準局員工消費合作社印製 【快速模型製作(圖131)} 圖131大概說明本發明真正異質外延(磊晶)的特性。 於一基質139〇表面的一個或多個(圖示j個)選擇區上開始 製成鍍層。可以看得出,該基質可以是一 “犧牲,,基質而 可自最後築成(製成)的鍍覆結構體上切除。 圖中所示一代表性鍍覆結構U92係由基質丄39。表面的 選擇£製成(建造),這一點可認為是由z_轴(對基質表 面垂直)成長。 舉例說明,於基質表面上方沿z_轴上造成鍍覆結構η” 的一上升部分UMa到達一高度《tl,,之後,就從此點可 使基質(或處理源材)重新定向(例如:配合能量源及副源 材),這樣,鏡覆結構I392的另一部分UMa便可以不同 的方向(例如:如圖所示,與基質呈平行並保持—間隔)進 步成長(製成)。此部分I392]□的成長可當作為沿χ_轴方 向的成長。結構這一部分。92!^的製成作業可進行到—任 何預定程度。 同理,可重新取向基質(或處理源材),這樣,結構a% 的成長可以從上述部分;^92^任一點向不同的方向繼續進 行下去。這一點可由在此可當作為沿γ_轴上的成長而製成 的結構之一個部分1392c加以圖示。 明顯地,這種組構式結構]_392的形狀(輪廓及面積)其 於基質表面與高度(程度)t2之間者,與於高度U與^之^ 者有所差異。 ' « 以非常概括地而言,這一點證明了本發明真正異質外 -77 - 本紙張尺度適用中國國家標隼(CNS ) A4規格(2ΐ〇χ297公釐) (請先閱讀背面之注意事項再填寫本.頁}Printed by the Consumers' Cooperative of the Central Bureau of Standards, Ministry of Economic Affairs [Quick Model Making (Figure 131)} Figure 131 roughly illustrates the characteristics of the true heteroepitaxial (epitaxial) of the present invention. The plating is started on one or more (j) selected areas on the surface of a substrate 139. It can be seen that the substrate can be a "sacrifice," and the substrate can be cut from the last plated structure (made). A representative plated structure U92 shown in the figure is the substrate 丄 39. The choice of surface is made (built). This can be considered as growing from the z-axis (vertical to the substrate surface). For example, a rising portion UMa of the plated structure η "above the substrate surface along the z_ axis is created Reaching a height "tl," From then on, the substrate (or processing source material) can be reoriented (for example, with energy source and auxiliary source material), so that the other part of the mirror-covered structure I392 UMa can be oriented differently (Example: as shown in the figure, parallel to the matrix and maintained-spaced) Progressive growth (made). The growth of I392] □ in this part can be regarded as the growth along the χ_ axis. This part of the structure. The production of 92! ^ Can proceed to any predetermined degree. In the same way, you can reorient the matrix (or process the source material), so that the growth of the structure a% can continue from any of the above points; ^ 92 ^ any point to continue in different directions. This can be illustrated by a portion 1392c which can be considered here as a structure made along the γ-axis. Obviously, the shape (contour and area) of this structural structure] _392 differs between the surface of the substrate and the height (degree) t2, and the difference between the height U and ^^. '«In a very broad sense, this proves that the present invention is truly heterogeneous -77-This paper size applies to the Chinese National Standard (CNS) A4 specification (2ΐ〇χ297 mm) (Please read the precautions on the back before Fill out this. Page}

經濟部中央標準局員工消費合作社印製 A7 --B7 _ 五、發明説明(77 ) ' ' ^ ~—— 延(全向)特性,也就是說,可選擇任何方向(例如: X,Y及Z軸中任一軸)來完成鍍層(和鍍覆結構,以及結 ,部分〉的作業。此圖示是用來證明可製成—在任何&amp;定 高度(例如:在基質表面上方)具有不同輪廓的鍍覆結構者, 此在任何一所定咼度的輪廓並不受到前面的高度之輪廓的 拘束。另外,在任何所定高度的結構的面積範圍並不受到 前一高度的面積範圍(例如:“足跡,,)的拘束。在基質表 面上方任何给定的水平面(高度)上,可製成任何輪靡或面 積的鍍層結構,且只需要藉例如:從欲要製成為—成長結 構的物體的電腦產生的圖像中取得適當的橫斷面,就可適 當地達成對製成作業的控制。利用這種方式,即可在一基 質上製成一具有不受約束的形狀或輪廓的三維結構。製成 三維結構之後,可將基質切斷並丟棄,或溶解掉,或利用 任何包括機械或化學方法的手段除去。 本發明的方法可結合由電腦數值控制(CNC)系統所控 制的裝置,此電腦數值控制系統係接受立體石印軟體擋( 例如· stL)以利製造含複雜配件的物件。利用本發明中所 主張的方法,上述物件可從經一種方式處理操作以便製成 (例如:模型製作)產品的單純、扁平的,或圓柱形基質來 製成。 因此,根據本發明的裝置及方法,可用來從CAD數據 中製造複合材料的複數個原型零件成為已加工完成的工件 規格。不僅如此,不需要任何後處理加工便可將金屬、陶 器及複合零件製成為最終工件狀態,並表現出由先進的材 — 78 — 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ 297公釐) (請先鬩讀背面之注意事項再填寫本頁} --------------------ΐτ-----^ A7 B7 五、發明説明(78 ) 料組成而帶來的強化物理特性,按這種特性是由以往的方 法所不能製造的。 [管狀基質(圖14A和14B)】 本發明的技術方法可應用於被覆管狀基質的内徑(ID) ,特別是適用以鏡覆長度(L)對直徑(D)比很大(大於3:1) 的管子的内徑。 圖14A說明一種鍍覆管狀基質1402的内徑的技術方法 。能量光束14〇4(例如:來自三個雷射)係射入管狀基質1402 的一個(開口)端14〇6。管狀基質的另一端1408則最好是由 凹面(或可以是凸面,未圖示)拋物線反射面1410(為圖示 單純起見’此面自端部1408相隔一距離)封閉。利用這種 方式,電子光束14〇4會在管狀基.質的内部周圍反射並處理 管狀基質的全部内徑。必要時系統中可引進或不引進副元 素0 圖14B說明另一種鍍覆管狀基質1412 ID的技術法。 一能量射束:U14(比對圖3之304)係射入管狀基質1402的一 個(開口)端:U16。管狀基質的另一端1418也可維持開口狀 。同時可如射流142〇 (例如:氣態副元素流)所顯示一般, 將副元素導入。 經濟部中央標準局員工消費合作社印製 --------©&lt;』------、玎 (請先聞讀背面之注意事項再填寫本頁) 對於具有特別深(例如:高L/D比)的管狀基質而言, 可於管狀基質的ID之中設置一簡單(例如:平面)反射鏡以 便將入射能量束引向管狀基質10上的選擇區。照這樣,ID 的選擇區(轴向,周向,螺旋形)可由電子光束來進行處理 作業。另外,以與圖13E,13F和13H相同的方式,可利用 -79 - 本紙張尺度適财國國家標準(CNS ) A4· ( 21GX297公釐) 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(79 ) 引入副來源依排定順序從一選擇區到另一選擇區而改變處 理作業。 本發明適用於鍍覆許多種基質中之任一種,其中數種 基質已在上文中討論過。例如:本發明可對螺旋迴旋波型 管的内徑或外徑進行處理作業及/或鍍覆作業,以及製成 供迴旋波型管用的窗口。又,對電阻加熱元件也可進行處 理作業及/或鍍覆作業,例如:促成熱量的均勻分布,以 及對烹飪器皿的内面及/或外面進行處理作業及/或鍍覆 作業。在可替換式關節桿接點及類似物上也可製成鍍層, 如此,對接受鍍覆作業中物件的一部分可提供一低磨檫鍍 層(有必要時,具有增強高载荷能力),而對物件的另一部 分則可提供一多孔性或有故理的鍍層(例如:以促進與骨 狀表面結合)。藉本發明的技術方法尚可對槍管、汽缸襯 墊及類似物有利地進行處理作業。利用本發明的技術方法 可輕易地來處理剃刀、刀具及解剖刀的刀刃或刃口。切削 工具如:鑽頭之類,可藉由製成階梯式凹槽,在刀具侧面 上製成金剛石鍍層,以及在刀具中製成斷屑刃幾何形狀而 加以改善,而上述這些如採用研磨裝置是非常難以達成。 舉例來說,金剛石可用鐵來溶化,在這種情形下,也許在 刀具(或其他基質)上形成一氮化矽鍍層較佳。本發明利用 來自基質的任何一種組成(主要)元素及包括矽、銅、氧、 氮、硼及類似物在内的副元素而能夠萃取並形成一種複合 材料。運用在乾切削加工方面,本發明技術方法的用途幾 乎是無限制的。 一 8 0 — 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先鬩讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(8〇 ) 【鍍覆磨損面(圖15A和ΙδΒ】 圖15Α顯示,一鋼珠軸承的組件1552,其轴承座環表 面上經處理而覆蓋有一剛硬(例如:金剛石或DLC )艘層15 54 。這樣,可使鋼珠軸承如同按照本發明方法處理機械工具 而有助於乾切削加工一般,不需(或只需少許)潤滑就可作 用0 圖15Β顯示,一鋼珠轴承的組件1562,該組件1562整 個表面上經處理而覆蓋有一剛硬(例如:金剛石或DLC:)鍍 層1566。這樣,該鍍層156 6將作用如同散熱座以將鋼珠和 軸承座環上熱量排除,並可防止腐触。 [鍍覆圓形刀具(圖ΙδΑ至lSD)】 圖16A說明鍍覆圓形刀具(例如:端銑刀、鑽頭、或類 似物)的一實施例1600。如圖所示,一端銳刀1602具有一 軸部1604,一刀槽部1606及一刀尖1608,經調定為其尖端 向上面對雷射和噴嘴(未示)。照以上所述之方式,在刀尖 周圍產生電漿1610,此電漿1610會沿著端铁刀的刀槽部“ 迴旋”往下流動,而造成沿刀槽部1606全長形成的鍍層。 很顯然地,通常本實施例較適於沿刀槽部全長形成一薄膜 金剛石(或DLC)鍍層。按照本實施例,可採用一類似前面 所述真空吸盤( 804)的真空夾具來保持端銑刀並協助電漿 在刀槽部盤繞。 圖16B顯示在圓形刀具上製成鍍層技術方法的另外一 實施例。本實施例中,一典型的端銑刀1622 (類似端銑刀 1602)係設在其侧面噴嘴和雷射(未示)來自上方,並在端 一 81 — 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) --------— (請先闊讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(81 ) 铁刀尖端上形成電漿1630,此電漿如同前面所描述過一般 方式’沿刀槽部全長盤流(配合在一較大的基質上造成選 擇區的相對運動)。本實施例中,端銑刀應配合電漿沿刀 槽部盤旋而旋轉,以確保沿刀槽部全長獲得均句的被覆( 鍍層的形成)。 圖16C和16D分別表示端铣刀1642(類似1602或1622)沿 刀槽部全長經沈積(鍍覆)一層薄膜之後(同圖16A或KB — 樣方式)被進一步處理的側視圖和端視圖。在此例中,是 想要在刀槽中鄰近切削刃緣處形成一厚膜鍍層,這樣,厚 膜有助於切削作業,而薄膜則有助於排屑作業及減輕切削 力。由箭頭I644代表的雷射和一種或多種副來源係照射在 緊鄭切削刃的一選定區(小班點)1646上。當厚膜鍍層正在 形成之際,該“班點’’(被處理中的選定區)係藉其配合端 铁刀轉動而移動以使班點(例如:從圖示觀察的由左至右 方向)沿著螺旋形(螺線)切削刃向前推進。如圖16D中所 示,由以上作業而產生一具有“鋪氈,,薄膜金剛石(或DLC) 鍍居的端铁刀,以及沿著端銑刀的切削刃上的金剛石(或 DLC)厚膜“包邊”。 圖1SE顯示在圓形刀具上製成鍍層技術方法的另一實 施例166〇。本實施例中,一示範性端銑刀1662(類似端銑 刀16〇2)係在其端部上設置有照射自上方的噴嘴和雷射(未 示)。這樣,此刀具:L662沿刀槽部全長形成有電漿1664, 而不需要沿刀具全長游動即可達成鍍層的形成。 圖16F顯示在圓形刀具上製成鍍層技術方法的另一實 -82 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公慶) (請先閲讀背面之注意事項再填寫本頁) 裝- 訂 A7 B7 五、發明説明() 8 2 施例1680。本實她例中,一例示性端铁刀1682(類似端铁 刀16〇2)係在其側面上設置有來自上方的噴嘴和雷射(未示) 。這樣,此刀具1662沿刀槽部全長形成有電漿1864,而不 需要沿刀具全長游動即可達成鍍層的製成。最好刀具在進 行鍍覆作業時旋轉,以確保鍍層覆蓋過程中鍍層均一性。 【優點】 本發明技術方法,對製成可用於任何用途的種種鍍層 上非常有利,舉例來說,形成防蝕及防腐鍍層,以及對於 在不安全的工作環境(例如:蒸汽鍋爐及類似物)時呈惰性 的鍍層。本發明的一項優點是,不需要加熱整個基質就可 對基質的整個表面進行處理作業。先前技術的方法涉及基 質以“總體”加熱,這樣會導致,例如,皮下層鋼質基質 在施覆(例如:藉由CVD方法,或其他類似方法)金剛石鍍 層時失去硬度(硬性)。而採用本發明技術方法可在大表面 積上製成耐熱鍍層,這是因為本發明技術方法可以連續作 業方式於周圍環境下執行。本發明優點一般包括: (a) 取得較高澱積速率,例如:每小時1或1個以上 亳米之譜。 (b) 提供切削工具較大的粘附力(例如:5〇kg/mm2 ) 〇 經濟部中央標準局員工消費合作社印製 --------裝-- (請先閱讀背面之注意事項再填寫本頁) (c) 可製成晶體鍍層,例如•·具有晶格結構,以及具 有SP2_或Sp3_鍵合礙結構和如有需要,具有可控制的混合 物。 . σ (d〕不需預先加熱或冷卻時間。 (e)本方法不需要真空環境,因此,基質的大小理論 -83 -Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs A7 --B7 _ V. Description of the invention (77) '' ^ ~ —— Extended (omnidirectional) characteristics, that is, any direction can be selected (for example: X, Y and Z axis) to complete the plating (and the plating structure, and the junction, part>). This illustration is used to demonstrate that it can be made-at any &amp; fixed height (for example: above the surface of the substrate) different For those who have a profiled plating structure, the profile at any given height is not restricted by the profile of the previous height. In addition, the area range of the structure at any given height is not subject to the area range of the previous height (for example: The constraint of "footprint ,,". On any given horizontal plane (height) above the surface of the substrate, any popular or area plating structure can be made, and only needs to be borrowed from, for example, an object to be made into a growing structure The appropriate cross-section can be obtained from the computer-generated image of the computer, and the control of the production operation can be properly achieved. In this way, an unconstrained shape or contour can be made on a substrate Three-dimensional structure. After making the three-dimensional structure, the matrix can be cut and discarded, or dissolved, or removed by any means including mechanical or chemical methods. The method of the present invention can be combined with a computer numerical control (CNC) system controlled Device, this computer numerical control system accepts three-dimensional lithographic software (such as stL) to facilitate the manufacture of objects containing complex parts. Using the method claimed in the present invention, the above-mentioned objects can be processed and processed in one way to make (for example, : Model making) The product is made of a simple, flat, or cylindrical substrate. Therefore, the device and method according to the present invention can be used to manufacture a plurality of prototype parts of composite materials from CAD data to become finished workpiece specifications. Not only that, metal, ceramics, and composite parts can be made into the final workpiece state without any post-processing, and show advanced materials — 78 — This paper size applies to Chinese National Standard (CNS) Α4 specifications (210 × 297) (Mm) (Please read the notes on the back before filling out this page} -------------------- ΐτ ----- ^ A 7 B7 V. Description of the invention (78) The enhanced physical properties brought about by the composition of the material can not be manufactured by the conventional methods. [Tubular substrate (Figures 14A and 14B)] The technical method of the present invention can be applied For coating the inner diameter (ID) of a tubular substrate, especially for the inner diameter of a tube with a large ratio of mirror coating length (L) to diameter (D) (greater than 3: 1). Figure 14A illustrates a coated tubular substrate 1402 The technical method of the inner diameter. The energy beam 1404 (for example: from three lasers) is incident on one (open) end 1406 of the tubular substrate 1402. The other end 1408 of the tubular substrate is preferably formed by a concave surface ( Or it may be a convex surface (not shown). The parabolic reflection surface 1410 (for the sake of simplicity in the illustration, this surface is separated from the end portion 1408 by a distance) is closed. In this way, the electron beam 1404 reflects around the interior of the tubular substrate and processes the entire inner diameter of the tubular substrate. With or without the introduction of auxiliary elements in the system when necessary. Fig. 14B illustrates another technique for plating a tubular substrate 1412 ID. An energy beam: U14 (compared to 304 in Fig. 3) is incident on one (open) end of the tubular substrate 1402: U16. The other end 1418 of the tubular matrix can also remain open. At the same time, the secondary element can be introduced as shown by the jet 142 (for example, the gaseous secondary element flow). Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs -------- © &lt; 』------, 玎 (please read the precautions on the back before filling out this page) : High L / D ratio) for a tubular substrate, a simple (eg, flat) reflector can be set in the ID of the tubular substrate to direct the incident energy beam to a selected area on the tubular substrate 10. In this way, the ID selection area (axial, circumferential, spiral) can be processed by the electron beam. In addition, in the same way as in Figures 13E, 13F, and 13H, -79-This paper is a national standard (CNS) A4 · (21GX297 mm) suitable for fiscal countries. Printed by A7 B7 of the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. 2. Description of the invention (79) Introduce the secondary source to change the processing operation from one selection area to another selection area in a scheduled order. The invention is applicable to plating any of a number of substrates, several of which have been discussed above. For example, the present invention can perform a processing operation and / or a plating operation on an inner diameter or an outer diameter of a spiral cyclotron tube, and make a window for a cyclotron tube. In addition, the resistance heating element may be processed and / or plated, for example, to promote uniform distribution of heat, and to perform processing and / or plating on the inner and / or outer surfaces of the cooking utensil. The coating can also be made on the replaceable joint joints and the like. In this way, a part of the object under plating can be provided with a low-friction coating (if necessary, with enhanced high load capacity), and Another part of the object can be provided with a porous or rational coating (for example, to promote bonding to bone-like surfaces). According to the technical method of the present invention, the barrel, cylinder liner and the like can be advantageously processed. With the technical method of the present invention, the edges or edges of razors, knives and scalpels can be easily processed. Cutting tools, such as drills, can be improved by making stepped grooves, diamond coatings on the sides of the tool, and chipbreaker geometries in the tool. Very difficult to achieve. For example, diamond can be dissolved with iron. In this case, it may be better to form a silicon nitride coating on the tool (or other substrate). The present invention is capable of extracting and forming a composite material using any constituent (major) element from the matrix and auxiliary elements including silicon, copper, oxygen, nitrogen, boron, and the like. The application of the technical method of the present invention in the field of dry cutting is almost unlimited. 1 80 — This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297 mm) (Please read the notes on the back before filling out this page) Order printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 5. Description of the invention (80) [Plating wear surface (Figures 15A and ΙδB) Figure 15A shows that a component of a steel ball bearing 1552 is treated on the surface of the bearing ring and covered with a rigid (for example: diamond or DLC) ship layer 15 54. In this way, the steel ball bearing can be used to facilitate dry cutting as if the machine tool is treated in accordance with the method of the present invention, and it can be used without (or only a little) lubrication. Figure 15B shows that a steel ball bearing assembly 1562, The entire surface of the component 1562 is treated and covered with a rigid (eg, diamond or DLC :) plating layer 1566. In this way, the plating layer 156 will function as a heat sink to remove heat from the steel balls and the bearing ring, and prevent corrosion [Plating circular cutters (Figures IδA to 1SD)] FIG. 16A illustrates an embodiment 1600 of a plated circular cutter (eg, an end mill, drill, or the like). As shown, one end The knife 1602 has a shaft portion 1604, a sipe portion 1606, and a knife point 1608, which are adjusted so that their tips face upwards toward a laser and a nozzle (not shown). In the manner described above, a plasma 1610 is generated around the knife point, The plasma 1610 will "swivel" down the sipe portion of the end iron blade, resulting in a plating layer formed along the entire length of the sipe portion 1606. Obviously, this embodiment is generally more suitable for forming along the entire length of the sipe portion. A thin-film diamond (or DLC) coating. According to this embodiment, a vacuum clamp similar to the vacuum chuck (804) described above can be used to hold the end mill and assist the plasma coiling in the sipe. Figure 16B shows a circular shape Another embodiment of the plating method on the tool. In this embodiment, a typical end mill 1622 (similar to the end mill 1602) is provided with a side nozzle and a laser (not shown) coming from above, and Duan 81 — This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) --------— (please read the precautions on the back before filling this page) Order the Central Bureau of Standards of the Ministry of Economic Affairs Printed by employees' consumer cooperatives A7 B7 V. Invention Ming (81) A plasma 1630 is formed on the tip of the iron knife, and the plasma is' coiled along the full length of the sipe as described previously (fitting on a large substrate causes relative movement of the selection area). This implementation In the example, the end mill should rotate with the plasma to rotate along the sipe to ensure uniform coverage (the formation of plating) along the entire length of the sipe. Figures 16C and 16D show the end mill 1642 (similar to 1602 or 1622) A side view and an end view of a thin film deposited (plated) along the entire length of the sipe (in the same manner as FIG. 16A or KB). In this example, we want to form a thick film coating in the sipe near the cutting edge. In this way, the thick film helps the cutting operation, while the thin film helps the chip removal operation and reduce the cutting force. The laser represented by arrow I644 and one or more secondary sources are irradiated on a selected area (small shift point) 1646 of the cutting edge. When the thick film coating is being formed, the "shift point" (the selected area being processed) is moved by the rotation of the end iron knife to make the shift point (for example: the left-to-right direction viewed from the illustration) ) Advancing forward along the helical (spiral) cutting edge. As shown in FIG. 16D, the above operation results in an end iron blade with a "felt, thin film diamond (or DLC) plated settlement, and Diamond (or DLC) thick film "edge" on the cutting edge of an end mill. Fig. 1SE shows another embodiment 1660 of a method for forming a coating on a circular cutter. In this embodiment, an exemplary end mill 1662 (similar to the end mill 1602) is provided on its end with a nozzle and a laser (not shown) radiating from above. In this way, this cutter: L662 is formed with a plasma 1664 along the entire length of the sipe, and it is not necessary to swim along the entire length of the cutter to form a plating layer. Figure 16F shows another example of the technical method for making coatings on a circular cutter. -82-This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 public celebration) (Please read the precautions on the back before filling this page) Binding-order A7 B7 V. Description of the invention () 8 2 Example 1680. In this example, an exemplary end iron knife 1682 (similar to the end iron knife 1602) is provided with a nozzle and a laser (not shown) from above on its side. In this way, the cutter 1662 is formed with the plasma 1864 along the entire length of the sipe, and it is not necessary to swim along the entire length of the cutter to complete the plating. It is best to rotate the tool during the plating operation to ensure the uniformity of the coating during the coating process. [Advantages] The technical method of the present invention is very advantageous for making various coatings that can be used for any purpose, for example, forming anti-corrosion and anti-corrosion coatings, and for unsafe working environments (such as steam boilers and the like). Inert plating. An advantage of the present invention is that the entire surface of the substrate can be processed without heating the entire substrate. Prior art methods involve heating the substrate "overall", which can, for example, cause the subcutaneous steel matrix to lose hardness (hardness) when the diamond coating is applied (eg, by CVD, or other similar methods). However, the technical method of the present invention can be used to make a heat-resistant coating on a large surface area, because the technical method of the present invention can be performed in a continuous operation in the surrounding environment. The advantages of the present invention generally include: (a) Obtaining a higher deposition rate, for example: a spectrum of 1 or more indica per hour. (b) Provide a large adhesion of cutting tools (for example: 50kg / mm2) 〇 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs -------- install-(Please read the note on the back first (Please fill in this page for more details) (c) It can be made into a crystal coating, for example, it has a lattice structure and a SP2_ or Sp3_ bonding barrier structure and a controllable mixture if necessary. σ (d) does not require pre-heating or cooling time. (e) This method does not require a vacuum environment, so the theory of the size of the substrate -83-

經濟部中央標準局員工消費合作社印製 卜:在周圍(對真空)環境下更容易容納處 (幻可操縱各部件,可取得各種的層厚度以及不需掩 蔽作用即可將鍍層施覆於該部件的特定區上。 (g) 鍍層(例如:金剛石)在姑含量超過1〇%的基質上 會黏附得很好,因此,實質上排除了特製基質的必要。 (h) 利用本發明技術方法可輕易地對不銹鋼施覆鍍層 (i )利用本發明技術方法可輕易地對鋼施覆鍍層,因 此,排除了必須是不銹鋼(一開始)的要求。 (j) 本發明技術方法對包括那些具有較高的長度對直 徑比(L/D比)者在内的管子内徑(工d,口徑)鍍覆處理效果 良好。 (k) 鍍覆過程期間也可完成雕模和織故作業,因此, 免除了習用技術的後修整加工步驟。 (l) 本發明技術方法也可為異質外延(磊晶)型。 U)本發明技術方法對任何形狀的基質均可有效地在 所有侧面上均句地或選擇性地施以鍍覆。 (η)採用本發明的技術方法以從含有各種組成分的基 質取得所要的複合材料時,沒有任何顯明的拉曼方差。例 如根據拉曼光譜分析顯示,含各種組成分的基質對採用本 發明技術方法所製成的金剛石鍍層殆無任何影響。 (〇)對具有複雜的幾何形狀的基質可進行處理作業, 並可將各種摻雜劑(例如:硼)導入表面處理中。 (Ρ)基質可經前處理以賦予其表面特質化以便進一步 -84 - 本紙張尺度適用中國國家標準(CNS &gt; Α4规格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁) .0Γ 訂 、發明説明() ' 84 藉由任一適當的技術方法鍍覆鍍層。 本發明可適用於種種基質,包*括金屬以及非金屬基質 (非金屬基質包括陶瓷以及聚合物基質)中任一種之處理。 可加以處理,或導入反應系統中之特定材料包括’但並不 限於: •金屬(B,Al,Ti,Nb,Ta,Cr,Mo,W,Re,Hf 等); •石墨以及碳化物〇34(:,3丨(:,1^(:,(:]:3(:2,(:,碳化給 等); .氮化物 •,W&amp;,t*(B,TaB2,TiB2,WB,FeB,NiB,,); •矽以及矽化物(Si,以及Mo,Fe,Ni之不同矽化物,等); •氧化物(Al203,Si0,Si02);以及 ’ •有機化合物(PTFE,訊夫拉(Kevlar),聚酸胺,液晶 聚合物,聚四酞酸乙酯。 如上所述’本發明技術方法之一優點為無需後加工處 理即可獲得理想的基質質地。紫外線雷射本身(舉例言之) ’僅藉控制其產生能量及照射時間,可用以熔除(燒钱)基 質而實質上獲得自粗糙至光學上平滑不等之各種質地β此 外藉採用本發明之技術方法,無需為基質選擇晶種(為 鍍層之後績生成),並具有控制晶體排列方向之空前能力 。更且,前處理以及後加工二步称均可就地進行(作為全 部過程之部分程序)。 於澱積技法之先前技術中,需行後加工步驟以獲一較 澱積作用所得更光滑之質地,例如,可使用一金剛砂磨料 A7 B7 五、發明説明(^ ) 〇 〇 磨光基質經鍍覆之表面。然而,不管使用多細密的金剛砂 磨料;均會於經磨光之基質上留下擦刮的痕跡。隨後尚需 紫外線雷射、離子光束磨平或磨光處理過程。 於後加工處理步驟中避免使用金剛砂磨料或類似物, 所得之基質(加工所得產物)則不會顯示此種刮痕且係呈現 無方向性表面磨光。 雖於圖面及前文中已詳細述及本發明,應知此係為說 明本發明而非限制其特徵一吾人應了解於此僅就最佳實施 例加以圖示及說明,所有屬於本發明糈神内之變更與改良 均應受到保護。 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 圖17A係大概表示一噴嘴(噴管)1730適用於導送一受 控之副元素流(可為一惰性元素)進入反應系統,並將該副 副元素流導入正由能源處理照射之同一反應帶。該噴嘴1730 係具有一沿喷嘴體17 3 4抽向延伸之孔17 3 2。如此,則例如 ,經由孔17 32流出之副元素氣流可被導向反應帶。然而, 一旦氣流流出孔外即可能會開。為使氣流更緊密集中,以 及/或使氣流被圍繞於一保護環境中,可於噴嘴本體設置 附加孔1736(圖示為三對附加孔)以產生一額外氣體,例如 一惰性氣體,之螺旋氣流。熟習於本發明大致所述技術之 人士當會了解依流體動力學之知識可如何使噴嘴或類似裝 置適用以達到所欲之目的。 圖17B—17C表示依據本發明,一噴嘴傳送氣體(即, 作為副元素用)之一實施例。 圖17B所示,噴嘴1750係通常為圓筒狀,具有一頂開 —8 6 — 本紙張尺度適用中國國家標準(CNS ) A4规格(210X297公釐) 1 _ J · -'5? 一一 1. A7 \ - [ B7 五、發明説明(86 ) 經濟部中央標準局員工消費合作社印製 口 1752,一底開口 1754,以及一中央空腔1756係位於噴嘴 175〇之本體1·758之内。雷射能量(即,三道光束LI,L2, L3)可經噴嘴之頂開口 1752之導射,基質(圖未示)將置於 噴嘴之下。噴嘴1750具有二氣體入口 第一入口 1760用以 收容包括一含碳副元素(亦即,CO,co2,等)之氣體,以 及第二入口 1770用以收容惰性氣體(如上已述者)。 第一氣體入口 1760係與一環繞噴嘴1750本體1758外周 設置(亦即成環圈狀)之外管1212相通。含碳氣體被導入第 一氣體入口 176〇(於預定壓力下)並經由外管1762流至噴嘴 本體1758四周。數個内管1764大致呈輕射狀自外管1762延 伸進入噴嘴之空腔1756,以便將含碳氣體導入該嗜嘴空腔 内。内管I764宜往下向底開口 1754設置.,以便將含碳氣體 導向噴嘴1·750之底開口 1754,且隨後導向正進行金剛石或 DLC鍍層製造之基質。第二氣體入口 1770則與一環置於噴 嘴175〇本體1758周圍(亦即,成一環圈狀)之外管1772相通 。惰性氣體(於上已述及)被導入第二氣體入口 1770(於預 定壓力下)並經由外管1772流至嗜嘴本體1758四周。數個 内管1774大致呈輕射狀自外管1772延伸進入嗜嘴空腔1756 ,以便將含碳氣體引入噴嘴空腔。該等内管177 4可往下朝 底開口 1754設置,以便將惰性氣體導向噴嘴1750之底開口 ’並隨後導向正進行金剛石或DLC鍍層製造之基質。 一般言之,外管1762與1772係類似轉移模的澆道,而 內管1764與1114則係如同轉移模的澆口。 亦可如圖17C所示,内管1775(如同1774)係經噴嘴本 _ 8 7 _ 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁)Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs: It is easier to accommodate the place in the surrounding (for vacuum) environment (the parts can be manipulated, various layer thicknesses can be obtained, and the coating can be applied without masking. (G) Plating layer (eg diamond) adheres well to substrates with a content of more than 10%. Therefore, the need for special substrates is virtually eliminated. (H) Utilizing the technical method of the present invention Stainless steel can be easily plated (i) The steel can be easily plated using the technical method of the present invention, therefore, the requirement that it must be stainless steel (in the beginning) is excluded. (J) The technical method of the present invention includes those having Those with a higher length-to-diameter ratio (L / D ratio) have a good coating effect on the inner diameter (work diameter, caliber) of the pipe. (K) Carving dies and weaving operations can also be completed during the plating process, so (1) The post-trimming processing steps of the conventional technology are eliminated. (L) The technical method of the present invention can also be a heteroepitaxial (epitaxial) type. U) The technical method of the present invention can be effective on all sides of a substrate of any shape. Plating is selectively or selectively applied. (η) When the technical method of the present invention is used to obtain a desired composite material from a matrix containing various components, there is no significant Raman variance. For example, Raman spectroscopy analysis shows that the matrix containing various components does not have any effect on the diamond-coated hafnium produced by the method of the present invention. (〇) The substrate with complex geometry can be processed, and various dopants (such as boron) can be introduced into the surface treatment. (P) The substrate can be pre-treated to give its surface characteristics for further -84-This paper size applies the Chinese national standard (CNS &gt; A4 size (210X297 mm) (Please read the precautions on the back before filling this page) .0Γ Order, description of invention () '84 The plating layer is plated by any appropriate technical method. The present invention can be applied to various substrates, including metal and non-metal substrates (non-metal substrates include ceramics and polymer substrates). Any kind of processing. Specific materials that can be processed or introduced into the reaction system include, but are not limited to: • Metals (B, Al, Ti, Nb, Ta, Cr, Mo, W, Re, Hf, etc.); Graphite and carbides 034 (:, 3 丨 (:, 1 ^ (:, (:): 3 (: 2, (:, carbonization, etc.); nitrides, W &amp;, t * (B, TaB2 , TiB2, WB, FeB, NiB ,,); • Silicon and silicide (Si, and different silicides of Mo, Fe, Ni, etc.); • Oxides (Al203, Si0, Si02); and '• Organic compounds (PTFE, Kevlar, polyamide, liquid crystal polymer, polytetraphthalate. As described above One of the advantages of the Ming technical method is that it can obtain the ideal substrate texture without post-processing. The ultraviolet laser itself (for example) 'can only be used to melt (burn money) the substrate by controlling its energy generation and irradiation time. Various textures β ranging from rough to optically smooth are obtained in addition. By using the technical method of the present invention, it is not necessary to select seed crystals for the substrate (generated after plating), and it has unprecedented ability to control the direction of crystal arrangement. Moreover, The two steps of pre-processing and post-processing can be performed in situ (as part of the overall process). In the previous technology of the deposition technique, a post-processing step is required to obtain a smoother texture than that obtained by deposition, such as You can use an emery abrasive A7 B7 V. Description of the invention (^) 〇〇 Polished surface of the substrate. However, no matter how fine the emery abrasive is used, it will leave scratches on the polished substrate Traces. UV laser, ion beam leveling or polishing processes are still needed. Avoid using emery abrasives or similar in post-processing steps. The obtained substrate (processed product) does not show such scratches and shows non-directional surface polishing. Although the invention has been described in detail in the drawings and the foregoing, it should be understood that this is to illustrate the invention Rather than restricting its characteristics, one should understand that only the best embodiment is illustrated and explained here, all changes and improvements within the gods of the present invention should be protected. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs (please (Read the precautions on the back before filling this page) Figure 17A shows that a nozzle (nozzle) 1730 is suitable for directing a controlled secondary element stream (which can be an inert element) into the reaction system, and the secondary vice Elemental flow is directed into the same reaction zone that is being illuminated by energy processing. The nozzle 1730 has a hole 17 3 2 extending in the direction of the nozzle body 17 3 4. In this way, for example, the secondary elemental airflow flowing out through the holes 17 32 can be directed to the reaction zone. However, it may open once the air flows out of the hole. In order to concentrate the airflow more closely and / or surround the airflow in a protected environment, additional holes 1736 (three pairs of additional holes shown) can be provided in the nozzle body to generate an additional gas, such as an inert gas, spiral airflow. Those skilled in the art generally described in the present invention will understand how knowledge of fluid dynamics can make a nozzle or similar device suitable for the desired purpose. 17B-17C show an embodiment of a nozzle for conveying gas (ie, as a secondary element) according to the present invention. As shown in FIG. 17B, the nozzle 1750 is generally cylindrical and has a top opening—8 6 — This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 1 _ J · -'5? 1 1 1 A7 \-[B7 V. Description of the invention (86) Printed port 1752, a bottom opening 1754, and a central cavity 1756 are located in the main body 1758 of the nozzle 1750. Laser energy (i.e., three beams LI, L2, L3) can be directed through the top opening 1752 of the nozzle, and a substrate (not shown) will be placed under the nozzle. The nozzle 1750 has two gas inlets. The first inlet 1760 is used to contain a gas including a carbon-containing secondary element (ie, CO, co2, etc.), and the second inlet 1770 is used to contain an inert gas (as described above). The first gas inlet 1760 communicates with an outer tube 1212 arranged around the outer periphery of the nozzle 1750 body 1758 (that is, in a ring shape). The carbon-containing gas is introduced into the first gas inlet 176 (at a predetermined pressure) and flows around the nozzle body 1758 through the outer pipe 1762. A plurality of inner tubes 1764 extend from the outer tube 1762 into the cavity 1756 of the nozzle in a generally light shot to introduce a carbonaceous gas into the mouth cavity. The inner tube I764 should be arranged downward to the bottom opening 1754, so as to direct the carbon-containing gas to the bottom opening 1754 of the nozzle 1750, and then to the substrate being manufactured by diamond or DLC coating. The second gas inlet 1770 communicates with a ring 1772 which is placed around the nozzle 1750 body 1758 (that is, in a ring shape). The inert gas (as described above) is introduced into the second gas inlet 1770 (at a predetermined pressure) and flows through the outer tube 1772 to the periphery of the mouth-producing body 1758. Several inner tubes 1774 extend approximately lightly from the outer tube 1772 into the mouth cavity 1756 to introduce a carbon-containing gas into the nozzle cavity. The inner tubes 177 4 may be disposed downwardly toward the bottom opening 1754 so as to direct the inert gas toward the bottom opening of the nozzle 1750 ′ and then to the substrate undergoing diamond or DLC coating manufacture. Generally speaking, the outer tubes 1762 and 1772 are runners similar to transfer molds, while the inner tubes 1764 and 1114 are runners similar to transfer molds. As shown in Figure 17C, the inner tube 1775 (like 1774) is a nozzle. _ 8 7 _ This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling (This page)

87 體1759(如同1758)向下軸抖出至嗔嘴底部。 ,18係表示本發明之方法對二似CVD方法如何可作為 ^處理過程…基質_係置於真空環境(®示如一鐘 形罩)1804内。整個基質不經預熱處理,將射自能源18〇8 之能量光束1806照射於基質。能源18〇8可設於真空環境外 。結果,如圖所示能量光束18〇6會經由一適當窗口 1812進 入真空環境(即,進入鐘形罩)内β其餘為利用本發明作為 似CVD方法中一加工方法之要素已不需示於圖18,因^ 及其類似方法均眾所熟知。 圖19表示本發明另一實施例。依據本實施例,一靶材 1924 ’例如石墨’可容放於噴嘴192〇之外或之内,並由一 具有能量光束1928之能源1926加以照射。能源1926可藉 由利用必要之透鏡以及形成足夠之參數自能源19〇2導射。 既經因此證實本反應過程可如何加以完成、變化並控 制’顯然本發明之技術方法可利用於一基質上製造出變化 無窮之金剛石與DLC鍍層組成物以及幾何形狀(外形、輪 廓、等等)。以下之論述係意在加以說明而非加以限制。 按使用雷射以形成剛石或DLC鍛層係最近之大發現, 而僅為一般人概略知曉,於上文已簡短論及》 經濟部中央標隼局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 然而於本發明中’最好採用三個不同雷射之組合,卻 帶來令人驚異的效果’並係以前所未有之方式,於基質上 形成金剛石、DLC以及其他含碳鍍層,包括: •金剛石鍍層(Cx *其中χ係一晶體内之碳原子數); •似金剛石碳鐘層(Cx) ’顯示一 Sp /Sp之鍵合結構; - 88 - 本紙張尺度適用中國國家標準(CNS)A4規格(210x297公釐) B7 經濟部中央標準局員工消費合作社印製 五、發明説明(88 ) •非晶質碳鏡層(Cx) ’顯示一 sp2/sp3之鍵合結構; •玻璃石墨、鍍層(Cx),顯示一 sp?/sp3之鍵合結構; •石墨鍍層(Cx),顯示一 sp2之鍵合結構;以及 • 士ullerenes ( Cx),顯示一 sp2之鍵合結構。 採用三道雷射光束,同時自基質組成物中分離含分子 碳並擴散碳,乃對本發明之技法提供一高度之固有塑性( 變通性)並因此提供了若干優點,包括: •將含碳分子(已存於基質内,如鋼以及碳化鎢内)轉 化成純碳; •純碳之轉化可於表面下(亦即,於造材區内)或表面 上進行,並只限於基質内所存在之含分子碳數量; •視特殊用途而定,雷射可予以聚焦(亦即,快速反 應時表面之熔削)或散焦(亦即,缓慢反應時之擴散作用)。 雷射之一係為一紫外線雷射,例如Xecl或KrF激態原 子雷射。如此對於導入例如一氧化碳(Co)之含碳副元素係 極為有利。藉由採用一Xecl或krF激態原子雷射,單光子 能量乃依一般含碳分子之鍵離解次序進行。因此,此一雷 射可斷裂化學鍵並中和分子以形成電漿。一氧化碳之鍵離 解能量為1077 kJ/mol,此在含碳分子中係為相當強(若非 最強)之化學鍵。經分析單光子能量強度以及碳分子之電 子曲線圖,顯然Xecl或KrF任一雷射之三重光子過程均可 斷裂碳化學鍵以提供如:碳原子、碳離子等之活性品類, 此係有利於作為金剛石之初級粒子。 紅外線(IR)雷射(亦即:Nd ·· YAG以及C0 2 )亦為全部反 一 8 9 一 本紙張尺度適用中國國家標準(CNS ) A4規格(2!ΟΧ297公釐) (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明() 8 9 應過程之要素。此等雷射之單光子能量強度恰好足夠使分 子移動至其震動與旋轉之激發狀態。IR雷射之能量一般係 不足以自中性分子斷裂化學鍵或敲離電子,因此,它們一 般無法自行分離分子’除非是使用於共振多光子作用或一 被誘導之化學反應中。然而,C〇2雷射通常係能量極大, 而可提供高光子密度使多光子作用活躍進行,此種多光子 作用可引發進一步反應與澱積作用。C〇2雷射可產生類似 高壓、高溫(HPHT)作用之環境。 如上所述,可選擇性地利用一噴嘴以導入一副元素至 反應系統中,該副元素可為氣體形態。此外,一屏蔽(保 護)氣體可用以包容所欲之副元素亦一併提及。 一鈍性(惰性)(亦即,對正常發生之全部反應過程而 言)氣體可用以導送副元素。隋性氣體之用途係在:(幻防 止氣化,(b)為副元素造成一“包覆層”,(c)將含碳氣體 流導流至基質上。依所選用之含碳氣體而,隋性氣體可選 自包括:氦(He),氖(Ne),氬(Ar),氪(Kr),氙(Xe),以 及氪(N)之群,而其中以前三者成本最低廉。 由噴嘴導送之氣體亦可作為一“能量轉移,,氣(劑), 此時該氣體可用以吸收要導送至存於含碳氣體内之碳化物 之能量’如此可造成含碳氣體内化學鍵之斷裂。視所選用 之含碳氣體(即是,C0,C〇2等),以及所採用之雷射光源 (即,—具有低強度光子能量之紅外線雷射,或—具有高 強度光子能量之紫外線雷射),能量轉移氣體可選自包括 :He ’ Ne ’ Ar,Kr,Xe,N,Η以及SFe之群係極為有利。 —90 — 本紙張尺度適用中國國家檩準(CNS ) A4規格(210X297公釐) --------G(k—— (請先閲讀背面之注意事項再填寫本頁) 訂87 Body 1759 (like 1758) shakes down to the bottom of the pout. The 18 series shows how the method of the present invention can be used as a processing method for the two similar CVD methods ... The substrate is placed in a vacuum environment (® shown as a bell-shaped cover) 1804. The entire substrate is not preheated, and an energy beam 1806 from an energy source 1808 is irradiated onto the substrate. Energy 1808 can be set outside the vacuum environment. As a result, as shown in the figure, the energy beam 1806 enters the vacuum environment (ie, enters the bell jar) through an appropriate window 1812. The remaining β is an element that utilizes the present invention as a processing method in the CVD-like method and is not required Figure 18 is well known because it is similar. Fig. 19 shows another embodiment of the present invention. According to this embodiment, a target material 1924 'such as graphite' can be accommodated outside or inside the nozzle 1920 and irradiated by an energy source 1926 having an energy beam 1928. The energy source 1926 can be guided from the energy source 202 by using necessary lenses and forming sufficient parameters. Once it is thus proved how the reaction process can be completed, changed and controlled, it is obvious that the technical method of the present invention can be used on a substrate to produce infinitely variable diamond and DLC coating compositions and geometric shapes (shape, contour, etc.) . The following discussion is intended to be illustrative and not restrictive. According to the recent discovery of the use of lasers to form a diamond or DLC forging layer, it is only known to the general public. It has been briefly discussed above. Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the back Note: Please fill out this page again) However, in the present invention, 'the combination of three different lasers is best, but it has amazing results' and it is unprecedented to form diamond, DLC and other materials on the substrate. Carbon coatings, including: • diamond coatings (Cx * where χ is the number of carbon atoms in a crystal); • diamond-like carbon clock layers (Cx) 'shows a Sp / Sp bond structure;-88-this paper size applies China National Standard (CNS) A4 (210x297 mm) B7 Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (88) • Amorphous carbon mirror layer (Cx) 'shows a sp2 / sp3 bond Structure; • Glass graphite, coating (Cx), showing a sp? / Sp3 bonding structure; • Graphite coating (Cx), showing a sp2 bonding structure; and • Ullerenes (Cx), showing a sp2 bond合 结构。 Structure. Using three laser beams while separating molecular carbon and diffusing carbon from the matrix composition simultaneously provides a high degree of inherent plasticity (workability) to the technique of the present invention and therefore provides several advantages, including: (Already stored in the matrix, such as steel and tungsten carbide) into pure carbon; • The conversion of pure carbon can be carried out under the surface (that is, in the material area) or on the surface, and it is limited to the existence in the matrix The amount of molecular carbon contained; • Depending on the particular application, the laser can be focused (ie, melting of the surface during fast response) or defocused (ie, diffusion during slow response). One of the lasers is an ultraviolet laser, such as a Xecl or KrF excimer laser. This is extremely advantageous for introducing a carbon-containing subsidiary element system such as carbon monoxide (Co). By using an Xecl or krF excited-state laser, the single-photon energy is carried out in the order of the dissociation of the bonds of ordinary carbon-containing molecules. Therefore, this laser can break chemical bonds and neutralize molecules to form a plasma. The bond dissociation energy of carbon monoxide is 1077 kJ / mol, which is a fairly strong (if not the strongest) chemical bond among carbon-containing molecules. After analyzing the single photon energy intensity and the electronic curve of the carbon molecule, it is clear that the triple photon process of either Xecl or KrF laser can break the carbon chemical bond to provide active species such as carbon atoms, carbon ions, etc., which is beneficial as Primary particles of diamond. Infrared (IR) lasers (ie, Nd · YAG and C0 2) are all inverse 8 9 a paper size applies Chinese National Standard (CNS) A4 specification (2! 〇 × 297 mm) (please read the back first) Please note this page, please fill in this page) Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () 8 9 Elements of the application process. The intensity of the single photon energy of these lasers is just enough to move the molecule to its excited state of vibration and rotation. The energy of IR lasers is generally not sufficient to break chemical bonds or knock electrons from neutral molecules. Therefore, they are generally unable to separate molecules by themselves unless they are used in resonance multiphoton interaction or an induced chemical reaction. However, Co2 lasers are usually very energy-intensive, and can provide high photon density for active multiphoton interactions. Such multiphoton interactions can trigger further reactions and depositions. Co2 lasers can produce environments similar to high-pressure, high-temperature (HPHT) effects. As described above, a nozzle may be selectively used to introduce a secondary element into the reaction system, and the secondary element may be in a gaseous form. In addition, a shielding (protective) gas can be used to contain the desired secondary elements. An inert (inert) gas (that is, for all reaction processes that normally occur) can be used to conduct secondary elements. The purpose of inert gas is: (to prevent gasification, (b) to create a "coating layer" for secondary elements, (c) to direct the flow of carbon-containing gas onto the substrate. Depending on the carbon-containing gas selected The inert gas can be selected from the group consisting of: helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), and krypton (N), among which the first three are the least expensive The gas guided by the nozzle can also be used as an "energy transfer, gas (agent). At this time, the gas can be used to absorb the energy to be guided to the carbides stored in the carbon-containing gas'. This can cause a carbon-containing gas. Internal chemical bond rupture. Depending on the carbon-containing gas used (ie, C0, C02, etc.) and the laser light source used (ie,-infrared laser with low-intensity photon energy, or-high intensity) Photon energy (ultraviolet laser), the energy transfer gas can be selected from the group consisting of: He 'Ne' Ar, Kr, Xe, N, Η, and SFe. —90 — This paper standard is applicable to China National Standard (CNS) ) A4 size (210X297mm) -------- G (k—— (Please read the precautions on the back before filling This page) book

經濟部中央標準局負工消費合作社印製 广為促進基質上之金剛石與DLC鍍層之生成,可將一含 碳氧體導入反應系統以作為一副元素。副元素之適當選擇 包括: (I )碳氧化物,例如:二氧化碳(c〇2)以及一氧化碳 (co), 有機分子,例如••甲烷氣(CH4),乙烷氣(C2He) ,乙烯(c2H4),丙烷(W) , 丁烷(CiH 己烷( ,或 2 (III) 聚合物,例如含氢及氧原子之材料,以及 (IV) 等中子素(ch8 coch3 ) 先前技術之内容(即,如美國專利4 981 717案所揭示 者}係一般僅限於建議使用一與六氟化硫(SFe)連用之紅外 線(C〇2)雷射以轉移充分能量而斷開甲烷氣(CH4)内之碳氫 鍵0 反之,舉例而言,依據本發明,紅外線雷射(c〇2)亦 可使用乙烯(C2H4)氣體(作用碳之副元素)。依據本發明之 技法,雷射係足以斷裂乙烯鍵,無需使用其他氣體或作用 劑(即,sf6 )來轉移能量以斷裂碳鍵。 依據本發明,可採用一強力co2雷射(與其他雷射合併 使用)。該C〇2雷射可提供極高之光子密度而使多光子作用 活躍。此等多光子作用可引發進一步反應與澱積作用,並 能產生類似高壓、高溫作用之環境。 (請先閱讀背面之注意事項再填寫本頁) --------------®------1T-----Μ___ nn · -91 - - - m I I · 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公羞) Β4 1 07 3 58 Μ 鎮請委KJCRH: 後是否變更及實質内容 Α7 Β7 伙年Η: 經濟部中央標準局員工消費合作社印製 五、發明説明(以 主要部分代表符號說明 100 流程 220,220 處理基質 204,224,304,404,1304,1306,1308,1310,1326 基質之表面 300,400,700,800.900, 表面處理系統 BDS 光束傳送系統 330,430, 選取地區 500,550,722,1730,1750.1920 噴嘴 506 中央軸向通道 508 環狀體 El,Ε2,Ε3 雷射光束 510,520,530,561,580 入口 512,522,532,562,582, 環狀流道 514,524,534,564,584, 出口 BG 緩衝氣體 SS 副來源 SF 隔絕氣體 552,554,1734 噴嘴體 592 環狀平面 602 碳化鎢基質 630,634, 碳化鎢顆粒 723 軸心線 804 支座 808 突起 810,814 真空通道 1150,1206 造材(擴散)帶 1154,1204,1314,1316,1320,1324,1330,1554,1566 金剛石(或DLC)鍍層 1156 散亂零星(人造物) 1202(1202a,1202b,1202c,1202d) 矩形基質 1252 矩形透鏡 1262,1264,1266 電子光束 1270 聚集光成 -92 - (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度逋用中國國家標準(CNS ) Α4規格(210X297公釐) 五、發明説明(92) 經濟部中央標準局員工消費合作社印製 1338,1340,1342,1344 鍍層部分 1352,1354,1356,1358,1360,1362 鍍層結構 1366 蛇形鍍層 1372a... 1372i 鍍層區段 1380 - 圓筒形鍍層 1384a,1384b 帶狀鍍層 1392 鍍層結構 tl, t2 高度 1402,1412 鍍覆管狀基質 1404,1806,1928 能量光束 1406,1416, 管狀基質的一個(開口)端 1408,1418 管狀基質的另一端 1410 拋物線反射面 1420 射流 1552,1562, 鋼珠轴承的組件 1600 鍍覆圓形刀具 1602,1622,1642,1662,1682 端銑刀 1604 一轴部 1606 一刀槽部 1608 一刀尖 1610,1630,1664,1684 電漿 1646 選定區(小斑點) 1732 噴嘴體 1734 轴向延伸孔 1752 頂開口 1754 底開口 1756 中央空腔 1758,1759, 噴嘴本體 1760,1770 第一、二入口 1762,1772 外管 1764,1774,1775 内管 1804 真空環境 1812 適當窗口 1924 輕材 —93 _ (請先閲讀背面之注意事項再填寫本頁) 本纸張尺度適用中國國家標準(CNS ) A4規格(210X297公釐)Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs To promote the formation of diamond and DLC coatings on the substrate, a carbon-containing oxide can be introduced into the reaction system as a secondary element. Appropriate choices of secondary elements include: (I) carbon oxides, such as carbon dioxide (c02) and carbon monoxide (co), organic molecules, such as • methane gas (CH4), ethane gas (C2He), ethylene (c2H4 ), Propane (W), butane (CiH hexane (, or 2 (III) polymers, such as materials containing hydrogen and oxygen atoms, and (IV) neutrons (ch8 coch3) the content of the prior art (ie As disclosed in US Pat. No. 4,981,717}, it is generally limited to the use of an infrared (C02) laser combined with sulfur hexafluoride (SFe) to transfer sufficient energy to disconnect methane gas (CH4). Conversely, for example, according to the present invention, the infrared laser (c0) can also use ethylene (C2H4) gas (a secondary element acting on carbon). According to the technique of the present invention, the laser system is sufficient to break Vinyl bond, no other gas or agent (ie, sf6) is needed to transfer energy to break the carbon bond. According to the present invention, a powerful co2 laser can be used (combined with other lasers). The Co2 laser can Provides very high photon density to make multiphoton active. The sub-action can cause further reactions and deposition, and can produce an environment similar to high-pressure, high-temperature effects. (Please read the precautions on the back before filling this page) -------------- ® ------ 1T ----- Μ ___ nn · -91---m II · This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 male shame) Β4 1 07 3 58 Μ Please ask Committee KJCRH: Whether it will be changed in the future and its substantive content Α7 Β7 Years: Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the invention Surface of the substrate 1300, 300, 400, 700, 800.900, Surface treatment system BDS beam delivery system 330, 430, Selected area 500, 550, 722, 1730, 1750. 1920 Nozzle 506 Central axial channel 508 Ring El, EI2, Ε3 Laser beam 510, 520, 530, 561, 580 Inlet 512, 522, 532, 562, 582, Annular flow channel 514, 524 , Outlet BG Buffer gas SS Secondary source SF Barrier gas 552,554,1734 Nozzle body 592 Ring plane 602 Tungsten carbide matrix 630,634, Tungsten carbide particles 723 axis line 804 support 808 protrusion 810,814 vacuum channel 1150,1206 material (diffusion) belt 1154,1204,1314,1316,1320,1324,1330,1554,1566 diamond (or DLC) coating 1156 scattered scattered (artificial 1202 (1202a, 1202b, 1202c, 1202d) Rectangular substrate 1252 Rectangular lens 1262, 1264, 1266 Electron beam 1270 Concentrating light into -92-(Please read the precautions on the back before filling this page) This paper uses China National Standard (CNS) A4 Specification (210X297 mm) V. Description of Invention (92) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 1338, 1340, 1342, 1344 Coating parts 1352, 1354, 1356, 1358, 1360, 1362 Coatings Structure 1366 Serpentine coating 1372a ... 1372i Coating section 1380-Cylindrical coating 1384a, 1384b Strip coating 1392 Coating structure tl, t2 Height 1402, 1412 Plated tubular substrate 1404, 1806, 1928 Energy beam 1406, 1416, One (open) end of the tubular substrate 1408, 1418 The other end of the tubular substrate 1410 Parabolic reflective surface 1420 Jet 1552, 1562, assembly of steel ball bearings 1600 Coated round cutter 1602, 1622, 1642, 1662, 1682 Milling cutter 1604 One shaft part 1606 One sipe part 1608 One tool tip 1610, 1630, 1664, 1684 Plasma 1646 Selected area (small spots) 1732 Nozzle body 1734 Axial extension hole 1752 Top opening 1754 Bottom opening 1756 Central cavity 1758, 1759 , Nozzle body 1760,1770 First and second inlets 1762,1772 Outer tube 1764,1774,1775 Inner tube 1804 Vacuum environment 1812 Appropriate window 1924 Light material—93 _ (Please read the precautions on the back before filling this page) This paper Zhang scale is applicable to China National Standard (CNS) A4 specification (210X297 mm)

Claims (1)

範 利 專 請 中 ABC 8 D 年 正修 89.1 經濟部t央標準局員·工消費合作社印製 (修正本) 1. 一種帶有碳組成元素的基質之處理方法,該方法包 括步驟有: 將雷射能量導向一基質的表面; 藉利用該電射能量激活在基質內選定量的碳組成元素 ,由此達成碳組成元素朝向該基質的表面移動; 使來自基質選定量的碳組成元素蒸發;及 藉利用該雷射能量使已蒸發碳組成元素的結構改質以 便自已蒸發碳組成元素中在基質的表面上形成一 金剛石或似金剛石碳物質。 2. 依申請專利範圍第1項之方法,復包括步驟有:持 續將雷射能量導向基質的表面,由此將該金剛石或似金剛 石碳物質直接在基質表面的下方形成- 3. 依申請專利範圍第1項之方法,復包括步驟有:以 該雷射能量誘發出製成之金剛石或似金剛石碳鍍層內之物 理應力。 4. 依申請專利範圍第1項之方法,復包括步驟有:以 該雷射能量完成鍍層之表面加工。 5. 依申請專利範圍第1項之方法,復包括步驟有:持 續將雷射能量導向基質的表面,以便在基質上製成一多層 金剛石或似金剛石碳鏟層,該多層中一層係製成在該基質 的表面上者,而其餘多層中的每一層則設置在該多層中剩 餘層的另一層上。 6. 依申請專利範圍第1項之方法,復包括步驟有::於 基質上導入一種副元素,其中該副元素爲一種含碳材料。 (請先閲讀背面之注意事項再填寫本頁) 裝· 訂 線 丄珀士闽闳含後浪f ΓΝς、A4找姑· ί 21 Ο X 297公势) 範 利 專 請 中 ABC 8 D 年 正修 89.1 經濟部t央標準局員·工消費合作社印製 (修正本) 1. 一種帶有碳組成元素的基質之處理方法,該方法包 括步驟有: 將雷射能量導向一基質的表面; 藉利用該電射能量激活在基質內選定量的碳組成元素 ,由此達成碳組成元素朝向該基質的表面移動; 使來自基質選定量的碳組成元素蒸發;及 藉利用該雷射能量使已蒸發碳組成元素的結構改質以 便自已蒸發碳組成元素中在基質的表面上形成一 金剛石或似金剛石碳物質。 2. 依申請專利範圍第1項之方法,復包括步驟有:持 續將雷射能量導向基質的表面,由此將該金剛石或似金剛 石碳物質直接在基質表面的下方形成- 3. 依申請專利範圍第1項之方法,復包括步驟有:以 該雷射能量誘發出製成之金剛石或似金剛石碳鍍層內之物 理應力。 4. 依申請專利範圍第1項之方法,復包括步驟有:以 該雷射能量完成鍍層之表面加工。 5. 依申請專利範圍第1項之方法,復包括步驟有:持 續將雷射能量導向基質的表面,以便在基質上製成一多層 金剛石或似金剛石碳鏟層,該多層中一層係製成在該基質 的表面上者,而其餘多層中的每一層則設置在該多層中剩 餘層的另一層上。 6. 依申請專利範圍第1項之方法,復包括步驟有::於 基質上導入一種副元素,其中該副元素爲一種含碳材料。 (請先閲讀背面之注意事項再填寫本頁) 裝· 訂 線 丄珀士闽闳含後浪f ΓΝς、A4找姑· ί 21 Ο X 297公势) 々、申請專利範圍 ABCD 經濟部中夬標準局員.工消費合作社印製 7. 依申請專利範圍第1項之方法,復包括步驟有:於 基質上導入一種副元素,其中該副元素爲一選自包括甲烷 、乙烷、乙烯、丙烷、丁烷、己烷、一氧化碳及二氧化碳 之群的含碳材料。 8. 依申請專利範圍第1項之方法,復包括步驟有:於 基質上導入一種副元素,其中該副元素爲一選自包括氫與 氧的含碳聚合物材料。 9. 依申請專利範圍第1項之方法,復包括步驟有:於 基質上導入一種副元素,其中該副元素爲酮。 10. 依申請專利範圍第1項之方法,復包括步驟有:以 電力偏壓基質。 11. 依申請專利範圍第1項之方法,復包括步驟有:將 該電射能量導向僅僅在該基質的表面選定區。 12. 依申請專利範圍第1項之方法,其中基質爲一鋼材。 13. 依申請專利範圍第12項之方法,其中該鋼材爲不 銹鋼。 14. 依申請專利範圍第12項之方法,其中該鋼材爲碳 化鋼》 15. 依申請專利範圍第1項之方法,其中該雷射能量係 由三種明顯的雷射提供,即:一第一雷射,一第二雷射以 及一第三雷射,每一雷射導向基質的同一表面而至少三種 中的一種雷射係進行蒸發步驟。 16. 依申請專利範圍第15項之方法,其中該第一雷射 係爲一激態原子雷射。 / -2 - (請先閲讀背面之注意事項再填寫本頁) •裝- 訂 線 欠蚯?JI·疳诎用中困困定德逢(CNS ) A4规格(210 X :297公釐) L 經濟部中央標隼局員工消費合作社印製 A、8 B8 C8 D8六、申請專利範圍 17.依申請專利範圍第15項之方法,其中該激態原子 雷射係經賦予脈衝者。 18. 依申請專利範圍第15項之方法,其中該第二雷射 係爲一 Nd:YAG雷射。 19. 依申請專利範圍第15項之方法,其中該第三雷射 係爲一 C02雷射。 20. 依申請專利範圍第15項之方法,其中該第一雷射 係爲一激態原子雷射;第二雷射係爲一 Nd:YAG雷射;以 及第三雷射係爲一 C02雷射》 21. —種帶有碳組成元素的基質之處理方法,該方法 包括步驟有: 將雷射能量導向一基質的表面,並以該雷射能量 (a) 引起在基質內選定量的碳質元素產生局部加 熱,以便使該碳質元素移向該基質的表面而 由該雷射能量予以蒸發: (b) 藉該雷射能量使已蒸發碳質元素的結構改質 :以及 (c) 自該已蒸發碳組成元素中在至少該基質的表 面上形成一金剛石或似金剛石碳材料。 22. —種帶有碳組成元素的基質之處理方法,該方法包 括步驟有: 將雷射能量導向一基質的表面,並以該雷射能量 (a)引起在基質內選定量的含碳元素產生局部加 熱,以便使該含碳元素移向該基質的表齒而 V;, 丫裝------訂-----:、線 (請先閔讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS〉A4規格(2!0〆297公釐) 六、申請專利範圍 ABCD 由該雷射能量予以蒸發; (b)藉該雷射能量使已蒸發含碳元素的結構改質 :以及 (C)自該已蒸發含碳元素中在至少該基質的表面 上形成一金剛石或似金剛石碳材料* 23.—種帶有碳組成元素的基質之處理方法,該方法包 括步驟有: 將雷射能量導向一基質的表面; 藉利用該雷射能量激活在基質內選定量的碳組成元素, 由此達成碳組成元素朝向該基質的表面移動; 藉利用該雷射能量使選定量的碳組成元素蒸發;以及 藉利用該雷射能量使已蒸發碳組成元素的結構改質, 自已蒸發碳組成元素中至少在該基質的表面上形 成一金剛石或似金剛石碳物質。 • n fm I HI · (請先閲讀背面之注意事項再填寫本1) —裝. 訂 線- 經濟部中夬櫺準局員工消費合作社印製 -4 - 太紙張尺度適用中國國家標隼(〇呢)八4規格(210父297公釐)Fan Li specially asked the Chinese ABC to revise in 8 D year 89.1 Printed by the Central Bureau of Standards of the Ministry of Economic Affairs · Industrial and Consumer Cooperatives (Revised) 1. A method for treating a substrate with carbon components, the method includes the steps: Energy directed to the surface of a substrate; using the radioactive energy to activate a selected amount of carbon constituent elements in the substrate, thereby achieving that the carbon constituent elements move toward the surface of the substrate; evaporating a selected amount of carbon constituent elements from the matrix; and The laser energy is used to modify the structure of the evaporated carbon constituent elements to form a diamond or diamond-like carbon substance on the surface of the substrate from the evaporated carbon constituent elements. 2. The method according to item 1 of the scope of patent application, which includes the steps of: continuously directing laser energy to the surface of the substrate, thereby forming the diamond or diamond-like carbon material directly below the surface of the substrate-3. According to the patent application The method of the first item of the scope includes the steps of: inducing physical stress in the diamond or diamond-like carbon coating produced by using the laser energy. 4. The method according to item 1 of the scope of patent application, including the steps of: completing the surface processing of the coating with the laser energy. 5. The method according to item 1 of the scope of patent application, comprising the steps of: continuously directing laser energy to the surface of the substrate, so as to form a multilayer diamond or diamond-like carbon shovel layer on the substrate, and one layer of the multilayer is made of It is formed on the surface of the substrate, and each of the remaining layers is disposed on another layer of the remaining layers in the layer. 6. According to the method of the first patent application scope, the method further includes the steps of: introducing a secondary element into the substrate, wherein the secondary element is a carbonaceous material. (Please read the precautions on the back before filling in this page.) Binding and Threading (Perth Min) Including the back wave f ΓΝς, A4 to find the Gu · ί 21 Ο X 297 public power) Fan Li specially asked ABC 8 D year is correcting 89.1 Printed by the Central Bureau of Standards, Ministry of Economic Affairs, Industrial and Consumer Cooperatives (Revised) 1. A method for treating a substrate with carbon constituent elements, the method includes the steps of: directing laser energy to the surface of a substrate; and using the electricity The radiation energy activates a selected amount of carbon constituent elements in the matrix, thereby achieving the movement of the carbon constituent elements toward the surface of the matrix; evaporating the selected amount of carbon constituent elements from the matrix; and using the laser energy to make the evaporated carbon constituent elements The structure is modified to form a diamond or diamond-like carbon material on the surface of the substrate from the self-evaporated carbon constituent elements. 2. The method according to item 1 of the scope of patent application, which includes the steps of: continuously directing laser energy to the surface of the substrate, thereby forming the diamond or diamond-like carbon material directly below the surface of the substrate-3. According to the patent application The method of the first item of the scope includes the steps of: inducing physical stress in the diamond or diamond-like carbon coating produced by using the laser energy. 4. The method according to item 1 of the scope of patent application, including the steps of: completing the surface processing of the coating with the laser energy. 5. The method according to item 1 of the scope of patent application, comprising the steps of: continuously directing laser energy to the surface of the substrate, so as to form a multilayer diamond or diamond-like carbon shovel layer on the substrate, and one layer of the multilayer is made of It is formed on the surface of the substrate, and each of the remaining layers is disposed on another layer of the remaining layers in the layer. 6. According to the method of the first patent application scope, the method further includes the steps of: introducing a secondary element into the substrate, wherein the secondary element is a carbonaceous material. (Please read the precautions on the back before filling in this page.) Binding and Threading (Perth Min) with back wave f ΓΝς, A4 to find out. Ί 21 Ο X 297 public power) 申请 Application for patent scope ABCD Ministry of Economic Standards Bureau member. Printed by the Industrial and Consumer Cooperatives. 7. According to the method of the scope of patent application, the method includes the following steps: introducing a side element on the substrate, wherein the side element is selected from the group consisting of methane, ethane, ethylene, propane, Carbonaceous material in the group of butane, hexane, carbon monoxide and carbon dioxide. 8. The method according to item 1 of the patent application scope, further comprising the steps of: introducing a secondary element onto the substrate, wherein the secondary element is a carbon-containing polymer material selected from the group consisting of hydrogen and oxygen. 9. The method according to item 1 of the scope of patent application, further comprising the steps of: introducing a side element on the substrate, wherein the side element is a ketone. 10. The method according to item 1 of the scope of patent application, further comprising the steps of: biasing the substrate with electric power. 11. The method according to item 1 of the patent application scope, further comprising the steps of: directing the radioactive energy to a selected area only on the surface of the substrate. 12. The method according to item 1 of the scope of patent application, wherein the substrate is a steel material. 13. The method according to item 12 of the scope of patent application, wherein the steel is stainless steel. 14. The method according to item 12 of the scope of patent application, wherein the steel is carbonized steel "15. The method according to item 1 of the scope of patent application, wherein the laser energy is provided by three obvious lasers, namely: a first Laser, a second laser and a third laser, each laser is directed to the same surface of the substrate and at least one of the three laser systems is subjected to an evaporation step. 16. The method according to item 15 of the patent application, wherein the first laser is an excimer laser. / -2-(Please read the precautions on the back before filling this page) • Installation-Threading Difficulty in using JI · Ding Defeng (CNS) A4 specification (210 X: 297 mm) L Printed by employees' consumer cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs A, 8 B8 C8 D8 6. Scope of patent application 17. The method of claim 15 in which the excimer laser is pulsed. 18. The method according to item 15 of the patent application scope, wherein the second laser is a Nd: YAG laser. 19. The method according to item 15 of the patent application scope, wherein the third laser is a C02 laser. 20. The method according to item 15 of the scope of patent application, wherein the first laser system is an exciton atom laser; the second laser system is an Nd: YAG laser; and the third laser system is a C02 laser. Shooting 21. 21. A method for treating a substrate with carbon constituent elements, the method comprising the steps of: directing laser energy to a surface of a substrate, and using the laser energy (a) to cause a selected amount of carbon in the substrate The mass element generates local heating so that the carbonaceous element moves toward the surface of the substrate and is evaporated by the laser energy: (b) the structure of the evaporated carbonaceous element is modified by the laser energy: and (c) A diamond or diamond-like carbon material is formed from the evaporated carbon constituent elements on at least the surface of the substrate. 22. —A method for treating a substrate with carbon constituent elements, the method comprising the steps of: directing laser energy to a surface of a substrate, and using the laser energy (a) to cause a selected amount of carbon-containing elements in the substrate; Local heating is generated so that the carbon-containing element moves to the surface teeth of the substrate and V ;, 装 装 -------- Order ----- :, line (please read the precautions on the back before filling in this Page) This paper size is in accordance with Chinese national standard (CNS> A4 specification (2! 0〆297 mm). 6. Patent application scope ABCD will be evaporated by the laser energy; (b) the evaporated carbon will be evaporated by the laser energy Structural modification of elements: and (C) forming a diamond or diamond-like carbon material on at least the surface of the substrate from the evaporated carbon-containing element * 23. A method for treating a substrate with a carbon constituent element, the The method includes the steps of: directing laser energy to a surface of a substrate; using the laser energy to activate a selected amount of carbon constituent elements in the matrix, thereby achieving the movement of the carbon constituent elements toward the surface of the substrate; and using the laser Energy steams a selected amount of carbon constituents ; And by using the laser energy to modify the structure of the evaporated carbon constituent elements, at least a diamond or diamond-like carbon substance is formed on the surface of the substrate from the evaporated carbon constituent elements. • n fm I HI · (Please first Read the notes on the back and fill in this 1)-Packing. Thread-Printed by the Consumers' Cooperatives of the China Standards Bureau of the Ministry of Economic Affairs-4-The paper size is applicable to the Chinese national standard (0?) 8 4 specifications (210 parent 297) Mm)
TW084107358A 1995-01-17 1995-07-17 Surface modification and/or fabrication techniques TW394800B (en)

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PCT/US1995/000782 WO1995020253A2 (en) 1994-01-18 1995-01-17 Using lasers to fabricate coatings on substrates
PCT/US1995/005941 WO1995031584A1 (en) 1994-05-12 1995-05-11 Surface treatment techniques

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI415700B (en) * 2009-08-03 2013-11-21 Union Tool Kk Perforated tool with amorphous carbon coating and perforation tool
TWI460067B (en) * 2010-02-24 2014-11-11 Hon Hai Prec Ind Co Ltd Surface activating process device
TWI461605B (en) * 2010-12-27 2014-11-21 Whirlpool Sa Piston assembly for alternative compressor
CN115223833A (en) * 2021-04-21 2022-10-21 翔名科技股份有限公司 Protective coating for semiconductor parts and method for producing same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI415700B (en) * 2009-08-03 2013-11-21 Union Tool Kk Perforated tool with amorphous carbon coating and perforation tool
TWI460067B (en) * 2010-02-24 2014-11-11 Hon Hai Prec Ind Co Ltd Surface activating process device
TWI461605B (en) * 2010-12-27 2014-11-21 Whirlpool Sa Piston assembly for alternative compressor
CN115223833A (en) * 2021-04-21 2022-10-21 翔名科技股份有限公司 Protective coating for semiconductor parts and method for producing same

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