CN115223833A - Protective coating for semiconductor parts and method for producing same - Google Patents

Protective coating for semiconductor parts and method for producing same Download PDF

Info

Publication number
CN115223833A
CN115223833A CN202110433334.8A CN202110433334A CN115223833A CN 115223833 A CN115223833 A CN 115223833A CN 202110433334 A CN202110433334 A CN 202110433334A CN 115223833 A CN115223833 A CN 115223833A
Authority
CN
China
Prior art keywords
layer
semiconductor
protective coating
seed layer
protective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110433334.8A
Other languages
Chinese (zh)
Inventor
吴宗丰
苏修贤
李文亮
蔡宇砚
周冠廷
赖泱蓉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FEEDBACK TECHNOLOGY CORP
Original Assignee
FEEDBACK TECHNOLOGY CORP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FEEDBACK TECHNOLOGY CORP filed Critical FEEDBACK TECHNOLOGY CORP
Publication of CN115223833A publication Critical patent/CN115223833A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases

Abstract

The semiconductor part protective coating of the present invention is applied to a semiconductor part, and includes a first seed layer and a first part protective layer. The first seed layer is deposited on the surface of the semiconductor part. In addition, a first part protection layer is deposited on the surface of the first seed layer such that the lattice orientation of the surface of the first part protection layer is the same as the lattice orientation of the surface of the first seed layer. Wherein the thickness of the first part protection layer is 7 times or more than 7 times of the thickness of the first seed layer. Wherein the first part passivation layer of the bottom layer has a characteristic direction, and grows along the characteristic direction when depositing the plurality of first part passivation layers, so that the first part passivation layer has a single-crystal-like structure, thereby increasing the plasma-resistant performance.

Description

Protective coating for semiconductor components and method for producing same
Technical Field
The present invention relates to a protective coating for semiconductor devices and a method for manufacturing the same, and more particularly, to a protective coating for semiconductor devices having a first seed layer and a method for manufacturing the same.
Background
In the semiconductor technology industry, conventional semiconductor processes such as Chemical Vapor Deposition (CVD), physical Vapor Deposition (PVD), reactive Ion Etching (RIE), panel and automated equipment applications, etc., employ a ceramic layer to protect metal components within a chamber. Since plasma etching is performed by applying electromagnetic energy to a gas containing a chemically reactive component, such as fluorine or chlorine, the plasma releases charged ions and impacts the wafer to etch the material and produce a chemical reaction. The plasma interacts with the material being etched to form volatile or non-volatile residues. Thus, the ceramic layer above the metal layer of the semiconductor component becomes a good protective layer. In addition, when the semiconductor component is exposed to the fluorine-based plasma, the etched ceramic layer is fluorinated to generate particles, which pollute the chamber environment and cause defects in the semiconductor component.
Plasma etch resistant coatings currently used to protect semiconductor components are based on plasma spraying. However, since the typical plasma etch resistant coating is a polycrystalline ceramic, the grain boundary etch rate in the polycrystalline ceramic is fast, which is prone to increase the surface roughness after etching and form contamination.
As semiconductor technology grows, device miniaturization is becoming the greatest concern, and the corresponding susceptibility to defects increases, the particles and contamination allowed for the deviceThe staining becomes more severe. To reduce particle contamination and defects caused by the chamber during processing, current techniques generally focus on material changes such as Y 2 O 3 、YF 3 、YOF、Y 3 Al 5 O 12 (YAG)、Er 3 Al 5 O 12 (EAG) and Y 2 O 3 -ZrO 2 A solid solution or a mixture comprising Y 2 O 3 With Al 2 O 3 Based on solid solutions and adding rare earth oxides such as Er 2 O 3 、Nd 2 O 3 、CeO 2 、Sm 2 O 3 、Yb 2 O 3 、La 2 O 3 、Sc 2 O 3 The plasma etching resistant layer can be selected from ceramic materials formed by transition metals with higher quality, such as oxide, nitride, fluoride, etc. of transition metals with atomic numbers 39 to 80 in the periodic table, and can also be formed by transition metal oxide, nitride or fluoride with different proportions to form a plasma etching resistant layer, or formed in a multi-layer film form, so as to further enhance the plasma etching resistant layer.
However, according to the TWI389248 patent, the Plasma-resistant Layer deposited by Atomic Layer Deposition (ALD) with a lattice orientation is more protective than the Plasma-resistant Layer deposited by Chemical Vapor Deposition (CVD), physical Vapor Deposition (PVD), plasma Spray (Plasma Thermal Spray). However, a very low deposition rate is required to grow a coating with a lattice orientation. Moreover, when the plasma-resistant layer with a suitable thickness needs to be deposited, a lot of time and cost are consumed.
Therefore, there is a need for new methods for manufacturing protective coatings for semiconductor devices or changes in their own structures to meet the requirements of high product characteristics.
Disclosure of Invention
The invention provides a semiconductor part protective coating, which has shorter processing time and can reduce the manufacturing cost. Moreover, the protective coating of the semiconductor part can improve the plasma corrosion resistance of the semiconductor part so as to reduce the pollution of the semiconductor part.
The semiconductor part protective coating of the present invention is applied to a semiconductor part, and includes a first seed layer and a first part protective layer. Wherein the first seed layer is deposited on the surface of the semiconductor component. In addition, a first part protection layer is deposited on the surface of the first seed layer such that the lattice orientation of the surface of the first part protection layer is the same as the lattice orientation of the surface of the first seed layer. Wherein the thickness of the first part protection layer is 7 times or more than 7 times of the thickness of the first seed layer.
The semiconductor part protective coating according to another embodiment of the present invention is applied to a semiconductor part, and includes a first seed layer, an adhesive layer and a first part protection layer. The first seed layer is deposited on the surface of the semiconductor component, and the adhesion layer is positioned between the first seed layer and the semiconductor component. In addition, a first part protection layer is deposited on the surface of the first seed layer such that the lattice orientation of the surface of the first part protection layer is the same as the lattice orientation of the surface of the first seed layer. Wherein the thickness of the first part protection layer is 7 times or more than 7 times of the thickness of the first seed layer.
The semiconductor component protective coating described above further includes at least one second seed layer and at least one second component protective layer, the second seed layer being deposited on the surface of the first component protective layer, and the second component protective layer being deposited on the surface of the second seed layer such that the lattice direction of the surface of the second component protective layer is the same as the lattice direction of the surface of the second seed layer.
In the semiconductor device protective coating described above, the lattice orientation of the surface of the second seed layer is different from the lattice orientation of the surface of the first seed layer.
In the semiconductor part protective coating described above, the lattice direction of the surface of the second part protective layer is different from the lattice direction of the surface of the first part protective layer.
In the semiconductor part protective coating described above, the deposition rate of the first part protective layer is 20 times or more than 20 times the deposition rate of the first seed layer.
In the semiconductor device protective coating described above, the first seed layer is selected from one of an oxide, a nitride, a boride, a fluoride, or any combination thereof of a transition metal element of atomic number 39 to 80 of the periodic table.
In the semiconductor element protective coating described above, the first element protective layer is selected from one of an oxide, a nitride, a boride, a fluoride, or any combination thereof of a transition metal element of atomic number 39 to 80 of the periodic table.
In the semiconductor part protection coating layer, the material of the first seed layer is different from the material of the first part protection layer.
In the semiconductor part protective coating described above, the lattice direction of the surface of the first part protective layer is along the closest packing direction.
In the semiconductor component protective coating described above, the coefficient of thermal expansion of the first component protective layer is between 6.0x 10-6/DEG C and 8.0x 10-6/DEG C.
The above semiconductor part protective coating has a flexural strength of the first part protective layer of more than 150MPa.
The protective coating for semiconductor device as described above, wherein the material of the adhesion layer is selected from alumina (Al) 2 O 3 ) Aluminum nitride (AlN) and aluminum fluoride (AlF) 3 ) One or any combination thereof.
The method for producing a protective coating for a semiconductor device of the present invention comprises the following steps. First, a first seed layer is deposited on a surface of a semiconductor device. Then, a first part protection layer is deposited on the surface of the first seed layer, so that the lattice direction of the surface of the first part protection layer is the same as the lattice direction of the surface of the first seed layer. Wherein the thickness of the first part protection layer is 7 times or more than 7 times of the thickness of the first seed layer.
In the method for manufacturing the protective coating of semiconductor device, the deposition rate of the first device protection layer is 20 times or more than 20 times of the deposition rate of the first seed layer.
In the method for manufacturing the protective coating of semiconductor component, the material of the first seed layer is different from the material of the first component protective layer.
In the above-mentioned method for producing a protective coating layer for a semiconductor device, the lattice direction of the surface of the first device protection layer is along the closest packing direction.
In the above-mentioned method for manufacturing the protective coating of semiconductor device, the coefficient of thermal expansion of the first device protective layer is between 6.0x10 < -6 >/DEG C and 8.0x10 < -6 >/DEG C.
In the method for manufacturing the protective coating of semiconductor component, the bending strength of the first component protective layer is greater than 150MPa.
The method for manufacturing a protective coating for a semiconductor device as described above, further comprising the following steps after the step of depositing the first seed layer: and carrying out preheating treatment.
In the above-mentioned method for producing a protective coating for a semiconductor device, the temperature of the preheating treatment is 80 ℃ or more than 80 ℃.
The method for manufacturing the protective coating of semiconductor component described above further comprises the following steps after depositing the first component protective layer: and carrying out temperature holding treatment and temperature reduction treatment.
The above-mentioned method for producing a protective coating for a semiconductor device has a temperature of 80 ℃ or above for the heat treatment.
In the above-mentioned manufacturing method of semiconductor part protective coating, the rate of the temperature reduction treatment is decreased by 5 ℃ per minute or decreased by more than 5 ℃ per minute.
The manufacturing method of the protective coating for semiconductor parts further comprises the following steps after the temperature-keeping treatment and the temperature-reducing treatment are carried out: and (5) tempering treatment is carried out.
The above-mentioned method for manufacturing a protective coating for semiconductor parts has a temperature of 500 ℃ or above for annealing treatment.
Drawings
FIG. 1 is a schematic view of a semiconductor part protective coating 1 and a semiconductor part 8 according to the present embodiment.
FIG. 2 is a schematic view of a semiconductor part protective coating 1 subjected to laser annealing.
Fig. 3 is a schematic diagram illustrating the formation of the textured ceramic layer 14.
FIG. 4 is a schematic view of another embodiment of a semiconductor part protective coating 2 and a semiconductor part 8.
FIG. 5A is a schematic view of a semiconductor part protective coating 3 and a semiconductor part 8 according to still another embodiment.
FIG. 5B is a schematic view of a semiconductor part protective coating 4 and a semiconductor part 8 according to yet another embodiment.
FIG. 6 is a flow chart of the method for manufacturing the protective coating of semiconductor device according to the present invention.
Detailed Description
Referring to fig. 1, fig. 1 is a schematic view of a semiconductor part protective coating 1 and a semiconductor part 8 according to the present embodiment. The semiconductor part protective coating 1 of the present embodiment is applied to a semiconductor part 8, and the semiconductor part protective coating 1 includes a first seed layer 11 having a lattice direction and a first part protective layer 12. Wherein, the material of the first seed layer 11 is, for example, one of oxide, nitride, boride, fluoride or any combination thereof selected from transition metal elements of atomic numbers 39-80 in the periodic table.
In the present embodiment, the first seed layer 11 is deposited on the upper surface of the semiconductor feature 8 using a low deposition rate process, and the semiconductor feature 8 is deposited with at least one layer of the first seed layer 11 having a lattice-packing direction. Specifically, the low deposition rate process is, for example, chemical Vapor Deposition (CVD), physical Vapor Deposition (PVD), molecular Beam Epitaxy (MBE), atomic Layer Deposition (ALD), etc., and the first seed layer 11 is deposited with a thickness of 0.3um to 8um, and the first seed layer 11 has a thermal expansion coefficient of 6.0x 10-6/deg.c to 8.0x 10-6/deg.c and a flexural strength of 150MPa to 400 MPa.
In addition, the material of the first part protection layer 12 is, for example, one or any combination of oxide, nitride, boride and fluoride of transition metal with atomic number 39-80 in the periodic table. It is noted that in other embodiments, the material of the first part protection layer 12 may be different from the material of the first seed layer 11.
In the present embodiment, the first part protection layer 12 is deposited on the upper surface of the first seed layer 11 using a high deposition rate process, such as Vacuum Plasma Spraying (VPS), atmospheric Plasma Spraying (APS), suspension Plasma Spraying (SPS), aerosol Deposition (ADM), etc. It is noted that the first part protection layer 12 using the high deposition rate process and the first seed layer 11 using the low deposition rate process have the same crystallographic orientation. Specifically, the lattice direction of the surface of the first part protection layer 12 is the same as the lattice direction of the surface of the first seed layer 11, and the closest packing directions are formed (222) and (420) in the case of yttrium oxide (Y2O 3) and Yttrium Aluminum Garnet (YAG), so that the thickness of the deposited first part protection layer 12 may be in the range of 60um to 200 um.
In addition, the coefficient of thermal expansion of the first part protective layer 12 is between 6.0x10 < -6 >/DEG C and 8.0x10 < -6 >/DEG C, and the flexural strength of the first part protective layer 12 is 150MPa. If the difference between the expansion coefficients of the first part passivation layer 12 and the first seed layer 11 is too large, the first part passivation layer 12 will crack due to the sharp temperature change during the pre-heat treatment process, the temperature reduction treatment process (described in detail in the following paragraphs), or even during the etching environment, resulting in a decrease in strength of the product or serious defects. In addition, the first seed layer 11 of the present embodiment is used to increase the crystallization rate of the first part protection layer 12 and facilitate the formation of a crystal phase (Texture Grain Structure) with a preferred orientation, so that the first part protection layer 12 reaches a close-packed crystal Structure to improve the plasma erosion resistance, wherein the deposition rate of the first part protection layer 12 is 20 times or more than 20 times the deposition rate of the first seed layer 11, and the thickness of the first part protection layer 12 is 7 times or more than 7 times the thickness of the first seed layer 11. Furthermore, in the preferred embodiment, the thickness of the first part protection layer 12 is more than 15 times of the thickness of the first seed layer 11, so that the processing time of the semiconductor part protection coating 1 can be greatly shortened and a high quality plasma-resistant coating can be manufactured.
Referring to FIG. 2, FIG. 2 is a schematic view of a semiconductor device protective coating 1 processed by laser annealing. The semiconductor part protection coating 1 of this embodiment can improve the performance of the plasma-resistant film layer by laser annealing. In detail, the first part protection layer 12 is laser-irradiated by a laser annealing processor 7, high temperature melting is performed, and the growth in the single lattice direction of the high deposition rate layer (the first part protection layer 12) is triggered by using the low deposition rate layer (the first seed layer 11) as a seed, so as to achieve the textured ceramic layer 14 having the closest packing direction (see fig. 3, fig. 3 is a schematic diagram illustrating the formation of the textured ceramic layer 14). Also, during the simultaneous annealing, the first part protective layer 12 becomes molten to reduce porosity formed by rapid deposition.
Referring to fig. 4, fig. 4 is a schematic view of a semiconductor part protective coating 2 and a semiconductor part 8 according to another embodiment. The semiconductor part protective coating 2 differs from the semiconductor part protective coating 1 in that: the semiconductor component protective coating 2 further comprises an adhesive layer 15, the adhesive layer 15 being located between the first seed layer 11 and the semiconductor component 8. In particular, an adhesion layer 15 with a dense structure is deposited on a semiconductor component 8 (aluminum or a component containing an anodic treatment) at a low deposition rate. The material of the adhesion layer 15 can be selected from one of alumina (Al 2O 3), aluminum nitride (AlN) or aluminum fluoride (AlF 3) or a combination thereof. The function of the adhesive layer 15 is to enhance the adhesion between the subsequent first part protection layer 12 and the semiconductor part 8, the thickness of the deposited adhesive layer 15 can be between 0.1um to 5um, the thermal expansion coefficient of the adhesive layer 15 is between 6.0x10 < -6 >/DEG C to 11.0x10 < -6 >/DEG C, the bending strength of the adhesive layer 15 is between 300MPa to 700MPa, and if the strength is insufficient, the risk of use is caused.
Referring to fig. 5A, fig. 5A is a schematic view of a semiconductor part protective coating 3 and a semiconductor part 8 according to still another embodiment. The semiconductor part protective coating 3 differs from the semiconductor part protective coating 1 in that: the semiconductor part protective coating 3 further comprises a second seed layer 11 'and a second part protective layer 12'. Wherein the second part protection layer 12' is deposited on the upper surface of the second seed layer 11', the thickness of the ceramic layer deposited on the second part protection layer 12' can be between 40um to 60um, the second seed layer 11' is deposited on the upper surface of the first part protection layer 12, and the thickness of the ceramic layer deposited on the second seed layer 11' can be between 0.3um to 3um. Therefore, the semiconductor part protective coating 3 is stacked as two sets of semiconductor part protective coatings 1, and the crystal texture is better. It should be noted that the material of the second part protection layer 12' may be different from the material of the first part protection layer 12, and the lattice directions of the two parts may also be different. Similarly, the material of the first seed layer 11 'can also be different from the material of the first seed layer 11, and the lattice direction of the first seed layer 11' can also be different from the lattice direction of the first seed layer 11. Thus, the strength of the semiconductor part protective coating 3 can be further enhanced.
In the above, the semiconductor part protective coating 3 corresponds to stacking using two sets of the semiconductor part protective coatings 1, the combination of the first seed layer 11 and the first part protective layer 12 can be regarded as a first set, and the combination of the second seed layer 11 and the second part protective layer 12 can be regarded as a second set. However, in other embodiments, the semiconductor part protective coating 3 can also be stacked on top of each other using more groups of semiconductor part protective coatings 1, such as: three or more groups can also strengthen the strength of the whole coating.
FIG. 5B is a schematic view of a semiconductor part protective coating 4 and a semiconductor part 8 according to yet another embodiment. The semiconductor part protective coating 4 differs from the semiconductor part protective coating 3 in that: the protective coating 3 for semiconductor components further comprises an adhesive layer 15', the adhesive layer 15' being located between the first seed layer 11 and the semiconductor component 8. Wherein the material of the adhesion layer 15' can be selected from alumina (Al) 2 O 3 ) Aluminum nitride (AlN) or aluminum fluoride (AlF) 3 ) One or a combination thereof. The adhesive layer 15' also functions to enhance the adhesion of the subsequent first component protective layer 12 to the semiconductor component 8.
In conclusion, the process time of the semiconductor part protective coating of the present invention is shorter, and the manufacturing cost can be reduced. Moreover, the protective coating of the semiconductor part can improve the plasma corrosion resistance of the semiconductor part so as to reduce the pollution of the semiconductor part.
Referring to FIG. 6, FIG. 6 is a flow chart illustrating a method for forming a protective coating for semiconductor devices according to the present invention. The manufacturing method of the protective coating of the semiconductor component comprises the following steps:
first, referring to step S1, a semiconductor part 8 is provided, the semiconductor part 8 is, for example, aluminum or a part containing an anodic treatment.
Thereafter, in step S2, an adhesive layer 15 is deposited on the surface of the semiconductor component 8.
Then, in step S3, a first seed layer 11 is deposited on the surface of the adhesion layer 15. However, in other embodiments, step S2 may be omitted, and the adhesive layer 15 need not be deposited on the surface of the semiconductor component 8. Therefore, the first seed layer 11 is deposited on the surface of the semiconductor component 8. Moreover, the surface of the first seed layer 11 has a lattice orientation.
Then, please refer to step S4, a preheating process is performed, wherein the temperature of the preheating process can be 80 ℃ or above 80 ℃, and preferably above 100 ℃.
Thereafter, referring to step S5, a first part protection layer 12 is deposited on the surface of the first seed layer 11, such that the lattice direction of the surface of the first part protection layer 12 is the same as the lattice direction of the surface of the first seed layer 11. It is noted that the thickness of the first part protection layer 12 is 7 times or more than 7 times the thickness of the first seed layer 11.
Then, please refer to step S6, performing a temperature maintaining process and a temperature reducing process. Wherein the temperature of the heat treatment can be 80 ℃ or above 80 ℃, preferably 100 ℃ or above 100 ℃, and the upper limit is 300 ℃. The heat preservation time is more than 1 minute. In addition, the rate of the temperature reduction treatment is reduced by 5 ℃ per minute or is reduced by less than 5 ℃ per minute, and the crystallization effect is better when the temperature reduction rate is slower.
Then, please refer to step S7, a tempering process is performed at a temperature of 500 ℃ or above 500 ℃. Specifically, the subsequent heat treatment process (annealing process) is performed to improve the crystal orientation and plasma resistance of the film, such as laser annealing: the sintering effect is formed by melting the plasma-resistant layer at a high temperature, and the first seed layer 11 (intermediate layer) is used as a seed crystal to trigger the growth of ceramic in a single lattice direction, preferably a textured ceramic layer with the closest packing direction of its crystal direction. The laser power of the laser annealing is between 10W and 100W, so as to keep the surface temperature of the thin film at 500 ℃ or above 500 ℃, if the laser power is too low, the effect is not improved, if the laser power is too high, the film layer may be cracked, and the surface roughness of the first part protection layer 12 after the laser annealing is between 3um and 6um.
As mentioned above, the present invention can produce a plasma-resistant layer with a certain crystal orientation at a lower cost, thereby increasing the plasma resistance in a plasma environment.

Claims (26)

1. A protective coating for a semiconductor component, applied to a semiconductor component, the protective coating for a semiconductor component, comprising:
a first seed layer deposited on the surface of the semiconductor component; and
a first part protection layer deposited on the surface of the first seed layer such that the lattice orientation of the surface of the first part protection layer is the same as the lattice orientation of the surface of the first seed layer;
wherein the thickness of the first part protection layer is 7 times or more than 7 times the thickness of the first seed layer.
2. A protective coating for a semiconductor component, applied to a semiconductor component, the protective coating for a semiconductor component comprising:
a first seed layer deposited on the surface of the semiconductor component;
an adhesive layer between the first seed layer and the semiconductor component; and
a first part protection layer deposited on the surface of the first seed layer such that the lattice orientation of the surface of the first part protection layer is the same as the lattice orientation of the surface of the first seed layer;
wherein the thickness of the first part protection layer is 7 times or more than 7 times the thickness of the first seed layer.
3. The protective coating for semiconductor parts according to claim 1 or claim 2, further comprising:
at least one second seed layer deposited on the surface of the first part protection layer; and
at least one second part protection layer deposited on the surface of the second seed layer such that the lattice orientation of the surface of the second part protection layer is the same as the lattice orientation of the surface of the second seed layer.
4. The protective coating for semiconductor components of claim 3, wherein a lattice orientation of a surface of said second seed layer is different from a lattice orientation of a surface of said first seed layer.
5. The semiconductor part protective coating of claim 3, wherein a lattice orientation of a surface of the second part protective layer is different from a lattice orientation of a surface of the first part protective layer.
6. The semiconductor part protective coating of claim 1 or claim 2, wherein the deposition rate of the first part protective layer is 20 times or more than 20 times the deposition rate of the first seed layer.
7. The protective coating for semiconductor parts according to claim 1 or claim 2, wherein the first seed layer is selected from one of an oxide, a nitride, a boride, a fluoride of a transition metal element of atomic 39-80 of the periodic table, or any combination thereof.
8. The protective coating for semiconductor parts according to claim 1 or claim 2, wherein the first part protective layer is selected from one of oxides, nitrides, borides, fluorides of transition metal elements of atomic numbers 39-80 of the periodic table, or any combination thereof.
9. The half-woven fabric sample frame according to claim 1 or claim 2, wherein the frame portion comprises a edge portion of the frame portion, wherein the edge of the first sample frame is different from the edge of the frame portion.
10. The semiconductor part protective coating of claim 1 or claim 2, wherein a lattice direction of a surface of the first part protective layer is along a closest packing direction.
11. The protective coating for semiconductor parts according to claim 1 or claim 2, wherein the first part protective layer has a coefficient of thermal expansion of 6.0x10 -6 From/° C to 8.0x10 -6 Between/° c.
12. The protective coating for semiconductor parts according to claim 1 or claim 2, wherein the first part protective layer has a flexural strength of more than 150MPa.
13. The protective coating for semiconductor parts according to claim 2, wherein the material of the adhesion layer is selected from the group consisting of aluminum oxide (Al) 2 O 3 ) Aluminum nitride (AlN) and aluminum fluoride (AlF) 3 ) One or any combination thereof.
14. A method for producing a protective coating for a semiconductor component, comprising:
(a1) Depositing a first seed crystal layer on the surface of a semiconductor part; and
(b1) Depositing a first part protection layer on the surface of the first seed layer such that the lattice orientation of the surface of the first part protection layer is the same as the lattice orientation of the surface of the first seed layer;
wherein the thickness of the first part protection layer is 7 times or more than 7 times the thickness of the first seed layer.
15. The method of claim 14, wherein the deposition rate of the first feature protection layer is 20 times or more than 20 times the deposition rate of the first seed layer.
16. The method of claim 14, wherein the first seed layer is made of a material different from that of the first part passivation layer.
17. The method of manufacturing a protective coating for semiconductor parts according to claim 14, wherein a lattice direction of a surface of the first part protective layer is along a closest packing direction.
18. The method of claim 14, wherein the first part protection layer has a thermal expansion coefficient of 6.0x10 -6 From/° C to 8.0x10 -6 Between/° c.
19. The method of claim 14, wherein the first part protective layer has a flexural strength greater than 150MPa.
20. The method for producing a protective coating for semiconductor parts according to claim 14, further comprising, after the step (a 1): (a 2) performing a preheating treatment.
21. The method of claim 20, wherein the temperature of the pre-heat treatment is 80 ℃ or more than 80 ℃.
22. The method for producing a protective coating for semiconductor parts according to claim 14, further comprising, after the step (b 1): and (b 2) carrying out temperature maintaining treatment and temperature reducing treatment.
23. The method for producing a protective coating for semiconductor parts according to claim 22, wherein the temperature of the temperature-holding treatment is 80 ℃ or more.
24. The method according to claim 22, wherein the temperature-reducing process is performed at a rate of 5 ℃ per minute or less than 5 ℃ per minute.
25. The method of manufacturing a protective coating for a semiconductor part according to claim 22, further comprising, after the step (b 2): (b 3) tempering.
26. The method of claim 25, wherein the annealing temperature is 500 ℃ or above 500 ℃.
CN202110433334.8A 2021-04-21 2021-04-22 Protective coating for semiconductor parts and method for producing same Pending CN115223833A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW110114359 2021-04-21
TW110114359A TWI762279B (en) 2021-04-21 2021-04-21 Semiconductor part protective coating and method of fabricating the same

Publications (1)

Publication Number Publication Date
CN115223833A true CN115223833A (en) 2022-10-21

Family

ID=82199038

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110433334.8A Pending CN115223833A (en) 2021-04-21 2021-04-22 Protective coating for semiconductor parts and method for producing same

Country Status (2)

Country Link
CN (1) CN115223833A (en)
TW (1) TWI762279B (en)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW582092B (en) * 2003-01-29 2004-04-01 United Microelectronics Corp Damascene interconnect with bilayer capping film
TWI224387B (en) * 2003-08-13 2004-11-21 Phoenix Prec Technology Corp Semiconductor package substrate with protective layer on pads formed thereon and method for fabricating the same
US7767496B2 (en) * 2007-12-14 2010-08-03 Stats Chippac, Ltd. Semiconductor device and method of forming interconnect structure for encapsulated die having pre-applied protective layer
US9735308B2 (en) * 2014-09-18 2017-08-15 Sunpower Corporation Foil-based metallization of solar cells using removable protection layer
KR20160137746A (en) * 2015-05-20 2016-12-01 삼성전자주식회사 apparatus for manufacturing a substrate and carbon protection film coating method of the same
US20160372413A1 (en) * 2015-06-17 2016-12-22 Globalfoundries Inc. Unique bi-layer etch stop to protect conductive structures during a metal hard mask removal process and methods of using same
US9570295B1 (en) * 2016-01-29 2017-02-14 International Business Machines Corporation Protective capping layer for spalled gallium nitride
US10020260B1 (en) * 2016-12-22 2018-07-10 Globalfoundries Inc. Corrosion and/or etch protection layer for contacts and interconnect metallization integration
US20220208604A1 (en) * 2019-05-01 2022-06-30 Lam Research Corporation Protection of seed layers during electrodeposition of metals in semiconductor device manufacturing
US11302820B2 (en) * 2019-09-27 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Localized protection layer for laser annealing process

Also Published As

Publication number Publication date
TW202243149A (en) 2022-11-01
TWI762279B (en) 2022-04-21

Similar Documents

Publication Publication Date Title
US20230141782A1 (en) Protective metal oxy-fluoride coatings
TWI744898B (en) Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas
US8017062B2 (en) Semiconductor processing components and semiconductor processing utilizing same
JP4643478B2 (en) Manufacturing method of ceramic covering member for semiconductor processing equipment
US7968205B2 (en) Corrosion resistant multilayer member
JP4606121B2 (en) Corrosion-resistant film laminated corrosion-resistant member and manufacturing method thereof
KR101491437B1 (en) Coating semiconductor processing apparatus with protective yttrium-containing coatings which reduce arcing and corrosion within a processing chamber
KR100939403B1 (en) Ceramic Coating Member for Semiconductor Processing Apparatus
KR101226120B1 (en) Corrosion resistance member, and method for manufacturing the same
JP2013063904A (en) Plasma-resistant ceramics with controlled electrical resistivity
US20030134134A1 (en) Method for forming ceramic layer having garnet crystal structure phase and article made thereby
TWI775757B (en) Sprayed member, and method for producing yttrium oxyfluoride-containing sprayed coating
JP4512603B2 (en) Halogen gas resistant semiconductor processing equipment components
KR101101910B1 (en) Multi-component ceramic coating material for thermal spray on the parts of semiconductor processing devices and fabrication method and coating method thereof
JP2005097685A (en) Corrosion resistant member and manufacturing method therefor
CN215183847U (en) Protective coating for semiconductor parts
CN115223833A (en) Protective coating for semiconductor parts and method for producing same
CN215183849U (en) Protective layer resistant to plasma corrosion
JP2020050536A (en) Alumina sintered body
CN115558988B (en) Method for forming coating, semiconductor component and plasma reaction device
KR102535560B1 (en) Method for Producing Plasma-Resistant Coating Layer
US20230051800A1 (en) Methods and apparatus for plasma spraying silicon carbide coatings for semiconductor chamber applications
JP2023145143A (en) Member for plasma processing device
CN115223835A (en) Plasma corrosion resistant protective layer and method for forming the same

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination