USRE47195E1 - Copper foil for producing graphene and method of producing graphene using the same - Google Patents

Copper foil for producing graphene and method of producing graphene using the same Download PDF

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USRE47195E1
USRE47195E1 US15/432,383 US201215432383A USRE47195E US RE47195 E1 USRE47195 E1 US RE47195E1 US 201215432383 A US201215432383 A US 201215432383A US RE47195 E USRE47195 E US RE47195E
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copper foil
graphene
producing graphene
rolled copper
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Yoshihiro Chiba
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JX Nippon Mining and Metals Corp
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/02—Alloys based on copper with tin as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/02—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21B—ROLLING OF METAL
    • B21B1/00—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations
    • B21B1/40—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling foils which present special problems, e.g. because of thinness
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21B—ROLLING OF METAL
    • B21B3/00—Rolling materials of special alloys so far as the composition of the alloy requires or permits special rolling methods or sequences ; Rolling of aluminium, copper, zinc or other non-ferrous metals
    • B21B2003/005—Copper or its alloys
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12431—Foil or filament smaller than 6 mils

Definitions

  • the present invention relates to a copper foil base for producing graphene, and a method of producing graphene using the same.
  • Graphite has a layered structure where a plurality of layers of carbon six-membered rings planarly arranged is laminated.
  • the graphite having a mono atomic layer or around several atomic layers is called as graphene or a graphene sheet.
  • the graphene sheet has own electrical, optical and mechanical properties, and in particularly has a high carrier mobility speed. Therefore, the graphene sheet has expected to be applied in various industries as a fuel cell separator, a transparent electrode, a conductive thin film for a display device, a “mercury-free” fluorescent lamp, a composite material, a carrier for Drug Delivery System (DDS) etc.
  • DDS Drug Delivery System
  • a technology has been developed that a sheet-like monocrystal graphitized metal catalyst is contacted with a carboneous substance and then is heat treated to grow the graphene sheet (Chemical Vapor Deposition (CVD) method) (Patent Literature 1).
  • CVD Chemical Vapor Deposition
  • the monocrystal graphitized metal catalyst there is described a metal substrate made of Ni, Cu or W, for example.
  • Non-Patent Literature 1 a technology has been reported that a graphene film is formed by the chemical vapor deposition method on a copper layer formed on an Ni or Cu metal foil or an Si substrate.
  • the graphene film is formed at about 1000° C.
  • Patent Literature 1 Japanese Unexamined Patent Publication (Kokai) 2009-143799
  • Non-Patent Literature 1 SCIENCE Vol. 324 (2009) P1312-1314
  • Non-Patent Document 1 describes that Cu is used as the substrate. Graphene is not grown on a copper foil in a plane direction within a short time. A Cu layer formed on an Si substrate is annealed to provide coarse grains, thereby providing a substrate. In this case, a size of graphene is limited to the size of the Si substrate, and its production costs are high, too.
  • an object of the present invention is to provide a copper foil for producing graphene being capable of producing graphene having a large area with low costs, and a method of producing graphene using the same.
  • a first aspect of the present invention provides a copper foil for producing graphene, having 60 degree gloss of 500% or more in a rolling direction and a direction transverse to the rolling direction, and an average crystal grain size of 200 ⁇ m or more after heating at 1000° C. for 1 hour in an atmosphere containing 20% by volume or more of hydrogen and balance argon.
  • the average crystal grain size is 400 ⁇ m or more. More preferably, the average crystal grain size is 900 ⁇ m or more. Preferably, a superficial arithmetic mean roughness Ra is 0.05 ⁇ m or less.
  • a second aspect of the present invention provides a copper foil for producing graphene, having a superficial arithmetic mean roughness Ra is 0.05 ⁇ m or less.
  • the arithmetic mean roughness Ra is 0.03 ⁇ m or less.
  • the copper foil for producing graphene of the present invention consists of tough pitch copper in accordance with JIS-H3100-2000 or JIS-H3250-2000; or consists of oxygen free copper in accordance with JIS-H3100-2000 or JIS-H3510-1992, or contains 0.050% by mass or less of one or more of elements selected from the group consisting of Sn and Ag to the tough pitch copper or the oxygen free copper.
  • the present invention provides a method of producing grapheme graphene using the copper foil for producing graphene according to any one of Claims 1 to 7 the present invention, comprising the steps of: providing a carbon-containing gas while placing the heated copper foil to form graphene on a surface of the copper foil for producing graphene; laminating a transfer sheet on the surface of the graphene, and etching and removing the copper foil for producing graphene while transferring the graphene to the transfer sheet.
  • a copper foil being capable of producing graphene having a large area with low costs.
  • FIG. 1 A process chart showing a method of producing graphene according to an embodiment of the present invention.
  • TPC tough pitch copper
  • OF oxygen free copper
  • the tough pitch copper or the oxygen free copper a composition containing 0.050% by mass or less of one or more of elements selected from the group consisting of Sn and Ag can be used.
  • the copper foil can have improved strength and adequate elongation, and the grain size can be increased. If a content percentage of the above-described elements exceeds 0.050% by mass, the strength may be further increased, but the elongation may be decreased to degrade workability and suppress the growth of the grain size. More preferably, the content percentage of the above-described elements is 0.040% by mass or less.
  • a lower limit of the content percentage of the above-described elements is not especially limited, the lower limit may be 0.005% by mass, for example. If the content percentage of the above-described elements is less than 0.005% by mass, the content percentage may be difficult to be controlled.
  • the thickness of the copper foil for producing graphene is not especially limited, but is generally 5 to 150 ⁇ m.
  • the thickness of the copper foil is 12 to 50 ⁇ m for ease of etching and removal as described later while assuring handleability. If the thickness of the copper foil for producing graphene is less than 12 ⁇ m, it may be easily broken and have less handleability. If the thickness exceeds 50 ⁇ m, etching and removal may be difficult.
  • 60 degree gloss (JIS Z8741-1997) of the copper foil for producing graphene is 500% or more both in a rolling direction and a direction transverse to rolling direction.
  • the graphene is needed to be transferred from the copper foil to a transfer sheet. It is found that when a surface of the copper foil is rough, it is difficult to transfer the graphene, and the graphene is broken. As an indicator for representing a surface irregularity of the copper foil, 60 degree gloss is specified.
  • the graphene is broken upon the transfer.
  • An upper limit of the 60 degree gloss in a rolling direction or a direction transverse to rolling direction is not especially limited, but about 800% is practically the upper limit.
  • the surface of the copper foil for producing graphene has an arithmetic mean roughness Ra in accordance with JIS B0601-1994 of preferably 0.05 ⁇ m or less, and more preferably 0.03 ⁇ m or less.
  • a lower limit of the Ra is not needed to be especially limited, it is considered that the lower limit value of the Ra on the surface of the copper foil that can be produced is about 0.01 ⁇ m.
  • an average crystal grain size thereof is 200 ⁇ m or more.
  • the average crystal grain size of the cooper foil for producing graphene is less than 200 ⁇ m, it makes an obstacle for growth of the graphene on the surface of the copper foil for producing graphene, and the graphene is difficult to be grown in a planar direction. It may because a crystal grain boundary makes the obstacle for the growth of the graphene.
  • the average crystal grain size of the copper foil for producing graphene is preferably 900 ⁇ m or more.
  • the heating at 1000° C. for 1 hour in an atmosphere containing 20% by volume or more of hydrogen and balance argon is simulated for a condition of heating the copper foil for producing graphene at a decomposition temperature of the carbon-containing gas or more, when graphene is produced.
  • the average crystal grain size is determined by measuring the copper foil for producing graphene with a cutting method by JIS H0501-1986.
  • the large-area graphene can be produced at low costs and a high yield.
  • the copper foil for producing graphene according to the embodiment of the present invention can be produced as follows, for example: Firstly, a copper ingot having a predetermined composition is produced, is hot rolled, and is annealed and cold rolled repeatedly to provide a rolled sheet. The rolled sheet is annealed to be re-crystallized, and finally cold rolled to the predetermined thickness of a rolling reduction of 80 to 99.9% (preferably 85 to 99.9%, more preferably 90 to 99.9%), thereby providing a copper foil.
  • an oil film equivalent will be 18000 or less both at a final pass of the final cold rolling and a previous pass before the final pass of the final cold rolling.
  • a rolled copper foil is generally processed at high speed with oil lubrication.
  • shear band deformation is prone to be dominant. This is a common phenomenon which applies to typical metals.
  • the shear band is not necessarily preferable to the growth of the crystal grains when annealed. High and low or shallow and deep of the shear band can be presented by the gloss on the surface of the copper foil.
  • an oil pit is generated on a rolling processed surface when the oil film that is introduced between the roll and the material is thick.
  • an area that is contacted with the rolling roll on the surface of the material is increased.
  • the oil film equivalent is limited to 18000 or less. If the oil film equivalent exceeds 18000, the 60 degree gloss on the surface of the copper foil is less than 500%.
  • the rolling oil viscosity (kinetic viscosity at 40° C.) is low, the rolling speed is low, and the roll angle of bite (corresponding to a rolling reduction) is high.
  • a rolling roll adjusted to have a roll diameter of 250 mm or less and surface roughness Ra roll of 0.1 ⁇ m or less (preferably 0.01 to 0.04 ⁇ m, more preferably 0.01 to 0.02 ⁇ m)
  • rolling oil having a viscosity of 3 to 8 cSt preferably 3 to 5 cSt, more preferably 3 to 4 cSt is used.
  • a rolling speed may be 100 to 500 m/min (preferably 200 to 450 m/min, more preferably 250 to 400 m/min), and the rolling reduction per pass may be 10 to 60%.
  • the roll angle of bite is, for example, 0.001 to 0.04 rad, preferably 0.002 to 0.03 rad, more preferably 0.003 to 0.03 rad.
  • the surface roughness Ra roll of the rolling roll exceeds 0.1 ⁇ m, the irregularity of the roll surface is transferred and smoothness of the material surface is impaired.
  • a surface flatness having no oil pit can have a wide area.
  • the viscosity of the rolling oil exceeds 8 cSt, the oil film equivalent is increased, thereby providing no surface gloss.
  • the oil film equivalent is less than 3 cSt, rolling resistance is too increased to increase the rolling reduction.
  • the rolling speed exceeds 500 m/min, the oil amount introduced is increased, thereby decreasing the gloss.
  • the rolling speed is less than 100 m/min, the rolling reduction is not sufficiently provided and it is inconvenience from the standpoint of the productivity.
  • the rolling reduction exceeds 99.9%, work hardening is accelerated to lose deformation capability, and the rolling reduction in the last pass is not ensured.
  • the rolling reduction is less than 80%, a rolling texture is not grown, thereby providing no surface flatness.
  • the roll angle of bite exceeds 0.04 rad, a difference between a roll peripheral speed and a material speed becomes great to lose the smoothness of the material surface.
  • the roll angle of bite is less than 0.002 rad, the oil enters between the rolling roll and the material to be rolled and the amount of the oil is too great to lubricate, thereby decreasing the gloss.
  • the rolling reduction per pass is, for example, 20 to 40%, preferably 20 to 35%, more preferably 25 to 35%. If the rolling reduction exceeds 35%, the shear band is grown to produce the oil pit, thereby decreasing the gloss. On the other hand, if the rolling reduction is less than 20%, the number of passes increases to degrade the productivity.
  • a material temperature is increased during the final cold rolling.
  • the material temperature has no sense when oil lubricity is lost or the copper foil is re-crystallized, and may be 120° C. or less, preferably 100° C. or less. If the material temperature is 50° C. or less, there is almost no effect to prevent the shear band deformation.
  • the 60 degree gloss of the copper foil for producing graphene it is possible to control the 60 degree gloss of the copper foil for producing graphene to 500% or more.
  • the 60 degree gloss of the copper foil is 500% or more, it is found that the crystal grain size after annealing is 200 ⁇ m or more. This may be because the crystal growth after annealing is promoted by controlling the oil film equivalent or the material temperature during the final cold rolling to resist the shear band deformation as described above.
  • Controlling the 60 degree gloss of the copper foil for producing graphene to 500% or more is not limited to the above-described methods.
  • the above-described copper foil 10 for producing graphene of the present invention is placed in a chamber (such as a vacuum chamber) 100 and is heated by a heater 104 .
  • a carbon-containing gas G is fed to the chamber 100 through a gas supply inlet 102 ( FIG. 2(a) ).
  • the carbon-containing gas G carbon dioxide, carbon monoxide, methane, ethane, propane, ethylene, acetylene, alcohol or the like is cited, but is not limited thereto.
  • One or more of these gases may be mixed.
  • the copper foil 10 for producing graphene may be heated at a decomposition temperature of the carbon-containing gas G or more.
  • the temperature can be 1000° C. or more.
  • the carbon-containing gas G may be heated at the decomposition temperature or more within the chamber 100 , and the decomposed gas may bring into contact with the copper foil 10 for producing graphene.
  • the decomposition gas forms graphene 20 on the surface of the copper foil 10 for producing graphene ( FIG. 2(b) ).
  • the copper foil 10 for producing graphene is cooled to normal temperature, a transfer sheet 30 is laminated on the surface of the graphene 20 , and the graphene 20 is transferred to the transfer sheet 30 .
  • the laminate is continuously immersed into an etching tank 110 via a sink roll 120 , and the copper foil 10 for producing graphene is removed by etching ( FIG. 2 (c)). In this way, the graphene 20 laminated on the predetermined transfer sheet 30 can be produced.
  • the laminate from which the copper foil 10 for producing graphene is removed is pulled up, and a substrate 40 is laminated on the graphene 20 . While the graphene 20 is transferred to the substrate 40 , the transfer sheet 30 is removed, whereby the graphene 20 laminated on the substrate 40 can be produced.
  • the transfer sheet 30 a variety of resin sheets (a polymer sheet such as polyethylene, polyurethane etc.) can be used.
  • a sulfuric acid solution, a sodium persulfate solution, a hydrogen peroxide and sodium persulfate solution, or a solution where sulfuric acid is added to hydrogen peroxide can be, for example, used.
  • an Si, SiC, Ni or Ni alloy can be, for example, used.
  • a cooper ingot having a composition shown in Table 1 was prepared, was hot rolled at 800 to 900° C., and was annealed in a continuous annealing line at 300 to 700° C. and cold rolled, which was repeated one time, to provide a rolled sheet having a thickness of 1 to 2 mm.
  • the rolled sheet was annealed and re-crystallized in the continuous annealing line at 600 to 800° C., and was finally cold rolled to a thickness of 7 to 50 ⁇ m of a rolling reduction of 95 to 99.7% to provide each copper foil in Examples 1 to 15 and Comparative Examples 1 to 9.
  • oil film equivalents were adjusted to the values shown in Table 1 both at a final pass of the final cold rolling and a previous pass before the final pass of the final cold rolling.
  • the copper foils in Examples 1 to 15 and Comparative Examples 1 to 9 were final cold rolled and were heated at 1000° C. for 1 hour in an atmosphere containing 20% by volume or more of hydrogen and balance argon. Thereafter, the 60 degree gross on each surface was measured.
  • the 60 degree gross was measured using a gloss meter in accordance with JIS-Z8741-1997 (trade name “PG-1M” manufactured by Nippon Denshoku Industries Co., Ltd.)
  • the copper foils in Examples 1 to 15 and Comparative Examples 1 to 9 were final cold rolled and were heated at 1000° C. for 1 hour in an atmosphere containing 20% by volume or more of hydrogen and balance argon. Thereafter, the surface roughness of each was measured.
  • a contact roughness meter (trade name “SE-3400” manufactured by Kosaka Laboratory Ltd.) was used to measure an arithmetic mean roughness (Ra; ⁇ m) in accordance with JIS-B0601-1994 was measured.
  • Ra arithmetic mean roughness
  • a mean distance of the irregularities As to a mean distance of the irregularities (Sm; mm), under the conditions of a measurement sampling length of 0.8 mm, an evaluation length of 4 mm, a cut off value of 0.8 mm and a feed rate of 0.1 mm/sec, ten measurements were done in parallel with a rolling direction at different measurement positions, and values for ten measurements were determined in each direction.
  • the Sm is defined as “Mean width of the profile elements” by JIS B0601-2001 (in accordance with ISO4287-1997) that represents a surface texture by a profile curve method, and refers to an average of profile lengths of respective irregularities in a sampling length.
  • the copper foil (horizontal and vertical 100 ⁇ 100 mm) in each Example was placed in a vacuum chamber, and heated at 1000° C. Under vacuum (pressure: 0.2 Torr), methane gas was fed into the vacuum chamber (fed gas flow rate: 10 to 100 cc/min), the copper foil was heated to 1000° C. for 30 minutes and held for 1 hour to grow graphene on the surface of the copper foil.
  • Table 1 shows the obtained result.
  • G60 RD and G60 TD represent 60 degree gloss in a rolling direction and a direction transverse to rolling direction, respectively.
  • GS shows the average crystal grain size.
  • TPC in Examples 1 to 7, 14 and 15 and Comparative Examples 1 to 3, 7 and 9 represents tough pitch copper in accordance with JIS-H3100-2000.
  • OFC in Examples 9 to 12 and Comparative Examples 4 to 6 and 8 represents oxygen free copper in accordance with JIS-H3100-2000.
  • TPC in Example 13 represents tough pitch copper in accordance with JIS-H3250-2000.
  • OFC in Example 8 represents oxygen free copper in accordance with JIS-H3510-1992.

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  • Organic Chemistry (AREA)
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  • Metallurgy (AREA)
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PCT/JP2012/053945 WO2012111840A1 (ja) 2011-02-18 2012-02-20 グラフェン製造用銅箔及びそれを用いたグラフェンの製造方法
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JP5822669B2 (ja) 2011-02-18 2015-11-24 Jx日鉱日石金属株式会社 グラフェン製造用銅箔及びそれを用いたグラフェンの製造方法
EP2716601B1 (en) 2011-06-02 2017-03-15 JX Nippon Mining & Metals Corporation Copper foil for manufacturing graphene and graphene manufacturing method
JP5850720B2 (ja) 2011-06-02 2016-02-03 Jx日鉱日石金属株式会社 グラフェン製造用銅箔、及びグラフェンの製造方法
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US20140216650A1 (en) 2014-08-07
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EP2664580B1 (en) 2017-06-14

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