US8502285B2 - Thin-film transistor and intermediate of thin-film transistor - Google Patents

Thin-film transistor and intermediate of thin-film transistor Download PDF

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US8502285B2
US8502285B2 US12/737,797 US73779709A US8502285B2 US 8502285 B2 US8502285 B2 US 8502285B2 US 73779709 A US73779709 A US 73779709A US 8502285 B2 US8502285 B2 US 8502285B2
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film
copper alloy
oxygen
mol
thin
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US20110133190A1 (en
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Satoru Mori
Shozo Komiyama
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Mitsubishi Materials Corp
Ulvac Inc
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Mitsubishi Materials Corp
Ulvac Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate

Definitions

  • the present invention relates to a thin-film transistor used in various kinds of displays and a thin-film transistor intermediate (an intermediate of a thin-film transistor) for manufacturing the transistor. More particularly, the present invention relates to a thin-film transistor and a thin-film transistor intermediate including a drain electrode and a source electrode with high adhesion.
  • Liquid crystal displays, plasma displays, organic EL displays, and inorganic EL displays have been known as flat panel displays in which thin-film transistors are used that are driven by an active matrix scheme.
  • lines consisting of metal films closely adhere to the surface of a glass substrate in a lattice shape, and the thin-film transistors are provided at the intersection points of the lattice-shaped lines consisting of metal film.
  • the thin-film transistor includes a gate electrode film 2 which consists of a pure copper film formed on the surface of a glass substrate 1 , a silicon nitride (SiN x ) film 3 formed on the gate electrode film 2 and the glass substrate 1 , an n ⁇ amorphous Si semiconductor film 4 formed on the silicon nitride (SiN x ) film 3 , an n + amorphous Si ohmic film 4 ′ formed on the n ⁇ amorphous Si semiconductor film 4 , and a drain electrode film 5 and a source electrode film 6 which consists of pure copper and are formed on the n + amorphous Si ohmic film 4 ′.
  • a gate electrode film 2 which consists of a pure copper film formed on the surface of a glass substrate 1
  • a silicon nitride (SiN x ) film 3 formed on the gate electrode film 2 and the glass substrate 1
  • an n ⁇ amorphous Si semiconductor film 4 formed on the silicon
  • the thin-film transistor having the layer structure is manufactured as follows. First, as shown in a cross-sectional view of FIG. 6 , the gate electrode film 2 consisting of pure copper is formed on the surface of the glass substrate 1 , and the silicon nitride (SiN x ) film 3 is formed on the gate electrode film 2 and the glass substrate 1 . Then, the n ⁇ amorphous Si semiconductor film 4 is formed on the silicon nitride (SiN x ) film 3 , and the n + amorphous Si ohmic film 4 ′ is formed on the n ⁇ amorphous Si semiconductor film 4 . Thereafter, a pure copper film 8 is formed so as to cover the entire surface of the n + amorphous Si ohmic film 4 ′. In this way, a laminate 9 is manufactured.
  • a technique has been known in which a hydrogen plasma treatment is performed on the surface of the n ⁇ amorphous Si semiconductor film 4 which is exposed through the isolation trench 7 , and dangling-bonds on the surface of the n ⁇ amorphous Si semiconductor film 4 are combined with hydrogen atoms by the hydrogen plasma treatment so as to stabilize the n ⁇ amorphous Si semiconductor film; and thereby, a leakage current is reduced.
  • the hydrogen plasma treatment is preferably performed under conditions where a 100% hydrogen gas is used, a hydrogen gas flow rate is in a range of 10 SCCM to 1000 SCCM, a hydrogen gas pressure is in a range of 10 Pa to 500 Pa, an RF current density is in a range of 0.005 W/cm 2 to 0.5 W/cm 2 , and a process time is in a range of 1 minute to 60 minutes (see Patent Document 1).
  • a pure copper film is used as the drain electrode film 5 and the source electrode film 6 .
  • the pure copper film has low adhesion to a ceramic substrate made of glass, alumina, or silicon dioxide.
  • a technique has been known in which a copper film including oxygen is formed as an underlayer on the surface of the ceramic substrate, and a pure copper film is formed on the underlayer, which is the copper film including oxygen; and thereby, a composite copper film is obtained (see Patent Document 3).
  • the composite copper film the copper film including oxygen comes into contact with the ceramic substrate. In this way, it is possible to improve the adhesion to the ceramic substrate.
  • the thin-film transistor in a process of manufacturing the thin-film transistor, it is required to conduct the hydrogen plasma treatment process for combining dangling-bonds on the surface of the n ⁇ amorphous Si semiconductor film 4 with hydrogen atoms so as to stabilize the n ⁇ amorphous Si semiconductor film.
  • the hydrogen plasma treatment is performed, the adhesion of the drain electrode film and the source electrode film consisting of pure copper films, to the n + amorphous Si ohmic film 4 ′ is reduced.
  • the present invention aims to provide a thin-film transistor and an intermediate of a thin-film transistor including a drain electrode and a source electrode with high adhesion.
  • the inventors conducted a study on a technique capable of manufacturing an intermediate of a thin-film transistor including a drain electrode film and a source electrode film with high adhesion, manufacturing a thin-film transistor including a drain electrode film and a source electrode film with high adhesion by using the intermediate of a thin-film transistor. As a result, the inventors obtained the following study results.
  • a silicon oxide (SiO x ) film can be used as the barrier film to further improve the adhesion of the drain electrode film and the source electrode film, which is preferable.
  • a gate electrode film 2 is formed on a glass substrate 1 , and a silicon nitride film 3 is formed on the glass substrate 1 and the gate electrode film 2 . Then, an n ⁇ amorphous Si semiconductor film 4 is formed on the silicon nitride film 3 , and an n + amorphous Si ohmic film 4 ′ is formed on the n ⁇ amorphous Si semiconductor film 4 . Thereafter, a barrier film 11 including a silicon oxide (SiO x ) film is formed on the n + amorphous Si ohmic film 4 ′.
  • a copper alloy underlayer containing oxygen and calcium 112 is formed on the barrier film 11 including the silicon oxide (SiO x ) film, and a Cu layer 113 is formed on the copper alloy underlayer containing oxygen and calcium 112 .
  • a composite copper alloy film 114 includes the copper alloy underlayer containing oxygen and calcium 112 and the Cu layer 113 .
  • the copper alloy underlayer containing oxygen and calcium 112 has a component composition including 0.01 mol % to 10 mol % of Ca, 1 mol % to 20 mol % of oxygen, and as the remainder, Cu and inevitable impurities. In this way, a laminate 109 is manufactured.
  • wet etching is performed on a portion of the composite copper alloy film 114 immediately above the gate electrode 2 , and plasma etching is performed on the barrier film 11 including the silicon oxide film, and the n + amorphous Si ohmic film 4 ′. Thereby, an isolation trench 7 is formed, and the n ⁇ amorphous Si semiconductor film 4 is exposed; and as a result, the drain electrode film 5 and the source electrode film 6 are formed. In this way, it is possible to manufacture the intermediate of a thin-film transistor 110 according to the first aspect shown in the cross-sectional view of FIG. 1 .
  • a concentrated layer having high concentrations of Ca and oxygen is formed in the copper alloy underlayer containing oxygen and calcium 112 .
  • the concentrated layer has a component composition including 2 mol % to 30 mol % of Ca, 20 mol % to 50 mol % of oxygen, and as the remainder, Cu and inevitable impurities.
  • the copper alloy underlayer containing oxygen and calcium 112 is changed to a copper alloy underlayer containing an oxygen-calcium concentrated layer (not shown) including the concentrated layer, and a composite copper alloy film including the copper alloy underlayer containing an oxygen-calcium concentrated layer and a Cu layer is generated. Since the drain electrode film and the source electrode film each have the composite copper alloy film including the copper alloy underlayer containing an oxygen-calcium concentrated layer and the Cu layer, the adhesion of the drain electrode film and the source electrode film to the barrier film 11 is significantly improved.
  • a silicon oxide (SiO x ) film can be used as the barrier film to further improve the adhesion of the drain electrode film and the source electrode film, which is preferable.
  • a gate electrode film 2 is formed on a glass substrate 1 , and a silicon nitride film 3 is formed on the glass substrate 1 and the gate electrode film 2 . Then, an n ⁇ amorphous Si semiconductor film 4 is formed on the silicon nitride film 3 , and an n + amorphous Si ohmic film 4 ′ is formed on the n ⁇ amorphous Si semiconductor film 4 . Thereafter, a barrier film 11 including a silicon oxide (SiO x ) film is formed on the n + amorphous Si ohmic film 4 ′.
  • an oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer 212 is formed on the barrier film 11 including the silicon oxide (SiO x ) film, and a Cu alloy layer 213 is formed on the oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer 212 .
  • a composite copper alloy film 214 includes the oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer 212 and the Cu alloy layer 213 .
  • the oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer 212 is a copper alloy underlayer having a component composition including 0.2 mol % to 10 mol % of Ca, 0.05 mol % to 2 mol % in total of one or more selected from the group consisting of Al, Sn, and Sb, 1 mol % to 20 mol % of oxygen, and as the remainder, Cu and inevitable impurities (hereinafter, the copper alloy underlayer having this component composition is referred to as an “oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer”). In this way, a laminate 209 is manufactured.
  • wet etching is performed on a portion of the composite copper alloy film 214 immediately above the gate electrode 2 , and plasma etching is performed on the barrier film 11 including the silicon oxide film, and the n + amorphous Si ohmic film 4 ′. Thereby, an isolation trench 7 is formed, and the n ⁇ amorphous Si semiconductor film 4 is exposed; and as a result, the drain electrode film 5 and the source electrode film 6 are formed. In this way, it is possible to manufacture the intermediate of a thin-film transistor 210 according to the second aspect shown in the cross-sectional view of FIG. 3 .
  • a concentrated layer having high concentrations of Ca, Al, Sn, Sb and oxygen is formed in the oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer 212 .
  • the concentrated layer has a component composition including 2 mol % to 30 mol % of Ca, 1 mol % to 10 mol % in total of one or more selected from the group consisting of Al, Sn, and Sb, 20 mol % to 50 mol % of oxygen, and as the remainder, Cu and inevitable impurities.
  • the oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer 212 is changed to a copper alloy underlayer including the concentrated layer (hereinafter, the copper alloy underlayer including the concentrated layer is referred to as an “copper alloy underlayer containing an oxygen-Ca (Al, Sn, Sb) concentrated layer”) (not shown), and a composite copper alloy film including the copper alloy underlayer containing an oxygen-Ca (Al, Sn, Sb) concentrated layer and a Cu alloy layer is generated.
  • the drain electrode film and the source electrode film each have the composite copper alloy film including the copper alloy underlayer containing an oxygen-Ca (Al, Sn, Sb) concentrated layer and the Cu alloy layer, the adhesion of the drain electrode film and the source electrode film to the barrier film 11 is significantly improved.
  • the present invention is based on the above-mentioned study results and has the following features.
  • a thin-film transistor includes a glass substrate, a gate electrode film that is formed on the glass substrate, a silicon nitride film that is formed on the glass substrate and the gate electrode film, an n ⁇ amorphous Si semiconductor film that is formed on the silicon nitride film, an n + amorphous Si ohmic film that is formed on the n ⁇ amorphous Si semiconductor film, a barrier film that includes a silicon oxide film formed on the n + amorphous Si ohmic film, and a drain electrode film and a source electrode film that are formed on the barrier film including the silicon oxide film.
  • Each of the drain electrode film and the source electrode film includes a composite copper alloy film which includes: at least a copper alloy underlayer containing an oxygen-calcium concentrated layer that is formed so as to come into contact with the barrier film including the silicon oxide film; and a Cu layer that is formed on the copper alloy underlayer containing an oxygen-calcium concentrated layer.
  • the copper alloy underlayer containing an oxygen-calcium concentrated layer includes a concentrated layer.
  • the concentrated layer includes 2 mol % to 30 mol % of Ca, 20 mol % to 50 mol % of oxygen, and as the remainder, Cu and inevitable impurities.
  • An intermediate of a thin-film transistor according to the first aspect of the present invention includes a glass substrate, a gate electrode film that is formed on the glass substrate, a silicon nitride film that is formed on the glass substrate and the gate electrode film, an n ⁇ amorphous Si semiconductor film that is formed on the silicon nitride film, an n + amorphous Si ohmic film that is formed on the n ⁇ amorphous Si semiconductor film, a barrier film that includes a silicon oxide film formed on the n + amorphous Si ohmic film, and a drain electrode film and a source electrode film that are formed on the barrier film including the silicon oxide film.
  • Each of the drain electrode film and the source electrode film includes a composite copper alloy film which includes: a copper alloy underlayer containing oxygen and calcium that is formed so as to come into contact with the barrier film including the silicon oxide film; and a Cu layer that is formed on the copper alloy underlayer containing oxygen and calcium.
  • the copper alloy underlayer containing oxygen and calcium includes 0.01 mol % to 10 mol % of Ca, 1 mol % to 20 mol % of oxygen, and as the remainder, Cu and inevitable impurities.
  • a thin-film transistor includes a glass substrate, a gate electrode film that is formed on the glass substrate, a silicon nitride film that is formed on the glass substrate and the gate electrode film, an n ⁇ amorphous Si semiconductor film that is formed on the silicon nitride film, an n + amorphous Si ohmic film that is formed on the n ⁇ amorphous Si semiconductor film, a barrier film that includes a silicon oxide film formed on the n + amorphous Si ohmic film, and a drain electrode film and a source electrode film that are formed on the barrier film including the silicon oxide film.
  • Each of the drain electrode film and the source electrode film includes a composite copper alloy film which includes: at least a copper alloy underlayer containing an oxygen-Ca (Al, Sn, Sb) concentrated layer that is formed so as to come into contact with the barrier film including the silicon oxide film; and a Cu alloy layer that is formed on the copper alloy underlayer containing an oxygen-Ca (Al, Sn, Sb) concentrated layer.
  • the copper alloy underlayer containing an oxygen-Ca (Al, Sn, Sb) concentrated layer is a copper alloy underlayer including a concentrated layer.
  • the concentrated layer includes 2 mol % to 30 mol % of Ca, 1 mol % to 10 mol % in total of one or more selected from the group consisting of Al, Sn, and Sb, 20 mol % to 50 mol % of oxygen, and as the remainder, Cu and inevitable impurities.
  • the Cu alloy layer formed on the copper alloy underlayer containing an oxygen-Ca (Al, Sn, Sb) concentrated layer may include 0.05 mol % to 2 mol % in total of one or more selected from the group consisting of Al, Sn, and Sb, and as the remainder, Cu and inevitable impurities.
  • An intermediate of a thin-film transistor according to the second aspect of the present invention includes a glass substrate, a gate electrode film that is formed on the glass substrate, a silicon nitride film that is formed on the glass substrate and the gate electrode film, an n ⁇ amorphous Si semiconductor film that is formed on the silicon nitride film, an n + amorphous Si ohmic film that is formed on the n ⁇ amorphous Si semiconductor film, a barrier film includes a silicon oxide film formed on the n + amorphous Si ohmic film, and a drain electrode film and a source electrode film that are formed on the barrier film including the silicon oxide film.
  • Each of the drain electrode film and the source electrode film includes a composite copper alloy film which includes: an oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer that is formed so as to come into contact with the barrier film including the silicon oxide film; and a Cu alloy layer that is formed on the oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer.
  • the oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer includes 0.2 mol % to 10 mol % of Ca, 0.05 mol % to 2 mol % in total of one or more selected from the group consisting Al, Sn, and Sb, 1 mol % to 20 mol % of oxygen, and as the remainder, Cu and inevitable impurities.
  • the Cu alloy layer formed on the oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer may include 0.05 mol % to 2 mol % in total of one or more selected from the group consisting of Al, Sn, and Sb, and as the remainder, Cu and inevitable impurities.
  • the silicon oxide (SiO x ) film is used as the barrier film.
  • the composite copper alloy film is used as the drain electrode film and the source electrode film, and the composite copper alloy film includes the oxygen-calcium copper alloy underlayer containing oxygen and Ca and the Cu layer. Therefore, the adhesion of the drain electrode film and the source electrode film to the barrier film including the silicon oxide (SiO x ) film, is further improved. For example, even in the case where vibration is applied during the transfer of the intermediate of a thin-film transistor according to the first aspect, there is little possibility that a defect will occur due to the peeling-off of the drain electrode film and the source electrode film.
  • the silicon oxide (SiO x ) film which is the barrier film, by just performing pre-sputtering on the surface of the n + amorphous Si ohmic film 4 ′. As a result, it is possible to reduce manufacturing costs.
  • the thin-film transistor according to the first aspect of the present invention is obtained by performing a hydrogen plasma treatment on the intermediate of a thin-film transistor according to the first aspect, and the concentrated layer having high concentrations of Ca and oxygen is generated. Since the thin-film transistor includes the copper alloy underlayer containing an oxygen-calcium concentrated layer which includes the concentrated layer, adhesion to the barrier film including the silicon oxide (SiO x ) film, is further improved. Even in the case where strong vibration is applied to the thin-film transistor according to the first aspect, there is no possibility that a defect will occur in the thin-film transistor due to the peeling-off of the drain electrode film and the source electrode film.
  • the silicon oxide (SiO x ) film is used as the barrier film.
  • the composite copper alloy film is used as the drain electrode film and the source electrode film, and the composite copper alloy film includes the oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer including Ca, Al, Sn, Sb, and oxygen and the Cu alloy layer. Therefore, the adhesion of the drain electrode film and the source electrode film to the barrier film, which is the silicon oxide (SiO x ) film, is further improved.
  • the silicon oxide (SiO x ) film which is the barrier film, by just performing pre-sputtering on the surface of the n + amorphous Si ohmic film 4 ′. As a result, it is possible to reduce manufacturing costs.
  • the thin-film transistor according to the second aspect of the present invention is obtained by performing a hydrogen plasma treatment on the intermediate of a thin-film transistor according to the second aspect, and the concentrated layer having high concentrations of Ca, Al, Sn, Sb, and oxygen is generated. Since the thin-film transistor includes the copper alloy underlayer containing an oxygen-Ca (Al, Sn, Sb) concentrated layer which includes the concentrated layer, adhesion to the barrier film including the silicon oxide (SiO x ) film, is further improved. Even in the case where strong vibration is applied to the thin-film transistor according to the second aspect, there is no possibility that a defect will occur in the thin-film transistor due to the peeling-off of the drain electrode film and the source electrode film.
  • FIG. 1 is a cross-sectional view schematically illustrating an intermediate of a thin-film transistor according to a first aspect (embodiment) of the invention.
  • FIG. 2 is a cross-sectional view schematically illustrating a laminate for manufacturing the intermediate of a thin-film transistor according to the first aspect (embodiment) of the invention.
  • FIG. 3 is a cross-sectional view schematically illustrating an intermediate of a thin-film transistor according to a second aspect (embodiment) of the invention.
  • FIG. 4 is a cross-sectional view schematically illustrating a laminate for manufacturing the intermediate of a thin-film transistor according to the second aspect (embodiment) of the invention.
  • FIG. 5 is a cross-sectional view schematically illustrating an intermediate of a thin-film transistor according to the related art.
  • FIG. 6 is a cross-sectional view schematically illustrating a laminate for manufacturing the intermediate of a thin-film transistor according to the related art.
  • a first embodiment corresponds to the above-mentioned first aspect of the present invention.
  • a thin-film transistor and an intermediate of a thin-film transistor according to the first embodiment will be described in detail together with a method of manufacturing the same with reference to the drawings.
  • FIG. 1 is a cross-sectional view illustrating the intermediate of a thin-film transistor according to the first embodiment
  • FIG. 2 is a cross-sectional view illustrating a laminate for manufacturing the intermediate of a thin-film transistor according to the first embodiment.
  • a gate electrode film 2 including a copper film is formed on the surface of a glass substrate 1 , and a silicon nitride (SiN x ) film 3 is formed on the gate electrode film 2 and the glass substrate 1 .
  • an n ⁇ amorphous Si semiconductor film 4 is formed on the silicon nitride (SiN x ) film 3
  • an n + amorphous Si ohmic film 4 ′ is formed on the n ⁇ amorphous Si semiconductor film 4 .
  • a barrier film 11 including a silicon oxide (SiO x ) film is formed on the n + amorphous Si ohmic film 4 ′.
  • the barrier film 11 including a silicon oxide (SiO x ) film may be formed by a general PVD or CVD. However, the barrier film 11 may be formed by performing pre-sputtering while maintaining an oxygen atmosphere or an inert gas atmosphere including oxygen in a sputtering apparatus so as to oxidize the surface of the n + amorphous Si ohmic film 4 ′.
  • a composite copper alloy film 114 including a copper alloy underlayer containing oxygen and calcium 112 and a Cu layer 113 is formed on the barrier film 11 .
  • the copper alloy underlayer containing oxygen and calcium 112 has a component composition including Ca at a content within a range of 0.01 mol % to 10 mol % of Ca, oxygen at a content within a range of 1 mol % to 20 mol %, and Cu and inevitable impurities as the balance. In this way, a laminate 109 shown in FIG. 2 is manufactured.
  • the composite copper alloy film 114 including the copper alloy underlayer containing oxygen and calcium 112 and the Cu layer 113 is may be formed by the following method using a copper alloy target having a component composition including Ca at a content within a range of 0.01 mol % to 15 mol %, and Cu and inevitable impurities as the balance.
  • sputtering is performed in an inert gas atmosphere including oxygen to form the copper alloy underlayer containing oxygen and calcium 112 . Then, the supply of oxygen stops to change the atmosphere to an inert gas atmosphere. Thereafter, sputtering is performed in the inert gas atmosphere to form the Cu layer 113 .
  • a copper alloy underlayer containing oxygen and calcium which has a component composition including Ca at a content within a range of 0.01 mol % to 10 mol %, oxygen at a content within a range of 1 mol % to 20 mol %, and Cu and inevitable impurities as the balance.
  • the Cu layer 113 is formed by sputtering using a copper alloy target including Ca at a content within a range of 0.01 mol % to 15 mol %, a very small amount of Ca is likely to be mixed with the Cu layer 113 .
  • the amount of Ca is very small, that is, equal to or less than 0.05 mol %, which is within a range of inevitable impurities. Therefore, the Cu layer 113 has substantially the same composition as copper.
  • the thin-film transistor according to the first embodiment can be manufactured.
  • the thin-film transistor according to the first embodiment is manufactured by performing the hydrogen plasma treatment so as to change the copper alloy underlayer containing oxygen and calcium 112 in the intermediate of a thin-film transistor 110 shown in FIG. 1 to a copper alloy underlayer containing an oxygen-calcium concentrated layer. Therefore, the cross-sectional structure configuration of the thin-film transistor is the same as that shown in FIG. 1 .
  • a description of the thin-film transistor according to the first embodiment with reference to the drawings will be omitted.
  • the hydrogen plasma treatment conditions of the intermediate of a thin-film transistor according to the first embodiment are the same as those described in the Background Art.
  • the hydrogen plasma treatment causes the copper alloy underlayer containing oxygen and calcium 112 having a component composition including Ca at a content within a range of 0.01 mol % to 10 mol %, oxygen at a content within a range of 1 mol % to 20 mol %, and Cu and inevitable impurities as the balance in the intermediate of a thin-film transistor according to the first embodiment to be changed into a copper alloy underlayer containing an oxygen-calcium concentrated layer (not shown) including a concentrated layer having a component composition in which the concentrations of Ca and oxygen are further high.
  • the concentrated layer includes Ca at a content within a range of 2 mol % to 30 mol %, oxygen at a content within a range of 20 mol % to 50 mol %, and Cu and inevitable impurities as the balance.
  • the adhesion of the drain electrode film 5 and the source electrode film 6 to the barrier film in the thin-film transistor is significantly improved.
  • the copper alloy underlayer containing an oxygen-calcium concentrated layer including the concentrated layer having the above-mentioned component composition in which the concentrations of Ca and oxygen are further high is generated.
  • the reason is as follows.
  • Ca and oxygen included in the copper alloy underlayer containing oxygen and calcium 112 having the above-mentioned component composition are diffused and moved to the barrier film 11 , and a concentrated layer having higher concentrations of Ca and oxygen is generated in the vicinity of the barrier film 11 .
  • the generated copper alloy underlayer containing an oxygen-calcium concentrated layer includes the concentrated layer having a component composition including Ca at a content within a range of 2 mol % to 30 mol %, oxygen at a content within a range of 20 mol % to 50 mol %, and Cu and inevitable impurities as the balance, and the barrier film includes silicon oxide. It is considered that the reason why the adhesion of the generated copper alloy underlayer containing an oxygen-calcium concentrated layer to the barrier film is significantly high is as follows.
  • hydrogen is diffused into the copper alloy underlayer containing oxygen and calcium 112 having a component composition including Ca at a content within a range of 0.01 mol % to 10 mol %, oxygen at a content within a range of 1 mol % to 20 mol %, and Cu and inevitable impurities as the balance, and then hydrogen reacts with oxygen in the film to generate water.
  • the water reacts with calcium oxide in the film to generate calcium hydroxide.
  • the calcium hydroxide becomes calcium ions and hydroxide ions, and the calcium ions and the hydroxide ions react with the barrier film which includes a silicon oxide film, to generate strong calcium silicate in a portion adjacent to the barrier film including a silicon oxide film.
  • the adhesion of the copper alloy underlayer containing an oxygen-calcium concentrated layer to the barrier film is significantly improved.
  • the composite copper alloy film configures the drain electrode film and the source electrode film in the intermediate of a thin-film transistor according to the first embodiment, and the composite copper alloy film configures the drain electrode film and the source electrode film in the thin-film transistor according to the first embodiment.
  • the barrier film including a silicon oxide (SiO x ) film Since Ca and oxygen are included in the copper alloy underlayer containing oxygen and calcium in the composite copper alloy film that configures the drain electrode film and the source electrode film in the intermediate of a thin-film transistor according to the present embodiment, it is possible to improve adhesion to the barrier film including a silicon oxide (SiO x ) film.
  • the effect of preventing a reduction in adhesion during the hydrogen plasma treatment is insufficient, which is not preferable.
  • a copper alloy target including more than 15 mol % of Ca needs to be manufactured. Even when reactive sputtering in which oxygen is introduced is performed with a copper alloy target including more than 15 mol % of Ca, no discharge occurs at the beginning of sputtering. Therefore, it is difficult to effectively perform sputtering.
  • a crack occurs in a copper alloy including more than 2.5 mol % of Ca during hot rolling; and thereby, it becomes difficult to manufacture a target. Therefore, it is preferable to manufacture a target including more than 2.5 mol % of Ca by performing hot pressing on Cu—Ca master alloy powder.
  • the content of Ca is set to be within a range of 0.01 mol % to 10 mol % and the content of oxygen is set to be within a range of 1 mol % to 20 mol %.
  • the amount of Ca included in the copper alloy underlayer containing an oxygen-calcium concentrated layer in the thin-film transistor which is manufactured by the hydrogen plasma treatment is reduced and does not reach 2 mol %.
  • the thickness of the copper alloy underlayer containing oxygen and calcium be in a range of 10 nm to 100 nm.
  • the amount of Ca included in the concentrated layer in the copper alloy underlayer containing an oxygen-calcium concentrated layer of the manufactured thin-film transistor in a range of 2 mol % to 30 mol %.
  • the copper alloy underlayer containing oxygen and calcium 112 having the above-mentioned component composition in the intermediate of a thin-film transistor is changed so as to have a concentrated layer which has a component composition including Ca at a content within a range of 2 mol % to 30 mol %, oxygen at a content within a range of 20 mol % to 50 mol %, and Cu and inevitable impurities as the balance and has higher concentrations of Ca and oxygen.
  • the copper alloy underlayer containing an oxygen-calcium concentrated layer including this concentrated layer having the component composition is generated, it is possible to further improve the adhesion of the drain electrode film and the source electrode film to the barrier film including a silicon oxide (SiO x ) film.
  • a second embodiment corresponds to the above-mentioned second aspect of the present invention.
  • a thin-film transistor and an intermediate of a thin-film transistor according to the second embodiment will be described in detail together with a method of manufacturing the same with reference to the drawings.
  • FIG. 3 is a cross-sectional view illustrating the intermediate of a thin-film transistor according to the second embodiment
  • FIG. 4 is a cross-sectional view illustrating a laminate for manufacturing the intermediate of a thin-film transistor according to the second embodiment.
  • a gate electrode film 2 including a copper film is formed on the surface of a glass substrate 1 , and a silicon nitride (SiN x ) film 3 is formed on the gate electrode film 2 and the glass substrate 1 .
  • an n ⁇ amorphous Si semiconductor film 4 is formed on the silicon nitride (SiN x ) film 3 , and an n + amorphous Si ohmic film 4 ′ is formed on the n ⁇ amorphous Si semiconductor film 4 .
  • a barrier film 11 including a silicon oxide (SiO x ) film is formed on the n + amorphous Si ohmic film 4 ′.
  • the barrier film 11 including a silicon oxide (SiO x ) film may be formed by general PVD or CVD. However, the barrier film 11 may be formed by performing pre-sputtering while maintaining an oxygen atmosphere or an inert gas atmosphere including oxygen in a sputtering apparatus so as to oxidize the surface of the n + amorphous Si ohmic film 4 ′.
  • a composite copper alloy film 214 including an oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer 212 and a Cu alloy layer 213 is formed on the barrier film 11 .
  • the oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer 212 has a component composition including Ca at a content within a range of 0.2 mol % to 10 mol %, one or more selected from the group consisting of Al, Sn, and Sb at a total content within a range of 0.05 mol % to 2 mol %, oxygen at a content within a range of 1 mol % to 20 mol %, and Cu and inevitable impurities as the balance.
  • a laminate 209 shown in FIG. 4 is manufactured.
  • the composite copper alloy film 214 including the oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer 212 and the Cu alloy layer 213 may be formed by the following method using a copper alloy target having a component composition including Ca at a content within a range of 0.2 mol % to 15 mol %, one or more selected from the group consisting of Al, Sn, and Sb at a total content within a range of 0.1 mol % to 2 mol %, and Cu and inevitable impurities as the balance.
  • sputtering is performed in an inert gas atmosphere including oxygen to form the oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer 212 . Then, the supply of oxygen stops to change the atmosphere to an inert gas atmosphere without oxygen. Thereafter, sputtering is performed in the inert gas atmosphere without oxygen to form the Cu alloy layer 213 .
  • an oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer which has a component composition including Ca at a content within a range of 0.2 mol % to 10 mol %, one or more selected from the group consisting of Al, Sn, and Sb at a total content within a range of 0.05 mol % to 2 mol %, oxygen at a content within a range of 1 mol % to 20 mol %, and Cu and inevitable impurities as the balance.
  • the Cu alloy layer 213 is formed.
  • the Cu alloy layer 213 has a component composition including one or more selected from the group consisting of Al, Sn, and Sb at a total content within a range of 0.05 mol % to 2 mol %, and Cu and inevitable impurities as the balance.
  • the thin-film transistor according to the second embodiment can be manufactured.
  • the thin-film transistor according to the second embodiment is manufactured by performing the hydrogen plasma treatment so as to change the oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer 212 in the intermediate of a thin-film transistor 210 shown in FIG. 3 to a copper alloy underlayer containing an oxygen-calcium concentrated layer including a concentrated layer. Therefore, the cross-sectional structure configuration of the thin-film transistor is the same as that shown in FIG. 3 .
  • a description of the thin-film transistor according to the second embodiment with reference to the drawings will be omitted.
  • the hydrogen plasma treatment causes the oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer 212 having a component composition including Ca at a content within a range of 0.2 mol % to 10 mol %, one or more selected from the group consisting of Al, Sn, and Sb at a total content within a range of 0.05 mol % to 2 mol %, oxygen at a content within a range of 1 mol % to 20 mol %, and Cu and inevitable impurities as the balance in the intermediate of a thin-film transistor according to the second embodiment to be changed into a copper alloy underlayer containing an oxygen-Ca (Al, Sn, Sb) concentrated layer (not shown) including a concentrated layer having a component composition in which the concentrations of Ca, Al, Sn, Sb, and oxygen are further high.
  • a component composition including Ca at a content within a range of 0.2 mol % to 10 mol %, one or more selected from the group consisting of Al, Sn,
  • the concentrated layer includes Ca at a content within a range of 2 mol % to 30 mol %, one or more selected from the group consisting of Al, Sn, and Sb at a total content within a range of 1 mol % to 10 mol %, oxygen at a content within a range of 20 mol % to 50 mol %, and Cu and inevitable impurities as the balance.
  • the copper alloy underlayer containing an oxygen-Ca (Al, Sn, Sb) concentrated layer including the concentrated layer having the above-mentioned component composition in which the concentrations of Ca, Al, Sn, Sb, and oxygen are further high is generated.
  • the generated copper alloy underlayer containing an oxygen-Ca (Al, Sn, Sb) concentrated layer includes the concentrated layer having a component composition including Ca at a content within a range of 2 mol % to 30 mol %, one or more selected from the group consisting of Al, Sn, and Sb at a total content within a range of 1 mol % to 10 mol %, oxygen at a content within a range of 20 mol % to 50 mol %, and Cu and inevitable impurities as the balance, and the barrier film includes silicon oxide. It is considered that the reason why the adhesion of the generated copper alloy underlayer containing an oxygen-Ca (Al, Sn, Sb) concentrated layer to the barrier film is significantly high is as follows.
  • hydrogen is diffused into the oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer 212 having a component composition including Ca at a content within a range of 0.2 mol % to 10 mol %, one or more selected from the group consisting of Al, Sn, and Sb at a total content within a range of 0.05 mol % to 2 mol %, oxygen at a content within a range of 1 mol % to 20 mol %, and Cu and inevitable impurities as the balance, and then hydrogen reacts with oxygen in the film to generate water.
  • the water reacts with calcium oxide in the film to generate calcium hydroxide.
  • the calcium hydroxide becomes calcium ions and hydroxide ions, and the calcium ions and the hydroxide ions react with the barrier film which includes a silicon oxide film, to generate strong calcium silicate in a portion adjacent to the barrier film including a silicon oxide film.
  • the adhesion of the generated copper alloy underlayer containing an oxygen-Ca (Al, Sn, Sb) concentrated layer to the barrier film is significantly improved.
  • the Al hydroxide, the Sn hydroxide, and the Sb hydroxide become Al ions, Sn ions, and Sb ions, and the Al ions, the Sn ions, and the Sb ions react with the barrier film which includes a silicon oxide film, to generate strong Al silicate, strong Sn silicate, and strong Sb silicate in a portion adjacent to the barrier film including a silicon oxide film.
  • the adhesion of the generated copper alloy underlayer containing an oxygen-Ca (Al, Sn, Sb) concentrated layer to the barrier film is significantly improved.
  • the composite copper alloy film configures the drain electrode film and the source electrode film in the intermediate of a thin-film transistor according to the second embodiment, and the composite copper alloy film configures the drain electrode film and the source electrode film in the thin-film transistor according to the second embodiment.
  • the reason why the component composition of the oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer in the composite copper alloy film in the intermediate of a thin-film transistor, and the component composition of the concentrated layer included in the copper alloy underlayer containing an oxygen-Ca (Al, Sn, Sb) concentrated layer in the composite copper alloy film in the thin-film transistor are limited as described above will be explained.
  • the oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer in the composite copper alloy film that configures the drain electrode film and the source electrode film in the intermediate of a thin-film transistor it is possible to improve adhesion to the barrier film including a silicon oxide (SiO x ) film.
  • the content of Ca is less than 0.2 mol %
  • the total content of one or more selected from the group consisting of Al, Sn, and Sb is less than 0.05 mol %, or the content of oxygen is less than 1 mol %, the effect of preventing a reduction in adhesion during the hydrogen plasma treatment is insufficient, which is not preferable.
  • a copper alloy target including more than 15 mol % of Ca needs to be manufactured. Even when reactive sputtering in which oxygen is introduced is performed with a copper alloy target including more than 15 mol % of Ca, no discharge occurs at the beginning of sputtering. Therefore, it is difficult to effectively perform sputtering.
  • a crack occurs in a copper alloy including more than 2.5 mol % of Ca during hot rolling; and thereby, it becomes difficult to manufacture a target. Therefore, it is preferable to manufacture a target including more than 2.5 mol % of Ca by performing hot pressing on Cu master alloy powder.
  • the resistance value of a formed Cu alloy film increases, and it is not preferable to use the Cu alloy film as the drain electrode film and the source electrode film.
  • the content of Ca is set to be within a range of 0.2 mol % to 10 mol %
  • the total content of one or more selected from the group consisting of Al, Sn and Sb is set to be within a range of 0.05 mol % to 2 mol %
  • the content of oxygen is set to be within a range of 1 mol % to 20 mol %.
  • the oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer 212 having the above-mentioned component composition in the intermediate of a thin-film transistor is changed so as to have a concentrated layer which has a component composition including Ca at a content within a range of 2 mol % to 30 mol %, one or more selected from the group consisting of Al, Sn, and Sb at a total content within a range of 1 mol % to 10 mol %, oxygen at a content within a range of 20 mol % to 50 mol %, and Cu and inevitable impurities as the balance and has higher concentrations of Ca, Al, Sn, Sb, and oxygen, during the hydrogen plasma treatment.
  • the copper alloy underlayer containing an oxygen-Ca (Al, Sn, Sb) concentrated layer including this concentrated layer having the component composition is generated, it is possible to further improve adhesion to the barrier film including a silicon oxide (SiO x ) film.
  • An oxygen-free copper with a purity of 99.99 mass % was prepared, and the oxygen-free copper was melted in a high-purity graphite mold in an Ar gas atmosphere by high-frequency induction heating. Ca was added and melted into the obtained molten copper so as to obtain molten metals having component compositions shown in Table 1.
  • the obtained molten metals were molded with a cooled carbon mold, and hot rolling was performed on the molds. Finally, stress-relief annealing was performed on the molds.
  • the surface of the obtained rolled bodies were processed by a lathe machine so as to manufacture targets 1A to 1O that had an outside diameter of 152 mm and a thickness of 5 mm and had the component compositions shown in Table 1.
  • a pure copper target 1P was manufactured from an oxygen-free copper with a purity of 99.999 mass %.
  • a substrate was placed in a sputtering apparatus, and the substrate included a glass plate (“1737” glass plate manufactured by Corning Incorporated with a length of 50 mm, a width of 50 mm, and a thickness of 0.7 mm) and an n + amorphous Si film with a thickness of 100 nm which was formed on the surface of the glass plate.
  • any one of the targets 1A to 1P was placed in the sputtering apparatus such that the distance between the substrate and the targets was 70 mm.
  • a DC power supply was used as a power supply for the sputtering apparatus, and a vacuum chamber of the sputtering apparatus was evacuated to a vacuum of 4 ⁇ 10 ⁇ 5 Pa.
  • an oxygen-Ar mixed gas including oxygen at a ratio shown in Tables 2 and 3 was flowed as a sputtering gas into the vacuum chamber to set the sputtering atmosphere pressure to be 0.67 Pa. Thereafter, discharge (pre-sputtering) was performed with an output of 600 W for one minute under conditions where a shutter was closed; and thereby, a silicon oxide film with a thickness of about 10 nm was formed on the surface of the n + amorphous Si film.
  • the shutter was opened, and discharge was performed with an output of 600 W to form copper alloy underlayers containing oxygen and calcium having thicknesses and component compositions shown in Tables 2 and 3. Thereafter, the supply of oxygen was stopped and sputtering was performed at a pressure of 0.67 Pa only in an Ar gas atmosphere to form a Cu layer that had a thickness of 250 nm and included Cu and inevitable impurities.
  • composite copper alloy films 101 to 114 for an intermediate of a thin-film transistor according to examples of the invention composite copper alloy films 101 to 103 for an intermediate of a thin-film transistor according to comparative examples, and a composite copper alloy film 101 for an intermediate of a thin-film transistor according to the related art were formed.
  • the cross cut adhesion test was performed on the obtained composite copper alloy films for an intermediate of a thin-film transistor under the following conditions.
  • a cutter was used to make 11-by-11 cuts in the surface of the composite copper alloy film for an intermediate of a thin-film transistor at intervals of 1 mm on the basis of JIS-K5400; and thereby, 100 cell films (square films) were formed.
  • a Scotch tape manufactured by 3M was adhered and taken away from the surface at once. Then, the number of cell films peeling off among the cell films adhered to a central area of 10 mm by 10 mm of the glass substrate was measured.
  • the contents of Ca and oxygen included in the copper alloy underlayer containing oxygen and calcium of the composite copper alloy film for an intermediate of a thin-film transistor were analyzed by a scanning auger electron spectroscopy analyzer (Model: PHI700 manufactured by Ulvac-Phi, Incorporated) under the following conditions.
  • the composite copper alloy films 101 to 114 for an intermediate of a thin-film transistor according to the example of the invention have adhesion properties more excellent than that of the composite copper alloy film 101 for an intermediate of a thin-film transistor according to the related art.
  • the composite copper alloy films 101 to 102 for an intermediate of a thin-film transistor according to the comparative examples having values outside the ranges of the conditions of the first embodiment have low adhesion properties, which is not preferable.
  • composite copper alloy films 101 to 114 for an intermediate of a thin-film transistor according to the examples of the invention, the composite copper alloy films 101 to 102 for an intermediate of a thin-film transistor according to the comparative examples, and the composite copper alloy film 101 for an intermediate of a thin-film transistor according to the related art shown in Tables 2 and 3 which could be formed were subjected to a hydrogen plasma treatment under the following conditions.
  • composite copper alloy films 101 to 114 for a thin-film transistor according to the examples of the invention, composite copper alloy films 101 to 102 for a thin-film transistor according to the comparative examples, and a composite copper alloy film 101 for a thin-film transistor according to the related art were manufactured.
  • These composite copper alloy films for a thin-film transistor each included a Cu layer and a copper alloy underlayer containing an oxygen-calcium concentrated layer including a concentrated layer having a component composition shown in Tables 4 and 5.
  • the specific resistances of the composite copper alloy films 101 to 114 for a thin-film transistor according to the examples of the invention were almost same as that of the composite copper alloy film 101 for a thin-film transistor according to the related art, and there was no great difference between the specific resistances.
  • the adhesion properties of the composite copper alloy films 101 to 114 for a thin-film transistor according to the examples of the invention were considerably higher than that of the composite copper alloy film 101 for a thin-film transistor according to the related art.
  • the thin-film transistor according to the first embodiment which includes the electrode film including any one of the composite copper alloy films 101 to 114 for a thin-film transistor according to the examples of the invention, it can be understood that the possibility to occur defects due to the peeling-off of the electrode film is significantly reduced.
  • the composite copper alloy films 101 to 102 for a thin-film transistor according to the comparative examples which had values outside the ranges of the conditions of the first embodiment, at least one of the specific resistance and the adhesion properties deteriorated. Therefore, the composite copper alloy films 101 to 102 for a thin-film transistor were not preferable as the electrode film of the thin-film transistor.
  • the obtained Cu—Ca master alloy powders were classified to produce Cu—Ca master alloy powders with a maximum particle diameter of 100 ⁇ m or less. Then, the Cu—Ca master alloy powders were each filled in a graphite mold having a mold release agent coated thereon, and hot pressing was performed under conditions where a temperature was 800° C., a pressure was 15 MPa, and a retention time was 30 minutes; and thereby, hot-pressed bodies were manufactured.
  • a machining process was performed on the hot-pressed bodies to manufacture targets 1a to 1n having the component compositions shown in Table 6.
  • a substrate was placed in a sputtering apparatus, and the substrate included a glass plate (“1737” glass plate manufactured by Corning Incorporated with a length of 50 mm, a width of 50 mm, and a thickness of 0.7 mm) and an n + amorphous Si film with a thickness of 100 nm which was formed on the surface of the glass plate.
  • any one of the targets 1a to 1n shown in Table 6 was placed in the sputtering apparatus such that the distance between the substrate and the targets was 70 mm.
  • a DC power supply was used as a power supply for the sputtering apparatus, and a vacuum chamber of the sputtering apparatus was evacuated to a vacuum of 4 ⁇ 10 ⁇ 5 Pa.
  • an oxygen-Ar mixed gas including oxygen at the ratio shown in Table 7 was flowed as a sputtering gas into the vacuum chamber to set the sputtering atmosphere pressure to be 0.67 Pa. Thereafter, discharge (pre-sputtering) was performed with an output of 600 W for one minute under condition where a shutter was closed; and thereby, a silicon oxide film with a thickness of about 10 nm was formed on the surface of the n + amorphous Si film.
  • the shutter was opened and discharge was performed with an output of 600 W to form a copper alloy underlayer containing oxygen and calcium having a thickness of 50 nm and component compositions shown in Table 7. Thereafter, the supply of oxygen was stopped and sputtering was performed at a pressure of 0.67 Pa only in an Ar gas atmosphere to form a Cu layer that had a thickness of 250 nm and included Cu and inevitable impurities.
  • composite copper alloy films 115 to 127 for an intermediate of a thin-film transistor according to the examples of the invention were formed.
  • the target In including more than 15 mol % of Ca shown in Table 6 was used to attempt to form a film.
  • discharge did not occur at the beginning of sputtering. Therefore, it was difficult to form the composite copper alloy film 104 for an intermediate of a thin-film transistor according to the comparative example.
  • the cross cut adhesion test was performed on the obtained composite copper alloy films for an intermediate of a thin-film transistor under the same conditions as those in Example 1.
  • the obtained results are shown in the field “the number of cells peeling off (cells/100)” in Table 7 and were used to evaluate adhesion properties to the glass substrate.
  • composite copper alloy films 115 to 127 for an intermediate of a thin-film transistor according to the example of the invention shown in Table 7, which could be formed, were subjected to a hydrogen plasma treatment under the same conditions as those in Example 2.
  • composite copper alloy films 115 to 127 for a thin-film transistor according to the examples of the invention were manufactured.
  • These composite copper alloy films for a thin-film transistor each included a Cu layer and a copper alloy underlayer containing an oxygen-calcium concentrated layer including a concentrated layer having a component composition shown in Table 8.
  • the specific resistances of the composite copper alloy films 115 to 127 for a thin-film transistor according to the examples of the invention were almost same as that of the composite copper alloy film 101 for a thin-film transistor according to the related art shown in Table 5, and there was no great difference between the specific resistances.
  • the adhesion properties of the composite copper alloy films 115 to 127 for a thin-film transistor according to the examples of the invention were considerably higher than that of the composite copper alloy film 101 for a thin-film transistor according to the related art.
  • the thin-film transistor according to the first embodiment of the invention which includes the electrode film including any one of the composite copper alloy films 115 to 127 for a thin-film transistor according to the examples of the invention, it can be understood that the possibility to occur defects due to the peeling-off of the electrode film is significantly reduced.
  • An oxygen-free copper with a purity of 99.99 mass % was prepared, and the oxygen-free copper was melted in a high-purity graphite mold in an Ar gas atmosphere by high-frequency induction heating.
  • Ca and one or more selected from the group consisting of Al, Sn, and Sb were added and melted into the obtained molten copper so as to obtain molten metals having component compositions shown in Table 9.
  • the obtained molten metals were molded with a cooled carbon mold and hot rolling was performed on the molds. Finally, stress-relief annealing was performed on the molds.
  • the surface of the obtained rolled bodies were processed by a lathe machine so as to manufacture targets 2A to 2M that had an outside diameter of 152 mm and a thickness of 6 mm and had the component composition shown in Table 9.
  • a pure copper target 2N was manufactured from an oxygen-free copper with a purity of 99.99 mass %.
  • a substrate was placed in a sputtering apparatus, and the substrate included a glass plate (“1737” glass plate manufactured by Corning Incorporated with a length of 50 mm, a width of 50 mm, and a thickness of 0.7 mm) and an n + amorphous Si film with a thickness of 100 nm which was formed on the surface of the glass plate.
  • any one of the targets 2A to 2M was placed in the sputtering apparatus such that the distance between the substrate and the targets was 70 mm.
  • a DC power supply was used as a power supply for the sputtering apparatus and a vacuum chamber of the sputtering apparatus was evacuated to a vacuum of 4 ⁇ 10 ⁇ 5 Pa.
  • an oxygen-Ar mixed gas including oxygen at a ratio shown in Table 10 was flowed as a sputtering gas into the vacuum chamber to set the sputtering atmosphere pressure to be 0.67 Pa. Thereafter, discharge (pre-sputtering) was performed with an output of 600 W for one minute under conditions where a shutter was closed; and thereby, a silicon oxide film with a thickness of about 10 nm was formed on the surface of the n + amorphous Si film.
  • the shutter was opened, and discharge was performed with an output of 600 W to form oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayers having a thickness of 50 nm and component compositions shown in Table 10. Thereafter, the supply of oxygen was stopped and sputtering was performed at a pressure of 0.67 Pa only in an Ar gas atmosphere to form a Cu layer that had a thickness of 250 nm and included Cu and inevitable impurities.
  • oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayers having a thickness of 50 nm and component compositions shown in Table 10.
  • composite copper alloy films 201 to 212 for an intermediate of a thin-film transistor according to the examples of the invention composite copper alloy films 201 to 203 for an intermediate of a thin-film transistor according to a comparative examples, and a composite copper alloy film 201 for an intermediate of a thin-film transistor according to the related art were formed.
  • the contents of Ca, Al, Sn, Sb, and oxygen included in the oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer of each of the composite copper alloy films for an intermediate of a thin-film transistor were analyzed by a scanning auger electron spectroscopy analyzer (Model: PHI700 manufactured by Ulvac-Phi, Incorporated) under the same conditions as those in Example 1.
  • the composite copper alloy films 201 to 212 for an intermediate of a thin-film transistor according to the examples of the invention have adhesion properties more excellent than that of the composite copper alloy film 201 for an intermediate of a thin-film transistor according to the related art.
  • the composite copper alloy films 201 to 212 for an intermediate of a thin-film transistor according to the comparative examples having values outside the ranges of the conditions of the second embodiment have low adhesion properties, which is not preferable.
  • composite copper alloy films 201 to 212 for an intermediate of a thin-film transistor according to the examples of the invention, the composite copper alloy films 201 and 202 for an intermediate of a thin-film transistor according to the comparative examples, and the composite copper alloy film 201 for an intermediate of a thin-film transistor according to the related art shown in Table 10 which could be formed were subjected to a hydrogen plasma treatment under the same conditions as those in Example 2.
  • composite copper alloy films 201 to 212 for a thin-film transistor according to the examples of the invention, composite copper alloy films 201 and 202 for a thin-film transistor according to the comparative examples, and a composite copper alloy film 201 for a thin-film transistor according to the related art were manufactured.
  • These composite copper alloy films for a thin-film transistor each included a copper alloy underlayer containing an oxygen-Ca (Al, Sn, Sb) concentrated layer including a concentrated layer having a component composition shown in Table 11.
  • the specific resistances of the composite copper alloy films 201 to 212 for a thin-film transistor according to the examples of the invention were almost same as that of the composite copper alloy film 201 for a thin-film transistor according to the related art, and there was no great difference between the specific resistances.
  • the adhesion properties of the composite copper alloy films 201 to 212 for a thin-film transistor according to the examples of the invention were considerably higher than that of the composite copper alloy film 201 for a thin-film transistor according to the related art.
  • the thin-film transistor according to the second embodiment of the invention which includes the electrode film including any one of the composite copper alloy films 201 to 212 for a thin-film transistor according to the examples of the invention, it can be understood that the possibility to occur defects due to the peeling-off of the electrode film is significantly reduced.
  • the composite copper alloy films 201 and 202 for a thin-film transistor according to the comparative examples which had values outside the ranges of the conditions of the second embodiment, at least one of the specific resistance and the adhesion properties deteriorated. Therefore, the composite copper alloy films 201 and 202 for a thin-film transistor were not preferable as the electrode film of the thin-film transistor.
  • an Ar gas was introduced into a high-frequency melting furnace to change the atmosphere to an Ar gas atmosphere, and copper, calcium, aluminum, tin, and antimony were melted by the high-frequency melting furnace and molded to manufacture Cu master alloy ingots containing different amounts of Ca, Al, Sn, and Sb.
  • the Cu master alloy ingots containing different amounts of Ca, Al, Sn, and Sb were melted again to obtain molten metals, and the obtained molten metals were each subjected to gas-atomizing in an Ar gas flow at a pressure of 3 MPa while maintaining the temperature at 1250° C. to produce Cu master alloy powders having component compositions shown in Table 12.
  • the obtained Cu master alloy powders were classified to produce Cu master alloy powder with a maximum particle diameter of 100 ⁇ m or less. Then, the Cu master alloy powders were each filled in a graphite mold having a mold release agent coated thereon, and hot pressing was performed under the conditions where a temperature was 800° C., a pressure was 15 MPa, and a retention time was 30 minutes; and thereby, hot-pressed bodies were manufactured.
  • a machining process was performed on the hot-pressed bodies to manufacture targets 2a to 2n having the component compositions shown in Table 12.
  • a substrate was placed in a sputtering apparatus, and the substrate included a glass plate (“1737” glass plate manufactured by Corning Incorporated with a length of 50 mm, a width of 50 mm, and a thickness of 0.7 mm) and an n + amorphous Si film with a thickness of 100 nm which was formed on the surface of the glass plate.
  • any one of the targets 2a to 2n shown in Table 12 was placed in the sputtering apparatus such that the distance between the substrate and the targets was 70 mm.
  • a DC power supply was used as a power supply for the sputtering apparatus, and a vacuum chamber of the sputtering apparatus was evacuated to a vacuum of 4 ⁇ 10 ⁇ 5 Pa.
  • an oxygen-Ar mixed gas including oxygen at the ratio shown in Table 13 was flowed as a sputtering gas into the vacuum chamber to set the sputtering atmosphere pressure to be 0.67 Pa. Thereafter, discharge (pre-sputtering) was performed with an output of 600 W for one minute under condition where a shutter was closed; and thereby, a silicon oxide film with a thickness of about 10 nm was formed on the surface of the n + amorphous Si film.
  • the shutter was opened and discharge was performed with an output of 600 W to form an oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer having a thickness of 50 nm and component compositions shown in Table 13. Thereafter, the supply of oxygen was stopped and sputtering was performed at a pressure of 0.67 Pa only in an Ar gas atmosphere to form a Cu layer that had a thickness of 250 nm and included Cu and inevitable impurities.
  • composite copper alloy films 212 to 224 for an intermediate of a thin-film transistor according to the examples of the invention were formed.
  • the target 2n including more than 15 mol % of Ca shown in Table 12 was used to attempt to form a film.
  • discharge did not occur at the beginning of sputtering. Therefore, it was difficult to form the composite copper alloy film 204 for an intermediate of a thin-film transistor according to the comparative example.
  • the cross cut adhesion test was performed on the obtained composite copper alloy films for an intermediate of a thin-film transistor under the same conditions as those in Example 1.
  • the obtained results are shown in the field “the number of cells peeling off (cells/100)” in Table 13 and were used to evaluate adhesion properties to the glass substrate.
  • the contents of Ca, Al, Sn, Sb, and oxygen included in the oxygen-Ca (Al, Sn, Sb) copper alloy intermediate underlayer of each of the composite copper alloy films 212 to 224 for an intermediate of a thin-film transistor according to the examples of the invention were analyzed by a scanning auger electron spectroscopy analyzer (Model: PHI700 manufactured by Ulvac-Phi, Incorporated) under the same conditions as those in Example 1.
  • the composite copper alloy films 212 to 224 for an intermediate of a thin-film transistor according to the examples of the invention had adhesion properties higher than that of the composite copper alloy film 201 for an intermediate of a thin-film transistor according to the related art shown in Table 10.
  • composite copper alloy films 212 to 224 for an intermediate of a thin-film transistor according to the examples of the invention shown in Table 13, which could be formed, were subjected to a hydrogen plasma treatment under the same conditions as those in Example 2.
  • composite copper alloy films 212 to 224 for a thin-film transistor according to the examples of the invention were manufactured.
  • These composite copper alloy films for a thin-film transistor each included a Cu alloy layer and a copper alloy underlayer containing an oxygen-Ca (Al, Sn, Sb) concentrated layer including a concentrated layer having a component composition shown in Table 14.
  • the specific resistances of the composite copper alloy films 212 to 224 for a thin-film transistor according to the examples of the invention were almost same as that of the composite copper alloy film 201 for a thin-film transistor according to the related art shown in Table 11, and there was no great difference between the specific resistances.
  • the adhesion properties of the composite copper alloy films 212 to 224 for a thin-film transistor according to the examples of the invention were considerably higher than that of the composite copper alloy film 201 for a thin-film transistor according to the related art.
  • the thin-film transistor according to the second embodiment of the invention which includes the electrode film including any one of the composite copper alloy films 212 to 224 for a thin-film transistor according to the examples of the invention, it can be understood that the possibility to occur defects due to the peeling-off of the electrode film is significantly reduced.
  • the drain electrode film and the source electrode film have high adhesion properties. Therefore, even in the case where vibration is applied during transfer, there is little possibility that a defect will occur due to the peeling-off of the drain electrode film and the source electrode film. Therefore, the invention can be applied to a thin-film transistor used in, for example, a flat panel display or an intermediate of a thin-film transistor thereof.

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JP5354781B2 (ja) * 2009-03-11 2013-11-27 三菱マテリアル株式会社 バリア層を構成層とする薄膜トランジスターおよび前記バリア層のスパッタ成膜に用いられるＣｕ合金スパッタリングターゲット
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US11233071B2 (en) * 2018-05-28 2022-01-25 Shenzhen China Star Optoelectronics Technology Co., Ltd. Electrode structure and array substrate

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