US6564439B1 - Method and manufacturing a surface acoustic wave element - Google Patents

Method and manufacturing a surface acoustic wave element Download PDF

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Publication number
US6564439B1
US6564439B1 US09/546,862 US54686200A US6564439B1 US 6564439 B1 US6564439 B1 US 6564439B1 US 54686200 A US54686200 A US 54686200A US 6564439 B1 US6564439 B1 US 6564439B1
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United States
Prior art keywords
acoustic wave
surface acoustic
frequency
piezoelectric substrate
etching
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Expired - Lifetime
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US09/546,862
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English (en)
Inventor
Eiichi Takata
Yasuji Yamamoto
Toshimaro Yoneda
Michio Kadota
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Assigned to MURATA MANUFACTURING CO., LTD. reassignment MURATA MANUFACTURING CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: YONEDA, TOSHIMARO, YAMAMOTO, YASUJI, KADOTA, MICHIO, TAKATA, EIICHI
Priority to US10/054,921 priority Critical patent/US6810566B2/en
Priority to US10/054,907 priority patent/US6789297B2/en
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Publication of US6564439B1 publication Critical patent/US6564439B1/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49005—Acoustic transducer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/4908—Acoustic transducer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49789—Obtaining plural product pieces from unitary workpiece
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49789—Obtaining plural product pieces from unitary workpiece
    • Y10T29/49798—Dividing sequentially from leading end, e.g., by cutting or breaking

Definitions

  • the present invention relates to a method of manufacturing a surface acoustic wave element and a surface acoustic wave apparatus. More particularly, the present invention relates to a method of manufacturing and adjusting the frequency of a surface acoustic wave element.
  • a conventional frequency adjusting or trimming method for a surface acoustic wave device which reduces the thickness of an interdigital transducer (IDT) or piezoelectric substrate is disclosed in Japanese Unexamined Patent Publication No. 2-189011.
  • IDT 21 a is selectively etched so as to reduce the thickness of the IDT 21 a , thereby increasing the frequency thereof.
  • the upper surface of an exposed piezoelectric substrate 20 a is selectively etched so as to partially reduce the thickness of the piezoelectric substrate 20 a , thus reducing the frequency.
  • IDT 21 a is made of Al, which is the most common material used for surface acoustic wave devices, reduction in the thickness of the IDT causes very little increase in the frequency. Thus, adjusting the frequency by reducing the thickness of IDTs is not a practical and commercially useful method.
  • RIE Reactive Ion Etching
  • the RIE method requires that the whole wafer be etched in the chamber of the RIE device. So, if electrode films within a wafer do not have uniform thickness, it is impossible to effect a partial etching treatment. Thus, a uniform thickness is required to ensure as many good products as possible.
  • the selective etching of the IDT or the piezoelectric substrate depends on the chemical properties of the IDT and piezoelectric substrate. As a result, there may not exist a suitable etchant or etching gas that can selectively etch either the IDT or the piezoelectric substrate.
  • CF 4 is used as the reactive gas to adjust the frequency.
  • an etching treatment using CF 4 on the quartz crystal and Al will result in the quartz crystal being etched more than the Al.
  • the frequency will have to be adjusted by obtaining a condition that is substantially the same as in which the upper surface of the piezoelectric substrate shown in FIG. 6B is selectively etched.
  • the piezoelectric substrate is etched too much and in too large an amount, the characteristic of the piezoelectric substrate will be deteriorated due to the etching treatment. As a result, an adjustment can only be performed in a range in which there is no characteristic deterioration. Consequently, a problem occurs in that the range for adjusting the frequency is very narrow.
  • preferred embodiments of the present invention provide a method of manufacturing a surface acoustic wave device in which the frequency of the surface acoustic wave device is adjustable over a wide range.
  • the preferred embodiments also provide a method which allows the surface acoustic wave device to be adjusted for each discrete device, and to be adjusted while measuring the frequency, or such that the frequency measurement may be changed over to a frequency adjustment or vice versa.
  • One preferred embodiment of the present invention provides a method of manufacturing a surface acoustic wave element including the steps of providing a piezoelectric substrate having an interdigital transducer, where the interdigital transducer has a higher density than the piezoelectric substrate, and ion bombarding the interdigital transducer and the piezoelectric body simultaneously.
  • a method of manufacturing a surface acoustic wave device includes the steps of disposing a metal film on a piezoelectric body, where the metal film has a higher density than the piezoelectric body, forming a plurality of interdigital transducers on the piezoelectric body, cutting the piezoelectric body into a plurality of surface acoustic wave elements such that each of the surface acoustic elements has at least one interdigital transducer, simultaneously etching the at least one interdigital transducer and the piezoelectric body, and packaging at least one of the surface acoustic wave elements.
  • a method of manufacturing a surface acoustic wave device includes providing a wafer, forming a plurality of interdigital transducers on the wafer, forming a plurality of surface acoustic wave elements, each of the surface acoustic wave elements having at least one interdigital transducer, packaging at least one of the surface acoustic wave elements, and adjusting a frequency of the packaged surface acoustic wave element.
  • the surface of the piezoelectric body is also preferably etched since such a surface is similarly bombarded by the ions in the same way that the IDTs are bombarded.
  • the IDTs are made of a metal having a greater density than that of the piezoelectric body, the frequency change caused by the etching of the piezoelectric body is not as great as the frequency change caused by the etching of the IDTs. Thus, the net frequency change is preferably higher.
  • a partial bombardment of the ions on the wafer so that only a partial adjustment is performed.
  • the surface acoustic wave device is made by forming a metal film having a higher density than the piezoelectric body, and since ions are caused to physically bombard the elastic surface acoustic wave device so as to reduce the thickness of the IDT film, and since the IDTs have a significant effect on the frequency, it is possible to adjust the frequency without having to scrape off large amounts of the piezoelectric material as in the RIE method.
  • ions physically bombard the surface acoustic wave device so that the thickness of IDTs or a metal film is greatly reduced, it is possible to locally concentrate the high energy, thus making it possible to effect a frequency adjustment in individual elements or to effect a partial adjustment of the frequency in a shortened time period.
  • FIG. 1 is a block diagram illustrating a manufacturing process according to a first preferred embodiment of the present invention
  • FIGS. 2A to 2 E are perspective views illustrating the steps involved in the manufacturing process of the first preferred embodiment of the present invention.
  • FIG. 3 is a partially enlarged cross-sectional view showing the etched state of IDTs in the first preferred embodiment of the present invention
  • FIG. 4 is a block diagram illustrating a manufacturing process according to a second preferred embodiment of the present invention.
  • FIG. 5 is a block diagram illustrating a manufacturing process according to a third preferred embodiment of the present invention.
  • FIG. 6A is a partially enlarged cross-sectional view showing the etched state of IDTs in a conventional etching method, and which also shows the IDTs being selectively etched;
  • FIG. 6B is a partially enlarged cross-sectional view showing an etched state of IDTs in a conventional etching method, and which also shows the piezoelectric substrate being selectively etched.
  • One of the unique features of preferred embodiments of the present invention includes forming on a piezoelectric substrate an interdigital transducer (IDT) which has a higher density than the piezoelectric substrate, and etching the IDT and the piezoelectric substrate at the same time via ion bombardment. Etching via ion bombardment is mainly a physical process.
  • the method of preferred embodiments of the present invention can be applied to many different combinations of substrates and IDTs.
  • etching of the IDTs predominantly effects frequency adjustment of the surface acoustic wave devices, whereby the frequency of the surface acoustic wave device can be adjusted or trimmed. In most cases, the frequency is adjusted so that it is increased.
  • FIG. 1 is a block diagram illustrating a process of manufacturing a surface acoustic wave device according to a preferred embodiment of the present invention.
  • FIGS. 2A-2E are perspective views showing the various steps involved in the process of FIG. 1 . In the following description, the steps involved in the manufacturing process will be described successively preferably according to production order.
  • a wafer 10 preferably made of a quartz crystal is provided as shown in FIG. 2 A.
  • a metal film 11 preferably having Ta as its main component is formed on the upper surface of the wafer 10 by way of vapor deposition or sputtering treatment or other suitable process.
  • portions of the metal film 11 are removed by etching, thus etching out an electrode pattern, thereby forming the plurality of IDTs 11 a and the plurality of reflectors 11 b , as shown in FIG. 2 C.
  • FIG. 2 C the next step, as shown in FIG.
  • the wafer 10 is cut at portions where the IDTs 11 a and reflectors 11 b are not located, and a combination of IDTs 11 a and reflectors 11 b define one surface acoustic wave element. Then, either the IDTs 11 a and the reflectors 11 b or the piezoelectric substrate 10 a of the surface acoustic wave element are etched in order to adjust the frequency characteristic of the surface acoustic wave element until the desired characteristic is achieved. Next, as shown in FIG. 2E, the surface acoustic wave element 12 is inserted into a package 13 , so as to electrically connect the electrodes 14 of the package 13 with IDTs 11 a via a bonding wire 15 .
  • FIG. 3 is a schematic view illustrating the process for adjusting the frequency of the surface acoustic wave element in a preferred embodiment of the present invention.
  • an ion sputtering apparatus 16 has an ion gun 16 a , a gas inlet 16 b for introducing a gas such as Ar to produce a sputtering effect, a grid 16 c , a stage 16 d to support the surface acoustic wave element 13 . Further, an ion beam 17 collides into the surface of the surface acoustic wave element 13 so that it is possible to etch the surface of the IDT 11 a preferably made of Ta and the surface of the piezoelectric substrate 10 a preferably made of quartz crystal.
  • the etching rate of the Ta or the etching rate of the quartz crystal are etched in the same amount.
  • the amount of etching required of the Ta for the frequency to shift towards the high frequency side is much less than the amount of etching required of the quartz crystal for the frequency to shift towards the low frequency side. So, by this etching process, the frequency of the surface acoustic wave element 13 is adjusted so as to be higher.
  • the method of the present invention is not limited to being applied to a longitudinally coupled elastic surface acoustic wave filter having reflectors.
  • the present invention can also be applied to other types of surface acoustic wave devices such as a surface acoustic wave resonator, a laterally coupled filter, a ladder-type filter, and an edge reflection type surface acoustic wave device, which does not have reflectors.
  • the present invention is not be limited to IDTs made of Ta.
  • the IDT may be made of W, Au, Ag, Pt, Mo, Ni, Fe, Cu, Co, Cr, Zn, Mn or an alloy, or other suitable materials having a density that is greater than that of the piezoelectric substrate.
  • quartz crystal was used as the material for the piezoelectric substrate
  • the present invention is not limited to a piezoelectric substrate made of quartz crystal. It is also possible that the piezoelectric substrate be made of lithium tantalate, lithium niobate, zinc oxide, lithium tetraborate, langasite or other suitable materials.
  • Ar was used as the etching gas or the gas for ion bombardment
  • the present invention is not limited to using Ar gas for ion bombardment.
  • the gas used for ion bombardment can also be carbon fluoride gas such as CF 4 , C 2 F 6 , or a chlorine gas such as CCI 4 , CF 3 CI, or N 2 gas or an N 2 gas mixture, or other similar gases.
  • the etching process may be performed by virtue of plasma treatment using N 2 gas.
  • an ion gun was used during the etching process, the present invention is not limited to using an ion gun.
  • a common sputtering apparatus can also be used to conduct a reverse sputtering treatment, thereby obtaining the same effect.
  • FIG. 4 is a block diagram illustrating the process of manufacturing a surface acoustic wave device according to a second preferred embodiment of the present invention.
  • the second preferred embodiment is different from the first preferred embodiment in that the process of adjusting the frequency is preferably a multi-step process occurring after formation of the IDT and after the packaging process.
  • the frequency adjustment process after formation of the IDT may be carried out during wafer formation by individually adjusting each element with the use of the apparatus shown in FIG. 3 .
  • the frequency adjustment can be performed approximately with the use of a conventional etching treatment.
  • a surface acoustic wave element is inserted into a package and is electrically connected through wire bonding or face-down bonding, thereby correcting deviations from the desired frequency in the surface acoustic wave device in the package.
  • the apparatus of FIG. 3 is preferably used so as to individually adjust the elastic surface acoustic wave device.
  • FIG. 5 is a block, diagram illustrating a manufacturing process of a surface acoustic wave device according to a third preferred embodiment of the present invention.
  • the third preferred embodiment is different from the first preferred embodiment in that the process of adjusting the film thickness process is carried out after the formation of the metal film.
  • the process of adjusting the thickness after the metal film is formed may be carried out using a conventional etching method.
  • an approximate adjustment can first be performed using the conventional etching method and then the thickness can be adjusted individually with the use of the apparatus of FIG. 3 .
  • the thickness of the metal film is made uniform while in the state of a metal film, it is possible to prevent frequency irregularities caused by thickness variations in the IDT. Therefore, fine adjustments to the frequency of the piezoelectric element can be made after adjusting the film thickness of the metal film.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
US09/546,862 1999-04-28 2000-04-10 Method and manufacturing a surface acoustic wave element Expired - Lifetime US6564439B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/054,921 US6810566B2 (en) 1999-04-28 2002-01-25 Method of manufacturing a surface acoustic wave element
US10/054,907 US6789297B2 (en) 1999-04-28 2002-01-25 Method of manufacturing a surface acoustic wave element

Applications Claiming Priority (2)

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JP11-122507 1999-04-28
JP12250799A JP3712035B2 (ja) 1999-04-28 1999-04-28 表面波装置の製造方法

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US10/054,907 Division US6789297B2 (en) 1999-04-28 2002-01-25 Method of manufacturing a surface acoustic wave element

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US10/054,921 Expired - Lifetime US6810566B2 (en) 1999-04-28 2002-01-25 Method of manufacturing a surface acoustic wave element
US10/054,907 Expired - Lifetime US6789297B2 (en) 1999-04-28 2002-01-25 Method of manufacturing a surface acoustic wave element

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US10/054,907 Expired - Lifetime US6789297B2 (en) 1999-04-28 2002-01-25 Method of manufacturing a surface acoustic wave element

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US (3) US6564439B1 (de)
EP (1) EP1049252A3 (de)
JP (1) JP3712035B2 (de)
KR (1) KR100352392B1 (de)
CN (1) CN1158758C (de)
SG (1) SG97148A1 (de)
TW (1) TW480812B (de)

Cited By (4)

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US20020100744A1 (en) * 2001-01-31 2002-08-01 Leitz John R. System for frequency adjustment of piezoelectric resonators by dual-track ion etching
US20050240167A1 (en) * 2001-09-07 2005-10-27 Medtronic Minimed, Inc. Infusion device and driving mechanism for same
US20050275309A1 (en) * 2004-06-09 2005-12-15 Seiko Epson Corporation Surface acoustic wave device, method of manufacturing the same, and electronic apparatus
US20110035915A1 (en) * 2009-08-11 2011-02-17 Murata Manufacturing Co., Ltd. Method for manufacturing surface acoustic wave element

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JP2002043880A (ja) * 2000-07-26 2002-02-08 Murata Mfg Co Ltd 弾性表面波素子の周波数調整方法
DE10206480B4 (de) 2001-02-16 2005-02-10 Leibniz-Institut für Festkörper- und Werkstoffforschung e.V. Akustisches Oberflächenwellenbauelement
DE10162580A1 (de) * 2001-12-19 2003-07-17 Infineon Technologies Ag Piezoelektrischer Schwingkreis, Verfahren zu dessen Herstellung und Filteranordnung
AU2002361093A1 (en) * 2001-12-28 2003-07-24 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device, electronic component using the device, and composite module
WO2003088483A1 (fr) * 2002-04-15 2003-10-23 Matsushita Electric Industrial Co., Ltd. Dispositif a ondes acoustiques de surface, appareil de communication mobile et capteur mettant tous deux en oeuvre ledit dispositif
KR100496527B1 (ko) * 2002-09-25 2005-06-22 일진디스플레이(주) 표면 탄성파 소자용 탄탈산 리튬 단결정 기판의 제조방법
KR100496526B1 (ko) * 2002-09-25 2005-06-22 일진디스플레이(주) 표면 탄성파 소자용 탄탈산 리튬 단결정 기판의 제조방법
US8132314B2 (en) * 2008-10-29 2012-03-13 Honeywell International Inc. Method and system for packaging and mounting surface acoustic wave sensor elements to a flex plate
CN102412802A (zh) * 2011-11-24 2012-04-11 中国电子科技集团公司第二十六研究所 基片级声表面波器件的频率修正方法
CN103701424A (zh) * 2013-12-24 2014-04-02 珠海东精大电子科技有限公司 49s石英晶体谐振器的制备方法
CN106154186B (zh) * 2016-06-20 2020-01-17 瑞声声学科技(常州)有限公司 声表面波磁传感器及其制备方法
DE102019130514B4 (de) * 2019-11-12 2021-09-23 RF360 Europe GmbH Trimmverfahren für einen SAW-Wafer, getrimmte Wafer und getrimmte SAW-Vorrichtungen

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EP1049252A2 (de) 2000-11-02
KR20000077080A (ko) 2000-12-26
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US6789297B2 (en) 2004-09-14

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