US6458494B2 - Etching method - Google Patents

Etching method Download PDF

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Publication number
US6458494B2
US6458494B2 US09/559,079 US55907900A US6458494B2 US 6458494 B2 US6458494 B2 US 6458494B2 US 55907900 A US55907900 A US 55907900A US 6458494 B2 US6458494 B2 US 6458494B2
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Prior art keywords
etching
mask
substrate
etching mask
patterns
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Expired - Fee Related
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US09/559,079
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US20020008080A1 (en
Inventor
Ki Chang Song
Jong Uk Bu
Chil Keun Park
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LG Electronics Inc
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LG Electronics Inc
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Assigned to LG ELECTRONICS INC. reassignment LG ELECTRONICS INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BU, JONG UK, PARK, CHIL KEUN, SONG, KI CHANG
Publication of US20020008080A1 publication Critical patent/US20020008080A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3085—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0335—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks

Definitions

  • the present invention relates to an etching method, and more particularly, to an etching method applicable to a semiconductor device fabrication and an MEMS(Micro-Electro-Mechanical System) process.
  • the etching is an essential process in fabrication of a semiconductor device as well as in fabrication of the MEMS currently under research widely, which occupy great portions of the fabrication processes.
  • an etching mask is always required for separate a portion to be etched from a portion to be protected from the etching.
  • a photoresist thin film, a nitride thin film, such as SiN, an oxide thin film, such as SiO2, and a metal thin film, such as Cr can be used, selectively.
  • a first SiN etching mask layer 2 and the first photoresist layer 3 are formed in succession on the silicon substrate 1 , and a portion of the first SiN etching mask layer 2 is removed by photolithography and etching, to expose a region of the silicon substrate 1 .
  • the first SiN etching mask layer 2 is used as a mask in etching the silicon substrate 1 to an ‘A’ depth in FIG. 1, and the first SiN etching mask layer 2 and the first photoresist layer 3 are removed.
  • FIG. 2B the first SiN etching mask layer 2 is used as a mask in etching the silicon substrate 1 to an ‘A’ depth in FIG. 1, and the first SiN etching mask layer 2 and the first photoresist layer 3 are removed.
  • a second SiN etching mask layer 4 and a second photoresist layer 5 are formed in succession on an entire surface of the substrate 1 , and a portion of the second SiN etching mask layer is removed by photolithography and etching, to expose a region of the silicon substrate 1 .
  • the second SiN etching mask layer 4 is used as a mask in etching the silicon substrate 1 to a depth of ‘B’ in FIG. 1, and the second SiN etching mask layer 4 and the second photoresist layer 5 are removed.
  • a third SiN etching mask layer 6 and a third photoresist layer 7 are used in etching to ‘C’ depth in FIG. 1 in the same method as the above methods, to complete fabrication of a device having different etching depths of ‘A’, ‘B’, and ‘C’ as shown in FIG. 2 G.
  • a first SiN etching mask layer 12 and a first photoresist layer 13 are formed on a silicon substrate 11 , and portions of the first SiN etching mask layer 12 are removed by photolithography and etching, to expose regions of the silicon substrate 1 to be etched as ‘A’, ‘B’ and ‘C’ in FIG. 1 .
  • the first SiN etching mask layer 12 is used as a mask in etching the exposed silicon substrate 11 in overall for the first time to a depth ‘C’ in FIG. 1 which has the shallowest etching depth, and the first SiN etching mask layer 12 and the first photoresist layer 13 are removed.
  • FIG. 3B the first SiN etching mask layer 12 is used as a mask in etching the exposed silicon substrate 11 in overall for the first time to a depth ‘C’ in FIG. 1 which has the shallowest etching depth
  • a second SiN etching mask layer 14 and a second photoresist layer 15 are formed in succession on an entire surface of the substrate 11 , and a portion of the second SiN mask layer 14 is removed by photolithography, to expose the silicon substrate 11 only in the ‘B’ region of FIG. 1 .
  • the second SiN etching mask layer 14 is used as a mask in etching the silicon substrate 11 etched for the first time for the second time, and the second SiN etching mask layer 14 and the second photoresist layer 15 are removed.
  • a third SiN mask layer 16 and a third photoresist layer 17 are used in etching ‘A’ region in FIG. 1 etched for the first time for the second time by a method the same as the foregoing method, to complete fabrication of a device having different etching depths of ‘A’, ‘B’ and ‘C’ as shown in FIG. 3 G.
  • the present invention is directed to an etching method that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.
  • An object of the present invention is to provide an etching method which can reduce a misalignment error of a mask pattern in etching.
  • Another object of the present invention is to provide a simple etching method which permits to etch to a variety of depths by using only one etching mask.
  • the etching method for forming a plurality of trenches or recesses having depths different from one another in a substrate includes the steps of forming an etching mask on the substrate, forming a plurality of patterns in the etching mask corresponding to depths of the plurality of trenches, and etching the substrate using the etching mask having the plurality of patterns formed therein.
  • an etching method including the steps of forming an etching mask on a substrate, etching a first, a second, and a third regions in the etching mask to a first depth on the same time, forming a first mask pattern in the first region, and using the first mask pattern as a mask in etching the second and third regions of the etching mask on the same time to a second depth, removing the first mask pattern, and forming second mask patterns in the first and second regions, etching the third region of the etching mask using the second mask patterns as a mask, to expose the substrate, removing the second mask patterns, and using the etching mask as a mask in etching the exposed substrate to a third depth, etching the second region of the etching mask to expose the substrate, and etching the exposed substrate to a fourth depth using the etching mask, and etching the first region of the etching mask to expose the substrate, and using the etching mask as a mask
  • FIG. 1 illustrates a silicon structure formed by a related art etching method
  • FIGS. 2 A ⁇ 2 G illustrate a first related art example of an etching process for fabricating the silicon structure in FIG. 1;
  • FIGS. 3 A ⁇ 3 G illustrate a second related art example of an etching process for fabricating the silicon structure in FIG. 1;
  • FIG. 4 illustrates overhangs of an etching mask occurred by the related art etching method
  • FIGS. 5A and 5B illustrate an aligned mask pattern and non-aligned mask pattern, respectively
  • FIG. 6 illustrates a silicon structure formed by a wet etching method in accordance with a preferred embodiment of the present invention
  • FIGS. 7 A ⁇ 7 K illustrate sections showing the steps of an etching method for fabricating the structure in FIG. 6 in accordance with a preferred embodiment of the present invention
  • FIG. 8 illustrates a perspective view of a silicon structure formed by a dry etching method in accordance with a preferred embodiment of the present invention
  • FIGS. 9 A ⁇ 9 K illustrate sections showing the steps of an etching method for fabricating the structure in FIG. 8 in accordance with a preferred embodiment of the present invention.
  • the present invention provides an etching method, in which an etching mask formed for the first time is used in the next etching as it is. That is, as shown in FIG. 6, in fabrication of a device having different etch depths ‘A’, ‘B’ and ‘C’, the present invention provides an etching method which permits a simple and precise etching by using, not many etching masks as the case of the related art, but only one etching mask, applicable both to an wet etching and dry etching, and all kinds of wafers, etching solutions, and etching gases.
  • an isotropic or an anisotropic etching of a silicon single crystal is possible depending on selected etching solution, which can be selected according to an etching purpose.
  • HNA(HF+HNO 3 +Acetic Acid) is used as an isotropic etching solution
  • EDP(Ethylenediamine Pyrocatechol Water), TMAH(Tetramethyl Ammonium Hydroxide), or KOH(Potassium Hydroxide) is used as an anisotropic etching solution.
  • an SiN etching mask layer 22 is formed on a silicon substrate 21 , and a plurality of photoresist patterns 23 are formed on the SiN etching mask layer 22 .
  • the first photoresist patterns 23 are used as masks in removing the SiN etching mask layer 22 to a required depth by dry etching. The depth is determined taking a depth in the silicon substrate 21 to be etched in a later step.
  • the first photoresist pattern 23 is removed, a second photoresist pattern is formed in a region to be etched the shallowest the same as the ‘C’ region in FIG.
  • the second photoresist pattern 24 is used as a mask in etching the SiN etching mask layer 22 to a required depth. Then, as shown in FIG. 7D, the second photoresist pattern 24 is removed, a third photoresist pattern 25 is respectively formed in the ‘B’ region and the ‘C’ region in FIG. 6 as shown in FIG. 7E, and the third photoresist patterns 25 are used as masks in dry etching as shown in FIG. 7F, to remove the SiN etching mask layer 22 only from ‘A’ region in FIG. 6, to expose the substrate 21 . And, as shown in FIG.
  • the third photoresist pattern 25 is removed, and the SiN etching mask layer 22 is used as a mask in wet etching the exposed substrate 21 to a depth.
  • the SiN etching mask layer 22 is removed from the ‘B’ region in FIG. 6, to expose the substrate 21 .
  • the SiN etching mask layer 22 is used as a mask in wet etching the exposed substrate 21 to a depth, and the substrate 21 is dry etched on the whole without a photolithography process as shown in FIG. 7J, to remove the SiN etching mask layer 22 from the ‘C’ region in FIG.
  • the SiN etching mask layer 22 is used as a mask again in wet etching the exposed substrate 21 to a depth, to obtain a silicon structure as shown in FIG. 6 .
  • the wet etching 30 wt % KOH water solution is used at a temperature of approx. 80° C.
  • a surface of an ( 100 ) wafer is an ( 100 ) plane
  • a side surface of the ( 100 ) wafer is an ( 111 ) plane, wherein the ( 111 ) plane is tilted by approx. 54.7° from the ( 100 ) plane.
  • a dry etching can make such a vertical side surface available, it is very difficult to conduct the dry etching by only using a photoresist pattern the same as the related art for obtaining the structure in FIG. 8 . Accordingly, a dry etching by a method as shown in FIGS. 7A-7B can make the structure as shown in FIG. 8 available with easy.
  • FIGS. 9 A ⁇ 9 K illustrate sections showing the steps of a process for dry etching a silicon substrate, which are identical to FIGS. 7A 7 K, detailed explanations of which will be omitted.
  • the etching mask layer 22 is formed of ITO(Indium Tin Oxide), and removed by using Cl 2 +BCl 3 gases.
  • the silicon substrate 21 is etched using SF 6 gas and utilizing a high etching selectivity of the silicon substrate 21 over the etching mask layer 22 .
  • the present invention permits to form an SiN thin film as an etching mask only once for conducting etching over three times in formation of a silicon structure having three different depths, which is applicable to a dry etching, the present invention has a wide application.
  • the elimination of an alignment error from respective photolithography by the present invention permits fabrication of a precise structure, to simplify a fabrication process, and to reduce a production cost.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Micromachines (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
US09/559,079 1999-04-29 2000-04-27 Etching method Expired - Fee Related US6458494B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR99-15492 1999-04-29
KR15492/1999 1999-04-29
KR1019990015492A KR100290852B1 (ko) 1999-04-29 1999-04-29 에칭 방법

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030071542A1 (en) * 2001-08-31 2003-04-17 Syunsuke Satoh Etching method, etched product formed by the same, and piezoelectric vibration device, method for producing the same
US6623653B2 (en) * 2001-06-12 2003-09-23 Sharp Laboratories Of America, Inc. System and method for etching adjoining layers of silicon and indium tin oxide
US20040029385A1 (en) * 2002-04-30 2004-02-12 Dirk Manger Semiconductor substrate with trenches of varying depth
US20050142881A1 (en) * 2003-12-30 2005-06-30 Mosel Vitelic, Inc. Mask and method of using the same
US20050244756A1 (en) * 2004-04-30 2005-11-03 Clarner Mark A Etch rate control
US20090068822A1 (en) * 2007-09-11 2009-03-12 Kim Yong-Jin Method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate
US20100184295A1 (en) * 2009-01-16 2010-07-22 Microchip Technology Incorporated Multiple depth shallow trench isolation process
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US20110101538A1 (en) * 2009-11-02 2011-05-05 International Business Machines Corporation Creation of vias and trenches with different depths

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KR100290852B1 (ko) * 1999-04-29 2001-05-15 구자홍 에칭 방법
DE10136016A1 (de) * 2001-07-24 2003-04-03 Bosch Gmbh Robert Verfahren zum Erzeugen vom mikromechanischen Strukturen
DE10154361A1 (de) * 2001-11-06 2003-05-15 Univ Albert Ludwigs Freiburg Verfahren zum Durchführen eines Rapid-Prototyping-Prozesses zur Herstellung von Mikrostrukturen
DE10311059A1 (de) * 2003-03-13 2004-10-07 Infineon Technologies Ag Halbleiterstruktur
US6917093B2 (en) * 2003-09-19 2005-07-12 Texas Instruments Incorporated Method to form shallow trench isolation with rounded upper corner for advanced semiconductor circuits
KR100697283B1 (ko) 2005-03-29 2007-03-20 삼성전자주식회사 반도체 장치의 소자분리 구조물 및 그 형성방법
EP2495212A3 (en) 2005-07-22 2012-10-31 QUALCOMM MEMS Technologies, Inc. Mems devices having support structures and methods of fabricating the same
US20070132056A1 (en) * 2005-12-09 2007-06-14 Advanced Analogic Technologies, Inc. Isolation structures for semiconductor integrated circuit substrates and methods of forming the same
KR101563684B1 (ko) 2008-11-10 2015-10-28 삼성전자주식회사 임프린트용 마스터 및 그 제조 방법
CN103258843B (zh) * 2013-05-30 2016-06-15 中国电子科技集团公司第十三研究所 用于太赫兹肖特基二极管的多孔衬底
CN106477514B (zh) * 2015-08-28 2018-03-30 中芯国际集成电路制造(上海)有限公司 Mems器件及其形成方法
US10950643B2 (en) 2016-07-06 2021-03-16 Sony Semiconductor Solutions Corporation Imaging device, method for manufacturing imaging device, and electronic device
CN106229812B (zh) * 2016-08-31 2018-11-09 潍坊华光光电子有限公司 一种具有不同深度沟槽的GaAs基激光器的制备方法
CN111208658A (zh) * 2020-03-02 2020-05-29 合肥鑫晟光电科技有限公司 一种转印版及其制备方法、显示基板、显示面板
CN114551226A (zh) * 2020-11-26 2022-05-27 华为技术有限公司 制备具有不同深度沟槽器件的方法及系统

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Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6623653B2 (en) * 2001-06-12 2003-09-23 Sharp Laboratories Of America, Inc. System and method for etching adjoining layers of silicon and indium tin oxide
US6939475B2 (en) * 2001-08-31 2005-09-06 Daishinku Corporation Etching method, etched product formed by the same, and piezoelectric vibration device, method for producing the same
US7485238B2 (en) 2001-08-31 2009-02-03 Daishinku Corporation Etching method, etched product formed by the same, and piezoelectric vibration device, method for producing the same
US20050194352A1 (en) * 2001-08-31 2005-09-08 Syunsuke Satoh Etching method, etched product formed by the same, and piezoelectric vibration device, method for producing the same
US20030071542A1 (en) * 2001-08-31 2003-04-17 Syunsuke Satoh Etching method, etched product formed by the same, and piezoelectric vibration device, method for producing the same
US6932916B2 (en) * 2002-04-30 2005-08-23 Infineon Technologies Ag Semiconductor substrate with trenches of varying depth
US20040029385A1 (en) * 2002-04-30 2004-02-12 Dirk Manger Semiconductor substrate with trenches of varying depth
US20050142881A1 (en) * 2003-12-30 2005-06-30 Mosel Vitelic, Inc. Mask and method of using the same
US20050244756A1 (en) * 2004-04-30 2005-11-03 Clarner Mark A Etch rate control
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US20090068822A1 (en) * 2007-09-11 2009-03-12 Kim Yong-Jin Method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate
US7708832B2 (en) * 2007-09-11 2010-05-04 Siltron Inc. Method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate
US20100184295A1 (en) * 2009-01-16 2010-07-22 Microchip Technology Incorporated Multiple depth shallow trench isolation process
US8853091B2 (en) * 2009-01-16 2014-10-07 Microchip Technology Incorporated Method for manufacturing a semiconductor die with multiple depth shallow trench isolation
US20110101538A1 (en) * 2009-11-02 2011-05-05 International Business Machines Corporation Creation of vias and trenches with different depths
US8227339B2 (en) * 2009-11-02 2012-07-24 International Business Machines Corporation Creation of vias and trenches with different depths
US8703604B2 (en) 2009-11-02 2014-04-22 International Business Machines Corporation Creation of vias and trenches with different depths

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KR20000067571A (ko) 2000-11-25
EP1049143A2 (en) 2000-11-02
KR100290852B1 (ko) 2001-05-15
US20020008080A1 (en) 2002-01-24
JP2000340553A (ja) 2000-12-08
JP3363131B2 (ja) 2003-01-08
EP1049143A3 (en) 2000-12-27

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