US20140048824A1 - Light-emitting device - Google Patents

Light-emitting device Download PDF

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Publication number
US20140048824A1
US20140048824A1 US13/743,030 US201313743030A US2014048824A1 US 20140048824 A1 US20140048824 A1 US 20140048824A1 US 201313743030 A US201313743030 A US 201313743030A US 2014048824 A1 US2014048824 A1 US 2014048824A1
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United States
Prior art keywords
light
emitting device
optoelectronic
supporting structure
units
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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US13/743,030
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English (en)
Inventor
Min Hsun HSIEH
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epistar Corp
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Priority to US13/743,030 priority Critical patent/US20140048824A1/en
Priority to TW102128791A priority patent/TWI594458B/zh
Priority to TW106121320A priority patent/TWI635625B/zh
Priority to TW107120445A priority patent/TW201834267A/zh
Priority to EP13829787.4A priority patent/EP2886932B1/en
Priority to CN201911323485.7A priority patent/CN111102484B/zh
Priority to JP2015526857A priority patent/JP2015525001A/ja
Priority to PCT/CN2013/000956 priority patent/WO2014026468A1/zh
Priority to EP20213871.5A priority patent/EP3812648B1/en
Priority to CN201911323988.4A priority patent/CN111102485B/zh
Priority to KR1020177007340A priority patent/KR102015005B1/ko
Priority to KR1020147036324A priority patent/KR20150022901A/ko
Priority to CN201380030510.7A priority patent/CN104364577A/zh
Priority to KR1020197024452A priority patent/KR102121160B1/ko
Publication of US20140048824A1 publication Critical patent/US20140048824A1/en
Priority to US14/933,816 priority patent/US9825012B2/en
Priority to JP2016186929A priority patent/JP2017017334A/ja
Priority to US15/730,323 priority patent/US10083945B2/en
Priority to US16/110,293 priority patent/US10319703B2/en
Priority to US16/436,445 priority patent/US10593655B2/en
Priority to US16/794,861 priority patent/US10720414B2/en
Priority to US16/930,860 priority patent/US10886262B2/en
Abandoned legal-status Critical Current

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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K2/00—Non-electric light sources using luminescence; Light sources using electrochemiluminescence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • F21S2/005—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction of modular construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V3/00—Globes; Bowls; Cover glasses
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21W—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO USES OR APPLICATIONS OF LIGHTING DEVICES OR SYSTEMS
    • F21W2121/00—Use or application of lighting devices or systems for decorative purposes, not provided for in codes F21W2102/00 – F21W2107/00
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2101/00—Point-like light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2107/00—Light sources with three-dimensionally disposed light-generating elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the application relates to a light-emitting device, and more particularly, to a light-emitting device having optoelectronic units and a transparent structure having cavities configured to accommodate at least one of the optoelectronic units.
  • Incandescent lamps are commonly used as light sources for both residential and commercial facilities. However, incandescent lamps are inefficient because 90% of the input energy is lost primarily in the form of heat or infrared energy.
  • Compact fluorescent lamps are alternative to incandescent lamps. CFL is more effective at converting electricity into light, but it contains toxic materials which lead to environmental pollution.
  • One solution to improve the efficiency of lamps is to use solid state devices such as light-emitting diode (LED) to produce the light.
  • LED light-emitting diode
  • the light-emitting diode is a solid state semiconductor device.
  • a structure of the light-emitting diode (LED) comprises a p-type semiconductor layer, an n-type semiconductor layer, and a light-emitting layer.
  • the light-emitting layer is formed between the p-type semiconductor layer and the n-type semiconductor layer.
  • the structure of the LED generally comprises III-V group compound semiconductor such as gallium phosphide, gallium arsenide, or gallium nitride.
  • the light-emitting principle of the LED is the transformation of electrical energy to optical energy by applying electrical current to the p-n junction to generate electrons and holes. Then, the LED emits light when the electrons and the holes combine.
  • a light-emitting device of an embodiment of the present application comprises optoelectronic units; a transparent structure having cavities configured to accommodate at least one of the optoelectronic units; and a conductive element connecting at least two of the optoelectronic units.
  • FIG. 1A illustrates a cross-sectional view of an optoelectronic unit disclosed in one embodiment of the present application
  • FIG. 1B illustrates a top view of the optoelectronic unit of FIG. 1A without showing a bonding pad
  • FIG. 1C illustrates a top view of the optoelectronic unit of FIG. 1A ;
  • FIG. 2A illustrates a cross-sectional view of an optoelectronic unit disclosed in one embodiment of the present application
  • FIG. 2B illustrates a top view of the optoelectronic unit of FIG. 2A ;
  • FIG. 3A illustrates a cross-sectional view of an optoelectronic unit disclosed in one embodiment of the present application
  • FIG. 3B illustrates a top view of the optoelectronic unit of FIG. 3A ;
  • FIGS. 4A-4C illustrates a manufacturing method of an optoelectronic element disclosed in one embodiment of the present application
  • FIG. 5A illustrates a cross-sectional view of an optoelectronic element disclosed in one embodiment of the present application
  • FIG. 5B illustrates a cross-sectional view of an optoelectronic element disclosed in one embodiment of the present application
  • FIG. 5C illustrates a cross-sectional view of an optoelectronic element disclosed in one embodiment of the present application
  • FIG. 6A is a diagram illustrating a light-emitting device including a plurality of optoelectronic elements in accordance with an embodiment of the present application
  • FIG. 6B illustrates a cross-sectional view of the light-emitting device along X-X′ line of FIG. 6A ;
  • FIG. 6C illustrates a cross-sectional view of the light-emitting device along X-X′ line of FIG. 6A ;
  • FIG. 6D illustrates a cross-sectional view of the light-emitting device along X-X′ line of FIG. 6A ;
  • FIG. 6E is a diagram illustrating a light-emitting device including a plurality of optoelectronic elements in accordance with an embodiment of the present application
  • FIG. 7 illustrates a front view of a light bulb in accordance with an embodiment of the present application
  • FIGS. 8A-8B , 9 A- 9 B, 10 A- 10 B, 11 A- 11 D, 12 A- 12 B, 13 A-B, 14 A- 14 B, 15 , 16 and 17 illustrate a manufacturing method of a light-emitting device in accordance with an embodiment of the present application
  • FIG. 18 illustrates a top view of an optoelectronic package in accordance with an embodiment of the present application
  • FIG. 19 illustrates a cross-sectional view of a light tube in accordance with an embodiment of the present application
  • FIGS. 20A-20B illustrate an enlarged perspective view of a light tube in accordance with an embodiment of the present application
  • FIGS. 21A-21B illustrate a cross-sectional view of a light-emitting device in accordance with an embodiment of the present application
  • FIGS. 22A-22B illustrate a cross-sectional view of a light tube in accordance with an embodiment of the present application
  • FIG. 23 illustrates a perspective view of a light bulb in accordance with an embodiment of the present application
  • FIG. 24 illustrates a perspective view of a light bulb in accordance with an embodiment of the present application.
  • FIG. 25 illustrates a perspective view of a light bulb in accordance with an embodiment of the present application.
  • FIG. 1A illustrates a cross-sectional view of an optoelectronic unit 1 disclosed in one embodiment of the present application.
  • the optoelectronic unit 1 has a bottom surface S 1 with an area smaller than 50 mil 2 , for example, the area is about 4 mil ⁇ 6 mil or 2 mil ⁇ 5 mil.
  • the optoelectronic unit 1 includes a substrate 101 and a light-emitting structure 102 formed on the substrate 101 .
  • the light-emitting structure 102 includes a first semiconductor layer 102 a having a first conductivity type; a second semiconductor layer 102 c having a second conductivity type; and a light-emitting layer 102 b formed between the first semiconductor layer 102 a and the second semiconductor layer 102 c .
  • the material of the light-emitting structure 102 comprises III-V group semiconductor material.
  • the optoelectronic unit 1 is capable of emitting a red light, a green light, or a blue light.
  • a first bonding pad 104 is formed on the passivation layer 103 and electrically connected to the first semiconductor layer 102 a .
  • a second bonding pad 105 is formed on the light-emitting structure 102 and electrically connected to the second semiconductor layer 102 c .
  • a passivation layer 103 is formed on one or more surfaces of the light-emitting structure 102 and made of one or more dielectric materials, such as SiO 2 or Si 3 N 4 . The passivation layer 103 is used to electrically separate the first bonding pad 104 and the second bonding pad 105 from each other.
  • FIG. 1B illustrates a top view of the optoelectronic unit 1 without showing the first bonding pad 104 and the second bonding pad 105 of FIG. 1A .
  • FIG. 1C illustrates a top view of the optoelectronic unit 1 as shown in FIG. 1A .
  • An area sum of a top surface 104 s of the first bonding pad 104 and a top surface 105 s of the second bonding pad 105 is at least 30% above of the area of the bottom surface S 1 of the optoelectronic unit 1
  • FIG. 2A illustrates a cross-sectional view of an optoelectronic unit 2 disclosed in one embodiment of the present application.
  • the optoelectronic unit 2 has a bottom surface S 1 with an area smaller than 80 mil 2 , for example, the area is about 4 mil ⁇ 6 mil or 2 mil ⁇ 5 mil.
  • the optoelectronic unit 2 further includes a first extension pad 204 , a second extension pad 205 , and a passivation layer 203 .
  • the first extension pad 204 and the second extension pad 205 can be firmed on the first bonding pad 104 and the second bonding pad 105 respectively.
  • the passivation layer 203 which can be made of one or more dielectric materials, such as SiO 2 or Si 3 N 4 , is used to electrically separate the first extension pad 204 and the second extension pad 205 front each other.
  • FIG. 2B illustrates a top view of the optoelectronic unit 2 of FIG. 2A .
  • a top surface 204 s of the first extension pad 204 is greater than the top surface 104 s of the first bonding pad 104 .
  • a top surface 205 s of the second extension pad 205 is larger than the top surface 105 s of the second bonding pad 105 .
  • An area sum of the top surface 204 s of the first extension pad 204 and the top surface 205 s of the second extension pad 205 is at least 50% above of the area of the bottom surface S 1 of the optoelectronic unit 2 .
  • FIG. 3A illustrates a cross-sectional view of an optoelectronic unit 3 disclosed in one embodiment of the present application.
  • the optoelectronic unit 3 has a bottom surface S 1 with an area smaller than 50 mil 2 , for example, the area is about 4 mil ⁇ 6 mil or 2 mil ⁇ 5 mil.
  • the optoelectronic unit 3 includes a substrate 101 and a light-emitting structure 102 formed on the substrate 101 .
  • the material of the light-emitting structure 102 comprises III-V group semiconductor material.
  • the optoelectronic unit 3 is capable of emitting a red light, a green light, or a blue light.
  • the light-emitting structure 102 includes a first semiconductor layer 102 a having the first conductivity type, a second semiconductor layer 102 c having the second conductivity type, and a light-emitting layer 102 b formed between the first semiconductor layer 102 a and the second semiconductor layer 102 c .
  • the optoelectronic unit 3 further includes a passivation layer 103 formed on one or more surfaces of the light-emitting structure 102 and made of one or more dielectric materials, such as SiO 2 or Si 3 N 4 .
  • a first electrode pad 304 and a second electrode pad 305 are formed on the same side of the substrate 101 and electrically connected to the first semiconductor layer 102 a and the second semiconductor layer 102 c respectively. The first electrode pad 304 and the second electrode pad 305 are electrically separated from each other by the passivation layer 103 .
  • FIG. 3B illustrates a top view of the optoelectronic unit 3 of FIG. 3A .
  • An area sum of a top surface 304 s of the first electrode pad 304 and a top surface 305 s of the second electrode pad 305 is at least 50% above of the area of the bottom surface S 1 of the optoelectronic unit 3 .
  • the first bonding pad 104 and the second bonding pad 105 can function as an electrical connection path with an external power supply (not shown).
  • the first extension pad 204 and the second extension pad 205 as shown in FIG. 21 or the first electrode pad 304 and the second electrode pad 305 , as shown in FIG. 3B , can have function(s) similar to the first bonding pad 104 and the second bonding pad 105 , respectively.
  • the first bonding pad 104 as an example, if the top surface 104 s of the first bonding pad 104 is large enough, it would be easier to connect or align the optoelectronic unit 1 to the external structure, for example, the external power supply.
  • the first extension pad 204 formed on the first bonding pad 104 can further enlarge the connection area, such as the top surface 204 s , so that the optoelectronic unit 2 can have even larger alignment tolerance than the optoelectronic unit 1 . Accordingly, the area of the top surface 304 s of the first electrode pad 304 can be approximately similar to that of the top surface 204 s of the first extension pad 204 , and the area of the top surface 305 s of the second electrode pad 305 can also be approximately similar to that of the top surface 205 s of the second extension pad 205 .
  • FIGS. 4A-4C illustrate a manufacturing method of an optoelectronic element 4 disclosed, in one embodiment of the present application.
  • a plurality of optoelectronic units which can be one or more kinds of the optoelectronic unit 1 , 2 , or 3 described above, can be provided on a temporary carrier 10 .
  • the material of the temporary carrier 10 can include one of conductive material and insulating material.
  • the conductive material includes carbonaceous material, composite material, metal, semiconductor, or any combination thereof.
  • the carbonaceous material is such as Diamond Like Carbon (DLC), graphite or carbon fiber.
  • the composite material is such as Metal Matrix Composite (MMC). Ceramic Matrix Composite (CMC) or Polymer Matrix Composite (PMC).
  • the semiconductor is such as Si, ZnSe, GaAs, SiC, GaP, GaAsP, ZnSe, InP, LiGaO 2 , or LiAlO 2 .
  • the metal is such as Ni, Cu, or Al.
  • the insulating material includes organic material, inorganic material, or any combination thereof.
  • the organic material is such as epoxy, polyimide (PI), BCB, perfluorocyclobutane (PFCB), Su8, acrylic resin, polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, or fluorocarbon polymer.
  • the inorganic material is such as sapphire, ZnO, diamond, glass, quartz, or AIN.
  • a bonding layer 12 can be further provided to bond the plurality of optoelectronic units 3 to the temporary carrier 10 .
  • Each of the plurality of optoelectronic units 3 can include a light-emitting diode (LED) bare chip having a first electrode pad 304 and a second electrode pad 305 .
  • the bonding layer 12 can include one or more adhesive materials.
  • the adhesive material can be an insulating material, a UV tape, or a thermal release tape.
  • the insulating material includes but not limited to benzocyclobutene (BCB), Su8, epoxy, or spin-on-glass (SOG).
  • the optoelectronic units 3 can be encapsulated by a first supporting structure 16 as shown in FIG. 4B .
  • the first supporting structure 16 can be a transparent structure, primarily constructed of one or more of organic material or inorganic material.
  • the organic material is such as epoxy, polyimide (PI), BCB, perfluorocyclobutane (PFCB), Su8, acrylic resin, polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, or fluorocarbon polymer.
  • the inorganic material is such as glass, Al 2 O 3 , STNR, or SOG.
  • the organic material or inorganic, material can be filled in a space 16 t between two adjacent optoelectronic units 3 .
  • the first supporting structure 16 covering the optoelectronic units 3 can hold and support the optoelectronic units 3 , and enhance the mechanical strength of the optoelectronic units 3 .
  • a surface S 3 of the first supporting structure 16 can be a smooth surface or a rough surface.
  • a second supporting structure 18 is further formed on the first supporting structure 16 to strengthen the support of the optoelectronic unit 3 and the first supporting structure 16 .
  • the second supporting structure 18 can be a transparent structure including one material different from that of the first supporting structure 16 , or has hardness greater than that of the first supporting structure 16 .
  • the temporary carrier 10 and the bonding layer 12 are removed to expose portions of the plurality of optoelectronic units 3 and the first supporting structure 16 after the first supporting structure 16 or the second supporting structure 18 is formed.
  • a plurality of conductive structures 40 which are located on a position (not shown) opposite to the second supporting structure 18 , are then formed on the exposed portions of the plurality of optoelectronic units 3 and the first supporting structure 16 .
  • the conductive structure 40 can be connected to the first electrode pad 304 and the second electrode pad 305 of the optoelectronic units 3 respectively.
  • Each conductive structure 40 has a top surface area (not shown) greater than either of the first bonding pad 104 and the second bonding pad 105 of FIG.
  • the plurality of optoelectronic elements 4 is separated from each other by dicing along openings 17 , as shown in FIG. 4C . At least one of the length, the width and the area of the optoelectronic element 4 is within the same order of the optoelectronic unit 1 , 2 , or 3 .
  • FIG. 5A illustrates a cross-sectional view of an optoelectronic element 4 a .
  • the optoelectronic element 4 a includes an optoelectronic unit 1 , a first supporting structure 16 formed on the optoelectronic unit 1 , and a second supporting structure 18 formed on the first supporting structure 16 .
  • the first supporting structure 16 can be formed in a shape surrounding the optoelectronic unit 1 .
  • a first conductive structure 401 and a second conductive structure 402 are formed on the optoelectronic unit 1 , and respectively connected to the first bonding pad 104 and the second bonding pad 105 of the optoelectronic unit 1 .
  • a top surface area 401 s of the first conductive structure 401 is larger than the top surface 104 s of the first bonding pad 104
  • a top surface area 402 s of the second conductive structure 402 is larger than the top surface 105 s of the second bonding pad 105 .
  • the passivation layer 103 which is disposed on the light-emitting structure 102 , can isolate the first bonding pad 104 and the second bonding pad 105 , and protect the light-emitting structure 102 .
  • a reflective layer 280 can be formed on the optoelectronic unit 1 and the first supporting structure 16 .
  • the reflective layer 280 can be made of one or more reflective materials, such as dielectrically material, for example, SiO 2 , Si 3 N 4 , or metal oxide, such as titanium dioxide or other white substance. In an example of the present application, the reflective layer 280 can be a single layer or a stack.
  • a ratio of a volume of the optoelectronic element 4 a and a volume of the optoelectronic unit 1 is between 1.2:1 and 10:1, preferably between 2:1 and 5:1.
  • the second supporting structure 18 has a first width W 1 .
  • the optoelectronic unit 1 has a second width W 2 .
  • the first width W 1 is larger than the second width W 2 , for example, the first width W 1 is at least 1.5 times the second width W 2 .
  • the first distance d 1 between the first bonding pad 104 and the second bonding pad 105 is larger than the third distance d 3 between the first conductive structure 401 and the second conductive structure 402 .
  • FIG. 5B illustrates a cross-sectional view of an optoelectronic element 4 b .
  • the optoelectronic element 4 b includes an optoelectronic unit 2 , a first supporting structure 16 formed on the optoelectronic unit 2 , and a second supporting structure 18 formed on the first supporting structure 16 .
  • the first supporting structure 16 can be formed in a shape surrounding the optoelectronic unit 2 .
  • a first conductive structure 401 and a second conductive structure 402 are formed on the optoelectronic unit 2 , and connected to the first extension pad 204 and the second extension pad 205 , respectively.
  • a reflective layer 280 can be formed on the optoelectronic unit 2 and the first supporting structure 16 .
  • the reflective layer 280 can be made of one or more reflective materials, such as dielectrically material, for example, SiO 2 , Si 3 N 4 , or metal oxide, such as titanium dioxide or other white substance.
  • the reflective layer 280 can be a single layer or a stack.
  • the first conductive structure 401 has a top surface area 401 s larger than or equal to a top surface area 204 s of the first extension pad 204
  • the second conductive structure 402 has a top surface area 402 s larger than or equal to a top surface area 205 s of the second extension pad 205 .
  • a ratio of a volume of the optoelectronic element 4 b and a volume of the optoelectronic unit 2 is between 1.2:1 and 10:1, preferably between 2:1 and 5:1.
  • the second supporting structure 18 has a first width W 1
  • the optoelectronic unit 2 has a second width W 2 .
  • the first width W 1 is larger than the second width W 2 , for example, the first width W 1 is at least 1.5 times the second width W 2 .
  • a first distance d 1 between the first bonding pad 104 and the second bonding pad 105 is larger than a second distance d 2 between the first extension pad 204 and the second extension pad 205 , and further larger than a third distance d 3 between the first conductive structure 401 and the second conductive structure 402 .
  • FIG. 5B is only illustrative but not limitative.
  • the second distance d 2 can be equal to, larger, or smaller than the third distance d 3 .
  • FIG. 5C illustrates a cross-sectional view of an optoelectronic element 4 c .
  • the optoelectronic element 4 c includes an optoelectronic unit 3 , a first supporting structure 16 formed on the optoelectronic unit 3 , and a second supporting structure 18 formed on the first supporting structure 16 .
  • the optoelectronic unit 3 can be surrounded by the first supporting structure 16 .
  • a first conductive structure 401 and a second conductive structure 402 are formed on the optoelectronic unit 3 , and connected to the first electrode pad 304 and the second electrode pad 305 , respectively.
  • a reflective layer 280 can be formed on the optoelectronic unit 3 and the first supporting structure 16 .
  • the reflective layer 280 can be made of one or more reflective materials, such as dielectrically material, for example, SiO 2 , Si 3 N 4 , or metal oxide, such as titanium dioxide or other white substance.
  • the first conductive structure 401 has a top surface area 401 s larger than or equal to a top surface area 304 s of the first electrode pad 304
  • the second conductive structure 402 has a top surface area 402 s larger than or equal to a top surface area 305 s of the second electrode pad 305 .
  • a ratio of a volume of the optoelectronic element 4 c and a volume of the optoelectronic unit 3 is between 1.2:1 and 10:1, preferably between 2:1 and 5:1.
  • the second supporting structure 18 has a first width W 1 and the optoelectronic unit 3 has a second width W 2 .
  • the first width W 1 is larger than the second width W 2 , for example, the first width W 1 is at least 1.5 times the second width W 2 .
  • a distance d 4 between the first electrode pad 304 and the second electrode pad 305 is larger than or equal to a third distance d 3 between the first conductive structure 401 and the second conductive structure 402 .
  • FIG. 5C is only illustrative but not limitative.
  • FIG. 6A illustrates a light-emitting device 5 a in accordance with art embodiment of the present application.
  • the light-emitting device 5 a comprises a supporting structure 51 .
  • the supporting structure 51 can be an opaque structure or a transparent structure having an average light transmittance above 60%, preferably above 70% between visible light regions.
  • the material of the transparent structure comprises organic material, inorganic material, or both thereof.
  • the organic material comprises plastics.
  • the inorganic material comprises glass, quartz, Al 2 O 3 , diamond, or the combination thereof.
  • the supporting structure 51 can be a flexible structure comprising flexible material, such as flexible glass or flexible plastics, and the flexible structure can be bent into any shape to achieve a desired emission pattern.
  • the supporting structure 51 is thermally stable and has a heat resistance.
  • a melting point of the supporting structure 51 is higher than an operation temperature of the light-emitting device 5 a .
  • the heat generated during the operation of the light-emitting device 5 a does not deform or melt down the supporting structure 51 .
  • One or more kinds of the optoelectronic unit 1 , 2 , or 3 , or the optoelectronic elements 4 a , 4 b , or 4 c described above can be applied to the light-emitting device 5 a and formed on the supporting structure 51 with conductive material or non-conductive material.
  • the conductive material comprises metal or metal oxides such as indium tin oxide (ITO), cadmium tin oxide (CTO), antimony tin oxide, indium zinc oxide, zinc aluminum oxide, or zinc tin oxide.
  • the non-conductive material comprises epoxy, polyimide (PI), BCB, perfluorocyclobutane (PFCB), Su8, polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, or fluorocarbon polymer.
  • the optoelectronic unit 1 , 2 , or 3 , or the optoelectronic elements 4 a , 4 b , or 4 c can also be formed on the supporting structure 51 with an anisotropic conductive film (ACF).
  • ACF anisotropic conductive film
  • Ti the supporting structure 51 is transparent, one or more kinds of the optoelectronic unit 1 , 2 , or 3 , or the optoelectronic element 4 a , 4 b , or 4 c described above can be embedded into the supporting structure with the manufacturing method described in FIGS. 4A-4C .
  • a plurality of bonding pads such as solder bumps can be formed on a top surface of the supporting structure at pre-determined positions, and one or more kinds of the optoelectronic unit 1 , 2 , or 3 , or the optoelectronic element 4 a , 4 b , or 4 c described above can be flipped and bonded to the plurality of bonding pads.
  • a plurality of bonding pads such as solder bumps can be formed on a top surface of the supporting structure at pre-determined positions, and one or more kinds of the optoelectronic unit 1 , 2 , or 3 , or the optoelectronic element 4 a , 4 b , or 4 c described above can be flipped and bonded to the plurality of bonding pads.
  • FIG. 6A illustrates an example of the optoelectronic units 3 being embedded in the supporting structure 51 .
  • the light-emitting device 5 a includes a plurality of optoelectronic units 3 embedded in the supporting structure 51 , wherein the supporting structure 51 is a transparent structure with one or more cavities (not shown) accommodating the plurality of optoelectronic unit 3 .
  • the plurality of optoelectronic units 3 is electrically coupled together in a series connection by a conductive element 53 , wherein the material of the conductive element 53 can be metal.
  • the conductive element 53 has a portion 531 arranged on the supporting structure 51 between two of the cavities.
  • the conductive element 53 can be made by metal wiring, chemical deposition, or electrical plating.
  • a first conductive structure and a second conductive structure can be optionally formed on the optoelectronic units 1 , 2 , or 3 to enlarge alignment tolerance between the conductive element 53 and the optoelectronic units 1 , 2 , or 3 .
  • one optoelectronic unit 3 is embedded in one cavity, a first conductive structure 501 and a second conductive structure 502 are respectively formed on the first electrode pad 304 and the second electrode pad 305 , shown in FIG.
  • the conductive element 53 can form a circuit electrically connecting the first conductive structure 401 , shown in FIGS. 5A-5C , of one optoelectronic element 4 a , 4 b , or 4 c with the second conductive structure 402 , shown in FIGS. 5A-5C , of another optoelectronic element 4 a , 4 b , or 4 c.
  • the conductive element 53 can be used to form a circuit electrically connecting the optoelectronic unit 1 , 2 , or 3 , or the optoelectronic element 4 a , 4 b , or 4 c .
  • the circuit has a first terminal 55 and a second terminal 57 arranged on one end of the supporting structure 51 to be electrical contact points, which are denoted by symbols of ‘+’ and ‘ ⁇ ’, can be electrically connected to a power supply (not shown).
  • FIG. 6B illustrates a cross-sectional view of the light-emitting device 5 a having the optoelectronic unit 3 along X-X′ line shown in FIG. 6A .
  • a transparent structure such as a bonding layer 52 , including one wavelength converting, material, such as yellow phosphor or dye, can be formed between the supporting structure 51 and the optoelectronic unit 3 .
  • the conductive elements 53 are formed on the first conductive structure 501 and the second conductive structure 502 to electrically connected with the optoelectronic unit 3 with the method described above.
  • the supporting structure 51 can have one that surface, such as the surface S 5 shown in FIG. 6B , or at least one rough surface having a protrusion such as the surface S 7 shown in FIG. 6C , or a curved surface S 9 shown in FIG. 6D .
  • the surface S 7 can have a zigzag configuration.
  • the curved surface S 9 can have a hemispherical contour.
  • FIG. 6E illustrates a light-emitting device 5 c in accordance with a further embodiment of the present application.
  • One or more kinds of the optoelectronic unit 1 , 2 , 3 , the optoelectronic elements 4 a , 4 b , or 4 c described above can be applied to the light-emitting device 5 c .
  • the light-emitting device 5 c includes a plurality of optoelectronic units 3 which can be electrically coupled together in series, parallel, or a combination thereof by the conductive element 53 .
  • the conductive element 53 is electrically connected to the first conductive structure 501 and the second conductive structure 502 of each optoelectronic unit 3 . Therefore, the optoelectronic units 3 are connected with each other by the conductive element 53 . In addition, heat generated by the optoelectronic elements can be dissipated via the conductive element 53 .
  • the plurality of optoelectronic unit 3 as an example in one embodiment, which is not intended to limit the scope of the present application, and other examples, such as the plurality of optoelectronic unit 1 , 2 , the plurality of optoelectronic elements 4 a , 4 b or 4 c , can be applied in the same method.
  • the plurality of optoelectronic unit 3 is separated from each other at an appropriate spacing, and optionally arranged in as cluster configuration.
  • the spacing between the optoelectronic units 3 can be fixed, non-fixed, or variable.
  • the spacing between the optoelectronic units 3 near the circumstance of the supporting structure 51 is larger than that of the optoelectronic units 3 near the center of the supporting structure 51 from the diagram of the light-emitting device 5 a shown in FIG. 6A or the light-emitting device 5 c shown in FIG. 6E .
  • the plurality of optoelectronic units 3 is arranged in a shape of a perspective view, including but not limited to, as blade type, a linear type, a dispersive type, or a combination thereof.
  • the supporting structure 51 comprises a root having the first terminal 55 and the second terminal 57 , a stem connected to the root and extended along a first direction, and a plurality of branches connected to the stem and extended along one or more directions different from the first direction.
  • the light-emitting device 5 a or 5 c of the present application can be constructed and arranged for different uses, for example, light bulb, emergency light, PAR light, automotive light, street lighting, subway lighting or indoor lighting.
  • FIG. 7 illustrates a front view of a light bulb 6 in accordance with an embodiment of the present application.
  • One or more kinds of the light-emitting device 5 a and 5 c described above can be applied to the light bulb 6 .
  • the light bulb 6 includes one light-emitting device 5 a , as socket 65 electrically connected to the light-emitting device 5 a , a contact member 64 , and a cover 62 .
  • the light-emitting devices 5 a can be a tube having a dispersive configuration or a linear arrangement.
  • the dispersive configuration is such as blade-like shape, flower-like shape, branch-like shape, vein-like shape, cylinder shape, U-shape, or arc shape.
  • the linear arrangement is such as a rectangular shape.
  • the light-emitting device 5 a can be plugged into the socket 65 .
  • In the socket 65 there are circuits for electrically connecting the light-emitting device with an electrical power (not shown).
  • the cover 62 can be formed in a shape such as globe, tube, or candle.
  • the cover 62 also can be formed in a shape referred to American National Standard Institute (ANSI) standards, such as A series, B series, S series, F series, and G series.
  • the material of the cover 62 comprises glass or plastic.
  • An air, a transparent material, or both thereof can be filled in the cover 62 .
  • the contact member 64 has a screw thread 63 and a base pin 66 which are functioned as two terminals for connecting with an AC power (not shown).
  • the screw thread 63 can be also used to fasten the light bulb 6 into a socket (not shown).
  • the contact member 64 can be configured to it within and electrically contact with a standard electrical socket such as E40 socket, E27 socket, E26 socket, and E14 socket.
  • the contact member 64 can accommodate a driver (not shown) having circuits for rectification, and overload protection.
  • FIGS. 8A-15 illustrate steps of manufacturing a light-emitting device 7 f shown in FIG. 16 or a light-emitting, device 7 g shown in FIG. 17 in accordance with embodiments of the present application.
  • the optoelectronic unit 3 is referred in the following description, but one or more kinds of the optoelectronic units 1 , 2 , or 3 , or the optoelectronic elements 4 a , 4 b , or 4 c described above can be applied to the steps.
  • FIG. 8A illustrates a top view of a plurality of optoelectronic units 3 formed on a temporary substrate 70 .
  • FIG. 8B illustrates a cross-sectional view along line Y-Y′ in FIG. 8A .
  • several optoelectronic units 3 with a first electrode pad 304 and a second electrode pad 305 formed thereon can be formed on the temporary substrate 70 with a first pitch P 1 .
  • the optoelectronic units 3 can be grown on a growth substrate with a first pitch P 1 .
  • the optoelectronic units 3 are transferred to a temporary carrier 100 .
  • the optoelectronic units 3 can be transferred from the temporary substrate 70 to predetermined positions of the temporary carrier 100 by manual pick-up or mechanical pick-up.
  • the optoelectronic units 3 an also be transferred to the temporary carrier 100 by an adhesive material.
  • the optoelectronic units 3 can be transferred one by one, or in a batch.
  • FIG. 9A illustrates a top view of a plurality of optoelectronic units 3 formed on a temporary carrier 100 in accordance with an embodiment of the present application.
  • FIG. 9B illustrates a cross-sectional view along line Z-Z′ shown in FIG. 9A .
  • FIG. 9B illustrates that the optoelectronic units 3 are transferred to the temporary carrier 100 from a temporary substrate 70 or the growth substrate in accordance with another embodiment of the present application.
  • the temporary carrier 100 includes a material similar to that mentioned in the paragraph of the temporary carrier 10 .
  • the temporary carrier 100 can be a tape including one or more adhesive materials to connect the optoelectronic units 3 .
  • the optoelectronic units 3 with a first electrode pad 304 and a second electrode pad 305 formed thereon are formed on the temporary carrier 100 with the second pitch P 2 which is larger than the first pitch P 1 .
  • FIG. 10A illustrates a top view of optoelectronic units 3 having a first electrode pad 304 and a second electrode pad 305 formed on a first supporting structure 73 in accordance with an embodiment of the present application.
  • FIG. 10B illustrates a cross-sectional view along line A-A′ shown in FIG. 10A .
  • the first supporting structure 73 can be made having cavities configured to accommodate at least one of the optoelectronic units 3 .
  • the first supporting structure 73 covering the optoelectronic units 3 can hold and support the optoelectronic units 3 and enhance the mechanical strength of the optoelectronic units 3 .
  • the first supporting structure 73 can be a transparent structure made of one or more transparent materials.
  • the transparent material can be made of one or more of organic material or inorganic material.
  • the organic material is such as epoxy, polyimide (PI), BCB, pertluorocyclobutane (PFCB), Su8, acrylic resin, polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, or fluorocarbon polymer.
  • the inorganic material is such as glass, Al 2 O 3 , SINR, or SOG. As shown in FIG. 10A , a wavelength converting layer 111 can be formed around each optoelectronic unit 3 .
  • a wavelength converting layer 111 ′ can be formed in a stripe shape, and the wavelength converting layer 111 ′ is formed around each optoelectronic unit 3 and on part of a surface 100 s of the temporary carrier 100 .
  • the wavelength converting, layer can be formed around each optoelectronic unit 3 and on the whole surface 100 s of the temporary carrier 100 .
  • FIG. 11A illustrates a top view of several optoelectronic units 3 with a first electrode pad 304 and a second electrode pad 305 formed thereon further supported by a second supporting structure 71 in accordance with an embodiment of the present application.
  • FIG. 11B illustrates a cross-sectional view along line B-B′ shown in FIG. 11A .
  • the second supporting structure 71 can include one material different from that of the first supporting structure 73 , or have hardness greater than that of the first supporting structure 73 .
  • the second supporting structure 71 can be made of one or more transparent materials, such as sapphire, diamond, glass, epoxy, quartz, acryl, SiO x , Al 2 O 3 , ZnO silicone, or any combination thereof.
  • a thickness of the second supporting structure 71 can be between 100 ⁇ m and 700 ⁇ m.
  • the second supporting structure 71 can also be transparent to light, like the sunlight.
  • a wavelength converting layer 111 is formed around each optoelectronic unit 3 .
  • At least one surface of the second supporting structure 71 is a flat surface, such as the surface S 2 shown in FIG. 11B ; or a rough surface, such as the surface S 4 shown in FIG. 11C ; or the curved surface S 6 shown in FIG. 11D .
  • the surface S 4 of the first supporting structure 73 is a zigzag surface.
  • the curved surface S 6 of the first supporting structure 73 has several curved protrusions respectively corresponding to the optoelectronic units 3 .
  • FIG. 12A illustrates a top view of several optoelectronic units 3 supported by a second supporting structure 71 and a first supporting structure 73 in accordance with an embodiment of the present application. After the optoelectronic unit 3 is removed from temporary carrier 100 shown in FIG. 11B , the second supporting structure 71 and the first, supporting structure 73 are flipped.
  • FIG. 12B illustrates a cross-sectional view along the line C-C′ shown in FIG. 12A .
  • FIG. 13A and FIG. 14A illustrate top views of the optoelectronic units 3 electrically connected by a conductive element 75 in series.
  • the optoelectronic units 3 can be electrically connected by the conductive element 75 in parallel.
  • FIG. 13B and FIG. 14B illustrate cross-sectional views along the line D-D′ shown in FIG. 13A and the line E-E′ shown in FIG. 14A , respectively.
  • the conductive element 75 has a portion 751 arranged on the first supporting structure 73 between two of the optoelectronic units 3 .
  • a reflective layer 115 is formed, on the optoelectronic unit 3 by a lithography process and an etching process.
  • the reflective layer 115 can be made of one or more reflective materials, such as dielectrically material, for example, SiO 2 , Si 3 N 4 , or metal oxide, such as titanium dioxide or other white substance.
  • the reflective layer 115 can be a single layer or a stack.
  • FIGS. 13A-13B illustrate an embodiment that a part surface S 8 of the first supporting structure 73 is covered by the reflective layer 115 , a part of surface S 9 of the first supporting structure 73 not covered by the reflective layer 115 is overlaid, by a wavelength converting layer 111 ′′, and a part of surface S 10 of the first supporting structure 73 not covered by the reflective layer 115 and the wavelength converting layer 111 ′′ is overlaid by the conductive element 75 .
  • the reflective layer 115 is formed an the first supporting structure 73 between two of the optoelectronic units 3 .
  • the materials of the wavelength converting layer 111 ′′ and the wavelength converting layer ill can be the same or different.
  • the material of the conductive element 75 includes one or more metals.
  • the metal is such as Ag, Au, Ti, or Cu.
  • FIGS. 14A-14B illustrate another embodiment that a part of the surface S 8 of the first supporting structure 73 is covered by the reflective layer 115 , and a part of surface S 10 of the first supporting structure 73 not covered by the reflective layer 115 is overlaid by the conductive element 75 .
  • the optoelectronic units 3 are electrically connected with each other in series by the conductive element 75 , as shown in FIG. 15 .
  • the optoelectronic units 3 can be electrically connected with each other in parallel (not shown) by the conductive element 75 .
  • a first terminal 76 and a second terminal 78 are formed on the same end of a first supporting structure 73 as electrical contact points.
  • the first terminal 76 and the second terminal 78 can be formed on opposite ends of the first supporting structure 73 as electrical contact points.
  • the optoelectronic units 3 connected by the conductive element 75 are separated into several light-emitting devices 7 f , as shown in FIG. 16 .
  • the optoelectronic units 3 can be disposed in single line or multiple lines, for example, two lines as shown in FIG. 16 .
  • At least one of the light-emitting devices 71 has a width W and a length L.
  • the width W is approximately between 100 ⁇ m and 1000 ⁇ m.
  • the length L depends on the amount of the connected optoelectronic units 3 . The more the connected optoelectronics units are, the longer the length L is.
  • the first terminal 76 and the second terminal 78 are formed on opposite ends of the first supporting structure 73 as electrical contact points, as shown in FIG. 17 .
  • the optoelectronic units 3 are disposed in single line.
  • At least one of light-emitting devices 7 g has a width W and a length L.
  • the width W is approximately between 100 ⁇ m and 1000 ⁇ m.
  • the length L depends on the amount of the connected optoelectronic units 3 . The more the connected optoelectronics units 3 are, the longer the length L is.
  • the light-emitting device 7 f or 7 g of the present application can be constructed and arranged for different uses, for example, light bulb, emergency light, PAR light, automotive light, street lighting, subway lighting or indoor lighting.
  • the light-emitting device 7 f or 7 g can be applied to a bulb, such as the light bulb 6 shown in FIG. 7 .
  • the light-emitting device 7 f or 7 g can be plugged into the socket 65 of the light bulb 6 .
  • FIG. 18 illustrates that the light-emitting devices 7 g can be further mounted on a circuit board 72 , such as a FR4 PCB.
  • the assembly of the light-emitting devices 7 g and the circuit board 72 is designated as a light-emitting device 80 .
  • the circuit board 72 can include a plurality of electrical connecting points 79 for connecting with an AC power (not shown).
  • the first terminal 76 and the second terminal 78 are connected to the electrical connecting points 79 to form electrical connection.
  • the light-emitting device 80 can be applied to a light tube 8 , FIG. 19 illustrates a cross-sectional view of a light tube 8 .
  • the light tube 8 can have a size compatible with standard fluorescent tube, such as T5 and T8 fluorescent tube.
  • the light tube 8 can include at least one light-emitting device 80 , which is connected to a contact member (not shown) having a driver inside for electrical connection with an electrical power source (not shown).
  • the driver (not shown) inside the contact member includes circuits for electrical rectification and overload protection.
  • FIG. 20A illustrates an enlarged perspective view of an example of a light tube 90 in accordance with an embodiment of the present application.
  • the example of FIG. 20A illustrates the light tube 90 having a cylinder shape.
  • the light tube 90 comprises a hollow chamber 905 , a light-emitting device 90 R capable of emitting a red light and two light-emitting devices 90 W capable of emitting a white light.
  • the light-emitting device 90 R and the light-emitting device 90 W are disposed within the hollow chamber 905 .
  • the hollow chamber 905 comprises rectangular shape, cylinder shape, U-shape, or arc shape.
  • the hollow chamber 905 can be tilled with air or transparent medium such as silicone or epoxy.
  • numbers of the light-emitting device 90 W and the light-emitting device 90 R can be varied to obtain a desired color temperature.
  • the light-emitting device 90 R and the light-emitting device 90 W are arranged around a central axis (A) and parallel to each other.
  • the optoelectronic unit 3 is referred in the following description, but one or more kinds of the optoelectronic units 1 , 2 , or 3 , or the optoelectronic elements 4 a , 4 b , or 4 c described above can be applied to the light-emitting device 90 R and the light-emitting, device 90 W.
  • Each of the light-emitting device 90 R and the light-emitting device 90 W has a structure similar to that of the light-emitting device 7 g or 7 f shown in FIGS. 16-17 .
  • the light-emitting device 90 R or the light-emitting device 90 W comprises a plurality of optoelectronic units 3 connected in series to each other.
  • a manufacture method of the light-emitting device 90 R and the light-emitting device 90 W can be referred to the embodiments illustrates in FIGS. 8A-17 .
  • the light-emitting device 90 W comprises a plurality of optoelectronic units 3 capable of emitting a blue light, and a wavelength converting layer directly formed on the optoelectronic units 3 to convert the blue light to a yellow light.
  • the blue light is mixed with the yellow light to produce a white light.
  • the light tube 90 can be configured to mix light.
  • the white light emitted from the light-emitting device 90 W and having a CRI value less than 80 is mixed with the red light emitted from the light-emitting device 90 R for obtaining a white light having a CRI value greater than 80.
  • the heat conduction between the light-emitting device 90 W and the light-emitting device 90 R can be reduced.
  • the material of the light tube 90 comprises glass, silica gel, PMMA, PU, or epoxy.
  • the light-emitting, device 90 W and the light-emitting device 90 R can be separately controlled in two channels by an IC circuit. Two channels indicate the light-emitting device 90 W and the light-emitting device 90 R are configurable to be driven under the same or different current.
  • the light-emitting device 90 R can be optionally driven under 30 mA or 20 mA.
  • the light-emitting device 90 W and the light-emitting device 90 R can be connected in series and controlled in one channel through a circuit design on a circuit board. One channel indicates the light-emitting device 90 W and the light-emitting device 90 R are driven under the same current.
  • the light-emitting device 90 W is driven under 20 mA
  • the light-emitting device 90 R is also driven under 20 mA.
  • FIG. 20B illustrates an enlarged perspective view of another example of a light tube 90 .
  • the light tube 90 comprises one light-emitting device 90 R capable of emitting a red light and two light-emitting devices 90 B capable of emitting a blue light.
  • a film layer 907 comprising wavelength converting materials and diffusing particles is formed on an inner surface of the light tube 90 .
  • the film layer 907 can be formed on an outer surface of the light tube 90 .
  • the wavelength converting materials are adopted for converting the blue light emitting from the light-emitting device 90 B into a yellow light.
  • the blue light is mixed with the yellow light to produce a white light.
  • the diffusing particles are adopted for diffusing the blue light, the yellow light and/or the white light.
  • the white light mixed by the blue light and the yellow light usually has a CRI value less than 80, and then is further mixed with the red light emitted from the light-emitting device OUR for obtaining a white light having a CRI value greater than 80.
  • the film layer 907 comprises the wavelength converting materials for converting light and diffusing light.
  • FIG. 21A illustrates a cross-sectional view of a light-emitting device 90 R.
  • the light-emitting device 90 R has a structure different from the example of the light-emitting device 90 R shown in FIG. 20A .
  • the optoelectronic unit 3 is referred in the following description, but one or more kinds of the optoelectronic units 1 , 2 , or 3 , or the optoelectronic elements 4 a , 4 b , or 4 c described above can be applied to the light-emitting device 90 R.
  • FIG. 21A illustrates a cross-sectional view of a light-emitting device 90 R.
  • the light-emitting device 90 R comprises the optoelectronics units 3 disposed on a circuit board 91 and a cover 903 disposed over the optoelectronic units 3 for guiding or scattering light.
  • the light-emitting device 90 R in the example of FIG. 20A has an emanating side E 1 perpendicular to the central axis (A).
  • the light-emitting device 90 R in the example of FIG. 21A illustrates that the light-emitting device 90 R has an emanating side E 2 parallel to the central axis (A) shown in FIG. 20A .
  • FIG. 21B illustrates a cross-sectional view of another example of the light-emitting device 90 R.
  • the cover 903 can be roughed at the side surfaces 9031 for improving light extraction in another example of the embodiment.
  • FIG. 22A illustrates a perspective view of an example of a light tube 95 in accordance with an embodiment of the present application.
  • FIG. 22A illustrates an example that the light tube 95 have a U-shape.
  • the light tube 95 comprises a light-transmissive cover 951 , and the light-emitting device 90 B capable of emitting a blue light and disposed within the light-transmissive cover 951 .
  • the light-emitting device 90 B capable of emitting a blue light and disposed within the light-transmissive cover 951 .
  • the optoelectronic unit 3 is referred in the following description, but one or more kinds of the optoelectronic units 1 , 2 , or 3 , or the optoelectronic elements 4 a , 4 b , or 4 c described above can be applied to the light-emitting device 90 B.
  • the light-emitting device 90 B comprises a plurality of optoelectronic units 3 connected in series to each other and formed on a flexible transparent substrate 953 and are electrically connected in series with each other via a connecting structure 954 such as wire.
  • the bent light tube 95 can comprise the light-emitting device 908 capable of emitting, a blue light and the light-emitting device 90 R capable emitting, a red light.
  • a film layer 952 can be formed on an inner surface and/or an outer surface of the light-transmissive cover 951 .
  • the film layer 952 comprises wavelength converting materials and diffusing particles.
  • the wavelength converting materials are adopted for converting the blue light into a yellow light.
  • the blue light is mixed with the yellow light to produce a white light.
  • the diffusing particles are adopted for diffusing the blue light, the yellow light and/or the white light.
  • the white light mixed by the blue light and the yellow light usually has a CRI value less than 80, and then is further mixed with the red light emitted from the red optoelectronic units for obtaining a white light having a CRT value greater than 80.
  • the film layer 952 comprises the wavelength converting materials for converting light and diffusing light.
  • FIG. 22B illustrates a perspective view of another example of a light tube 95 .
  • a plurality of the light-emitting devices 90 B can be mounted on a U-shaped flexible substrate 956 .
  • the flexible substrate 956 has a circuit (not shown) thereon for electrically connecting the light-emitting devices 90 B.
  • the structure of light-emitting devices 90 B comprising as plurality of optoelectronic units, for example, the optoelectronic unit 3 described above electrically connected in series to each other is similar to the structure of the light-emitting device 7 g or 7 f shown in FIGS. 16-17 .
  • FIG. 23 illustrates a perspective view of a light bulb 20 in accordance with an embodiment of the present application.
  • the light bulb 20 comprises three bent light tubes 95 (U-shaped).
  • FIG. 24 illustrates a perspective view of a light bulb 10 in accordance with an embodiment of the present application.
  • the light bulb 10 comprises a bulb cover 10 S, a circuit board 91 such as PCB, a plurality of sockets 98 mounted on and electrically connected with the circuit board 91 , and a plurality of light tubes 90 detachably coupled to the corresponding socket 98 .
  • the light tubes 90 are arranged in a triangular pattern and tilted to each other. Specifically, the light tubes 90 are arranged in a cone shape viewed from perspective. Since the socket 98 has a tilted top surface, the light tube 90 connected into the tilted top surface has a tilted position.
  • top portions 901 of the light tubes 90 are close to each other and bottom portions 902 of the light tubes 90 are tar away from each other.
  • top portions 901 of the light tubes 90 can be far away from each other and bottom portions 902 of the light tubes 90 are close to each other.
  • the light tubes 90 can be arranged in a polygon pattern such as a square or a hexagon and emit light outwardly.
  • the light tubes 90 can also be arranged parallel to each other.
  • FIG. 25 illustrates a perspective view of a light bulb 30 in accordance with an embodiment of the present application.
  • the light bulb 30 comprises a candle light cover 301 , a circuit board 91 such as PCB, a plurality of sockets 98 mounted on and electrically connected with the circuit board 91 , and a plurality of light-emitting devices 90 W capable of emitting a white light detachably coupled to the corresponding socket 98 .
  • the light-emitting devices 90 W are arranged in a triangular pattern and tilted, to each other. In this embodiment, since the socket 98 has a tilted top surface, the light-emitting devices 90 W connected into the tilted top surface has a tilted position.
  • top portions of the light-emitting devices 90 W can be close to each other and bottom portions of the light-emitting devices 90 W are far away from each other.
  • top portions of the light-emitting devices 90 W can be far away from each other and bottom portions of the light-emitting devices 90 W are close to each other.
  • the light-emitting devices 90 W can be arranged parallel to each other.
  • the light-emitting devices 90 W can be arranged in a polygon pattern such as a square or a hexagon and emit light outwardly.
  • the light-emitting device 90 W can also be arranged parallel to each other.
  • the light-emitting device 90 W has a structure similar to that of the light-emitting device 7 g or 7 f shown in FIGS. 16-17 .

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
US13/743,030 2012-08-15 2013-01-16 Light-emitting device Abandoned US20140048824A1 (en)

Priority Applications (21)

Application Number Priority Date Filing Date Title
US13/743,030 US20140048824A1 (en) 2012-08-15 2013-01-16 Light-emitting device
TW102128791A TWI594458B (zh) 2012-08-15 2013-08-09 發光元件
TW106121320A TWI635625B (zh) 2012-08-15 2013-08-09 發光元件
TW107120445A TW201834267A (zh) 2012-08-15 2013-08-09 發光元件
KR1020147036324A KR20150022901A (ko) 2012-08-15 2013-08-14 발광 소자
KR1020197024452A KR102121160B1 (ko) 2012-08-15 2013-08-14 발광 소자
JP2015526857A JP2015525001A (ja) 2012-08-15 2013-08-14 発光部品
PCT/CN2013/000956 WO2014026468A1 (zh) 2012-08-15 2013-08-14 发光元件
EP20213871.5A EP3812648B1 (en) 2012-08-15 2013-08-14 Light bulb
CN201911323988.4A CN111102485B (zh) 2012-08-15 2013-08-14 发光元件
KR1020177007340A KR102015005B1 (ko) 2012-08-15 2013-08-14 발광 소자
EP13829787.4A EP2886932B1 (en) 2012-08-15 2013-08-14 Light emitting element
CN201380030510.7A CN104364577A (zh) 2012-08-15 2013-08-14 发光元件
CN201911323485.7A CN111102484B (zh) 2012-08-15 2013-08-14 发光元件
US14/933,816 US9825012B2 (en) 2012-08-15 2015-11-05 Light-emitting device
JP2016186929A JP2017017334A (ja) 2012-08-15 2016-09-26 発光部品
US15/730,323 US10083945B2 (en) 2012-08-15 2017-10-11 Light-emitting device
US16/110,293 US10319703B2 (en) 2012-08-15 2018-08-23 Light bulb
US16/436,445 US10593655B2 (en) 2012-08-15 2019-06-10 Light bulb
US16/794,861 US10720414B2 (en) 2012-08-15 2020-02-19 Light bulb
US16/930,860 US10886262B2 (en) 2012-08-15 2020-07-16 Light bulb

Applications Claiming Priority (3)

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US201261683295P 2012-08-15 2012-08-15
US201261694410P 2012-08-29 2012-08-29
US13/743,030 US20140048824A1 (en) 2012-08-15 2013-01-16 Light-emitting device

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US14/933,816 Continuation US9825012B2 (en) 2012-08-15 2015-11-05 Light-emitting device

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US20140048824A1 true US20140048824A1 (en) 2014-02-20

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US13/743,030 Abandoned US20140048824A1 (en) 2012-08-15 2013-01-16 Light-emitting device
US14/933,816 Active US9825012B2 (en) 2012-08-15 2015-11-05 Light-emitting device
US15/730,323 Active US10083945B2 (en) 2012-08-15 2017-10-11 Light-emitting device
US16/110,293 Active US10319703B2 (en) 2012-08-15 2018-08-23 Light bulb
US16/436,445 Active US10593655B2 (en) 2012-08-15 2019-06-10 Light bulb
US16/794,861 Active US10720414B2 (en) 2012-08-15 2020-02-19 Light bulb
US16/930,860 Active US10886262B2 (en) 2012-08-15 2020-07-16 Light bulb

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US14/933,816 Active US9825012B2 (en) 2012-08-15 2015-11-05 Light-emitting device
US15/730,323 Active US10083945B2 (en) 2012-08-15 2017-10-11 Light-emitting device
US16/110,293 Active US10319703B2 (en) 2012-08-15 2018-08-23 Light bulb
US16/436,445 Active US10593655B2 (en) 2012-08-15 2019-06-10 Light bulb
US16/794,861 Active US10720414B2 (en) 2012-08-15 2020-02-19 Light bulb
US16/930,860 Active US10886262B2 (en) 2012-08-15 2020-07-16 Light bulb

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US (7) US20140048824A1 (ja)
EP (2) EP3812648B1 (ja)
JP (2) JP2015525001A (ja)
KR (3) KR102121160B1 (ja)
CN (3) CN104364577A (ja)
TW (3) TW201834267A (ja)
WO (1) WO2014026468A1 (ja)

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