US20120229936A1 - Magneto-resistance effect device, and magnetic recorder - Google Patents

Magneto-resistance effect device, and magnetic recorder Download PDF

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Publication number
US20120229936A1
US20120229936A1 US13/481,317 US201213481317A US2012229936A1 US 20120229936 A1 US20120229936 A1 US 20120229936A1 US 201213481317 A US201213481317 A US 201213481317A US 2012229936 A1 US2012229936 A1 US 2012229936A1
Authority
US
United States
Prior art keywords
layer
magneto
function
resistance effect
effect device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/481,317
Other languages
English (en)
Inventor
Yoshihiko Fuji
Hideaki Fukuzawa
Hiromi Yuasa
Michiko Hara
Shuichi Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Assigned to KABUSHIKI KAISHA TOSHIBA reassignment KABUSHIKI KAISHA TOSHIBA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HARA, MICHIKO, FUJI, YOSHIHIKO, FUKUZAWA, HIDEAKI, MURAKAMI, SHUICHI, YUASA, HIROMI
Publication of US20120229936A1 publication Critical patent/US20120229936A1/en
Priority to US14/025,194 priority Critical patent/US20140009854A1/en
Priority to US14/469,484 priority patent/US9177574B2/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/398—Specially shaped layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/398—Specially shaped layers
    • G11B5/3983—Specially shaped layers with current confined paths in the spacer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H01F10/3259—Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H01F41/325—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film applying a noble metal capping on a spin-exchange-coupled multilayer, e.g. spin filter deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Magnetic Heads (AREA)
US13/481,317 2009-11-27 2012-05-25 Magneto-resistance effect device, and magnetic recorder Abandoned US20120229936A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US14/025,194 US20140009854A1 (en) 2009-11-27 2013-09-12 Magneto-resistance effect device, and magnetic recorder
US14/469,484 US9177574B2 (en) 2009-11-27 2014-08-26 Magneto-resistance effect device with mixed oxide function layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2009/006442 WO2011064822A1 (ja) 2009-11-27 2009-11-27 磁気抵抗効果素子、及び磁気記録再生装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2009/006442 Continuation WO2011064822A1 (ja) 2009-11-27 2009-11-27 磁気抵抗効果素子、及び磁気記録再生装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US14/025,194 Division US20140009854A1 (en) 2009-11-27 2013-09-12 Magneto-resistance effect device, and magnetic recorder

Publications (1)

Publication Number Publication Date
US20120229936A1 true US20120229936A1 (en) 2012-09-13

Family

ID=44065947

Family Applications (3)

Application Number Title Priority Date Filing Date
US13/481,317 Abandoned US20120229936A1 (en) 2009-11-27 2012-05-25 Magneto-resistance effect device, and magnetic recorder
US14/025,194 Abandoned US20140009854A1 (en) 2009-11-27 2013-09-12 Magneto-resistance effect device, and magnetic recorder
US14/469,484 Active US9177574B2 (en) 2009-11-27 2014-08-26 Magneto-resistance effect device with mixed oxide function layer

Family Applications After (2)

Application Number Title Priority Date Filing Date
US14/025,194 Abandoned US20140009854A1 (en) 2009-11-27 2013-09-12 Magneto-resistance effect device, and magnetic recorder
US14/469,484 Active US9177574B2 (en) 2009-11-27 2014-08-26 Magneto-resistance effect device with mixed oxide function layer

Country Status (3)

Country Link
US (3) US20120229936A1 (ja)
JP (1) JP5518896B2 (ja)
WO (1) WO2011064822A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110261478A1 (en) * 2010-04-21 2011-10-27 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetic recording apparatus
US10008221B2 (en) * 2014-10-29 2018-06-26 International Business Machines Corporation Multichannel data storage apparatus having abrasion resistant barrier
US20180299338A1 (en) * 2014-03-19 2018-10-18 Kabushiki Kaisha Toshiba Strain detecting element, pressure sensor and microphone
US20220291305A1 (en) * 2019-08-06 2022-09-15 Hitachi High-Tech Corporation Magneto-resistance effect element and magneto-resistance effect device

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JP5739685B2 (ja) 2011-02-14 2015-06-24 株式会社東芝 磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5356431B2 (ja) 2011-02-17 2013-12-04 株式会社東芝 磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録装置
JP5629608B2 (ja) 2011-02-25 2014-11-26 株式会社東芝 磁気抵抗効果素子、磁気ヘッドアセンブリ、磁気記録再生装置、メモリセルアレイ、及び磁気抵抗効果素子の製造方法
JP5956793B2 (ja) * 2012-03-16 2016-07-27 株式会社東芝 磁気抵抗効果素子、磁気ヘッドアセンブリ、磁気記録再生装置及び磁気メモリ
US9368176B2 (en) * 2012-04-20 2016-06-14 Alexander Mikhailovich Shukh Scalable magnetoresistive element
US9520148B1 (en) * 2015-12-21 2016-12-13 Seagate Technology Llc Reset of magnetic domains in write head via external field
KR102574163B1 (ko) 2016-08-31 2023-09-06 삼성전자주식회사 자기 메모리 장치
US10622047B2 (en) 2018-03-23 2020-04-14 Taiwan Semiconductor Manufacturing Company, Ltd. Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer
US10522752B1 (en) 2018-08-22 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic layer for magnetic random access memory (MRAM) by moment enhancement
JP2020043133A (ja) 2018-09-06 2020-03-19 キオクシア株式会社 磁気記憶装置
JP7136492B2 (ja) * 2018-11-29 2022-09-13 国立研究開発法人物質・材料研究機構 磁気抵抗効果素子、磁気センサ、再生ヘッドおよび磁気記録再生装置

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US6937446B2 (en) * 2000-10-20 2005-08-30 Kabushiki Kaisha Toshiba Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
JP4167428B2 (ja) * 2001-02-01 2008-10-15 株式会社東芝 磁気抵抗効果素子、磁気抵抗効果ヘッド、および磁気記録再生装置
US6905780B2 (en) 2001-02-01 2005-06-14 Kabushiki Kaisha Toshiba Current-perpendicular-to-plane-type magnetoresistive device, and magnetic head and magnetic recording-reproducing apparatus using the same
JP2003031867A (ja) 2001-07-17 2003-01-31 Hitachi Ltd 酸化物磁性層と金属磁性膜を積層した磁気抵抗効果素子
JP4024499B2 (ja) 2001-08-15 2007-12-19 株式会社東芝 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置
JP4382333B2 (ja) * 2002-03-28 2009-12-09 株式会社東芝 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置
JP4304688B2 (ja) * 2002-06-28 2009-07-29 独立行政法人科学技術振興機構 スピンフィルタ効果素子及びそれを用いた磁気デバイス
SE528901C2 (sv) 2004-05-25 2007-03-13 Nm Spintronics Ab Magnetisk filterbarriär
JP4309363B2 (ja) 2005-03-16 2009-08-05 株式会社東芝 磁気抵抗効果素子、磁気再生ヘッド及び磁気情報再生装置
JP2007281087A (ja) 2006-04-04 2007-10-25 Hitachi Global Storage Technologies Netherlands Bv 積層体、その製造方法及び磁気抵抗効果ヘッド
JP4942445B2 (ja) 2006-09-08 2012-05-30 Ｔｄｋ株式会社 磁気抵抗効果素子、薄膜磁気ヘッド、ヘッドジンバルアセンブリ、ヘッドアームアセンブリおよび磁気ディスク装置
US20080218912A1 (en) 2007-03-09 2008-09-11 Tdk Corporation CPP-type magnetoresistive element having spacer layer that includes semiconductor layer
JP5150284B2 (ja) * 2008-01-30 2013-02-20 株式会社東芝 磁気抵抗効果素子およびその製造方法
JP2009238918A (ja) * 2008-03-26 2009-10-15 Tdk Corp スピンフィルタ効果素子及びスピントランジスタ
JP4991901B2 (ja) 2010-04-21 2012-08-08 株式会社東芝 磁気抵抗効果素子及び磁気記録再生装置
JP4991920B2 (ja) 2010-09-01 2012-08-08 株式会社東芝 磁気抵抗効果素子の製造方法
JP5739685B2 (ja) 2011-02-14 2015-06-24 株式会社東芝 磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5629608B2 (ja) 2011-02-25 2014-11-26 株式会社東芝 磁気抵抗効果素子、磁気ヘッドアセンブリ、磁気記録再生装置、メモリセルアレイ、及び磁気抵抗効果素子の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110261478A1 (en) * 2010-04-21 2011-10-27 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetic recording apparatus
US20180299338A1 (en) * 2014-03-19 2018-10-18 Kabushiki Kaisha Toshiba Strain detecting element, pressure sensor and microphone
US10008221B2 (en) * 2014-10-29 2018-06-26 International Business Machines Corporation Multichannel data storage apparatus having abrasion resistant barrier
US20220291305A1 (en) * 2019-08-06 2022-09-15 Hitachi High-Tech Corporation Magneto-resistance effect element and magneto-resistance effect device

Also Published As

Publication number Publication date
JPWO2011064822A1 (ja) 2013-04-11
US9177574B2 (en) 2015-11-03
US20140362477A1 (en) 2014-12-11
WO2011064822A1 (ja) 2011-06-03
US20140009854A1 (en) 2014-01-09
JP5518896B2 (ja) 2014-06-11

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Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:FUJI, YOSHIHIKO;FUKUZAWA, HIDEAKI;YUASA, HIROMI;AND OTHERS;SIGNING DATES FROM 20120517 TO 20120518;REEL/FRAME:028272/0914

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