US20120052771A1 - Method For the Material-Removing Machining of Very Thin Work Pieces in a Double Sided Grinding Machine - Google Patents
Method For the Material-Removing Machining of Very Thin Work Pieces in a Double Sided Grinding Machine Download PDFInfo
- Publication number
- US20120052771A1 US20120052771A1 US13/262,596 US201013262596A US2012052771A1 US 20120052771 A1 US20120052771 A1 US 20120052771A1 US 201013262596 A US201013262596 A US 201013262596A US 2012052771 A1 US2012052771 A1 US 2012052771A1
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- Prior art keywords
- work pieces
- carriers
- working
- machining
- working surface
- Prior art date
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- 238000003754 machining Methods 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 42
- 239000000969 carrier Substances 0.000 claims abstract description 86
- 238000012545 processing Methods 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 21
- 238000005498 polishing Methods 0.000 claims abstract description 16
- 239000000853 adhesive Substances 0.000 claims description 15
- 230000001070 adhesive effect Effects 0.000 claims description 15
- 230000005855 radiation Effects 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000002313 adhesive film Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 238000007786 electrostatic charging Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 229920003023 plastic Polymers 0.000 claims description 2
- 238000002604 ultrasonography Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 14
- 238000005259 measurement Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/10—Single-purpose machines or devices
- B24B7/16—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
- B24B7/17—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/28—Work carriers for double side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Definitions
- the invention relates to a method for the material-removing machining of very thin work pieces.
- work pieces have to be machined by removing material, in particular by grinding.
- work pieces may, for example, be semiconductor wafers which may have a thickness of less than 100 ⁇ m after, and optionally already before, the machining process.
- Such work pieces are so flexible that machining in standard grinding machines is not possible.
- Various possibilities for fastening very thin wafers to a carrier are disclosed in C. Austinberger et al.: Carrier Techniques for Thin Wafer Processing, CS Mantech Conference, May 14-17, 2007, Austin, Tex., USA.
- the wafers may be bonded, for example, to a carrier or held thereon by means of electrostatic forces.
- a carrier By the connection of the wafers to a carrier, it is intended to be able to machine the wafers without having to change between different carriers for the different machining processes.
- the machining of the work pieces fastened to the carriers takes place by the carriers being held by a vacuum retaining device and a grinding disc being guided along a circular path over the surface of the work pieces and being pressed onto the work pieces.
- a drawback here is that a point of discontinuity is formed in the middle of the machined workpiece surface.
- the object of the invention is to provide a method of the aforementioned type by which accurate material-removing machining of very thin work pieces is possible in a simple manner.
- the object is achieved by the invention firstly by a method for the material-removing machining, in particular for machining by grinding or polishing, of very thin work pieces which are releasably fastened with one of their surfaces in each case to a corresponding surface of similarly very thin carriers, comprising the steps:
- a double sided processing machine which has an upper working disc with an upper working surface and a lower working disc with a lower working surface, the working surfaces forming a working gap therebetween, in which at least one rotor disc comprising recesses is arranged,
- the work pieces are arranged together with the carriers in the recesses of the at least one rotor disc,
- At least one of the working discs is driven rotatably, the at least one rotor disc also being set in rotation by means of a roller device, whereby the carriers received in the rotor disc move with the work pieces along cycloid paths between the working surfaces, and one of the working surfaces coming into contact with the respective free surfaces of the carriers and one of the working surfaces coming into contact with the respective free surfaces of the work pieces,
- the free surfaces of the work pieces are machined in a material-removing manner by the working surface associated therewith, whilst by the working surface associated with the free surfaces of the carriers, either no material is removed or a removal rate of the free surfaces of the carriers is substantially less than a removal rate of the free surfaces of the work pieces or the removal rate of the free surfaces of the carriers is the same as the removal rate of the free surfaces of the work pieces.
- a machining of the thin work pieces takes place in a double sided processing machine with planetary kinematics.
- a plurality of rotor discs may be provided which in each case have through-recesses.
- the carriers with the work pieces fastened thereto are held in the rotor discs and floatingly guided in the working gap between the working surfaces.
- At least the working surface of the machine associated with the work pieces has a working coating, in particular an abrasive or polishing coating, and this results in the removal of material.
- the work pieces may be so thin that they are too flexible after, and optionally even already before, the machining to be machined in the machine without the carriers.
- the work pieces may have a smaller thickness than the carriers.
- the carriers provide the required stability for machining in the double sided machine.
- an abrasive machining of very thin work pieces may also be carried out in a double sided processing machine with planetary kinematics, when the removal rate of the carriers is at least substantially less than that of the work pieces.
- the planetary kinematics of the machine i.e. the configuration of the rotor discs and the movement thereof in the working gap, a particularly accurate and uniform removal of material is ensured. Points of discontinuity in the middle of the work pieces are reliably avoided.
- the material-removing machining is abrasive machining it is advantageous, in particular, if the working surface associated with the surfaces of the work pieces is provided with an abrasive coating and the working surface associated with the surfaces of the carriers is provided with a polishing coating, and the machining takes place without an abrasive polishing means. A material removal of the carriers may be almost completely avoided in this manner. Provided, however, machining takes place by polishing it is also possible to select the removal rates for the work pieces and carriers to be the same. So little material is removed during polishing that, even with this process, the carriers may be used repeatedly.
- the object is also achieved by the invention by a method for the material-removing machining, in particular for machining by grinding or polishing, of very thin work pieces which are releasably fastened in pairs with one of their surfaces to corresponding opposing surfaces of similarly very thin carriers, comprising the steps:
- a double sided processing machine which has an upper working disc with an upper working surface and a lower working disc with a lower working surface, the working surfaces forming a working gap therebetween, in which at least one rotor disc comprising recesses is arranged,
- the work pieces are arranged together with the carriers in the recesses of the at least one rotor disc,
- At least one of the working discs is driven rotatably, the at least one rotor disc being also set in rotation by means of a roller device, whereby the carriers received in the rotor disc move with the work pieces along cycloid paths between the working surfaces, and one of the working surfaces coming into contact with the respective free surfaces of the work pieces fastened to one side of the carriers and one of the working surfaces coming into contact with the respective free surfaces of the work pieces fastened to the opposing side of the carriers,
- the free surfaces of the work pieces releasably fastened to the opposing sides of the carriers are respectively machined in a material-removing manner by the working surface associated therewith.
- the work pieces and the carriers may in each case be of cylindrical configuration.
- the surfaces are in this case the upper and lower faces of the work pieces and/or carriers. They may have substantially parallel surfaces, in particular plane-parallel surfaces.
- the work pieces Before the machining process, the work pieces may already have integrated circuits on the upper face thereof They are then machined from the lower face thereof
- the work pieces after the machining process, may have a thickness of less than 100 ⁇ m, preferably less than 50 ⁇ m, further preferably less than 20 ⁇ m.
- Such work pieces are not able to be machined without the carriers in a double sided processing machine of the type according to the invention.
- the carriers may be many times thicker than the work pieces before and/or after machining.
- the thickness of the carriers may, for example, range between 0.5 mm to 2 mm, preferably 0.7 mm to 1.0 mm before and/or after machining.
- the cylindrical carriers and work pieces terminating flush with one another at their edges results in repeated contact between the rotor discs and the edges of the carriers and work pieces and thus an introduction of force onto the carriers and work pieces.
- This may, in particular, lead to damage in the thin work pieces according to the invention.
- a further embodiment therefore, provides that the carriers and the work pieces have a substantially cylindrical shape and the carriers have a larger diameter than the work pieces.
- the work pieces may be fastened, for example, coaxially to the carriers.
- the edges of the thicker carriers in particular, come into contact with the rotor discs which may absorb the corresponding forces without the risk of damage. An undesirable action of force on the thin work pieces is thus reliably avoided.
- the work pieces may be fastened to the carriers by a adhesive connection, for example by wax, an adhesive or an adhesive film.
- the adhesive connection may be releasable thermally, chemically (for example by a solvent) by etching (for example by an etching agent) or by UV radiation.
- thermal releasability it has to be ensured that the temperatures present during the material-removing machining are lower than the temperature at which the adhesive connection is released. After the machining, the adhesive connection may thus be released by suitable thermal action and the workpiece removed from the carrier.
- the work pieces are fastened to the carrier by electrostatic charging.
- the work pieces may be semiconductor wafers, in particular silicon wafers.
- the carriers may also be such semiconductor wafers, in particular silicon wafers. Said silicon wafers are available inexpensively and are very suitable as carriers.
- the carriers and the work pieces may thus consist of the same material. However, it is also possible that the carriers consist of a glass material, a ceramic material or a plastics material. By selecting a different material for the carriers than for the work pieces, in the first method according to the invention a different removal rate on the carriers may be achieved in a particularly simple manner.
- a further embodiment provides, therefore, that the thickness of the work pieces is measured during the machining thereof in the processing machine by means of an optical measuring method, in particular an interferometric measuring method.
- an optical measuring method in particular an interferometric measuring method.
- infrared interferometry may be used, which is preferred, in particular, in work pieces consisting of silicon which are transparent to infrared radiation.
- Such measuring methods provide a particularly high degree of measuring accuracy, as is required when machining very thin work pieces according to the invention. According to the invention, it has been recognised that such measuring methods may be used in a double sided processing machine comprising planetary kinematics.
- the thickness of the work pieces is still measured in the processing machine, therefore, in particular an optical measuring device is arranged in or on the processing machine.
- an optical measuring device is arranged in or on the processing machine.
- the work pieces are not in any way affected by the measurement.
- a thickness profile may be created and thus the uniformity of the machining monitored.
- infrared radiation is oriented towards the free surface of the work pieces, a first radiation component being reflected on the free surface and a second radiation component penetrating the workpiece thickness, being reflected on the workpiece surface fastened to the carrier and emerging again on the free workpiece surface,
- the first and the second radiation component interfere, forming an interference pattern
- the optical workpiece thickness between the free workpiece surface and the workpiece surface fastened to the carrier is determined using the interference pattern
- the mechanical workpiece thickness is determined from the optical workpiece thickness.
- the thickness of the work pieces may be measured during the machining thereof in the processing machine, for example, by means of at least one eddy-current sensor or by means of at least one ultrasound sensor or by means of other measuring methods which have sufficient measuring accuracy in order to measure thicknesses in the range of less than 1 mm.
- the work pieces may pass through a region outside the working gap.
- This is denoted in technical terms as overrun.
- it is located on the outer face of the working gap.
- such overrun may also be located on the inside of the working gap. According to one embodiment, therefore, it may be provided that the thickness is measured (for example optically) in the region outside the working gap.
- the overrun is easily accessible and, therefore, particularly suitable for thickness measurement in this region.
- the processing machine has at least one optical or other suitable measuring device arranged in a working disc of the processing machine, by which the thickness is measured.
- This embodiment is based on the idea of arranging a measuring device in one of the working discs, preferably in the upper working disc due to the possible occurrence of contaminants, and in this manner to permit a thickness measurement during the machining process.
- FIG. 1 shows a double sided grinding machine used in the method according to the invention in a perspective view
- FIG. 2 shows a workpiece connected to a carrier for the machining according to the invention in a sectional view
- FIG. 3 shows an enlarged plan view of the lower working disc of the device of FIG. 1 ,
- FIG. 4 shows an enlarged detail of the double sided grinding machine used in the method according to the invention in a sectional view
- FIG. 5 shows two work pieces connected to a carrier for the machining according to the invention in a sectional view.
- FIG. 1 shows schematically the construction of a double sided processing machine 10 used according to the invention, in the example shown a double sided grinding machine 10 comprising planetary kinematics.
- the double sided grinding machine 10 has an upper pivoting arm 12 which may be pivoted about a vertical axis via a pivoting device 14 mounted on the lower base 18 .
- An upper working disc 16 is carried on the pivoting arm 12 .
- the upper working disc 16 is able to be driven rotatably via a drive motor, not shown in more detail.
- the upper working disc 16 On its lower face, not shown in FIG. 1 , the upper working disc 16 has a working surface.
- a polishing coating is arranged on this surface.
- the lower base 18 has a carrier portion 19 which carries a lower working disc 20 which has on its upper face a working surface corresponding to the working surface of the upper working disc 16 .
- the upper working disc 16 may be oriented coaxially to the lower working disc 20 .
- the lower working disc 20 is, in the example shown, also able to be driven rotatably by a drive motor, not shown, in particular counter to the upper disc 16 .
- a drive motor not shown, in particular counter to the upper disc 16 .
- an abrasive coating is arranged on the working surface of the lower working disc 20 .
- a plurality of rotor discs 22 are shown which in each case comprise recesses for work pieces to be machined together with the carriers fastened thereto.
- the rotor discs 22 in each case engage with outer teeth in an inner pin ring 24 and an outer pin ring 26 .
- a roller device is formed, the rotor discs 22 , for example, also being set in rotation via the inner pin ring 24 with a rotation of the lower working disc 20 .
- the work pieces and the carriers arranged in the recesses of the rotor discs 22 then move on the lower working disc 20 along cycloid paths.
- FIG. 2 The work pieces to be machined by the double sided grinding machine shown in FIG. 1 according to the invention and the carriers are shown in FIG. 2 .
- the work pieces and carriers are in this case of cylindrical configuration. It is understood that the thickness of the work pieces and carriers is shown substantially exaggerated relative to their diameter.
- a cylindrical carrier 28 is shown, in the present case a silicon wafer.
- the carrier 28 has, in the example shown, a thickness of approximately 1 mm. Whilst the upper face 30 of the carrier 28 is free, the lower face 32 is connected via an adhesive connection 34 to the upper face 36 of a workpiece 38 to be machined, in the present case also a silicon wafer.
- the adhesive connection 34 may, for example, be formed by a wax, an adhesive or an adhesive film.
- the wax, the adhesive and/or the adhesive film may be releasable, for example, thermally, chemically, by etching or by UV radiation.
- the lower face 40 of the workpiece 38 is, in turn, free.
- the carrier 28 and the workpiece 38 on their outer faces terminate flush with one another in the state of the workpiece 38 fastened to the carrier 28 . It is, however, also possible for the carrier 28 and workpiece 38 to have different diameters and not terminate flush with one another.
- the workpiece 38 shown in FIG. 2 has in the example a thickness of less than 100 ⁇ m after the machining process. As a result, without the carrier 28 it is so flexible that it could not be machined in the double sided grinding machine 10 shown in FIG. 1 . By fastening to the considerably thicker carrier 28 , however, a stability is achieved which is sufficient for machining in the machine 10 .
- the work pieces 38 together with the carriers 28 are inserted into the recesses of the rotor discs 22 and floatingly mounted in the working gap formed between the working discs 16 , 20 which are oriented coaxially to one another by pivoting the pivoting arm 12 .
- the upper working disc 16 is subsequently pressed downward by a pressing force. This results in an abrasive contact between the abrasive coating of the lower working disc 20 and the free lower face 40 of the work pieces 38 .
- the polishing coating of the upper working disc 16 comes into contact with the upper free face 30 of the carriers 28 . In this case, the machining by grinding only takes place with water as a cooling medium.
- a polishing means using an abrasive material is not used.
- the work pieces 38 may be thinly ground from their lower face 40 , without any removal of material on the upper face 30 of the carriers 28 .
- the upper working disc 16 is again pivoted away and the machined work pieces 38 may be removed together with the carriers 28 from the rotor discs.
- the adhesive connection 34 may be released and the work pieces 38 are thus separated from the carriers 28 .
- the carriers 28 may be subsequently reused.
- FIG. 3 an enlarged plan view of the lower working disc 20 with its working surface 21 is shown with the abrasive coating.
- the rotor discs 22 may also be seen with a plurality of recesses 23 for the carriers and work pieces. Also visible is the inner pin ring 24 and the outer pin ring 26 on which the rotor discs 22 roll with their outer teeth 25 .
- the recesses 23 and therewith the carriers 28 and work pieces 38 received therein partially pass through a region 42 outside the working gap defined by the lower working surface 21 and the upper working surface of the upper working disc 16 during operation. This region 42 is technically denoted as overrun 42 .
- a second region 44 outside the annular working gap defined by the working discs 16 , 20 is located in FIG. 3 on the inside of the working gap.
- an interferometric thickness measurement of the work pieces 38 arranged in the recesses 23 , in the region of the external overrun 42 is disclosed.
- a thickness measurement is also possible in a similar manner in the region of the internal overrun 44 .
- a suitable measurement device in one of the working surfaces of the upper or lower working disc 16 , 20 a measurement could also take place within the working gap.
- an optical measuring device 46 is arranged in the region of the external overrun 42 .
- the measuring device 46 is an infrared interferometer.
- a workpiece 38 is shown together with a carrier 28 in a partially visible rotor disc 22 .
- said workpiece 38 passes from time to time with its carrier 28 through the overrun 42 .
- infrared radiation 48 in the present case an infrared radiation spectrum 48 , is oriented from below towards the free lower face 40 of the workpiece 38 .
- the infrared radiation 48 is reflected by a first radiation component on the free workpiece lower face 40 , whilst a second radiation component penetrates the workpiece 38 which is highly transparent to infrared radiation, is reflected inwards on the upper face 36 of the workpiece 38 connected to the carrier 28 and immediately or after repeated reflections on the inner surfaces of the workpiece 38 emerges again on the free lower face 40 of the workpiece 38 .
- the first and second radiation components returning from the workpiece 38 into the measuring device 46 subsequently interfere with one another which is recorded by a suitable sensor device (not shown).
- the mechanical workpiece thickness may be determined from the detected optical workpiece thickness and the known refraction index.
- the machining method according to the invention may be carried out even more accurately. It is also possible, for example, to measure radially the part of the workpiece 38 located in the overrun 42 and to create a corresponding thickness profile in order to increase the machining accuracy further.
- FIG. 5 an arrangement is shown which corresponds substantially to the arrangement of FIG. 2 .
- one respective workpiece 38 is releasably fastened to a carrier 28 via the adhesive connection 34 on its opposing upper and lower surfaces.
- This is a so-called triple stack.
- This arrangement may also be machined in the device shown, for example, in FIG. 1 .
- the same removal rate may be provided for the upper and the lower workpiece, as in this case the carrier does not come into contact with the working surfaces.
- the method according to the invention permits highly accurate machining of very thin work pieces which, after the machining process, have a thickness in the region of less than 100 ⁇ m, preferably less than 50 ⁇ m, further preferably less than 20 ⁇ m, for example in the region of 10 ⁇ m.
- the work pieces 38 may easily be transported with the same tools due to their connection to the carrier 28 during their entire machining process, for example even a subsequent polishing process.
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE102009015878.2 | 2009-04-01 | ||
DE102009015878A DE102009015878A1 (de) | 2009-04-01 | 2009-04-01 | Verfahren zum materialabtragenden Bearbeiten von flachen Werkstücken |
PCT/EP2010/002090 WO2010112225A1 (de) | 2009-04-01 | 2010-04-01 | Verfahren zum materialabtragenden bearbeiten von sehr dünnen werkstücken in einer doppelseitenschleifmaschine |
Publications (1)
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US20120052771A1 true US20120052771A1 (en) | 2012-03-01 |
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ID=42269533
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US13/262,596 Abandoned US20120052771A1 (en) | 2009-04-01 | 2010-04-01 | Method For the Material-Removing Machining of Very Thin Work Pieces in a Double Sided Grinding Machine |
Country Status (8)
Country | Link |
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US (1) | US20120052771A1 (ko) |
EP (1) | EP2414133B1 (ko) |
JP (1) | JP5639147B2 (ko) |
KR (1) | KR101760355B1 (ko) |
CN (1) | CN102378668A (ko) |
DE (1) | DE102009015878A1 (ko) |
SG (1) | SG174365A1 (ko) |
WO (1) | WO2010112225A1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140273760A1 (en) * | 2013-03-15 | 2014-09-18 | Ii-Vi Incorporated | Double-Sided Polishing of Hard Substrate Materials |
US9984942B2 (en) | 2014-04-30 | 2018-05-29 | Ev Group E. Thallner Gmbh | Method and device for leveling a substrate stack |
Families Citing this family (4)
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CN103158054B (zh) * | 2011-12-19 | 2016-02-03 | 张卫兴 | 两种在双面研抛机上实现的单面抛光方法 |
WO2015080295A1 (ja) * | 2013-11-29 | 2015-06-04 | Hoya株式会社 | 研磨処理用キャリア、研磨処理用キャリアの製造方法、及び磁気ディスク用基板の製造方法 |
CN106625065A (zh) * | 2017-01-17 | 2017-05-10 | 宜兴市科兴合金材料有限公司 | 一种能够回收碎屑的钼圆片打磨装置 |
CN108188931A (zh) * | 2017-12-22 | 2018-06-22 | 华侨大学 | 双面行星磨削/研磨加工中工件破碎的在线控制系统 |
Citations (3)
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US5110428A (en) * | 1989-09-05 | 1992-05-05 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process and apparatus for double-sided chemomechanical polishing of semiconductor wafers and semiconductor wafers obtainable thereby |
US6080042A (en) * | 1997-10-31 | 2000-06-27 | Virginia Semiconductor, Inc. | Flatness and throughput of single side polishing of wafers |
US20030104698A1 (en) * | 2000-04-24 | 2003-06-05 | Toru Taniguchi | Method of manufacturing semiconductor wafer |
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- 2010-04-01 KR KR1020117023576A patent/KR101760355B1/ko active IP Right Grant
- 2010-04-01 EP EP10712902.5A patent/EP2414133B1/de active Active
- 2010-04-01 WO PCT/EP2010/002090 patent/WO2010112225A1/de active Application Filing
- 2010-04-01 US US13/262,596 patent/US20120052771A1/en not_active Abandoned
- 2010-04-01 SG SG2011065844A patent/SG174365A1/en unknown
- 2010-04-01 JP JP2012502511A patent/JP5639147B2/ja active Active
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US20140273760A1 (en) * | 2013-03-15 | 2014-09-18 | Ii-Vi Incorporated | Double-Sided Polishing of Hard Substrate Materials |
US9427841B2 (en) * | 2013-03-15 | 2016-08-30 | Ii-Vi Incorporated | Double-sided polishing of hard substrate materials |
US9984942B2 (en) | 2014-04-30 | 2018-05-29 | Ev Group E. Thallner Gmbh | Method and device for leveling a substrate stack |
Also Published As
Publication number | Publication date |
---|---|
EP2414133A1 (de) | 2012-02-08 |
EP2414133B1 (de) | 2016-11-23 |
JP5639147B2 (ja) | 2014-12-10 |
JP2012522649A (ja) | 2012-09-27 |
KR20110135401A (ko) | 2011-12-16 |
KR101760355B1 (ko) | 2017-07-21 |
DE102009015878A1 (de) | 2010-10-07 |
CN102378668A (zh) | 2012-03-14 |
WO2010112225A1 (de) | 2010-10-07 |
SG174365A1 (en) | 2011-10-28 |
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