US20110291544A1 - Gas barrier substrate, package of organic electro-luminenscent device and packaging method thereof - Google Patents

Gas barrier substrate, package of organic electro-luminenscent device and packaging method thereof Download PDF

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Publication number
US20110291544A1
US20110291544A1 US12/884,212 US88421210A US2011291544A1 US 20110291544 A1 US20110291544 A1 US 20110291544A1 US 88421210 A US88421210 A US 88421210A US 2011291544 A1 US2011291544 A1 US 2011291544A1
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Prior art keywords
gas barrier
substrate
layer
barrier layer
bonding surface
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English (en)
Inventor
Hsiao-Fen Wei
Liang-You Jiang
Pao-Ming Tsai
Yu-Yang Chang
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Industrial Technology Research Institute ITRI
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Industrial Technology Research Institute ITRI
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Assigned to INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE reassignment INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHANG, YU-YANG, JIANG, LIANG-YOU, TSAI, PAO-MING, WEI, HSIAO-FEN
Publication of US20110291544A1 publication Critical patent/US20110291544A1/en
Priority to US13/895,379 priority Critical patent/US8864540B2/en
Priority to US14/481,924 priority patent/US9142797B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B32B15/085—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyolefins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B32B15/09—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyesters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/02—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
    • B32B37/025—Transfer laminating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/10—Removing layers, or parts of layers, mechanically or chemically
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
    • B32B2037/243—Coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/206—Organic displays, e.g. OLED
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/208—Touch screens
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/0004—Cutting, tearing or severing, e.g. bursting; Cutter details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/841—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/23—Sheet including cover or casing
    • Y10T428/239—Complete cover or casing

Definitions

  • the disclosure is related to a gas barrier substrate and a fabricating method thereof, and in particular to a package of an organic electro-luminescent device and a packaging method thereof.
  • flexible substrates Compared with general rigid substrates, flexible substrates have applications in a wider range of areas. Flexible substrates have advantages such as flexibility, portability, compliance with safety standards, and wide range of applications, but they also have disadvantages such as inferior heat resistance, inferior water and oxygen resistance, inferior chemical resistance, and greater thermal expansion coefficients. Since conventional flexible substrates cannot completely block water vapor or oxygen, aging of electronic devices on the substrate is accelerated, thereby shorting the lifespan of the electronic devices. Commercial requirements are hence unable to be fulfilled. In order to make flexible substrates have better water vapor and oxygen resistance, conventional art has provided a flexible substrate with a gas barrier layer for enhancing reliability of the electronic devices. FIGS. 1 and 2 are illustrated and conventional flexible gas barrier substrate is described as follow.
  • FIG. 1 is a schematic cross-sectional diagram of a conventional flexible gas barrier substrate.
  • a conventional flexible gas barrier substrate 100 is generally fabricated on a carrier C and includes a substrate 110 and a gas barrier layer 120 .
  • the gas barrier layer 120 only covers a top surface 110 a and a sidewall 110 b of the substrate 110 , and a bottom surface 110 c contacts the carrier C.
  • the flexible gas barrier substrate 100 is detached from the carrier C, the bottom surface 110 c of the substrate 110 is exposed. Since the bottom surface 110 c of the substrate 110 is not covered by the gas barrier layer 120 , the flexible gas barrier substrate 100 warps seriously due to imbalance of stress.
  • FIG. 2 is a schematic cross-sectional diagram of another conventional flexible gas barrier substrate. Please refer to FIG. 2 .
  • a conventional flexible gas barrier substrate 200 is also fabricated on the carrier C and includes a substrate 210 , a first gas barrier layer 220 , and a second gas barrier layer 230 .
  • the first gas barrier layer 220 only covers a bottom surface 210 c of the substrate 210
  • the second gas barrier layer 230 covers a top surface 210 a and a sidewall 210 b of the substrate 210 and a sidewall 220 a of the first gas barrier layer 220 .
  • the second gas barrier layer 230 is bonded with the sidewall 220 a of the first gas barrier layer 220 .
  • the bonding strength between the second gas barrier layer 230 and the sidewall 220 a of the first gas barrier layer 220 is insufficient. Therefore, when the flexible gas barrier substrate 200 is bended, the second gas barrier layer 230 which covers the sidewall 210 b may be easily broken. Moreover, if the thickness of the first gas barrier layer 220 is increased for increasing the bonding strength between the second gas barrier layer 230 and the sidewall 220 a of the first gas barrier layer 220 , the overall thickness of the flexible gas barrier substrate 200 may increase.
  • one of the issues focused on by developers is how to effectively improve the gas barrier characteristic of the flexible gas barrier substrate without increasing the overall thickness of the flexible gas barrier substrate.
  • a gas barrier substrate which has good gas barrier abilities is provided herein.
  • a fabricating method of a gas barrier substrate for fabricating a gas barrier substrate with good gas barrier abilities is provided herein.
  • a package of an organic electro-luminescent device which has good reliability is also provided herein.
  • a packaging method of an organic electro-luminescent device for ensuring good reliability of the organic electro-luminescent device is further provided herein.
  • the disclosure provides a gas barrier substrate which includes a first gas barrier layer, a substrate, and a second gas barrier layer.
  • the first gas barrier layer has a central bonding surface and a peripheral bonding surface which surrounds the central bonding surface.
  • the substrate is bonded with the central bonding surface of the first gas barrier layer, and the second gas barrier layer entirely covers the substrate and the first gas barrier layer.
  • the second gas barrier layer is bonded with the substrate and the peripheral bonding surface of the first gas barrier layer. A minimum distance from an edge of the substrate to an edge of the first gas barrier layer is greater than a thickness of the first gas barrier layer.
  • the disclosure provides a fabricating method of a gas barrier substrate, including: forming a de-bonding layer on a carrier; forming a lift-off layer on the carrier and the de-bonding layer, forming the first gas barrier layer on the lift-off layer, wherein the first gas barrier layer has the central bonding surface and the peripheral bonding surface which surrounds the central bonding surface; forming the substrate on the central bonding surface of the first gas barrier layer and bonding the substrate with the central bonding surface; and forming the second gas barrier layer to entirely cover the substrate and the first gas barrier layer, wherein the minimum distance from the edge of the substrate to the edge of the first gas barrier layer is greater than the thickness of the first gas barrier layer.
  • the disclosure provides a package of an organic electro-luminescent device.
  • the package includes a first gas barrier substrate, a second gas barrier substrate, and an organic electro-luminescent device.
  • the first gas barrier substrate includes a first gas barrier layer, a first substrate, and a second gas barrier layer, wherein the first gas barrier layer has a first central bonding surface and a first peripheral bonding surface surrounding the first central bonding surface, the first substrate is bonded with the first central bonding surface of the first gas barrier layer, and the second gas barrier layer entirely covers the first substrate and the first gas barrier layer.
  • the second gas barrier layer is bonded with the first substrate the first peripheral surface of the first gas barrier layer, and a minimum distance from an edge of the first substrate to an edge of the first gas barrier layer is greater than a thickness of the first gas barrier layer.
  • the first gas barrier substrate is bonded with the second gas barrier substrate.
  • the organic electro-luminescent device is disposed between the first gas barrier substrate and the second gas barrier substrate.
  • the disclosure provides a packaging method of an organic electro-luminescent device, including: forming the organic electro-luminescent device on the first gas barrier substrate; providing the second gas barrier substrate; and bonding the first gas barrier substrate with the second gas barrier substrate, so that the organic electro-luminescent device is sealed between the first gas barrier substrate and the second gas barrier substrate, wherein at least one of the first gas barrier substrate and the second gas barrier substrate is fabricated by the above fabricating method of the gas barrier substrate.
  • FIG. 1A is a schematic cross-sectional diagram of a conventional flexible gas barrier substrate.
  • FIG. 2 is a schematic cross-sectional diagram of another conventional flexible gas barrier substrate.
  • FIGS. 3A to 3E are schematic cross-sectional diagrams showing a process of fabricating a gas barrier substrate according to the first embodiment of the disclosure.
  • FIGS. 3 D′ to 3 E′ are schematic cross-sectional diagrams showing another process of fabricating a gas barrier substrate.
  • FIGS. 4A to 4E are schematic cross-sectional diagrams showing a process of fabricating a gas barrier substrate according to the second embodiment of the disclosure.
  • FIGS. 4 D′ to 4 E′ are schematic cross-sectional diagrams showing another process of fabricating a gas barrier substrate.
  • FIGS. 5A to 5E are schematic cross-sectional diagrams showing a process of packaging an organic electro-luminescent device according to the third embodiment of the disclosure.
  • FIGS. 6A to 6E are schematic cross-sectional diagrams showing a process of packaging an organic electro-luminescent device according to the fourth embodiment of the disclosure.
  • FIGS. 7A to 7E are schematic cross-sectional diagrams showing a process of packaging an organic electro-luminescent device according to the fifth embodiment of the disclosure.
  • FIGS. 3A to 3E are schematic cross-sectional diagrams showing a process of fabricating a gas barrier substrate according to the first embodiment of the disclosure.
  • a de-bonding layer DBL is formed on a carrier C, and a lift-off layer L is formed on the de-bonding layer DBL and the carrier C.
  • the material of the de-bonding layer DBL is, for example, a parylene material
  • the material of the lift-off layer L is, for example, polyimide or another material which is capable of being lift off from the de-bonding layer DBL.
  • the de-bonding layer DBL may be formed by performing a surface treatment on a surface of the carrier C.
  • the lift-off layer L may also be peeled off from the carrier C along with the de-bonding layer DBL.
  • a first gas barrier layer GB 1 is formed on the lift-off layer L.
  • the first gas barrier layer GB 1 has a central bonding surface S 1 and a peripheral bonding surface S 2 surrounding the central bonding surface S 1 .
  • the first gas barrier layer GB 1 is, for example, a single thin film (such as a single silicon nitride layer) or a stacked layer formed by a plurality of thin films.
  • the first gas barrier layer GB 1 is, for example, formed by alternately stacking at least one silicon nitride layer and at least one spin-on glass (SOG) layer.
  • the first gas barrier layer GB 1 is formed by one or more pairs of a silicon nitride layer and an SOG layer.
  • the number and material of the first gas barrier layer GB 1 are not limited to the above configuration.
  • a pre-formed substrate SUB is provided, and the pre-formed substrate SUB is bonded with the central bonding surface S 1 .
  • the substrate SUB has a sidewall SW which is substantially perpendicular to the central bonding surface S 1 of the first gas barrier layer GB 1 .
  • the material of the substrate SUB is, for example, polyimide or another flexible material.
  • a second gas barrier layer GB 2 is formed to entirely cover the substrate SUB and the first gas barrier layer GB 1 , wherein the second gas barrier layer GB 2 is bonded with the substrate SUB and a peripheral bonding surface S 2 of the first gas barrier layer GB.
  • a minimum distance D from an edge (i.e. the sidewall SW) of the substrate SUB to an edge of the first gas barrier layer GB 1 is greater than a thickness T of the first gas barrier layer GB 1 .
  • the second gas barrier layer GB 2 which covers the first gas barrier layer GB 1 and the substrate SUB is, for example, a conformal thin film.
  • the second gas barrier layer GB 2 is, for example, a single thin film (such as a single silicon nitride layer) or a stacked layer formed by multiple thin films.
  • the second gas barrier layer GB 2 is, for example, formed by alternately stacking at least one silicon nitride layer and at least one SOG layer.
  • the second gas barrier layer GB 2 is formed by one or more pairs of a silicon nitride layer and an SOG layer.
  • the number and material of the second gas barrier layer GB 2 are not limited to the above configuration.
  • the bonding strength between the first gas barrier layer GB 1 and the second gas barrier layer GB 2 is effectively improved. If the first gas barrier layer GB 1 and the second gas barrier layer GB 2 have similar materials or the same material, the bonding between the first gas barrier layer GB 1 and the second gas barrier layer GB 2 is a type of homogeneous bonding, which thus provides good bonding strength.
  • the minimum distance D is greater than the thickness T of the first gas barrier layer GB 1 , compared with the conventional art ( FIG. 2 ), if water vapor is to permeate into the gas barrier substrate according to the present embodiment, a longer permeation path is required.
  • a gas barrier substrate 300 is almost complete.
  • the de-bonding layer DBL, the lift-off layer L, the first gas barrier layer GB 1 , and the second gas barrier layer GB 2 may be cut along cutting lines CL (as shown by the dashed lines CL in FIG. 3D ) so that the lift-off layer L is separated from the de-bonding layer DBL.
  • the aforementioned cutting process is, for example, a laser cutting process or another suitable cutting process.
  • the gas barrier substrate 300 includes the first gas barrier layer GB 1 , the substrate SUB, and the second gas barrier layer GB 2 .
  • the first gas barrier layer GB 1 has the central bonding surface S 1 and the peripheral bonding surface S 2 which surrounds the central bonding surface S 1 .
  • the substrate SUB is bonded with the central bonding surface S 1 of the first gas barrier layer GB 1 , and the second gas barrier layer GB 2 entirely covers the substrate SUB and the first gas barrier layer GB 1 .
  • the second gas barrier layer GB 2 is bonded with the substrate SUB and the peripheral bonding surface S 2 of the first gas barrier layer GB 1 .
  • a minimum distance D′ from the edge (which is the sidewall SW) of the substrate SUB to the edge of the first gas barrier layer GB 1 is greater than the thickness T of the first gas barrier layer GB 1 .
  • the first gas barrier layer GB 1 and the second gas barrier layer GB 2 are each, for example, a flexible gas barrier layer, and the substrate SUB is, for example, a flexible substrate.
  • the edge of the first gas barrier layer GB 1 is substantially aligned with the edge of the second gas barrier layer GB 2 .
  • FIGS. 3 D′ to 3 E′ are schematic cross-sectional diagrams showing another process of fabricating a gas barrier substrate. Please refer to FIGS. 3D , 3 E, 3 D′, and 3 E′.
  • the second gas barrier layer GB 2 which covers the first gas barrier layer GB 1 and the substrate SUB is a conformal thin film
  • the second gas barrier layer GB 2 which covers the first gas barrier layer GB 1 and the substrate SUB is a thin film which has a flat top surface.
  • FIGS. 4A to 4E are schematic cross-sectional diagrams showing a process of fabricating a gas barrier substrate according to the second embodiment of the disclosure. Please refer to FIGS. 4A to 4E .
  • a fabricating method of a gas barrier substrate 400 is similar to that in the first embodiment. The main difference in between is that a substrate SUB′ according to the present embodiment has a tapered sidewall SW′, and an acute angle ⁇ is included between the tapered sidewall SW′ and the central bonding surface 51 .
  • the substrate SUB′ is formed, for example, by coating.
  • a material layer may first be coated on the central bonding surface S 1 .
  • the material layer is then cured to form the substrate SUB′. Since the substrate SUB′ is formed by coating, the acute angle ⁇ is included between the sidewall SW′ of the substrate SUB′ and the central bonding surface S 1 .
  • FIGS. 4 D′ to 4 E′ are schematic cross-sectional diagrams showing another process of fabricating a gas barrier substrate. Please refer to FIGS. 4D , 4 E, 4 D′, and 4 E′.
  • the second gas barrier layer GB 2 which covers the first gas barrier layer GB 1 and the substrate SUB′ is a conformal thin film
  • the second gas barrier layer GB 2 which covers the first gas barrier layer GB 1 and the substrate SUB′ is a thin film which has a flat top surface.
  • FIGS. 5A to 5E are schematic cross-sectional diagrams showing a process of packaging an organic electro-luminescent device according to the third embodiment of the disclosure.
  • a de-bonding layer DBL is formed on a carrier C, and a lift-off layer L is formed on the de-bonding layer DBL and the carrier C.
  • the material of the de-bonding layer DBL is, for example, a parylene material
  • the material of the lift-off layer L is, for example, polyimide or another material which is capable of being lift off from the de-bonding layer DBL.
  • the de-bonding layer DBL may be formed by performing a surface treatment on the surface of the carrier C.
  • the lift-off layer L may also be peeled off from the carrier C along with the de-bonding layer DBL.
  • a third gas barrier layer GB 3 is formed on the lift-off layer L.
  • the third gas barrier layer GB 3 has a second central bonding surface S 3 and a second peripheral bonding surface S 4 surrounding the second central bonding surface S 4 .
  • the third gas barrier layer GB 3 is, for example, a single layer thin film (such as a single layer silicon nitride layer) or a stacked layer formed by multiple thin films.
  • the third gas barrier layer GB 3 is, for example, formed by alternately stacking at least one silicon nitride layer and at least one SOG layer.
  • the third gas barrier layer GB 3 is formed by one or more pairs of a silicon nitride layer and an SOG layer.
  • the number and material of the third gas barrier layer GB 3 are not limited to the above configuration.
  • the second substrate SUB 2 is provided, and the second substrate SUB 2 is bonded with the second central bonding surface S 3 .
  • the material of the second substrate SUB 2 is, for example, polyimide or another flexible material.
  • the lift-off layer L, the third gas barrier layer GB 3 , and the second substrate SUB 2 form a gas barrier substrate 500 .
  • an organic electro-luminescent device OLED is formed on the second substrate SUB 2 .
  • the organic electro-luminescent device OLED is, for example, an active organic electro-luminescent device or a passive organic electro-luminescent device.
  • the organic electro-luminescent device OLED may be a display or a light source.
  • the gas barrier substrate 300 is provided, and the gas barrier substrate 300 is bonded with the gas barrier substrate 500 , so that the organic electro-luminescent device OLED is sealed between the gas barrier substrate 300 and the gas barrier substrate 500 .
  • the gas barrier substrate 300 and the gas barrier substrate 500 are bonded with each other by, for example, a frame adhesive 600 .
  • a frit such as a glass frit may be used to replace the frame adhesive 600 , so that the gas barrier substrate 300 and the gas barrier substrate 500 are bonded with each other.
  • the gas barrier substrate 300 shown in FIG. 3 E′ is used.
  • the present embodiment does not limit the gas barrier substrate to be the one shown in FIG. 3 E′.
  • the gas barrier substrate 300 or 400 shown in FIG. 3E , 4 E, or 4 E′ may also be used in the present embodiment.
  • the de-bonding layer DBL, the lift-off layer L, and the third gas barrier layer GB 3 may be cut along the cutting lines CL (as shown by the dashed lines CL in FIG. 3 D′) so that the lift-off layer L is separated from the de-bonding layer DBL.
  • the aforementioned cutting process is, for example, a laser cutting process or another suitable cutting process.
  • the package of the organic electro-luminescent includes the gas barrier substrate 300 , the gas barrier substrate 500 , and the organic electro-luminescent device OLED.
  • the gas barrier substrate 300 is shown in FIG. 3 E′ and is bonded with the gas barrier substrate 500 , and the organic electro-luminescent device OLED is disposed between the gas barrier substrate 300 and the gas barrier substrate 500 .
  • FIGS. 6A to 6E are schematic cross-sectional diagrams showing a process of packaging an organic electro-luminescent device according to the fourth embodiment of the disclosure.
  • the de-bonding layer DBL is formed on the carrier C, and the lift-off layer L is formed on the de-bonding layer DBL and the carrier C.
  • the material of the de-bonding layer DBL is, for example, a parylene material
  • the material of the lift-off layer L is, for example, polyimide or another material which is capable of being lift off from the de-bonding layer DBL.
  • the de-bonding layer DBL may be formed by performing a surface treatment on the surface of the carrier C.
  • the lift-off layer may also be peeled off from the carrier C along with the de-bonding layer DBL.
  • the third gas barrier layer GB 3 is formed on the lift-off layer L.
  • the third gas barrier layer GB 3 has the second central bonding surface S 3 and the second peripheral bonding surface S 4 surrounding the second central bonding surface S 4 .
  • the third gas barrier layer GB 3 is, for example, a single thin film (such as a single silicon nitride layer) or a stacked layer formed by a plurality of thin films.
  • the third gas barrier layer GB 3 is, for example, formed by alternately stacking at least one silicon nitride layer and at least one SOG layer.
  • the third gas barrier layer GB 3 is formed by one or more pairs of a silicon nitride layer and an SOG layer.
  • the number and material of the third gas barrier layer GB 3 are not limited to the above configuration.
  • the second substrate SUB 2 is provided, and the second substrate SUB 2 is bonded with the second central bonding surface S 3 .
  • the material of the second substrate SUB 2 is, for example, polyimide or another flexible material.
  • the lift-off layer L, the third gas barrier layer GB 3 , and the second substrate SUB 2 form a gas barrier substrate 500 ′.
  • the organic electro-luminescent device OLED is formed on the second substrate SUB 2 .
  • the organic electro-luminescent device OLED is, for example, an active organic electro-luminescent device or a passive organic electro-luminescent device.
  • the organic electro-luminescent device OLED may be a display or a light source.
  • a fourth gas barrier layer GB 4 is formed to entirely cover the organic electro-luminescent device OLED, the second substrate SUB 2 , and the third gas barrier layer GB 3 .
  • the fourth gas barrier layer GB 4 is bonded with the organic electro-luminescent device OLED, the second substrate SUB 2 , and the second peripheral bonding surface S 4 of the third gas barrier layer GB 3 , and a minimum distance D′′ from an edge of the second substrate SUB 2 to an edge of the third gas barrier layer GB 3 is greater than a thickness T′ of the third gas barrier layer GB 3 .
  • the fourth gas barrier layer GB 4 which covers the third gas barrier layer GB 3 and the second substrate SUB 2 is, for example, a conformal thin film. According to other embodiments, the fourth gas barrier layer GB 4 may be a conformal thin film. As shown in FIG. 6D , the lift-off layer L, the third gas barrier layer GB 3 , the second substrate SUB 2 , and the fourth gas barrier layer GB 4 form the gas barrier substrate 500 ′.
  • the fourth gas barrier layer GB 4 is, for example, a single thin film (such as a single silicon nitride layer) or a stacked layer formed by a plurality of thin films.
  • the fourth gas barrier layer GB 4 is, for example, formed by alternately stacking at least one silicon nitride layer and at least one SOG layer.
  • the fourth gas barrier layer GB 4 is formed by one or more pairs of a silicon nitride layer and an SOG layer.
  • the number and material of the fourth gas barrier layer GB 4 are not limited to the above configuration.
  • the bonding strength between the third gas barrier layer GB 3 and the fourth gas barrier layer GB 4 is effectively improved.
  • the bonding between the third gas barrier layer GB 3 and the fourth gas barrier layer GB 4 is a type of homogeneous bonding, which thus provides good bonding strength.
  • the gas barrier substrate 300 is provided, and the gas barrier substrate 300 is bonded with the gas barrier substrate 500 ′, so that the organic electro-luminescent device OLED is sealed between the gas barrier substrate 300 and the gas barrier substrate 500 ′.
  • the gas barrier substrate 300 and the gas barrier substrate 500 ′ are bonded with each other by, for example, an adhesive layer 700 .
  • the second has barrier layer GB 2 and the fourth gas barrier layer GB 4 are bonded with each other through the adhesive layer 700 .
  • the gas barrier substrate 300 shown in FIG. 3 E′ is used.
  • the present embodiment does not limit the gas barrier substrate to be the one shown in FIG. 3 E′.
  • the gas barrier substrate 300 or 400 shown in FIG. 3E , 4 E, or 4 E′ may also be used in the present embodiment.
  • the de-bonding layer DBL, the lift-off layer L, the third gas barrier layer GB 3 , and the fourth gas barrier layer GB 4 may be cut (as shown by the dashed lines) so that the lift-off layer L is separated from the de-bonding layer DBL.
  • the aforementioned cutting process is, for example, a laser cutting process or another suitable cutting process.
  • FIGS. 7A to 7E are schematic cross-sectional diagrams showing a process of packaging an organic electro-luminescent device according to the fifth embodiment of the disclosure.
  • the de-bonding layer DBL is formed on the carrier C
  • the lift-off layer L is formed on the de-bonding layer DBL and the carrier C.
  • the material of the de-bonding layer DBL is, for example, a parylene material
  • the material of the lift-off layer L is, for example, polyimide or another material which is capable of being lift off from the de-bonding layer DBL.
  • the de-bonding layer DBL may be formed by performing a surface treatment on the surface of the carrier C.
  • the lift-off layer L may also be peeled off from the carrier C along with the de-bonding layer DBL.
  • the third gas barrier layer GB 3 is formed on the lift-off layer L.
  • the third gas barrier layer GB 3 has the second central bonding surface S 3 and the second peripheral bonding surface S 4 surrounding the second central bonding surface S 4 .
  • the third gas barrier layer GB 3 is, for example, a single thin film (such as a single silicon nitride layer) or a stacked layer formed by a plurality of thin films.
  • the third gas barrier layer GB 3 is, for example, formed by alternately stacking at least one silicon nitride layer and at least one SOG layer.
  • the third gas barrier layer GB 3 is formed by one or more pairs of a silicon nitride layer and an SOG layer.
  • the number and material of the third gas barrier layer GB 3 are not limited to the above configuration.
  • the second substrate SUB 2 is provided, and the second substrate SUB 2 is bonded with the second central bonding surface S 3 .
  • the material of the second substrate SUB 2 is, for example, polyimide or another flexible material.
  • the fourth gas barrier layer GB 4 is formed to entirely cover the second substrate SUB 2 and the third gas barrier layer GB 3 , wherein the fourth gas barrier layer GB 4 is bonded with the second substrate SUB 2 and the peripheral bonding surface S 4 of the third gas barrier layer GB 3 , and the minimum distance D′′ from the edge of the second substrate SUB 2 to the edge of the third gas barrier layer GB 3 is greater than the thickness T′ of the third gas barrier layer GB 3 .
  • the lift-off layer L, the third gas barrier layer GB 3 , the second substrate SUB 2 , and the fourth gas barrier layer GB 4 form a gas barrier substrate 500 ′′.
  • the organic electro-luminescent device OLED is formed on the fourth gas barrier layer GB 4 .
  • the organic electro-luminescent device OLED is, for example, an active organic electro-luminescent device or a passive organic electro-luminescent device.
  • the organic electro-luminescent device OLED may be a display or a light source.
  • the gas barrier substrate 300 is provided, and the gas barrier substrate 300 is bonded with the gas barrier substrate 500 ′′, so that the organic electro-luminescent device OLED is sealed between the gas barrier substrate 300 and the gas barrier substrate 500 ′′.
  • the gas barrier substrate 300 and the gas barrier substrate 500 ′′ are bonded with each other by, for example, the frame adhesive 600 .
  • a frit such as a glass frit may be used to replace the frame adhesive 600 , so that the gas barrier substrate 300 and the gas barrier substrate 500 ′′ are bonded with each other.
  • the gas barrier substrate 300 shown in FIG. 3 E′ is used.
  • the present embodiment does not limit the gas barrier substrate to be the one shown in FIG. 3 E′.
  • the gas barrier substrate 300 or 400 shown in FIG. 3E , 4 E, or 4 E′ may also be used in the present embodiment.
  • the de-bonding layer DBL, the lift-off layer L, the third gas barrier layer GB 3 , and the fourth gas barrier layer GB 4 may be cut (as shown by the dashed lines) so that the lift-off layer L is separated from the de-bonding layer DBL.
  • the aforementioned cutting process is, for example, a laser cutting process or another suitable cutting process.
  • the gas barrier substrates which have good gas barrier abilities are used for packaging the organic electro-luminescent device, the reliability of the organic electro-luminescent device is ensured.

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  • Mechanical Engineering (AREA)
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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
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