US20090256226A1 - Solid-state imaging device, production method thereof, and electronic device - Google Patents

Solid-state imaging device, production method thereof, and electronic device Download PDF

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Publication number
US20090256226A1
US20090256226A1 US12/420,570 US42057009A US2009256226A1 US 20090256226 A1 US20090256226 A1 US 20090256226A1 US 42057009 A US42057009 A US 42057009A US 2009256226 A1 US2009256226 A1 US 2009256226A1
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United States
Prior art keywords
isolation region
solid
state imaging
imaging device
semiconductor substrate
Prior art date
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Abandoned
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US12/420,570
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English (en)
Inventor
Keiji Tatani
Takuji Matsumoto
Yasushi Tateshita
Fumihiko Koga
Takashi Nagano
Takahiro Toyoshima
Tetsuji Yamaguchi
Keiichi Nakazawa
Naoyuki Miyashita
Yoshihiko Nagahama
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Sony Corp
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Sony Corp
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Filing date
Publication date
Priority claimed from JP2008199050A external-priority patent/JP2009272596A/ja
Application filed by Sony Corp filed Critical Sony Corp
Assigned to SONY CORPORATION reassignment SONY CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MIYASHITA, NAOYUKI, NAGAHAMA, YOSHIHIKO, NAKAZAWA, KEIICHI, TOYOSHIMA, TAKAHIRO, YAMAGUCHI, TETSUJI, NAGANO, TAKASHI, TATESHITA, YASUSHI, KOGA, FUMIHIKO, MATSUMOTO, TAKUJI, TATANI, KEIJI
Publication of US20090256226A1 publication Critical patent/US20090256226A1/en
Priority to US13/178,624 priority Critical patent/US8728852B2/en
Priority to US14/244,485 priority patent/US20140327052A1/en
Priority to US15/072,538 priority patent/US10438983B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
US12/420,570 2008-04-09 2009-04-08 Solid-state imaging device, production method thereof, and electronic device Abandoned US20090256226A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US13/178,624 US8728852B2 (en) 2008-04-09 2011-07-08 Solid-state imaging device, production method thereof, and electronic device
US14/244,485 US20140327052A1 (en) 2008-04-09 2014-04-03 Solid-state imaging device, production method thereof, and electronic device
US15/072,538 US10438983B2 (en) 2008-04-09 2016-03-17 Solid-state imaging device, production method thereof, and electronic device

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2008-101971 2008-04-09
JP2008101971 2008-04-09
JP2008199050A JP2009272596A (ja) 2008-04-09 2008-07-31 固体撮像装置とその製造方法、及び電子機器
JP2008-199050 2008-07-31
JP2008-201117 2008-08-04
JP2008201117A JP5487574B2 (ja) 2008-04-09 2008-08-04 固体撮像装置、及び電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/178,624 Division US8728852B2 (en) 2008-04-09 2011-07-08 Solid-state imaging device, production method thereof, and electronic device

Publications (1)

Publication Number Publication Date
US20090256226A1 true US20090256226A1 (en) 2009-10-15

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Family Applications (4)

Application Number Title Priority Date Filing Date
US12/420,570 Abandoned US20090256226A1 (en) 2008-04-09 2009-04-08 Solid-state imaging device, production method thereof, and electronic device
US13/178,624 Expired - Fee Related US8728852B2 (en) 2008-04-09 2011-07-08 Solid-state imaging device, production method thereof, and electronic device
US14/244,485 Abandoned US20140327052A1 (en) 2008-04-09 2014-04-03 Solid-state imaging device, production method thereof, and electronic device
US15/072,538 Active US10438983B2 (en) 2008-04-09 2016-03-17 Solid-state imaging device, production method thereof, and electronic device

Family Applications After (3)

Application Number Title Priority Date Filing Date
US13/178,624 Expired - Fee Related US8728852B2 (en) 2008-04-09 2011-07-08 Solid-state imaging device, production method thereof, and electronic device
US14/244,485 Abandoned US20140327052A1 (en) 2008-04-09 2014-04-03 Solid-state imaging device, production method thereof, and electronic device
US15/072,538 Active US10438983B2 (en) 2008-04-09 2016-03-17 Solid-state imaging device, production method thereof, and electronic device

Country Status (2)

Country Link
US (4) US20090256226A1 (fr)
EP (1) EP2109143B1 (fr)

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US20110081766A1 (en) * 2009-10-02 2011-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for doping a selected portion of a device
US20110108897A1 (en) * 2009-11-06 2011-05-12 Junemo Koo Image sensor
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US20110227184A1 (en) * 2010-03-18 2011-09-22 Duli Mao Apparatus Having Thinner Interconnect Line for Photodetector Array and Thicker Interconnect Line for Periphery Region
CN102339872A (zh) * 2011-09-28 2012-02-01 湖南红太阳新能源科技有限公司 一种晶体硅太阳能电池多层氮化硅减反射膜及其制备方法
US20140125849A1 (en) * 2012-11-02 2014-05-08 Heptagon Micro Optics Pte. Ltd. Optical modules including focal length adjustment and fabrication of the optical modules
US8786044B2 (en) 2011-10-07 2014-07-22 Canon Kabushiki Kaisha Photoelectric conversion device and imaging system
US20140375853A1 (en) * 2013-06-19 2014-12-25 Canon Kabushiki Kaisha Solid-state imaging apparatus, method of manufacturing the same, and camera
US20150115337A1 (en) * 2013-10-31 2015-04-30 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
US9029182B2 (en) 2012-09-06 2015-05-12 Canon Kabushiki Kaisha Method of manufacturing solid-state image sensor
US9491327B2 (en) * 2014-09-19 2016-11-08 Ricoh Company, Ltd. Photoelectric conversion element, image reading device, and image forming apparatus
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US9673250B2 (en) * 2013-06-29 2017-06-06 Sionyx, Llc Shallow trench textured regions and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9741761B2 (en) 2010-04-21 2017-08-22 Sionyx, Llc Photosensitive imaging devices and associated methods
US9761739B2 (en) 2010-06-18 2017-09-12 Sionyx, Llc High speed photosensitive devices and associated methods
US9762830B2 (en) 2013-02-15 2017-09-12 Sionyx, Llc High dynamic range CMOS image sensor having anti-blooming properties and associated methods
US20170373103A1 (en) * 2013-05-31 2017-12-28 Sony Corporation Solid-state imaging device, electronic apparatus, and manufacturing method
US9905599B2 (en) 2012-03-22 2018-02-27 Sionyx, Llc Pixel isolation elements, devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
US10244188B2 (en) 2011-07-13 2019-03-26 Sionyx, Llc Biometric imaging devices and associated methods
US10374109B2 (en) 2001-05-25 2019-08-06 President And Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US10431619B2 (en) 2016-01-27 2019-10-01 Sony Corporation Solid-state image pickup device having a pixel separation wall
CN111193888A (zh) * 2014-07-09 2020-05-22 瑞萨电子株式会社 半导体器件
US10741399B2 (en) 2004-09-24 2020-08-11 President And Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US10868072B2 (en) * 2012-11-14 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and image sensor
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US8674469B2 (en) * 2009-04-23 2014-03-18 Taiwan Semiconductor Manufacturing Company, Ltd. Isolation structure for backside illuminated image sensor
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WO2013059665A1 (fr) 2011-10-19 2013-04-25 The Trustees Of Columbia University In The City Of New York Réseau fabry-perrot ultracompact pour imagerie hyperspectrale ultracompacte
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WO2013148349A1 (fr) 2012-03-30 2013-10-03 The Trustees Of Columbia University In The City Of New York Photonique au graphène pour dispositifs électro-optiques améliorés par résonateur et interactions tout-optique
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JP6711573B2 (ja) * 2015-08-10 2020-06-17 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
JP6789653B2 (ja) 2016-03-31 2020-11-25 キヤノン株式会社 光電変換装置およびカメラ
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US8728852B2 (en) 2014-05-20
US20160197109A1 (en) 2016-07-07
US20110269259A1 (en) 2011-11-03
US10438983B2 (en) 2019-10-08
US20140327052A1 (en) 2014-11-06
EP2109143A3 (fr) 2012-05-23
EP2109143B1 (fr) 2013-05-29

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