US20080238297A1 - Organic el display and method of manufacturing the same - Google Patents

Organic el display and method of manufacturing the same Download PDF

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Publication number
US20080238297A1
US20080238297A1 US12/052,092 US5209208A US2008238297A1 US 20080238297 A1 US20080238297 A1 US 20080238297A1 US 5209208 A US5209208 A US 5209208A US 2008238297 A1 US2008238297 A1 US 2008238297A1
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Prior art keywords
organic
emitting layer
light
layer
region
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Abandoned
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US12/052,092
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English (en)
Inventor
Masuyuki Oota
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Japan Display Central Inc
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Toshiba Matsushita Display Technology Co Ltd
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Assigned to TOSHIBA MATSUSHITA DISPLAY TECHNOLOGY CO., LTD. reassignment TOSHIBA MATSUSHITA DISPLAY TECHNOLOGY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: OOTA, MASUYUKI
Publication of US20080238297A1 publication Critical patent/US20080238297A1/en
Priority to US13/037,027 priority Critical patent/US8358057B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials

Definitions

  • FIG. 1 is a plan view schematically showing a display according to a first embodiment of the present invention
  • FIG. 8 is a sectional view showing the organic EL elements of the organic EL display according to a comparative example
  • FIG. 27 is a flow chart showing an example of the manufacturing process for the display according to the sixteenth embodiment of the present invention.
  • the video signal line driver XDR outputs a video signal as a current signal (write current) I sig to each of the video signal lines DL, so as to set the gate-to-source voltage V gs of the drive transistor DR at a value corresponding to the magnitude of the video signal I sig .
  • the scan signal line driver YDR outputs a scan signal for opening the switching transistors SWb and SWc as a voltage signal to the scan signal line SL 2 to which the selected pixels PX 1 to PX 3 are connected.
  • the scan signal line driver YDR outputs a scan signal for closing the switching transistors SWa as a voltage signal to the scan signal line SL 1 to which the selected pixels PX 1 to PX 3 are connected. This terminates the selection period.
  • the regions of the emitting layer EML 1 corresponding to the emitting portions EA 1 and EA 2 are different in electrical characteristics from the region of the emitting layer EML 1 corresponding to the emitting portion EA 3 .
  • the regions of the emitting layer EML 1 corresponding to the emitting portions EA 1 and EA 2 are lower in hole mobility and/or hole injection efficiencies than the region of the emitting layer EML 1 corresponding to the emitting portion EA 3 .
  • the first and second exposures increase the hole mobilities and/or hole injection efficiencies of the emitting layers EML 1 and EML 2 at the irradiated regions.
  • the first and second exposures decrease the electron mobilities and/or electron injection efficiencies of the emitting layers EML 1 and EML 2 at the irradiated regions. In this case, the same effect as described above can be achieved.
  • the hole injection layer HIL is interposed between the pixel electrodes PE and the emitting layer EML 1 .
  • the hole-transporting layer HTL is interposed between the hole injection layer HIL and the emitting layer EML 1 .
  • the electron injection layer HIL is interposed between the counter electrode CE and the emitting layer EML 3 .
  • the electron-transporting layer ETL is interposed between the electron injection layer HIL and the emitting layer EML 3 .
  • each of the hole injection layer HIL, the hole-transporting layer HTL, the electron injection layer HIL and the electron-transporting layer HTL is a continuous layer extending over the display region.
  • the material of the counter electrode CE for example, aluminum is used.
  • the thickness of the counter electrode CE is, for example, 150 nm.
  • FIG. 25 is a flow chart showing an example of the manufacturing process for the display according to the fourteenth embodiment of the present invention.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
US12/052,092 2007-03-29 2008-03-20 Organic el display and method of manufacturing the same Abandoned US20080238297A1 (en)

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US13/037,027 US8358057B2 (en) 2007-03-29 2011-02-28 Organic EL display and method of manufacturing the same

Applications Claiming Priority (2)

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JP2007089265 2007-03-29
JP2007-089265 2007-03-29

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US20080238297A1 true US20080238297A1 (en) 2008-10-02

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US (2) US20080238297A1 (https=)
JP (3) JP2008270782A (https=)
KR (1) KR100961343B1 (https=)
TW (1) TWI380738B (https=)

Cited By (19)

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US20090108741A1 (en) * 2007-10-26 2009-04-30 Shuhei Yokoyama Organic el display device and method of manufacturing the same
US20090243466A1 (en) * 2008-03-31 2009-10-01 Shuhei Yokoyama Organic el display device and method of manufacturing the same
US20100176412A1 (en) * 2009-01-14 2010-07-15 Shuhei Yokoyama Organic el device and method of manufacturing the same
US20100301741A1 (en) * 2009-06-01 2010-12-02 Samsung Mobile Display Co., Ltd. Organic light emitting device
US20110108812A1 (en) * 2009-11-06 2011-05-12 Shiro Sumita Organic el device
US20110148290A1 (en) * 2007-03-29 2011-06-23 Masuyuki Oota Organic el display and method of manufacturing the same
US20110198630A1 (en) * 2010-02-16 2011-08-18 Shiro Sumita Organic el device
US20120018749A1 (en) * 2010-07-23 2012-01-26 Sang-Pil Lee Organic light emitting display apparatus and method for manufacturing the same
US8110826B2 (en) 2008-09-26 2012-02-07 Toshiba Mobile Display Co., Ltd. Organic EL display device
US9343705B2 (en) 2012-09-24 2016-05-17 Kabushiki Kaisha Toshiba Light emitting element and light emitting device including a conductive section
US9425432B2 (en) 2012-09-25 2016-08-23 Kabushiki Kaisha Toshiba Organic electroluminescent element and light emitting device with optical path control layer
US9502693B2 (en) * 2015-01-06 2016-11-22 Samsung Display Co., Ltd. Method of manufacturing organic light-emitting display apparatus
CN111133499A (zh) * 2017-04-13 2020-05-08 香港北大青鸟显示有限公司 Led-oled混合自发射显示器
US10665639B2 (en) * 2014-08-20 2020-05-26 Samsung Display Co., Ltd. Display device and method for manufacturing the same
US20220209172A1 (en) * 2020-12-24 2022-06-30 Lg Display Co., Ltd. Light Emitting Display Device
US11404485B2 (en) * 2018-09-07 2022-08-02 Boe Technology Group Co., Ltd. Array substrate, method of fabricating array substrate, and display panel
US20240155869A1 (en) * 2021-03-11 2024-05-09 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating display device
US12604640B2 (en) 2020-12-29 2026-04-14 Semiconductor Energy Laboratory Co., Ltd. Display panel, data processing device, and manufacturing method of the display panel
US12615909B2 (en) 2021-06-30 2026-04-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and light-emitting apparatus

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JP5670896B2 (ja) * 2008-07-24 2015-02-18 コーニンクレッカ フィリップス エヌ ヴェ 照明装置及び方法
DE102008054435A1 (de) * 2008-12-09 2010-06-10 Universität Zu Köln Organische Leuchtdiode mit optischem Resonator nebst Herstellungsverfahren
JP5126545B2 (ja) * 2009-02-09 2013-01-23 ソニー株式会社 表示装置の製造方法
KR101094287B1 (ko) * 2009-10-09 2011-12-19 삼성모바일디스플레이주식회사 유기 발광 표시 장치
JP5117473B2 (ja) * 2009-11-06 2013-01-16 株式会社ジャパンディスプレイセントラル 有機ｅｌ装置
JP5117472B2 (ja) * 2009-11-06 2013-01-16 株式会社ジャパンディスプレイセントラル 有機ｅｌ装置
JP5242647B2 (ja) * 2010-09-07 2013-07-24 株式会社ジャパンディスプレイセントラル 有機ｅｌ装置
KR102042534B1 (ko) * 2013-10-25 2019-11-08 엘지디스플레이 주식회사 유기 전계 발광 표시 패널 및 그 제조 방법
KR101667405B1 (ko) 2014-06-04 2016-10-28 주식회사 다원시스 줄 가열을 이용한 유기막증착용 도너 기판 및 그의 제조 방법
WO2018181049A1 (ja) * 2017-03-30 2018-10-04 株式会社クオルテック Ｅｌ表示パネルの製造方法、ｅｌ表示パネルの製造装置、ｅｌ表示パネル、およびｅｌ表示装置
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JP5328060B2 (ja) 2013-10-30
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TW200908787A (en) 2009-02-16
KR100961343B1 (ko) 2010-06-04

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