US20080112093A1 - Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device - Google Patents

Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device Download PDF

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Publication number
US20080112093A1
US20080112093A1 US11/899,486 US89948607A US2008112093A1 US 20080112093 A1 US20080112093 A1 US 20080112093A1 US 89948607 A US89948607 A US 89948607A US 2008112093 A1 US2008112093 A1 US 2008112093A1
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Prior art keywords
layer
free layer
tunneling magnetoresistance
magnetoresistance device
free
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Abandoned
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US11/899,486
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English (en)
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Masashige Sato
Shinjiro Umehara
Takahiro Ibusuki
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Fujitsu Ltd
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Fujitsu Ltd
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Assigned to FUJITSU LIMITED reassignment FUJITSU LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: IBUSUKI, TAKAHIRO, SATO, MASASHIGE, UMEHARA, SHINJIRO
Publication of US20080112093A1 publication Critical patent/US20080112093A1/en
Priority to US13/046,567 priority Critical patent/US8072714B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3295—Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/303—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices with exchange coupling adjustment of magnetic film pairs, e.g. interface modifications by reduction, oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3204—Exchange coupling of amorphous multilayers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1114—Magnetoresistive having tunnel junction effect
US11/899,486 2006-11-14 2007-09-06 Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device Abandoned US20080112093A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/046,567 US8072714B2 (en) 2006-11-14 2011-03-11 Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device

Applications Claiming Priority (2)

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JP2006307987A JP5003109B2 (ja) 2006-11-14 2006-11-14 強磁性トンネル接合素子、その製造方法、及びそれを用いた磁気ヘッド、磁気メモリ
JP2006-307987 2006-11-14

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JP (1) JP5003109B2 (ja)
KR (1) KR100917560B1 (ja)
CN (1) CN101183704B (ja)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090244791A1 (en) * 2008-03-26 2009-10-01 Tsann Lin Current-perpendicular-to-plane (cpp) read sensor with multiple ferromagnetic sense layers
US20100176471A1 (en) * 2009-01-13 2010-07-15 Qualcomm Incorporated Magnetic Element With Storage Layer Materials
US20110134563A1 (en) * 2009-12-08 2011-06-09 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive effect head having a multilayered pinned layer or free layer and systems thereof
US20110227179A1 (en) * 2010-03-17 2011-09-22 Kabushiki Kaisha Toshiba Magnetoresistive element, method of manufacturing the same, and magnetic memory
EP2472521A1 (en) * 2010-12-31 2012-07-04 Grandis, Inc. Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
US20150069543A1 (en) * 2013-09-06 2015-03-12 Makoto Nagamine Magnetoresistive element and method of manufacturing the same
US9097754B2 (en) 2012-10-31 2015-08-04 Hitachi High-Technologies Corporation Method of manufacturing magnetoresistive element
US9099124B1 (en) * 2014-09-28 2015-08-04 HGST Netherlands B.V. Tunneling magnetoresistive (TMR) device with MgO tunneling barrier layer and nitrogen-containing layer for minimization of boron diffusion
US20160072047A1 (en) * 2014-09-08 2016-03-10 Satoshi Seto Semiconductor memory device and manufacturing method thereof
US9478730B2 (en) 2010-12-31 2016-10-25 Samsung Electronics Co., Ltd. Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
GB2537999A (en) * 2015-04-30 2016-11-02 HGST Netherlands BV Tunneling magnetoresistive (TMR) device with magnesium oxide tunneling barrier layer and free layer having insertion layer
US10950260B1 (en) 2020-04-17 2021-03-16 Western Digital Technologies, Inc. Magnetoresistive sensor with improved magnetic properties and magnetostriction control
CN113866691A (zh) * 2021-12-02 2021-12-31 北京芯可鉴科技有限公司 隧穿磁电阻传感器及其制备方法、使用方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5429480B2 (ja) * 2007-04-24 2014-02-26 日本電気株式会社 磁気抵抗素子、ｍｒａｍ、及び磁気センサー
CN102074329B (zh) * 2009-11-23 2012-04-18 中国科学院物理研究所 一种磁性多层膜及其磁逻辑元件和磁性随机存取存储器
KR101093976B1 (ko) * 2010-01-14 2011-12-15 고려대학교 산학협력단 수직자기이방성을 가지는 코발트-철-보론 박막 제조 방법 및 이를 이용하여 제조한 자기 랜덤 액세스 메모리
KR101209328B1 (ko) * 2010-01-14 2012-12-06 고려대학교 산학협력단 수직자기이방성을 가지는 코발트-철-보론/팔라듐 다층박막 및 이를 이용하여 제조한 자기 랜덤 액세스 메모리
TWI452743B (zh) * 2011-03-03 2014-09-11 Voltafield Technology Corp 磁阻感測器的製造方法
US8450722B2 (en) * 2011-07-15 2013-05-28 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetoresistive random access memory and method of making the same
KR20130015927A (ko) * 2011-08-05 2013-02-14 에스케이하이닉스 주식회사 멀티 레벨을 갖는 자기 저항 메모리 장치 및 그 구동방법
US8879214B2 (en) * 2011-12-21 2014-11-04 HGST Netherlands B.V. Half metal trilayer TMR reader with negative interlayer coupling
US8570792B2 (en) 2012-01-24 2013-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetoresistive random access memory
US8884386B2 (en) 2012-02-02 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM device and fabrication method thereof
RU2522714C2 (ru) * 2012-08-09 2014-07-20 Федеральное государственное унитарное предприятие федеральный научно-производственный центр "Научно-исследовательский институт измерительных систем им. Ю.Е. Седакова" Способ формирования магниторезистивного элемента памяти на основе туннельного перехода и его структура
US8988923B2 (en) * 2012-09-11 2015-03-24 The Regents Of The University Of California Nonvolatile magneto-electric random access memory circuit with burst writing and back-to-back reads
US10096767B2 (en) * 2013-03-09 2018-10-09 Taiwan Semiconductor Manufacturing Company, Ltd. Elongated magnetoresistive tunnel junction structure
US9958511B2 (en) 2014-12-08 2018-05-01 Infineon Technologies Ag Soft switching of magnetization in a magnetoresistive sensor
CN109314181B (zh) * 2016-06-20 2022-09-30 国立大学法人东北大学 隧道磁阻元件及其制备方法
US10534047B2 (en) * 2017-03-30 2020-01-14 Qualcomm Incorporated Tunnel magneto-resistive (TMR) sensors employing TMR devices with different magnetic field sensitivities for increased detection sensitivity
US20190178954A1 (en) * 2017-12-11 2019-06-13 Allegro Microsystems, Llc Magnetoresistance Element Having Selected Characteristics To Achieve A Desired Linearity
US10777734B2 (en) * 2018-12-19 2020-09-15 Globalfoundries Singapore Pte. Ltd. Magnetic memory devices with magnetic field sensing and shielding
CN111613720B (zh) * 2019-02-25 2022-09-09 上海磁宇信息科技有限公司 一种磁性随机存储器存储单元及磁性随机存储器

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6181537B1 (en) * 1999-03-29 2001-01-30 International Business Machines Corporation Tunnel junction structure with junction layer embedded in amorphous ferromagnetic layers
US6436526B1 (en) * 1999-06-17 2002-08-20 Matsushita Electric Industrial Co., Ltd. Magneto-resistance effect element, magneto-resistance effect memory cell, MRAM and method for performing information write to or read from the magneto-resistance effect memory cell
US20030169542A1 (en) * 2002-03-07 2003-09-11 Hardayal Singh Gill Tunnel junction sensor with a multilayer free-layer structure
US20040229430A1 (en) * 2003-05-14 2004-11-18 Frank Findeis Fabrication process for a magnetic tunnel junction device
US20040257719A1 (en) * 2001-10-12 2004-12-23 Kazuhiro Ohba Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof
US20050110004A1 (en) * 2003-11-24 2005-05-26 International Business Machines Corporation Magnetic tunnel junction with improved tunneling magneto-resistance
US7081658B2 (en) * 2004-06-28 2006-07-25 International Business Machines Corporation Techniques for reducing Neel coupling in toggle switching semiconductor devices
US7116533B2 (en) * 2000-09-21 2006-10-03 Fujitsu Limited Magnetoresistive sensor
US7246427B2 (en) * 2004-02-03 2007-07-24 Headway Technologies, Inc. Method to achieve both narrow track width and effective longitudinal stabilization in a CPP GMR read head
US7304359B2 (en) * 2005-03-09 2007-12-04 Korea University Foundation Magnetic tunnel junction structure with amorphous NiFeSiB free layer
US7595520B2 (en) * 2006-07-31 2009-09-29 Magic Technologies, Inc. Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same
US7746602B2 (en) * 2006-06-21 2010-06-29 Hitachi Global Storage Technologies Netherlands B.V. Magnetic read head with reduced shunting
US7746603B2 (en) * 2006-12-19 2010-06-29 Hitachi Global Storage Technologies Netherlands B.V. CPP Magnetoresistive head with different thickness free layers for improved signal to noise ratio
US7751156B2 (en) * 2006-09-29 2010-07-06 Hitachi Global Storage Technologies Netherlands, B.V. Dual-layer free layer in a tunneling magnetoresistance (TMR) element
US7791845B2 (en) * 2006-12-26 2010-09-07 Hitachi Global Storage Technologies Netherlands B.V. Tunneling magnetoresistive sensor having a high iron concentration free layer and an oxides of magnesium barrier layer
US7800868B2 (en) * 2005-12-16 2010-09-21 Seagate Technology Llc Magnetic sensing device including a sense enhancing layer

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3327375B2 (ja) * 1996-04-26 2002-09-24 富士通株式会社 磁気抵抗効果型トランスデューサ、その製造方法及び磁気記録装置
JP2871670B1 (ja) 1997-03-26 1999-03-17 富士通株式会社 強磁性トンネル接合磁気センサ、その製造方法、磁気ヘッド、および磁気記録／再生装置
JP2001068760A (ja) * 1999-08-31 2001-03-16 Hitachi Ltd 強磁性トンネル接合素子
JP4780878B2 (ja) * 2001-08-02 2011-09-28 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
US6531723B1 (en) * 2001-10-16 2003-03-11 Motorola, Inc. Magnetoresistance random access memory for improved scalability
JP2003218424A (ja) * 2002-01-18 2003-07-31 Fujitsu Ltd 磁気抵抗効果膜
JP2003289133A (ja) 2002-03-28 2003-10-10 Sony Corp 磁気メモリ素子、そのメモリ素子を含む集積回路または磁気メモリ装置、その集積回路または磁気メモリ装置を組み込んだ電子機器
JP2003304012A (ja) * 2002-04-10 2003-10-24 Matsushita Electric Ind Co Ltd トンネル磁気抵抗効果素子
JP4178867B2 (ja) * 2002-08-02 2008-11-12 ソニー株式会社 磁気抵抗効果素子及び磁気メモリ装置
KR100512180B1 (ko) 2003-07-10 2005-09-02 삼성전자주식회사 자기 랜덤 엑세스 메모리 소자의 자기 터널 접합 및 그의형성방법
US7149105B2 (en) * 2004-02-24 2006-12-12 Infineon Technologies Ag Magnetic tunnel junctions for MRAM devices
US6977181B1 (en) * 2004-06-17 2005-12-20 Infincon Technologies Ag MTJ stack with crystallization inhibiting layer
US7791844B2 (en) * 2005-12-14 2010-09-07 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive sensor having a magnetically stable free layer with a positive magnetostriction
US7663848B1 (en) * 2006-07-14 2010-02-16 Grandis, Inc. Magnetic memories utilizing a magnetic element having an engineered free layer
US7760474B1 (en) * 2006-07-14 2010-07-20 Grandis, Inc. Magnetic element utilizing free layer engineering
JP2008192827A (ja) * 2007-02-05 2008-08-21 Alps Electric Co Ltd トンネル型磁気検出素子

Patent Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6181537B1 (en) * 1999-03-29 2001-01-30 International Business Machines Corporation Tunnel junction structure with junction layer embedded in amorphous ferromagnetic layers
US6436526B1 (en) * 1999-06-17 2002-08-20 Matsushita Electric Industrial Co., Ltd. Magneto-resistance effect element, magneto-resistance effect memory cell, MRAM and method for performing information write to or read from the magneto-resistance effect memory cell
US7116533B2 (en) * 2000-09-21 2006-10-03 Fujitsu Limited Magnetoresistive sensor
US20040257719A1 (en) * 2001-10-12 2004-12-23 Kazuhiro Ohba Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof
US7262064B2 (en) * 2001-10-12 2007-08-28 Sony Corporation Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof
US20030169542A1 (en) * 2002-03-07 2003-09-11 Hardayal Singh Gill Tunnel junction sensor with a multilayer free-layer structure
US6674617B2 (en) * 2002-03-07 2004-01-06 International Business Machines Corporation Tunnel junction sensor with a multilayer free-layer structure
US20040229430A1 (en) * 2003-05-14 2004-11-18 Frank Findeis Fabrication process for a magnetic tunnel junction device
US20050110004A1 (en) * 2003-11-24 2005-05-26 International Business Machines Corporation Magnetic tunnel junction with improved tunneling magneto-resistance
US7246427B2 (en) * 2004-02-03 2007-07-24 Headway Technologies, Inc. Method to achieve both narrow track width and effective longitudinal stabilization in a CPP GMR read head
US7081658B2 (en) * 2004-06-28 2006-07-25 International Business Machines Corporation Techniques for reducing Neel coupling in toggle switching semiconductor devices
US7304359B2 (en) * 2005-03-09 2007-12-04 Korea University Foundation Magnetic tunnel junction structure with amorphous NiFeSiB free layer
US7800868B2 (en) * 2005-12-16 2010-09-21 Seagate Technology Llc Magnetic sensing device including a sense enhancing layer
US7746602B2 (en) * 2006-06-21 2010-06-29 Hitachi Global Storage Technologies Netherlands B.V. Magnetic read head with reduced shunting
US7595520B2 (en) * 2006-07-31 2009-09-29 Magic Technologies, Inc. Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same
US20090325319A1 (en) * 2006-07-31 2009-12-31 Magic Technologies, Inc. Novel capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same
US7751156B2 (en) * 2006-09-29 2010-07-06 Hitachi Global Storage Technologies Netherlands, B.V. Dual-layer free layer in a tunneling magnetoresistance (TMR) element
US7746603B2 (en) * 2006-12-19 2010-06-29 Hitachi Global Storage Technologies Netherlands B.V. CPP Magnetoresistive head with different thickness free layers for improved signal to noise ratio
US7791845B2 (en) * 2006-12-26 2010-09-07 Hitachi Global Storage Technologies Netherlands B.V. Tunneling magnetoresistive sensor having a high iron concentration free layer and an oxides of magnesium barrier layer

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8164863B2 (en) * 2008-03-26 2012-04-24 Hitachi Global Storage Technologies Netherlands B.V. Current-perpendicular-to-plane (CPP) read sensor with multiple ferromagnetic sense layers
US20090244791A1 (en) * 2008-03-26 2009-10-01 Tsann Lin Current-perpendicular-to-plane (cpp) read sensor with multiple ferromagnetic sense layers
US20100176471A1 (en) * 2009-01-13 2010-07-15 Qualcomm Incorporated Magnetic Element With Storage Layer Materials
WO2010083233A1 (en) * 2009-01-13 2010-07-22 Qualcomm Incorporated Magnetic element with storage layer materials
US8823120B2 (en) 2009-01-13 2014-09-02 Qualcomm Incorporated Magnetic element with storage layer materials
US8536669B2 (en) 2009-01-13 2013-09-17 Qualcomm Incorporated Magnetic element with storage layer materials
US20110134563A1 (en) * 2009-12-08 2011-06-09 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive effect head having a multilayered pinned layer or free layer and systems thereof
US8514527B2 (en) * 2009-12-08 2013-08-20 HGST Netherlands B.V. Magnetoresistive effect head having a multilayered pinned layer and/or free layer having amorphous and crystalline layers, and systems thereof
US8530887B2 (en) * 2010-03-17 2013-09-10 Kabushiki Kaisha Toshiba Magnetoresistive element, method of manufacturing the same, and magnetic memory
US20110227179A1 (en) * 2010-03-17 2011-09-22 Kabushiki Kaisha Toshiba Magnetoresistive element, method of manufacturing the same, and magnetic memory
EP2472521A1 (en) * 2010-12-31 2012-07-04 Grandis, Inc. Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
US9478730B2 (en) 2010-12-31 2016-10-25 Samsung Electronics Co., Ltd. Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
US20120168885A1 (en) * 2010-12-31 2012-07-05 Grandis, Inc. Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
KR101910922B1 (ko) * 2010-12-31 2018-10-24 삼성세미콘덕터, 인코포레이티드 스핀 전달 토크 메모리에서의 사용을 위한 삽입층들을 갖는 자성층들을 제공하는 방법 및 시스템
US8432009B2 (en) * 2010-12-31 2013-04-30 Grandis, Inc. Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
TWI587298B (zh) * 2010-12-31 2017-06-11 三星半導體股份有限公司 提供自旋轉移力矩記憶體用之具有插入層的磁性層的方法及其系統
US9097754B2 (en) 2012-10-31 2015-08-04 Hitachi High-Technologies Corporation Method of manufacturing magnetoresistive element
US9142756B2 (en) * 2013-09-06 2015-09-22 Makoto Nagamine Tunneling magnetoresistive element having a high MR ratio
US20150069543A1 (en) * 2013-09-06 2015-03-12 Makoto Nagamine Magnetoresistive element and method of manufacturing the same
US20160072047A1 (en) * 2014-09-08 2016-03-10 Satoshi Seto Semiconductor memory device and manufacturing method thereof
US9099124B1 (en) * 2014-09-28 2015-08-04 HGST Netherlands B.V. Tunneling magnetoresistive (TMR) device with MgO tunneling barrier layer and nitrogen-containing layer for minimization of boron diffusion
GB2537999A (en) * 2015-04-30 2016-11-02 HGST Netherlands BV Tunneling magnetoresistive (TMR) device with magnesium oxide tunneling barrier layer and free layer having insertion layer
GB2537999B (en) * 2015-04-30 2018-10-10 HGST Netherlands BV Tunneling magnetoresistive (TMR) device with magnesium oxide tunneling barrier layer and free layer having insertion layer
US10950260B1 (en) 2020-04-17 2021-03-16 Western Digital Technologies, Inc. Magnetoresistive sensor with improved magnetic properties and magnetostriction control
CN113866691A (zh) * 2021-12-02 2021-12-31 北京芯可鉴科技有限公司 隧穿磁电阻传感器及其制备方法、使用方法

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