KR100917560B1 - 강자성 터널 접합 소자, 그 제조 방법, 및 그것을 이용한자기 헤드, 자기 메모리 - Google Patents
강자성 터널 접합 소자, 그 제조 방법, 및 그것을 이용한자기 헤드, 자기 메모리 Download PDFInfo
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- KR100917560B1 KR100917560B1 KR1020070096414A KR20070096414A KR100917560B1 KR 100917560 B1 KR100917560 B1 KR 100917560B1 KR 1020070096414 A KR1020070096414 A KR 1020070096414A KR 20070096414 A KR20070096414 A KR 20070096414A KR 100917560 B1 KR100917560 B1 KR 100917560B1
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- tunnel junction
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 76
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 230000005641 tunneling Effects 0.000 title claims description 7
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 121
- 230000005415 magnetization Effects 0.000 claims abstract description 51
- 230000008859 change Effects 0.000 claims abstract description 47
- 230000004888 barrier function Effects 0.000 claims abstract description 36
- 239000000696 magnetic material Substances 0.000 claims abstract description 29
- 239000003302 ferromagnetic material Substances 0.000 claims abstract description 22
- 238000002425 crystallisation Methods 0.000 claims description 31
- 230000008025 crystallization Effects 0.000 claims description 31
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 27
- 229910019236 CoFeB Inorganic materials 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 14
- 230000002401 inhibitory effect Effects 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 13
- 229910003321 CoFe Inorganic materials 0.000 claims description 12
- 230000001629 suppression Effects 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 230000003993 interaction Effects 0.000 claims description 8
- 239000002885 antiferromagnetic material Substances 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 229910052726 zirconium Inorganic materials 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 230000008093 supporting effect Effects 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 3
- 230000007423 decrease Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 317
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 13
- 239000000395 magnesium oxide Substances 0.000 description 13
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 230000001939 inductive effect Effects 0.000 description 5
- 230000005381 magnetic domain Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 229910019222 CoCrPt Inorganic materials 0.000 description 1
- 229910002546 FeCo Inorganic materials 0.000 description 1
- 241000883306 Huso huso Species 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910008322 ZrN Inorganic materials 0.000 description 1
- 229910003134 ZrOx Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- FWZTTZUKDVJDCM-CEJAUHOTSA-M disodium;(2r,3r,4s,5s,6r)-2-[(2s,3s,4s,5r)-3,4-dihydroxy-2,5-bis(hydroxymethyl)oxolan-2-yl]oxy-6-(hydroxymethyl)oxane-3,4,5-triol;iron(3+);oxygen(2-);hydroxide;trihydrate Chemical compound O.O.O.[OH-].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Na+].[Na+].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 FWZTTZUKDVJDCM-CEJAUHOTSA-M 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000001976 improved effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 102000045222 parkin Human genes 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- G—PHYSICS
- G11—INFORMATION STORAGE
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- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
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Abstract
Description
Claims (10)
- 자화 방향이 고정된 강자성 재료로 이루어지는 핀드층과,상기 핀드층 상에 배치되고, 전자가 터널 현상에 의해 투과하는 두께의 배리어층과,상기 배리어층 상에 배치되고, 외부 자장의 영향을 받아 자화 방향이 변화되는 비정질 또는 미결정질의 연자성 재료로 형성된 제1 프리층과,상기 제1 프리층 상에 배치되고, 외부 자장의 영향을 받아서 자화 방향이 변화되는 동시에, 상기 제1 프리층과 교환 결합한 결정질의 연자성 재료로 형성된 제2 프리층을 갖는 강자성 터널 접합 소자.
- 제1항에 있어서, 상기 제1 프리층은, CoFe에, B, C, Al, Si, 및 Zr로 이루어지는 군으로부터 선택된 적어도 1개의 첨가 원소를 함유시킨 연자성 재료로 형성되어 있는, 강자성 터널 접합 소자.
- 제1항에 있어서, 상기 제1 프리층은, CoFeB로 형성되어 있으며, B 농도가 10원자% 이상인, 강자성 터널 접합 소자.
- 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 제2 프리층은, 면심 입방 구조를 갖는 다결정질이며, 무배향 또는 (111)면이 우선적으로 기판 표면에 평행하게 배향하고 있는, 강자성 터널 접합 소자.
- 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 제2 프리층의 보자력이, 상기 제1 프리층의 보자력보다도 작은, 강자성 터널 접합 소자.
- 제1항 내지 제3항 중 어느 한 항에 있어서, 또한, 상기 제2 프리층의 결정 구조를 이어받아 상기 제1 프리층이 결정화되는 것을 방지하는 결정화 억제층이, 상기 제1 프리층과 제2 프리층 사이에 배치되어 있는, 강자성 터널 접합 소자.
- (a) 지지 기판 상에, 반강자성 재료로 이루어지는 피닝층을 형성하는 공정과,(b) 상기 피닝층 상에, 상기 피닝층과의 교환 상호 작용에 의해 자화 방향이 고정된 강자성 재료로 이루어지는 핀드층을 형성하는 공정과,(c) 상기 핀드층 상에, 전자가 터널 현상에 의해 투과하는 두께의 배리어층을 형성하는 공정과,(d) 상기 배리어층 상에, 비정질 또는 미결정질의 연자성 재료로 이루어지는 제1 프리층을 형성하는 공정과,(e) 상기 제1 프리층의 표면을, 질소 플라즈마에 노출시키는 공정과,(f) 질소 플라즈마에 노출된 상기 제1 프리층 상에, 결정질의 연자성 재료로 이루어지는 제2 프리층을 형성하는 공정과,(g) 상기 지지 기판부터 제2 프리층까지의 적층 구조체를 자장 중에 배치하고, 상기 피닝층의 규칙화 열처리를 행하는 공정을 갖는 강자성 터널 접합 소자의 제조 방법.
- (a) 지지 기판 상에, 반강자성 재료로 이루어지는 피닝층을 형성하는 공정과,(b) 상기 피닝층 상에, 상기 피닝층과의 교환 상호 작용에 의해 자화 방향이 고정된 강자성 재료로 이루어지는 핀드층을 형성하는 공정과,(c) 상기 핀드층 상에, 전자가 터널 현상에 의해 투과하는 두께의 배리어층을 형성하는 공정과,(d) 상기 배리어층 상에, 비정질 또는 미결정질의 연자성 재료로 이루어지는 제1 프리층을 형성하는 공정과,(e) 상기 제1 프리층 상에, 결정화 억제층을 형성하는 공정과,(f) 상기 결정화 억제층 상에, 결정질의 연자성 재료로 이루어지는 제2 프리층을 형성하는 공정과,(g) 상기 지지 기판부터 제2 프리층까지의 적층 구조체를 자장 중에 배치하고, 상기 피닝층의 규칙화 열처리를 행하는 공정을 갖고,상기 결정화 억제층은, 상기 공정(g)에 있어서, 상기 제2 프리층의 결정 구조를 이어받아서 상기 제1 프리층이 결정화되는 것을 억제하는, 강자성 터널 접합 소자의 제조 방법.
- 제1항 내지 제3항 중 어느 한 항에 기재된 강자성 터널 접합 소자를 구비한 자기 헤드.
- 제1항 내지 제3항 중 어느 한 항에 기재된 강자성 터널 접합 소자와,상기 강자성 터널 접합 소자에 자장을 인가하여, 상기 강자성 터널 접합 소자의 제1 및 제2 프리층의 자화 방향을 변화시키는 기입 수단과,상기 강자성 터널 접합 소자에 센스 전류를 흘려, 상기 강자성 터널 접합 소자의 저항을 검출하는 판독 수단을 갖는 자기 메모리.
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US20110164448A1 (en) | 2011-07-07 |
KR20080043696A (ko) | 2008-05-19 |
CN101183704B (zh) | 2012-05-23 |
US20080112093A1 (en) | 2008-05-15 |
US8072714B2 (en) | 2011-12-06 |
JP5003109B2 (ja) | 2012-08-15 |
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