US20070166216A1 - Cerium salt, producing method thereof, cerium oxide and cerium based polishing slurry - Google Patents

Cerium salt, producing method thereof, cerium oxide and cerium based polishing slurry Download PDF

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US20070166216A1
US20070166216A1 US10/571,583 US57158304A US2007166216A1 US 20070166216 A1 US20070166216 A1 US 20070166216A1 US 57158304 A US57158304 A US 57158304A US 2007166216 A1 US2007166216 A1 US 2007166216A1
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cerium
salt
insoluble component
solution
cerium oxide
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Kanshi Chinone
Seiji Miyaoka
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Resonac Corp
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Hitachi Chemical Co Ltd
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Assigned to HITACHI CHEMICAL CO., LTD. reassignment HITACHI CHEMICAL CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHINONE, KANSHI, MIYAOKA, SEIJI
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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01FCOMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00Compounds of rare earth metals
    • C01F17/10Preparation or treatment, e.g. separation or purification
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01FCOMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00Compounds of rare earth metals
    • C01F17/20Compounds containing only rare earth metals as the metal element
    • C01F17/206Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C01F17/224Oxides or hydroxides of lanthanides
    • C01F17/235Cerium oxides or hydroxides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01FCOMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00Compounds of rare earth metals
    • C01F17/20Compounds containing only rare earth metals as the metal element
    • C01F17/247Carbonates
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1409Abrasive particles per se
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/31051Planarisation of the insulating layers
    • H01L21/31053Planarisation of the insulating layers involving a dielectric removal step
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/61Micrometer sized, i.e. from 1-100 micrometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/62Submicrometer sized, i.e. from 0.1-1 micrometer

Definitions

  • the present invention relates to a high purity cerium salt in which impurity particles are reduced and a producing method thereof, cerium oxide obtained by processing the cerium salt at a high temperature, and a cerium based polishing slurry that uses the cerium oxide.
  • an optical disc substrate, a magnetic disc, a glass substrate for use in flat panel displays, a watch plate, a camera lens, a glass material used for various kinds of lenses for use in optical components, a crystal material such as filters, a substrate such as silicon wafer for use in semiconductor or the like, and an insulating film, a metal layer, a barrier layer and so on formed in the respective steps in the manufacture of a semiconductor device can be cited.
  • Surfaces of the materials are required to polish with high precision. Accordingly, a polishing agent in which for instance silica, zirconium oxide, alumina and so on are used singularly or in a combination of at least two kinds thereof as polishing particles is generally used.
  • the polishing agent for instance, one in state of slurry in which polishing particles are dispersed in a liquid, one in which polishing particles are solidified together with a binder such as a resin or others, and one in which polishing particles are adhered and/or fixed on a surface of a base material such as fiber, resin, metal or the like by use of fine particles alone or together with a binder are generally used as the polishing agent.
  • Cerium oxide used mainly in the cerium based polishing slurry can be produced by calcining a cerium salt at a high temperature followed by as needs arise pulverizing and classifying.
  • a cerium compound such as an ore containing rare earths containing at least cerium (bastnaesite ore, heavy sand, parankerite and so on) or the like is subjected to a mineral processing (separation, acid leaching and so on) to remove other valuable matters and unnecessary veinstones, and thereby a rare earth concentrate (bastnaesite concentrate, monazite concentrate, Chinese complex concentrate and so on) is obtained.
  • the rare earth concentrate is chemically processed (alkali decomposition reaction, sulfuric acid decomposition reaction, hydroxide fractional precipitation and so on) to reduce insoluble components such as impurities or the like, further subjected to a solvent extraction, as needs arise, to reduce rare earths such as neodymium, and thereby a cerium-containing rare earth salt solution is obtained.
  • a precipitating agent (ammonium hydrogen carbonate, aqueous ammonia, sodium hydrogen carbonate, sodium carbonate, oxalic acid and so on) is added to generate a precipitate (rare earth carbonate, rare earth hydroxide, rare earth oxalate and so on), and thereby a cerium salt is obtained (the Japanese Patent Application Laid-Open No. 2002-371267).
  • the cerium-containing rare earth salt solution costs much in transportation or storage thereof, in some cases, the rare earth salt solution is concentrated under heating, followed by being cooled and solidified to obtain rare earth chloride or the like. After transporting or storing, the rare earth chloride is dissolved with water or diluted acid again to be used as the cerium-containing rare earth solution.
  • cerium salt rare earth carbonate, rare earth hydroxide, rare earth oxalate and so on
  • filtration, pulverization, chemical processing such as mineral acid processing or fluorination, dewatering, drying and so on.
  • cerium salts as a producing method of cerium carbonate, various methods are known besides the above-mentioned producing method of rare earth carbonate (cerium salt).
  • One of those generally used is a method where carbonate groups more than equivalent amount to rare earth ions are charged to obtain fine carbonate powder (Japanese Patent Application Laid-Open No. 53-095900).
  • cerium oxide that is produced by processing at high temperatures the cerium salt obtained according to those methods is used as polishing particles in a cerium oxide based polishing slurry, it is difficult to reduce the scratch on a surface being polished.
  • the invention intends to provide a cerium based polishing slurry that can be used with reduced scratch in a field where a material surface is necessary to be precisely polished, in particular in semiconductors, liquid crystal displays, hard discs and so on, cerium oxide used therein as the polishing particles, a cerium salt that is a raw material used to produce the cerium oxide and a producing method thereof.
  • the inventors after studying hard to reduce the scratch when the cerium based polishing slurry is used, found that the scratch can be reduced when an amount of fine particles of impurities and so on contained in cerium oxide particles used in the cerium based polishing slurry and cerium salt particles that are raw material of the cerium oxide particles is reduced, and came to the invention.
  • the invention relates to (1) through (11) below.
  • a cerium salt where, when 20 g of the cerium salt is dissolved in a mixed liquid of 12.5 g of 6N nitric acid and 12.5 g of a 30% hydrogen peroxide aqueous solution, a concentration of an insoluble component present in the solution is 5 ppm or less by mass ratio.
  • a producing method of a cerium salt where through steps of obtaining one kind or a plurality of kinds of cerium-containing intermediates from a cerium compound a precipitating agent is added to obtain a precipitate of cerium salt, wherein at least one step of separating and removing an insoluble component from the cerium-containing intermediate in a solution state is included.
  • Cerium oxide in which when 20 g of the cerium oxide is dissolved in a mixed liquid of 12.5 g of 6N nitric acid and 12.5 g of a 30% hydrogen peroxide aqueous solution, a concentration of an insoluble component present in the solution is 10 ppm or less by mass ratio.
  • a cerium based polishing slurry in which when 20 g of the cerium based polishing slurry is dissolved in a mixed liquid of 12.5 g of 6N nitric acid and 12.5 g of a 30% hydrogen peroxide aqueous solution, a concentration of an insoluble component present in the solution is 10 ppm or less by mass ratio.
  • the ore containing rare earths containing at least cerium for instance, bastnaesite ore, heavy sand, parankerite and so on can be cited.
  • the rare earth concentrate bastnaesite concentrate, monazite concentrate, Chinese complex concentrate and so on can be cited.
  • the rare earth concentrate is chemically processed to reduce an insoluble component such as impurities and so on, and, as needs arise, further solvent-extracted to reduce rare earths such as neodymium and so on, and thereby a cerium-containing rare earth salt solution that is a second cerium-containing intermediate is obtained.
  • an alkali decomposition reaction a sulfuric acid decomposition reaction, a hydroxide fractional precipitation and so on can be cited.
  • a precipitating agent is added to obtain a precipitate of a cerium salt.
  • the cerium salt as needs arise, is filtered and dried.
  • the precipitating agent for instance, ammonium hydrogen carbonate, aqueous ammonia, sodium hydrogen carbonate, sodium carbonate, oxalic acid and so on can be cited.
  • the cerium salt for instance, rare earth carbonate (cerium carbonate), rare earth hydroxide (cerium hydroxide), rare earth oxalate (cerium oxalate) and so on can be cited.
  • the cerium salt may be a hydrated one.
  • the producing method of a cerium salt according to the invention is characterized in that, in a producing method of a cerium salt where the cerium salt is obtained through a cerium-containing intermediate from a raw material as mentioned above, at least one of a step where an insoluble component such as impurity particles or the like is isolated and removed from a cerium-containing intermediate by means of solid-liquid separation is disposed before a step of adding a precipitating agent to obtain a precipitate of a cerium salt like the (3).
  • the cerium-containing intermediate is in a solution state, for instance, a cerium-containing rare earth salt solution can be cited.
  • a step of isolating and removing the insoluble component from the cerium-containing rare earth salt solution is disposed.
  • a centrifugal separation method for instance, a centrifugal separation method, a filtration method and so on can be cited.
  • a centrifugal separation time is preferably set at 5 min, more preferably at 10 min, further more preferably at 30 min and particularly preferably at 120 min.
  • the centrifugal separation time is less than 5 min, in some cases, the insoluble component is insufficiently separated.
  • the centrifugal separation time can be adjusted. For instance, when the revolution number and the centrifugal separation time are made larger, an amount of removed insoluble component increases.
  • a pore diameter of a filter used is preferably 10 ⁇ m, more preferably 1 ⁇ m, further more preferably 0.5 ⁇ m and particularly preferably 0.05 ⁇ m.
  • a pore diameter of a filter is larger than 10 ⁇ m, since the pore diameter is too large, larger particles such as 0.05 ⁇ m or more tend to be insufficiently captured. For instance, when the pore diameter is made smaller, an amount of removed insoluble component becomes large.
  • a stepwise filtration can be carried out by plurally combining the filters to be used, including a filter having a large pore diameter including those of 10 ⁇ m or more and a filter having a small pore diameter, thereby to make the filter having a larger pore diameter to capture larger particles and thereafter the filter having a smaller pore diameter to capture smaller particles.
  • a filter having a large pore diameter including those of 10 ⁇ m or more
  • a filter having a small pore diameter thereby to make the filter having a larger pore diameter to capture larger particles and thereafter the filter having a smaller pore diameter to capture smaller particles.
  • a material of the filter as far as it is not dissolved owing to the cerium-containing rare earth salt solution being filtered and so on, a metal component thereof is not eluted and the swelling and so on thereof is small, is not particularly limited.
  • Ones made of a fluorinated resin, polypropylene, polyethylene and so on can be cited.
  • the filtration is effective in the solid-liquid separation of the insoluble component in all steps where the cerium-containing intermediate is in a solution state. However, it is particularly effective in the separation and removal of an insoluble component in the cerium-containing rare earth salt solution, which is applied immediately before charging the precipitating agent.
  • the precipitating agent that is added to the cerium-containing intermediate from which the insoluble component has been separated and removed preferably a cerium-containing rare earth salt solution, is effectively used if an insoluble component is previously separated and removed before addition.
  • the precipitating agent for instance, ammonium hydrogen carbonate, aqueous ammonia, sodium hydrogen carbonate, sodium carbonate, oxalic acid and so on can be cited.
  • the precipitating agent is a solid matter, in order to separate and remove the insoluble component, firstly the solid precipitating agent is dissolved in a solvent to prepare a precipitating agent solution. Pure water can be cited as the solvent.
  • a centrifugal separation method for instance, similarly to a case of the insoluble component particles in the cerium-containing intermediate, a centrifugal separation method, a filtration method and so on can be cited. Preferable conditions of the respective separating and removing methods are also the same. Thus obtained precipitating agent in a solution state is used.
  • a concentration of an insoluble component present in the solution (hereinafter also referred to as an insoluble component in the cerium salt) is 5 ppm or less by mass ratio to the cerium salt before dissolving in the mixed liquid.
  • concentration of the insoluble component exceeds 5 ppm, an amount of fine particles of the impurity contained in the cerium salt particles becomes much, and thereby much scratches are generated.
  • the concentration of the insoluble component in the cerium salt, by mass ratio to the cerium salt before dissolution is preferably 1 ppm or less, and more preferably 0.1 ppm or less.
  • the cerium salt according to the invention can be produced for instance as mentioned above.
  • a volume method a weight method can be cited.
  • the cerium salt is dissolved in a mixed liquid of nitric acid and aqueous hydrogen peroxide, followed by filtering with an analyzing filter, and particles of the insoluble component on the filter are observed with a scanning electron microscope to measure a volume thereof.
  • a method of obtaining a volume of a particle a method can be cited where a particle diameter of the particle on the filter is obtained from a Green diameter, a Martin's diameter, a biaxial average diameter, an axial geometric average diameter or the like, and sphere approximated to the diameter is obtained, thereby a volume is obtained.
  • a cerium salt-dissolved aqueous solution of nitric acid and aqueous hydrogen peroxide is filtered by use of an analyzing filter and a weight difference of the filter before and after the filtration is measured. Furthermore, there are methods as well due to an instrumental analysis such as an atomic absorption analysis, an ICP analysis, a fluorescent X-ray analysis or the like.
  • the concentration of the insoluble component for measuring the concentration of the insoluble component, a method where a ratio of a mass of the insoluble component particles to that of the cerium salt particles before dissolution is calculated is adopted. Namely, the respective particles of the insoluble component are approximated to spheres each having a diameter of a square root of a product of a major axis and a minor axis thereof to obtain a total volume thereof, and furthermore, with the insoluble component assumed as silicon dioxide, the specific gravity thereof, that is, 2.6 is multiplied to the total volume, thus a total mass of the insoluble component is obtained.
  • particle diameters of the insoluble component separated and removed from the cerium-containing intermediate in a solution state and the insoluble component separated and removed from the precipitating agent are preferably more than 0.05 ⁇ m.
  • the insoluble component in the obtained cerium salt preferably has a diameter of 0.05 ⁇ m or less.
  • the insoluble component of which particle diameter is 0.05 ⁇ m or less is difficult to affect on the generation of the scratch during polishing.
  • the particle diameter of the insoluble component is obtained by approximating each of the particles to a sphere having a diameter of a square root of a product of a major axis and a minor axis thereof.
  • the insoluble component in the cerium salt is preferably a substance containing silicon. Since a substance containing silicon like silicon dioxide tends to generate the scratch on a surface being polished at the polishing, whether the silicon is less in the content and smaller in the diameter or not can be adopted as an index of a cerium salt from which an excellent polishing slurry is obtained.
  • substance containing silicon include an artificial one such as silicon nitride and silicon carbide, and a natural one such as silicon dioxide, olivine, zircon, carbuncle, topaz and so on.
  • the present invention include a producing method of a cerium salt where after a commercially available cerium salt is dissolved in 6N nitric acid, similarly to the above, an insoluble component insoluble in the solution is separated and removed, thereafter a precipitating agent is added to obtain a precipitate of a purified cerium salt, and as needs arise, followed by filtering and drying, and a producing method of a cerium salt where in the above in particular as the precipitating agent, a precipitating agent solution from which an insoluble component is previously separated and removed similarly to the above is used, and a purified cerium salt obtained therefrom as well.
  • the cerium salt is oxidized to obtain cerium oxide.
  • the cerium salt for instance, one obtained according to the above producing method of a cerium salt can be used.
  • an oxidizing method for instance, heating (calcining) can be cited. In the case of heating, a high temperature process is carried out preferably at 250° C. or more, and more preferably at a temperature in the range of 300 to 1000° C.
  • a concentration of an insoluble component present in the solution is preferably 10 ppm or less by mass ratio to the cerium oxide before dissolving in the mixed liquid.
  • concentration of the insoluble component exceeds 10 ppm, much scratches are generated.
  • the measurement method of the concentration and preferable particle diameter of the insoluble component are the same as the case of the cerium salt.
  • an average value of primary particle diameters of the cerium oxide is preferably 5 nm or more and 300 nm or less.
  • the primary particle means a particle corresponding to a crystallite that is measured and observed with a SEM (scanning electron microscope) and surrounded by a grain boundary.
  • the cerium oxide particles manufactured by the above method are easily flocculated, it is preferable that the cerium oxide particles are mechanically pulverized.
  • pulverizing methods include a dry pulverizing method using a jet mill or the like, and a wet pulverizing method using a planet bead mill or the like.
  • the jet mill is described in, for example, Chemical Industrial Paper Collection (Kagaku Kougyou Ronbunshu), vol. 6, No. 5 (1980), 527-532.
  • a cerium based polishing slurry When a composition containing the cerium oxide particles is dispersed in water, a cerium based polishing slurry can be obtained.
  • a cerium oxide produced according to the above method can be used.
  • a solvent other than water, a dispersing agent, a polymer additive, a pH adjuster and so on are appropriately contained.
  • the cerium based polishing slurry can be used in the CMP (Chemical Mechanical Polishing) polishing.
  • a concentration of the cerium oxide particles in the cerium based polishing slurry is not particularly limited. However, from a viewpoint of easy handling of a dispersion, the concentration is preferably in the range of 0.5 mass percent or more and 20 mass percent or less, more preferably in the range of 1 mass percent or more and 10 mass percent or less and particularly preferably in the range of 1.5 mass percent or more and 5 mass percent or less.
  • the cerium based polishing slurry is prepared for instance as shown below.
  • the dispersing agent being used also in the polishing of semiconductor elements, contents of alkali metals such as sodium ion, potassium ion and so on, halogen and sulfur are preferably suppressed to 10 ppm or less. Accordingly, a polymer dispersing agent containing for instance ammonium acrylate as a copolymer component can be preferably used.
  • An amount of a dispersing agent added is preferably in the range of 0.01 parts by weight or more and 5.0 parts by weight or less to 100 parts by weight of cerium oxide particles from viewpoint of the dispersibility of particles in a slurry-like polishing slurry and inhibition of the particles from precipitating, furthermore, from relationship between the scratches and an amount of the dispersing agent added.
  • a weight average molecular weight of the dispersing agent is preferably in the range of 100 to 50,000, and more preferably in the range of 1,000 to 10,000.
  • the weight average molecular weight is a value measured according to the gel permeation chromatography method and calculated based on reference polystyrene.
  • a method of dispersing cerium oxide particles in water other than a dispersion with a normal agitator, a homogenizer, a ultrasonic disperser, a wet ball mill or the like can be used.
  • a median value of secondary particle diameters of the cerium oxide particles in the cerium based polishing slurry is preferably in the range of 0.01 to 1.0 ⁇ m, more preferably in the range of 0.03 to 0.5 ⁇ m and particularly preferably in the range of 0.05 to 0.3 ⁇ m.
  • the median value of the secondary particle diameters is less than 0.01 ⁇ m, the polishing speed tends to be slower, and when it exceeds 1.0 ⁇ m, the scratches are likely to occur on a surface of a film being polished.
  • the median value of the secondary particle diameters of the cerium oxide particles in the cerium based polishing slurry can be measured according to a photon correlation method with for instance a particle size distribution analyzer (for instance, trade name: Mastersizer Micro Plus, manufactured by Malvern Instruments Ltd.).
  • the pH of the cerium based polishing slurry is preferably 3 or more and 9 or less and more preferably 5 or more and 8 or less.
  • the pH is smaller than 3, a chemical action force tends to become smaller, and the polishing speed tends to decrease.
  • the pH is larger than 9, there is a risk that the chemical action force becomes too strong, and a surface being polished is dissolved to be dish-like (dishing).
  • a concentration of an insoluble component present in the solution is preferably, by mass ratio, 10 ppm or less, more preferably 5 ppm or less, still more preferably 1 ppm or less and particularly preferably 0.1 ppm or less.
  • concentration of the insoluble component exceeds 10 ppm, there is a problem in that much scratches are generated.
  • the measurement method of the concentration and a preferable particle diameter of the insoluble component in the cerium based polishing slurry are the same as the case of the cerium salt except that a dried matter containing cerium oxide particles obtained by drying the cerium based polishing slurry is used to measure.
  • the dried matter containing other components than the cerium oxide particles is used. This is because the cerium oxide particles and other components are difficult to separate after the drying. However, since a content of the other components is very small compared to the content of the cerium oxide particles, there is considered no problem.
  • cerium carbonate hexahydrate
  • the insoluble component assumed as silicon dioxide, the specific gravity thereof, 2.6, and the total volume were multiplied to obtain a total mass of the insoluble component.
  • a ratio of the mass of the insoluble component was calculated and found to be 0.1 ppm.
  • substantially 6 kg of the obtained cerium carbonate was charged in an alumina container, followed by calcining at 800° C. in air for 2 hr, and thereby substantially 3 kg of yellowish-white powder was obtained.
  • the powder was subjected to the phase identification by means of the X-ray diffraction method and confirmed to be cerium oxide.
  • a particle diameter of the calcined powder was in the range of 30 to 100 ⁇ m.
  • 3 kg of the obtained cerium oxide powder was pulverized in dry by use of a jet mill and thereby cerium oxide particles were obtained.
  • cerium oxide particles One thousand grams of the above-prepared cerium oxide particles, 40 g of an ammonium polyacrylate aqueous solution (40 mass percent) and 8960 g of deionized water were blended, followed by applying the ultrasonic dispersion under agitation for 10 min, and thereby a cerium based polishing slurry was prepared. The obtained polishing slurry was filtered with a filter with a pore diameter of 1 ⁇ m.
  • Particles in the polishing slurry were measured of a stock liquid (the polishing slurry after the filtration) by use of a laser diffraction particle size distribution analyzer (trade name: Mastersizer Micro Plus, manufactured by Malvern Instruments Ltd.) under the conditions of the refractive index: 1.9285, light source: He—Ne laser and no absorption and an average value of secondary particle diameters was 200 nm.
  • a laser diffraction particle size distribution analyzer trade name: Mastersizer Micro Plus, manufactured by Malvern Instruments Ltd.
  • the polishing was applied according to a method below. When a surface of a wafer was observed with an optical microscope, there was found no definite scratch.
  • Polishing pad Foamed polyurethane resin (trade name: IC-1000, manufactured by Rodel Inc.)
  • Feed speed of polishing slurry 200 mL/min and
  • Substantially 6 kg of the obtained cerium carbonate was charged into an alumina container, followed by calcining at 800° C. in air for 2 hr, and thereby substantially 3 kg of yellowish white powder was obtained.
  • the powder was subjected to the phase identification by means of the X-ray diffraction method and confirmed to be cerium oxide.
  • a particle diameter of the calcined powder was in the range of 30 to 100 ⁇ m.
  • 3 kg of the obtained cerium oxide powder was pulverized in dry by use of a jet mill and thereby cerium oxide particles were obtained.
  • a high purity cerium salt in which an insoluble component such as impurity particles is reduced can be provided. Furthermore, since a polishing slurry that uses cerium oxide manufactured from the cerium salt can polish without generating a scratch on a film being polished, the polishing slurry is considered to have a great deal of potential in a semiconductor field where precise polishing is demanded.

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US10703947B2 (en) 2010-03-12 2020-07-07 Hitachi Chemical Company, Ltd. Slurry, polishing fluid set, polishing fluid, and substrate polishing method using same
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KR20060061370A (ko) 2006-06-07
US20110006251A1 (en) 2011-01-13
CN1849264A (zh) 2006-10-18
JP6421887B2 (ja) 2018-11-14
TW200517483A (en) 2005-06-01
JP2009274953A (ja) 2009-11-26
JP2015091971A (ja) 2015-05-14
JP2018104711A (ja) 2018-07-05
CN101885959B (zh) 2012-06-13
JP2016216734A (ja) 2016-12-22
TWI286567B (en) 2007-09-11
KR100714814B1 (ko) 2007-05-04
JP2012052121A (ja) 2012-03-15
JP5882659B2 (ja) 2016-03-09
US20130014446A1 (en) 2013-01-17
WO2005026051A1 (ja) 2005-03-24
CN101885959A (zh) 2010-11-17

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