US20050270516A1 - System for magnification and distortion correction during nano-scale manufacturing - Google Patents

System for magnification and distortion correction during nano-scale manufacturing Download PDF

Info

Publication number
US20050270516A1
US20050270516A1 US10/999,898 US99989804A US2005270516A1 US 20050270516 A1 US20050270516 A1 US 20050270516A1 US 99989804 A US99989804 A US 99989804A US 2005270516 A1 US2005270516 A1 US 2005270516A1
Authority
US
United States
Prior art keywords
force
recited
lever arm
axis
linkage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/999,898
Other languages
English (en)
Inventor
Anshuman Cherala
Byung-Jin Choi
Pawan Nimmakayala
Mario Meissl
Sidlgata Sreenivasan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Nanotechnologies Inc
Original Assignee
Molecular Imprints Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Molecular Imprints Inc filed Critical Molecular Imprints Inc
Priority to US10/999,898 priority Critical patent/US20050270516A1/en
Assigned to MOLECULAR IMPRINTS, INC. reassignment MOLECULAR IMPRINTS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHERALA, ANSHUMAN, CHOI, BYUNG-JIN, MEISSL, MARIO, NIMMAKAYALA, PAWAN K., SREENIVASAN, SIDIGATA V.
Assigned to MOLECULAR IMPRINTS, INC. reassignment MOLECULAR IMPRINTS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHERALA, ANSHUMAN, CHOL, BYUNG-JIN, MEISSL, MARIO, NIMMAKAYALA, PAWAN K., SREENIVASAN, SIDLGATA
Priority to EP10182998.4A priority patent/EP2267531B1/de
Priority to AT10160309T priority patent/ATE534937T1/de
Priority to CN2005800229753A priority patent/CN1981236B/zh
Priority to EP05768764A priority patent/EP1754108B1/de
Priority to EP10160309A priority patent/EP2207061B1/de
Priority to US11/142,834 priority patent/US7420654B2/en
Priority to US11/142,808 priority patent/US7298456B2/en
Priority to KR1020067026934A priority patent/KR101113030B1/ko
Priority to US11/142,839 priority patent/US7170589B2/en
Priority to DE602005023153T priority patent/DE602005023153D1/de
Priority to AT05768764T priority patent/ATE479130T1/de
Priority to JP2007515470A priority patent/JP4688872B2/ja
Priority to PCT/US2005/018991 priority patent/WO2005121892A2/en
Priority to TW094118140A priority patent/TWI298816B/zh
Publication of US20050270516A1 publication Critical patent/US20050270516A1/en
Assigned to NAVY, UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE reassignment NAVY, UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE CONFIRMATORY LICENSE (SEE DOCUMENT FOR DETAILS). Assignors: MOLECULAR IMPRINTS, INC.
Abandoned legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G03B27/58—Baseboards, masking frames, or other holders for the sensitive material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details

Definitions

  • the field of invention relates generally to imprint lithography. More particularly, the present invention is directed to reducing pattern distortions during imprint lithography processes.
  • Micro-fabrication involves the fabrication of very small structures, e.g., having features on the order of micro-meters or smaller.
  • One area in which micro-fabrication has had a sizeable impact is in the processing of integrated circuits.
  • micro-fabrication becomes increasingly important.
  • Micro-fabrication provides greater process control while allowing increased reduction of the minimum feature dimension of the structures formed.
  • Other areas of development in which micro-fabrication has been employed include biotechnology, optical technology, mechanical systems and the like.
  • An exemplary micro-fabrication technique is commonly referred to as imprint lithography and is described in detail in numerous publications, such as U.S. published patent applications 2004/0065976, entitled METHOD AND A MOLD TO ARRANGE FEATURES ON A SUBSTRATE TO REPLICATE FEATURES HAVING MINIMAL DIMENSIONAL VARIABILITY; 2004/0065252, entitled METHOD OF FORMING A LAYER ON A SUBSTRATE TO FACILITATE FABRICATION OF METROLOGY STANDARDS; and 2004/0046271, entitled METHOD AND A MOLD TO ARRANGE FEATURES ON A SUBSTRATE TO REPLICATE FEATURES HAVING MINIMAL DIMENSIONAL VARIABILITY, all of which are assigned to the assignee of the present invention.
  • the fundamental imprint lithography technique as shown in each of the aforementioned published patent applications includes formation of a relief pattern in a polymerizable layer and transferring a pattern corresponding to the relief pattern into an underlying substrate.
  • a template is employed spaced-apart from the substrate with a formable liquid present between the template and the substrate.
  • the liquid is solidified to form a solidified layer that has a pattern recorded therein that is conforming to a shape of the surface of the template in contact with the liquid.
  • the substrate and the solidified layer are then subjected to processes to transfer, into the substrate, a relief image that corresponds to the pattern in the solidified layer.
  • One manner in which to locate the polymerizable liquid between the template and the substrate is by depositing a plurality of droplets of the liquid on the substrate. Thereafter, the polymerizable liquid is concurrently contacted by both the template and the substrate to spread the polymerizable liquid over the surface of the substrate. It is desirable to properly align the template with the substrate so that the proper orientation between the substrate and template may be obtained. To that end, both the template and substrate include alignment marks. A concern with these processes involves distortions in the pattern resulting from, inter alia, extenuative variations in the imprinting layer and/or the substrate, as well as misalignment of the template with respect to the substrate.
  • the present invention is directed toward a system to vary dimensions of a substrate, such as a template having a patterned mold.
  • the system includes a substrate chuck adapted to position the substrate in a region; a pliant member; and an actuator sub-assembly elastically coupled to the substrate chuck through the pliant member.
  • the actuator assembly includes a plurality of lever sub-assemblies, one of which includes a body lying in the region and spaced-apart from an opposing body associated with one of the remaining lever sub-assemblies of the plurality of lever sub-assemblies.
  • One of the plurality of lever assemblies is adapted to vary a distance between the body and the opposing body.
  • compressive forces may be applied to the template to remove unwanted magnification or other distortions in the pattern on the mold.
  • the pliant member is configured to attenuate a magnitude of resulting forces sensed by the substrate chuck generated in response to the compressive forces.
  • FIG. 1 is a perspective view of a lithographic system in accordance with the present invention
  • FIG. 2 is a simplified elevation view of a lithographic system shown in FIG. 1 ;
  • FIG. 3 is a simplified elevation view of a mold spaced-apart from the imprinting layer, shown in FIG. 1 , after patterning of the imprinting layer;
  • FIG. 4 is a simplified elevation view of an additional imprinting layer positioned atop of the substrate shown in FIG. 3 after the pattern in the first imprinting layer is transferred therein;
  • FIG. 5 is an exploded view of an imprint head, actuator sub-assembly and template in accordance with the present invention
  • FIG. 6 is a cross-sectional view of a chucking system in accordance with the present invention.
  • FIG. 7 is a bottom-up plan view of a chuck body shown in FIG. 6 ;
  • FIG. 8 is a bottom-up perspective view of an apparatus shown in FIG. 5 used to vary dimensions of a template
  • FIG. 9 is top-down perspective view of the apparatus shown in 8 ;
  • FIG. 10 is detailed side view of a lever sub-assembly shown in FIGS. 8 and 9 in accordance with the present invention.
  • FIG. 11 is an exploded perspective view of the actuator sub-assembly, flexure device, shown in FIG. 5 , with pivots in accordance with the present invention
  • FIG. 12 is a detailed perspective view of one of the pivots shown in FIG. 11 ;
  • FIG. 13 is a top down view of a wafer, shown in FIGS. 2, 3 and 4 upon which imprinting layers are disposed;
  • FIG. 14 is a detailed view of FIG. 13 showing the position of the mold in one of the imprint regions
  • FIG. 15 is a bottom-up plan view of the chuck body shown in FIG. 7 in accordance with an alternate embodiment
  • FIG. 16 is a cross-sectional view of a chuck body shown in FIG. 8 in accordance with a second alternate embodiment
  • FIG. 17 is a flow diagram showing a method of reducing distortions in patterns formed using imprint lithography techniques in accordance with the present invention.
  • FIG. 18 is a flow diagram showing a method of reducing distortions in patterns formed using imprint lithography techniques in accordance with an alternate embodiment of the present invention.
  • FIG. 1 depicts a lithographic system 10 in accordance with one embodiment of the present invention that includes a pair of spaced-apart bridge supports 12 having a bridge 14 and a stage support 16 extending therebetween. Bridge 14 and stage support 16 are spaced-apart. Coupled to bridge 14 is an imprint head 18 , which extends from bridge 14 toward stage support 16 . Disposed upon stage support 16 to face imprint head 18 is a motion stage 20 . Motion stage 20 is configured to move with respect to stage support 16 along X and Y axes, but may move along the Z-axis as well. An exemplary motion stage device is disclosed in U.S.
  • a radiation source 22 is coupled to system 10 to impinge actinic radiation upon motion stage 20 .
  • Operation of system 10 is under control of a processor 31 in data communication with a memory 33 containing computer readable code that defines instructions to regulate the operation of the various components of system 10 .
  • Mold 28 includes a plurality of features defined by a plurality of spaced-apart recessions 28 a and protrusions 28 b.
  • the plurality of features defines an original pattern that forms the basis of a pattern to be transferred into a wafer 30 positioned on motion stage 20 .
  • imprint head 18 is adapted to move along the Z axis and vary a distance “d” between mold 28 and wafer 30 , but may move along the X and Y axes as well. In this manner, the features on mold 28 may be imprinted into a flowable region of wafer 30 , discussed more fully below.
  • Radiation source 22 is located so that mold 28 is positioned between radiation source 22 and wafer 30 .
  • mold 28 is fabricated from material that allows it to be substantially transparent to the radiation produced by radiation source 22 .
  • a flowable region such as an imprinting layer 34 , is formed on a portion of surface 32 that presents a substantially planar profile.
  • the flowable region may be formed using any known technique such as a hot embossing process disclosed in U.S. Pat. No. 5,772,905, which is incorporated by reference in its entirety herein, or a laser assisted direct imprinting (LADI) process of the type described by Chou et al. in Ultrafast and Direct Imprint of Nanostructures in Silicon, Nature, Col. 417, pp. 835-837, June 2002.
  • LADI laser assisted direct imprinting
  • flowable region consists of imprinting layer 34 being deposited as a plurality of spaced-apart discrete droplets 36 of the imprinting material on wafer 30 , discussed more fully below.
  • An exemplary system for depositing droplets 36 is disclosed in U.S. patent application Ser. No. 10/191,749, filed Jul. 9, 2002, entitled “System and Method for Dispensing Liquids”, and which is assigned to the assignee of the present invention and incorporated by reference herein.
  • Imprinting layer 34 is formed from the imprinting material that may be selectively polymerized and cross-linked to record the original pattern therein, defining a recorded pattern.
  • An exemplary composition for the imprinting material is disclosed in U.S. patent application Ser. No. 10/463,396, filed Jun. 16, 2003 and entitled “Method to Reduce Adhesion Between a Conformable Region and a Pattern of a Mold”, which is incorporated by reference in its entirety herein.
  • the pattern recorded in imprinting layer 34 is produced, in part, by interaction with mold 28 , e.g., mechanical contact, electrical contact and the like.
  • the distance “d” is reduced to allow imprinting layer 34 to come into mechanical contact with mold 28 , to spread droplets 36 and form imprinting layer 34 with a contiguous formation of the imprinting material over surface 32 .
  • distance “d” is reduced to allow sub-portions 34 a of imprinting layer 34 to ingress into and fill recessions 28 a.
  • the imprinting material is provided with the requisite properties to completely fill recessions 28 a while covering surface 32 with a contiguous formation of the imprinting material.
  • sub-portions 34 b of imprinting layer 34 in superimposition with protrusions 28 b remain after the desired, usually minimum distance “d”, has been reached, leaving sub-portions 34 a with a thickness t 1 , and sub-portions 34 b with a thickness, t 2 .
  • Thicknesses “t 1 ” and “t 2 ” may be any thickness desired, dependent upon the application.
  • radiation source 22 produces actinic radiation that polymerizes and cross-links the imprinting material, forming cross-linked polymer material.
  • the composition of imprinting layer 34 transforms from the imprinting material to solidified material.
  • the imprinting material is solidified to providing solidified imprinting layer 134 having a side with a shape conforming to a shape of a surface 28 c of mold 28 , shown more clearly in FIG. 3 .
  • distance “d” is increased so that mold 28 and solidified imprinting layer 134 are spaced-apart.
  • additional processing may be employed to complete the patterning of wafer 30 .
  • wafer 30 and solidified imprinting layer 134 may be etched to transfer a pattern of solidified imprinting layer 134 into wafer 30 , providing a patterned surface 32 a, shown in FIG. 4 .
  • the material from which solidified imprinting layer 134 is formed may be varied to define a relative etch rate with respect to wafer 30 , as desired.
  • solidified imprinting layer 134 may be provided with an etch differential with respect to photo-resist material (not shown) selectively disposed thereon.
  • the photo-resist material may be provided to further pattern solidified imprinting layer 134 , using known techniques. Any etch process may be employed, dependent upon the etch rate desired and the underlying constituents that form wafer 30 and solidified imprinting layer 134 . Exemplary etch processes may include plasma etching, reactive ion etching, chemical wet etching and the like.
  • an exemplary radiation source 22 may produce ultraviolet radiation.
  • Other radiation sources may be employed, such as thermal, electromagnetic and the like.
  • the selection of radiation employed to initiate the polymerization of the imprinting material is known to one skilled in the art and typically depends on the specific application which is desired.
  • the plurality of features on mold 28 are shown as recessions 28 a extending along a direction parallel to protrusions 28 b that provide a cross-section of mold 28 with a shape of a battlement.
  • recessions 28 a and protrusions 28 b may correspond to virtually any feature desired, including features to create an integrated circuit and may be as small as a few nanometers.
  • bridge supports 12 , bridge 14 , and/or stage support 16 may be fabricated from one or more of the following materials: iron alloys available under the trade name INVAR®, or name SUPER INVARTM, ceramics, including but not limited to ZERODUR® ceramic and silicon carbide.
  • table 24 may be constructed to isolate the remaining components of system 10 from vibrations in the surrounding environment. An exemplary table 24 is available from Newport Corporation of Irvine, Calif.
  • template 26 upon which mold 28 is present, is coupled to imprint head housing 18 , shown in FIG. 1 , via a chucking system 40 that includes chuck body 42 .
  • Body 42 is coupled to a flexure 41 that is disclosed and claimed in U.S. patent application Ser. No. 10/858,179, filed Jun. 1, 2004, entitled “A Compliant Device for Nano-Scale Manufacturing”, which is assigned to the assignee of the present invention and is incorporated herein by reference.
  • Flexure 41 is coupled to a system 43 that controls movement of template 26 , which is disclosed in U.S. patent application Ser. No. 10/858,100, filed Jun. 1, 2004, entitled “Method and System to Control Movement of a Body for Nano-Scale Manufacturing,” which is assigned to the assignee of the present invention and is incorporated by reference herein.
  • chuck body 42 is adapted to retain template 26 , upon which mold 28 is attached, employing vacuum techniques.
  • chuck body 42 includes first 46 and second 48 opposed sides.
  • a side, or edge, surface 50 extends between first side 46 and second side 48 .
  • First side 46 includes a first recess 52 and a second recess 54 , spaced-apart from first recess 52 , defining first 58 and second 60 spaced-apart support regions.
  • First support region 58 cinctures second support region 60 and the first 52 and second 54 recesses.
  • Second support region 60 cinctures second recess 54 .
  • a portion 62 of chuck body 42 in superimposition with second recess 54 is transparent to radiation having a predetermined wavelength, such as the wavelength of the actinic radiation mentioned above.
  • portion 62 is made from a thin layer of transparent material, such as glass. However, the material from which portion 62 is made may depend upon the wavelength of radiation produced by radiation source 22 , shown in FIG. 2 .
  • Portion 62 extends from second side 48 and terminates proximate to second recess 54 and should define an area at least as large as an area of mold 28 so that mold 28 is in superimposition therewith.
  • Formed in chuck body 42 are one or more throughways, shown as 64 and 66 .
  • One of the throughways, such as throughway 64 places first recess 52 in fluid communication with side surface 50 .
  • the remaining throughway, such as throughway 66 places second recess 54 in fluid communication with side surface 50 .
  • throughway 64 may extend between second side 48 and first recess 52 , as well.
  • throughway 66 may extend between second side 48 and second recess 54 . What is desired is that throughways 64 and 66 facilitate placing recesses 52 and 54 , respectively, in fluid communication with a pressure control system, such a pump system 70 .
  • Pump system 70 may include one or more pumps to control the pressure proximate to recesses 52 and 54 , independently of one another. Specifically, when mounted to chuck body 42 , template 26 rests against first 58 and second 60 support regions, covering first 52 and second 54 recesses. First recess 52 and a portion 44 a of template 26 in superimposition therewith define a first chamber 52 a. Second recess 54 and a portion 44 b of template 26 in superimposition therewith define a second chamber 54 a. Pump system 70 operates to control a pressure in first 52 a and second 54 a chambers.
  • the pressure is established in first chamber 52 a to maintain the position of the template 26 with the chuck body 42 and reduce, if not avoid, separation of template 26 from chuck body 42 under force of gravity.
  • the pressure in the second chamber 54 a may differ from the pressure in the first chamber 52 a to, inter alia, reduce distortions in the template 26 that occur during imprinting, by modulating a shape of template 26 .
  • pump system 70 may apply a positive pressure in chamber 54 a to compensate for any upward force R that occurs as a result on imprinting layer 34 , shown in FIG. 2 , contacting mold 28 .
  • a pressure differential between differing regions of side 46 so that bowing of template 26 and, therefore, mold 28 under force R is attenuated, if not avoided.
  • Coupled to template 26 is a means for varying dimensions of the same in X and Y directions, with the understanding that the Y-direction is into the plane of FIG. 6 .
  • the means for varying dimensions is shown schematically as an actuator sub-assembly 72 , which is coupled to chuck body 42 , shown in exploded view in FIG. 5 .
  • Pump system 70 and actuator sub-assembly 72 are operated under control of processor 31 , shown in FIG. 1 .
  • actuator sub-assembly 72 is configured to subject template 26 to purely compressive forces so that out-of-plane bending forces are substantially minimized, if not avoided entirely. Forces causing bending of template 26 are problematic in that the same results in pattern distortion.
  • actuator sub-assembly 72 includes a plurality of lever sub-assemblies mounted to a frame 76 having a central aperture 77 to direct compressive forces along a neutral axis of template 26 .
  • Each of lever sub-assemblies 74 includes a body 78 coupled to a lever arm 80 and an actuation system 82 .
  • Lever arm 80 is coupled to body 78 through a linkage 84 system.
  • lever arm 80 , body 78 and linkage system 84 are integrally formed from a solid material, e.g., aluminum, stainless steel and the like.
  • a piston 88 of actuation system 82 is coupled to a terminus region 86 of lever arm 80 through a flex joint 90 and may push or pull against terminus region 86 .
  • a second terminus region 87 of lever arm 80 is coupled to linkage system 87 to impart a force thereon.
  • Each of lever sub-assemblies 74 is mounted to frame 76 so that linkage system 84 is positioned on a first side 92 of frame 76 .
  • Actuation system 82 is positioned on a second side 94 of frame 76 , disposed opposite to first side 92 , with lever arm 80 extending therebetween.
  • Each body 78 of lever sub-assemblies 74 extends from linkage system 84 away from lever arm 80 toward aperture 77 and terminates in superimposition therewith.
  • aperture 77 may have any shape desired, typically aperture 77 has a shape complementary to the shape of the template 26 . To that end, and as shown, aperture 77 is square. Further it is desired that each of the plurality of bodies 78 be disposed opposite one of the remaining bodies 78 of the plurality of bodies 78 .
  • each lever sub-assembly 74 may be made smaller such that a greater number of lever sub-assemblies 74 may be employed to provide a finer precision of the distortion control of template 26 . In this manner, an area is defined between the plurality of bodies 78 in which template 26 may be centered.
  • An advantage with the present design is that the entire actuator sub-assembly 72 is positioned to lie on one side of mold 28 so as to be spaced-apart from a plane in which mold surface 28 c, shown in FIG. 3 , lies. This is beneficial in preventing contact between the components of actuator sub-assembly 72 , shown in FIG. 5 , and a wafer 30 , shown in FIG. 3 , during imprint processes.
  • actuator sub-assembly 72 applies a force to terminus region 86 to provide aperture 77 with appropriate dimensions to receive template 26 .
  • aperture 77 may have dimensions that are smaller than the dimensions of template 26 .
  • actuator sub-assembly 72 may operate to pull against terminus region 86 and cause retraction of body 78 away from an opposing body 78 to increase the size of aperture 77 for loading of template 26 .
  • Template 26 is disposed within aperture 77 and held in place via chucking system 40 , shown in FIG. 6 .
  • bodies 78 are arranged so that a contact surface 98 is included in body 78 to contact a side 96 of template 26 .
  • a contact surface 98 is configured to extend parallel to side 96 and make contact therewith.
  • actuation system 82 is coupled to pump system 70 , shown in FIG. 6 , to cause actuation system 82 to impart angular movement of lever arm 80 .
  • piston 88 imparts a force FIN upon one end of lever arm 80 through flexure joint 90 . This causes lever arm 80 to undergo rotational movement that causes body 78 to undergo translational movement toward template 26 , thereby decreasing the area defined by the plurality of bodies 78 .
  • a force F OUT is imparted upon side 96 of template 26 .
  • F OUT By appropriately imparting F OUT from one or more bodies 78 along differing portions of side 96 of template 26 , dimensional variations of template 26 may be achieved.
  • the dimensional variations of template 26 are imparted upon mold 28 , which may be employed to compensate for magnification errors, discussed more fully below.
  • linkage 84 is designed to control the direction of travel of body 78 and lever arm 80 . Additionally the structural connect of sub-assemblies 74 to common frame 76 ensures that high forces are reacted in frame 76 , which as opposed to other components such as template chuck body 42 and, therefore, template 26 .
  • Linkage 84 includes a linkage member 99 and a plurality of flexure joints, shown as 100 , 102 , 104 , 106 , 108 and 110 .
  • Each of flexure joints 100 , 102 , 104 , 106 , 108 and 110 are regions of material of linkage member 99 has substantially reduced material.
  • Flexure joint 100 defines a pivot axis 112 about which lever arm 80 undergoes rotational/angular movement in response to force F IN imparted upon lever arm 80 by piston 88 of actuation system 82 at terminus region 86 .
  • lever arm 80 The rotational/angular movement of lever arm 80 about pivot axis 112 causes body 78 to move in a direction 114 that is transverse, if not orthogonal, to pivot axis 112 . It is highly desired that direction 114 is precisely controlled so that deviation therefrom is minimized. This reduces, if not avoids, out-of-plane bending of template 26 upon being subjected to force F OUT by the plurality of bodies 78 . Force F OUT is directed along terminus region 87 of lever arm 80 onto linkage system 84 .
  • Flexure joints 102 , 104 , and 106 in addition to flexure joint 100 facilitate rotational/angular movement between lever arm 80 and body 78 while ensuring that deviation of body 78 from direction 114 is minimized.
  • each of flexure joints 102 , 104 , and 106 defines an axis of rotation, 116 , 118 , and 120 , respectively, about which rotational/angular movement between lever arm 80 and body 78 may occur.
  • Axes 112 , 116 , 118 , and 120 extend parallel, with axes 112 and 116 being substantially in superimposition with one another and axes 118 and 120 being substantially in superimposition with one another.
  • Axes 112 and 118 lie in a common plane and axes 116 and 120 lie in a common plane.
  • lever arm 80 and linkage 84 may function as an amplifier.
  • the force F OUT applied to linkage system 84 is a function of force F IN and the position of axis 112 between terminus regions 86 and 87 .
  • linkage system 84 includes joints 108 and 110 .
  • Joints 108 and 110 facilitate rotational/angular movement of body 78 with respect to lever member 99 along two transversely extending axes 124 and 126 .
  • body 78 may change position to compensate for obliqueness of side 96 with respect to contact surface 98 .
  • contact surface 98 will maintain contact with side 96 , so as to reduce, if not prevent, localized stresses resulting from, inter alia, having a corner of contact surface 98 contacting side 96 .
  • contact surface 98 may be formed from a compliant material, so that localized stresses on side 96 resulting from non-conformity of contact surface 98 with side 96 is minimized. Further compliance with surface anomalies of side 96 may be achieved by allowing independent control over body 78 and, therefore, contact surface 98 .
  • Actuator sub-assembly 72 facilitates varying the dimension of template 26 in two dimensions. This is particularly useful in overcoming Poisson's effect. Poisson's effect may result in linear coupling of strain in orthogonal directions of template 26 . Specifically, the Poisson ratio is the ratio between the tensile strain caused in the Y and Z directions in template 26 to the compressive strain imparted to template 26 in the X direction. Typical numbers are in the range of 0.1-0.4. Were template 26 formed from fused silica, the ratio is approximately 0.16.
  • a force may be applied to template 26 to vary the dimensions of the same and reduce distortions in the pattern recorded into imprinting layer 34 , shown in FIG. 2 .
  • template dimensions another important consideration when varying template dimensions is to minimize the deleterious effects of the forces employed. For example, when varying template dimensions, forces on the order of hundreds of pounds may be exerted. It is desirable to minimize the amount of these forces felt on other units of system 10 , such as system 43 . In addition, it is desirable that template 26 neither rotate with respect to chuck body 42 about the Z-axis nor move along the X and Y directions with respect to body 42 , such as in the presence of unequal compression forces exerted upon side 96 by bodies 78 .
  • actuator sub-assembly 72 is pivotally/elastically coupled to flexure 41 to move in a plane along X and Y directions in a plane and rotate about the Z direction. This is accomplished by coupling each corner, 72 a, 72 b, 72 c and 72 d, of actuator sub-assembly 72 to a corner, 41 a, 41 b, 41 c and 41 d, of flexure 41 through a pliant member 75 .
  • each pliant member 75 includes opposed termini 79 and 81 with a dual fulcrum lever system 83 extending from terminus 79 , toward terminus 81 , terminating in a fulcrum 85 .
  • Fulcrum 85 is located between opposed termini 79 and 81 .
  • Fulcrum lever system 83 includes a lever 187 , extending from fulcrum 85 , along direction Z toward terminus 79 , terminating in a base 89 .
  • Base 89 is coupled to lever 187 defining a fulcrum 91 thereat.
  • Base 89 extends from fulcrum 91 , transversely to direction Z. Extending from fulcrum 85 is a support 93 that terminates in a base 95 .
  • Support 93 extends from fulcrum 85 toward terminus 79 and is disposed opposite to and spaced apart from lever 187 .
  • Base 95 extends from support 93 away from lever and is positioned in superimposition with, and spaced apart from, base 89 .
  • Base 89 is fixedly attached to actuator sub-assembly 72 , and base 95 is fixedly attached to flexure 41 .
  • actuator sub-assembly 72 With this configuration, relative movement between actuator sub-assembly 72 and flexure 41 is facilitated.
  • Having one pliant member 75 coupling together each pair of corners, i.e., one of the corners of flexure 41 with one of the corners of actuator sub-assembly 72 allows each lever 187 to function as a parallel four-bar linkage in space. This provides the actuator sub-assembly 72 with relative translational movement, with respect to flexure 41 , along the X and Y directions, as well as rotational about the Z direction.
  • fulcrum 85 facilitates relative movement about axis 97
  • fulcrum 91 facilitates relative movement about axis 199
  • relative rotational movement about axis Z is facilitated by lever 187 .
  • the rigidity of lever 187 minimizes, of not prevents, translational movement along the Z direction.
  • actuators sub-assembly 72 is allowed to accommodate loading tolerances and unequal forces between the template and actuator sub-assembly 72 .
  • the actuator sub-assembly 72 may rotate about the Z direction to accommodate for the misalignment.
  • the actuator sub-assembly 72 accommodates for non-equilibrium of the forces applied by moving in the X and/or Y directions and/or rotates about the Z direction.
  • each of the plurality of levers systems 74 operate independently of the remaining lever sub-assemblies 74 so that the sum of the magnification forces applied to template 26 in each direction is zero.
  • F xi +F x(i+1) + . . . F x(i+n) 0 (1)
  • i is an integer number
  • F x is a force in the X direction
  • F y is a force in the Y direction
  • M z is the moment of the forces F x and F y about the Z-axis.
  • the area of template 26 may be increased such that a greater number of lever sub-assemblies 74 may be employed to apply compressive forces to template 26 .
  • the larger number of lever sub-assembly 74 allow a finer precision of the distortion control of template 26 .
  • a subset of, or each of lever sub-assemblies 74 may be constructed to have bodies 78 of smaller dimensions to increase the number thereof coupled to side 96 . In this manner, improved distortion correction may be achieved due to the increased resolution of correction afforded by increasing a number of bodies 78 on side 96 .
  • the area of side 96 may be increased, requiring appropriate scaling of actuator sub-assembly 72 to accommodate a template of increased size 26 .
  • Another advantage of increasing the size of template 26 is that the area of template 26 outside of mold 28 filters, e.g., attenuates, deleterious effects of stress concentrations of bodies 78 on side 96 . The stress concentration creates strain variations at mold 28 , which results in pattern distortions in the pattern on mold 28 .
  • the number of bodies 78 per unit area of edge is proportional to the resolution of distortion correction.
  • decreasing the area of mold 28 with respect to the remaining regions of template 26 reduces the pattern distortions caused by bodies 78 contacting side 96 .
  • distortions in the pattern recorded into imprinting layer 34 may arise from, inter alia, dimensional variations of imprinting layer 34 and wafer 30 . These dimensional variations, which may be due in part to thermal fluctuations, as well as, inaccuracies in previous processing steps that produce what is commonly referred to as magnification/run-out errors.
  • the magnification/run-out errors occur when a region of wafer 30 in which the original pattern is to be recorded exceeds the area of the original pattern. Additionally, magnification/run-out errors may occur when the region of wafer 30 , in which the original pattern is to be recorded, has an area smaller than the original pattern.
  • a step-and-repeat process includes defining a plurality of regions, shown as, a-l, on wafer 30 in which the original pattern on mold 28 will be recorded.
  • the original pattern on mold 28 may be coextensive with the entire surface of mold 28 , or simply located on a sub-portion thereof.
  • the present invention will be discussed with respect to the original pattern being coextensive with the surface of mold 28 that faces wafer 30 .
  • Step-and-repeat imprint lithography processes may be achieved in a variety of manners. For example, the entire surface of wafer 30 may be coated with droplets 36 , shown in FIG.
  • each region a-l would include the requisite volume of imprinting material so that the same would not egress into adjacent regions a-l upon being patterned by mold 28 and subsequently solidified, as discussed above.
  • all the imprinting material required to pattern regions a-l is deposited over the surface of wafer before solidification and imprinting material in any of regions a-l.
  • a sub-portion of regions a-l e.g., one of regions a-l, may be provided with imprinting material that is subsequently patterned and solidified before remaining regions of a-l are provided with any imprinting material.
  • the entire surface of wafer may be provided with imprinting material deposited employing spin-coating techniques followed by sequentially patterning and solidifying imprinting material in each of regions a-l.
  • Proper execution of a step-and-repeat process may include proper alignment of mold 28 with each of regions a-l.
  • mold 28 includes alignment marks 114 a, shown as a “+” sign.
  • One or more of regions a-l includes fiducial marks 110 a.
  • machine vision devices (not shown) may be employed to sense the relative alignment between alignment marks 114 a and fiducial marks 110 a. In the present example, proper alignment is indicated upon alignment marks 114 a being in superimposition with fiducial marks 110 a. With the introduction of magnification/run-out errors, proper alignment becomes very difficult.
  • magnification/run-out errors are reduced, if not avoided, by creating relative dimensional variations between mold 28 and wafer 30 .
  • the relative dimensions of mold 28 and wafer 30 are established so that at least one of regions a-l defines an area that is slightly less than an area of the original pattern on mold 28 .
  • the final compensation for magnification/run-out errors is achieved by subjecting template 26 , shown in FIG. 8 , to mechanical compression forces using actuator sub-assembly 72 , which are in turn transferred to mold 28 shown by arrows F 1 and F 2 , orientated transversely to one another, shown in FIG. 14 .
  • the area of the original pattern is made coextensive with the area of the region a-l in superimposition therewith.
  • patterns defined by mold 28 may be generated to be slightly larger than nominal, e.g., slightly larger than desired. In this manner, it could be said that the original pattern defined by mold 28 has a fixed magnification associated therewith, compared to the nominal dimensions of the pattern desired to be recorded in one of regions a-l.
  • Actuator sub-assembly 72 is then employed to compress template 26 to provide the original pattern with a zero magnification. It is possible, however, to create thermal changes to vary the dimension of wafer 30 so that one of regions a-l has dimensions that are slightly less than the dimensions of mold 86 .
  • support regions 58 and 60 have surface regions 58 a and 60 a, respectively, formed thereon from a material adapted to conform to a profile of said template 26 and resistant to deformation along the X and Y axes. In this manner, surface regions 58 a and 60 a resist relative movement of template 26 with respect to chuck body 42 in the X and Y directions.
  • providing a chuck body 142 with walls/baffles 142 a, 142 b, 142 c and 142 d facilitates providing sub-regions 152 a, 152 b, 152 c and 152 d with differing pressure levels, concurrently.
  • the amount of force exerted on template 26 when being pulled-apart from imprinting layer 34 may vary across the surface of template 26 . This allows cantilevering, or peeling-off of template 26 from imprinting layer 34 that reduces distortions or defects from being formed in imprinting layer 34 during separation of mold 28 therefrom.
  • sub-chamber 152 b may have a pressure established therein that is greater than the pressure associated with the remaining sub-chambers 152 a, 152 c and 152 d.
  • the pulling force of the portion of template 26 in superimposition with sub-chambers 152 a, 152 c and 152 d is subjected to is greater than the pulling force to which the portion of template 26 in superimposition with sub-chamber 152 b is subjected.
  • the rate that “d” increases for the portion of template 26 in superimposition with sub-chambers 152 a, 152 c and 152 d is accelerated compared to the rate at which “d” increases for the portion of template 26 in superimposition with sub-chamber 152 b, providing the aforementioned cantilevering effect.
  • chuck body 242 may include a plurality of pins 242 a projecting from a nadir surface 252 a of out recess 252 .
  • Pins 242 a provide mechanical support for the template (not shown) retained on chuck body 242 via vacuum and resting against surfaces 258 a and 260 a of support regions 258 and 260 , respectively.
  • Surface regions 258 a and 260 a provide a fluid-tight seal with the template (not shown).
  • surfaces 258 a and 260 a are polished to be optically flat and pins 242 a extend from recess 252 terminating in a common plane with surfaces 258 a and 260 a.
  • Pins 242 a Mechanical support of the template (not shown) in the Z direction is provided by support regions 258 and 260 and pins 242 a, with pins 242 a typically being rigid posts having a circular or square cross-section. Pins 242 a are arranged in a patter so that the mold (not shown) on template (not shown) is substantially flat when a nominal vacuum pressure is applied.
  • an accurate measurement of wafer 30 in an X-Y plane is undertaken at step 200 .
  • This may be achieved by sensing gross alignment fiducials 110 b present on wafer 30 using machine vision devices (not shown) and known signal processing techniques.
  • the area of one of regions a-l is established to be slightly less than an area of the original pattern on mold 28 . This may be achieved by fabricating mold 28 to have a pattern thereon that is slightly larger than the area of one of regions a-l, and/or expanding the mold by varying the temperature thereof.
  • the temperature of wafer 30 may be varied, i.e., raised or lowered, so that the area of one of regions a-l is slightly less than an area of the original pattern on mold 28 .
  • the temperature variations may be achieved using a temperature controlled chuck or pedestal (not shown) against which wafer 30 rests.
  • the area of each of regions a-l can be determined by measurement of a change in distance between two collinear gross alignment fiducials 110 b.
  • a change in the distance between two gross alignment fiducials lob collinear along one of the X or Y axes is determined. Thereafter, this change in distance is divided by a number of adjacent regions a-l on the wafer 30 along the X-axis. This provides the dimensional change of the areas of regions a-l attributable to dimensional changes in wafer 30 along the X-axis. If necessary the same measurement may be made to determine the change in area of regions a-l due to dimensional changes of wafer 30 along the Y-axis. However, it may also be assumed that the dimensional changes in wafer 30 may be uniform in the two orthogonal axes, X and Y.
  • compressive forces F 1-10 are applied to mold 28 to establish the area of the original pattern to be coextensive with the area of one of the regions a-l in superimposition with the pattern and proper alignment between the pattern on mold 28 and one of the regions a-l. This may be achieved in real-time employing machine vision devices (not shown) and known signal processing techniques, to determine when two or more of alignment marks 114 a are aligned with two or more of fiducial marks 110 a.
  • the original pattern is recorded in the region a-l that is in superimposition with mold 28 , forming the recorded pattern.
  • each lever sub-assembly 74 of actuator sub-assembly 72 may operate independently. This affords application of differing force combinations F 1-10 to mold 28 to compensate for magnification distortion, as well as distortions that may be present in pattern on mold, e.g., orthogonally distortions, such as skew distortions and keystone distortions.
  • the dimensional variation in mold 28 may be undertaken after mold 28 contacts imprinting layer 124 , shown in FIG. 6 . However, this is not necessary.
  • the alignment of mold 28 with regions a-l in superimposition therewith may occur with mold 28 being spaced-apart from imprinting layer 124 .
  • the magnification/run-out errors were constant over the entire wafer 30 , then the magnitude of forces F 1-10 could be maintained for each region a-l in which the original pattern is recorded.
  • steps 202 and 204 shown in FIG. 17 , would then be undertaken for each region a-l in which the original pattern is recorded.
  • there are limits to the relative dimensional changes that may occur between wafer 30 and mold 28 for example, the area of the regions a-l should be of appropriate dimensions to enable pattern on mold 28 to define an area coextensive therewith when mold 28 is subject to compression forces F 1-10 without compromising the structural integrity of mold 28 .
  • step 300 accurate measurement of wafer 30 in an X-Y plane is undertaken at step 300 .
  • step 302 it is determined whether the original pattern on mold 28 has any distortions, e.g., skew distortions, keystone distortions and the like. If there are original pattern distortions, a force differential is established to create the requisite differences in magnitude among forces F 1-10 to remove the original pattern distortions, defining a force differential, at step 303 . In this manner, skew distortions, keystone distortions and the like may be attenuated if not abrogated entirely to provide mold 28 with the original pattern desired.
  • distortions e.g., skew distortions, keystone distortions and the like.
  • step 304 it is determined whether the area of one of regions a-l in superimposition with mold 28 is larger than the area of the pattern on mold 28 , at step 304 . If this is the case, the process proceeds to step 306 , otherwise the process proceeds to step 308 .
  • step 308 mold 28 is placed in contact with the region a-l in superimposition therewith, and the requisite magnitude of compressive forces F 1-10 is determined to apply to mold 28 to ensure that the area of pattern is coextensive with the area of this region a-l, with the compressive forces including the force differential.
  • compressive forces F 1-10 are applied to mold 28 and the pattern is recorded in wafer 30 .
  • step 311 the pattern is recorded on wafer. Thereafter, mold 28 is spaced-apart from the region a-l in superimposition with mold 28 and the process proceeds to step 312 where it is determined whether there remain any regions a-l on wafer 30 in which to record the original pattern. If there are, the process proceeds to step 314 wherein mold is placed in superimposition with the next region and the process proceeds to step 304 . Otherwise, the process ends at step 316 .
  • step 304 the process proceeds to step 306 wherein the temperature of mold 28 and/or wafer 30 is varied to cause expansion of the same.
  • mold 28 is heated at step 306 so that the pattern is slightly larger than the area of region a-l in superimposition therewith. Then the process continues at step 310 .

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Micromachines (AREA)
  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)
  • Manipulator (AREA)
  • Optical Head (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Bending Of Plates, Rods, And Pipes (AREA)
  • Electrodes Of Semiconductors (AREA)
US10/999,898 2004-06-03 2004-11-30 System for magnification and distortion correction during nano-scale manufacturing Abandoned US20050270516A1 (en)

Priority Applications (15)

Application Number Priority Date Filing Date Title
US10/999,898 US20050270516A1 (en) 2004-06-03 2004-11-30 System for magnification and distortion correction during nano-scale manufacturing
JP2007515470A JP4688872B2 (ja) 2004-06-03 2005-06-01 ナノスケール加工中に基板の寸法を変更する装置、システムおよび方法
PCT/US2005/018991 WO2005121892A2 (en) 2004-06-03 2005-06-01 Apparatus, system and method to vary dimensions of a substrate during nano-scale manufacturing
US11/142,808 US7298456B2 (en) 2004-06-03 2005-06-01 System for varying dimensions of a substrate during nanoscale manufacturing
DE602005023153T DE602005023153D1 (de) 2004-06-03 2005-06-01 Gerät, system und verfahren zur änderung von substratabmessungen bei nanoskaligen herstellungsverfahren
CN2005800229753A CN1981236B (zh) 2004-06-03 2005-06-01 在纳米级制造中改变衬底的尺寸的装置、系统和方法
EP05768764A EP1754108B1 (de) 2004-06-03 2005-06-01 Gerät, system und verfahren zur änderung von substratabmessungen bei nanoskaligen herstellungsverfahren
EP10160309A EP2207061B1 (de) 2004-06-03 2005-06-01 System zur Änderung der Abmessungen einer Vorlage
US11/142,834 US7420654B2 (en) 2004-06-03 2005-06-01 Method of varying dimensions of a substrate during nano-scale manufacturing
EP10182998.4A EP2267531B1 (de) 2004-06-03 2005-06-01 System zur Änderung der Abmessungen einer Vorlage
KR1020067026934A KR101113030B1 (ko) 2004-06-03 2005-06-01 나노 스케일의 제조 과정 중에 기판의 치수를 변화시키기위한 장치, 시스템 및 방법
US11/142,839 US7170589B2 (en) 2004-06-03 2005-06-01 Apparatus to vary dimensions of a substrate during nano-scale manufacturing
AT10160309T ATE534937T1 (de) 2004-06-03 2005-06-01 System zur änderung der abmessungen einer vorlage
AT05768764T ATE479130T1 (de) 2004-06-03 2005-06-01 Gerät, system und verfahren zur änderung von substratabmessungen bei nanoskaligen herstellungsverfahren
TW094118140A TWI298816B (en) 2004-06-03 2005-06-02 Apparatus, system and method to vary dimensions of a substrate during nano-scale manufacturing

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US57687904P 2004-06-03 2004-06-03
US10/999,898 US20050270516A1 (en) 2004-06-03 2004-11-30 System for magnification and distortion correction during nano-scale manufacturing

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US11/142,834 Continuation-In-Part US7420654B2 (en) 2004-06-03 2005-06-01 Method of varying dimensions of a substrate during nano-scale manufacturing
US11/142,839 Continuation-In-Part US7170589B2 (en) 2004-06-03 2005-06-01 Apparatus to vary dimensions of a substrate during nano-scale manufacturing

Publications (1)

Publication Number Publication Date
US20050270516A1 true US20050270516A1 (en) 2005-12-08

Family

ID=35448519

Family Applications (4)

Application Number Title Priority Date Filing Date
US10/999,898 Abandoned US20050270516A1 (en) 2004-06-03 2004-11-30 System for magnification and distortion correction during nano-scale manufacturing
US11/142,839 Active US7170589B2 (en) 2004-06-03 2005-06-01 Apparatus to vary dimensions of a substrate during nano-scale manufacturing
US11/142,808 Active US7298456B2 (en) 2004-06-03 2005-06-01 System for varying dimensions of a substrate during nanoscale manufacturing
US11/142,834 Active 2026-01-30 US7420654B2 (en) 2004-06-03 2005-06-01 Method of varying dimensions of a substrate during nano-scale manufacturing

Family Applications After (3)

Application Number Title Priority Date Filing Date
US11/142,839 Active US7170589B2 (en) 2004-06-03 2005-06-01 Apparatus to vary dimensions of a substrate during nano-scale manufacturing
US11/142,808 Active US7298456B2 (en) 2004-06-03 2005-06-01 System for varying dimensions of a substrate during nanoscale manufacturing
US11/142,834 Active 2026-01-30 US7420654B2 (en) 2004-06-03 2005-06-01 Method of varying dimensions of a substrate during nano-scale manufacturing

Country Status (9)

Country Link
US (4) US20050270516A1 (de)
EP (3) EP2267531B1 (de)
JP (1) JP4688872B2 (de)
KR (1) KR101113030B1 (de)
CN (1) CN1981236B (de)
AT (2) ATE479130T1 (de)
DE (1) DE602005023153D1 (de)
TW (1) TWI298816B (de)
WO (1) WO2005121892A2 (de)

Cited By (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007132320A2 (en) 2006-05-11 2007-11-22 Molecular Imprints, Inc. Template having a varying thickness
US7360851B1 (en) 2006-02-15 2008-04-22 Kla-Tencor Technologies Corporation Automated pattern recognition of imprint technology
US20080174046A1 (en) * 2002-07-11 2008-07-24 Molecular Imprints Inc. Capillary Imprinting Technique
US20080303187A1 (en) * 2006-12-29 2008-12-11 Molecular Imprints, Inc. Imprint Fluid Control
US20090026657A1 (en) * 2007-07-20 2009-01-29 Molecular Imprints, Inc. Alignment System and Method for a Substrate in a Nano-Imprint Process
US20090147237A1 (en) * 2007-12-05 2009-06-11 Molecular Imprints, Inc. Spatial Phase Feature Location
US20090200710A1 (en) * 2008-02-08 2009-08-13 Molecular Imprints, Inc. Extrusion reduction in imprint lithography
US7691313B2 (en) 2002-11-13 2010-04-06 Molecular Imprints, Inc. Method for expelling gas positioned between a substrate and a mold
US20100102487A1 (en) * 2008-10-28 2010-04-29 Molecular Imprints, Inc. Optical System for Use in Stage Control
US20100109202A1 (en) * 2008-11-04 2010-05-06 Molecular Imprints, Inc. Substrate Alignment
US20100110434A1 (en) * 2008-11-04 2010-05-06 Molecular Imprints, Inc. Alignment for Edge Field Nano-Imprinting
US20100167189A1 (en) * 2008-12-31 2010-07-01 Asml Holding N.V. Optically Compensated Unidirectional Reticle Bender
US7785096B2 (en) 2004-11-30 2010-08-31 Molecular Imprints, Inc. Enhanced multi channel alignment
US20110001254A1 (en) * 2009-07-06 2011-01-06 Asml Netherlands B.V. Imprint Lithography Apparatus and Method
US7880872B2 (en) 2004-11-30 2011-02-01 Molecular Imprints, Inc. Interferometric analysis method for the manufacture of nano-scale devices
US20110084417A1 (en) * 2009-10-08 2011-04-14 Molecular Imprints, Inc. Large area linear array nanoimprinting
US8012395B2 (en) 2006-04-18 2011-09-06 Molecular Imprints, Inc. Template having alignment marks formed of contrast material
US8211214B2 (en) 2003-10-02 2012-07-03 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US20120193832A1 (en) * 2011-02-02 2012-08-02 Canon Kabushiki Kaisha Holding apparatus, imprint apparatus and article manufacturing method using same
US20130300031A1 (en) * 2012-05-08 2013-11-14 Canon Kabushiki Kaisha Imprint apparatus and method of manufacturing article
US20140117574A1 (en) * 2008-10-24 2014-05-01 Molecular Imprints, Inc. Strain and Kinetics Control During Separation Phase of Imprint Process
US20140327188A1 (en) * 2012-08-09 2014-11-06 Dai Nippon Printing Co., Ltd. Method for producing fine convex pattern structure and fine convex pattern production system
US9201298B2 (en) 2011-10-14 2015-12-01 Canon Kabushiki Kaisha Imprint method, imprint apparatus, and article manufacturing method
US9541847B2 (en) 2011-07-21 2017-01-10 Kabushiki Kaisha Toshiba Imprint method and imprint system
US9594301B2 (en) 2011-10-14 2017-03-14 Canon Kabushiki Kaisha Imprint apparatus and article manufacturing method using same
US20170307367A1 (en) * 2016-04-25 2017-10-26 Canon Kabushiki Kaisha Measurement device, imprint apparatus, method for manufacturing product, light amount determination method, and light amount adjustment method
WO2018187472A1 (en) * 2017-04-04 2018-10-11 Allevi, Inc. Multi-headed auto-calibrating bioprinter with heads that heat, cool, and crosslink
US10300640B2 (en) * 2014-01-24 2019-05-28 Canon Kabushiki Kaisha Imprint apparatus and method of manufacturing article
US11121322B2 (en) 2015-10-12 2021-09-14 Universal Display Corporation Apparatus and method to deliver organic material via organic vapor-jet printing (OVJP)
US11220737B2 (en) 2014-06-25 2022-01-11 Universal Display Corporation Systems and methods of modulating flow during vapor jet deposition of organic materials
US11267012B2 (en) * 2014-06-25 2022-03-08 Universal Display Corporation Spatial control of vapor condensation using convection
US11422461B2 (en) * 2019-04-16 2022-08-23 Canon Kabushiki Kaisha Imprint apparatus and method of manufacturing article
US11591686B2 (en) 2014-06-25 2023-02-28 Universal Display Corporation Methods of modulating flow during vapor jet deposition of organic materials
US11779472B2 (en) 2014-03-25 2023-10-10 3D Systems, Inc. Methods, devices, and systems for the fabrication of materials and tissues utilizing electromagnetic radiation
US11994797B2 (en) 2020-10-28 2024-05-28 Canon Kabushiki Kaisha System and method for shaping a film with a scaled calibration measurement parameter

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6696220B2 (en) * 2000-10-12 2004-02-24 Board Of Regents, The University Of Texas System Template for room temperature, low pressure micro-and nano-imprint lithography
US7077992B2 (en) * 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US20050270516A1 (en) * 2004-06-03 2005-12-08 Molecular Imprints, Inc. System for magnification and distortion correction during nano-scale manufacturing
JP4574240B2 (ja) * 2004-06-11 2010-11-04 キヤノン株式会社 加工装置、加工方法、デバイス製造方法
US20060062922A1 (en) 2004-09-23 2006-03-23 Molecular Imprints, Inc. Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor
JP2006261605A (ja) * 2005-03-18 2006-09-28 Canon Inc 露光装置及び露光方法
US7442029B2 (en) 2005-05-16 2008-10-28 Asml Netherlands B.V. Imprint lithography
CN101208774B (zh) * 2005-05-27 2011-07-06 普林斯顿大学 在引导条件下通过液化的纳米结构自修复
US7927089B2 (en) * 2005-06-08 2011-04-19 Canon Kabushiki Kaisha Mold, apparatus including mold, pattern transfer apparatus, and pattern forming method
US8582089B2 (en) * 2006-06-09 2013-11-12 Chemimage Corporation System and method for combined raman, SWIR and LIBS detection
US7906058B2 (en) 2005-12-01 2011-03-15 Molecular Imprints, Inc. Bifurcated contact printing technique
CN101535021A (zh) 2005-12-08 2009-09-16 分子制模股份有限公司 用于衬底双面图案形成的方法和系统
US7670530B2 (en) 2006-01-20 2010-03-02 Molecular Imprints, Inc. Patterning substrates employing multiple chucks
US20070200276A1 (en) * 2006-02-24 2007-08-30 Micron Technology, Inc. Method for rapid printing of near-field and imprint lithographic features
US8215946B2 (en) 2006-05-18 2012-07-10 Molecular Imprints, Inc. Imprint lithography system and method
US20110237446A1 (en) * 2006-06-09 2011-09-29 Chemlmage Corporation Detection of Pathogenic Microorganisms Using Fused Raman, SWIR and LIBS Sensor Data
US7946837B2 (en) 2006-10-06 2011-05-24 Asml Netherlands B.V. Imprint lithography
KR100843342B1 (ko) * 2007-02-12 2008-07-03 삼성전자주식회사 Ｕｖ 나노 임프린트 리소그래피 수행 공정 및 장치
US20090014917A1 (en) * 2007-07-10 2009-01-15 Molecular Imprints, Inc. Drop Pattern Generation for Imprint Lithography
NL1036034A1 (nl) 2007-10-11 2009-04-15 Asml Netherlands Bv Imprint lithography.
US8119052B2 (en) * 2007-11-02 2012-02-21 Molecular Imprints, Inc. Drop pattern generation for imprint lithography
JP4909913B2 (ja) * 2008-01-10 2012-04-04 株式会社東芝 インプリントマスクの製造方法および半導体装置の製造方法
US20090212012A1 (en) 2008-02-27 2009-08-27 Molecular Imprints, Inc. Critical dimension control during template formation
WO2009110963A2 (en) * 2008-02-29 2009-09-11 Corning Incorporated Kinematic optical mount
US8795572B2 (en) 2008-04-17 2014-08-05 Massachusetts Institute Of Technology Symmetric thermocentric flexure with minimal yaw error motion
JP5123059B2 (ja) * 2008-06-09 2013-01-16 株式会社東芝 半導体装置の製造方法
US8945454B2 (en) * 2008-08-22 2015-02-03 Konica Minolta Opto, Inc. Substrate manufacturing method, substrate manufactured by the substrate manufacturing method and magnetic recording medium using the substrate
US8586126B2 (en) 2008-10-21 2013-11-19 Molecular Imprints, Inc. Robust optimization to generate drop patterns in imprint lithography which are tolerant of variations in drop volume and drop placement
US8512797B2 (en) * 2008-10-21 2013-08-20 Molecular Imprints, Inc. Drop pattern generation with edge weighting
US20100112220A1 (en) * 2008-11-03 2010-05-06 Molecular Imprints, Inc. Dispense system set-up and characterization
WO2010111307A1 (en) * 2009-03-23 2010-09-30 Intevac, Inc. A process for optimization of island to trench ratio in patterned media
DE102010007970A1 (de) 2010-02-15 2011-08-18 Suss MicroTec Lithography GmbH, 85748 Verfahren und Vorrichtung zum aktiven Keilfehlerausgleich zwischen zwei im wesentlichen zueinander parallel positionierbaren Gegenständen
JP5637785B2 (ja) * 2010-09-06 2014-12-10 キヤノン株式会社 原版、及びそれを用いた物品の製造方法
JP5822597B2 (ja) * 2010-10-01 2015-11-24 キヤノン株式会社 インプリント装置、及びそれを用いた物品の製造方法
WO2012172755A1 (ja) * 2011-06-16 2012-12-20 パナソニック株式会社 シートおよびモールドならびにその製造方法
JP5694889B2 (ja) * 2011-09-29 2015-04-01 富士フイルム株式会社 ナノインプリント方法およびそれに用いられるナノインプリント装置並びにパターン化基板の製造方法
JP5865528B2 (ja) * 2011-10-14 2016-02-17 キヤノン株式会社 インプリント装置、インプリント方法、及びデバイス製造方法
JP2013098291A (ja) * 2011-10-31 2013-05-20 Canon Inc インプリント装置およびインプリント方法、それを用いた物品の製造方法
JP6021606B2 (ja) * 2011-11-28 2016-11-09 キヤノン株式会社 インプリント装置、それを用いた物品の製造方法、およびインプリント方法
JP5960198B2 (ja) 2013-07-02 2016-08-02 キヤノン株式会社 パターン形成方法、リソグラフィ装置、リソグラフィシステムおよび物品製造方法
JP6497839B2 (ja) 2013-11-07 2019-04-10 キヤノン株式会社 インプリント装置及び物品の製造方法
EP3066524A1 (de) * 2013-11-08 2016-09-14 Canon Nanotechnologies, Inc. Kontaktarmes imprint-lithografievorlagenaufspannsystem für verbesserte überlagerungskorrektur
JP6294686B2 (ja) * 2014-02-04 2018-03-14 キヤノン株式会社 インプリント装置、インプリント方法及び物品の製造方法
JP6317620B2 (ja) * 2014-05-02 2018-04-25 キヤノン株式会社 インプリント方法、インプリント装置及び物品の製造方法
JP6385177B2 (ja) * 2014-07-16 2018-09-05 キヤノン株式会社 モールド、インプリント装置および物品製造方法
US10331027B2 (en) 2014-09-12 2019-06-25 Canon Kabushiki Kaisha Imprint apparatus, imprint system, and method of manufacturing article
CN104476763B (zh) * 2014-11-10 2017-07-07 镇江中化聚氨酯工业设备有限公司 聚氨酯保温节能板材的压槽设备
JP6437387B2 (ja) * 2015-05-25 2018-12-12 東芝メモリ株式会社 基板平坦化方法
JP2017152673A (ja) 2015-11-05 2017-08-31 ボード・オブ・リージェンツ， ジ・ユニバーシティー・オブ・テキサス・システム ジェット・アンド・フラッシュ・インプリントリソグラフィにおけるマルチフィールドオーバーレイ制御
JP6677495B2 (ja) * 2015-12-04 2020-04-08 キヤノン株式会社 インプリント装置、及び物品の製造方法
CN105607415B (zh) * 2016-02-25 2019-10-25 中国科学技术大学 一种纳米压印头及具有该纳米压印头的压印设备
US9993962B2 (en) 2016-05-23 2018-06-12 Canon Kabushiki Kaisha Method of imprinting to correct for a distortion within an imprint system
JP6882027B2 (ja) * 2017-03-16 2021-06-02 キヤノン株式会社 インプリント装置、および物品製造方法
US10534259B2 (en) * 2017-03-28 2020-01-14 Canon Kabushiki Kaisha Method and system for imprint force control
US10998190B2 (en) 2017-04-17 2021-05-04 Canon Kabushiki Kaisha Imprint apparatus and method of manufacturing article
US11175598B2 (en) 2017-06-30 2021-11-16 Canon Kabushiki Kaisha Imprint apparatus and method of manufacturing article
JP6865650B2 (ja) 2017-07-27 2021-04-28 キヤノン株式会社 インプリント装置、および物品製造方法
US10996560B2 (en) 2017-07-31 2021-05-04 Canon Kabushiki Kaisha Real-time correction of template deformation in nanoimprint lithography
US10866510B2 (en) 2017-07-31 2020-12-15 Canon Kabushiki Kaisha Overlay improvement in nanoimprint lithography
US10409178B2 (en) 2017-12-18 2019-09-10 Canon Kabushiki Kaisha Alignment control in nanoimprint lithography based on real-time system identification
US10996561B2 (en) 2017-12-26 2021-05-04 Canon Kabushiki Kaisha Nanoimprint lithography with a six degrees-of-freedom imprint head module
JP7222623B2 (ja) 2018-07-23 2023-02-15 キヤノン株式会社 パターン形成方法および物品製造方法
JP7204457B2 (ja) 2018-12-06 2023-01-16 キヤノン株式会社 インプリント装置、インプリント方法及び物品の製造方法
JP7254564B2 (ja) 2019-03-05 2023-04-10 キヤノン株式会社 インプリント装置、インプリント方法、および物品の製造方法
NL2023051B1 (en) * 2019-05-02 2020-11-23 Suss Microtec Lithography Gmbh Framework for a replication device, replication device as well as method for producing nanostructured and/or microstructured components by means of a 5 replication device
JP7256684B2 (ja) 2019-05-14 2023-04-12 キヤノン株式会社 インプリント装置、インプリント方法および物品製造方法
KR102168476B1 (ko) * 2019-08-27 2020-10-21 한국기계연구원 투명스탬프 제조장치 및 제조방법, 상기 제조장치로 만들어진 투명스탬프, 상기 투명스탬프를 이용한 임프린트 리소그래피 방법
US11815811B2 (en) 2021-03-23 2023-11-14 Canon Kabushiki Kaisha Magnification ramp scheme to mitigate template slippage
US20240329520A1 (en) * 2021-07-21 2024-10-03 Koninklijke Philips N.V. Imprinting apparatus
EP4123375A1 (de) * 2021-07-21 2023-01-25 Koninklijke Philips N.V. Prägevorrichtung
US12040584B2 (en) * 2021-12-08 2024-07-16 Eagle Technology, Llc Optical system for use with a vacuum chamber and associated method

Citations (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6343A (en) * 1849-04-17 Moetising-machine
US7799A (en) * 1850-11-26 Improved method of securing rails of railroads
US8334A (en) * 1851-09-02 Drying and oxidizing colored goods
US9673A (en) * 1853-04-19 Machine for rolling- bar-iron
US13118A (en) * 1855-06-19 Burgh
US18190A (en) * 1857-09-15 Improvement in making paper-pulp from ivory
US21254A (en) * 1858-08-24 Improvement in machines for cutting up cornstalks in the field
US21866A (en) * 1858-10-26 Improvement in tools for manufacturing wire riddles
US22888A (en) * 1859-02-08 Process op manueacttrkeng catistic alkalis
US33515A (en) * 1861-10-22 Improvement in carriage-curtain fastenings
US34329A (en) * 1862-02-04 Improved iron ponton
US36201A (en) * 1862-08-19 Napoleon aubin
US42027A (en) * 1864-03-22 Improvement in huller and screen
US46288A (en) * 1865-02-07 Improvement in clasps for wearing apparel
US53146A (en) * 1866-03-13 1866-03-13 Improvement in time-pieces
US80471A (en) * 1868-07-28 Improved lubricating compound
US80472A (en) * 1868-07-28 Thomas gibson
US86793A (en) * 1869-02-09 Improvement in the manufacture of gas from petroleum
US90611A (en) * 1869-05-25 Improvement in fence-post socket
US92261A (en) * 1869-07-06 Improvement in countersink
US110856A (en) * 1871-01-10 Improvement in devices for securing the tines of hay-tedders
US112861A (en) * 1871-03-21 Improvement in gauges for saw-tables
US118809A (en) * 1871-09-12 Improvement in blacking apparatus and bootjack combined
US124566A (en) * 1872-03-12 Improvement in combined tools
US132482A (en) * 1872-10-22 Improvement in buckles
US137734A (en) * 1873-04-08 Improvement in fertilizing-distributers
US146792A (en) * 1874-01-27 Improvement in rotary printing presses for cards and tickets
US150398A (en) * 1874-05-05 Improvement in baby-walkers
US156108A (en) * 1874-10-20 Improvement in methods of
US167117A (en) * 1875-08-24 piper
US177319A (en) * 1876-05-16 Improvement in rolling-pins
US179354A (en) * 1876-06-27 Improvement in culinary vessels
US192041A (en) * 1877-06-12 Improvement in steam-engine valves
US197843A (en) * 1877-12-04 Improvement in weather-strips
US3783520A (en) * 1970-09-28 1974-01-08 Bell Telephone Labor Inc High accuracy alignment procedure utilizing moire patterns
US4256829A (en) * 1977-05-11 1981-03-17 U.S. Philips Corporation Method of manufacturing solid-state devices in which planar dimensional distortion is reduced
US4512848A (en) * 1984-02-06 1985-04-23 Exxon Research And Engineering Co. Procedure for fabrication of microstructures over large areas using physical replication
US4600309A (en) * 1982-12-30 1986-07-15 Thomson-Csf Process and apparatus for theoptical alignment of patterns in two close-up planes in an exposure means incorporating a divergent radiation source
US4731155A (en) * 1987-04-15 1988-03-15 General Electric Company Process for forming a lithographic mask
US4848911A (en) * 1986-06-11 1989-07-18 Kabushiki Kaisha Toshiba Method for aligning first and second objects, relative to each other, and apparatus for practicing this method
US5028366A (en) * 1988-01-12 1991-07-02 Air Products And Chemicals, Inc. Water based mold release compositions for making molded polyurethane foam
US5074667A (en) * 1988-08-15 1991-12-24 Sumitomo Heavy Industries Co. Ltd. Position detector employing a sector fresnel zone plate
US5148037A (en) * 1988-09-09 1992-09-15 Canon Kabushiki Kaisha Position detecting method and apparatus
US5148036A (en) * 1989-07-18 1992-09-15 Canon Kabushiki Kaisha Multi-axis wafer position detecting system using a mark having optical power
US5184176A (en) * 1990-10-08 1993-02-02 Canon Kabushiki Kaisha Projection exposure apparatus with an aberration compensation device of a projection lens
US5414514A (en) * 1993-06-01 1995-05-09 Massachusetts Institute Of Technology On-axis interferometric alignment of plates using the spatial phase of interference patterns
US5425848A (en) * 1993-03-16 1995-06-20 U.S. Philips Corporation Method of providing a patterned relief of cured photoresist on a flat substrate surface and device for carrying out such a method
US5601641A (en) * 1992-07-21 1997-02-11 Tse Industries, Inc. Mold release composition with polybutadiene and method of coating a mold core
US5737064A (en) * 1994-03-15 1998-04-07 Matsushita Electric Industrial Co., Ltd. Exposure apparatus for transferring a mask pattern onto a substrate
US5772905A (en) * 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
US5802914A (en) * 1996-05-30 1998-09-08 Eastman Kodak Company Alignment mechanism using flexures
US5808742A (en) * 1995-05-31 1998-09-15 Massachusetts Institute Of Technology Optical alignment apparatus having multiple parallel alignment marks
US5849209A (en) * 1995-03-31 1998-12-15 Johnson & Johnson Vision Products, Inc. Mold material made with additives
US5849222A (en) * 1995-09-29 1998-12-15 Johnson & Johnson Vision Products, Inc. Method for reducing lens hole defects in production of contact lens blanks
US5854819A (en) * 1996-02-07 1998-12-29 Canon Kabushiki Kaisha Mask supporting device and correction method therefor, and exposure apparatus and device producing method utilizing the same
US5999245A (en) * 1997-03-27 1999-12-07 Ushiodenki Kabushiki Kaisha Proximity exposure device with distance adjustment device
US6049373A (en) * 1997-02-28 2000-04-11 Sumitomo Heavy Industries, Ltd. Position detection technique applied to proximity exposure
US6137562A (en) * 1996-12-05 2000-10-24 Nikon Corporation Substrate adjuster, substrate holder and substrate holding method
US6150231A (en) * 1998-06-15 2000-11-21 Siemens Aktiengesellschaft Overlay measurement technique using moire patterns
US6309580B1 (en) * 1995-11-15 2001-10-30 Regents Of The University Of Minnesota Release surfaces, particularly for use in nanoimprint lithography
US6334960B1 (en) * 1999-03-11 2002-01-01 Board Of Regents, The University Of Texas System Step and flash imprint lithography
US6383888B1 (en) * 2001-04-18 2002-05-07 Advanced Micro Devices, Inc. Method and apparatus for selecting wafer alignment marks based on film thickness variation
US6388755B1 (en) * 1998-12-03 2002-05-14 Advanced Optical Technologies, Inc. Wireless position and orientation detecting system
US6391217B2 (en) * 1999-12-23 2002-05-21 University Of Massachusetts Methods and apparatus for forming submicron patterns on films
US6482742B1 (en) * 2000-07-18 2002-11-19 Stephen Y. Chou Fluid pressure imprint lithography
US6489068B1 (en) * 2001-02-21 2002-12-03 Advanced Micro Devices, Inc. Process for observing overlay errors on lithographic masks
US6517995B1 (en) * 1999-09-14 2003-02-11 Massachusetts Institute Of Technology Fabrication of finely featured devices by liquid embossing
US6518189B1 (en) * 1995-11-15 2003-02-11 Regents Of The University Of Minnesota Method and apparatus for high density nanostructures
US6522411B1 (en) * 1999-05-25 2003-02-18 Massachusetts Institute Of Technology Optical gap measuring apparatus and method having two-dimensional grating mark with chirp in one direction
US6580172B2 (en) * 2001-03-02 2003-06-17 Motorola, Inc. Lithographic template and method of formation and use
US6630410B2 (en) * 2000-08-31 2003-10-07 Micron Technology, Inc. Self-aligned PECVD etch mask
US6636311B1 (en) * 1998-12-01 2003-10-21 Canon Kabushiki Kaisha Alignment method and exposure apparatus using the same
US6646662B1 (en) * 1998-05-26 2003-11-11 Seiko Epson Corporation Patterning method, patterning apparatus, patterning template, and method for manufacturing the patterning template
US6696220B2 (en) * 2000-10-12 2004-02-24 Board Of Regents, The University Of Texas System Template for room temperature, low pressure micro-and nano-imprint lithography
US6713238B1 (en) * 1998-10-09 2004-03-30 Stephen Y. Chou Microscale patterning and articles formed thereby
US6770852B1 (en) * 2003-02-27 2004-08-03 Lam Research Corporation Critical dimension variation compensation across a wafer by means of local wafer temperature control
US6776094B1 (en) * 1993-10-04 2004-08-17 President & Fellows Of Harvard College Kit For Microcontact Printing
US6791669B2 (en) * 2001-04-12 2004-09-14 Nikon Corporation Positioning device and exposure apparatus including the same
US6871558B2 (en) * 2002-12-12 2005-03-29 Molecular Imprints, Inc. Method for determining characteristics of substrate employing fluid geometries

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1160302B (de) 1962-08-29 1963-12-27 Agfa Ag Photographisches Material
US4326805A (en) * 1980-04-11 1982-04-27 Bell Telephone Laboratories, Incorporated Method and apparatus for aligning mask and wafer members
US4492554A (en) * 1980-08-26 1985-01-08 Corn States Metal Fabricators, Inc. Valve unit for a mold vent
US4724222A (en) * 1986-04-28 1988-02-09 American Telephone And Telegraph Company, At&T Bell Laboratories Wafer chuck comprising a curved reference surface
US4929083A (en) * 1986-06-19 1990-05-29 Xerox Corporation Focus and overlay characterization and optimization for photolithographic exposure
US4887283A (en) * 1988-09-27 1989-12-12 Mitsubishi Denki Kabushiki Kaisha X-ray mask and exposure method employing the same
US4964145A (en) * 1989-07-24 1990-10-16 International Business Machines Corporation System for magnification correction of conductive X-ray lithography mask substrates
JP2694043B2 (ja) * 1990-10-08 1997-12-24 キヤノン株式会社 投影型露光装置
US5072126A (en) * 1990-10-31 1991-12-10 International Business Machines Corporation Promixity alignment using polarized illumination and double conjugate projection lens
US5155749A (en) * 1991-03-28 1992-10-13 International Business Machines Corporation Variable magnification mask for X-ray lithography
US5204739A (en) * 1992-02-07 1993-04-20 Karl Suss America, Inc. Proximity mask alignment using a stored video image
EP0568478A1 (de) * 1992-04-29 1993-11-03 International Business Machines Corporation Dunkelfeld-Ausrichtsystem unter Verwendung von einem konfokalen räumlichen Filter
JP2821073B2 (ja) * 1992-12-18 1998-11-05 松下電器産業株式会社 ギャップ制御装置及びギャップ制御方法
JP3402681B2 (ja) * 1993-06-02 2003-05-06 サンエー技研株式会社 露光における位置合わせ方法
EP0631763B1 (de) * 1993-07-01 1997-03-19 Sulzer Orthopädie AG Füllkörper aus Metall für Knochenhohlräume
US5563684A (en) * 1994-11-30 1996-10-08 Sgs-Thomson Microelectronics, Inc. Adaptive wafer modulator for placing a selected pattern on a semiconductor wafer
US5504793A (en) * 1995-02-17 1996-04-02 Loral Federal Systems Company Magnification correction for 1-X proximity X-Ray lithography
US5545570A (en) * 1995-09-29 1996-08-13 Taiwan Semiconductor Manufacturing Company Method of inspecting first layer overlay shift in global alignment process
US5820894A (en) * 1995-10-06 1998-10-13 Mcdonnell Douglas Corporation Method and apparatus for consolidating a workpiece at elevated temperature
JP3305188B2 (ja) * 1996-02-07 2002-07-22 キヤノン株式会社 原版、原版保持装置およびこれを用いた露光装置ならびにディバイス製造方法
JP2842362B2 (ja) * 1996-02-29 1999-01-06 日本電気株式会社 重ね合わせ測定方法
US20030179354A1 (en) * 1996-03-22 2003-09-25 Nikon Corporation Mask-holding apparatus for a light exposure apparatus and related scanning-exposure method
US6019156A (en) * 1996-05-09 2000-02-01 Kelley Company, Inc. Roll-up door
US6069931A (en) * 1997-02-28 2000-05-30 Canon Kabushiki Kaisha Mask structure and mask holding mechanism for exposure apparatus
JP3450648B2 (ja) 1997-05-09 2003-09-29 キヤノン株式会社 倍率補正装置および倍率補正装置を搭載したｘ線露光装置ならびにデバイス製造方法
US5877861A (en) * 1997-11-14 1999-03-02 International Business Machines Corporation Method for overlay control system
JP3535749B2 (ja) * 1997-12-10 2004-06-07 キヤノン株式会社 ステージ装置、露光装置、並びにデバイス製造方法
US6019166A (en) * 1997-12-30 2000-02-01 Intel Corporation Pickup chuck with an integral heatsink
US6239590B1 (en) * 1998-05-26 2001-05-29 Micron Technology, Inc. Calibration target for calibrating semiconductor wafer test systems
FR2792246B1 (fr) * 1999-04-16 2001-06-22 Aerospatiale Outillage de mise en forme pour la polymerisation de pieces profilees en materiau composite
JP2001358056A (ja) * 2000-06-15 2001-12-26 Canon Inc 露光装置
SG142150A1 (en) * 2000-07-16 2008-05-28 Univ Texas High-resolution overlay alignment systems for imprint lithography
US8016277B2 (en) * 2000-08-21 2011-09-13 Board Of Regents, The University Of Texas System Flexure based macro motion translation stage
WO2002025934A2 (en) * 2000-09-25 2002-03-28 Sensovation Ag Image sensor device, apparatus and method for optical measurements
WO2002047139A2 (en) * 2000-12-04 2002-06-13 Ebara Corporation Methode of forming a copper film on a substrate
US6847433B2 (en) * 2001-06-01 2005-01-25 Agere Systems, Inc. Holder, system, and process for improving overlay in lithography
DE20109656U1 (de) * 2001-06-11 2002-10-24 Stabila-Messgeräte Gustav Ullrich GmbH & Co KG, 76855 Annweiler Wasserwaage
US6963878B2 (en) * 2001-09-24 2005-11-08 Microsoft Corporation Generating a focused data set from an original data set
EP1572860B1 (de) * 2002-04-16 2018-12-05 Princeton University Gradientenstrukturen als grenzflächen zu mikrofluiden und nanofluiden, verfahren zur herstellung und verwendungen davon
US7019819B2 (en) * 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US6936194B2 (en) 2002-09-05 2005-08-30 Molecular Imprints, Inc. Functional patterning material for imprint lithography processes
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US20040065252A1 (en) 2002-10-04 2004-04-08 Sreenivasan Sidlgata V. Method of forming a layer on a substrate to facilitate fabrication of metrology standards
US6665119B1 (en) * 2002-10-15 2003-12-16 Eastman Kodak Company Wire grid polarizer
US6980282B2 (en) * 2002-12-11 2005-12-27 Molecular Imprints, Inc. Method for modulating shapes of substrates
AU2003291477A1 (en) 2002-11-13 2004-06-03 Molecular Imprints, Inc. A chucking system and method for modulating shapes of substrates
US6929762B2 (en) * 2002-11-13 2005-08-16 Molecular Imprints, Inc. Method of reducing pattern distortions during imprint lithography processes
JP4563181B2 (ja) * 2002-12-13 2010-10-13 モレキュラー・インプリンツ・インコーポレーテッド 基板の面曲がりを使用する倍率補正
US7150622B2 (en) * 2003-07-09 2006-12-19 Molecular Imprints, Inc. Systems for magnification and distortion correction for imprint lithography processes
US20050270516A1 (en) * 2004-06-03 2005-12-08 Molecular Imprints, Inc. System for magnification and distortion correction during nano-scale manufacturing
JP2007033676A (ja) * 2005-07-25 2007-02-08 Ricoh Co Ltd 偏光変換光学素子、光変調モジュール及び投射型画像表示装置
US20100271910A1 (en) * 2009-04-24 2010-10-28 Zine-Eddine Boutaghou Method and apparatus for near field photopatterning and improved optical coupling efficiency

Patent Citations (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6343A (en) * 1849-04-17 Moetising-machine
US7799A (en) * 1850-11-26 Improved method of securing rails of railroads
US8334A (en) * 1851-09-02 Drying and oxidizing colored goods
US9673A (en) * 1853-04-19 Machine for rolling- bar-iron
US13118A (en) * 1855-06-19 Burgh
US18190A (en) * 1857-09-15 Improvement in making paper-pulp from ivory
US21254A (en) * 1858-08-24 Improvement in machines for cutting up cornstalks in the field
US21866A (en) * 1858-10-26 Improvement in tools for manufacturing wire riddles
US22888A (en) * 1859-02-08 Process op manueacttrkeng catistic alkalis
US33515A (en) * 1861-10-22 Improvement in carriage-curtain fastenings
US34329A (en) * 1862-02-04 Improved iron ponton
US36201A (en) * 1862-08-19 Napoleon aubin
US42027A (en) * 1864-03-22 Improvement in huller and screen
US46288A (en) * 1865-02-07 Improvement in clasps for wearing apparel
US80471A (en) * 1868-07-28 Improved lubricating compound
US80472A (en) * 1868-07-28 Thomas gibson
US86793A (en) * 1869-02-09 Improvement in the manufacture of gas from petroleum
US90611A (en) * 1869-05-25 Improvement in fence-post socket
US92261A (en) * 1869-07-06 Improvement in countersink
US110856A (en) * 1871-01-10 Improvement in devices for securing the tines of hay-tedders
US112861A (en) * 1871-03-21 Improvement in gauges for saw-tables
US118809A (en) * 1871-09-12 Improvement in blacking apparatus and bootjack combined
US124566A (en) * 1872-03-12 Improvement in combined tools
US132482A (en) * 1872-10-22 Improvement in buckles
US137734A (en) * 1873-04-08 Improvement in fertilizing-distributers
US146792A (en) * 1874-01-27 Improvement in rotary printing presses for cards and tickets
US150398A (en) * 1874-05-05 Improvement in baby-walkers
US156108A (en) * 1874-10-20 Improvement in methods of
US167117A (en) * 1875-08-24 piper
US177319A (en) * 1876-05-16 Improvement in rolling-pins
US179354A (en) * 1876-06-27 Improvement in culinary vessels
US192041A (en) * 1877-06-12 Improvement in steam-engine valves
US197843A (en) * 1877-12-04 Improvement in weather-strips
US53146A (en) * 1866-03-13 1866-03-13 Improvement in time-pieces
US3783520A (en) * 1970-09-28 1974-01-08 Bell Telephone Labor Inc High accuracy alignment procedure utilizing moire patterns
US4256829A (en) * 1977-05-11 1981-03-17 U.S. Philips Corporation Method of manufacturing solid-state devices in which planar dimensional distortion is reduced
US4600309A (en) * 1982-12-30 1986-07-15 Thomson-Csf Process and apparatus for theoptical alignment of patterns in two close-up planes in an exposure means incorporating a divergent radiation source
US4512848A (en) * 1984-02-06 1985-04-23 Exxon Research And Engineering Co. Procedure for fabrication of microstructures over large areas using physical replication
US4848911A (en) * 1986-06-11 1989-07-18 Kabushiki Kaisha Toshiba Method for aligning first and second objects, relative to each other, and apparatus for practicing this method
US4731155A (en) * 1987-04-15 1988-03-15 General Electric Company Process for forming a lithographic mask
US5028366A (en) * 1988-01-12 1991-07-02 Air Products And Chemicals, Inc. Water based mold release compositions for making molded polyurethane foam
US5074667A (en) * 1988-08-15 1991-12-24 Sumitomo Heavy Industries Co. Ltd. Position detector employing a sector fresnel zone plate
US5148037A (en) * 1988-09-09 1992-09-15 Canon Kabushiki Kaisha Position detecting method and apparatus
US5148036A (en) * 1989-07-18 1992-09-15 Canon Kabushiki Kaisha Multi-axis wafer position detecting system using a mark having optical power
US5184176A (en) * 1990-10-08 1993-02-02 Canon Kabushiki Kaisha Projection exposure apparatus with an aberration compensation device of a projection lens
US5601641A (en) * 1992-07-21 1997-02-11 Tse Industries, Inc. Mold release composition with polybutadiene and method of coating a mold core
US5425848A (en) * 1993-03-16 1995-06-20 U.S. Philips Corporation Method of providing a patterned relief of cured photoresist on a flat substrate surface and device for carrying out such a method
US5414514A (en) * 1993-06-01 1995-05-09 Massachusetts Institute Of Technology On-axis interferometric alignment of plates using the spatial phase of interference patterns
US6776094B1 (en) * 1993-10-04 2004-08-17 President & Fellows Of Harvard College Kit For Microcontact Printing
US5737064A (en) * 1994-03-15 1998-04-07 Matsushita Electric Industrial Co., Ltd. Exposure apparatus for transferring a mask pattern onto a substrate
US5849209A (en) * 1995-03-31 1998-12-15 Johnson & Johnson Vision Products, Inc. Mold material made with additives
US6088103A (en) * 1995-05-31 2000-07-11 Massachusetts Institute Of Technology Optical interference alignment and gapping apparatus
US5808742A (en) * 1995-05-31 1998-09-15 Massachusetts Institute Of Technology Optical alignment apparatus having multiple parallel alignment marks
US5849222A (en) * 1995-09-29 1998-12-15 Johnson & Johnson Vision Products, Inc. Method for reducing lens hole defects in production of contact lens blanks
US6828244B2 (en) * 1995-11-15 2004-12-07 Regents Of The University Of Minnesota Method and apparatus for high density nanostructures
US6309580B1 (en) * 1995-11-15 2001-10-30 Regents Of The University Of Minnesota Release surfaces, particularly for use in nanoimprint lithography
US6518189B1 (en) * 1995-11-15 2003-02-11 Regents Of The University Of Minnesota Method and apparatus for high density nanostructures
US5772905A (en) * 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
US6809356B2 (en) * 1995-11-15 2004-10-26 Regents Of The University Of Minnesota Method and apparatus for high density nanostructures
US5854819A (en) * 1996-02-07 1998-12-29 Canon Kabushiki Kaisha Mask supporting device and correction method therefor, and exposure apparatus and device producing method utilizing the same
US5802914A (en) * 1996-05-30 1998-09-08 Eastman Kodak Company Alignment mechanism using flexures
US6137562A (en) * 1996-12-05 2000-10-24 Nikon Corporation Substrate adjuster, substrate holder and substrate holding method
US6295120B1 (en) * 1997-02-28 2001-09-25 Sumitomo Heavy Industries, Ltd. Position detection technique applied to proximity exposure
US6285439B1 (en) * 1997-02-28 2001-09-04 Sumitomo Heavy Industries, Ltd. Position detection technique applied to proximity exposure
US6049373A (en) * 1997-02-28 2000-04-11 Sumitomo Heavy Industries, Ltd. Position detection technique applied to proximity exposure
US5999245A (en) * 1997-03-27 1999-12-07 Ushiodenki Kabushiki Kaisha Proximity exposure device with distance adjustment device
US6646662B1 (en) * 1998-05-26 2003-11-11 Seiko Epson Corporation Patterning method, patterning apparatus, patterning template, and method for manufacturing the patterning template
US6150231A (en) * 1998-06-15 2000-11-21 Siemens Aktiengesellschaft Overlay measurement technique using moire patterns
US6713238B1 (en) * 1998-10-09 2004-03-30 Stephen Y. Chou Microscale patterning and articles formed thereby
US6636311B1 (en) * 1998-12-01 2003-10-21 Canon Kabushiki Kaisha Alignment method and exposure apparatus using the same
US6388755B1 (en) * 1998-12-03 2002-05-14 Advanced Optical Technologies, Inc. Wireless position and orientation detecting system
US6334960B1 (en) * 1999-03-11 2002-01-01 Board Of Regents, The University Of Texas System Step and flash imprint lithography
US6522411B1 (en) * 1999-05-25 2003-02-18 Massachusetts Institute Of Technology Optical gap measuring apparatus and method having two-dimensional grating mark with chirp in one direction
US6517995B1 (en) * 1999-09-14 2003-02-11 Massachusetts Institute Of Technology Fabrication of finely featured devices by liquid embossing
US6391217B2 (en) * 1999-12-23 2002-05-21 University Of Massachusetts Methods and apparatus for forming submicron patterns on films
US6482742B1 (en) * 2000-07-18 2002-11-19 Stephen Y. Chou Fluid pressure imprint lithography
US6630410B2 (en) * 2000-08-31 2003-10-07 Micron Technology, Inc. Self-aligned PECVD etch mask
US6696220B2 (en) * 2000-10-12 2004-02-24 Board Of Regents, The University Of Texas System Template for room temperature, low pressure micro-and nano-imprint lithography
US6489068B1 (en) * 2001-02-21 2002-12-03 Advanced Micro Devices, Inc. Process for observing overlay errors on lithographic masks
US6580172B2 (en) * 2001-03-02 2003-06-17 Motorola, Inc. Lithographic template and method of formation and use
US6791669B2 (en) * 2001-04-12 2004-09-14 Nikon Corporation Positioning device and exposure apparatus including the same
US6383888B1 (en) * 2001-04-18 2002-05-07 Advanced Micro Devices, Inc. Method and apparatus for selecting wafer alignment marks based on film thickness variation
US6871558B2 (en) * 2002-12-12 2005-03-29 Molecular Imprints, Inc. Method for determining characteristics of substrate employing fluid geometries
US6770852B1 (en) * 2003-02-27 2004-08-03 Lam Research Corporation Critical dimension variation compensation across a wafer by means of local wafer temperature control

Cited By (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080174046A1 (en) * 2002-07-11 2008-07-24 Molecular Imprints Inc. Capillary Imprinting Technique
US7708926B2 (en) 2002-07-11 2010-05-04 Molecular Imprints, Inc. Capillary imprinting technique
US7691313B2 (en) 2002-11-13 2010-04-06 Molecular Imprints, Inc. Method for expelling gas positioned between a substrate and a mold
US8211214B2 (en) 2003-10-02 2012-07-03 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US7880872B2 (en) 2004-11-30 2011-02-01 Molecular Imprints, Inc. Interferometric analysis method for the manufacture of nano-scale devices
US7785096B2 (en) 2004-11-30 2010-08-31 Molecular Imprints, Inc. Enhanced multi channel alignment
US7360851B1 (en) 2006-02-15 2008-04-22 Kla-Tencor Technologies Corporation Automated pattern recognition of imprint technology
US8012395B2 (en) 2006-04-18 2011-09-06 Molecular Imprints, Inc. Template having alignment marks formed of contrast material
WO2007132320A2 (en) 2006-05-11 2007-11-22 Molecular Imprints, Inc. Template having a varying thickness
EP2016613A4 (de) * 2006-05-11 2009-12-02 Molecular Imprints Inc Vorlage mit veränderlicher dicke
EP2016613A2 (de) * 2006-05-11 2009-01-21 Molecular Imprints, Inc. Vorlage mit veränderlicher dicke
USRE47483E1 (en) 2006-05-11 2019-07-02 Molecular Imprints, Inc. Template having a varying thickness to facilitate expelling a gas positioned between a substrate and the template
US20080303187A1 (en) * 2006-12-29 2008-12-11 Molecular Imprints, Inc. Imprint Fluid Control
US20090026657A1 (en) * 2007-07-20 2009-01-29 Molecular Imprints, Inc. Alignment System and Method for a Substrate in a Nano-Imprint Process
US7837907B2 (en) 2007-07-20 2010-11-23 Molecular Imprints, Inc. Alignment system and method for a substrate in a nano-imprint process
US20090147237A1 (en) * 2007-12-05 2009-06-11 Molecular Imprints, Inc. Spatial Phase Feature Location
US20090200710A1 (en) * 2008-02-08 2009-08-13 Molecular Imprints, Inc. Extrusion reduction in imprint lithography
US8361371B2 (en) 2008-02-08 2013-01-29 Molecular Imprints, Inc. Extrusion reduction in imprint lithography
US11161280B2 (en) 2008-10-24 2021-11-02 Molecular Imprints, Inc. Strain and kinetics control during separation phase of imprint process
US20140117574A1 (en) * 2008-10-24 2014-05-01 Molecular Imprints, Inc. Strain and Kinetics Control During Separation Phase of Imprint Process
US20100102487A1 (en) * 2008-10-28 2010-04-29 Molecular Imprints, Inc. Optical System for Use in Stage Control
US8345242B2 (en) 2008-10-28 2013-01-01 Molecular Imprints, Inc. Optical system for use in stage control
US20100110434A1 (en) * 2008-11-04 2010-05-06 Molecular Imprints, Inc. Alignment for Edge Field Nano-Imprinting
US20100109202A1 (en) * 2008-11-04 2010-05-06 Molecular Imprints, Inc. Substrate Alignment
US8231821B2 (en) 2008-11-04 2012-07-31 Molecular Imprints, Inc. Substrate alignment
US8432548B2 (en) 2008-11-04 2013-04-30 Molecular Imprints, Inc. Alignment for edge field nano-imprinting
US8553207B2 (en) * 2008-12-31 2013-10-08 Asml Holdings N.V. Optically compensated unidirectional reticle bender
US20100167189A1 (en) * 2008-12-31 2010-07-01 Asml Holding N.V. Optically Compensated Unidirectional Reticle Bender
US20110001254A1 (en) * 2009-07-06 2011-01-06 Asml Netherlands B.V. Imprint Lithography Apparatus and Method
US10712678B2 (en) 2009-07-06 2020-07-14 Asml Netherlands B.V. Imprint lithography apparatus and method
US20110084417A1 (en) * 2009-10-08 2011-04-14 Molecular Imprints, Inc. Large area linear array nanoimprinting
US9568819B2 (en) * 2011-02-02 2017-02-14 Canon Kabushiki Kaisha Holding apparatus, imprint apparatus and article manufacturing method using same
US20120193832A1 (en) * 2011-02-02 2012-08-02 Canon Kabushiki Kaisha Holding apparatus, imprint apparatus and article manufacturing method using same
US9541847B2 (en) 2011-07-21 2017-01-10 Kabushiki Kaisha Toshiba Imprint method and imprint system
US9892949B2 (en) 2011-10-14 2018-02-13 Canon Kabushiki Kaisha Imprint method, imprint apparatus, and article manufacturing method
US9566741B2 (en) 2011-10-14 2017-02-14 Canon Kabushiki Kaisha Imprint method, imprint apparatus, and article manufacturing method
US9594301B2 (en) 2011-10-14 2017-03-14 Canon Kabushiki Kaisha Imprint apparatus and article manufacturing method using same
US11249394B2 (en) 2011-10-14 2022-02-15 Canon Kabushiki Kaisha Imprint methods for forming a pattern of an imprint material on a substrate-side pattern region of a substrate by using a mold, and related device manufacturing methods
US9201298B2 (en) 2011-10-14 2015-12-01 Canon Kabushiki Kaisha Imprint method, imprint apparatus, and article manufacturing method
US10663858B2 (en) 2011-10-14 2020-05-26 Canon Kabushiki Kaisha Imprint apparatus that forms a pattern of an imprint material on a substrate-side pattern region of a substrate using a mold, and related methods
US9682510B2 (en) * 2012-05-08 2017-06-20 Canon Kabushiki Kaisha Imprint apparatus and method of manufacturing article
US20130300031A1 (en) * 2012-05-08 2013-11-14 Canon Kabushiki Kaisha Imprint apparatus and method of manufacturing article
US9067356B2 (en) * 2012-08-09 2015-06-30 Dai Nippon Printing Co., Ltd. Method for producing fine convex pattern structure and fine convex pattern production system
US20140327188A1 (en) * 2012-08-09 2014-11-06 Dai Nippon Printing Co., Ltd. Method for producing fine convex pattern structure and fine convex pattern production system
US10300640B2 (en) * 2014-01-24 2019-05-28 Canon Kabushiki Kaisha Imprint apparatus and method of manufacturing article
US10919195B2 (en) 2014-01-24 2021-02-16 Canon Kabushiki Kaisha Imprint apparatus and method of manufacturing article
US11779472B2 (en) 2014-03-25 2023-10-10 3D Systems, Inc. Methods, devices, and systems for the fabrication of materials and tissues utilizing electromagnetic radiation
US11267012B2 (en) * 2014-06-25 2022-03-08 Universal Display Corporation Spatial control of vapor condensation using convection
US11591686B2 (en) 2014-06-25 2023-02-28 Universal Display Corporation Methods of modulating flow during vapor jet deposition of organic materials
US11220737B2 (en) 2014-06-25 2022-01-11 Universal Display Corporation Systems and methods of modulating flow during vapor jet deposition of organic materials
US11121322B2 (en) 2015-10-12 2021-09-14 Universal Display Corporation Apparatus and method to deliver organic material via organic vapor-jet printing (OVJP)
US11181363B2 (en) * 2016-04-25 2021-11-23 Canon Kabushiki Kaisha Measurement device, imprint apparatus, method for manufacturing product, light amount determination method, and light amount adjustment method
US20170307367A1 (en) * 2016-04-25 2017-10-26 Canon Kabushiki Kaisha Measurement device, imprint apparatus, method for manufacturing product, light amount determination method, and light amount adjustment method
US11203151B2 (en) 2017-04-04 2021-12-21 3D Systems, Inc. Multi-headed auto-calibrating bioprinter with heads that heat, cool, and crosslink
WO2018187472A1 (en) * 2017-04-04 2018-10-11 Allevi, Inc. Multi-headed auto-calibrating bioprinter with heads that heat, cool, and crosslink
US11422461B2 (en) * 2019-04-16 2022-08-23 Canon Kabushiki Kaisha Imprint apparatus and method of manufacturing article
US11880132B2 (en) 2019-04-16 2024-01-23 Canon Kabushiki Kaisha Imprint apparatus and method of manufacturing article
US11994797B2 (en) 2020-10-28 2024-05-28 Canon Kabushiki Kaisha System and method for shaping a film with a scaled calibration measurement parameter

Also Published As

Publication number Publication date
JP2008504141A (ja) 2008-02-14
CN1981236A (zh) 2007-06-13
KR20070031334A (ko) 2007-03-19
US7170589B2 (en) 2007-01-30
WO2005121892A3 (en) 2006-05-04
EP2267531B1 (de) 2016-08-10
US20060001194A1 (en) 2006-01-05
JP4688872B2 (ja) 2011-05-25
EP2267531A2 (de) 2010-12-29
TWI298816B (en) 2008-07-11
CN1981236B (zh) 2010-04-21
DE602005023153D1 (de) 2010-10-07
US20060001857A1 (en) 2006-01-05
ATE479130T1 (de) 2010-09-15
US7298456B2 (en) 2007-11-20
TW200611062A (en) 2006-04-01
EP2207061B1 (de) 2011-11-23
EP1754108A4 (de) 2007-10-24
EP1754108A2 (de) 2007-02-21
EP2207061A3 (de) 2010-09-01
EP2207061A2 (de) 2010-07-14
US7420654B2 (en) 2008-09-02
ATE534937T1 (de) 2011-12-15
WO2005121892A2 (en) 2005-12-22
EP1754108B1 (de) 2010-08-25
KR101113030B1 (ko) 2012-03-14
EP2267531A3 (de) 2011-01-05
US20050269745A1 (en) 2005-12-08

Similar Documents

Publication Publication Date Title
US20050270516A1 (en) System for magnification and distortion correction during nano-scale manufacturing
US7224443B2 (en) Imprint lithography substrate processing tool for modulating shapes of substrates
US6980282B2 (en) Method for modulating shapes of substrates
US7150622B2 (en) Systems for magnification and distortion correction for imprint lithography processes
EP2261966B1 (de) Ein Lithographiesystem mit einem Halterungssystem
US7323130B2 (en) Magnification correction employing out-of-plane distortion of a substrate
JP3958344B2 (ja) インプリント装置、インプリント方法及びチップの製造方法

Legal Events

Date Code Title Description
AS Assignment

Owner name: MOLECULAR IMPRINTS, INC., TEXAS

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHERALA, ANSHUMAN;CHOI, BYUNG-JIN;NIMMAKAYALA, PAWAN K.;AND OTHERS;REEL/FRAME:015959/0662

Effective date: 20050324

AS Assignment

Owner name: MOLECULAR IMPRINTS, INC., TEXAS

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHERALA, ANSHUMAN;CHOL, BYUNG-JIN;NIMMAKAYALA, PAWAN K.;AND OTHERS;REEL/FRAME:016184/0252

Effective date: 20050324

STCB Information on status: application discontinuation

Free format text: EXPRESSLY ABANDONED -- DURING EXAMINATION

AS Assignment

Owner name: NAVY, UNITED STATES OF AMERICA AS REPRESENTED BY T

Free format text: CONFIRMATORY LICENSE;ASSIGNOR:MOLECULAR IMPRINTS, INC.;REEL/FRAME:027992/0806

Effective date: 20111202