US20040058080A1 - Method for creating silicon dioxide film - Google Patents

Method for creating silicon dioxide film Download PDF

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Publication number
US20040058080A1
US20040058080A1 US10/470,060 US47006003A US2004058080A1 US 20040058080 A1 US20040058080 A1 US 20040058080A1 US 47006003 A US47006003 A US 47006003A US 2004058080 A1 US2004058080 A1 US 2004058080A1
Authority
US
United States
Prior art keywords
silicon
silicon dioxide
dioxide film
film
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/470,060
Other languages
English (en)
Inventor
Masahiro Kawasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiren KST Corp
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Assigned to KST WORLD CORP. reassignment KST WORLD CORP. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KAWASAKI, MASAHIRO
Publication of US20040058080A1 publication Critical patent/US20040058080A1/en
Priority to US11/878,717 priority Critical patent/US7754286B2/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Integrated Circuits (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
US10/470,060 2001-12-06 2002-11-25 Method for creating silicon dioxide film Abandoned US20040058080A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US11/878,717 US7754286B2 (en) 2001-12-06 2007-07-26 Method of forming a silicon dioxide film

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-372474 2001-12-06
JP2001372474A JP4398126B2 (ja) 2001-12-06 2001-12-06 二酸化シリコン膜の生成方法
PCT/JP2002/012272 WO2003048041A1 (fr) 2001-12-06 2002-11-25 Procede permettant de former une couche de dioxyde de silicium

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/878,717 Continuation US7754286B2 (en) 2001-12-06 2007-07-26 Method of forming a silicon dioxide film

Publications (1)

Publication Number Publication Date
US20040058080A1 true US20040058080A1 (en) 2004-03-25

Family

ID=19181362

Family Applications (2)

Application Number Title Priority Date Filing Date
US10/470,060 Abandoned US20040058080A1 (en) 2001-12-06 2002-11-25 Method for creating silicon dioxide film
US11/878,717 Expired - Lifetime US7754286B2 (en) 2001-12-06 2007-07-26 Method of forming a silicon dioxide film

Family Applications After (1)

Application Number Title Priority Date Filing Date
US11/878,717 Expired - Lifetime US7754286B2 (en) 2001-12-06 2007-07-26 Method of forming a silicon dioxide film

Country Status (10)

Country Link
US (2) US20040058080A1 (de)
EP (1) EP1437328B1 (de)
JP (1) JP4398126B2 (de)
KR (1) KR100588081B1 (de)
AU (1) AU2002365849A1 (de)
CA (1) CA2436001C (de)
DE (1) DE60217701T2 (de)
DK (1) DK1437328T3 (de)
TW (1) TWI282116B (de)
WO (1) WO2003048041A1 (de)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050009255A1 (en) * 2003-07-10 2005-01-13 International Rectifier Corp. Process for forming thick oxides on Si or SiC for semiconductor devices
US20100313871A1 (en) * 2008-02-06 2010-12-16 Akihiro Iritani Glass article
US8455289B1 (en) * 2011-12-02 2013-06-04 Texas Instruments Incorporated Low frequency CMUT with thick oxide
CN112331556A (zh) * 2020-11-02 2021-02-05 上海华虹宏力半导体制造有限公司 非晶硅薄膜成膜方法
CN114724928A (zh) * 2022-06-08 2022-07-08 济南晶正电子科技有限公司 一种具有高厚度隔离层的复合衬底及其制备方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010141221A (ja) * 2008-12-15 2010-06-24 Shin-Etsu Chemical Co Ltd 酸化膜付きシリコン基板の製造方法
JP2013048218A (ja) * 2011-07-22 2013-03-07 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法
US8734903B2 (en) 2011-09-19 2014-05-27 Pilkington Group Limited Process for forming a silica coating on a glass substrate
CN104008995B (zh) * 2013-02-22 2017-09-01 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制备方法
RU2660622C1 (ru) * 2017-09-19 2018-07-06 Акционерное общество "Центральный научно-исследовательский институт "Электрон" Пленка двуокиси кремния на кремнии и способ ее получения
CN113363138A (zh) * 2021-06-01 2021-09-07 上海晶盟硅材料有限公司 外延生长方法和设备

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3807039A (en) * 1971-04-05 1974-04-30 Rca Corp Method for making a radio frequency transistor structure
US4604304A (en) * 1985-07-03 1986-08-05 Rca Corporation Process of producing thick layers of silicon dioxide
US4698316A (en) * 1985-01-23 1987-10-06 Rca Corporation Method of depositing uniformly thick selective epitaxial silicon
US4921833A (en) * 1987-05-26 1990-05-01 Sumitomo Electric Industries, Ltd. Superconducting member
US5088003A (en) * 1989-08-24 1992-02-11 Tosoh Corporation Laminated silicon oxide film capacitors and method for their production
US5521126A (en) * 1993-06-25 1996-05-28 Nec Corporation Method of fabricating semiconductor devices
US20010001384A1 (en) * 1998-07-29 2001-05-24 Takeshi Arai Silicon epitaxial wafer and production method therefor
US6239044B1 (en) * 1998-06-08 2001-05-29 Sony Corporation Apparatus for forming silicon oxide film and method of forming silicon oxide film
US6468845B1 (en) * 1992-12-25 2002-10-22 Hitachi, Ltd. Semiconductor apparatus having conductive thin films and manufacturing apparatus therefor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3158505A (en) * 1962-07-23 1964-11-24 Fairchild Camera Instr Co Method of placing thick oxide coatings on silicon and article
JPS5019363A (de) * 1973-06-21 1975-02-28
JPS6066443A (ja) * 1983-09-21 1985-04-16 Fujitsu Ltd 半導体装置の製造方法
JPS6136936A (ja) * 1984-07-30 1986-02-21 Matsushita Electronics Corp 半導体装置の製造方法
US4902086A (en) * 1988-03-03 1990-02-20 At&T Bell Laboratories Device including a substrate-supported optical waveguide, and method of manufacture
JPH02246226A (ja) * 1989-03-20 1990-10-02 Matsushita Electron Corp Ｍｏｓトランジスタの製造方法
JPH05210022A (ja) * 1992-01-31 1993-08-20 Sumitomo Electric Ind Ltd 導波路作製方法
JPH05232683A (ja) 1992-02-20 1993-09-10 Toppan Printing Co Ltd 位相推移フォトマスクの位相推移体の形成方法
JPH06275689A (ja) * 1993-03-22 1994-09-30 Sanyo Electric Co Ltd 半導体装置の評価方法および評価装置
JP3800788B2 (ja) * 1998-01-29 2006-07-26 ソニー株式会社 シリコン酸化膜の形成方法
JP3697155B2 (ja) * 2000-11-10 2005-09-21 ケイ・エス・ティ・ワ−ルド株式会社 二酸化シリコン膜生成方法及び光導波路生成方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3807039A (en) * 1971-04-05 1974-04-30 Rca Corp Method for making a radio frequency transistor structure
US4698316A (en) * 1985-01-23 1987-10-06 Rca Corporation Method of depositing uniformly thick selective epitaxial silicon
US4604304A (en) * 1985-07-03 1986-08-05 Rca Corporation Process of producing thick layers of silicon dioxide
US4921833A (en) * 1987-05-26 1990-05-01 Sumitomo Electric Industries, Ltd. Superconducting member
US5088003A (en) * 1989-08-24 1992-02-11 Tosoh Corporation Laminated silicon oxide film capacitors and method for their production
US6468845B1 (en) * 1992-12-25 2002-10-22 Hitachi, Ltd. Semiconductor apparatus having conductive thin films and manufacturing apparatus therefor
US5521126A (en) * 1993-06-25 1996-05-28 Nec Corporation Method of fabricating semiconductor devices
US6239044B1 (en) * 1998-06-08 2001-05-29 Sony Corporation Apparatus for forming silicon oxide film and method of forming silicon oxide film
US20010001384A1 (en) * 1998-07-29 2001-05-24 Takeshi Arai Silicon epitaxial wafer and production method therefor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050009255A1 (en) * 2003-07-10 2005-01-13 International Rectifier Corp. Process for forming thick oxides on Si or SiC for semiconductor devices
US7754550B2 (en) 2003-07-10 2010-07-13 International Rectifier Corporation Process for forming thick oxides on Si or SiC for semiconductor devices
US20100313871A1 (en) * 2008-02-06 2010-12-16 Akihiro Iritani Glass article
US8770183B2 (en) * 2008-02-06 2014-07-08 Nippon Electric Glass Co., Ltd. Glass article
US8455289B1 (en) * 2011-12-02 2013-06-04 Texas Instruments Incorporated Low frequency CMUT with thick oxide
CN112331556A (zh) * 2020-11-02 2021-02-05 上海华虹宏力半导体制造有限公司 非晶硅薄膜成膜方法
CN114724928A (zh) * 2022-06-08 2022-07-08 济南晶正电子科技有限公司 一种具有高厚度隔离层的复合衬底及其制备方法

Also Published As

Publication number Publication date
US7754286B2 (en) 2010-07-13
EP1437328B1 (de) 2007-01-17
TW200300964A (en) 2003-06-16
DE60217701D1 (de) 2007-03-08
EP1437328A1 (de) 2004-07-14
CA2436001A1 (en) 2003-06-12
DE60217701T2 (de) 2007-10-25
TWI282116B (en) 2007-06-01
US20070266934A1 (en) 2007-11-22
WO2003048041A1 (fr) 2003-06-12
EP1437328A4 (de) 2006-04-05
KR100588081B1 (ko) 2006-06-08
JP2003192328A (ja) 2003-07-09
JP4398126B2 (ja) 2010-01-13
KR20040023589A (ko) 2004-03-18
CA2436001C (en) 2009-10-27
AU2002365849A1 (en) 2003-06-17
DK1437328T3 (da) 2007-03-05

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Legal Events

Date Code Title Description
AS Assignment

Owner name: KST WORLD CORP., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:KAWASAKI, MASAHIRO;REEL/FRAME:014686/0069

Effective date: 20030707

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION