US20030217764A1 - Process and composition for removing residues from the microstructure of an object - Google Patents

Process and composition for removing residues from the microstructure of an object Download PDF

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Publication number
US20030217764A1
US20030217764A1 US10/152,782 US15278202A US2003217764A1 US 20030217764 A1 US20030217764 A1 US 20030217764A1 US 15278202 A US15278202 A US 15278202A US 2003217764 A1 US2003217764 A1 US 2003217764A1
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United States
Prior art keywords
additive
residues
carbon dioxide
process according
inhibitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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US10/152,782
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English (en)
Inventor
Kaoru Masuda
Katsuyuki IIjima
Tetsuya Yoshikawa
Darryl Peters
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Kobe Steel Ltd
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Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to US10/152,782 priority Critical patent/US20030217764A1/en
Assigned to KABUSHIKI KAISHA KOBE SEIKO SHO reassignment KABUSHIKI KAISHA KOBE SEIKO SHO ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: IIJIMA, KATSUYUKI, MASUDA, KAORU, PETERS, DARRYL W., YOSHIKAWA, TETSUYA
Priority to SG200402532A priority patent/SG128463A1/en
Priority to CNB031378153A priority patent/CN100499018C/zh
Priority to CNA2004100621728A priority patent/CN1563315A/zh
Priority to TW093118357A priority patent/TWI249573B/zh
Priority to DE60306617T priority patent/DE60306617T2/de
Priority to KR1020030032526A priority patent/KR100562597B1/ko
Priority to AT03011130T priority patent/ATE322740T1/de
Priority to DE60304389T priority patent/DE60304389T2/de
Priority to TW092113865A priority patent/TWI231824B/zh
Priority to EP03011130A priority patent/EP1365441B1/en
Priority to EP04010688A priority patent/EP1453080B1/en
Priority to JP2003146503A priority patent/JP4256722B2/ja
Publication of US20030217764A1 publication Critical patent/US20030217764A1/en
Priority to US10/822,804 priority patent/US7220714B2/en
Priority to KR1020040028938A priority patent/KR100551864B1/ko
Priority to JP2004249222A priority patent/JP2005089746A/ja
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Definitions

  • the present invention relates to a process and a composition for removing residues from the microstructure of an object.
  • the present invention specifically relates to a process and a composition for removing residues, such as resists, generated during a semiconductor manufacturing process from a semiconductor wafer surface having a fine structure of convex and concave portions.
  • low-k materials materials having dielectric constant lower than 4.
  • the present invention is objected to provide a novel and effective cleaning without significant damage to the low-k materials.
  • An object of the present invention is, therefore, to provide a process and a composition for effectively removing residues from the microstructure of an object without significant damages to the low-k materials.
  • a process for removing residues from the object which comprises steps of preparing a remover including carbon dioxide, an additive for removing the residues, an inhibitor for protecting low-k damage and a co-solvent for dissolving said additive in said carbon dioxide at a pressurized fluid condition, and bringing the object into contact with said remover so as to remove the residues from the object.
  • a composition is further provided for removing residue from the object, which comprises carbon dioxide, a fluoride containing additive, a co-solvent or mixture of co-solvents capable of dissolving the fluoride containing additive, and an inhibitor.
  • FIG. 1 is a schematic diagram of an apparatus for removing residues in accordance with the present invention.
  • the present invention is applied to the microstructure of an object, e.g., a semiconductor wafer having a fine structure of convex and concave portions on its surface, and a substrate made of a metal, plastic or ceramic which forms or remains continuous or non-continuous layer of materials different therefrom.
  • an object e.g., a semiconductor wafer having a fine structure of convex and concave portions on its surface, and a substrate made of a metal, plastic or ceramic which forms or remains continuous or non-continuous layer of materials different therefrom.
  • said remover used in this invention includes carbon dioxide, an additive for removing the residues, an inhibitor for suppressing residues and a co-solvent for dissolving said additive and said inhibitor in said carbon dioxide at a pressurized fluid condition.
  • the pressurized carbon dioxide has a high dispersion rate and enables the dissolved residues to disperse therein. If carbon dioxide is converted to a supercritical condition, it penetrates into fine pattern portions of the object more effectively. By this feature, the additive is conveyed into pores or concave portions on a surface of the object due to the low viscosity of carbon dioxide.
  • the carbon dioxide is pressurized to 5 MPa or more, but not less than 7.1 MPa at a temperature of 31° C. to convert the carbon dioxide to a supercritical fluid condition.
  • the preferred fluoride compounds includes at least one element selected from the group consisting of tetramethylammoniumfluoride, tetraethylammoniumfluoride, tetrapropylammoniumfluoride, tetrabutylammoniumfluoride, cholinefluoride.
  • TMAF tetramethylammoniumfluoride
  • the concentration of the additive is too low, cleaning of residues is not sufficient
  • the lower limit of the additive is 0.001 wt %, preferably 0.005 wt %, and more preferably 0.01 wt %.
  • the concentration is more than 0.1 wt %, low-k materials are damaged because of excessive etching of low-k materials.
  • the upper range of the additive is 0.1 wt %, preferably 0.05 wt %, and more preferably 0.03 wt %.
  • the remover in the present invention also includespolyhydric alcohol.
  • Polyhydric alcohol act as an inhibitor that protects the low-k materials from the significant damage from the additives such as fluorides.
  • additives such as fluorides.
  • liquid-like residues were recognized as byproducts originated from etching reactions between some of the compounds in the remover and a part of low-k materials. Such byproducts could not be removed and appeared as liquid-like residues because such products from low-k materials were not easily dissolved into supercritical carbon dioxide.
  • the remover includes polyhydric alcohols as an inhibitor to protect low-k materials from the damage.
  • polyhydric alcohol might adsorb on the surface of the low-k materials and protect the surface from the attack of the chemicals.
  • Polyhydric alcohols may be dihydric alcohol such as ethyleneglycol, propyleneglycol, trimethyleneglycol, diethyleneglycol, dipropyleneglycol, 1,2- , 1,3-, 1,4- or 2,3-butanediol, pentamehyleneglycol, hexyleneglycol, octyleneglycol or trihydric alcohols such as glycerin, trimethylolpropanae, 1,2,6-hexanetriol, and tetrahydric alcohols such as pentaelythritol.
  • polyethyleneglycol or polypropyleneglycol may be used.
  • dihydric alcohols are preferable and ethyleneglycol and propyleneglycol are more preferable.
  • the concentration of the polyhydric alcohols is too low, the protection of the low-k is not sufficient and amount of liquid-like residues increases.
  • the lower range of the polyhydric alcohols is 0.005 wt %, preferably 0.007 wt %, and more preferably 0.01 wt %.
  • the concentration is higher than 0.1 wt %, the efficiency of the protection is saturated.
  • the upper range of the polyhydric alocholos is 0.1 wt %, preferably 0.07 wt %, and more preferably 0.05 wt %.
  • the present invention uses co-solvent to dissolve them into carbon dioxide.
  • the co-solvent of the present invention is a compound having an affinity to both carbon dioxide and the additive. Such a co-solvent dissolves or disperses the additive homogeneously in the pressurized carbon dioxidein fluid condition.
  • any co-solvent is used if it can make additives and polyhydric alcohols soluble into pressurized carbon dioxide, alcohols are preferable.
  • the alcohol may be any alcohol, e.g.
  • ethanol methanol, n-propanol, iso-propanol, n-butanol, iso-butanol, diethyleneglycolmonomethyleter, diethyleneglycolmonoethyleter, and hexafluoro isopropanol.
  • methanol ethanol and iso-propanol are preferable because they act as a good co-solvent to wide range of compounds.
  • the kind and amount of the co-solvent are selected depending on the kind and amount of the additive to carbon dioxide.
  • the amount of the co-solvent is preferably five times or more than that of the additive because the remover easily becomes homogeneous and transparent.
  • the remover may include the co-solvent in a range of 1 wt. % to 50 wt. %. If more than 50 wt. % of the co-solvent is added, the penetration rate of the remover decreases due to less amount of carbon dioxide.
  • TMAF When TMAF is used as an additive, TMAF should be initially dissolved into said co-solvent because TMAF is a sold at ambient temperature. At this time, solvents such as dimethylacetamide (DMAC) or de-ionized water (DIW) could be added to help TMAF to be dissolved into carbon dioxide more easily. The amount of such solvents is preferably less than 20 times of TMAF. Especially, a concentration of DIW should be minimized because of the damages to the low-k materials.
  • DMAC dimethylacetamide
  • DIW de-ionized water
  • FIG. 1 shows a simplified schematic drawing of an apparatus use for removing residues according to the present invention.
  • 1 is a carbon dioxide cylinder
  • 2 is a high pressure pump for carbon dioxide
  • 3 is a storage tank of cleaning reagents
  • 4 is a pump for cleaning reagents
  • 5 is a valve
  • 6 is a storage tank for rinse reagents
  • 7 is a pump for rinse reagents
  • 8 is a valve
  • 9 is a high pressure vessel
  • 10 is a thermostat.
  • the microstructures for example, semiconductor wafer having residues on its surface is introduced to and placed in a high pressure vessel 9 , then carbon dioxide is supplied from a carbon dioxide cylinder 1 to the high pressure vessel 9 by a high pressure pump 2 .
  • the high pressure vessel 9 is thermostated at a specific temperature by a thermostat 10 in order to maintain the pressurized carbon dioxide in the high pressure vessel 9 at the supercritical condition.
  • High pressure vessel 9 can be replaced by that having heating unit.
  • Cleaning reagents are supplied to the high pressure vessel 9 from tanks 3 by high pressure pumps 4 . Cleaning step starts at the time when the cleaning reagents are fed from tank 3 to the high pressure vessel 9 .
  • the feed of the carbon dioxide and cleaning reagents may be continuous or batch-like.
  • the removing process is performed at a temperature in the range from 31° C. to 120° C., and at a pressure ranged from 5 M Pa to 30 M Pa, preferably, from 7.1 M Pa to 20 M Pa.
  • the time required for removing the residues depends on the size of the object, the kind and amount of the residues, which is usually in the range from a minute to several ten minutes.
  • a rinse step follows. Residues removed from surface during the cleaning step remains in the vessel 9 after the cleaning step finishes. If pure carbon dioxide is fed into such conditions, some portion of residues will deposit on the surface of the objects. Therefore, after the cleaning step, the first rinse step with the mixture of carbon dioxide and rinse agents is applied. After this first rinse step, the second rinse step with pure carbon dioxide is applied.
  • Preferable rinse agents used in the first rinse step are those that can remove liquid-like residues.
  • compounds having specific dielectric constant similar to water are effective for this purpose. Since the specific dielectric constant of water is 78 at 25° C. under atmospheric pressure, compounds having specific dielectric constant not smaller than 78 are used. The reason why the required specific dielectric constants are similar to that of water is that the liquid-like residues as byproducts of low-k etching have high polarity, resulting in the high affinity to the polar solvents.
  • the first rinse step can be done by stopping the feed of the cleaning reagents by the valve 5 , followed by feed of carbon dioxide and rinse reagents to the high pressure vessel 9 to get rid of the contents of vessel 9 .
  • a flow meter 12 may be used to control the flow rate.
  • Fluid evacuated from the cleaning step and the first rinse step can be recycled and reused by the separation into gaseous carbon dioxide and liquid fractions by a carbon dioxide recycle process, for example, including a liquid gas separator.
  • etch rate measurements of low-k films were carried out.
  • Low-k films were prepared on the silicon wafer by coating the materials consisting of organic silicon followed by heating and drying.
  • the film thickness of the low-k films was about 5000 ⁇ and k-value was in the range of 2 to 3.
  • a wafer coated by the low-k film was set into the high pressure vessel 9 .
  • carbon dioxide was introduced from carbon dioxide cylinder 1 through the pump 2 .
  • the temperature of the vessel 9 was maintained at 50° C. with a thermostat 10 and the pressure was controlled by the control valve 11 .
  • a rinse reagent used in the first rinse step was 0.5wt % of de-ionized water, 4.5 wt % of ethanol and 95 wt % of carbon dioxide.
  • TMAF Tetramethylammoniumfluoride
  • DMAC Dimethylacetamide
  • DIW de-ionized water
  • EG Ethyleneglycol
  • PG Propyleneglycol
  • EtOH Ethanol TABLE 1 Componets of remover Co- Addtional Etch Additive and inhibitor solvent solvents rate — CO 2 TMAF EG PG EtOH
  • DMAC DIW ⁇ /min 1 95 0.013 0 0 4.9 0.063 0.024 240 2 95 0.013 0.012 0 4.9 0.051 0.024 230 3 95 0.013 0 0.012 4.9 0.063 0.024 155 4 95 0.013 0 0.024 4.9 0.051 0.024 148 5 95 0.005 0 0 5.1 0.066 0 53 6 95 0.005 0 0.012 4.9 0.054 0 19 7 95 0.013 0 0 4.8 0.165 0 91 8 95 0.013 0 0.03 4.8
  • wafers coated by the low-k film were prepared. After line and space patterns (180 nm width) were processed by the lithography on the surface, ordinary etching by fluorocarbon gases and ashing by oxygen plasma. After one minute cleaning with cleaning reagents listed in the table 2 under the same condition as the example 1, five minute or ten minute of the first rinse step using components listed in table 2, followed by ten minutes of the second rinse step with a pure carbon dioxide.
  • the first rinse reagents used were 0.5 wt % of listed components, 4.5 wt % of ethanol and 95 wt % of carbon dioxide.
  • the imated wafer was taken and provided for the evaluation.
  • the cleaning performance was evaluated by the observation of a scanning electron microscope (SEM) with amplitude of 50000. The performance was checked both residues on the surface of the line and the liquid-like residues.
  • SEM scanning electron microscope
  • Amount of residues was less than 1 area % on the patterned side of the wafer.
  • TMAF Tetramethylammoniumfluoride
  • DMAC Dimethylacetamide
  • DIW de-ionized water
  • EG Ethyleneglycol
  • PG Propyleneglycol
  • EtOH Ethanol
  • the cleaning process described in the present invention According to the cleaning process described in the present invention, low-k materials that are easily damaged by the cleaning reagents could be protected by the use of the cleaning reagents including inhibitors such as polyhydric alcohols added into carbon dioxide. Besides, residues produced because of the damages of low-k materials by the cleaning reagents could be removed by a suitable selection of the rinse reagents. Therefore, the cleaning process described in the present invention provide one of the optimized cleaning processes applicable to the microstructure such as semiconductor wafers.

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  • Manufacturing & Machinery (AREA)
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  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Extraction Or Liquid Replacement (AREA)
US10/152,782 2002-05-23 2002-05-23 Process and composition for removing residues from the microstructure of an object Abandoned US20030217764A1 (en)

Priority Applications (16)

Application Number Priority Date Filing Date Title
US10/152,782 US20030217764A1 (en) 2002-05-23 2002-05-23 Process and composition for removing residues from the microstructure of an object
SG200402532A SG128463A1 (en) 2002-05-23 2003-05-19 Process and composition for removing residues fromthe microstructure of an object
CNB031378153A CN100499018C (zh) 2002-05-23 2003-05-21 用于从物体的微结构中清除残余物的方法和组合物
CNA2004100621728A CN1563315A (zh) 2002-05-23 2003-05-21 用于从物体的微结构中清除残余物的组合物
DE60306617T DE60306617T2 (de) 2002-05-23 2003-05-22 Verfahren und Zusammensetzung zum Entfernen von Rückständen von der Mikrostruktur eines Objektes
DE60304389T DE60304389T2 (de) 2002-05-23 2003-05-22 Prozess und Zusammensetzung für Rückstandentfernung von der Mikrostruktur eines Objekts
EP04010688A EP1453080B1 (en) 2002-05-23 2003-05-22 Process and composition for removing residues from the microstructure of an object
KR1020030032526A KR100562597B1 (ko) 2002-05-23 2003-05-22 물체의 미세구조로부터 잔류물을 제거하는 방법
AT03011130T ATE322740T1 (de) 2002-05-23 2003-05-22 Prozess und zusammensetzung für rückstandentfernung von der mikrostruktur eines objekts
TW093118357A TWI249573B (en) 2002-05-23 2003-05-22 Process and composition for removing residues from the microstructure of an object
TW092113865A TWI231824B (en) 2002-05-23 2003-05-22 Process and composition for removing residues from the microstructure of an object
EP03011130A EP1365441B1 (en) 2002-05-23 2003-05-22 Process and composition for removing residues from the microstructure of an object
JP2003146503A JP4256722B2 (ja) 2002-05-23 2003-05-23 微細構造体の洗浄方法
US10/822,804 US7220714B2 (en) 2002-05-23 2004-04-13 Process and composition for removing residues from the microstructure of an object
KR1020040028938A KR100551864B1 (ko) 2002-05-23 2004-04-27 물체의 미세구조로부터 잔류물을 제거하는 조성물
JP2004249222A JP2005089746A (ja) 2002-05-23 2004-08-27 微細構造体の洗浄剤組成物

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Application Number Priority Date Filing Date Title
US10/152,782 US20030217764A1 (en) 2002-05-23 2002-05-23 Process and composition for removing residues from the microstructure of an object

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US10/822,804 Division US7220714B2 (en) 2002-05-23 2004-04-13 Process and composition for removing residues from the microstructure of an object

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US10/152,782 Abandoned US20030217764A1 (en) 2002-05-23 2002-05-23 Process and composition for removing residues from the microstructure of an object
US10/822,804 Expired - Lifetime US7220714B2 (en) 2002-05-23 2004-04-13 Process and composition for removing residues from the microstructure of an object

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US (2) US20030217764A1 (ja)
EP (2) EP1453080B1 (ja)
JP (2) JP4256722B2 (ja)
KR (2) KR100562597B1 (ja)
CN (2) CN1563315A (ja)
AT (1) ATE322740T1 (ja)
DE (2) DE60304389T2 (ja)
SG (1) SG128463A1 (ja)
TW (2) TWI231824B (ja)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030198895A1 (en) * 2002-03-04 2003-10-23 Toma Dorel Ioan Method of passivating of low dielectric materials in wafer processing
US20040018452A1 (en) * 2002-04-12 2004-01-29 Paul Schilling Method of treatment of porous dielectric films to reduce damage during cleaning
US20040035021A1 (en) * 2002-02-15 2004-02-26 Arena-Foster Chantal J. Drying resist with a solvent bath and supercritical CO2
US20040072706A1 (en) * 2002-03-22 2004-04-15 Arena-Foster Chantal J. Removal of contaminants using supercritical processing
US20040103922A1 (en) * 2001-12-03 2004-06-03 Yoichi Inoue Method of high pressure treatment
US20040142564A1 (en) * 1998-09-28 2004-07-22 Mullee William H. Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process
US20040177867A1 (en) * 2002-12-16 2004-09-16 Supercritical Systems, Inc. Tetra-organic ammonium fluoride and HF in supercritical fluid for photoresist and residue removal
US20040229449A1 (en) * 2000-04-25 2004-11-18 Biberger Maximilian A. Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
US20040231707A1 (en) * 2003-05-20 2004-11-25 Paul Schilling Decontamination of supercritical wafer processing equipment
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