DE60306617D1 - Prozess und Zusammensetzung für Rückstandentfernung von der Mikrostruktur eines Objekts - Google Patents

Prozess und Zusammensetzung für Rückstandentfernung von der Mikrostruktur eines Objekts

Info

Publication number
DE60306617D1
DE60306617D1 DE60306617T DE60306617T DE60306617D1 DE 60306617 D1 DE60306617 D1 DE 60306617D1 DE 60306617 T DE60306617 T DE 60306617T DE 60306617 T DE60306617 T DE 60306617T DE 60306617 D1 DE60306617 D1 DE 60306617D1
Authority
DE
Germany
Prior art keywords
microstructure
composition
residue removal
residues
inhibitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60306617T
Other languages
English (en)
Other versions
DE60306617T2 (de
Inventor
Darryl W Peters
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Products and Chemicals Inc
Original Assignee
Air Products and Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Publication of DE60306617D1 publication Critical patent/DE60306617D1/de
Application granted granted Critical
Publication of DE60306617T2 publication Critical patent/DE60306617T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Extraction Or Liquid Replacement (AREA)
DE60306617T 2002-05-23 2003-05-22 Verfahren und Zusammensetzung zum Entfernen von Rückständen von der Mikrostruktur eines Objektes Expired - Fee Related DE60306617T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/152,782 US20030217764A1 (en) 2002-05-23 2002-05-23 Process and composition for removing residues from the microstructure of an object
US152782 2002-05-23

Publications (2)

Publication Number Publication Date
DE60306617D1 true DE60306617D1 (de) 2006-08-17
DE60306617T2 DE60306617T2 (de) 2007-07-05

Family

ID=29400523

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60306617T Expired - Fee Related DE60306617T2 (de) 2002-05-23 2003-05-22 Verfahren und Zusammensetzung zum Entfernen von Rückständen von der Mikrostruktur eines Objektes
DE60304389T Expired - Lifetime DE60304389T2 (de) 2002-05-23 2003-05-22 Prozess und Zusammensetzung für Rückstandentfernung von der Mikrostruktur eines Objekts

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE60304389T Expired - Lifetime DE60304389T2 (de) 2002-05-23 2003-05-22 Prozess und Zusammensetzung für Rückstandentfernung von der Mikrostruktur eines Objekts

Country Status (9)

Country Link
US (2) US20030217764A1 (de)
EP (2) EP1365441B1 (de)
JP (2) JP4256722B2 (de)
KR (2) KR100562597B1 (de)
CN (2) CN100499018C (de)
AT (1) ATE322740T1 (de)
DE (2) DE60306617T2 (de)
SG (1) SG128463A1 (de)
TW (2) TWI231824B (de)

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US7270941B2 (en) * 2002-03-04 2007-09-18 Tokyo Electron Limited Method of passivating of low dielectric materials in wafer processing
JP4031440B2 (ja) * 2002-03-22 2008-01-09 東京エレクトロン株式会社 超臨界処理を用いる汚染物の除去
US7169540B2 (en) * 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
US20030217764A1 (en) * 2002-05-23 2003-11-27 Kaoru Masuda Process and composition for removing residues from the microstructure of an object
US7223352B2 (en) * 2002-10-31 2007-05-29 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal
US7011716B2 (en) * 2003-04-29 2006-03-14 Advanced Technology Materials, Inc. Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products
US20060019850A1 (en) * 2002-10-31 2006-01-26 Korzenski Michael B Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations
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US20050227482A1 (en) * 2004-03-24 2005-10-13 Korzenski Michael B Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers
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US20060081273A1 (en) * 2004-10-20 2006-04-20 Mcdermott Wayne T Dense fluid compositions and processes using same for article treatment and residue removal
US7550075B2 (en) * 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
US20060219268A1 (en) * 2005-03-30 2006-10-05 Gunilla Jacobson Neutralization of systemic poisoning in wafer processing
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US7314828B2 (en) * 2005-07-19 2008-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Repairing method for low-k dielectric materials
US8772214B2 (en) 2005-10-14 2014-07-08 Air Products And Chemicals, Inc. Aqueous cleaning composition for removing residues and method using same
JP4594252B2 (ja) * 2006-02-24 2010-12-08 大日本スクリーン製造株式会社 処理方法および剥離用組成物
WO2008143839A1 (en) * 2007-05-15 2008-11-27 Eco2 Plastics Method and system for removing pcbs from synthetic resin materials
KR101706987B1 (ko) * 2009-06-10 2017-02-15 주식회사 동진쎄미켐 유기절연막 박리액의 제조방법
US8101561B2 (en) * 2009-11-17 2012-01-24 Wai Mun Lee Composition and method for treating semiconductor substrate surface
JP2017026645A (ja) * 2013-12-03 2017-02-02 Jsr株式会社 レジスト除去剤およびレジスト除去方法
US9790454B2 (en) 2016-03-02 2017-10-17 The Procter & Gamble Company Compositions containing alkyl sulfates and/or alkoxylated alkyl sulfates and a solvent comprising a diol
US9896648B2 (en) 2016-03-02 2018-02-20 The Procter & Gamble Company Ethoxylated diols and compositions containing ethoxylated diols
US9840684B2 (en) 2016-03-02 2017-12-12 The Procter & Gamble Company Compositions containing alkyl sulfates and/or alkoxylated alkyl sulfates and a solvent comprising a diol
US9856440B2 (en) 2016-03-02 2018-01-02 The Procter & Gamble Company Compositions containing anionic surfactant and a solvent comprising butanediol
KR101966808B1 (ko) * 2016-09-30 2019-04-08 세메스 주식회사 기판 세정 조성물, 기판 처리 방법 및 기판 처리 장치
JP7284460B2 (ja) 2019-11-20 2023-05-31 日産化学株式会社 洗浄剤組成物の製造方法、洗浄剤組成物入り容器の製造方法及び洗浄剤組成物を容器に充填して保存する方法

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Also Published As

Publication number Publication date
DE60304389D1 (de) 2006-05-18
TWI249573B (en) 2006-02-21
ATE322740T1 (de) 2006-04-15
KR20040040425A (ko) 2004-05-12
US7220714B2 (en) 2007-05-22
US20030217764A1 (en) 2003-11-27
DE60304389T2 (de) 2007-02-01
TW200400258A (en) 2004-01-01
CN1563315A (zh) 2005-01-12
TWI231824B (en) 2005-05-01
KR100562597B1 (ko) 2006-03-17
CN100499018C (zh) 2009-06-10
EP1365441B1 (de) 2006-04-05
DE60306617T2 (de) 2007-07-05
KR100551864B1 (ko) 2006-02-13
KR20030091746A (ko) 2003-12-03
EP1453080A1 (de) 2004-09-01
CN1494954A (zh) 2004-05-12
JP2005089746A (ja) 2005-04-07
EP1365441A1 (de) 2003-11-26
EP1453080B1 (de) 2006-07-05
JP4256722B2 (ja) 2009-04-22
TW200424307A (en) 2004-11-16
SG128463A1 (en) 2007-01-30
JP2004047980A (ja) 2004-02-12
US20040192572A1 (en) 2004-09-30

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee