US20020098333A1 - Piezoceramic device - Google Patents

Piezoceramic device Download PDF

Info

Publication number
US20020098333A1
US20020098333A1 US09/736,266 US73626600A US2002098333A1 US 20020098333 A1 US20020098333 A1 US 20020098333A1 US 73626600 A US73626600 A US 73626600A US 2002098333 A1 US2002098333 A1 US 2002098333A1
Authority
US
United States
Prior art keywords
ceramic
cations
positions
partial pressure
perovskite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US09/736,266
Other languages
English (en)
Inventor
Adalbert Feltz
Sigrid Gansberger
Heinz Florian
Harald Kastl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Electronics AG
Original Assignee
Epcos AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epcos AG filed Critical Epcos AG
Assigned to EPCOS AG reassignment EPCOS AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FELTZ, ADALBERT, FLORIAN, HEINZ, GANSBERGER, SIGRID, KASTL, HARALD
Publication of US20020098333A1 publication Critical patent/US20020098333A1/en
Priority to US11/406,587 priority Critical patent/US7855488B2/en
Priority to US12/785,081 priority patent/US8209828B2/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H10N30/053—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes by integrally sintering piezoelectric or electrostrictive bodies and electrodes
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
    • C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
    • C04B35/491—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT
    • C04B35/493—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT containing also other lead compounds
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
    • C04B35/638—Removal thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/871—Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3227—Lanthanum oxide or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3281—Copper oxides, cuprates or oxide-forming salts thereof, e.g. CuO or Cu2O
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6562—Heating rate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6567—Treatment time
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658—Atmosphere during thermal treatment
    • C04B2235/6582—Hydrogen containing atmosphere
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658—Atmosphere during thermal treatment
    • C04B2235/6583—Oxygen containing atmosphere, e.g. with changing oxygen pressures
    • C04B2235/6584—Oxygen containing atmosphere, e.g. with changing oxygen pressures at an oxygen percentage below that of air
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658—Atmosphere during thermal treatment
    • C04B2235/6586—Processes characterised by the flow of gas
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658—Atmosphere during thermal treatment
    • C04B2235/6588—Water vapor containing atmospheres
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • C04B2235/721—Carbon content
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/76—Crystal structural characteristics, e.g. symmetry
    • C04B2235/768—Perovskite structure ABO3
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/77—Density
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
    • C04B2235/785—Submicron sized grains, i.e. from 0,1 to 1 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
    • C04B2235/786—Micrometer sized grains, i.e. from 1 to 100 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/345—Refractory metal oxides
    • C04B2237/346—Titania or titanates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/345—Refractory metal oxides
    • C04B2237/348—Zirconia, hafnia, zirconates or hafnates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y10T29/435—Solid dielectric type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49005—Acoustic transducer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/125—Deflectable by temperature change [e.g., thermostat element]
    • Y10T428/12507—More than two components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/252—Glass or ceramic [i.e., fired or glazed clay, cement, etc.] [porcelain, quartz, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Definitions

  • the present invention relates to a piezoceramic device and a method for manufacturing it wherein the device includes a stack of at least two ceramic layers and an electrode layer arranged between the two ceramic layers.
  • Such devices may comprise a plurality of layers and uses. For example, they may be used in: actuators for effecting a low-inertia mechanical vibration of comparably high force via application of a select control voltage; bending elements to effect a high mechanical vibration of less force via application of select control voltage; or production of high electrical voltages. Piezoceramic devices may serve to detect mechanical acoustic vibrations and/or serve in their production via implementation in relevant devicse.
  • the electrodes may comprise Ag/Pd in the molar ratio 70/30. At up to several hundred electrode layers, the piezoceramic devices are burdened with substantial costs.
  • the precious metal electrodes permit the elimination of thermal dispergers and binders as well as other organic additives used in the process of ceramic foil production.
  • organic components of screen printing-metal paste of the multilayer stacks are eliminated via air depolymerisation and oxydation such that a later sinter condensation at approximately 1100° C. to 1150° C. is made possible without damaging effects. Such effects may for example be effected by residual carbon which negatively influences the characteristics of the ceramics due to reduction reactions.
  • La 2 O 3 or Nd 2 O 3 doped Pb(Zr,Ti)O 3 ceramics are documentated in the literature, including by G. H. Haertling in the American Ceramic Society Bulletin (43(12), 113-118 (1964) and Journal of the American Ceramic Society 54, 1-11 (1971) as well as in Piezoelectric Ceramics , Academic Press, London and New York (1971) of B. jaffe, W. R. Cook and H. Jaffe. Additional discussion may be found in Y. Xu in Ferroelectric Materials and their Applications , Elsevier Science Publishers, Amsterdam (1991).
  • La 2 O 3 in particular Nd 2 O 3 —additives induce the production of cation vacancies in the Pb positions of the crystal structure and at the same time increase the tendency to act as donors, particularly at insufficient oxygen partial pressure, which can lead to a depression of the insulating resistance and a rise in the dielectrcial losses, i.e. the sensitivity of the ceramic towards reduction is increased.
  • the additives stabilize the tetragonal phase and the kinetics of the orientation of the domains in the field direction at the polarity, i.e. the electromechanical behavior of the “soft piezoceramic” is influenced positively by such additives.
  • All of these ceramics are based on Perovskite mixed crystal phases which, in combination with Ag/Pd internal electrodes, produce a relatively positive behavior for the purpose of a piezostack when the debindering (the removal of the binder or binders) and the sinter condensation is performed.
  • Piezoelectrical ceramic masses of the general composition (Pb 1 ⁇ x ⁇ y Sr x Na ⁇ M y ) a [(Nb b Y c Cr d Co e Sb ⁇ ) f Ti g Zr 1 ⁇ f ⁇ g ]O 3 are set out in U.S. Pat. No.
  • the publication DE 9700463 discloses the production of green foils for piezoceramic multilayer devices.
  • the green foils are based on a piezoceramic powder of the type PZT, to which a stochiometric surplus of a heterovalent rare earth metal (up to a content from 1 to 5 molar-%) and a stochiometric surplus of an additional 1-5 molar-% lead oxyde is added.
  • Ag + -ions from the area of Ag/Pd internal electrodes diffuse into the ceramic layers of the multilayer devices such that the heterovalent doping produced cation vacancies are occupied and accordingly result in a filled up Perovskite structure.
  • This structure may be: Pb 0,99 Ag 0,01 La 0,01 [Zr 0,30 Ti 0,36 (Ni 1 ⁇ 3 Nb 2 ⁇ 3 ) 0,34 ]O 3 or Pb 0,96 Ag 0,02 Nd 0,02 (Zr 0,54 , Ti 0,46 )O 3 .
  • a piezoceramic is produced with a comparatively high Curie temperature for applications of up to 150° C.
  • solidity between the Ag/Pd internal electrode (70/30) and the ceramic, as well as growth during the sintering, are positively influenced by building silver into the ceramic.
  • U.S. Pat. No. 5,233,260 discusses piezoactuators which are not produced in the tradiational monolithic manner. Rather, the ceramic layers are separately sintered and only then stacked and agglutinated. This production method is costly. Furthermore, these piezoactuators have the disadvantage that the glue used has a negative effect the electrical characteristics.
  • DE 19749858 C1 sets out the production of COG with internal electrodes formed of a ceramic mass with the general composition (Ba II 1 ⁇ y Pb y ) 6 ⁇ x Nd 8+2x/3 Ti 18 O 54 +z m-% TiO 2 +pm-% Glas at lower PbO content(0.6 ⁇ x ⁇ 2.1; 0 ⁇ y ⁇ 0.6, 0 ⁇ z ⁇ 5.5 and 3 ⁇ p ⁇ 10).
  • a sufficient elimination of the organic components by feeding steam into the nitrogen flux with ⁇ 10 ⁇ 2 Pa oxygen partial pressure at temperatures up to 680° C. and the sinter condensation at 1000° C. is reached by apt glass frit addititives.
  • An advantage of the present invention provides an alternative to the expensive Ag/Pd internal electrodes used in the related art. It is a further advantage to provide a substitution which does not oxidize and remains relatively stable during production. It is still a further advantage to provide a method which can be implemented to enable mass production at reasonable engineering effort and expense and with maximally replicable component characteristics.
  • the present invention encompasses all piezoceramic devices available in a monolithic multilayer formation, and in particular Perovskit ceramic. Modifications by mixed crystal formation via building in cations on the-A positions and/or substitution of the B-cations with suitable replacement cations or combinations thereof can be effected. Ceramic foil production techniques may be employed along with sintering techniques in the formation of the present invention. For example, screen printing can be used for making the copper or copper mixted internal electrodes.
  • Such piezoceramic multilayer devices can be realized for example as actuators by an apt process guide, by which the debindering of the green foil stacks is carried out by steam thereby avoiding the oxidation of the copper containing internal electrodes.
  • the following sinter condensation to a monolithic multilayer device can be carried out in an advantageous ways at about 1000° C., i.e. below the melting temperture of the copper.
  • a further advantage of the present invention may be found in that for a PZT ceramic mass, copper-containing internal electrodes are applied in place of the normally used Ag/Pd internal electrodes (70/30) on the basis of the multilayer foil technique, whereby the practically complete debindering can be successfully done before effecting the sinter condensation, and under inert conditions, in such a way that a lot of steam is supplied to the inert atmosphere during the debindering thereby permitting only a set oxygen partial pressure, and hence leaving the copper containing internal electrodes relatively intact. Accordingly, by the present method, piezoactuators are created which have the same if not superior quality to those currently available. Likewise, the presence of the copper electrodes do not have any deliterious effects on the piezoactuators.
  • a preferred step in the present method includes a step wherein cations are built in on A-positions of the ceramic and at which cations on B-positions are replaced by apt other cations or combinations of cations.
  • bivalent metal cations M II may be built on A-positions of the ceramic. These can be selected for example from a group of elements, which contain barium, strontium, calcium, copper and bismuth. Bivalent metal cations M II from a group of elements including scandium, yttrium, lantanum or from group of lanthanides can be considered for the A-positions of the ceramic.
  • monovalent cations can be built in on the A-positions of the ceramic, which are selected advantegously and from a group of elements which contains silver, copper, sodium and potassium.
  • monovalent cations M II and monovalent cations can be built in on A-positions.
  • a preferred embodiment includes the partial substitution of the quadrivalent cations Zr and Ti on the B-positions of the ferroelectrical Perovskite ceramic.
  • Still a further advantage includes the composition of the ceramic with the general formula
  • the invention includes the realization that the by donors, e.g. a rare earth metal doped piezo ceramic on the basis of PZT, because of the formation of cation vacancies on the A-positions of the Perovskit structure, e.g. according to the composition Pb II 0,97 Nd III 0,02 V′′Pb,0,01( Zr 0,54 Ti 0,46) O 3 (V′′ meaning an empty space), develops a certain affinity to absorb copper from the internal electrodes without destroying them by elimination of equivalent PbO-shares, whereby the latter combination acts as a sinter aid and up to some percentage of PbO is separately added to the ceramic anyway.
  • donors e.g. a rare earth metal doped piezo ceramic on the basis of PZT
  • V′′ meaning an empty space
  • the sinter condensation is supported by the known mobility of the copper ions and leads, by the copper migration, to a solid adhesion between the electrode layer and ceramic such that delaminations can be effectively avoided.
  • FIG. 1 depicts temperature control during debindering and sintering
  • FIGS. 2 a and 2 b depict a partial cross section of a multilayer stack with alternating sequence of PZT ceramic foils and Cu-internal electrodes;
  • FIGS. 3 a and 3 b depict a measuring curve of copper content of piezoceramic layer and a section view of the piezoceramic layer;
  • FIG. 4 depicts a diagram of an excursion curve for a polarized PZT-piezoactuator with Cu-internal electrodes
  • FIG. 5 depicts a calculation of thermodynamic data as curves for different H 2 /H 2 O concentrations.
  • a piezoceramic Perovskite-mixed crystal phase is built according to the following steps: TiO 2 , ZrO 2 (each may be from a mixed precipitation produced precursor (Zr, Ti)O 2 ) and PbCo 3 (e.g. Pb 3 O 4 and dopants like La 2 O 3 or from another oxyde of the rare earth metals) and if necessary an additive of CuO based raw material mixture is set in its composition on the morphotropic phase interface with a PbO-surplus of maximally 5% to support the sinter condensation; for even distribution, the component undergoes a grinding step in diluted suspension and is calcinated after the filtering; and drying occurs at 900 to 950° C.
  • the finely ground powder is suspended in a diluted slip with approx. 70 m-% solid substance content by use of a disperger, thus corresponding to approximately 24 vol.-%.
  • the optimal dispersing dispergator portion is separately determined in a series of tests, which can be recognized by obtaining a certain viscosity minium.
  • approximately 6 m-% of a commercial binder is added to the dispersed suspended solids, which is thermohydrolytically degradable. Accordingly, a diluted polyurethane dispersion has been shown to have advantage effects. It is mixed in a disperse mill and accordingly provided for the process of “foil-pulling” (in particular for the production of a spraying granular apt slip).
  • Compact green discoids produced from the granular) or small square multilayer printed boards (“MLP” produced by stacking and laminating 40 to 50 ⁇ m thick green foils without print and with Cu-electrode paste) can be debindered up to a residue carbon content of 300 ppm in a H 2 O-steam containg inert atmosphere at a defined oxygen partial pressure, which fulfills the condition of the coexistency of PbO and in particular Bi 2 O 3 -containing piezoceramic and copper.
  • MLP small square multilayer printed boards
  • the hydrolytical separation of the binder takes place primarily at a low temperature of 200 ⁇ 50° C. and at a steam partial pressure larger than 200 mbar.
  • the oxygen partial pressure is set to a value which is well-tolerated by the copper containing electrodes. This is done by gettering the oxygen from the flow of gas at surfaces of Cu or by adding H 2 .
  • the flow of gas avoids damage to the ceramic.
  • the electrode layers support the debindering, because preferred paths for a binder transportation is created by them, there is still a considerable debindering time necessary, particularly for the actuators with 160 electrodes (measurements 9,8*9,8* 12,7 mm 3 ).
  • the invention enables herewith the production of actuators with more than 100 internal electrodes, which has the advantage of a highly obtainable actuator-excursion.
  • Examples for a debindering control are found in table 1 by indicating the residue carbon content of the obtained devices.
  • the dew point for steam of both debindering programs lies at 75° C., the partial pressure of the steam corresponds to 405 mbar.
  • FIG. 1 shows the temperature control during the debindering and sintering.
  • the steam partial pressure supplied with the nitrogen flux corresponding to a dew point of 75° C. is indicated as well.
  • the sinter condensation is effected at 1000° C. without creating a reductive degradation of the ceramic.
  • the dielectrical and especially the piezoelectrical characteristics of the obtained samples with the measurements of approximately 10.10 mm 2 and 0,7 (in particular 2 mm consistency) are measured after contacting by sputtering of Au-electrodes and compared with the air-debindered (sintered at 1130° C.) samples of the same geometry.
  • Table 4 depicts effective piezoelectrical coupling factors of the MLP samples from table 3 for two fundamental vibrations, determined from the measurement of each 3 MLP samples, sintered under the indicated conditions (a), (b), (c) and (d) in table 2, Planar vibration Consistency mode of vibration MLP f S/kHz f p/KHz k eff f S/kHz f p/KHz k eff (a) 158 ⁇ 1 191 ⁇ 2 0.56 ⁇ 0.01 3292 ⁇ 15 3848 ⁇ 79 0.52 ⁇ 0.03 (b) 166 ⁇ 2 198 ⁇ 4 0.54 ⁇ 0.01 2900 ⁇ 78 3197 ⁇ 25 0.42 ⁇ 0.05 (c) 163 ⁇ 1 189 ⁇ 5 0.51 ⁇ 0.04 2830 ⁇ 111 3100 ⁇ 108 0.40 ⁇ 0.02 (d) 154 ⁇ 2 186 ⁇ 2 0.56 ⁇ 0.03 2668 ⁇ 36 3048 ⁇ 47 0.48 ⁇ 0.03
  • Electromechanical coupling factors which are in the area of the air-sintered samples are accrued from the produced samples sintered commonly under these conditions with copper.
  • the results of an excursion measurement on ceramic samples MLP are listed in table 5.
  • the excursion ⁇ h was determined parallely to the polarized direction 3, in which the measuring voltage was set.
  • the excursion measurement was carried out by inductive path measuring by setting up an electrical field E with a field strength of 2000 V/mm. Prior to this measurement, the samples were impinged by a field strength of 2000 V/mm in the polarized direction to rule out after-polarity effects and increased hysteresis because of the bedding after the polarity.
  • d 33 is a geometrically independent value for the piezoelectrical large signal characteristics of the examined ceramic.
  • Table 5 sets out an excursion measurement of square ceramic samples ML: (edge length 1, consistency h) with the composition according table 2 by setting a voltage of 2kV/mm. Electrical measurement voltage U, excursion ⁇ h, and the piezoelectrical constant d 33 are indicated.
  • a Cu-screen print paste which has a metal content as high as possible of approx. 75 m-% and is processed with a special high-polymer and is thereby a very viscous binder (which produces at already ⁇ 2 m-%, related to the solid susbstance content, a viscosity as thixotrope as possible, preferably >2000 mPa*s).
  • multilayer samples “VS” with up to 20 internal electrodes are produced for sampling purposes.
  • piezostacks with 100 to 300 Cu-internal electrodes are built up in a second step and are debindered and sintered under the above mentioned conditions of a defined oxygen partial pressure in the presence of steam.
  • the piezoceramic green foils are produced in a consistency, which produces, by considering the linear shrinkage during the sintering of typically 15%, a piezoceramic consistency from 20 to 200 ⁇ mm.
  • the Cu-electrodes have a layer consistency from 1 to 3 ⁇ m after the sintering.
  • FIG. 2 a and 2 b depict a schematic cross section of a multilayer stack with an alternating sequence of PZT ceramic foils and Cu-internal electrodes in 500 times (FIG. 2 a ) and in 1000 times (FIG. 2 b ) enlargement.
  • the green foils produced according to the method of the consistency from 40 to 50 ⁇ m are further processed according to the multilayer ceramic condensators method.
  • the printing of the square cut PZT ceramic foils is done mechanically by screen printing technique (400 mesh) with the piezo actuators common electrode design by usage of a commercial Cu-electrode paste.
  • the stacking is done such that on every two non-printed foils a printed one follows. 100 piezo actuators in a green condition are received from the block, after laminating, and pressing or sawing.
  • the debindering is carried out according to the FIG. 1 shown temperature time diagram in nitrogen stream by adding steam and hydrogen so that there is a target value from 5*10 ⁇ 2 to 2*10 ⁇ 1 Pa for the O 2 partial pressure produced in the area of 500° C. Essentially, lower oxygen partial pressures occur locally during the debindering.
  • the ceramic is not subject to the reductive degradation in the temperature area of the debindering, because the equilibrated oxygen partial pressure is lowered as well, conditioned thermodynamically, and the reduction processes are kinetically sufficiently obstructed.
  • the green parts of the multilayer piezo actuators still show a residue content of carbon of 300 ppm after the debindering and are afterwards ready to be sintered in the same set atmosphere without causing a reductive degradation which lead to cracking, delamination and eventually to drifting of the internal electrodes because of the production of a low melting Cu/Pb-alloy.
  • [0063] is used for setting a certain oxygen partial pressure.
  • K D p ⁇ ( O 2 ) 1 2 ⁇ p ⁇ ( H 2 ) p ⁇ ( H 2 ⁇ O )
  • thermodynamic data a certain oxygen partial pressure is thereby determined at a given temperature for a defined partial pressure ratio of steam and hydrogen.
  • the calculation of the thermodynamic data produces the data depicted in FIG. 5, namely the curves for different H 2 /H 2 O ratios of concentration.
  • the gas composition is selected in such a way, that the requested oxygen partial pressure is produced at sinter temperature T Sinter .
  • T Sinter sinter temperature
  • This condition is for example depicted in FIG. 5.
  • the p(O 2 ) runs parallel to the other curves with decreasing temperature.
  • the p(O 2 ) value is low for T ⁇ T Sinter , which is still tolerable if needed.
  • the gas control curve Cu1 according to table 7 corresponds to this process.
  • the equilibrium of Pb/PbO falls short starting at approx. 900° C., conditioned by the narrow thermodynamic window through which metallic lead is produced if there is sufficient kinetic activity.
  • FIG. 5 shows the calculated course of the partial pressure for the different ratios of concentration of the gases.
  • the sinter profile is as follows: the holding time at maximal temperature lies between 2 and 12 hours.
  • the heating up ramp and the cooling down ramp are effected at 5 K/min; and the actuators are slowly heated up at 1 K/min.
  • the in steps adjusted set-up of the oxygen partial pressure (FIG. 5) runs in conformity with the temperature curve, which is obtained by an alteration of the forming gas flow meter. Thereby, the steam partial pressure (100 g/h) is constant.
  • the obtained ceramic is tightly sintered to >96% and shows mostly homogenous low porosity.
  • the sinter grains grow according to the piezoelectrical characteristics with an advantageous medium grain size of 0.8-5 ⁇ m. Intact and crack-free actuators are obtained.
  • the sequence of the internal electrodes and PZT ceramic layers is shown in a section in FIGS. 2 a and 2 b .
  • the piezo actuators are ground and polished for the finishing and contacted in the area of the exiting internal electrodes according to applications common to Cu-paste and burned-in at 935° C. according to a preset temperature time curve.
  • the piezo actuators respond to the electrical measuring after the application of wires by known Bond technology.
  • FIG. 4 The diagram of a vibration curve for a polarized PZT-piezoactuator with 160 Cu-internal electrodes is depicted in FIG. 4. A density of 0,123% is produced by a voltage setting of 140,6 Volt at a consistency of 70 ⁇ m of the PZT ceramic layers. The piezoelectrical coefficient in direction to the applied field d 33 is 614,6 10 ⁇ 12 m/V.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Composite Materials (AREA)
  • Inorganic Chemistry (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Laminated Bodies (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
US09/736,266 1999-12-16 2000-12-15 Piezoceramic device Abandoned US20020098333A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US11/406,587 US7855488B2 (en) 1999-12-16 2006-04-19 Piezoceramic device
US12/785,081 US8209828B2 (en) 1999-12-16 2010-05-21 Method for making a piezoceramic device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19960849 1999-12-16
DE19960849. 1999-12-16

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/406,587 Continuation US7855488B2 (en) 1999-12-16 2006-04-19 Piezoceramic device

Publications (1)

Publication Number Publication Date
US20020098333A1 true US20020098333A1 (en) 2002-07-25

Family

ID=7932991

Family Applications (3)

Application Number Title Priority Date Filing Date
US09/736,266 Abandoned US20020098333A1 (en) 1999-12-16 2000-12-15 Piezoceramic device
US11/406,587 Expired - Fee Related US7855488B2 (en) 1999-12-16 2006-04-19 Piezoceramic device
US12/785,081 Expired - Fee Related US8209828B2 (en) 1999-12-16 2010-05-21 Method for making a piezoceramic device

Family Applications After (2)

Application Number Title Priority Date Filing Date
US11/406,587 Expired - Fee Related US7855488B2 (en) 1999-12-16 2006-04-19 Piezoceramic device
US12/785,081 Expired - Fee Related US8209828B2 (en) 1999-12-16 2010-05-21 Method for making a piezoceramic device

Country Status (9)

Country Link
US (3) US20020098333A1 (enExample)
EP (2) EP2278634A3 (enExample)
JP (2) JP4744052B2 (enExample)
CN (1) CN1246914C (enExample)
AT (1) ATE481743T1 (enExample)
AU (1) AU2830701A (enExample)
BR (1) BR0016390A (enExample)
DE (3) DE10062672B9 (enExample)
WO (1) WO2001045138A2 (enExample)

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030188820A1 (en) * 2002-04-05 2003-10-09 Eturo Yasuda Method for producing stacked ceramic body
US20040050477A1 (en) * 2000-12-28 2004-03-18 Denso Corporation Laminate-type dielectric device,a production method and an electrode paste material
US20040129919A1 (en) * 2002-07-25 2004-07-08 Katsuhiro Horikawa Manufacturing method for monolithic piezoelectric part, and monolithic piezoelectric part
US6936301B2 (en) * 2002-05-06 2005-08-30 North Carolina State University Methods of controlling oxygen partial pressure during annealing of a perovskite dielectric layer
EP1580820A1 (en) * 2004-03-26 2005-09-28 TDK Corporation Method of manufacturing multilayer ceramic device
US20060119228A1 (en) * 2002-10-25 2006-06-08 Heinz Florian Piezoelectric component
US7063813B1 (en) 2001-12-14 2006-06-20 Denso Corporation Stacked ceramic body and production method thereof
US20060145571A1 (en) * 2002-09-27 2006-07-06 Alexander Glazunov Piezoelectric transformer provided with internal copper electrodes
US20060234020A1 (en) * 2002-02-13 2006-10-19 Peter Sedlmaier Ceramic multilayer component, method for the production thereof and retaining device
US20060251911A1 (en) * 1999-12-16 2006-11-09 Epcos Ag Piezoceramic device
US20060279178A1 (en) * 2003-05-13 2006-12-14 Xiaobing Ren Piezoelectric material, manufacturing method thereof, and non-linear piezoelectric element
US20070080317A1 (en) * 2005-10-04 2007-04-12 Tdk Corporation Piezoelectric ceramic composition and laminated piezoelectric element
US20070206341A1 (en) * 2003-09-30 2007-09-06 Epcos Ag Ceramic Multi-Layer Component And Method For The Production Thereof
US20070216264A1 (en) * 2006-03-20 2007-09-20 Tdk Corporation Multilayer piezoelectric element
US20070267948A1 (en) * 2003-09-30 2007-11-22 Adalbert Feltz Piezoelectric Ceramic Material Multi-Layered Component and Method for the Production of a Ceramic Material
US20080057798A1 (en) * 2004-04-26 2008-03-06 Heinz Florian Electrical Functional Unit and Method for its Production
US20080074004A1 (en) * 2005-06-03 2008-03-27 Murata Manufacturing Co., Ltd. Piezoelectric device
US20080231147A1 (en) * 2005-12-08 2008-09-25 Murata Manufacturing Co., Ltd. Laminated piezoelectric element and process for producing the same
US20080245991A1 (en) * 2005-12-22 2008-10-09 Francois Bamiere Nickel-Molybdenum-Doped Lead Zirconate Titanate, Method for the Production of a Piezoceramic Component Using Said Lead Zirconate Titanate, and Use of the Piezoceramic Component
US20090236945A1 (en) * 2006-12-06 2009-09-24 Murata Manufacturing Co., Ltd. Monolithic piezoelectric element and method for manufacturing the same
US20090243441A1 (en) * 2005-01-26 2009-10-01 Epcos Ag Piezoelectric Component
US20180033950A1 (en) * 2015-02-16 2018-02-01 Mitsubishi Materials Corporation Piezoelectric ptzt film, and process for producing liquid composition for forming said piezoelectric film
US20210305484A1 (en) * 2020-03-27 2021-09-30 Tdk Corporation Piezoelectric element, piezoelectric actuator, and piezoelectric transformer

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE20022469U1 (de) * 2000-07-11 2002-01-31 Robert Bosch Gmbh, 70469 Stuttgart Gesinterter, elektrisch leitfähiger Werkstoff
JP2002261345A (ja) * 2000-12-28 2002-09-13 Denso Corp 積層一体焼成型の電気機械変換素子
DE10227509A1 (de) * 2002-04-22 2003-11-06 Elliptec Resonant Actuator Ag Piezomotor
DE10141820A1 (de) * 2001-08-27 2003-03-20 Elliptec Resonant Actuator Ag Piezomotor mit Kupferelektroden
DE10146704A1 (de) * 2001-09-21 2003-04-10 Elliptec Resonant Actuator Ag Piezomotoren mit Piezoelementen, hergestellt nach dem Keramikkondensatorverfahren
JP4590868B2 (ja) * 2003-02-12 2010-12-01 株式会社デンソー 積層型圧電体素子及びその製造方法
DE10326040A1 (de) 2003-06-10 2004-12-30 Robert Bosch Gmbh Verfahren zur Herstellung von keramischen Grünfolien für keramische Bauteile
US7713896B2 (en) 2004-04-14 2010-05-11 Robert Bosch Gmbh Method for producing ceramic green compacts for ceramic components
JP2006196717A (ja) * 2005-01-14 2006-07-27 Nec Tokin Corp 積層型圧電セラミックス素子およびその製造方法
JP3923064B2 (ja) * 2005-03-25 2007-05-30 Ｔｄｋ株式会社 積層型圧電素子及びその製造方法
JP2007230839A (ja) * 2006-03-02 2007-09-13 Tdk Corp 圧電磁器組成物、積層型圧電素子及びその製造方法
JP4711083B2 (ja) * 2006-12-27 2011-06-29 Ｔｄｋ株式会社 積層型圧電素子
DE102007029601A1 (de) * 2007-06-27 2009-01-02 Siemens Ag Bleizirkonattitanat mit Eisen-Niob-Wolfram-Dotierung, Verfahren zum Herstellen eines piezokeramischen Bauteils unter Verwendung des Bleizirkonattitanats und Verwendung des piezokeramischen Bauteils
DE102007029600A1 (de) * 2007-06-27 2009-01-02 Siemens Ag Bleizirkonattitanat mit Scandium-Wolfram-Dotierung, Verfahren zum Herstellen eines piezokeramischen Bauteils unter Verwendung des Bleizirkonattitanats und Verwendung des piezokeramischen Bauteils
DE102007029613A1 (de) * 2007-06-27 2009-01-02 Siemens Ag Bleizirkonattitanat mit Nickel-Wolfram-Dotierung, Verfahren zum Herstellen eines piezokeramischen Bauteils unter Verwendung des Bleizirkonattitanats und Verwendung des piezokeramischen Bauteils
DE102007037554A1 (de) 2007-08-09 2009-02-12 Robert Bosch Gmbh Piezoelektrischer Aktor
DE102009047512A1 (de) 2009-04-09 2010-10-14 Robert Bosch Gmbh Aktormodul und Brennstoffeinspritzventil
DE102009002304A1 (de) 2009-04-09 2010-10-14 Robert Bosch Gmbh Piezoelektrischer Aktor und Verfahren zur Herstellung eines piezoelektrischen Aktors
DE102010062112A1 (de) 2010-04-16 2011-10-20 Robert Bosch Gmbh Verfahren zum Heißpolarisieren eines piezokeramischen Bauelements
DE102010027845A1 (de) 2010-04-16 2011-10-20 Robert Bosch Gmbh Piezoelektrischer Aktor
DE102010030206A1 (de) 2010-06-17 2011-12-22 Robert Bosch Gmbh Messverfahren für einen thermischen Prozess
DE102011003078A1 (de) 2011-01-25 2012-07-26 Robert Bosch Gmbh Sinterhilfsmittel zum Aufnehmen von Bauteilen und Verfahren zum Sintern von Bauteilen
DE102011003079B4 (de) 2011-01-25 2021-01-07 Robert Bosch Gmbh Verfahren zum Sintern von Bauteilen
DE102011077263A1 (de) 2011-06-09 2012-12-13 Robert Bosch Gmbh Piezoelektrischer Aktor und Verfahren zur Herstellung eines piezoelektrischen Aktors
DE102011112008B4 (de) * 2011-08-30 2018-01-11 Epcos Ag Piezoelektrisches Bauelement und Verfahren zur Herstellung eines piezoelektrischen Bauelements
DE102011117709A1 (de) 2011-11-04 2013-05-08 Epcos Ag Keramikmaterial, Verfahren zur Herstellung desselben und elektrokeramisches Bauelement umfassend das Keramikmaterial
US9293256B2 (en) 2012-04-10 2016-03-22 Epcos Ag Ceramic material and capacitor comprising the ceramic material
DE102012104033B9 (de) 2012-05-08 2025-02-06 Tdk Electronics Ag Keramischer Vielschichtkondensator
US9511393B2 (en) * 2012-08-17 2016-12-06 The Boeing Company Flexible ultrasound inspection system
US20140339458A1 (en) * 2013-05-14 2014-11-20 Tdk Corporation Piezoelectric ceramic and piezoelectric device containing the same
US9324931B2 (en) 2013-05-14 2016-04-26 Tdk Corporation Piezoelectric device
DE102018125341A1 (de) * 2018-10-12 2020-04-16 Tdk Electronics Ag Piezoelektrisches Vielschichtbauelement und Verfahren zur Herstellung eines piezoelektrischen Vielschichtbauelements
CN111302798B (zh) * 2020-02-25 2022-02-22 西安工业大学 一种氧化镧掺杂改性的铌酸钾钠基透明陶瓷及其制备方法
DE102020116805A1 (de) * 2020-06-25 2021-12-30 Heraeus Deutschland GmbH & Co. KG Sinterverfahren für elektrische Durchführungen
CN112864305A (zh) * 2020-12-24 2021-05-28 广东奥迪威传感科技股份有限公司 一种压电执行器
CN116615399B (zh) * 2021-01-28 2025-03-21 基美电子公司 介电陶瓷组合物和使用该介电陶瓷组合物的陶瓷电容器
CN118063212B (zh) * 2024-01-26 2024-11-08 湖南省美程陶瓷科技有限公司 一种锆钛酸铅压电陶瓷材料及其制备方法
US20250295035A1 (en) * 2024-03-13 2025-09-18 Joseph V. Mantese Piezoelectric structure

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5112433A (en) * 1988-12-09 1992-05-12 Battelle Memorial Institute Process for producing sub-micron ceramic powders of perovskite compounds with controlled stoichiometry and particle size
US6080328A (en) * 1998-04-13 2000-06-27 Murata Manufacturing Piezoelectric ceramic and method for producing piezoelectric ceramic element
US6236146B1 (en) * 1996-11-12 2001-05-22 Siemens Aktiengesellschaft Piezoelectric actuator with a new type of contacting and a method for the production thereof
US6255037B1 (en) * 1996-04-26 2001-07-03 Murata Manufacturing Co., Ltd. Method for producing monolithic electronic parts
US6320738B1 (en) * 1999-10-28 2001-11-20 Murata Manufacturing Co., Ltd. Monolithic ceramic electronic component and method for making the same

Family Cites Families (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4189760A (en) * 1973-05-13 1980-02-19 Erie Technological Products, Inc. Monolithic capacitor with non-noble metal electrodes and method of making the same
US3809973A (en) * 1973-07-06 1974-05-07 Sprague Electric Co Multilayer ceramic capacitor and method of terminating
US4063341A (en) * 1975-07-09 1977-12-20 E. I. Du Pont De Nemours And Company Process for making multilayer capacitors
JPS5946112B2 (ja) 1975-12-29 1984-11-10 三菱油化株式会社 アツデンザイリヨウ
US4078284A (en) * 1977-04-04 1978-03-14 Zenith Radio Corporation Piezoelectric substrate fabrication process
JPS6047753B2 (ja) 1978-06-01 1985-10-23 日本特殊陶業株式会社 圧電性高分子複合材料
JPS5817143B2 (ja) * 1979-02-22 1983-04-05 鳴海製陶株式会社 セラミツクテ−プの製造方法
US4347167A (en) * 1980-10-01 1982-08-31 University Of Illinois Foundation Fine-grain semiconducting ceramic compositions
JPS6287456A (ja) * 1985-10-11 1987-04-21 日本碍子株式会社 誘電体磁器用セラミツク組成物
US4988909A (en) * 1989-01-20 1991-01-29 Mitsui Toatsu Chemicals, Inc. Piezoelectric element with giant electrostrictive effect and ceramic composition for preparing same
JPH0666219B2 (ja) * 1989-02-22 1994-08-24 株式会社村田製作所 積層セラミックスコンデンサ
JP2615977B2 (ja) * 1989-02-23 1997-06-04 松下電器産業株式会社 誘電体磁器組成物およびこれを用いた積層セラミックコンデンサとその製造方法
US5014158A (en) * 1989-04-11 1991-05-07 Matsushita Electric Industrial Co., Ltd. Laminated ceramic capacitor
US5163209A (en) * 1989-04-26 1992-11-17 Hitachi, Ltd. Method of manufacturing a stack-type piezoelectric element
JPH02303078A (ja) * 1989-05-17 1990-12-17 Murata Mfg Co Ltd 圧電性磁器組成物
JP2881424B2 (ja) 1989-07-25 1999-04-12 京セラ株式会社 圧電磁器
JP2536671B2 (ja) * 1990-07-09 1996-09-18 株式会社村田製作所 圧電性磁器の製造方法
US5210455A (en) * 1990-07-26 1993-05-11 Ngk Insulators, Ltd. Piezoelectric/electrostrictive actuator having ceramic substrate having recess defining thin-walled portion
JPH04171990A (ja) * 1990-11-06 1992-06-19 Toto Ltd 圧電セラミック焼結体
JPH04324687A (ja) * 1991-04-24 1992-11-13 Onoda Cement Co Ltd 卑金属電極材料
JPH05190376A (ja) * 1991-07-19 1993-07-30 Toshiba Corp セラミックコンデンサ
US5335139A (en) * 1992-07-13 1994-08-02 Tdk Corporation Multilayer ceramic chip capacitor
US5390949A (en) * 1993-03-08 1995-02-21 The University Of Toledo Active suspension systems and components using piezoelectric sensing and actuation devices
JP3151644B2 (ja) * 1993-03-08 2001-04-03 日本碍子株式会社 圧電／電歪膜型素子
US5340510A (en) * 1993-04-05 1994-08-23 Materials Systems Incorporated Method for making piezoelectric ceramic/polymer composite transducers
US5433917A (en) * 1993-09-16 1995-07-18 The Penn State Research Foundation PZT ceramic compositions having reduced sintering temperatures and process for producing same
DE4332831C1 (de) * 1993-09-27 1994-10-06 Fraunhofer Ges Forschung Formkörper auf der Basis von PZT (Pb(Zr,Ti)O¶3¶, Bleizirkonat-Bleititanat), Verfahren und Zwischenprodukt zu deren Herstellung
JPH07277822A (ja) 1994-04-11 1995-10-24 Matsushita Electric Ind Co Ltd 圧電素子材料及びその製造方法
JPH0826824A (ja) * 1994-07-08 1996-01-30 Matsushita Electric Ind Co Ltd 圧電磁器組成物およびその製造方法
JPH08167536A (ja) * 1994-12-14 1996-06-25 Tdk Corp 銅内部電極積層セラミックコンデンサの製造方法
US5648012A (en) 1994-12-22 1997-07-15 Kyocera Corporation Piezoelectric ceramic composition
JP3266483B2 (ja) * 1995-11-30 2002-03-18 京セラ株式会社 圧電磁器組成物
JP2570644B2 (ja) * 1994-12-26 1997-01-08 日本電気株式会社 圧電セラミックス
JPH08301654A (ja) * 1995-05-10 1996-11-19 Matsushita Electric Ind Co Ltd 圧電磁器組成物及びその製造方法
DE19615694C1 (de) * 1996-04-19 1997-07-03 Siemens Ag Monolithischer Vielschicht-Piezoaktor und Verfahren zur Herstellung
DE19615695C1 (de) * 1996-04-19 1997-07-03 Siemens Ag Verfahren zur Herstellung eines Piezoaktors monolithischer Vielschichtbauweise
JPH1017364A (ja) * 1996-06-28 1998-01-20 Kyocera Corp 圧電磁器組成物
DE19700463A1 (de) 1997-01-09 1998-07-16 Robel Georg Gmbh & Co Schienenverfahrbarer Wagen zum Abziehen langverschweißter Schienen von Transportwagen
JPH1149572A (ja) * 1997-08-01 1999-02-23 Honda Motor Co Ltd セラミックス複合粒子及びその製造方法
JP3831537B2 (ja) 1997-10-27 2006-10-11 Ｔｄｋ株式会社 電子デバイスおよびその製造方法
DE19749858C1 (de) * 1997-11-11 1999-04-22 Siemens Matsushita Components Reduktionsstabile Keramikmassen, Verfahren zur Herstellung und Verwendung
JP3538700B2 (ja) 1998-02-23 2004-06-14 株式会社村田製作所 抵抗材料、これを用いた抵抗ペーストおよび抵抗体、ならびにセラミック多層基板
JP3955389B2 (ja) 1998-05-12 2007-08-08 松下電器産業株式会社 コンデンサ内蔵基板およびその製造方法
US6266230B1 (en) 1998-06-29 2001-07-24 Matsushita Electric Industrial Co., Ltd. Multilayer ceramic capacitor
DE19841487C2 (de) * 1998-09-10 2002-03-14 Epcos Ag Reduktionsstabile Keramikmasse und ihre Verwendung
US6182340B1 (en) * 1998-10-23 2001-02-06 Face International Corp. Method of manufacturing a co-fired flextensional piezoelectric transformer
DE19860001C2 (de) 1998-12-23 2001-10-04 Epcos Ag Piezoelektrisches Bauelement, Verfahren zu dessen Herstellung und Verwendung eines derartigen Bauelements
JP3596743B2 (ja) * 1999-08-19 2004-12-02 株式会社村田製作所 積層セラミック電子部品の製造方法及び積層セラミック電子部品
DE19946834A1 (de) * 1999-09-30 2001-05-03 Bosch Gmbh Robert Piezoaktor und ein Verfahren zu dessen Herstellung
US6692598B1 (en) * 1999-10-18 2004-02-17 Murata Manufacturing Co. Ltd Method of producing ceramic green sheet and method of manufacturing multilayer ceramic electronic part
DE10062672B9 (de) * 1999-12-16 2012-07-12 Epcos Ag Piezoelektrisches Bauelement
DE10035172B4 (de) 2000-07-19 2004-09-16 Epcos Ag Keramikmasse und Kondensator mit der Keramikmasse
DE10201641A1 (de) * 2002-01-17 2003-08-07 Epcos Ag Piezoelektrisches Bauelement und Verfahren zu dessen Herstellung
DE10249900A1 (de) * 2002-10-25 2004-05-06 Epcos Ag Piezoelektrisches Bauelement
US7272876B2 (en) * 2002-11-05 2007-09-25 Nippon Soken, Inc. Method for fabricating laminate-type dielectric element
DE10307825A1 (de) * 2003-02-24 2004-09-09 Epcos Ag Elektrisches Vielschichtbauelement und Schichtstapel
US7713896B2 (en) * 2004-04-14 2010-05-11 Robert Bosch Gmbh Method for producing ceramic green compacts for ceramic components
ATE441215T1 (de) * 2005-07-26 2009-09-15 Siemens Ag Monolithischer piezoaktor mit drehung der polarisationsrichtung im übergangsbereich sowie verwendung des piezoaktors
DE102005061529B4 (de) * 2005-12-22 2008-04-17 Siemens Ag Bleizirkonattitanat mit Nickel-Molybdän-Dotierung, Verfahren zum Herstellen eines piezokeramischen Bauteils unter Verwendung des Bleizirkonattitanats und Verwendung des piezokeramischen Bauteils
DE102005061528B8 (de) * 2005-12-22 2010-06-10 Siemens Ag Piezokeramisches Bauteil mit Bleizirkonattitanat mit Eisen-Wolfram-Dotierung, Verfahren zum Herstellen des piezokeramischen Bauteils und seine Verwendung

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5112433A (en) * 1988-12-09 1992-05-12 Battelle Memorial Institute Process for producing sub-micron ceramic powders of perovskite compounds with controlled stoichiometry and particle size
US6255037B1 (en) * 1996-04-26 2001-07-03 Murata Manufacturing Co., Ltd. Method for producing monolithic electronic parts
US6236146B1 (en) * 1996-11-12 2001-05-22 Siemens Aktiengesellschaft Piezoelectric actuator with a new type of contacting and a method for the production thereof
US6080328A (en) * 1998-04-13 2000-06-27 Murata Manufacturing Piezoelectric ceramic and method for producing piezoelectric ceramic element
US6320738B1 (en) * 1999-10-28 2001-11-20 Murata Manufacturing Co., Ltd. Monolithic ceramic electronic component and method for making the same

Cited By (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8209828B2 (en) * 1999-12-16 2012-07-03 Epcos Ag Method for making a piezoceramic device
US7855488B2 (en) * 1999-12-16 2010-12-21 Epcos Ag Piezoceramic device
US20100294419A1 (en) * 1999-12-16 2010-11-25 Epcos Ag Method for Making a Piezoceramic Device
US20060251911A1 (en) * 1999-12-16 2006-11-09 Epcos Ag Piezoceramic device
US6960271B2 (en) * 2000-12-28 2005-11-01 Denso Corporation Laminate-type dielectric device, a production method and an electrode paste material
US20040050477A1 (en) * 2000-12-28 2004-03-18 Denso Corporation Laminate-type dielectric device,a production method and an electrode paste material
US20060210781A1 (en) * 2001-12-14 2006-09-21 Denso Corporation Stacked ceramic body and production method thereof
US7063813B1 (en) 2001-12-14 2006-06-20 Denso Corporation Stacked ceramic body and production method thereof
US20090141460A1 (en) * 2002-02-13 2009-06-04 Epcos Ag, A German Corporation Ceramic multilayer component, method for the production thereof and retaining device
US7781945B2 (en) 2002-02-13 2010-08-24 Epcos Ag Ceramic multilayer component, method for the production thereof, and retaining device
US7508112B2 (en) * 2002-02-13 2009-03-24 Epcos Ag Ceramic multilayer component, method for the production thereof and retaining device
US20060234020A1 (en) * 2002-02-13 2006-10-19 Peter Sedlmaier Ceramic multilayer component, method for the production thereof and retaining device
US20090142722A1 (en) * 2002-02-13 2009-06-04 Epcos Ag, A German Corporation Ceramic multilayer component, method for the production thereof, and retaining device
US20030188820A1 (en) * 2002-04-05 2003-10-09 Eturo Yasuda Method for producing stacked ceramic body
US6972060B2 (en) * 2002-04-05 2005-12-06 Nippon Soken, Inc. Method for producing stacked ceramic body
US7074507B2 (en) 2002-05-06 2006-07-11 North Carolina State University Structures including perovskite dielectric layers and variable oxygen concentration gradient layers
US6936301B2 (en) * 2002-05-06 2005-08-30 North Carolina State University Methods of controlling oxygen partial pressure during annealing of a perovskite dielectric layer
US20050227098A1 (en) * 2002-05-06 2005-10-13 North Carolina State University Structures including perovskite dielectric layers and variable oxygen concentration gradient layers
US20040129919A1 (en) * 2002-07-25 2004-07-08 Katsuhiro Horikawa Manufacturing method for monolithic piezoelectric part, and monolithic piezoelectric part
US7431785B2 (en) * 2002-07-25 2008-10-07 Murata Manufacturing Co., Ltd. Manufacturing method for monolithic piezoelectric part, and monolithic piezoelectric part
US20060145571A1 (en) * 2002-09-27 2006-07-06 Alexander Glazunov Piezoelectric transformer provided with internal copper electrodes
US20060119228A1 (en) * 2002-10-25 2006-06-08 Heinz Florian Piezoelectric component
US7432639B2 (en) 2002-10-25 2008-10-07 Epcos Ag Piezoelectric component
US20060279178A1 (en) * 2003-05-13 2006-12-14 Xiaobing Ren Piezoelectric material, manufacturing method thereof, and non-linear piezoelectric element
KR101156524B1 (ko) * 2003-05-13 2012-06-20 도쿠리츠교세이호징 붓시쯔 자이료 겐큐키코 압전 재료와 그 제조 방법 및 비선형 압전 소자
US7408292B2 (en) 2003-09-30 2008-08-05 Epcos Ag Piezoelectric ceramic material multi-layered component and method for the production of a ceramic material
US8776364B2 (en) 2003-09-30 2014-07-15 Epcos Ag Method for producing a multilayer ceramic component
US7525241B2 (en) 2003-09-30 2009-04-28 Epcos Ag Ceramic multi-layer component and method for the production thereof
US20070267948A1 (en) * 2003-09-30 2007-11-22 Adalbert Feltz Piezoelectric Ceramic Material Multi-Layered Component and Method for the Production of a Ceramic Material
US9186870B2 (en) 2003-09-30 2015-11-17 Epcos Ag Ceramic multi-layer component and method for the production thereof
US20090193636A1 (en) * 2003-09-30 2009-08-06 Epcos Ag, A Germany Corporation Ceramic multi-layer component and method for the production thereof
US20070206341A1 (en) * 2003-09-30 2007-09-06 Epcos Ag Ceramic Multi-Layer Component And Method For The Production Thereof
EP1580820A1 (en) * 2004-03-26 2005-09-28 TDK Corporation Method of manufacturing multilayer ceramic device
US20050213283A1 (en) * 2004-03-26 2005-09-29 Tdk Corporation Method of manufacturing multilayer ceramic device
US20080057798A1 (en) * 2004-04-26 2008-03-06 Heinz Florian Electrical Functional Unit and Method for its Production
US7723897B2 (en) 2004-04-26 2010-05-25 Epcos Ag Electrical component and method for the production thereof
US20100193107A1 (en) * 2004-04-26 2010-08-05 EPCOS AG, a corporation of Germany Electric functional unit and method for the production thereof
US8956485B2 (en) 2004-04-26 2015-02-17 Epcos Ag Electric functional unit and method for the production thereof
US20090243441A1 (en) * 2005-01-26 2009-10-01 Epcos Ag Piezoelectric Component
US7868524B2 (en) 2005-01-26 2011-01-11 Epcos Ag Piezoelectric component
US7605522B2 (en) 2005-06-03 2009-10-20 Murata Manufacturing Co., Ltd. Piezoelectric device
US20080074004A1 (en) * 2005-06-03 2008-03-27 Murata Manufacturing Co., Ltd. Piezoelectric device
US20070080317A1 (en) * 2005-10-04 2007-04-12 Tdk Corporation Piezoelectric ceramic composition and laminated piezoelectric element
EP1959510A4 (en) * 2005-12-08 2012-07-11 Murata Manufacturing Co LAMINATED PIEZOELECTRIC ELEMENT AND MANUFACTURING PROCESS THEREFOR
US20100107390A1 (en) * 2005-12-08 2010-05-06 Murata Manufacturing Co., Ltd. Multilayer Piezoelectric Device and Method for Manufacturing the Same
US7667377B2 (en) 2005-12-08 2010-02-23 Murata Manufacturing Co., Ltd. Laminated piezoelectric element and process for producing the same
US20080231147A1 (en) * 2005-12-08 2008-09-25 Murata Manufacturing Co., Ltd. Laminated piezoelectric element and process for producing the same
US8021568B2 (en) 2005-12-22 2011-09-20 Siemens Aktiengesellschaft Nickel-molybdenum-doped lead zirconate titanate, method for the production of a piezoceramic component using said lead zirconate titanate, and use of the piezoceramic component
US20080245991A1 (en) * 2005-12-22 2008-10-09 Francois Bamiere Nickel-Molybdenum-Doped Lead Zirconate Titanate, Method for the Production of a Piezoceramic Component Using Said Lead Zirconate Titanate, and Use of the Piezoceramic Component
US20070216264A1 (en) * 2006-03-20 2007-09-20 Tdk Corporation Multilayer piezoelectric element
US7808155B2 (en) * 2006-12-06 2010-10-05 Murata Manufacturing Co., Ltd. Monolithic piezoelectric element
US20090236945A1 (en) * 2006-12-06 2009-09-24 Murata Manufacturing Co., Ltd. Monolithic piezoelectric element and method for manufacturing the same
US20180033950A1 (en) * 2015-02-16 2018-02-01 Mitsubishi Materials Corporation Piezoelectric ptzt film, and process for producing liquid composition for forming said piezoelectric film
US10797219B2 (en) * 2015-02-16 2020-10-06 Mitsubishi Materials Corporation Piezoelectric PTZT film, and process for producing liquid composition for forming said piezoelectric film
US20210305484A1 (en) * 2020-03-27 2021-09-30 Tdk Corporation Piezoelectric element, piezoelectric actuator, and piezoelectric transformer
US12096695B2 (en) * 2020-03-27 2024-09-17 Tdk Corporation Piezoelectric element, piezoelectric actuator, and piezoelectric transformer

Also Published As

Publication number Publication date
WO2001045138A3 (de) 2002-03-14
BR0016390A (pt) 2002-08-20
EP1240675B1 (de) 2010-09-15
DE10062672A1 (de) 2001-08-02
EP2278634A3 (de) 2012-09-05
EP2278634A2 (de) 2011-01-26
DE10062672B9 (de) 2012-07-12
US20100294419A1 (en) 2010-11-25
JP4248581B2 (ja) 2009-04-02
US7855488B2 (en) 2010-12-21
WO2001045138A2 (de) 2001-06-21
DE10062672B4 (de) 2010-01-21
JP2007150350A (ja) 2007-06-14
ATE481743T1 (de) 2010-10-15
EP1240675A2 (de) 2002-09-18
AU2830701A (en) 2001-06-25
DE50015994D1 (en) 2010-10-28
JP4744052B2 (ja) 2011-08-10
JP2003529917A (ja) 2003-10-07
CN1246914C (zh) 2006-03-22
US20060251911A1 (en) 2006-11-09
US8209828B2 (en) 2012-07-03
DE20023051U1 (de) 2003-01-09
CN1409876A (zh) 2003-04-09

Similar Documents

Publication Publication Date Title
US7855488B2 (en) Piezoceramic device
US7431785B2 (en) Manufacturing method for monolithic piezoelectric part, and monolithic piezoelectric part
KR100557520B1 (ko) 세라믹 재료 및 이를 이용한 압전소자
US7498725B2 (en) Piezoelectric ceramic composition and laminated piezoelectric element
EP1876156A1 (en) Piezoelectric ceramic composition, process for producing said piezoelectric ceramic composition, and piezoelectric ceramic electronic component
KR20030094066A (ko) 압전 자기의 제조 방법 및 압전 소자의 제조 방법
US7507347B2 (en) Piezoelectric ceramic composition and laminated piezoelectric element
US7504042B2 (en) Piezoelectric ceramic composition and piezoelectric ceramic electronic component
JP2004059335A (ja) 圧電磁器組成物、及び圧電素子
JP2002255644A (ja) セラミック材料及びそれを用いた圧電素子
JP5150101B2 (ja) セラミック材料
US7408292B2 (en) Piezoelectric ceramic material multi-layered component and method for the production of a ceramic material
JP5506731B2 (ja) 圧電素子の製造方法
JP4727458B2 (ja) 圧電セラミックス用焼結助剤、ｂｎｔ−ｂｔ系圧電セラミックス、積層型圧電デバイスおよびｂｎｔ−ｂｔ系圧電セラミックスの製造方法
KR100492813B1 (ko) 적층형 압전 세라믹 소자의 제조방법
US20080067897A1 (en) Production Method of Piezoelectric Ceramic, Production Method of Piezoelectric Element, and Piezoelectric Element
JP4231653B2 (ja) 積層型の圧電アクチュエータの製造方法
JPH08198675A (ja) 鉛系複合ペロブスカイト型誘電体磁器
CN113402274A (zh) 压电组合物及电子部件
JP2003192436A (ja) 積層型圧電セラミック素子の製造方法

Legal Events

Date Code Title Description
AS Assignment

Owner name: EPCOS AG, GERMANY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:FELTZ, ADALBERT;GANSBERGER, SIGRID;FLORIAN, HEINZ;AND OTHERS;REEL/FRAME:011935/0669

Effective date: 20010423

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION