TWM538658U - 具有互連層的背照式像素 - Google Patents
具有互連層的背照式像素 Download PDFInfo
- Publication number
- TWM538658U TWM538658U TW105212117U TW105212117U TWM538658U TW M538658 U TWM538658 U TW M538658U TW 105212117 U TW105212117 U TW 105212117U TW 105212117 U TW105212117 U TW 105212117U TW M538658 U TWM538658 U TW M538658U
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- floating diffusion
- transistor
- diffusion region
- imaging pixel
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 113
- 238000009792 diffusion process Methods 0.000 claims abstract description 102
- 238000003384 imaging method Methods 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 34
- 230000008878 coupling Effects 0.000 claims description 9
- 238000010168 coupling process Methods 0.000 claims description 9
- 238000005859 coupling reaction Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims 4
- 235000012431 wafers Nutrition 0.000 description 24
- 238000002955 isolation Methods 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 17
- 229910052732 germanium Inorganic materials 0.000 description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
本新型大致上係關於成像系統,且更具體地係關於具有背照式像素的成像系統。
現代電子裝置(例如行動電話、相機、及電腦)通常使用數位影像感測器。影像感測器(有時稱為成像器)可由影像感測像素之一二維陣列形成。各像素包括一感光層,其接收入射光子(光)並將該等光子轉換成電信號。影像感測器有時係經設計,以使用一聯合圖像專家小組(JPEG)格式將影像提供給電子裝置。
像素可係前照式或背照式。在背照式像素中,可在該感光層底下形成處理電路系統,以使處理電路系統無法阻止入射光到達該感光層。然而,某些背照式像素可具有一低轉換增益,其可經定義為針對由一光二極體所累積之各單位電荷的電壓變化。具有低轉換增益的像素可具有過量的像素讀出雜訊及不佳的像素性能。
因此會希望能夠提供用於影像感測器之經改善的背照式像素。
在本新型的各種實施例中,一成像像素可具備一上部基材層、一下部基材層、在上部基材層中之一浮動擴散區、及在上部基材層中之耦合至浮動擴散區之一光二極體。成像像素亦可包括在下部基材層中之一源極隨耦器電晶體及介於上部基材層與下部基材層間之一互連
層。互連層可將浮動擴散區直接耦合至源極隨耦器電晶體。成像像素亦可包括在上部基材層中之一重置電晶體、在上部基材層中之一轉移電晶體、及在下部基材層中之一列選擇電晶體。成像像素亦可包括將互連層連接至浮動擴散區之一第一金屬層及將互連層連接至源極隨耦器電晶體之一第二金屬層。成像像素可包括一重置電晶體,且互連層可不耦合至重置電晶體。重置電晶體可形成在上部基材層中。互連層可僅耦合至源極隨耦器電晶體及浮動擴散區。互連層可包括金屬。成像像素可包括在上部基材層中之一轉移電晶體、在下部基材層中之一金屬層、及將轉移電晶體耦合至金屬層之一額外互連層。
在本新型的各種實施例中,一成像像素可包括一第一晶圓、一第二晶圓、在第一晶圓中之一浮動擴散區、在第一晶圓中之耦合至浮動擴散區之一光二極體、及在第一晶圓中之耦合至一偏壓電壓供應線之一重置電晶體。成像像素亦可包括在第二晶圓中之一列選擇電晶體、在第二晶圓中之一源極隨耦器電晶體、及介於第一晶圓與第二晶圓間之將浮動擴散區直接耦合至源極隨耦器電晶體之一互連層。成像像素亦可包括在第一晶圓中之一轉移電晶體、在第二晶圓中之一金屬層、及將轉移電晶體耦合至金屬層之一額外互連層。
在本新型的各種實施例中,一影像感測器可包括一上部基材、一下部基材、在上部基材中之耦合至一第一浮動擴散區之一第一光二極體、及在上部基材中之耦合至一第二浮動擴散區之一第二光二極體。影像感測器亦可包括耦合至一偏壓電壓供應線之一重置電晶體。重置電晶體可耦合至第一浮動擴散區及第二浮動擴散區。第一浮動擴散區、第二浮動擴散區、及重置電晶體可形成在上部基材中。影像感測器亦可包括在下部基材中之一第一源極隨耦器電晶體、在下部基材中之一第二源極隨耦器電晶體、將第一浮動擴散區直接耦合至第一源極隨耦器電晶體之一第一互連層、及將第二浮動擴散區直接耦合至第二
源極隨耦器電晶體之一第二互連層。影像感測器亦可包括在下部基材中的第一列選擇電晶體及第二列選擇電晶體。
本新型的各種實施例能提供用於影像感測器之經改善的背照式像素且能克服低轉換增益造成的問題。
10‧‧‧電子裝置
12‧‧‧相機模組
14‧‧‧影像感測器;相機感測器
16‧‧‧影像處理與資料格式化電路系統
18‧‧‧路徑
20‧‧‧主機子系統
22‧‧‧輸入輸出裝置
24‧‧‧儲存與處理電路系統
26‧‧‧路徑
28‧‧‧鏡頭;光學元件
30‧‧‧上部基材層;上部基材
32‧‧‧下部基材層;下部基材
34‧‧‧互連層
34-1‧‧‧互連層
34-2‧‧‧互連層
34-3‧‧‧互連層
34-4‧‧‧互連層
36‧‧‧感光層;光二極體
38‧‧‧隔離層
40‧‧‧鈍化層
42‧‧‧濾色器層
44‧‧‧平坦化層
46‧‧‧微透鏡
48‧‧‧釘紮層
50‧‧‧轉移電晶體
52‧‧‧浮動擴散區
54‧‧‧重置電晶體
56‧‧‧偏壓電壓供應線
58‧‧‧導電層;金屬層
60‧‧‧偏壓電壓供應線
62‧‧‧源極隨耦器電晶體
64‧‧‧列選擇電晶體
66‧‧‧像素輸出線;輸出路徑
100‧‧‧像素
100-1‧‧‧像素
100-2‧‧‧像素
100-3‧‧‧像素
100-4‧‧‧像素
FD‧‧‧浮動擴散區
FD1‧‧‧浮動擴散區
FD2‧‧‧浮動擴散區
FD3‧‧‧浮動擴散區
FD4‧‧‧浮動擴散區
PD‧‧‧光二極體
PD1‧‧‧光二極體
PD2‧‧‧光二極體
PD3‧‧‧光二極體
PD4‧‧‧光二極體
PIXout‧‧‧像素輸出線;輸出路徑
RS‧‧‧列選擇電晶體
RS1‧‧‧列選擇電晶體
RS2‧‧‧列選擇電晶體
RS3‧‧‧列選擇電晶體
RS4‧‧‧列選擇電晶體
RST‧‧‧重置電晶體
S‧‧‧源極
SF‧‧‧源極隨耦器電晶體
SF1‧‧‧源極隨耦器電晶體
SF2‧‧‧源極隨耦器電晶體
SF3‧‧‧源極隨耦器電晶體
SF4‧‧‧源極隨耦器電晶體
TX‧‧‧轉移電晶體
TX1‧‧‧轉移電晶體
TX2‧‧‧轉移電晶體
TX3‧‧‧轉移電晶體
TX4‧‧‧轉移電晶體
VAA‧‧‧偏壓電壓供應線;偏壓電壓層;偏壓電壓
Vout‧‧‧輸出;信號
Vout1‧‧‧輸出
Vout2‧‧‧輸出
Vout3‧‧‧輸出
Vout4‧‧‧輸出
圖1係根據本新型之一實施例之具有一影像感測器之一說明性電子裝置之一示意圖。
圖2係根據本新型之一實施例之具有一互連層之一說明性像素之一剖面側視圖。
圖3係根據本新型之一實施例之圖2的說明性像素之一圖式。
圖4係根據本新型之一實施例之共享一重置電晶體之一說明性像素群之一剖面俯視圖。
圖5係根據本新型之一實施例之圖4的說明性像素群之一圖式。
圖6係根據本新型之一實施例之共享一重置電晶體及一浮動擴散區之一說明性像素群之一剖面俯視圖。
圖7係根據本新型之一實施例之圖6的說明性像素群之一圖式。
圖8係根據本新型之一實施例之具有將一轉移電晶體耦合至一下部基材層中的金屬層之一互連層之一說明性像素之一圖式。
本新型之實施例係關於具有像素的影像感測器,該等像素具有互連層。內具有一數位相機模組之一電子裝置係顯示於圖1中。電子裝置10可為一數位相機、一電腦、一行動電話、一醫療裝置、或其他電子裝置。相機模組12(有時稱為一成像裝置)可包括影像感測器14及一或多個鏡頭28。在操作期間,鏡頭28(有時稱為光學元件28)將光聚焦至影像感測器14上。影像感測器14包括感光元件(例如,像素),其可將光轉換成數位資料。影像感測器可具有任何像素數(例
如,數百個、數千個、數百萬個、或更多個)。一典型影像感測器可例如具有數百萬個像素(例如,百萬像素)。例如,影像感測器14可包括偏壓電路系統(例如,源極隨耦器負載電路)、取樣保持電路系統、相關雙重取樣(CDS)電路系統、放大器電路系統、類比數位(ADC)轉換器電路系統、資料輸出電路系統、記憶體(例如,緩衝器電路系統)、位址電路系統等。
來自影像感測器14的靜態及視訊影像資料可透過路徑26提供給影像處理與資料格式化電路系統16。影像處理與資料格式化電路系統16可用於執行影像處理功能,例如,自動對焦功能、深度感測、資料格式化、調整白平衡與曝光、實施視訊影像穩定化、臉部偵測等。
若有需要,影像處理與資料格式化電路系統16亦可用於壓縮原始相機影像檔案(例如,壓縮成聯合圖像專家小組或JPEG格式)。在一典型配置(有時稱為一系統單晶片(SOC)配置)中,相機感測器14及影像處理與資料格式化電路系統16皆實施於一共用積體電路上。使用一單一積體電路來實施相機感測器14及影像處理與資料格式化電路系統16可有助於降低成本。不過這僅係說明性。若有需要,可使用分開的積體電路來實施相機感測器14及影像處理與資料格式化電路系統16。
相機模組12可透過路徑18將獲取的影像資料傳輸至主機子系統20(例如,影像處理與資料格式化電路系統16可將影像資料傳輸至子系統20)。電子裝置10典型為一使用者提供許多高階功能。例如,在一電腦或先進行動電話中,可為一使用者提供執行使用者應用程式的能力。為了實施這些功能,電子裝置10的主機子系統20可包括儲存與處理電路系統24及輸入輸出裝置22,例如,小鍵盤、輸入輸出埠、搖桿、及顯示器。儲存與處理電路系統24可包括揮發性及非揮發性記憶體(例如,隨機存取記憶體、快閃記憶體、硬碟、固態硬碟等)。儲
存與處理電路系統24亦可包括微處理器、微控制器、數位信號處理器、特殊應用積體電路、或其他處理電路。
影像感測器14之一說明性影像像素係顯示於圖2中。像素100可包括兩個基材層。基材層可為晶圓,晶圓係半導體材料(例如,矽)層。一上部基材層30可連接至一下部基材層32。上部基材層30及下部基材層32可為結晶矽或任何其他所欲材料。一互連層可用於將上部基材層30連接至下部基材層32。互連層34可由一導電材料(例如,金屬)形成。在某些實施例中,互連層可包括焊料。互連層亦可為一矽穿孔(TSV)。
像素100在上部基材層30中可包括感光層36。感光層可為由n型摻雜矽所形成之一光二極體。感光層可由隔離層38圍繞。隔離層38可由p型摻雜矽形成。在某些實施例中,光二極體可由p型摻雜矽形成,且隔離層可由n型摻雜矽形成。在又另一實施例中,可使用深溝槽隔離(DTI)或深溝槽隔離與摻雜矽之一組合來形成隔離層38。隔離層38可防止電荷洩漏至相鄰的感光層。
感光層36可由鈍化層40、濾色器層42、平坦化層44、及微透鏡46覆蓋。鈍化層40及平坦化層44可由介電材料形成。濾色器層42可為一大型濾色器陣列的一部分。例如,影像感測器14中的各像素可具有一個別的濾色器層,其係濾色器陣列的一部分。影像感測器14可包括一拜耳濾色器陣列,其中陣列中之垂直及水平相鄰的濾色器具有不同顏色。拜耳濾色器陣列包括紅色、綠色、及藍色濾色器。一單一紅色、綠色、藍色、青色、洋紅色、黃色、近紅外線、紅外線、或透明濾色器可形成在感光層36上方。在某些實施例中,形成在感光層36上方的濾色器可具有通過彩色光的區域以及透明(亦即,通過可見光譜光)的區域。一微透鏡可形成在影像感測器14中的各像素上方。各微透鏡可引導光朝向一各別感光層。
感光層36可包括釘紮層48。釘紮層48可與轉移電晶體50(TX)、浮動擴散區52(FD)、重置電晶體54(RST)、及偏壓電壓供應線56(Vaa)相鄰。導電層58可定位在上部基材層及下部基材層中(為了簡化圖式,並未明確地標示每一金屬層)。導電層可由金屬形成。導電層58可包括一些穿孔與跡線,其係電連接至像素100中的其他導電層、互連層34、或其他組件。
下部基材32可包括偏壓電壓供應線60(Vaa)、源極隨耦器電晶體62(SF)、列選擇電晶體(RS)、及像素輸出線66(Pixout)。一額外隔離層38可形成在下部基材層32中。金屬層58可將浮動擴散區52耦合至互連層34。接著可將互連層耦合至源極隨耦器電晶體62。依此方式,浮動擴散區52係透過一導電互連路徑直接耦合至源極隨耦器電晶體62。互連層34可僅耦合至浮動擴散區52及源極隨耦器電晶體62。互連層34可不耦合至任何額外的電晶體或區。
重置電晶體54及浮動擴散區52兩者皆可形成在上部基材層30中,如圖2中所示。在一替代實施例中,重置電晶體54可形成在下部基材層中,而浮動擴散區52可形成在上部基材層中。然而,在此實施例中,浮動擴散可經歷一較高電容。這會影響轉換增益,其可經定義為針對由一光二極體所累積之各單位電荷的電壓變化。轉換增益可與在浮動擴散區52的有效電容成反比。例如,一大有效電容可導致一低轉換增益,而一小有效電容則可導致一高轉換增益。較高轉換增益可導致經改善的像素響應及較少的像素讀出雜訊。因此,可能希望浮動擴散區的有效電容低,以確保高轉換增益。圖2的配置(其中重置電晶體54係形成在上部基材層30中)可導致浮動擴散區的低有效電容,其結果為較佳的像素性能。
互連層34的另一優點在於其可充當用於光二極體36之一反射器。當光子通過光二極體36,一些光子可由光二極體吸收並轉換成電荷。
然而,一些光子可通過光二極體,而不會被轉換成電荷。這些光子可反射離開互連層34,並向上朝光二極體前進。此提高藉由光二極體將光子轉換成電荷的機率。
圖3顯示圖2中所示之說明性像素的電路系統。在將光二極體36中累積的電荷轉移至浮動擴散區52之前,可接通重置電晶體54,以將在浮動擴散區52的電荷重置為偏壓電壓Vaa。接著可切斷重置電晶體。
一旦切斷重置電晶體,接著便可接通轉移電晶體50,以將光二極體36中累積的電荷轉移至浮動擴散區52。在電荷的轉移完成之後,可切斷轉移電晶體。
浮動擴散區52可使用一摻雜半導體區(例如,藉由離子植入、雜質擴散、或其他摻雜技術在一矽基材中形成之一摻雜矽區)來實施。摻雜半導體區(亦即,浮動擴散區)展現出可用來儲存已從光二極體36轉移的電荷之一電容。與浮動擴散區52上所儲存之電荷相關聯的信號係藉由源極隨耦器電晶體62輸送至列選擇電晶體64。
當需要讀出已儲存電荷的值(亦即,由電晶體62之源極S處的信號表示的已儲存電荷的值),可接通列選擇電晶體64。當接通列選擇電晶體64時,在輸出路徑66(Pixout)上產生一對應信號VOUT,其代表浮動擴散區52上的電荷量值。在一典型組態中,在一給定影像感測器的影像感測器像素陣列中有許多像素(例如,像素100)的列與行。各輸出路徑66可耦合至與各行像素相關聯之一垂直導電路徑。
若有需要,像素100可具備用於實施一雙轉換增益模式之一額外電晶體。特別地,像素100可在一高轉換增益模式以及一低轉換增益模式中運作。若禁用額外電晶體,則像素100將被置於一高轉換增益模式中。若啟用額外電晶體,則像素100將被置於一低轉換增益模式中。額外電晶體可耦合至一電容器。當額外電晶體被接通時,可將電容器切換成用於提供具有額外電容的浮動擴散FD。此導致用於像素
100的較低轉換增益。當額外電晶體被切斷時,電容器的額外加載被移除,且像素回復至一相對較高的像素轉換增益組態。
在各種實施例中,可由兩個、三個、四個、或四個以上像素共享重置電晶體54。圖4顯示共享一單一重置電晶體的四個像素之一說明性群。各像素可具有一各別光二極體、浮動擴散區、及轉移電晶體。像素100-1可包括光二極體PD1、轉移電晶體TX1、及浮動擴散區FD1。像素100-2可包括光二極體PD2、轉移電晶體TX2、及浮動擴散區FD2。像素100-3可包括光二極體PD3、轉移電晶體TX3、及浮動擴散區FD3。像素100-4可包括光二極體PD4、轉移電晶體TX4、及浮動擴散區FD4。
光二極體PD1、PD2、PD3、及PD4可分開形成並由隔離層38分隔。類似地,轉移電晶體TX1、TX2、TX3、及TX4可分開形成並由隔離層38分隔。浮動擴散區FD1、FD2、FD3、及FD4可分開形成並由隔離層38分隔。
像素100-1、100-2、100-3、及100-4可全部共享一單一重置電晶體54(RST)。重置電晶體可連續形成並與FD1、FD2、FD3、及FD4相鄰。偏壓電壓供應線Vaa可形成為與重置電晶體RST相鄰。相同的偏壓電壓供應線Vaa可用於像素100-1、100-2、100-3、及100-4。
圖4的配置容許在不需用到淺溝槽隔離(STI)的情況下有效分隔轉移電晶體及浮動擴散區。淺溝槽隔離區有時係用於將個別像素與相鄰像素分開。然而,存在STI可引入較高位準的暗電流。藉由消除對STI區的需求,圖4的配置顯著降低像素的暗電流。
圖5顯示圖4中所示的說明性像素群之電路系統。各像素可具有個別源極隨耦器電晶體(SF1、SF2、SF3、及SF4)、列選擇電晶體(RS1、RS2、RS3、及RS4)、以及輸出(VOUT1、VOUT2、VOUT3、及VOUT4)。像素100-1、100-2、100-3、及100-4可各自以連同圖3所述之
與像素100相同的方式運作。然而,取代具有一個別重置電晶體的各像素,各像素使用相同的重置電晶體RST。
像素100-1、100-2、100-3、及100-4可各自具有一各別互連層。互連層34-1可用於將浮動擴散區FD1連接至源極隨耦器電晶體SF1。互連層34-2可用於將浮動擴散區FD2連接至源極隨耦器電晶體SF2。互連層34-3可用於將浮動擴散區FD3連接至源極隨耦器電晶體SF3。互連層34-4可用於將浮動擴散區FD4連接至源極隨耦器電晶體SF4。
圖4的列選擇電晶體RST可為一圓形電晶體,在其中心具有一圓形偏壓電壓層Vaa。然而,這些形狀僅係說明性,且圖4的各電晶體及各區可具有任何所欲形狀。
除了在多個像素之間共享重置電晶體54以外,可由兩個、三個、四個、或四個以上像素共享浮動擴散區52。圖6顯示共享一單一重置電晶體及一單一浮動擴散區的四個像素之一說明性群。各像素可具有一各別光二極體及轉移電晶體。像素100-1可包括光二極體PD1及轉移電晶體TX1。像素100-2可包括光二極體PD2及轉移電晶體TX2。像素100-3可包括光二極體PD3及轉移電晶體TX3。像素100-4可包括光二極體PD4及轉移電晶體TX4。
光二極體PD1、PD2、PD3、及PD4可分開形成並由隔離層38分隔。類似地,轉移電晶體TX1、TX2、TX3、及TX4可分開形成並由隔離層38分隔。
像素100-1、100-2、100-3、及100-4可全部共享一單一重置電晶體54(RST)及一單一浮動擴散區(FD)。重置電晶體可連續形成並與FD相鄰。浮動擴散區FD可連續形成並與TX1、TX2、TX3、及TX4相鄰。偏壓電壓供應線Vaa可形成為與重置電晶體RST相鄰。相同的偏壓電壓供應線Vaa可用於像素100-1、100-2、100-3、及100-4。
類似於圖4的配置,圖6的配置免除對淺溝槽隔離的需求。此顯著
降低像素的暗電流。此外,當只有一個用於像素群的浮動擴散區時,只需要一個互連層以將浮動擴散區連接至源極隨耦器電晶體。此容許像素尺寸的進一步縮減。
因為圖6中的各像素使用相同的浮動擴散區(FD),圖6的配置在具有併像(binning)的應用中可為特別有用的。例如,浮動擴散區可用於儲存來自任何組合中之光二極體PD1、PD2、PD3、及PD4的累積電荷。例如,可儲存來自PD1及PD4的累積電荷、來自PD2及PD3的累積電荷、來自PD1、PD2、PD3、及PD4的累積電荷、或來自任何其他所欲之光二極體組合的累積電荷。
圖7顯示圖6中所示的說明性像素群之電路系統。像素100-1、100-2、100-3、及100-4可全部使用一單一源極隨耦器電晶體(SF)、一單一列選擇電晶體(RS)、及一單一輸出(VOUT)。像素100-1、100-2、100-3、及100-4可各自以連同圖3所述之與像素100相同的方式運作。然而,取代具有一個別重置電晶體及浮動擴散區的各像素,各像素使用相同的重置電晶體RST及相同的浮動擴散區(FD)。
像素100-1、100-2、100-3、及100-4可共享一單一互連層34。互連層34可用於將浮動擴散區FD連接至源極隨耦器電晶體SF。只使用介於上部基材層30與下部基材層32之間的一個互連層可有助於縮小像素群的尺寸。
圖6的浮動擴散區FD可為一圓形區,在其中心具有一圓形重置電晶體及一圓形偏壓電壓層Vaa。然而,這些形狀僅係說明性,且圖6的各電晶體及各區可具有任何所欲形狀。
在某些情況下,具有完全形成在上部基材30中的轉移電晶體50(例如,圖2至圖7)可導致互連繞線擁塞。為了提供更多空間給對應至轉移電晶體50的互連,轉移電晶體50可跨越上部基材層及下部基材層。
圖8顯示用於一說明性像素之電路系統,其中轉移電晶體50在上部基材30與下部基材32兩者中均包括金屬層。圖8中的像素100可具有與圖3中像素100相同的操作方案。然而,在圖8中,除了將浮動擴散區52耦合至源極隨耦器電晶體62之互連層34-1以外,還具有將轉移電晶體50耦合至下部基材32中的金屬層之一額外互連層34-2。
將一轉移電晶體連接至下部基材層中的金屬層之一互連層可用在各種像素架構中。在圖8中,重置電晶體54係顯示成形成在上部基材層30中。然而,重置電晶體54可形成在下部基材層32中。在這些實施例中,互連層34-1可耦合至源極隨耦器電晶體62及重置電晶體兩者。在這些實施例中,一額外互連層可將轉移電晶體連接至下部基材層32中的金屬層。
在本新型的各種實施例中,一成像像素可具備一上部基材層、一下部基材層、在上部基材層中之一浮動擴散區、及在上部基材層中之耦合至浮動擴散區之一光二極體。成像像素亦可包括在下部基材層中之一源極隨耦器電晶體及介於上部基材層與下部基材層間之一互連層。互連層可將浮動擴散區直接耦合至源極隨耦器電晶體。成像像素亦可包括在上部基材層中之一重置電晶體、在上部基材層中之一轉移電晶體、及在下部基材層中之一列選擇電晶體。成像像素亦可包括將互連層連接至浮動擴散區之一第一金屬層及將互連層連接至源極隨耦器電晶體之一第二金屬層。成像像素可包括一重置電晶體,且互連層可不耦合至重置電晶體。重置電晶體可形成在上部基材層中。互連層可僅耦合至源極隨耦器電晶體及浮動擴散區。互連層可包括金屬。成像像素可包括在上部基材層中之一轉移電晶體、在下部基材層中之一金屬層、及將轉移電晶體耦合至金屬層之一額外互連層。
在本新型的各種實施例中,一成像像素可包括一第一晶圓、一第二晶圓、在第一晶圓中之一浮動擴散區、在第一晶圓中之耦合至浮動
擴散區之一光二極體、及在第一晶圓中之耦合至一偏壓電壓供應線之一重置電晶體。成像像素亦可包括在第二晶圓中之一列選擇電晶體、在第二晶圓中之一源極隨耦器電晶體、及介於第一晶圓與第二晶圓間之將浮動擴散區直接耦合至源極隨耦器電晶體之一互連層。成像像素亦可包括在第一晶圓中之一轉移電晶體、在第二晶圓中之一金屬層、及將轉移電晶體耦合至金屬層之一額外互連層。
在本新型的各種實施例中,一影像感測器可包括一上部基材、一下部基材、在上部基材中之耦合至一第一浮動擴散區之一第一光二極體、及在上部基材中之耦合至一第二浮動擴散區之一第二光二極體。影像感測器亦可包括耦合至一偏壓電壓供應線之一重置電晶體。重置電晶體可耦合至第一浮動擴散區及第二浮動擴散區。第一浮動擴散區、第二浮動擴散區、及重置電晶體可形成在上部基材中。影像感測器亦可包括在下部基材中之一第一源極隨耦器電晶體、在下部基材中之一第二源極隨耦器電晶體、將第一浮動擴散區直接耦合至第一源極隨耦器電晶體之一第一互連層、及將第二浮動擴散區直接耦合至第二源極隨耦器電晶體之一第二互連層。影像感測器亦可包括在下部基材中的第一列選擇電晶體及第二列選擇電晶體。
上述僅作為本新型之原理的例證,在不悖離本新型之範疇與精神的情況下,所屬技術領域中具有通常知識者可作出各種修改。
30‧‧‧上部基材層;上部基材
32‧‧‧下部基材層;下部基材
34‧‧‧互連層
36‧‧‧感光層;光二極體
38‧‧‧隔離層
40‧‧‧鈍化層
42‧‧‧濾色器層
44‧‧‧平坦化層
46‧‧‧微透鏡
48‧‧‧釘紮層
50‧‧‧轉移電晶體
52‧‧‧浮動擴散區
54‧‧‧重置電晶體
56‧‧‧偏壓電壓供應線
58‧‧‧導電層;金屬層
60‧‧‧偏壓電壓供應線
62‧‧‧源極隨耦器電晶體
64‧‧‧列選擇電晶體
66‧‧‧像素輸出線;輸出路徑
100‧‧‧像素
Claims (21)
- 一種成像像素,其包含:一上部基材層;一下部基材層;一浮動擴散區,其係在該上部基材層中;一光二極體,其係在該上部基材層中且經耦合至該浮動擴散區;一源極隨耦器電晶體,其係在該下部基材層中;及一互連層,其係介於該上部基材層與該下部基材層之間,其中該互連層將該浮動擴散區直接耦合至該源極隨耦器電晶體。
- 如請求項1之成像像素,其進一步包含:一重置電晶體,其係在該上部基材層中。
- 如請求項2之成像像素,其進一步包含:一轉移電晶體,其係在該上部基材層中。
- 如請求項3之成像像素,其進一步包含:一列選擇電晶體,其係在該下部基材層中。
- 如請求項4之成像像素,其進一步包含:一第一金屬層,其將該互連層連接至該浮動擴散區;及一第二金屬層,其將該互連層連接至該源極隨耦器電晶體。
- 如請求項1之成像像素,其進一步包含:一重置電晶體,其中該互連層並未經耦合至該重置電晶體。
- 如請求項6之成像像素,其中該重置電晶體係形成在該上部基材層中。
- 如請求項1之成像像素,其中該互連層係僅經耦合至該源極隨耦器電晶體及該浮動擴散區。
- 如請求項1之成像像素,其進一步包含:一轉移電晶體,其係在該上部基材層中;一金屬層,其係在該下部基材層中;及一額外互連層,其將該轉移電晶體耦合至該金屬層。
- 如請求項1之成像像素,其中該互連層包含金屬。
- 如請求項1之成像像素,其中該互連層係經定位,使得進入光子係反射離開該互連層並朝向該光二極體。
- 一種成像像素,其包含:一第一晶圓;一第二晶圓;一浮動擴散區,其係在該第一晶圓中;一光二極體,其係在該第一晶圓中且經耦合至該浮動擴散區;及一重置電晶體,其係在該第一晶圓中且經耦合至一偏壓電壓供應線。
- 如請求項12之成像像素,其進一步包含:一列選擇電晶體,其係在該第二晶圓中。
- 如請求項13之成像像素,其進一步包含:一源極隨耦器電晶體,其係在該第二晶圓中。
- 如請求項14之成像像素,其進一步包含:一互連層,其係介於該第一晶圓與該第二晶圓之間,其中該互連層將該浮動擴散區直接耦合至該源極隨耦器電晶體。
- 如請求項15之成像像素,其進一步包含:一轉移電晶體,其係在該第一晶圓中。
- 如請求項16之成像像素,其進一步包含:一金屬層,其係在該第二晶圓中;及 一額外互連層,其將該轉移電晶體耦合至該金屬層。
- 一種影像感測器,其包含:一上部基材;一下部基材;一第一光二極體,其係在該上部基材中且經耦合至一第一浮動擴散區;一第二光二極體,其係在該上部基材中且經耦合至一第二浮動擴散區;及一重置電晶體,其係經耦合至一偏壓電壓供應線,其中該重置電晶體係經耦合至該第一浮動擴散區及該第二浮動擴散區。
- 如請求項18之影像感測器,其中該第一浮動擴散區、該第二浮動擴散區、及該重置電晶體係形成在該上部基材中。
- 如請求項19之影像感測器,其進一步包含:一第一源極隨耦器電晶體,其係在該下部基材中;一第二源極隨耦器電晶體,其係在該下部基材中;一第一互連層,其將該第一浮動擴散區直接耦合至該第一源極隨耦器電晶體;及一第二互連層,其將該第二浮動擴散區直接耦合至該第二源極隨耦器電晶體。
- 如請求項20之影像感測器,其進一步包含:一第一列選擇電晶體,其係在該下部基材中;及一第二列選擇電晶體,其係在該下部基材中。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/836,599 US10014333B2 (en) | 2015-08-26 | 2015-08-26 | Back-side illuminated pixels with interconnect layers |
Publications (1)
Publication Number | Publication Date |
---|---|
TWM538658U true TWM538658U (zh) | 2017-03-21 |
Family
ID=56787737
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105212117U TWM538658U (zh) | 2015-08-26 | 2016-08-10 | 具有互連層的背照式像素 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10014333B2 (zh) |
EP (2) | EP3308400B1 (zh) |
CN (2) | CN209134528U (zh) |
TW (1) | TWM538658U (zh) |
WO (1) | WO2017034864A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI766468B (zh) * | 2019-12-20 | 2022-06-01 | 美商豪威科技股份有限公司 | 成像系統中像素單元之通道接點 |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9923011B2 (en) * | 2016-01-12 | 2018-03-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure with stacked semiconductor dies |
US9854184B2 (en) | 2016-03-01 | 2017-12-26 | Semiconductor Components Industries, Llc | Imaging pixels with a fully depleted charge transfer path |
KR20240042189A (ko) | 2016-10-18 | 2024-04-01 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 광검출기 |
US10608026B2 (en) | 2016-12-28 | 2020-03-31 | Samsung Electronics Co., Ltd. | Image sensors |
US9859312B1 (en) * | 2017-02-08 | 2018-01-02 | Omnivision Technologies, Inc. | Feedback capacitor formed by bonding-via in pixel level bond |
US10419701B2 (en) | 2017-06-26 | 2019-09-17 | Facebook Technologies, Llc | Digital pixel image sensor |
US10917589B2 (en) | 2017-06-26 | 2021-02-09 | Facebook Technologies, Llc | Digital pixel with extended dynamic range |
US10686996B2 (en) | 2017-06-26 | 2020-06-16 | Facebook Technologies, Llc | Digital pixel with extended dynamic range |
US10825854B2 (en) * | 2017-08-16 | 2020-11-03 | Facebook Technologies, Llc | Stacked photo sensor assembly with pixel level interconnect |
US10598546B2 (en) | 2017-08-17 | 2020-03-24 | Facebook Technologies, Llc | Detecting high intensity light in photo sensor |
US11393867B2 (en) | 2017-12-06 | 2022-07-19 | Facebook Technologies, Llc | Multi-photodiode pixel cell |
WO2019130702A1 (ja) * | 2017-12-27 | 2019-07-04 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
US10969273B2 (en) | 2018-03-19 | 2021-04-06 | Facebook Technologies, Llc | Analog-to-digital converter having programmable quantization resolution |
US11004881B2 (en) | 2018-04-03 | 2021-05-11 | Facebook Technologies, Llc | Global shutter image sensor |
US11233085B2 (en) | 2018-05-09 | 2022-01-25 | Facebook Technologies, Llc | Multi-photo pixel cell having vertical gate structure |
US11906353B2 (en) | 2018-06-11 | 2024-02-20 | Meta Platforms Technologies, Llc | Digital pixel with extended dynamic range |
US10903260B2 (en) | 2018-06-11 | 2021-01-26 | Facebook Technologies, Llc | Multi-photodiode pixel cell |
US11089241B2 (en) | 2018-06-11 | 2021-08-10 | Facebook Technologies, Llc | Pixel cell with multiple photodiodes |
US11089210B2 (en) | 2018-06-11 | 2021-08-10 | Facebook Technologies, Llc | Configurable image sensor |
US11463636B2 (en) | 2018-06-27 | 2022-10-04 | Facebook Technologies, Llc | Pixel sensor having multiple photodiodes |
US10897586B2 (en) | 2018-06-28 | 2021-01-19 | Facebook Technologies, Llc | Global shutter image sensor |
US10931884B2 (en) | 2018-08-20 | 2021-02-23 | Facebook Technologies, Llc | Pixel sensor having adaptive exposure time |
US11956413B2 (en) | 2018-08-27 | 2024-04-09 | Meta Platforms Technologies, Llc | Pixel sensor having multiple photodiodes and shared comparator |
CN112689900A (zh) * | 2018-10-17 | 2021-04-20 | 索尼半导体解决方案公司 | 摄像元件和电子装置 |
US11595602B2 (en) | 2018-11-05 | 2023-02-28 | Meta Platforms Technologies, Llc | Image sensor post processing |
US11102430B2 (en) | 2018-12-10 | 2021-08-24 | Facebook Technologies, Llc | Pixel sensor having multiple photodiodes |
JP7378935B2 (ja) * | 2019-02-06 | 2023-11-14 | キヤノン株式会社 | 画像処理装置 |
US11218660B1 (en) | 2019-03-26 | 2022-01-04 | Facebook Technologies, Llc | Pixel sensor having shared readout structure |
CN113519068B (zh) * | 2019-03-29 | 2023-07-18 | 索尼半导体解决方案公司 | 固态摄像装置和电子设备 |
JP2020182112A (ja) * | 2019-04-25 | 2020-11-05 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
US11943561B2 (en) | 2019-06-13 | 2024-03-26 | Meta Platforms Technologies, Llc | Non-linear quantization at pixel sensor |
TWI748460B (zh) * | 2019-06-21 | 2021-12-01 | 大陸商廣州印芯半導體技術有限公司 | 飛時測距裝置及飛時測距方法 |
US11936998B1 (en) | 2019-10-17 | 2024-03-19 | Meta Platforms Technologies, Llc | Digital pixel sensor having extended dynamic range |
KR20210055145A (ko) | 2019-11-06 | 2021-05-17 | 삼성전자주식회사 | 이미지 센서 |
KR20220101694A (ko) * | 2019-11-20 | 2022-07-19 | 기가조트 테크널러지 인코포레이티드 | 스케일러블 픽셀 크기 이미지센서 |
US11902685B1 (en) | 2020-04-28 | 2024-02-13 | Meta Platforms Technologies, Llc | Pixel sensor having hierarchical memory |
US11910114B2 (en) | 2020-07-17 | 2024-02-20 | Meta Platforms Technologies, Llc | Multi-mode image sensor |
US11956560B2 (en) | 2020-10-09 | 2024-04-09 | Meta Platforms Technologies, Llc | Digital pixel sensor having reduced quantization operation |
US12022218B2 (en) | 2020-12-29 | 2024-06-25 | Meta Platforms Technologies, Llc | Digital image sensor using a single-input comparator based quantizer |
Family Cites Families (107)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5705807A (en) * | 1994-10-24 | 1998-01-06 | Nissan Motor Co., Ltd. | Photo detecting apparatus for detecting reflected light from an object and excluding an external light componet from the reflected light |
US6657665B1 (en) * | 1998-12-31 | 2003-12-02 | Eastman Kodak Company | Active Pixel Sensor with wired floating diffusions and shared amplifier |
US6608338B2 (en) * | 2001-08-30 | 2003-08-19 | Micron Technology, Inc. | CMOS imager and method of formation |
JP3792628B2 (ja) * | 2002-09-02 | 2006-07-05 | 富士通株式会社 | 固体撮像装置及び画像読み出し方法 |
US6927432B2 (en) * | 2003-08-13 | 2005-08-09 | Motorola, Inc. | Vertically integrated photosensor for CMOS imagers |
JP4971586B2 (ja) * | 2004-09-01 | 2012-07-11 | キヤノン株式会社 | 固体撮像装置 |
KR100690880B1 (ko) * | 2004-12-16 | 2007-03-09 | 삼성전자주식회사 | 픽셀별 광감도가 균일한 이미지 센서 및 그 제조 방법 |
KR100687102B1 (ko) * | 2005-03-30 | 2007-02-26 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법. |
US7534982B2 (en) * | 2005-06-09 | 2009-05-19 | Micron Technology, Inc. | Reduced imager crosstalk and pixel noise using extended buried contacts |
US7586076B2 (en) * | 2006-09-21 | 2009-09-08 | Aptina Imaging Corporation | Image sensor device having one or more modified dummy pixels that are usable as non-volatile memory elements |
US8049256B2 (en) * | 2006-10-05 | 2011-11-01 | Omnivision Technologies, Inc. | Active pixel sensor having a sensor wafer connected to a support circuit wafer |
US7781781B2 (en) * | 2006-11-17 | 2010-08-24 | International Business Machines Corporation | CMOS imager array with recessed dielectric |
KR100839355B1 (ko) * | 2006-11-28 | 2008-06-19 | 삼성전자주식회사 | 기판의 재생 방법 |
US20080258187A1 (en) * | 2007-04-18 | 2008-10-23 | Ladd John W | Methods, systems and apparatuses for the design and use of imager sensors |
US7960768B2 (en) * | 2008-01-17 | 2011-06-14 | Aptina Imaging Corporation | 3D backside illuminated image sensor with multiplexed pixel structure |
US7888763B2 (en) * | 2008-02-08 | 2011-02-15 | Omnivision Technologies, Inc. | Backside illuminated imaging sensor with improved infrared sensitivity |
US20090201400A1 (en) * | 2008-02-08 | 2009-08-13 | Omnivision Technologies, Inc. | Backside illuminated image sensor with global shutter and storage capacitor |
US7858915B2 (en) | 2008-03-31 | 2010-12-28 | Eastman Kodak Company | Active pixel sensor having two wafers |
US7883916B2 (en) * | 2008-05-30 | 2011-02-08 | International Business Machines Corporation | Optical sensor including stacked photosensitive diodes |
US7893468B2 (en) * | 2008-05-30 | 2011-02-22 | International Business Machines Corporation | Optical sensor including stacked photodiodes |
US7965329B2 (en) * | 2008-09-09 | 2011-06-21 | Omnivision Technologies, Inc. | High gain read circuit for 3D integrated pixel |
KR101545638B1 (ko) | 2008-12-17 | 2015-08-19 | 삼성전자 주식회사 | 이미지 센서 및 그 제조 방법, 이미지 센서를 포함하는 장치 및 그 제조 방법 |
KR101559907B1 (ko) | 2009-01-06 | 2015-10-13 | 삼성전자주식회사 | 전기 회로 배선을 라인 앤 스페이스 타입의 반사막 패턴으로 변경함으로써, 메탈 라인의 최소 간격에 따라 광 감도가 개선되는 이미지 센서 및 그 제조방법. |
JP2010177391A (ja) * | 2009-01-29 | 2010-08-12 | Sony Corp | 固体撮像装置、電子機器、固体撮像装置の製造方法 |
JP2010206173A (ja) * | 2009-02-06 | 2010-09-16 | Canon Inc | 光電変換装置およびカメラ |
US9142586B2 (en) * | 2009-02-24 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad design for backside illuminated image sensor |
EP2416562A4 (en) * | 2009-03-30 | 2012-11-14 | Konica Minolta Opto Inc | SEMICONDUCTOR IMAGING DEVICE |
FR2949173A1 (fr) * | 2009-08-12 | 2011-02-18 | St Microelectronics Sa | Capteur d'images eclaire par la face arriere protege des rayons infrarouges |
KR101648200B1 (ko) * | 2009-10-22 | 2016-08-12 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
US8283745B2 (en) * | 2009-11-06 | 2012-10-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating backside-illuminated image sensor |
TWI420662B (zh) * | 2009-12-25 | 2013-12-21 | Sony Corp | 半導體元件及其製造方法,及電子裝置 |
KR101107627B1 (ko) * | 2010-02-22 | 2012-01-25 | (주)실리콘화일 | 3차원 구조를 갖는 웨이퍼의 패드 형성 방법 |
JP6158701B2 (ja) * | 2010-03-19 | 2017-07-05 | インヴィサージ テクノロジーズ インコーポレイテッドInvisage Technologies,Inc. | 画像センサ及び画像センサから読み出しを行う方法 |
US8368157B2 (en) | 2010-04-06 | 2013-02-05 | Aptina Imaging Coporation | Backside illumination image sensors with reflective light guides |
US8278690B2 (en) * | 2010-04-27 | 2012-10-02 | Omnivision Technologies, Inc. | Laser anneal for image sensors |
JP5843475B2 (ja) * | 2010-06-30 | 2016-01-13 | キヤノン株式会社 | 固体撮像装置および固体撮像装置の製造方法 |
JP5553693B2 (ja) * | 2010-06-30 | 2014-07-16 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
US20120002092A1 (en) | 2010-06-30 | 2012-01-05 | Guidash Robert M | Low noise active pixel sensor |
US9013612B2 (en) * | 2010-08-20 | 2015-04-21 | Semiconductor Components Industries, Llc | Image sensors with antireflective layers |
JP5570377B2 (ja) | 2010-09-30 | 2014-08-13 | キヤノン株式会社 | 固体撮像装置 |
KR20120047368A (ko) * | 2010-11-02 | 2012-05-14 | 삼성전자주식회사 | 이미지 센서 |
US8071429B1 (en) * | 2010-11-24 | 2011-12-06 | Omnivision Technologies, Inc. | Wafer dicing using scribe line etch |
US8723094B2 (en) * | 2010-12-21 | 2014-05-13 | Sionyx, Inc. | Photodetecting imager devices having correlated double sampling and associated methods |
US8455971B2 (en) * | 2011-02-14 | 2013-06-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for improving charge transfer in backside illuminated image sensor |
US8730330B2 (en) * | 2011-07-25 | 2014-05-20 | Aptina Imaging Corporation | Image sensors with dark pixels for real-time verification of imaging systems |
KR101399338B1 (ko) * | 2011-08-08 | 2014-05-30 | (주)실리콘화일 | 이중 감지 기능을 가지는 기판 적층형 이미지 센서 |
US9030583B2 (en) * | 2011-09-21 | 2015-05-12 | Semiconductor Components Industries, Llc | Imaging system with foveated imaging capabilites |
US8890047B2 (en) | 2011-09-21 | 2014-11-18 | Aptina Imaging Corporation | Stacked-chip imaging systems |
US20130075607A1 (en) * | 2011-09-22 | 2013-03-28 | Manoj Bikumandla | Image sensors having stacked photodetector arrays |
US9190434B2 (en) * | 2011-09-30 | 2015-11-17 | Omnivision Technologies, Inc. | CMOS image sensor with reset shield line |
US8815723B2 (en) * | 2011-09-30 | 2014-08-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Process for enhancing image quality of backside illuminated image sensor |
US8461660B2 (en) * | 2011-09-30 | 2013-06-11 | Omnivision Technologies, Inc. | CMOS image sensor with reset shield line |
US9053993B2 (en) * | 2011-10-07 | 2015-06-09 | Semiconductor Components Industries, Llc | Imaging systems with selectable column power control |
US8569856B2 (en) * | 2011-11-03 | 2013-10-29 | Omnivision Technologies, Inc. | Pad design for circuit under pad in semiconductor devices |
KR101334099B1 (ko) * | 2011-11-17 | 2013-11-29 | (주)실리콘화일 | 이중 감지 기능을 가지는 기판 적층형 이미지 센서 |
US9349761B2 (en) | 2011-12-07 | 2016-05-24 | Olympus Corporation | Solid-state image pickup device and color signal reading method including a plurality of electrically-coupled substrates |
US9112090B2 (en) * | 2012-01-31 | 2015-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | UV radiation recovery of image sensor |
US8742311B2 (en) * | 2012-02-27 | 2014-06-03 | Omnivision Technologies, Inc. | Enhanced pixel cell architecture for an image sensor having a direct output from a buried channel source follower transistor to a bit line |
US9007489B2 (en) * | 2012-02-28 | 2015-04-14 | Semiconductor Components Industries, Llc | Method and apparatus for image background removal and replacement |
US8569700B2 (en) * | 2012-03-06 | 2013-10-29 | Omnivision Technologies, Inc. | Image sensor for two-dimensional and three-dimensional image capture |
JP6402624B2 (ja) * | 2012-03-30 | 2018-10-10 | 株式会社ニコン | 撮像素子および撮像装置 |
US10090349B2 (en) | 2012-08-09 | 2018-10-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS image sensor chips with stacked scheme and methods for forming the same |
US8941204B2 (en) * | 2012-04-27 | 2015-01-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for reducing cross talk in image sensors |
KR101968197B1 (ko) * | 2012-05-18 | 2019-04-12 | 삼성전자주식회사 | 이미지 센서 및 이의 형성 방법 |
JP2014011304A (ja) * | 2012-06-29 | 2014-01-20 | Toshiba Corp | 固体撮像装置 |
US9478574B2 (en) * | 2012-09-19 | 2016-10-25 | Semiconductor Components Industries, Llc | Image sensor pixels with light guides and light shield structures |
US9105546B2 (en) * | 2012-09-19 | 2015-08-11 | Semiconductor Components Industries, Llc | Imaging systems with backside illuminated near infrared imaging pixels |
JP2014086551A (ja) * | 2012-10-23 | 2014-05-12 | Canon Inc | 撮像装置及びカメラ |
US9093345B2 (en) | 2012-10-26 | 2015-07-28 | Canon Kabushiki Kaisha | Solid-state imaging apparatus and imaging system |
US8946784B2 (en) * | 2013-02-18 | 2015-02-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for image sensor packaging |
KR102056867B1 (ko) * | 2013-03-04 | 2020-01-22 | 삼성전자주식회사 | 반도체 소자 및 그 제조방법 |
US9245912B2 (en) * | 2013-03-12 | 2016-01-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for low resistance image sensor contact |
KR102083550B1 (ko) * | 2013-03-15 | 2020-04-14 | 삼성전자주식회사 | 이미지 센서 및 이의 제조 방법 |
US9319612B2 (en) * | 2013-07-08 | 2016-04-19 | Semiconductor Components Industries, Llc | Imagers with improved analog-to-digital circuitry |
US9356061B2 (en) * | 2013-08-05 | 2016-05-31 | Apple Inc. | Image sensor with buried light shield and vertical gate |
US9749553B2 (en) * | 2013-08-23 | 2017-08-29 | Semiconductor Components Industries, Llc | Imaging systems with stacked image sensors |
US9305952B2 (en) * | 2013-08-27 | 2016-04-05 | Semiconductor Components Industries, Llc | Image sensors with inter-pixel light blocking structures |
JP2015060855A (ja) * | 2013-09-17 | 2015-03-30 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
US9054004B2 (en) * | 2013-09-18 | 2015-06-09 | Taiwan Semiconductor Manufacturing Company Limited | Pixel isolation structures in backside illuminated image sensors |
US20150123173A1 (en) | 2013-11-01 | 2015-05-07 | Silicon Optronics, Inc. | 3d stacked image sensor with pmos components |
US20150122971A1 (en) | 2013-11-01 | 2015-05-07 | Silicon Optronics, Inc. | 3d stacked image sensor |
JP6377947B2 (ja) * | 2014-04-21 | 2018-08-22 | ルネサスエレクトロニクス株式会社 | 固体撮像素子および電子機器 |
JP6443667B2 (ja) * | 2014-05-23 | 2018-12-26 | パナソニックIpマネジメント株式会社 | 撮像装置 |
US9362320B2 (en) * | 2014-06-03 | 2016-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit having a level shifter and method of making the same |
US9825074B2 (en) * | 2014-06-10 | 2017-11-21 | Invisage Technologies, Inc. | Layout and operation of pixels for image sensors |
US9553118B2 (en) * | 2014-06-18 | 2017-01-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Formation of buried color filters in a back side illuminated image sensor using an etching-stop layer |
KR102268712B1 (ko) * | 2014-06-23 | 2021-06-28 | 삼성전자주식회사 | 자동 초점 이미지 센서 및 이를 포함하는 디지털 영상 처리 장치 |
CN105261623A (zh) * | 2014-07-16 | 2016-01-20 | 中芯国际集成电路制造(上海)有限公司 | 芯片、其制备方法、及包括其的图像传感器 |
US9613994B2 (en) * | 2014-07-16 | 2017-04-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Capacitance device in a stacked scheme and methods of forming the same |
US9748299B2 (en) * | 2014-08-06 | 2017-08-29 | Samsung Electronics Co., Ltd. | Pixel, image sensor including the same, and portable electronic device including the image sensor |
JP6299544B2 (ja) * | 2014-09-24 | 2018-03-28 | 株式会社Jvcケンウッド | 固体撮像装置 |
KR102410088B1 (ko) * | 2014-12-11 | 2022-06-20 | 삼성전자주식회사 | 이미지 센서 |
KR102384890B1 (ko) * | 2015-01-13 | 2022-04-11 | 삼성전자주식회사 | 이미지 센서 및 그 형성 방법 |
US9613916B2 (en) * | 2015-03-12 | 2017-04-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Protection ring for image sensors |
US9490282B2 (en) * | 2015-03-19 | 2016-11-08 | Omnivision Technologies, Inc. | Photosensitive capacitor pixel for image sensor |
US9888191B2 (en) * | 2015-04-21 | 2018-02-06 | Semiconductor Components Industries, Llc | Imaging systems and methods for performing unboosted image sensor pixel conversion gain adjustments |
US9595555B2 (en) * | 2015-05-04 | 2017-03-14 | Semiconductor Components Industries, Llc | Pixel isolation regions formed with conductive layers |
JP6671864B2 (ja) * | 2015-05-18 | 2020-03-25 | キヤノン株式会社 | 撮像装置の製造方法および撮像装置 |
US10075704B2 (en) * | 2015-05-20 | 2018-09-11 | Semiconductor Components Industries, Llc | Methods and apparatus for generating test and overlay patterns in image sensors |
US9515116B1 (en) * | 2015-05-22 | 2016-12-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Vertical transfer gate structure for a back-side illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor using global shutter capture |
US9584744B2 (en) * | 2015-06-23 | 2017-02-28 | Semiconductor Components Industries, Llc | Image sensors with voltage-biased trench isolation structures |
US9704827B2 (en) * | 2015-06-25 | 2017-07-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Hybrid bond pad structure |
US9654712B2 (en) * | 2015-10-07 | 2017-05-16 | Semiconductor Components Industries, Llc | Pixels with a global shutter and high dynamic range |
KR102437162B1 (ko) * | 2015-10-12 | 2022-08-29 | 삼성전자주식회사 | 이미지 센서 |
US9711551B2 (en) * | 2015-11-09 | 2017-07-18 | Semiconductor Components Industries, Llc | Image sensors with color filter windows |
US10566375B2 (en) * | 2016-01-29 | 2020-02-18 | Semiconductor Components Industries, Llc | Stacked-die image sensors with shielding |
US9854184B2 (en) * | 2016-03-01 | 2017-12-26 | Semiconductor Components Industries, Llc | Imaging pixels with a fully depleted charge transfer path |
-
2015
- 2015-08-26 US US14/836,599 patent/US10014333B2/en active Active
-
2016
- 2016-08-10 TW TW105212117U patent/TWM538658U/zh unknown
- 2016-08-16 WO PCT/US2016/047207 patent/WO2017034864A1/en unknown
- 2016-08-16 EP EP16754649.8A patent/EP3308400B1/en active Active
- 2016-08-16 CN CN201821758762.8U patent/CN209134528U/zh active Active
- 2016-08-16 EP EP22176750.2A patent/EP4071820A1/en active Pending
- 2016-08-16 CN CN201690001087.7U patent/CN208189594U/zh active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI766468B (zh) * | 2019-12-20 | 2022-06-01 | 美商豪威科技股份有限公司 | 成像系統中像素單元之通道接點 |
Also Published As
Publication number | Publication date |
---|---|
EP4071820A1 (en) | 2022-10-12 |
CN208189594U (zh) | 2018-12-04 |
US20170062501A1 (en) | 2017-03-02 |
CN209134528U (zh) | 2019-07-19 |
EP3308400A1 (en) | 2018-04-18 |
WO2017034864A1 (en) | 2017-03-02 |
EP3308400B1 (en) | 2022-09-28 |
US10014333B2 (en) | 2018-07-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3308400B1 (en) | Back-side illuminated pixels with interconnect layers | |
US9711551B2 (en) | Image sensors with color filter windows | |
US10186535B2 (en) | Image sensors with stacked photodiodes | |
JP6211145B2 (ja) | スタックトチップイメージングシステム | |
US10192919B2 (en) | Imaging systems with backside isolation trenches | |
US9515105B2 (en) | Dual photodiode image pixels with preferential blooming path | |
KR100971082B1 (ko) | 적색 픽셀 상의 캐패시터를 가진 고체 이미저 | |
US9711554B2 (en) | Image sensor | |
US10070079B2 (en) | High dynamic range global shutter image sensors having high shutter efficiency | |
US10438989B2 (en) | Stack-type image sensor | |
US9728575B1 (en) | Pixel and circuit design for image sensors with hole-based photodiodes | |
US10096632B2 (en) | Image sensor | |
KR20160022087A (ko) | 이미지 센서의 단위 픽셀과 이를 포함하는 픽셀 어레이 | |
JP2011138841A (ja) | 固体撮像装置および撮像システム | |
KR102591008B1 (ko) | 이미지 센서 | |
US20120104523A1 (en) | Solid-state imaging device manufacturing method of solid-state imaging device, and electronic apparatus | |
KR20210054092A (ko) | 서로 거울 대칭인 픽셀들을 포함하는 이미지 센서 | |
US20200135795A1 (en) | Stacked-die image sensors with shielding | |
CN210093338U (zh) | 图像传感器 | |
US11330201B2 (en) | Light sensing circuit and image sensor including the same | |
US20210152770A1 (en) | Systems and methods for generating time trace information | |
JP2017188615A (ja) | 固体撮像装置 |