TWI894187B - 基板處理方法及基板處理裝置 - Google Patents

基板處理方法及基板處理裝置

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Publication number
TWI894187B
TWI894187B TW109143749A TW109143749A TWI894187B TW I894187 B TWI894187 B TW I894187B TW 109143749 A TW109143749 A TW 109143749A TW 109143749 A TW109143749 A TW 109143749A TW I894187 B TWI894187 B TW I894187B
Authority
TW
Taiwan
Prior art keywords
mask
film
gas
substrate processing
processing method
Prior art date
Application number
TW109143749A
Other languages
English (en)
Chinese (zh)
Other versions
TW202129756A (zh
Inventor
西出大亮
勝沼隆幸
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202129756A publication Critical patent/TW202129756A/zh
Application granted granted Critical
Publication of TWI894187B publication Critical patent/TWI894187B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
TW109143749A 2019-12-25 2020-12-11 基板處理方法及基板處理裝置 TWI894187B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-233668 2019-12-25
JP2019233668A JP7333752B2 (ja) 2019-12-25 2019-12-25 基板処理方法及び基板処理装置

Publications (2)

Publication Number Publication Date
TW202129756A TW202129756A (zh) 2021-08-01
TWI894187B true TWI894187B (zh) 2025-08-21

Family

ID=76459255

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109143749A TWI894187B (zh) 2019-12-25 2020-12-11 基板處理方法及基板處理裝置

Country Status (5)

Country Link
US (1) US11501975B2 (https=)
JP (1) JP7333752B2 (https=)
KR (1) KR20210082384A (https=)
CN (1) CN113035708B (https=)
TW (1) TWI894187B (https=)

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KR102898977B1 (ko) 2021-12-13 2025-12-11 삼성전자주식회사 플라즈마 식각 장치, 이를 이용한 플라즈마 식각 방법 및 이를 이용한 반도체 소자 제조 방법
KR20250044885A (ko) * 2022-07-29 2025-04-01 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 시스템
KR20240128194A (ko) * 2023-02-17 2024-08-26 피에스케이 주식회사 기판 처리 방법 및 장치
WO2025018161A1 (ja) * 2023-07-18 2025-01-23 東京エレクトロン株式会社 エッチング方法及びエッチング装置

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JP2015170763A (ja) * 2014-03-07 2015-09-28 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2017143194A (ja) * 2016-02-10 2017-08-17 Ｓｐｐテクノロジーズ株式会社 半導体素子の製造方法

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JP4722550B2 (ja) * 2004-06-16 2011-07-13 東京エレクトロン株式会社 半導体装置の製造方法
JP2006060044A (ja) * 2004-08-20 2006-03-02 Canon Anelva Corp 磁気抵抗効果素子の製造方法
KR100606540B1 (ko) * 2004-12-22 2006-08-01 동부일렉트로닉스 주식회사 반도체 소자의 구리 배선 형성 방법
JP4652140B2 (ja) * 2005-06-21 2011-03-16 東京エレクトロン株式会社 プラズマエッチング方法、制御プログラム、コンピュータ記憶媒体
US7902078B2 (en) * 2006-02-17 2011-03-08 Tokyo Electron Limited Processing method and plasma etching method
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JP2013077594A (ja) * 2011-09-29 2013-04-25 Tokyo Electron Ltd プラズマエッチング方法及び半導体装置の製造方法
JP2015170763A (ja) * 2014-03-07 2015-09-28 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2017143194A (ja) * 2016-02-10 2017-08-17 Ｓｐｐテクノロジーズ株式会社 半導体素子の製造方法

Also Published As

Publication number Publication date
JP2021103710A (ja) 2021-07-15
KR20210082384A (ko) 2021-07-05
US20210202262A1 (en) 2021-07-01
CN113035708B (zh) 2025-09-12
CN113035708A (zh) 2021-06-25
JP7333752B2 (ja) 2023-08-25
TW202129756A (zh) 2021-08-01
US11501975B2 (en) 2022-11-15

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