KR20210082384A - 기판 처리 방법 및 기판 처리 장치 - Google Patents

기판 처리 방법 및 기판 처리 장치 Download PDF

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Publication number
KR20210082384A
KR20210082384A KR1020200183198A KR20200183198A KR20210082384A KR 20210082384 A KR20210082384 A KR 20210082384A KR 1020200183198 A KR1020200183198 A KR 1020200183198A KR 20200183198 A KR20200183198 A KR 20200183198A KR 20210082384 A KR20210082384 A KR 20210082384A
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KR
South Korea
Prior art keywords
mask
film
gas
etched
substrate
Prior art date
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Pending
Application number
KR1020200183198A
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English (en)
Korean (ko)
Inventor
다이스케 니시데
다카유키 가츠누마
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20210082384A publication Critical patent/KR20210082384A/ko
Pending legal-status Critical Current

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    • H01L21/31144—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01L21/0332—
    • H01L21/0337—
    • H01L21/31116—
    • H01L21/67069—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR1020200183198A 2019-12-25 2020-12-24 기판 처리 방법 및 기판 처리 장치 Pending KR20210082384A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2019-233668 2019-12-25
JP2019233668A JP7333752B2 (ja) 2019-12-25 2019-12-25 基板処理方法及び基板処理装置

Publications (1)

Publication Number Publication Date
KR20210082384A true KR20210082384A (ko) 2021-07-05

Family

ID=76459255

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020200183198A Pending KR20210082384A (ko) 2019-12-25 2020-12-24 기판 처리 방법 및 기판 처리 장치

Country Status (5)

Country Link
US (1) US11501975B2 (https=)
JP (1) JP7333752B2 (https=)
KR (1) KR20210082384A (https=)
CN (1) CN113035708B (https=)
TW (1) TWI894187B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024172417A1 (ko) * 2023-02-17 2024-08-22 피에스케이 주식회사 기판 처리 방법 및 장치

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102898977B1 (ko) 2021-12-13 2025-12-11 삼성전자주식회사 플라즈마 식각 장치, 이를 이용한 플라즈마 식각 방법 및 이를 이용한 반도체 소자 제조 방법
KR20250044885A (ko) * 2022-07-29 2025-04-01 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 시스템
WO2025018161A1 (ja) * 2023-07-18 2025-01-23 東京エレクトロン株式会社 エッチング方法及びエッチング装置

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JP4722550B2 (ja) * 2004-06-16 2011-07-13 東京エレクトロン株式会社 半導体装置の製造方法
JP2006060044A (ja) * 2004-08-20 2006-03-02 Canon Anelva Corp 磁気抵抗効果素子の製造方法
KR100606540B1 (ko) * 2004-12-22 2006-08-01 동부일렉트로닉스 주식회사 반도체 소자의 구리 배선 형성 방법
JP4652140B2 (ja) * 2005-06-21 2011-03-16 東京エレクトロン株式会社 プラズマエッチング方法、制御プログラム、コンピュータ記憶媒体
US7902078B2 (en) * 2006-02-17 2011-03-08 Tokyo Electron Limited Processing method and plasma etching method
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Publication number Publication date
JP2021103710A (ja) 2021-07-15
US20210202262A1 (en) 2021-07-01
CN113035708B (zh) 2025-09-12
TWI894187B (zh) 2025-08-21
CN113035708A (zh) 2021-06-25
JP7333752B2 (ja) 2023-08-25
TW202129756A (zh) 2021-08-01
US11501975B2 (en) 2022-11-15

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