CN113035708B - 基片处理方法和基片处理装置 - Google Patents

基片处理方法和基片处理装置

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Publication number
CN113035708B
CN113035708B CN202011472515.3A CN202011472515A CN113035708B CN 113035708 B CN113035708 B CN 113035708B CN 202011472515 A CN202011472515 A CN 202011472515A CN 113035708 B CN113035708 B CN 113035708B
Authority
CN
China
Prior art keywords
mask
film
gas
etched
substrate processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202011472515.3A
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English (en)
Chinese (zh)
Other versions
CN113035708A (zh
Inventor
西出大亮
胜沼隆幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN113035708A publication Critical patent/CN113035708A/zh
Application granted granted Critical
Publication of CN113035708B publication Critical patent/CN113035708B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
CN202011472515.3A 2019-12-25 2020-12-15 基片处理方法和基片处理装置 Active CN113035708B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-233668 2019-12-25
JP2019233668A JP7333752B2 (ja) 2019-12-25 2019-12-25 基板処理方法及び基板処理装置

Publications (2)

Publication Number Publication Date
CN113035708A CN113035708A (zh) 2021-06-25
CN113035708B true CN113035708B (zh) 2025-09-12

Family

ID=76459255

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011472515.3A Active CN113035708B (zh) 2019-12-25 2020-12-15 基片处理方法和基片处理装置

Country Status (5)

Country Link
US (1) US11501975B2 (https=)
JP (1) JP7333752B2 (https=)
KR (1) KR20210082384A (https=)
CN (1) CN113035708B (https=)
TW (1) TWI894187B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102898977B1 (ko) 2021-12-13 2025-12-11 삼성전자주식회사 플라즈마 식각 장치, 이를 이용한 플라즈마 식각 방법 및 이를 이용한 반도체 소자 제조 방법
KR20250044885A (ko) * 2022-07-29 2025-04-01 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 시스템
KR20240128194A (ko) * 2023-02-17 2024-08-26 피에스케이 주식회사 기판 처리 방법 및 장치
WO2025018161A1 (ja) * 2023-07-18 2025-01-23 東京エレクトロン株式会社 エッチング方法及びエッチング装置

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JPH01194325A (ja) * 1988-01-29 1989-08-04 Toshiba Corp ドライエッチング方法
US6569774B1 (en) * 2000-08-31 2003-05-27 Micron Technology, Inc. Method to eliminate striations and surface roughness caused by dry etch
JP3962339B2 (ja) * 2002-03-27 2007-08-22 松下電器産業株式会社 電子デバイスの製造方法
JP4722550B2 (ja) * 2004-06-16 2011-07-13 東京エレクトロン株式会社 半導体装置の製造方法
JP2006060044A (ja) * 2004-08-20 2006-03-02 Canon Anelva Corp 磁気抵抗効果素子の製造方法
KR100606540B1 (ko) * 2004-12-22 2006-08-01 동부일렉트로닉스 주식회사 반도체 소자의 구리 배선 형성 방법
JP4652140B2 (ja) * 2005-06-21 2011-03-16 東京エレクトロン株式会社 プラズマエッチング方法、制御プログラム、コンピュータ記憶媒体
US7902078B2 (en) * 2006-02-17 2011-03-08 Tokyo Electron Limited Processing method and plasma etching method
US7786019B2 (en) * 2006-12-18 2010-08-31 Applied Materials, Inc. Multi-step photomask etching with chlorine for uniformity control
CN101295643B (zh) * 2007-04-24 2010-05-19 中芯国际集成电路制造(上海)有限公司 通孔刻蚀方法及通孔掩膜
JP2009044090A (ja) * 2007-08-10 2009-02-26 Tokyo Electron Ltd 半導体装置の製造方法及び記憶媒体
JP5067068B2 (ja) * 2007-08-17 2012-11-07 東京エレクトロン株式会社 半導体装置の製造方法及び記憶媒体
KR20110028506A (ko) * 2008-06-17 2011-03-18 가부시키가이샤 알박 다단형 기판의 제조 방법
JP2010135624A (ja) * 2008-12-05 2010-06-17 Tokyo Electron Ltd 半導体装置の製造方法
CN101800174A (zh) * 2010-02-11 2010-08-11 中微半导体设备(上海)有限公司 一种含碳层的等离子刻蚀方法
US8476168B2 (en) * 2011-01-26 2013-07-02 International Business Machines Corporation Non-conformal hardmask deposition for through silicon etch
JP5981106B2 (ja) * 2011-07-12 2016-08-31 東京エレクトロン株式会社 プラズマエッチング方法
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US9666414B2 (en) * 2011-10-27 2017-05-30 Applied Materials, Inc. Process chamber for etching low k and other dielectric films
JP2013258244A (ja) * 2012-06-12 2013-12-26 Tokyo Electron Ltd エッチング方法及びプラズマ処理装置
US20150079760A1 (en) * 2013-09-19 2015-03-19 Wei-Sheng Lei Alternating masking and laser scribing approach for wafer dicing using laser scribing and plasma etch
JP2015170763A (ja) * 2014-03-07 2015-09-28 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6486092B2 (ja) * 2014-12-11 2019-03-20 東京エレクトロン株式会社 プラズマエッチング方法
JP6584339B2 (ja) * 2016-02-10 2019-10-02 Ｓｐｐテクノロジーズ株式会社 半導体素子の製造方法
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JP6836953B2 (ja) 2016-12-13 2021-03-03 東京エレクトロン株式会社 窒化シリコンから形成された第１領域を酸化シリコンから形成された第２領域に対して選択的にエッチングする方法
KR102904323B1 (ko) * 2019-02-27 2025-12-24 램 리써치 코포레이션 희생 층을 사용한 반도체 마스크 재성형
CN112151608B (zh) * 2019-06-28 2023-12-15 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法

Also Published As

Publication number Publication date
JP2021103710A (ja) 2021-07-15
KR20210082384A (ko) 2021-07-05
US20210202262A1 (en) 2021-07-01
TWI894187B (zh) 2025-08-21
CN113035708A (zh) 2021-06-25
JP7333752B2 (ja) 2023-08-25
TW202129756A (zh) 2021-08-01
US11501975B2 (en) 2022-11-15

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