TWI877955B - 含有次氯酸離子的半導體晶圓處理液 - Google Patents

含有次氯酸離子的半導體晶圓處理液 Download PDF

Info

Publication number
TWI877955B
TWI877955B TW112149234A TW112149234A TWI877955B TW I877955 B TWI877955 B TW I877955B TW 112149234 A TW112149234 A TW 112149234A TW 112149234 A TW112149234 A TW 112149234A TW I877955 B TWI877955 B TW I877955B
Authority
TW
Taiwan
Prior art keywords
ions
hypochlorous acid
solution
treatment solution
exchange resin
Prior art date
Application number
TW112149234A
Other languages
English (en)
Chinese (zh)
Other versions
TW202417601A (zh
Inventor
下田享史
根岸貴幸
吉川由樹
東野誠司
Original Assignee
日商德山股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商德山股份有限公司 filed Critical 日商德山股份有限公司
Publication of TW202417601A publication Critical patent/TW202417601A/zh
Application granted granted Critical
Publication of TWI877955B publication Critical patent/TWI877955B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/046—Salts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
    • C11D17/0008—Detergent materials or soaps characterised by their shape or physical properties aqueous liquid non soap compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
    • C11D17/08—Liquid soap, e.g. for dispensers; capsuled
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/168—Organometallic compounds or orgometallic complexes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/24—Organic compounds containing halogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/28—Organic compounds containing halogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54—Cleaning of wafer edges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/56—Cleaning of wafer backside
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
TW112149234A 2018-01-16 2019-01-16 含有次氯酸離子的半導體晶圓處理液 TWI877955B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2018-005202 2018-01-16
JP2018005201 2018-01-16
JP2018005202 2018-01-16
JP2018-005201 2018-01-16
JP2018199949 2018-10-24
JP2018-199949 2018-10-24

Publications (2)

Publication Number Publication Date
TW202417601A TW202417601A (zh) 2024-05-01
TWI877955B true TWI877955B (zh) 2025-03-21

Family

ID=67301793

Family Applications (4)

Application Number Title Priority Date Filing Date
TW112149234A TWI877955B (zh) 2018-01-16 2019-01-16 含有次氯酸離子的半導體晶圓處理液
TW114106215A TWI899006B (zh) 2018-01-16 2019-01-16 含有次氯酸離子的半導體晶圓處理液
TW108101608A TW201932588A (zh) 2018-01-16 2019-01-16 含有次氯酸離子的半導體晶圓處理液
TW110141481A TWI843026B (zh) 2018-01-16 2019-01-16 含有次氯酸離子的半導體晶圓處理液

Family Applications After (3)

Application Number Title Priority Date Filing Date
TW114106215A TWI899006B (zh) 2018-01-16 2019-01-16 含有次氯酸離子的半導體晶圓處理液
TW108101608A TW201932588A (zh) 2018-01-16 2019-01-16 含有次氯酸離子的半導體晶圓處理液
TW110141481A TWI843026B (zh) 2018-01-16 2019-01-16 含有次氯酸離子的半導體晶圓處理液

Country Status (8)

Country Link
US (2) US11390829B2 (https=)
EP (1) EP3726565A4 (https=)
JP (3) JP6798045B2 (https=)
KR (2) KR102766830B1 (https=)
CN (1) CN111684570B (https=)
SG (1) SG11202006733TA (https=)
TW (4) TWI877955B (https=)
WO (1) WO2019142788A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111684570B (zh) 2018-01-16 2024-02-27 株式会社德山 含有次氯酸根离子的半导体晶圆的处理液
US11572533B2 (en) * 2018-05-23 2023-02-07 Tokuyama Corporation Quaternary alkylammonium hypochlorite solution, method for manufacturing same, and method for cleaning semiconductor wafer
JP7219061B2 (ja) 2018-11-14 2023-02-07 関東化学株式会社 ルテニウム除去用組成物
JP6874231B1 (ja) 2019-09-27 2021-05-19 株式会社トクヤマ ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法
JP7050184B2 (ja) 2019-09-27 2022-04-07 株式会社トクヤマ ルテニウムの半導体用処理液及びその製造方法
KR102769981B1 (ko) * 2019-11-22 2025-02-18 가부시끼가이샤 도꾸야마 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법
KR102582791B1 (ko) * 2020-02-25 2023-09-25 가부시끼가이샤 도꾸야마 루테늄의 반도체용 처리액
TWI901664B (zh) 2020-03-31 2025-10-21 日商德山股份有限公司 半導體用處理液及其製造方法
JP7375032B2 (ja) 2020-08-07 2023-11-07 株式会社トクヤマ 半導体ウエハ用処理液
WO2022050273A1 (ja) * 2020-09-03 2022-03-10 富士フイルム株式会社 組成物、基板の処理方法
JP7819114B2 (ja) 2020-11-26 2026-02-24 株式会社トクヤマ 半導体ウェハの処理液及びその製造方法
JP7342288B2 (ja) * 2020-12-18 2023-09-11 株式会社トクヤマ 遷移金属の半導体の処理方法、および遷移金属酸化物の還元剤含有処理液
KR20230104741A (ko) 2020-12-18 2023-07-10 가부시끼가이샤 도꾸야마 천이 금속의 반도체의 처리 방법, 및 천이 금속 산화물의 환원제 함유 처리액
JP7638119B2 (ja) * 2021-03-15 2025-03-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US20220328320A1 (en) 2021-03-31 2022-10-13 Tokuyama Corporation Semiconductor treatment liquid
TW202424172A (zh) * 2022-09-29 2024-06-16 日商德山股份有限公司 乾式蝕刻殘渣去除液
US20250084309A1 (en) * 2022-10-03 2025-03-13 Tokuyama Corporation Semiconductor processing solution
WO2026004729A1 (ja) * 2024-06-28 2026-01-02 株式会社トクヤマ 半導体用基板の処理液

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201641660A (zh) * 2015-03-04 2016-12-01 日立化成股份有限公司 Cmp用研磨液及使用其的研磨方法

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2517187C3 (de) 1975-04-18 1980-11-13 Aeg-Kanis Turbinenfabrik Gmbh, 8500 Nuernberg Hydraulische Turbinendrehvorrichtung
JPS5523325U (https=) 1978-07-28 1980-02-15
IT1203814B (it) * 1986-06-30 1989-02-23 Fidia Farmaceutici Esteri dell'acido alginico
GB9005873D0 (en) * 1990-03-15 1990-05-09 Unilever Plc Bleaching composition
JP3649771B2 (ja) * 1995-05-15 2005-05-18 栗田工業株式会社 洗浄方法
JP3619745B2 (ja) * 1999-12-20 2005-02-16 株式会社日立製作所 固体表面の処理方法及び処理液並びにこれらを用いた電子デバイスの製造方法
JP2001231373A (ja) 2000-02-22 2001-08-28 Gumma Prefecture 植物の栽培方法及びその装置
JP4510979B2 (ja) 2000-02-23 2010-07-28 ルネサスエレクトロニクス株式会社 ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法
JP3664967B2 (ja) 2000-10-20 2005-06-29 シャープ株式会社 半導体集積回路
JP3585437B2 (ja) 2000-11-22 2004-11-04 株式会社荏原製作所 ルテニウム膜のエッチング方法
JP2003119494A (ja) * 2001-10-05 2003-04-23 Nec Corp 洗浄組成物およびこれを用いた洗浄方法と洗浄装置
JP2005101479A (ja) * 2002-11-08 2005-04-14 Sumitomo Chemical Co Ltd 半導体基板用洗浄液
KR20040041019A (ko) * 2002-11-08 2004-05-13 스미또모 가가꾸 고오교오 가부시끼가이샤 반도체 기판용 세정액
JP4232002B2 (ja) * 2003-01-16 2009-03-04 日本電気株式会社 デバイス基板用の洗浄組成物及び該洗浄組成物を用いた洗浄方法並びに洗浄装置
PT1664935E (pt) * 2003-08-19 2008-01-10 Mallinckrodt Baker Inc Composições de decapagem e limpeza para micro electrónica
BRPI0418529A (pt) * 2004-02-11 2007-05-15 Mallinckrodt Baker Inc composições de limpeza para microeletrÈnicos contendo ácidos de halogênio oxigenados, sais e derivados dos mesmos
WO2008114309A1 (ja) 2007-03-16 2008-09-25 Fujitsu Limited シリコン系絶縁膜のエッチング後処理剤、半導体装置の製造方法および半導体装置
JP2009081247A (ja) 2007-09-26 2009-04-16 Panasonic Corp ルテニウム膜のエッチング方法
TW200946621A (en) * 2007-10-29 2009-11-16 Ekc Technology Inc Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use
KR101569338B1 (ko) * 2007-11-13 2015-11-17 사켐,인코포레이티드 손상 없이 반도체를 습식 세척하기 위한 높은 네거티브 제타 전위 다면체 실세스퀴옥산 조성물과 방법
JP2009231354A (ja) * 2008-03-19 2009-10-08 Fujifilm Corp 半導体デバイス用洗浄液、および洗浄方法
JP5086893B2 (ja) * 2008-05-26 2012-11-28 花王株式会社 半導体デバイス用基板用の洗浄液
KR101282177B1 (ko) 2008-09-09 2013-07-04 쇼와 덴코 가부시키가이샤 티탄계 금속, 텅스텐계 금속, 티탄-텅스텐계 금속 또는 그것들의 질화물의 에칭액
WO2011074601A1 (ja) * 2009-12-17 2011-06-23 昭和電工株式会社 ルテニウム系金属のエッチング用組成物およびその調製方法
CN102234597B (zh) * 2010-04-26 2015-05-27 东友精细化工有限公司 清洗组合物
US8211800B2 (en) * 2010-08-23 2012-07-03 Kabushiki Kaisha Toshiba Ru cap metal post cleaning method and cleaning chemical
JP2013001620A (ja) * 2011-06-20 2013-01-07 Evatech Corp 弱酸性次亜塩素酸、並びにその製造装置および製造方法
KR102102792B1 (ko) * 2011-12-28 2020-05-29 엔테그리스, 아이엔씨. 티타늄 나이트라이드의 선택적인 에칭을 위한 조성물 및 방법
JP2014062297A (ja) * 2012-09-20 2014-04-10 Toshiba Corp 処理装置、処理液の製造方法、および電子デバイスの製造方法
US10472567B2 (en) * 2013-03-04 2019-11-12 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
KR102338550B1 (ko) * 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
KR102405063B1 (ko) * 2014-06-30 2022-06-07 엔테그리스, 아이엔씨. 텅스텐 및 코발트 상용성을 갖는 에치후 잔류물을 제거하기 위한 수성 및 반-수성 세정제
WO2016042408A2 (en) * 2014-09-17 2016-03-24 Atmi Taiwan Co., Ltd. Compositions for etching titanium nitride having compatability with silicon germanide and tungsten
WO2016069576A1 (en) * 2014-10-31 2016-05-06 Entegris, Inc. Non-amine post-cmp compositions and method of use
CN106796878B (zh) * 2014-11-13 2021-02-09 三菱瓦斯化学株式会社 抑制了包含钨的材料的损伤的半导体元件的清洗液、及使用其的半导体元件的清洗方法
TWI816635B (zh) * 2015-10-15 2023-10-01 日商三菱瓦斯化學股份有限公司 半導體元件之洗淨用液體組成物、半導體元件之洗淨方法及半導體元件之製造方法
JP6713044B2 (ja) 2016-06-02 2020-06-24 富士フイルム株式会社 処理液、基板の洗浄方法及びレジストの除去方法
US10790187B2 (en) * 2017-01-17 2020-09-29 Entegris, Inc. Post-etch residue removal for advanced node beol processing
CN111684570B (zh) 2018-01-16 2024-02-27 株式会社德山 含有次氯酸根离子的半导体晶圆的处理液
US11017995B2 (en) * 2018-07-26 2021-05-25 Versum Materials Us, Llc Composition for TiN hard mask removal and etch residue cleaning
US11085011B2 (en) * 2018-08-28 2021-08-10 Entegris, Inc. Post CMP cleaning compositions for ceria particles
WO2020049955A1 (ja) * 2018-09-06 2020-03-12 富士フイルム株式会社 薬液、基板の処理方法
KR102521227B1 (ko) * 2018-09-12 2023-04-13 후지필름 가부시키가이샤 약액, 기판의 처리 방법
US11898081B2 (en) * 2019-11-21 2024-02-13 Tokyo Ohka Kogyo Co., Ltd. Ruthenium-etching solution, method for manufacturing ruthenium-etching solution, method for processing object to be processed, and method for manufacturing ruthenium-containing wiring
KR102769981B1 (ko) * 2019-11-22 2025-02-18 가부시끼가이샤 도꾸야마 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201641660A (zh) * 2015-03-04 2016-12-01 日立化成股份有限公司 Cmp用研磨液及使用其的研磨方法

Also Published As

Publication number Publication date
EP3726565A4 (en) 2021-10-13
WO2019142788A1 (ja) 2019-07-25
KR20200110335A (ko) 2020-09-23
EP3726565A1 (en) 2020-10-21
JPWO2019142788A1 (ja) 2020-11-19
US12612580B2 (en) 2026-04-28
JP7590504B2 (ja) 2024-11-26
US20220325205A1 (en) 2022-10-13
KR20250022896A (ko) 2025-02-17
US11390829B2 (en) 2022-07-19
CN111684570B (zh) 2024-02-27
JP2023126320A (ja) 2023-09-07
JP6798045B2 (ja) 2020-12-09
JP2021040151A (ja) 2021-03-11
US20210062115A1 (en) 2021-03-04
TW202417601A (zh) 2024-05-01
TW202521677A (zh) 2025-06-01
CN111684570A (zh) 2020-09-18
TWI899006B (zh) 2025-09-21
SG11202006733TA (en) 2020-08-28
TW201932588A (zh) 2019-08-16
TWI843026B (zh) 2024-05-21
KR102766830B1 (ko) 2025-02-14
TW202210663A (zh) 2022-03-16
JP7311477B2 (ja) 2023-07-19

Similar Documents

Publication Publication Date Title
TWI877955B (zh) 含有次氯酸離子的半導體晶圓處理液
EP3926662B1 (en) Onium salt-containing processing solution for semiconductor wafers
JP7646887B2 (ja) 次亜塩素酸イオン、及びｐＨ緩衝剤を含む半導体ウェハの処理液
KR102812765B1 (ko) 차아염소산 제4급 알킬 암모늄 용액
JP7735233B2 (ja) 半導体ウエハ用処理液
TWI678601B (zh) 可抑制含鎢材料之損壞的半導體元件之清洗液及利用該清洗液的半導體元件之清洗方法
KR102769981B1 (ko) 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법
KR20220136262A (ko) 반도체용 처리액
JP2010010273A (ja) 窒化チタン除去液、窒化チタン被膜の除去方法、及び窒化チタン除去液の製造方法
CN100463117C (zh) 半导体元件清洗用组合物、半导体元件及其制造方法
TW201938480A (zh) 氧化鋁之保護液、保護方法及使用此保護方法之具有氧化鋁層之半導體基板之製造方法
JP7081010B2 (ja) オニウム塩を含む半導体ウェハの処理液
US20150144160A1 (en) Etchant, preparation thereof and method of using the same in the cleaning process