TW201938480A - 氧化鋁之保護液、保護方法及使用此保護方法之具有氧化鋁層之半導體基板之製造方法 - Google Patents
氧化鋁之保護液、保護方法及使用此保護方法之具有氧化鋁層之半導體基板之製造方法 Download PDFInfo
- Publication number
- TW201938480A TW201938480A TW108106683A TW108106683A TW201938480A TW 201938480 A TW201938480 A TW 201938480A TW 108106683 A TW108106683 A TW 108106683A TW 108106683 A TW108106683 A TW 108106683A TW 201938480 A TW201938480 A TW 201938480A
- Authority
- TW
- Taiwan
- Prior art keywords
- barium
- alumina
- strontium
- magnesium
- beryllium
- Prior art date
Links
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title claims abstract description 154
- 239000004065 semiconductor Substances 0.000 title claims abstract description 53
- 239000000758 substrate Substances 0.000 title claims abstract description 47
- 230000001681 protective effect Effects 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000012530 fluid Substances 0.000 title abstract 3
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 22
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052788 barium Inorganic materials 0.000 claims abstract description 8
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 4
- 239000011777 magnesium Substances 0.000 claims abstract description 4
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000007788 liquid Substances 0.000 claims description 47
- -1 beryllium peroxide Chemical class 0.000 claims description 18
- 150000001341 alkaline earth metal compounds Chemical class 0.000 claims description 16
- 239000002253 acid Substances 0.000 claims description 14
- IWOUKMZUPDVPGQ-UHFFFAOYSA-N barium nitrate Chemical compound [Ba+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O IWOUKMZUPDVPGQ-UHFFFAOYSA-N 0.000 claims description 14
- 150000003839 salts Chemical class 0.000 claims description 13
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 claims description 11
- 229910001863 barium hydroxide Inorganic materials 0.000 claims description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 8
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 claims description 8
- ITHZDDVSAWDQPZ-UHFFFAOYSA-L barium acetate Chemical compound [Ba+2].CC([O-])=O.CC([O-])=O ITHZDDVSAWDQPZ-UHFFFAOYSA-L 0.000 claims description 7
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 claims description 7
- 229910001626 barium chloride Inorganic materials 0.000 claims description 7
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 claims description 6
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 claims description 6
- LWBPNIJBHRISSS-UHFFFAOYSA-L beryllium dichloride Chemical compound Cl[Be]Cl LWBPNIJBHRISSS-UHFFFAOYSA-L 0.000 claims description 6
- WPJWIROQQFWMMK-UHFFFAOYSA-L beryllium dihydroxide Chemical compound [Be+2].[OH-].[OH-] WPJWIROQQFWMMK-UHFFFAOYSA-L 0.000 claims description 6
- 229910001865 beryllium hydroxide Inorganic materials 0.000 claims description 6
- RFVVBBUVWAIIBT-UHFFFAOYSA-N beryllium nitrate Chemical compound [Be+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O RFVVBBUVWAIIBT-UHFFFAOYSA-N 0.000 claims description 6
- KQHXBDOEECKORE-UHFFFAOYSA-L beryllium sulfate Chemical compound [Be+2].[O-]S([O-])(=O)=O KQHXBDOEECKORE-UHFFFAOYSA-L 0.000 claims description 6
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 claims description 6
- 239000000347 magnesium hydroxide Substances 0.000 claims description 6
- 229910001862 magnesium hydroxide Inorganic materials 0.000 claims description 6
- YIXJRHPUWRPCBB-UHFFFAOYSA-N magnesium nitrate Chemical compound [Mg+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O YIXJRHPUWRPCBB-UHFFFAOYSA-N 0.000 claims description 6
- UUCCCPNEFXQJEL-UHFFFAOYSA-L strontium dihydroxide Chemical compound [OH-].[OH-].[Sr+2] UUCCCPNEFXQJEL-UHFFFAOYSA-L 0.000 claims description 6
- 229910001866 strontium hydroxide Inorganic materials 0.000 claims description 6
- DHEQXMRUPNDRPG-UHFFFAOYSA-N strontium nitrate Chemical compound [Sr+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O DHEQXMRUPNDRPG-UHFFFAOYSA-N 0.000 claims description 6
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims description 6
- UBXAKNTVXQMEAG-UHFFFAOYSA-L strontium sulfate Chemical compound [Sr+2].[O-]S([O-])(=O)=O UBXAKNTVXQMEAG-UHFFFAOYSA-L 0.000 claims description 6
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 4
- NKQIMNKPSDEDMO-UHFFFAOYSA-L barium bromide Chemical compound [Br-].[Br-].[Ba+2] NKQIMNKPSDEDMO-UHFFFAOYSA-L 0.000 claims description 4
- 229910001620 barium bromide Inorganic materials 0.000 claims description 4
- ISFLYIRWQDJPDR-UHFFFAOYSA-L barium chlorate Chemical compound [Ba+2].[O-]Cl(=O)=O.[O-]Cl(=O)=O ISFLYIRWQDJPDR-UHFFFAOYSA-L 0.000 claims description 4
- QFFVPLLCYGOFPU-UHFFFAOYSA-N barium chromate Chemical compound [Ba+2].[O-][Cr]([O-])(=O)=O QFFVPLLCYGOFPU-UHFFFAOYSA-N 0.000 claims description 4
- 229940083898 barium chromate Drugs 0.000 claims description 4
- UNLSXXHOHZUADN-UHFFFAOYSA-N barium cyanide Chemical compound [Ba+2].N#[C-].N#[C-] UNLSXXHOHZUADN-UHFFFAOYSA-N 0.000 claims description 4
- SGUXGJPBTNFBAD-UHFFFAOYSA-L barium iodide Chemical compound [I-].[I-].[Ba+2] SGUXGJPBTNFBAD-UHFFFAOYSA-L 0.000 claims description 4
- 229910001638 barium iodide Inorganic materials 0.000 claims description 4
- 229940075444 barium iodide Drugs 0.000 claims description 4
- OOULUYZFLXDWDQ-UHFFFAOYSA-L barium perchlorate Chemical compound [Ba+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O OOULUYZFLXDWDQ-UHFFFAOYSA-L 0.000 claims description 4
- ZJRXSAYFZMGQFP-UHFFFAOYSA-N barium peroxide Chemical compound [Ba+2].[O-][O-] ZJRXSAYFZMGQFP-UHFFFAOYSA-N 0.000 claims description 4
- CJDPJFRMHVXWPT-UHFFFAOYSA-N barium sulfide Chemical compound [S-2].[Ba+2] CJDPJFRMHVXWPT-UHFFFAOYSA-N 0.000 claims description 4
- ARSLNKYOPNUFFY-UHFFFAOYSA-L barium sulfite Chemical compound [Ba+2].[O-]S([O-])=O ARSLNKYOPNUFFY-UHFFFAOYSA-L 0.000 claims description 4
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 claims description 4
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims description 3
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims description 3
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 claims description 3
- MPCRDALPQLDDFX-UHFFFAOYSA-L Magnesium perchlorate Chemical compound [Mg+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O MPCRDALPQLDDFX-UHFFFAOYSA-L 0.000 claims description 3
- SPAGIJMPHSUYSE-UHFFFAOYSA-N Magnesium peroxide Chemical compound [Mg+2].[O-][O-] SPAGIJMPHSUYSE-UHFFFAOYSA-N 0.000 claims description 3
- PBKYCFJFZMEFRS-UHFFFAOYSA-L beryllium bromide Chemical compound [Be+2].[Br-].[Br-] PBKYCFJFZMEFRS-UHFFFAOYSA-L 0.000 claims description 3
- 229910001621 beryllium bromide Inorganic materials 0.000 claims description 3
- ZBUQRSWEONVBES-UHFFFAOYSA-L beryllium carbonate Chemical compound [Be+2].[O-]C([O-])=O ZBUQRSWEONVBES-UHFFFAOYSA-L 0.000 claims description 3
- 229910000023 beryllium carbonate Inorganic materials 0.000 claims description 3
- 229910001627 beryllium chloride Inorganic materials 0.000 claims description 3
- 229910001639 beryllium iodide Inorganic materials 0.000 claims description 3
- JUCWKFHIHJQTFR-UHFFFAOYSA-L beryllium iodide Chemical compound [Be+2].[I-].[I-] JUCWKFHIHJQTFR-UHFFFAOYSA-L 0.000 claims description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 3
- FQDSYGKTHDFFCM-UHFFFAOYSA-N beryllium sulfide Chemical compound S=[Be] FQDSYGKTHDFFCM-UHFFFAOYSA-N 0.000 claims description 3
- YUOUKRIPFJKDJY-UHFFFAOYSA-L beryllium;diacetate Chemical compound [Be+2].CC([O-])=O.CC([O-])=O YUOUKRIPFJKDJY-UHFFFAOYSA-L 0.000 claims description 3
- MVTQSBYPNJATTN-UHFFFAOYSA-L beryllium;diperchlorate Chemical compound [Be+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O MVTQSBYPNJATTN-UHFFFAOYSA-L 0.000 claims description 3
- 229910001919 chlorite Inorganic materials 0.000 claims description 3
- 229910052619 chlorite group Inorganic materials 0.000 claims description 3
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 claims description 3
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 claims description 3
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 claims description 3
- UEGPKNKPLBYCNK-UHFFFAOYSA-L magnesium acetate Chemical compound [Mg+2].CC([O-])=O.CC([O-])=O UEGPKNKPLBYCNK-UHFFFAOYSA-L 0.000 claims description 3
- 239000011654 magnesium acetate Substances 0.000 claims description 3
- 235000011285 magnesium acetate Nutrition 0.000 claims description 3
- 229940069446 magnesium acetate Drugs 0.000 claims description 3
- OTCKOJUMXQWKQG-UHFFFAOYSA-L magnesium bromide Chemical compound [Mg+2].[Br-].[Br-] OTCKOJUMXQWKQG-UHFFFAOYSA-L 0.000 claims description 3
- 229910001623 magnesium bromide Inorganic materials 0.000 claims description 3
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 claims description 3
- 239000001095 magnesium carbonate Substances 0.000 claims description 3
- 229910000021 magnesium carbonate Inorganic materials 0.000 claims description 3
- 229910001629 magnesium chloride Inorganic materials 0.000 claims description 3
- FKWSMBAMOQCVPV-UHFFFAOYSA-N magnesium dicyanide Chemical compound [Mg+2].N#[C-].N#[C-] FKWSMBAMOQCVPV-UHFFFAOYSA-N 0.000 claims description 3
- BLQJIBCZHWBKSL-UHFFFAOYSA-L magnesium iodide Chemical compound [Mg+2].[I-].[I-] BLQJIBCZHWBKSL-UHFFFAOYSA-L 0.000 claims description 3
- 229910001641 magnesium iodide Inorganic materials 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- 229960004995 magnesium peroxide Drugs 0.000 claims description 3
- 229910052943 magnesium sulfate Inorganic materials 0.000 claims description 3
- QENHCSSJTJWZAL-UHFFFAOYSA-N magnesium sulfide Chemical compound [Mg+2].[S-2] QENHCSSJTJWZAL-UHFFFAOYSA-N 0.000 claims description 3
- 235000019341 magnesium sulphate Nutrition 0.000 claims description 3
- NNNSKJSUQWKSAM-UHFFFAOYSA-L magnesium;dichlorate Chemical compound [Mg+2].[O-]Cl(=O)=O.[O-]Cl(=O)=O NNNSKJSUQWKSAM-UHFFFAOYSA-L 0.000 claims description 3
- CRGGPIWCSGOBDN-UHFFFAOYSA-N magnesium;dioxido(dioxo)chromium Chemical compound [Mg+2].[O-][Cr]([O-])(=O)=O CRGGPIWCSGOBDN-UHFFFAOYSA-N 0.000 claims description 3
- LOCZQLKNTOXJDV-UHFFFAOYSA-N magnesium;oxido(oxo)borane Chemical compound [Mg+2].[O-]B=O.[O-]B=O LOCZQLKNTOXJDV-UHFFFAOYSA-N 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- JESHZQPNPCJVNG-UHFFFAOYSA-L magnesium;sulfite Chemical compound [Mg+2].[O-]S([O-])=O JESHZQPNPCJVNG-UHFFFAOYSA-L 0.000 claims description 3
- YJPVTCSBVRMESK-UHFFFAOYSA-L strontium bromide Chemical compound [Br-].[Br-].[Sr+2] YJPVTCSBVRMESK-UHFFFAOYSA-L 0.000 claims description 3
- 229910001625 strontium bromide Inorganic materials 0.000 claims description 3
- 229940074155 strontium bromide Drugs 0.000 claims description 3
- 229910000018 strontium carbonate Inorganic materials 0.000 claims description 3
- FRTABACCYANHFP-UHFFFAOYSA-L strontium chlorate Chemical compound [Sr+2].[O-]Cl(=O)=O.[O-]Cl(=O)=O FRTABACCYANHFP-UHFFFAOYSA-L 0.000 claims description 3
- 229910001631 strontium chloride Inorganic materials 0.000 claims description 3
- NVKTUNLPFJHLCG-UHFFFAOYSA-N strontium chromate Chemical compound [Sr+2].[O-][Cr]([O-])(=O)=O NVKTUNLPFJHLCG-UHFFFAOYSA-N 0.000 claims description 3
- AHBGXTDRMVNFER-UHFFFAOYSA-L strontium dichloride Chemical compound [Cl-].[Cl-].[Sr+2] AHBGXTDRMVNFER-UHFFFAOYSA-L 0.000 claims description 3
- KRIJWFBRWPCESA-UHFFFAOYSA-L strontium iodide Chemical compound [Sr+2].[I-].[I-] KRIJWFBRWPCESA-UHFFFAOYSA-L 0.000 claims description 3
- 229910001643 strontium iodide Inorganic materials 0.000 claims description 3
- UHCGLDSRFKGERO-UHFFFAOYSA-N strontium peroxide Chemical compound [Sr+2].[O-][O-] UHCGLDSRFKGERO-UHFFFAOYSA-N 0.000 claims description 3
- RXSHXLOMRZJCLB-UHFFFAOYSA-L strontium;diacetate Chemical compound [Sr+2].CC([O-])=O.CC([O-])=O RXSHXLOMRZJCLB-UHFFFAOYSA-L 0.000 claims description 3
- WTNNIXSCSYFNFP-UHFFFAOYSA-N strontium;dicyanide Chemical compound [Sr+2].N#[C-].N#[C-] WTNNIXSCSYFNFP-UHFFFAOYSA-N 0.000 claims description 3
- MXRFIUHRIOLIIV-UHFFFAOYSA-L strontium;diperchlorate Chemical compound [Sr+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O MXRFIUHRIOLIIV-UHFFFAOYSA-L 0.000 claims description 3
- ZEGFMFQPWDMMEP-UHFFFAOYSA-N strontium;sulfide Chemical compound [S-2].[Sr+2] ZEGFMFQPWDMMEP-UHFFFAOYSA-N 0.000 claims description 3
- VTBSJEPGLHXIIS-UHFFFAOYSA-L strontium;sulfite Chemical compound [Sr+2].[O-]S([O-])=O VTBSJEPGLHXIIS-UHFFFAOYSA-L 0.000 claims description 3
- LNSYCBFBTCINRL-UHFFFAOYSA-N tristrontium;diborate Chemical compound [Sr+2].[Sr+2].[Sr+2].[O-]B([O-])[O-].[O-]B([O-])[O-] LNSYCBFBTCINRL-UHFFFAOYSA-N 0.000 claims description 3
- XBJJRSFLZVLCSE-UHFFFAOYSA-N barium(2+);diborate Chemical compound [Ba+2].[Ba+2].[Ba+2].[O-]B([O-])[O-].[O-]B([O-])[O-] XBJJRSFLZVLCSE-UHFFFAOYSA-N 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 abstract description 19
- 238000005260 corrosion Methods 0.000 abstract description 19
- 150000002736 metal compounds Chemical class 0.000 abstract 2
- 239000010408 film Substances 0.000 description 40
- 239000010410 layer Substances 0.000 description 32
- 239000000243 solution Substances 0.000 description 30
- 238000004140 cleaning Methods 0.000 description 26
- 239000011229 interlayer Substances 0.000 description 19
- 238000001312 dry etching Methods 0.000 description 11
- 239000000126 substance Substances 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000011282 treatment Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000007654 immersion Methods 0.000 description 6
- 229910021642 ultra pure water Inorganic materials 0.000 description 5
- 239000012498 ultrapure water Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QBLDFAIABQKINO-UHFFFAOYSA-N barium borate Chemical compound [Ba+2].[O-]B=O.[O-]B=O QBLDFAIABQKINO-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000001553 barium compounds Chemical class 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- UOUJSJZBMCDAEU-UHFFFAOYSA-N chromium(3+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[Cr+3].[Cr+3] UOUJSJZBMCDAEU-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/08—Anti-corrosive paints
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/20—Nitrogen oxides; Oxyacids of nitrogen; Salts thereof
- C01B21/38—Nitric acid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/20—Nitrogen oxides; Oxyacids of nitrogen; Salts thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F7/00—Compounds of aluminium
- C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
- C01F7/021—After-treatment of oxides or hydroxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K15/00—Anti-oxidant compositions; Compositions inhibiting chemical change
- C09K15/02—Anti-oxidant compositions; Compositions inhibiting chemical change containing inorganic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Geology (AREA)
- Plasma & Fusion (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Formation Of Insulating Films (AREA)
Abstract
本發明係關於氧化鋁保護液、氧化鋁之保護方法、及使用此方法之具有氧化鋁層之半導體基板之製造方法。本發明之氧化鋁保護液,其特徵為含有0.0001~20質量%之鹼土類金屬化合物,且前述鹼土類金屬係選自由鈹、鎂、鍶及鋇構成之群組中之一者以上。依本發明,可在半導體電路之製造步驟中抑制氧化鋁之腐蝕。
Description
本發明係關於在半導體積體電路之製造步驟中抑制氧化鋁之腐蝕用的保護液、氧化鋁之保護方法、及使用了此保護方法之具有氧化鋁層之半導體基板之製造方法。
半導體積體電路之利用洗淨液所為之洗淨步驟中,係除去乾蝕刻殘渣、光阻、硬遮罩等。一般而言,在此洗淨步驟要求要對於除去對象以外之材質不造成腐蝕。
近年來,隨著設計規則的微細化,電晶體之閘之構成開始逐漸由氧化矽與多晶矽之組合變更為高介電常數材料與金屬之組合。此高介電常數材料有時會使用氧化鋁。
又,當利用乾蝕刻來形成通孔(via)時,會選擇氟系之氣體,考量對於氟系之氣體的耐性高的觀點,有時會選擇氧化鋁作為蝕刻阻擋層(非專利文獻1)。
再者,有時會使用氧化鋁作為硬遮罩的材質(專利文獻1)。
如上,半導體積體電路及其製造步驟有時會使用氧化鋁,但會有洗淨步驟中一般使用之含有氟化合物、氧化劑、鹼等的洗淨液接觸氧化鋁時發生氧化鋁劇烈腐蝕的問題。所以,強烈需求在使用該等洗淨液之洗淨步驟中抑制對於氧化鋁之腐蝕的方法。
[先前技術文獻]
[專利文獻]
近年來,隨著設計規則的微細化,電晶體之閘之構成開始逐漸由氧化矽與多晶矽之組合變更為高介電常數材料與金屬之組合。此高介電常數材料有時會使用氧化鋁。
又,當利用乾蝕刻來形成通孔(via)時,會選擇氟系之氣體,考量對於氟系之氣體的耐性高的觀點,有時會選擇氧化鋁作為蝕刻阻擋層(非專利文獻1)。
再者,有時會使用氧化鋁作為硬遮罩的材質(專利文獻1)。
如上,半導體積體電路及其製造步驟有時會使用氧化鋁,但會有洗淨步驟中一般使用之含有氟化合物、氧化劑、鹼等的洗淨液接觸氧化鋁時發生氧化鋁劇烈腐蝕的問題。所以,強烈需求在使用該等洗淨液之洗淨步驟中抑制對於氧化鋁之腐蝕的方法。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特開2013-534039號公報
[非專利文獻]
[非專利文獻]
[非專利文獻1]16th
MME workshop, Goeteborg, Sweden, 2005 “Etch stop materials for release by vapor HF etching”
(發明欲解決之課題)
本發明之課題在於提供氧化鋁之保護液、保護方法、及使用此保護方法之具有氧化鋁層之半導體基板之製造方法。
(解決課題之方式)
(解決課題之方式)
本案發明人等努力研究,結果發現依以下之發明能夠解決本課題。本發明如下。
[1]一種氧化鋁保護液(保護膜形成液),含有0.0001~20質量%之鹼土類金屬化合物,該鹼土類金屬係選自由鈹、鎂、鍶及鋇構成之群組中之一者以上。
[2]如[1]之氧化鋁保護液,其中,該鹼土類金屬化合物係選自由下列物質構成之群組中之一者以上:
硝酸鈹、乙酸鈹、氯化鈹、氫氧化鈹、亞硫酸鈹、氯酸鈹、過氯酸鈹、過氧化鈹、鉻酸鈹、氧化鈹、氰化鈹、溴化鈹、碳酸鈹、偏硼酸鈹、碘化鈹、四氟硼酸鈹、硫酸鈹、硫化鈹、及使氫氧化鈹與酸反應而得的鹽;
硝酸鎂、乙酸鎂、氯化鎂、氫氧化鎂、亞硫酸鎂、氯酸鎂、過氯酸鎂、過氧化鎂、鉻酸鎂、氧化鎂、氰化鎂、溴化鎂、碳酸鎂、偏硼酸鎂、碘化鎂、四氟硼酸鎂、硫酸鎂、硫化鎂、及使氫氧化鎂與酸反應而得的鹽;
硝酸鍶、乙酸鍶、氯化鍶、氫氧化鍶、亞硫酸鍶、氯酸鍶、過氯酸鍶、過氧化鍶、鉻酸鍶、氧化鍶、氰化鍶、溴化鍶、碳酸鍶、偏硼酸鍶、碘化鍶、四氟硼酸鍶、硫酸鍶、硫化鍶、及使氫氧化鍶與酸反應而得的鹽;及
硝酸鋇、乙酸鋇、氯化鋇、氫氧化鋇、亞硫酸鋇、氯酸鋇、過氯酸鋇、過氧化鋇、鉻酸鋇、氧化鋇、氰化鋇、溴化鋇、碳酸鋇、偏硼酸鋇、碘化鋇、四氟硼酸鋇、硫酸鋇、硫化鋇、及使氫氧化鋇與酸反應而得的鹽。
[3]如[1]或[2]之氧化鋁保護液,其中,該鹼土類金屬為鋇。
[4]如[1]~[3]中任一項之氧化鋁保護液,其中,該鹼土類金屬化合物係選自由硝酸鋇、乙酸鋇、氯化鋇及氫氧化鋇構成之群組中之一者以上。
[5]如[1]~[4]中任一項之氧化鋁保護液,其中,含有超過1質量%之該鹼土類金屬化合物。
[6]如[1]~[5]中任一項之氧化鋁保護液,其中,過氧化氫之含量未達0.002質量%。
[7]一種氧化鋁之保護方法,包括下列步驟:
使用如[1]~[6]中任一項之氧化鋁保護液對含有氧化鋁之氧化鋁層之表面之至少一部分進行處理。
[8]一種具有氧化鋁層之半導體基板之製造方法,包括下列步驟:
使用如[7]之氧化鋁之保護方法對氧化鋁層中含有之氧化鋁予以保護。
依照本發明之理想態樣,藉由以氧化鋁保護液對氧化鋁層之表面之至少一部分進行處理,可在氧化鋁層之表面之至少一部分形成保護膜,保護氧化鋁層中含有有的氧化鋁免於因洗淨液等藥液等造成腐蝕。
(發明之效果)
[2]如[1]之氧化鋁保護液,其中,該鹼土類金屬化合物係選自由下列物質構成之群組中之一者以上:
硝酸鈹、乙酸鈹、氯化鈹、氫氧化鈹、亞硫酸鈹、氯酸鈹、過氯酸鈹、過氧化鈹、鉻酸鈹、氧化鈹、氰化鈹、溴化鈹、碳酸鈹、偏硼酸鈹、碘化鈹、四氟硼酸鈹、硫酸鈹、硫化鈹、及使氫氧化鈹與酸反應而得的鹽;
硝酸鎂、乙酸鎂、氯化鎂、氫氧化鎂、亞硫酸鎂、氯酸鎂、過氯酸鎂、過氧化鎂、鉻酸鎂、氧化鎂、氰化鎂、溴化鎂、碳酸鎂、偏硼酸鎂、碘化鎂、四氟硼酸鎂、硫酸鎂、硫化鎂、及使氫氧化鎂與酸反應而得的鹽;
硝酸鍶、乙酸鍶、氯化鍶、氫氧化鍶、亞硫酸鍶、氯酸鍶、過氯酸鍶、過氧化鍶、鉻酸鍶、氧化鍶、氰化鍶、溴化鍶、碳酸鍶、偏硼酸鍶、碘化鍶、四氟硼酸鍶、硫酸鍶、硫化鍶、及使氫氧化鍶與酸反應而得的鹽;及
硝酸鋇、乙酸鋇、氯化鋇、氫氧化鋇、亞硫酸鋇、氯酸鋇、過氯酸鋇、過氧化鋇、鉻酸鋇、氧化鋇、氰化鋇、溴化鋇、碳酸鋇、偏硼酸鋇、碘化鋇、四氟硼酸鋇、硫酸鋇、硫化鋇、及使氫氧化鋇與酸反應而得的鹽。
[3]如[1]或[2]之氧化鋁保護液,其中,該鹼土類金屬為鋇。
[4]如[1]~[3]中任一項之氧化鋁保護液,其中,該鹼土類金屬化合物係選自由硝酸鋇、乙酸鋇、氯化鋇及氫氧化鋇構成之群組中之一者以上。
[5]如[1]~[4]中任一項之氧化鋁保護液,其中,含有超過1質量%之該鹼土類金屬化合物。
[6]如[1]~[5]中任一項之氧化鋁保護液,其中,過氧化氫之含量未達0.002質量%。
[7]一種氧化鋁之保護方法,包括下列步驟:
使用如[1]~[6]中任一項之氧化鋁保護液對含有氧化鋁之氧化鋁層之表面之至少一部分進行處理。
[8]一種具有氧化鋁層之半導體基板之製造方法,包括下列步驟:
使用如[7]之氧化鋁之保護方法對氧化鋁層中含有之氧化鋁予以保護。
依照本發明之理想態樣,藉由以氧化鋁保護液對氧化鋁層之表面之至少一部分進行處理,可在氧化鋁層之表面之至少一部分形成保護膜,保護氧化鋁層中含有有的氧化鋁免於因洗淨液等藥液等造成腐蝕。
(發明之效果)
依照本發明之理想態樣,可在半導體電路之製造步驟中抑制氧化鋁之腐蝕,能夠以良好良率製造高精度、高品質的半導體基板。
本發明之氧化鋁之保護方法,使用含有鹼土類金屬化合物之氧化鋁保護液。以下針對氧化鋁保護液、保護方法及使用此保護方法之具有氧化鋁層之半導體基板之製造方法詳細說明。
[氧化鋁保護液]
(鹼土類金屬化合物)
本發明使用之鹼土類金屬化合物,係含有選自由鈹、鎂、鍶、及鋇構成之群組中之一者以上之金屬之無機物。它們有在氧化鋁層之表面之至少一部分形成保護膜之效果,例如可以抑制在保護膜形成後之洗淨步驟中由於洗淨液所致之對於氧化鋁之腐蝕。同屬的鈣對於鹼的防蝕性能不令人滿意,鐳的價格昂貴,且就化合物而言常不安定,不適合使用。
鹼土類金屬化合物之具體例可列舉:
硝酸鈹、乙酸鈹、氯化鈹、氫氧化鈹、亞硫酸鈹、氯酸鈹、過氯酸鈹、過氧化鈹、鉻酸鈹、氧化鈹、氰化鈹、溴化鈹、碳酸鈹、偏硼酸鈹、碘化鈹、四氟硼酸鈹、硫酸鈹、硫化鈹、及使氫氧化鈹與酸反應而得之鹽;
硝酸鎂、乙酸鎂、氯化鎂、氫氧化鎂、亞硫酸鎂、氯酸鎂、過氯酸鎂、過氧化鎂、鉻酸鎂、氧化鎂、氰化鎂、溴化鎂、碳酸鎂、偏硼酸鎂、碘化鎂、四氟硼酸鎂、硫酸鎂、硫化鎂、及使氫氧化鎂與酸反應而得之鹽;
硝酸鍶、乙酸鍶、氯化鍶、氫氧化鍶、亞硫酸鍶、氯酸鍶、過氯酸鍶、過氧化鍶、鉻酸鍶、氧化鍶、氰化鍶、溴化鍶、碳酸鍶、偏硼酸鍶、碘化鍶、四氟硼酸鍶、硫酸鍶、硫化鍶、及使氫氧化鍶與酸反應而得之鹽;
硝酸鋇、乙酸鋇、氯化鋇、氫氧化鋇、亞硫酸鋇、氯酸鋇、過氯酸鋇、過氧化鋇、鉻酸鋇、氧化鋇、氰化鋇、溴化鋇、碳酸鋇、偏硼酸鋇、碘化鋇、四氟硼酸鋇、硫酸鋇、硫化鋇、及使氫氧化鋇與酸反應而得之鹽,
可將它們予以單獨使用或組合2種以上使用。
該等之中,鋇化合物,亦即硝酸鋇、乙酸鋇、氯化鋇、氫氧化鋇、亞硫酸鋇、氯酸鋇、過氯酸鋇、過氧化鋇、鉻酸鋇、氧化鋇、氰化鋇、溴化鋇、碳酸鋇、偏硼酸鋇、碘化鋇、四氟硼酸鋇、硫酸鋇、硫化鋇、及使氫氧化鋇與酸反應而得之鹽,氧化鋁的腐蝕抑制效果高故較理想。再者,硝酸鋇、乙酸鋇、氯化鋇及氫氧化鋇有高水溶性,取得容易,特別理想。
本發明之氧化鋁保護液中之鹼土類金屬化合物之濃度(含量),為0.0001~20質量%,較佳為0.00025~17.5質量%,更佳為0.0005~15質量%,尤佳為0.001~10質量%,更佳為超過1質量%,又更佳為1.5~10質量%。藉由在此範圍內,能夠在氧化鋁表面之至少一部分形成保護膜,可以有效抑制對於氧化鋁的損害。
(鹼土類金屬化合物)
本發明使用之鹼土類金屬化合物,係含有選自由鈹、鎂、鍶、及鋇構成之群組中之一者以上之金屬之無機物。它們有在氧化鋁層之表面之至少一部分形成保護膜之效果,例如可以抑制在保護膜形成後之洗淨步驟中由於洗淨液所致之對於氧化鋁之腐蝕。同屬的鈣對於鹼的防蝕性能不令人滿意,鐳的價格昂貴,且就化合物而言常不安定,不適合使用。
鹼土類金屬化合物之具體例可列舉:
硝酸鈹、乙酸鈹、氯化鈹、氫氧化鈹、亞硫酸鈹、氯酸鈹、過氯酸鈹、過氧化鈹、鉻酸鈹、氧化鈹、氰化鈹、溴化鈹、碳酸鈹、偏硼酸鈹、碘化鈹、四氟硼酸鈹、硫酸鈹、硫化鈹、及使氫氧化鈹與酸反應而得之鹽;
硝酸鎂、乙酸鎂、氯化鎂、氫氧化鎂、亞硫酸鎂、氯酸鎂、過氯酸鎂、過氧化鎂、鉻酸鎂、氧化鎂、氰化鎂、溴化鎂、碳酸鎂、偏硼酸鎂、碘化鎂、四氟硼酸鎂、硫酸鎂、硫化鎂、及使氫氧化鎂與酸反應而得之鹽;
硝酸鍶、乙酸鍶、氯化鍶、氫氧化鍶、亞硫酸鍶、氯酸鍶、過氯酸鍶、過氧化鍶、鉻酸鍶、氧化鍶、氰化鍶、溴化鍶、碳酸鍶、偏硼酸鍶、碘化鍶、四氟硼酸鍶、硫酸鍶、硫化鍶、及使氫氧化鍶與酸反應而得之鹽;
硝酸鋇、乙酸鋇、氯化鋇、氫氧化鋇、亞硫酸鋇、氯酸鋇、過氯酸鋇、過氧化鋇、鉻酸鋇、氧化鋇、氰化鋇、溴化鋇、碳酸鋇、偏硼酸鋇、碘化鋇、四氟硼酸鋇、硫酸鋇、硫化鋇、及使氫氧化鋇與酸反應而得之鹽,
可將它們予以單獨使用或組合2種以上使用。
該等之中,鋇化合物,亦即硝酸鋇、乙酸鋇、氯化鋇、氫氧化鋇、亞硫酸鋇、氯酸鋇、過氯酸鋇、過氧化鋇、鉻酸鋇、氧化鋇、氰化鋇、溴化鋇、碳酸鋇、偏硼酸鋇、碘化鋇、四氟硼酸鋇、硫酸鋇、硫化鋇、及使氫氧化鋇與酸反應而得之鹽,氧化鋁的腐蝕抑制效果高故較理想。再者,硝酸鋇、乙酸鋇、氯化鋇及氫氧化鋇有高水溶性,取得容易,特別理想。
本發明之氧化鋁保護液中之鹼土類金屬化合物之濃度(含量),為0.0001~20質量%,較佳為0.00025~17.5質量%,更佳為0.0005~15質量%,尤佳為0.001~10質量%,更佳為超過1質量%,又更佳為1.5~10質量%。藉由在此範圍內,能夠在氧化鋁表面之至少一部分形成保護膜,可以有效抑制對於氧化鋁的損害。
(其他成分)
本發明之氧化鋁保護液中,視需要可在無損本發明目的之範圍內摻合自以往於半導體用組成物中使用的成分。
例如:就添加劑而言,可以添加鹼、酸、螯合劑、界面活性劑、消泡劑、氧化劑、還原劑、金屬防蝕劑及水溶性有機溶劑等。
本發明之氧化鋁保護液中,視需要可在無損本發明目的之範圍內摻合自以往於半導體用組成物中使用的成分。
例如:就添加劑而言,可以添加鹼、酸、螯合劑、界面活性劑、消泡劑、氧化劑、還原劑、金屬防蝕劑及水溶性有機溶劑等。
(水)
本發明之氧化鋁保護液之殘餘部分為水。本發明能使用之水不特別限定,宜為已利用蒸餾、離子交換處理、過濾處理、各種吸附處理等除去了金屬離子、有機雜質、顆粒等者較理想,純水更佳,超純水尤佳。
氧化鋁保護液中之水之濃度(含量)宜為70~100質量%較理想,更佳為90~100質量%,又更佳為95~100質量%,尤佳為98~100質量%。
本發明之氧化鋁保護液之殘餘部分為水。本發明能使用之水不特別限定,宜為已利用蒸餾、離子交換處理、過濾處理、各種吸附處理等除去了金屬離子、有機雜質、顆粒等者較理想,純水更佳,超純水尤佳。
氧化鋁保護液中之水之濃度(含量)宜為70~100質量%較理想,更佳為90~100質量%,又更佳為95~100質量%,尤佳為98~100質量%。
(氧化鋁保護液之製備方法)
本發明之氧化鋁保護液,可藉由在鹼土類金屬化合物及視需要之其他成分中加入水(較佳為超純水)並攪拌直到均勻以製備。
又,本發明之氧化鋁保護液宜實質上不含過氧化氫較佳,過氧化氫在氧化鋁保護液中之濃度(含量)未達0.002質量%更佳。
本發明之氧化鋁保護液,可藉由在鹼土類金屬化合物及視需要之其他成分中加入水(較佳為超純水)並攪拌直到均勻以製備。
又,本發明之氧化鋁保護液宜實質上不含過氧化氫較佳,過氧化氫在氧化鋁保護液中之濃度(含量)未達0.002質量%更佳。
(氧化鋁保護液之使用方法)
使用本發明之氧化鋁保護液之溫度通常為20~70℃,較佳為30~60℃,尤佳為40~55℃。氧化鋁保護液之使用條件依照使用之半導體基板適當選擇即可。
使用本發明之氧化鋁保護液之時間通常為0.2~60分鐘。氧化鋁保護液之使用條件,依使用之半導體基板適當選擇即可。
藉由以如此的條件使用氧化鋁保護液,可在半導體基板所具有之氧化鋁層之表面之至少一部分理想地形成保護膜,能夠保護氧化鋁層中含有的氧化鋁。又,本發明中,保護膜之厚度無特殊限制。依照本發明之理想態樣,藉由將氧化鋁層之表面之至少一部分以本發明之氧化鋁保護液處理,能夠保護氧化鋁層中含有的氧化鋁免於因洗淨液等藥液等導致腐蝕。
使用本發明之氧化鋁保護液之溫度通常為20~70℃,較佳為30~60℃,尤佳為40~55℃。氧化鋁保護液之使用條件依照使用之半導體基板適當選擇即可。
使用本發明之氧化鋁保護液之時間通常為0.2~60分鐘。氧化鋁保護液之使用條件,依使用之半導體基板適當選擇即可。
藉由以如此的條件使用氧化鋁保護液,可在半導體基板所具有之氧化鋁層之表面之至少一部分理想地形成保護膜,能夠保護氧化鋁層中含有的氧化鋁。又,本發明中,保護膜之厚度無特殊限制。依照本發明之理想態樣,藉由將氧化鋁層之表面之至少一部分以本發明之氧化鋁保護液處理,能夠保護氧化鋁層中含有的氧化鋁免於因洗淨液等藥液等導致腐蝕。
(對於洗淨液之添加)
本發明使用之氧化鋁保護液,也可添加到半導體基板之洗淨步驟使用之洗淨液中,可同時保護氧化鋁並進行洗淨。如此的情形中,就鹼土類金屬化合物而言,宜含有含鋇之無機物較佳,較佳為能夠實施半導體基板之洗淨,能夠抑制洗淨液所致對於氧化鋁之腐蝕。
本發明使用之氧化鋁保護液,也可添加到半導體基板之洗淨步驟使用之洗淨液中,可同時保護氧化鋁並進行洗淨。如此的情形中,就鹼土類金屬化合物而言,宜含有含鋇之無機物較佳,較佳為能夠實施半導體基板之洗淨,能夠抑制洗淨液所致對於氧化鋁之腐蝕。
[半導體基板]
本發明能理想地使用之半導體基板,為
矽、非晶質矽、多晶矽、玻璃等基板材料;
氧化矽、氮化矽、碳化矽及該等的衍生物等絕緣材料;
鈷、鈷合金、鎢、鈦-鎢等材料;
鎵-砷、鎵-磷、銦-磷、銦-鎵-砷、銦-鋁-砷等化合物半導體及鉻氧化物等氧化物半導體,尤其使用低介電常數層間絕緣膜之基板,有這些材料的半導體基板皆具有含氧化鋁之氧化鋁層。具體而言,例如:就蝕刻阻擋層及硬遮罩等而言,具有氧化鋁層。
氧化鋁層中,氧化鋁之含量較佳為30質量%以上,更佳為50質量%以上,又更佳為70質量%以上,更佳為90質量%以上,尤佳為100質量%。
本發明能理想地使用之半導體基板,為
矽、非晶質矽、多晶矽、玻璃等基板材料;
氧化矽、氮化矽、碳化矽及該等的衍生物等絕緣材料;
鈷、鈷合金、鎢、鈦-鎢等材料;
鎵-砷、鎵-磷、銦-磷、銦-鎵-砷、銦-鋁-砷等化合物半導體及鉻氧化物等氧化物半導體,尤其使用低介電常數層間絕緣膜之基板,有這些材料的半導體基板皆具有含氧化鋁之氧化鋁層。具體而言,例如:就蝕刻阻擋層及硬遮罩等而言,具有氧化鋁層。
氧化鋁層中,氧化鋁之含量較佳為30質量%以上,更佳為50質量%以上,又更佳為70質量%以上,更佳為90質量%以上,尤佳為100質量%。
[氧化鋁之保護方法]
本發明之氧化鋁之保護方法包括以本發明之氧化鋁保護液處理氧化鋁層之表面之至少一部分的步驟。例如:藉由使本發明之氧化鋁保護液接觸氧化鋁層之表面之至少一部分以進行處理。
本發明之氧化鋁之保護方法包括以本發明之氧化鋁保護液處理氧化鋁層之表面之至少一部分的步驟。例如:藉由使本發明之氧化鋁保護液接觸氧化鋁層之表面之至少一部分以進行處理。
本發明之氧化鋁保護液之使用溫度及使用時間,如前述「氧化鋁保護液之使用方法」所述。使氧化鋁層之表面接觸本發明之氧化鋁保護液之方法無特殊限制,可以採用例如以滴加(單片旋轉處理)或噴灑等形式使氧化鋁層之表面接觸本發明之氧化鋁保護液之方法、或使氧化鋁層之表面浸漬於本發明之氧化鋁保護液之方法等。本發明中各方法皆可採用。
藉由使用本發明之氧化鋁之保護方法,能夠保護氧化鋁層中含有之氧化鋁免於因洗淨液等藥液等導致腐蝕,能夠抑制氧化鋁腐蝕。
[具有氧化鋁層之半導體基板之製造方法]
本發明之半導體基板之製造方法,包括使用本發明之氧化鋁之保護方法來保護半導體基板所具有之氧化鋁層中含有之氧化鋁的步驟。藉此,能夠保護氧化鋁層中含有之氧化鋁免於因洗淨液等藥液等導致腐蝕,可抑制氧化鋁腐蝕且能夠不影響電特性而製造半導體基板。
本發明之半導體基板之製造方法,包括使用本發明之氧化鋁之保護方法來保護半導體基板所具有之氧化鋁層中含有之氧化鋁的步驟。藉此,能夠保護氧化鋁層中含有之氧化鋁免於因洗淨液等藥液等導致腐蝕,可抑制氧化鋁腐蝕且能夠不影響電特性而製造半導體基板。
本發明之組成物之使用溫度及使用時間,如前述「氧化鋁保護液之使用方法」所述。針對使半導體基板所具有之氧化鋁層之表面接觸本發明之組成物之方法,亦如前述「氧化鋁之保護方法」所述。
圖1至5顯示具有氧化鋁層之半導體基板之剖面結構之一例。
圖1係通孔底部為氧化鋁時,乾蝕刻殘渣除去前之半導體基板中之具低介電常數層間絕緣膜之半導體基板之一形態之剖面圖之示意圖。圖1中,利用乾蝕刻而於低介電常數層間絕緣膜6形成了通孔,通孔底部為氧化鋁1。通孔及低介電常數層間絕緣膜6之表面附著有乾蝕刻殘渣2。
圖2顯示硬遮罩為氧化鋁時,乾蝕刻殘渣除去前之半導體基板中之具低介電常數層間絕緣膜之半導體基板之一形態之剖面圖之示意圖。圖2中,在低介電常數層間絕緣膜6上疊層了氧化鋁系硬遮罩3,於此利用乾蝕刻形成了通孔。通孔及氧化鋁系硬遮罩3之表面附著了乾蝕刻殘渣2。
圖3顯示通孔底部為氧化鋁時,硬遮罩(不包括氧化鋁系硬遮罩)除去前之半導體基板中,具低介電常數層間絕緣膜之半導體基板之一形態之剖面圖之示意圖。圖3中,低介電常數層間絕緣膜6上疊層了硬遮罩(不包括氧化鋁系硬遮罩)4,於此形成了通孔。通孔底部為氧化鋁1。
圖4顯示通孔底部為氧化鋁時之光阻除去前之半導體基板之具低介電常數層間絕緣膜之半導體基板之一形態之剖面圖之示意圖。圖4中,在低介電常數層間絕緣膜6上疊層有光阻5,於此形成了通孔。通孔底部為氧化鋁1。
圖5顯示硬遮罩為氧化鋁時之光阻除去前之半導體基板中,具低介電常數層間絕緣膜之半導體基板之一形態之剖面圖之示意圖。圖5中,在低介電常數層間絕緣膜6上按順序疊層了氧化鋁系硬遮罩3及光阻5,於此形成了通孔。通孔底部為低介電常數層間絕緣膜6。
本發明之半導體基板之製造方法中,藉由於如此的半導體基板所具有之氧化鋁層露出表面的各式各樣的階段使用本發明之氧化鋁保護液對氧化鋁層之表面予以保護,在之後之步驟能夠保護氧化鋁層中含有之氧化鋁免於因洗淨液等藥液等導致腐蝕,能夠抑制氧化鋁腐蝕。依照本發明之理想態樣,能不影響電特性而以良好的良率製造高精度、高品質之半導體基板。
[實施例]
[實施例]
以下依實施例及比較例來具體說明本發明,但只要能夠發揮本發明之效果,可以適當變更實施形態。
又,若無特別指明,則%代表質量%。
又,若無特別指明,則%代表質量%。
<附評價用膜之晶圓>:用於評價對於氧化鋁之損害
使用製有氧化鋁膜的12吋的附膜晶圓(氧化鋁之膜厚300埃),切成1cm×1cm而得的小塊晶片。
使用製有氧化鋁膜的12吋的附膜晶圓(氧化鋁之膜厚300埃),切成1cm×1cm而得的小塊晶片。
[評價方法]
<E.R.(蝕刻速率)>
於50℃對於附氧化鋁膜之晶圓實施利用保護液所為之處理、及利用洗淨液所為之處理,將一連串處理前後之膜厚差除以利用洗淨液所為之處理時間,算出E.R.。附氧化鋁膜之晶圓之膜厚,使用n&k科技公司製光學式膜厚計n&k1280測定。
<E.R.(蝕刻速率)>
於50℃對於附氧化鋁膜之晶圓實施利用保護液所為之處理、及利用洗淨液所為之處理,將一連串處理前後之膜厚差除以利用洗淨液所為之處理時間,算出E.R.。附氧化鋁膜之晶圓之膜厚,使用n&k科技公司製光學式膜厚計n&k1280測定。
[實施例1~13及比較例1~7]
於實施例1~13及比較例1,於50℃將附氧化鋁膜之晶圓浸漬於表1記載的保護液中1分鐘,然後,於50℃於洗淨液中浸漬0.5分鐘,然後實施利用超純水所為之淋洗、利用乾燥氮氣噴射所為之乾燥。
將處理前後之附氧化鋁膜之晶圓之膜厚差除以洗淨液之浸漬時間,以算出E.R.。
比較例2~7中,省略利用保護液所為之浸漬處理,於50℃於洗淨液中浸漬0.5分鐘,之後實施利用超純水所為之淋洗、利用乾燥氮氣噴射所為之乾燥。E.R.和上述同樣地算出。
可知:相較於比較例2~7,實施例1~13藉由加了利用保護液所為之浸漬處理,能夠抑制洗淨液所致之對於氧化鋁之腐蝕。
可知:比較例1中,即使實施利用含有含鈣之無機物之水溶液所為之浸漬,仍無法抑制之後之洗淨液對於氧化鋁之腐蝕。
於實施例1~13及比較例1,於50℃將附氧化鋁膜之晶圓浸漬於表1記載的保護液中1分鐘,然後,於50℃於洗淨液中浸漬0.5分鐘,然後實施利用超純水所為之淋洗、利用乾燥氮氣噴射所為之乾燥。
將處理前後之附氧化鋁膜之晶圓之膜厚差除以洗淨液之浸漬時間,以算出E.R.。
比較例2~7中,省略利用保護液所為之浸漬處理,於50℃於洗淨液中浸漬0.5分鐘,之後實施利用超純水所為之淋洗、利用乾燥氮氣噴射所為之乾燥。E.R.和上述同樣地算出。
可知:相較於比較例2~7,實施例1~13藉由加了利用保護液所為之浸漬處理,能夠抑制洗淨液所致之對於氧化鋁之腐蝕。
可知:比較例1中,即使實施利用含有含鈣之無機物之水溶液所為之浸漬,仍無法抑制之後之洗淨液對於氧化鋁之腐蝕。
【表1】
TMAH;氫氧化四甲基銨
[參考例1~6]
參考例1~6中,於50℃將附氧化鋁膜之晶圓浸漬於表2記載之含鹼土類金屬化合物之洗淨液中5分鐘,之後實施利用超純水所為之淋洗、利用乾燥氮氣噴射所為之乾燥。處理前後之附氧化鋁膜之晶圓之膜厚差除以洗淨液之浸漬時間,以算出E.R.。可知:相較於參考例3~6,參考例1~2藉由將含鋇之無機物添加到洗淨液,能夠抑制洗淨液所致之對於氧化鋁之腐蝕。
參考例1~6中,於50℃將附氧化鋁膜之晶圓浸漬於表2記載之含鹼土類金屬化合物之洗淨液中5分鐘,之後實施利用超純水所為之淋洗、利用乾燥氮氣噴射所為之乾燥。處理前後之附氧化鋁膜之晶圓之膜厚差除以洗淨液之浸漬時間,以算出E.R.。可知:相較於參考例3~6,參考例1~2藉由將含鋇之無機物添加到洗淨液,能夠抑制洗淨液所致之對於氧化鋁之腐蝕。
【表2】
1‧‧‧氧化鋁
2‧‧‧乾蝕刻殘渣
3‧‧‧氧化鋁系硬遮罩
4‧‧‧硬遮罩(氧化鋁系以外)
5‧‧‧光阻
6‧‧‧低介電常數層間絕緣膜
圖1顯示通孔底部為氧化鋁時之乾蝕刻殘渣除去前之半導體基板中,具有低介電常數層間絕緣膜之半導體基板之一形態之剖面圖之示意圖。
圖2顯示硬遮罩為氧化鋁時之乾蝕刻殘渣除去前之半導體基板中,具有低介電常數層間絕緣膜之半導體基板之一形之剖面圖之示意圖。
圖3顯示通孔底部為氧化鋁時,硬遮罩(不包括氧化鋁系硬遮罩)除去前之半導體基板中,具有低介電常數層間絕緣膜之半導體基板之一形態之剖面圖之示意圖。
圖4顯示通孔底部為氧化鋁時,光阻除去前之半導體基板之具低介電常數層間絕緣膜之半導體基板之一形態之剖面圖之示意圖。
圖5顯示硬遮罩為氧化鋁時,光阻除去前之半導體基板之具低介電常數層間絕緣膜之半導體基板之一形態之剖面圖之示意圖。
Claims (8)
- 一種氧化鋁保護液,含有0.0001~20質量%之鹼土類金屬化合物,該鹼土類金屬係選自由鈹、鎂、鍶及鋇構成之群組中之一者以上。
- 如申請專利範圍第1項之氧化鋁保護液,其中,該鹼土類金屬化合物係選自由下列物質構成之群組中之一者以上: 硝酸鈹、乙酸鈹、氯化鈹、氫氧化鈹、亞硫酸鈹、氯酸鈹、過氯酸鈹、過氧化鈹、鉻酸鈹、氧化鈹、氰化鈹、溴化鈹、碳酸鈹、偏硼酸鈹、碘化鈹、四氟硼酸鈹、硫酸鈹、硫化鈹、及使氫氧化鈹與酸反應而得的鹽; 硝酸鎂、乙酸鎂、氯化鎂、氫氧化鎂、亞硫酸鎂、氯酸鎂、過氯酸鎂、過氧化鎂、鉻酸鎂、氧化鎂、氰化鎂、溴化鎂、碳酸鎂、偏硼酸鎂、碘化鎂、四氟硼酸鎂、硫酸鎂、硫化鎂、及使氫氧化鎂與酸反應而得的鹽; 硝酸鍶、乙酸鍶、氯化鍶、氫氧化鍶、亞硫酸鍶、氯酸鍶、過氯酸鍶、過氧化鍶、鉻酸鍶、氧化鍶、氰化鍶、溴化鍶、碳酸鍶、偏硼酸鍶、碘化鍶、四氟硼酸鍶、硫酸鍶、硫化鍶、及使氫氧化鍶與酸反應而得的鹽;及 硝酸鋇、乙酸鋇、氯化鋇、氫氧化鋇、亞硫酸鋇、氯酸鋇、過氯酸鋇、過氧化鋇、鉻酸鋇、氧化鋇、氰化鋇、溴化鋇、碳酸鋇、偏硼酸鋇、碘化鋇、四氟硼酸鋇、硫酸鋇、硫化鋇、及使氫氧化鋇與酸反應而得的鹽。
- 如申請專利範圍第1或2項之氧化鋁保護液,其中,該鹼土類金屬為鋇。
- 如申請專利範圍第1至3項中任一項之氧化鋁保護液,其中,該鹼土類金屬化合物係選自由硝酸鋇、乙酸鋇、氯化鋇及氫氧化鋇構成之群組中之一者以上。
- 如申請專利範圍第1至4項中任一項之氧化鋁保護液,其中,含有超過1質量%之該鹼土類金屬化合物。
- 如申請專利範圍第1至5項中任一項之氧化鋁保護液,其中,過氧化氫之含量未達0.002質量%。
- 一種氧化鋁之保護方法,包括下列步驟: 使用如申請專利範圍第1至6項中任一項之氧化鋁保護液對含有氧化鋁之氧化鋁層之表面之至少一部分進行處理。
- 一種具有氧化鋁層之半導體基板之製造方法,包括下列步驟: 使用如申請專利範圍第7項之氧化鋁之保護方法對氧化鋁層中含有之氧化鋁予以保護。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018-037144 | 2018-03-02 | ||
JP2018037144 | 2018-03-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201938480A true TW201938480A (zh) | 2019-10-01 |
Family
ID=67806207
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108106683A TW201938480A (zh) | 2018-03-02 | 2019-02-27 | 氧化鋁之保護液、保護方法及使用此保護方法之具有氧化鋁層之半導體基板之製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20210002551A1 (zh) |
EP (2) | EP3975223A1 (zh) |
JP (1) | JP7180667B2 (zh) |
KR (1) | KR20200125582A (zh) |
CN (1) | CN111699547A (zh) |
IL (1) | IL277046B1 (zh) |
TW (1) | TW201938480A (zh) |
WO (1) | WO2019167971A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102384110B1 (ko) | 2021-07-23 | 2022-04-08 | 주식회사 코닉스 | 반도체 및 디스플레이 에칭 공정용 저유전손실 소재 및 그 제조 장치 |
CN117712036B (zh) * | 2024-02-06 | 2024-04-16 | 中国科学院长春光学精密机械与物理研究所 | 一种硅通孔的形成方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4902664A (en) * | 1987-08-13 | 1990-02-20 | Engelhard Corporation | Thermally stabilized catalysts containing alumina and methods of making the same |
US5756222A (en) * | 1994-08-15 | 1998-05-26 | Applied Materials, Inc. | Corrosion-resistant aluminum article for semiconductor processing equipment |
JP2000284487A (ja) * | 1999-03-31 | 2000-10-13 | Mitsubishi Paper Mills Ltd | 平版印刷版の製版方法 |
JP4123644B2 (ja) * | 1999-06-22 | 2008-07-23 | トヨタ自動車株式会社 | 排ガス浄化触媒 |
JP2003195517A (ja) * | 2001-12-14 | 2003-07-09 | Shipley Co Llc | フォトレジスト用現像液 |
WO2005008762A1 (ja) * | 2003-07-17 | 2005-01-27 | Rorze Corporation | 低誘電率膜、及びその製造方法、並びにそれを用いた電子部品 |
WO2011121166A1 (en) | 2010-03-29 | 2011-10-06 | Silecs Oy | Etch resistant alumina based coatings |
CN102309458B (zh) * | 2010-07-09 | 2016-02-03 | 北京圣医耀科技发展有限责任公司 | 海藻酸钠交联莫西沙星缓释微球、其制备方法和用途以及含有所述微球的血管靶向栓塞剂 |
GB201012236D0 (en) * | 2010-07-21 | 2010-09-08 | Qinetiq Ltd | Method of fabrication of semiconductor device |
US9396946B2 (en) * | 2011-06-27 | 2016-07-19 | Cree, Inc. | Wet chemistry processes for fabricating a semiconductor device with increased channel mobility |
JP5981399B2 (ja) * | 2012-10-04 | 2016-08-31 | 富士フイルム株式会社 | 成膜用有機材料及びそれを用いて得られた有機光電変換素子、撮像素子、受光層形成方法、有機光電変換素子の製造方法 |
KR101433857B1 (ko) * | 2013-07-05 | 2014-08-26 | 연세대학교 산학협력단 | 과산화수소를 이용한 산화물 박막 형성 방법 및 산화물 박막 트랜지스터 제조 방법 |
EP3193359B1 (en) * | 2014-11-13 | 2019-12-18 | Mitsubishi Gas Chemical Company, Inc. | Semiconductor element cleaning method that suppresses damage to tantalum-containing materials |
US10629426B2 (en) * | 2014-11-13 | 2020-04-21 | Mitsubishi Gas Chemical Company, Inc. | Semiconductor element cleaning solution that suppresses damage to cobalt, and method for cleaning semiconductor element using same |
US10818705B2 (en) * | 2016-03-18 | 2020-10-27 | Ricoh Company, Ltd. | Method for manufacturing a field effect transistor, method for manufacturing a volatile semiconductor memory element, method for manufacturing a non-volatile semiconductor memory element, method for manufacturing a display element, method for manufacturing an image display device, and method for manufacturing a system |
EP3521506A4 (en) * | 2016-09-30 | 2020-05-13 | Zeon Corporation | PROCESS FOR PRODUCING LAMINATE |
-
2019
- 2019-02-27 JP JP2020503539A patent/JP7180667B2/ja active Active
- 2019-02-27 US US16/976,565 patent/US20210002551A1/en active Pending
- 2019-02-27 TW TW108106683A patent/TW201938480A/zh unknown
- 2019-02-27 EP EP21200791.8A patent/EP3975223A1/en active Pending
- 2019-02-27 IL IL277046A patent/IL277046B1/en unknown
- 2019-02-27 EP EP19759900.4A patent/EP3761346A4/en active Pending
- 2019-02-27 WO PCT/JP2019/007409 patent/WO2019167971A1/ja active Application Filing
- 2019-02-27 KR KR1020207019594A patent/KR20200125582A/ko active Search and Examination
- 2019-02-27 CN CN201980012078.6A patent/CN111699547A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
JP7180667B2 (ja) | 2022-11-30 |
WO2019167971A1 (ja) | 2019-09-06 |
EP3975223A1 (en) | 2022-03-30 |
IL277046A (en) | 2020-10-29 |
IL277046B1 (en) | 2024-05-01 |
KR20200125582A (ko) | 2020-11-04 |
JPWO2019167971A1 (ja) | 2021-03-04 |
US20210002551A1 (en) | 2021-01-07 |
EP3761346A4 (en) | 2021-04-21 |
EP3761346A1 (en) | 2021-01-06 |
CN111699547A (zh) | 2020-09-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11017995B2 (en) | Composition for TiN hard mask removal and etch residue cleaning | |
TWI667340B (zh) | 可抑制鈷之損壞的半導體元件之清洗液及利用該清洗液的半導體元件之清洗方法 | |
TWI678601B (zh) | 可抑制含鎢材料之損壞的半導體元件之清洗液及利用該清洗液的半導體元件之清洗方法 | |
CN115044375A (zh) | 蚀刻组合物 | |
TWI816635B (zh) | 半導體元件之洗淨用液體組成物、半導體元件之洗淨方法及半導體元件之製造方法 | |
KR102405631B1 (ko) | 탄탈을 포함하는 재료의 데미지를 억제한 반도체소자의 세정액, 및 이를 이용한 세정방법 | |
KR20160097201A (ko) | 표면 잔류물 제거용 세정 제형 | |
JP2023171815A (ja) | 水性組成物及びこれを用いた洗浄方法 | |
JP7294315B2 (ja) | アルミナのダメージを抑制した組成物及びこれを用いた半導体基板の製造方法 | |
JP7180667B2 (ja) | アルミナの保護液、保護方法及びこれを用いたアルミナ層を有する半導体基板の製造方法 | |
US20090008366A1 (en) | Etching composition and method for etching a substrate | |
JP2023171814A (ja) | 水性組成物及びこれを用いた洗浄方法 | |
EP1542080A1 (en) | Photoresist residue remover composition | |
TW202037706A (zh) | 含有次氯酸根離子及pH緩衝劑的半導體晶圓之處理液 | |
TW201311882A (zh) | 含氟清洗液 | |
JP2023539628A (ja) | エッチング、剥離、及びクリーニング用途用のアミンオキシド | |
TW202146638A (zh) | 化學清洗液及其使用方法 |