KR102766830B1 - 차아염소산 이온을 포함하는 반도체 웨이퍼의 처리액 - Google Patents

차아염소산 이온을 포함하는 반도체 웨이퍼의 처리액 Download PDF

Info

Publication number
KR102766830B1
KR102766830B1 KR1020207020591A KR20207020591A KR102766830B1 KR 102766830 B1 KR102766830 B1 KR 102766830B1 KR 1020207020591 A KR1020207020591 A KR 1020207020591A KR 20207020591 A KR20207020591 A KR 20207020591A KR 102766830 B1 KR102766830 B1 KR 102766830B1
Authority
KR
South Korea
Prior art keywords
treatment solution
ion
ions
hypochlorite
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020207020591A
Other languages
English (en)
Korean (ko)
Other versions
KR20200110335A (ko
Inventor
타마후미 시모다
타카유키 네기시
유키 킥카와
세이지 토노
Original Assignee
가부시키가이샤 도쿠야마
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도쿠야마 filed Critical 가부시키가이샤 도쿠야마
Priority to KR1020257003365A priority Critical patent/KR20250022896A/ko
Publication of KR20200110335A publication Critical patent/KR20200110335A/ko
Application granted granted Critical
Publication of KR102766830B1 publication Critical patent/KR102766830B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/046—Salts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
    • C11D17/0008—Detergent materials or soaps characterised by their shape or physical properties aqueous liquid non soap compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
    • C11D17/08—Liquid soap, e.g. for dispensers; capsuled
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/168—Organometallic compounds or orgometallic complexes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/24—Organic compounds containing halogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/28—Organic compounds containing halogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • H01L21/02068—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54—Cleaning of wafer edges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/56—Cleaning of wafer backside
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
KR1020207020591A 2018-01-16 2019-01-15 차아염소산 이온을 포함하는 반도체 웨이퍼의 처리액 Active KR102766830B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257003365A KR20250022896A (ko) 2018-01-16 2019-01-15 차아염소산 이온을 포함하는 반도체 웨이퍼의 처리액

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JPJP-P-2018-005202 2018-01-16
JP2018005201 2018-01-16
JPJP-P-2018-005201 2018-01-16
JP2018005202 2018-01-16
JP2018199949 2018-10-24
JPJP-P-2018-199949 2018-10-24
PCT/JP2019/000938 WO2019142788A1 (ja) 2018-01-16 2019-01-15 次亜塩素酸イオンを含む半導体ウェハの処理液

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020257003365A Division KR20250022896A (ko) 2018-01-16 2019-01-15 차아염소산 이온을 포함하는 반도체 웨이퍼의 처리액

Publications (2)

Publication Number Publication Date
KR20200110335A KR20200110335A (ko) 2020-09-23
KR102766830B1 true KR102766830B1 (ko) 2025-02-14

Family

ID=67301793

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020207020591A Active KR102766830B1 (ko) 2018-01-16 2019-01-15 차아염소산 이온을 포함하는 반도체 웨이퍼의 처리액
KR1020257003365A Pending KR20250022896A (ko) 2018-01-16 2019-01-15 차아염소산 이온을 포함하는 반도체 웨이퍼의 처리액

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020257003365A Pending KR20250022896A (ko) 2018-01-16 2019-01-15 차아염소산 이온을 포함하는 반도체 웨이퍼의 처리액

Country Status (8)

Country Link
US (1) US11390829B2 (https=)
EP (1) EP3726565A4 (https=)
JP (3) JP6798045B2 (https=)
KR (2) KR102766830B1 (https=)
CN (1) CN111684570B (https=)
SG (1) SG11202006733TA (https=)
TW (4) TWI899006B (https=)
WO (1) WO2019142788A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102766830B1 (ko) * 2018-01-16 2025-02-14 가부시키가이샤 도쿠야마 차아염소산 이온을 포함하는 반도체 웨이퍼의 처리액
JP6982686B2 (ja) * 2018-05-23 2021-12-17 株式会社トクヤマ 次亜塩素酸第４級アルキルアンモニウム溶液の製造方法および半導体ウエハの処理方法
JP7219061B2 (ja) 2018-11-14 2023-02-07 関東化学株式会社 ルテニウム除去用組成物
WO2021060234A1 (ja) 2019-09-27 2021-04-01 株式会社トクヤマ ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法
CN120060857A (zh) 2019-09-27 2025-05-30 株式会社德山 钌的半导体用处理液及其制造方法
KR102769981B1 (ko) * 2019-11-22 2025-02-18 가부시끼가이샤 도꾸야마 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법
TWI899164B (zh) 2020-02-25 2025-10-01 日商德山股份有限公司 釕之半導體用處理液
US12509632B2 (en) 2020-03-31 2025-12-30 Tokuyama Corporation Treatment liquid for semiconductors and method for producing same
WO2022030627A1 (ja) 2020-08-07 2022-02-10 株式会社トクヤマ 半導体ウエハ用処理液
JP7553577B2 (ja) * 2020-09-03 2024-09-18 富士フイルム株式会社 組成物、基板の処理方法
JP7819114B2 (ja) 2020-11-26 2026-02-24 株式会社トクヤマ 半導体ウェハの処理液及びその製造方法
KR20230104741A (ko) 2020-12-18 2023-07-10 가부시끼가이샤 도꾸야마 천이 금속의 반도체의 처리 방법, 및 천이 금속 산화물의 환원제 함유 처리액
WO2022131186A1 (ja) * 2020-12-18 2022-06-23 株式会社トクヤマ 遷移金属の半導体の処理方法、および遷移金属酸化物の還元剤含有処理液
KR20220136262A (ko) 2021-03-31 2022-10-07 가부시끼가이샤 도꾸야마 반도체용 처리액
TW202424172A (zh) 2022-09-29 2024-06-16 日商德山股份有限公司 乾式蝕刻殘渣去除液
KR102877889B1 (ko) * 2022-10-03 2025-10-28 가부시끼가이샤 도꾸야마 반도체용 처리액
WO2026004729A1 (ja) * 2024-06-28 2026-01-02 株式会社トクヤマ 半導体用基板の処理液

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001240985A (ja) * 1999-12-20 2001-09-04 Hitachi Ltd 固体表面の処理方法及び処理液並びにこれらを用いた電子デバイスの製造方法

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2517187C3 (de) 1975-04-18 1980-11-13 Aeg-Kanis Turbinenfabrik Gmbh, 8500 Nuernberg Hydraulische Turbinendrehvorrichtung
JPS5523325U (https=) 1978-07-28 1980-02-15
IT1203814B (it) * 1986-06-30 1989-02-23 Fidia Farmaceutici Esteri dell'acido alginico
JP3649771B2 (ja) * 1995-05-15 2005-05-18 栗田工業株式会社 洗浄方法
JP2001231373A (ja) 2000-02-22 2001-08-28 Gumma Prefecture 植物の栽培方法及びその装置
JP4510979B2 (ja) 2000-02-23 2010-07-28 ルネサスエレクトロニクス株式会社 ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法
JP3664967B2 (ja) 2000-10-20 2005-06-29 シャープ株式会社 半導体集積回路
JP3585437B2 (ja) 2000-11-22 2004-11-04 株式会社荏原製作所 ルテニウム膜のエッチング方法
JP2003119494A (ja) 2001-10-05 2003-04-23 Nec Corp 洗浄組成物およびこれを用いた洗浄方法と洗浄装置
TW200413522A (en) * 2002-11-08 2004-08-01 Sumitomo Chemical Co Washing liquid for semiconductor substrate
JP2005101479A (ja) * 2002-11-08 2005-04-14 Sumitomo Chemical Co Ltd 半導体基板用洗浄液
JP4232002B2 (ja) * 2003-01-16 2009-03-04 日本電気株式会社 デバイス基板用の洗浄組成物及び該洗浄組成物を用いた洗浄方法並びに洗浄装置
KR101056544B1 (ko) * 2003-08-19 2011-08-11 아반토르 퍼포먼스 머티리얼스, 인크. 마이크로전자 기판용 박리 및 세정 조성물
SG150508A1 (en) 2004-02-11 2009-03-30 Mallinckrodt Baker Inc Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof
EP2128897B1 (en) 2007-03-16 2015-05-06 Fujitsu Limited Silicon dielectric treating agent for use after etching, process for producing semiconductor device, and semiconductor device
JP2009081247A (ja) 2007-09-26 2009-04-16 Panasonic Corp ルテニウム膜のエッチング方法
TW200946621A (en) * 2007-10-29 2009-11-16 Ekc Technology Inc Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use
WO2009064745A1 (en) * 2007-11-13 2009-05-22 Sachem, Inc. High negative zeta potential polyhedral silsesquioxane composition and method for damage free semiconductor wet clean
JP2009231354A (ja) 2008-03-19 2009-10-08 Fujifilm Corp 半導体デバイス用洗浄液、および洗浄方法
JP5086893B2 (ja) * 2008-05-26 2012-11-28 花王株式会社 半導体デバイス用基板用の洗浄液
JP5523325B2 (ja) 2008-09-09 2014-06-18 昭和電工株式会社 チタン系金属、タングステン系金属、チタンタングステン系金属またはそれらの窒化物のエッチング液
EP2514855A1 (en) 2009-12-17 2012-10-24 Showa Denko K.K. Composition for etching ruthenium-based metal and method for preparing same
CN102234597B (zh) * 2010-04-26 2015-05-27 东友精细化工有限公司 清洗组合物
US8211800B2 (en) * 2010-08-23 2012-07-03 Kabushiki Kaisha Toshiba Ru cap metal post cleaning method and cleaning chemical
JP2013001620A (ja) * 2011-06-20 2013-01-07 Evatech Corp 弱酸性次亜塩素酸、並びにその製造装置および製造方法
JP2014062297A (ja) 2012-09-20 2014-04-10 Toshiba Corp 処理装置、処理液の製造方法、および電子デバイスの製造方法
KR102338550B1 (ko) * 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
WO2016042408A2 (en) * 2014-09-17 2016-03-24 Atmi Taiwan Co., Ltd. Compositions for etching titanium nitride having compatability with silicon germanide and tungsten
CN106796878B (zh) * 2014-11-13 2021-02-09 三菱瓦斯化学株式会社 抑制了包含钨的材料的损伤的半导体元件的清洗液、及使用其的半导体元件的清洗方法
WO2016140246A1 (ja) * 2015-03-04 2016-09-09 日立化成株式会社 Ｃｍｐ用研磨液、及び、これを用いた研磨方法
TWI816635B (zh) * 2015-10-15 2023-10-01 日商三菱瓦斯化學股份有限公司 半導體元件之洗淨用液體組成物、半導體元件之洗淨方法及半導體元件之製造方法
KR102111307B1 (ko) 2016-06-02 2020-05-15 후지필름 가부시키가이샤 처리액, 기판의 세정 방법 및 레지스트의 제거 방법
KR102766830B1 (ko) * 2018-01-16 2025-02-14 가부시키가이샤 도쿠야마 차아염소산 이온을 포함하는 반도체 웨이퍼의 처리액
WO2020049955A1 (ja) * 2018-09-06 2020-03-12 富士フイルム株式会社 薬液、基板の処理方法
KR102521227B1 (ko) * 2018-09-12 2023-04-13 후지필름 가부시키가이샤 약액, 기판의 처리 방법
US11898081B2 (en) * 2019-11-21 2024-02-13 Tokyo Ohka Kogyo Co., Ltd. Ruthenium-etching solution, method for manufacturing ruthenium-etching solution, method for processing object to be processed, and method for manufacturing ruthenium-containing wiring
KR102769981B1 (ko) * 2019-11-22 2025-02-18 가부시끼가이샤 도꾸야마 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001240985A (ja) * 1999-12-20 2001-09-04 Hitachi Ltd 固体表面の処理方法及び処理液並びにこれらを用いた電子デバイスの製造方法

Also Published As

Publication number Publication date
TW202210663A (zh) 2022-03-16
JP7590504B2 (ja) 2024-11-26
TWI877955B (zh) 2025-03-21
JP7311477B2 (ja) 2023-07-19
TW201932588A (zh) 2019-08-16
TW202417601A (zh) 2024-05-01
KR20250022896A (ko) 2025-02-17
TW202521677A (zh) 2025-06-01
US20210062115A1 (en) 2021-03-04
EP3726565A4 (en) 2021-10-13
WO2019142788A1 (ja) 2019-07-25
TWI843026B (zh) 2024-05-21
US11390829B2 (en) 2022-07-19
TWI899006B (zh) 2025-09-21
CN111684570A (zh) 2020-09-18
US20220325205A1 (en) 2022-10-13
JP2023126320A (ja) 2023-09-07
SG11202006733TA (en) 2020-08-28
CN111684570B (zh) 2024-02-27
JP6798045B2 (ja) 2020-12-09
JP2021040151A (ja) 2021-03-11
JPWO2019142788A1 (ja) 2020-11-19
KR20200110335A (ko) 2020-09-23
EP3726565A1 (en) 2020-10-21

Similar Documents

Publication Publication Date Title
KR102766830B1 (ko) 차아염소산 이온을 포함하는 반도체 웨이퍼의 처리액
JP7646887B2 (ja) 次亜塩素酸イオン、及びｐＨ緩衝剤を含む半導体ウェハの処理液
JP7477466B2 (ja) オニウム塩を含む半導体ウェハの処理液
JP7735233B2 (ja) 半導体ウエハ用処理液
US20220328320A1 (en) Semiconductor treatment liquid
KR20210015796A (ko) 차아염소산 제4급 알킬 암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 세정 방법
TW202124694A (zh) 次氯酸四級烷基銨溶液、其製造方法及半導體晶圓的處理方法
KR20230048015A (ko) 차아브롬산 이온 및 pH 완충제를 함유하는 반도체 웨이퍼의 처리액
US12612580B2 (en) Treatment liquid for semiconductor wafers, which contains hypochlorite ions
KR20230127774A (ko) 마스크 세정액 조성물
JP2022002291A (ja) オニウム塩を含む半導体ウェハの処理液

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

A107 Divisional application of patent
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000