TWI899006B - 含有次氯酸離子的半導體晶圓處理液 - Google Patents

含有次氯酸離子的半導體晶圓處理液

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Publication number
TWI899006B
TWI899006B TW114106215A TW114106215A TWI899006B TW I899006 B TWI899006 B TW I899006B TW 114106215 A TW114106215 A TW 114106215A TW 114106215 A TW114106215 A TW 114106215A TW I899006 B TWI899006 B TW I899006B
Authority
TW
Taiwan
Prior art keywords
ions
solution
treatment solution
hypochlorous acid
cleaning
Prior art date
Application number
TW114106215A
Other languages
English (en)
Chinese (zh)
Other versions
TW202521677A (zh
Inventor
下田享史
根岸貴幸
吉川由樹
東野誠司
Original Assignee
日商德山股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商德山股份有限公司 filed Critical 日商德山股份有限公司
Publication of TW202521677A publication Critical patent/TW202521677A/zh
Application granted granted Critical
Publication of TWI899006B publication Critical patent/TWI899006B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/046—Salts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
    • C11D17/0008—Detergent materials or soaps characterised by their shape or physical properties aqueous liquid non soap compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
    • C11D17/08—Liquid soap, e.g. for dispensers; capsuled
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/168—Organometallic compounds or orgometallic complexes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/24—Organic compounds containing halogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/28—Organic compounds containing halogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54—Cleaning of wafer edges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/56—Cleaning of wafer backside
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
TW114106215A 2018-01-16 2019-01-16 含有次氯酸離子的半導體晶圓處理液 TWI899006B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2018-005201 2018-01-16
JP2018-005202 2018-01-16
JP2018005201 2018-01-16
JP2018005202 2018-01-16
JP2018199949 2018-10-24
JP2018-199949 2018-10-24

Publications (2)

Publication Number Publication Date
TW202521677A TW202521677A (zh) 2025-06-01
TWI899006B true TWI899006B (zh) 2025-09-21

Family

ID=67301793

Family Applications (4)

Application Number Title Priority Date Filing Date
TW114106215A TWI899006B (zh) 2018-01-16 2019-01-16 含有次氯酸離子的半導體晶圓處理液
TW108101608A TW201932588A (zh) 2018-01-16 2019-01-16 含有次氯酸離子的半導體晶圓處理液
TW112149234A TWI877955B (zh) 2018-01-16 2019-01-16 含有次氯酸離子的半導體晶圓處理液
TW110141481A TWI843026B (zh) 2018-01-16 2019-01-16 含有次氯酸離子的半導體晶圓處理液

Family Applications After (3)

Application Number Title Priority Date Filing Date
TW108101608A TW201932588A (zh) 2018-01-16 2019-01-16 含有次氯酸離子的半導體晶圓處理液
TW112149234A TWI877955B (zh) 2018-01-16 2019-01-16 含有次氯酸離子的半導體晶圓處理液
TW110141481A TWI843026B (zh) 2018-01-16 2019-01-16 含有次氯酸離子的半導體晶圓處理液

Country Status (8)

Country Link
US (1) US11390829B2 (https=)
EP (1) EP3726565A4 (https=)
JP (3) JP6798045B2 (https=)
KR (2) KR102766830B1 (https=)
CN (1) CN111684570B (https=)
SG (1) SG11202006733TA (https=)
TW (4) TWI899006B (https=)
WO (1) WO2019142788A1 (https=)

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JP6982686B2 (ja) * 2018-05-23 2021-12-17 株式会社トクヤマ 次亜塩素酸第４級アルキルアンモニウム溶液の製造方法および半導体ウエハの処理方法
JP7219061B2 (ja) 2018-11-14 2023-02-07 関東化学株式会社 ルテニウム除去用組成物
WO2021060234A1 (ja) 2019-09-27 2021-04-01 株式会社トクヤマ ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法
CN120060857A (zh) 2019-09-27 2025-05-30 株式会社德山 钌的半导体用处理液及其制造方法
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TWI899164B (zh) 2020-02-25 2025-10-01 日商德山股份有限公司 釕之半導體用處理液
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JP7819114B2 (ja) 2020-11-26 2026-02-24 株式会社トクヤマ 半導体ウェハの処理液及びその製造方法
KR20230104741A (ko) 2020-12-18 2023-07-10 가부시끼가이샤 도꾸야마 천이 금속의 반도체의 처리 방법, 및 천이 금속 산화물의 환원제 함유 처리액
WO2022131186A1 (ja) * 2020-12-18 2022-06-23 株式会社トクヤマ 遷移金属の半導体の処理方法、および遷移金属酸化物の還元剤含有処理液
KR20220136262A (ko) 2021-03-31 2022-10-07 가부시끼가이샤 도꾸야마 반도체용 처리액
TW202424172A (zh) 2022-09-29 2024-06-16 日商德山股份有限公司 乾式蝕刻殘渣去除液
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TW201641660A (zh) * 2015-03-04 2016-12-01 日立化成股份有限公司 Cmp用研磨液及使用其的研磨方法

Also Published As

Publication number Publication date
TW202210663A (zh) 2022-03-16
JP7590504B2 (ja) 2024-11-26
TWI877955B (zh) 2025-03-21
JP7311477B2 (ja) 2023-07-19
TW201932588A (zh) 2019-08-16
TW202417601A (zh) 2024-05-01
KR20250022896A (ko) 2025-02-17
TW202521677A (zh) 2025-06-01
US20210062115A1 (en) 2021-03-04
EP3726565A4 (en) 2021-10-13
WO2019142788A1 (ja) 2019-07-25
TWI843026B (zh) 2024-05-21
US11390829B2 (en) 2022-07-19
CN111684570A (zh) 2020-09-18
US20220325205A1 (en) 2022-10-13
JP2023126320A (ja) 2023-09-07
SG11202006733TA (en) 2020-08-28
CN111684570B (zh) 2024-02-27
JP6798045B2 (ja) 2020-12-09
JP2021040151A (ja) 2021-03-11
JPWO2019142788A1 (ja) 2020-11-19
KR20200110335A (ko) 2020-09-23
EP3726565A1 (en) 2020-10-21
KR102766830B1 (ko) 2025-02-14

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