TWI843164B - 基板處理裝置及其調整方法 - Google Patents

基板處理裝置及其調整方法 Download PDF

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Publication number
TWI843164B
TWI843164B TW111128514A TW111128514A TWI843164B TW I843164 B TWI843164 B TW I843164B TW 111128514 A TW111128514 A TW 111128514A TW 111128514 A TW111128514 A TW 111128514A TW I843164 B TWI843164 B TW I843164B
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Taiwan
Prior art keywords
wafer
substrate
processing
film
information
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TW111128514A
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English (en)
Chinese (zh)
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TW202247275A (zh
Inventor
天野嘉文
守田聰
池邊亮二
宮本勳武
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日商東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/53—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
TW111128514A 2016-03-30 2017-03-06 基板處理裝置及其調整方法 TWI843164B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016068212A JP6611652B2 (ja) 2016-03-30 2016-03-30 基板処理装置の管理方法、及び基板処理システム
JP2016-068212 2016-03-30

Publications (2)

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TW202247275A TW202247275A (zh) 2022-12-01
TWI843164B true TWI843164B (zh) 2024-05-21

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Family Applications (4)

Application Number Title Priority Date Filing Date
TW111128514A TWI843164B (zh) 2016-03-30 2017-03-06 基板處理裝置及其調整方法
TW106107144A TWI677021B (zh) 2016-03-30 2017-03-06 基板處理裝置之管理方法及基板處理系統
TW109139098A TWI777287B (zh) 2016-03-30 2017-03-06 基板處理裝置及其調整方法
TW108129178A TWI713105B (zh) 2016-03-30 2017-03-06 基板處理裝置之管理方法及基板處理系統

Family Applications After (3)

Application Number Title Priority Date Filing Date
TW106107144A TWI677021B (zh) 2016-03-30 2017-03-06 基板處理裝置之管理方法及基板處理系統
TW109139098A TWI777287B (zh) 2016-03-30 2017-03-06 基板處理裝置及其調整方法
TW108129178A TWI713105B (zh) 2016-03-30 2017-03-06 基板處理裝置之管理方法及基板處理系統

Country Status (5)

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US (3) US10128137B2 (enExample)
JP (1) JP6611652B2 (enExample)
KR (2) KR102351528B1 (enExample)
CN (2) CN114188243B (enExample)
TW (4) TWI843164B (enExample)

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JP6611652B2 (ja) * 2016-03-30 2019-11-27 東京エレクトロン株式会社 基板処理装置の管理方法、及び基板処理システム
TWI746907B (zh) * 2017-12-05 2021-11-21 日商斯庫林集團股份有限公司 煙霧判定方法、基板處理方法及基板處理裝置
JP7051455B2 (ja) * 2018-01-16 2022-04-11 キオクシア株式会社 パターン形成装置および半導体装置の製造方法
JP6995143B2 (ja) * 2018-02-05 2022-01-14 東京エレクトロン株式会社 基板処理システム、基板処理方法及びコンピュータ記憶媒体
WO2019159735A1 (ja) * 2018-02-16 2019-08-22 東京エレクトロン株式会社 加工装置
WO2019208214A1 (ja) * 2018-04-23 2019-10-31 東京エレクトロン株式会社 測定方法および測定装置
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JP7105135B2 (ja) * 2018-08-17 2022-07-22 東京エレクトロン株式会社 処理条件補正方法及び基板処理システム
JP7134033B2 (ja) * 2018-09-06 2022-09-09 東京エレクトロン株式会社 基板状態判定装置、基板処理装置、モデル作成装置及び基板状態判定方法
JP7226949B2 (ja) 2018-09-20 2023-02-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理システム
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CN113439235B (zh) * 2019-02-28 2024-06-14 东京毅力科创株式会社 基片处理装置、基片处理方法和存储介质
JP7309485B2 (ja) * 2019-07-04 2023-07-18 東京エレクトロン株式会社 エッチング装置およびエッチング方法
JP7336967B2 (ja) * 2019-11-21 2023-09-01 東京エレクトロン株式会社 基板処理装置、および基板処理方法
JP7443163B2 (ja) * 2020-05-27 2024-03-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
WO2022091779A1 (ja) * 2020-10-27 2022-05-05 東京エレクトロン株式会社 反り量推定装置及び反り量推定方法
JP7580263B2 (ja) * 2020-12-18 2024-11-11 東京エレクトロン株式会社 表示装置、表示方法、及び記憶媒体
KR102482167B1 (ko) * 2022-04-27 2022-12-28 주식회사 솔텍크 서브 컴포넌트 모니터링 시스템 및 방법
TW202403948A (zh) * 2022-06-17 2024-01-16 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法

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TW200301849A (en) * 2001-12-25 2003-07-16 Tokyo Electron Ltd Substrate processing method and substrate processing apparatus
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US20150248127A1 (en) * 2014-03-03 2015-09-03 Samsung Electronics Co., Ltd. Process management systems using comparison of statistical data to process parameters and process management devices

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Publication number Publication date
KR20220010760A (ko) 2022-01-26
CN107275200A (zh) 2017-10-20
US20190043742A1 (en) 2019-02-07
CN107275200B (zh) 2021-12-03
TWI777287B (zh) 2022-09-11
JP2017183496A (ja) 2017-10-05
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