KR102351528B1 - 기판 처리 장치의 관리 방법, 및 기판 처리 시스템 - Google Patents

기판 처리 장치의 관리 방법, 및 기판 처리 시스템 Download PDF

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KR102351528B1
KR102351528B1 KR1020170029944A KR20170029944A KR102351528B1 KR 102351528 B1 KR102351528 B1 KR 102351528B1 KR 1020170029944 A KR1020170029944 A KR 1020170029944A KR 20170029944 A KR20170029944 A KR 20170029944A KR 102351528 B1 KR102351528 B1 KR 102351528B1
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wafer
processing
imaging
substrate
film
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KR20170113099A (ko
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요시후미 아마노
사토시 모리타
료지 이케베
이사무 미야모토
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도쿄엘렉트론가부시키가이샤
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    • H01L21/02052—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H01L21/6704—
    • H01L21/67242—
    • H01L21/68764—
    • H01L22/12—
    • H01L22/20—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/53—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Cleaning Or Drying Semiconductors (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Weting (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020170029944A 2016-03-30 2017-03-09 기판 처리 장치의 관리 방법, 및 기판 처리 시스템 Active KR102351528B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020220003982A KR102534576B1 (ko) 2016-03-30 2022-01-11 기판 처리 장치의 관리 방법, 및 기판 처리 시스템

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2016-068212 2016-03-30
JP2016068212A JP6611652B2 (ja) 2016-03-30 2016-03-30 基板処理装置の管理方法、及び基板処理システム

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KR1020220003982A Division KR102534576B1 (ko) 2016-03-30 2022-01-11 기판 처리 장치의 관리 방법, 및 기판 처리 시스템

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KR20170113099A KR20170113099A (ko) 2017-10-12
KR102351528B1 true KR102351528B1 (ko) 2022-01-14

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KR1020220003982A Active KR102534576B1 (ko) 2016-03-30 2022-01-11 기판 처리 장치의 관리 방법, 및 기판 처리 시스템

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Country Status (5)

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US (3) US10128137B2 (enExample)
JP (1) JP6611652B2 (enExample)
KR (2) KR102351528B1 (enExample)
CN (2) CN114188243B (enExample)
TW (4) TWI677021B (enExample)

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JP6611652B2 (ja) * 2016-03-30 2019-11-27 東京エレクトロン株式会社 基板処理装置の管理方法、及び基板処理システム
TWI746907B (zh) * 2017-12-05 2021-11-21 日商斯庫林集團股份有限公司 煙霧判定方法、基板處理方法及基板處理裝置
JP7051455B2 (ja) * 2018-01-16 2022-04-11 キオクシア株式会社 パターン形成装置および半導体装置の製造方法
JP6995143B2 (ja) * 2018-02-05 2022-01-14 東京エレクトロン株式会社 基板処理システム、基板処理方法及びコンピュータ記憶媒体
JP7261786B2 (ja) * 2018-02-16 2023-04-20 東京エレクトロン株式会社 加工装置
WO2019208214A1 (ja) * 2018-04-23 2019-10-31 東京エレクトロン株式会社 測定方法および測定装置
JP7119584B2 (ja) * 2018-05-29 2022-08-17 オムロン株式会社 三次元計測装置、三次元計測装置の位置表示方法およびプログラム
JP7105135B2 (ja) * 2018-08-17 2022-07-22 東京エレクトロン株式会社 処理条件補正方法及び基板処理システム
JP7134033B2 (ja) * 2018-09-06 2022-09-09 東京エレクトロン株式会社 基板状態判定装置、基板処理装置、モデル作成装置及び基板状態判定方法
JP7226949B2 (ja) 2018-09-20 2023-02-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理システム
KR102211781B1 (ko) * 2018-11-23 2021-02-05 세메스 주식회사 기판 처리 장치, 편심 검사 장치 및 방법
JP7166427B2 (ja) * 2019-02-28 2022-11-07 東京エレクトロン株式会社 基板処理装置、基板処理方法、及び記憶媒体
JP7309485B2 (ja) * 2019-07-04 2023-07-18 東京エレクトロン株式会社 エッチング装置およびエッチング方法
JP7336967B2 (ja) * 2019-11-21 2023-09-01 東京エレクトロン株式会社 基板処理装置、および基板処理方法
JP7443163B2 (ja) * 2020-05-27 2024-03-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
WO2022091779A1 (ja) * 2020-10-27 2022-05-05 東京エレクトロン株式会社 反り量推定装置及び反り量推定方法
JP7580263B2 (ja) * 2020-12-18 2024-11-11 東京エレクトロン株式会社 表示装置、表示方法、及び記憶媒体
KR102482167B1 (ko) * 2022-04-27 2022-12-28 주식회사 솔텍크 서브 컴포넌트 모니터링 시스템 및 방법
TW202403948A (zh) * 2022-06-17 2024-01-16 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
CN118116856A (zh) * 2022-11-29 2024-05-31 无锡华瑛微电子技术有限公司 晶圆定位系统和方法

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