TWI839076B - 用於功率及rf應用的工程基板結構 - Google Patents
用於功率及rf應用的工程基板結構 Download PDFInfo
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- TWI839076B TWI839076B TW112101490A TW112101490A TWI839076B TW I839076 B TWI839076 B TW I839076B TW 112101490 A TW112101490 A TW 112101490A TW 112101490 A TW112101490 A TW 112101490A TW I839076 B TWI839076 B TW I839076B
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- layer
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- single crystal
- silicon
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- 239000000758 substrate Substances 0.000 title claims abstract description 126
- 230000004888 barrier function Effects 0.000 claims abstract description 48
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000000919 ceramic Substances 0.000 claims abstract description 24
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 18
- 239000010410 layer Substances 0.000 claims description 454
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- 239000012790 adhesive layer Substances 0.000 claims description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 45
- 229910052710 silicon Inorganic materials 0.000 claims description 43
- 239000010703 silicon Substances 0.000 claims description 43
- 239000013078 crystal Substances 0.000 claims description 37
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 26
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 25
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 17
- 229910002601 GaN Inorganic materials 0.000 claims description 13
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 8
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- 239000010980 sapphire Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
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- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 89
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
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- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
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- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 4
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- 229910052905 tridymite Inorganic materials 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
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- 238000005498 polishing Methods 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 230000007547 defect Effects 0.000 description 2
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 2
- 238000010943 off-gassing Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
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- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000011573 trace mineral Substances 0.000 description 2
- 235000013619 trace mineral Nutrition 0.000 description 2
- -1 yttrium oxide) Chemical compound 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
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- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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| US10297445B2 (en) | 2016-06-14 | 2019-05-21 | QROMIS, Inc. | Engineered substrate structure for power and RF applications |
| US10622468B2 (en) | 2017-02-21 | 2020-04-14 | QROMIS, Inc. | RF device integrated on an engineered substrate |
| US10734303B2 (en) * | 2017-11-06 | 2020-08-04 | QROMIS, Inc. | Power and RF devices implemented using an engineered substrate structure |
| US10586844B2 (en) * | 2018-01-23 | 2020-03-10 | Texas Instruments Incorporated | Integrated trench capacitor formed in an epitaxial layer |
| TWI692869B (zh) * | 2019-05-03 | 2020-05-01 | 世界先進積體電路股份有限公司 | 基底及其製造方法 |
| CN111987140B (zh) * | 2019-05-21 | 2025-03-18 | 世界先进积体电路股份有限公司 | 基底及其制造方法 |
| JP7319227B2 (ja) | 2020-05-11 | 2023-08-01 | 信越化学工業株式会社 | Ｉｉｉ－ｖ族化合物結晶用ベース基板及びその製造方法 |
| WO2021250991A1 (ja) | 2020-06-09 | 2021-12-16 | 信越化学工業株式会社 | Ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法 |
| JP7618401B2 (ja) | 2020-07-01 | 2025-01-21 | 信越化学工業株式会社 | 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法 |
| KR102446604B1 (ko) | 2021-01-04 | 2022-09-26 | 한국과학기술원 | 스트레인드 채널 성장 구조, 및 그를 이용한 스트레인드 채널 및 소자 제조 방법 |
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| JP7549549B2 (ja) * | 2021-02-26 | 2024-09-11 | 信越半導体株式会社 | 窒化物半導体基板およびその製造方法 |
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| WO2022259651A1 (ja) | 2021-06-08 | 2022-12-15 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
| JP7643250B2 (ja) * | 2021-08-10 | 2025-03-11 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
| CN117941030A (zh) * | 2021-09-21 | 2024-04-26 | 信越半导体股份有限公司 | 氮化物半导体基板及其制造方法 |
| WO2023063278A1 (ja) * | 2021-10-15 | 2023-04-20 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
| WO2023063046A1 (ja) * | 2021-10-15 | 2023-04-20 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
| JP7755451B2 (ja) | 2021-10-27 | 2025-10-16 | 信越化学工業株式会社 | エピタキシャル成長用種基板およびその製造方法、ならびに半導体基板およびその製造方法 |
| US20250059676A1 (en) | 2021-12-21 | 2025-02-20 | Shin-Etsu Handotai Co., Ltd. | Nitride semiconductor substrate and method for producing nitride semiconductor substrate |
| JP7657530B2 (ja) * | 2021-12-28 | 2025-04-07 | 信越化学工業株式会社 | 高特性エピタキシャル成長用基板とその製造方法 |
| JP7675679B2 (ja) | 2022-03-18 | 2025-05-13 | 信越化学工業株式会社 | 高特性エピ用種基板、高特性エピ用種基板の製造方法、半導体基板、および半導体基板の製造方法 |
| JP7768842B2 (ja) | 2022-06-03 | 2025-11-12 | 信越化学工業株式会社 | Ｉｉｉ族窒化物単結晶基板の製造方法 |
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| CN116230643A (zh) * | 2023-03-09 | 2023-06-06 | 东科半导体(安徽)股份有限公司 | GaN器件用陶瓷基板及其制备方法和GaN器件及其制备方法 |
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| TW200704835A (en) * | 2005-06-17 | 2007-02-01 | Northrop Grumman Corp | Multilayered substrate obtained via wafer bonding for power applications |
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