EP3469119A4 - MANIPULATED SUBSTRATE STRUCTURE FOR POWER AND HF APPLICATIONS - Google Patents

MANIPULATED SUBSTRATE STRUCTURE FOR POWER AND HF APPLICATIONS Download PDF

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Publication number
EP3469119A4
EP3469119A4 EP17813933.3A EP17813933A EP3469119A4 EP 3469119 A4 EP3469119 A4 EP 3469119A4 EP 17813933 A EP17813933 A EP 17813933A EP 3469119 A4 EP3469119 A4 EP 3469119A4
Authority
EP
European Patent Office
Prior art keywords
power
radio frequency
substrate structure
frequency applications
technical substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP17813933.3A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP3469119A1 (en
Inventor
Vladimir Odnoblyudov
Cem Basceri
Shari Farrens
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qromis Inc
Original Assignee
Qromis Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qromis Inc filed Critical Qromis Inc
Publication of EP3469119A1 publication Critical patent/EP3469119A1/en
Publication of EP3469119A4 publication Critical patent/EP3469119A4/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10P14/2921—
    • H10P14/3238—
    • H10P14/3241—
    • H10P14/3251—
    • H10P14/3411—
    • H10P14/3456—
    • H10P14/416—
    • H10P14/6349—
    • H10P90/1916—
    • H10P95/94—
    • H10W10/181—
    • H10P14/3211—
    • H10P14/3414—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Peptides Or Proteins (AREA)
EP17813933.3A 2016-06-14 2017-06-13 MANIPULATED SUBSTRATE STRUCTURE FOR POWER AND HF APPLICATIONS Pending EP3469119A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662350084P 2016-06-14 2016-06-14
US201662350077P 2016-06-14 2016-06-14
PCT/US2017/037252 WO2017218536A1 (en) 2016-06-14 2017-06-13 Engineered substrate structure for power and rf applications

Publications (2)

Publication Number Publication Date
EP3469119A1 EP3469119A1 (en) 2019-04-17
EP3469119A4 true EP3469119A4 (en) 2020-02-26

Family

ID=60664230

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17813933.3A Pending EP3469119A4 (en) 2016-06-14 2017-06-13 MANIPULATED SUBSTRATE STRUCTURE FOR POWER AND HF APPLICATIONS

Country Status (7)

Country Link
EP (1) EP3469119A4 (enExample)
JP (5) JP6626607B2 (enExample)
KR (1) KR102361057B1 (enExample)
CN (2) CN109844184B (enExample)
SG (1) SG11201810919UA (enExample)
TW (4) TWI894863B (enExample)
WO (1) WO2017218536A1 (enExample)

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TWI894863B (zh) * 2016-06-14 2025-08-21 美商克若密斯股份有限公司 用於功率及rf應用的工程基板結構
US10297445B2 (en) 2016-06-14 2019-05-21 QROMIS, Inc. Engineered substrate structure for power and RF applications
US10622468B2 (en) 2017-02-21 2020-04-14 QROMIS, Inc. RF device integrated on an engineered substrate
US10734303B2 (en) * 2017-11-06 2020-08-04 QROMIS, Inc. Power and RF devices implemented using an engineered substrate structure
US10586844B2 (en) * 2018-01-23 2020-03-10 Texas Instruments Incorporated Integrated trench capacitor formed in an epitaxial layer
TWI692869B (zh) * 2019-05-03 2020-05-01 世界先進積體電路股份有限公司 基底及其製造方法
CN111987140B (zh) * 2019-05-21 2025-03-18 世界先进积体电路股份有限公司 基底及其制造方法
JP7319227B2 (ja) 2020-05-11 2023-08-01 信越化学工業株式会社 Ｉｉｉ－ｖ族化合物結晶用ベース基板及びその製造方法
CN115698391A (zh) 2020-06-09 2023-02-03 信越化学工业株式会社 Iii族氮化物系外延生长用基板及其制造方法
JP7618401B2 (ja) 2020-07-01 2025-01-21 信越化学工業株式会社 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法
KR102446604B1 (ko) 2021-01-04 2022-09-26 한국과학기술원 스트레인드 채널 성장 구조, 및 그를 이용한 스트레인드 채널 및 소자 제조 방법
CN116848296A (zh) 2021-02-05 2023-10-03 信越半导体株式会社 氮化物半导体基板及其制造方法
JP7549549B2 (ja) * 2021-02-26 2024-09-11 信越半導体株式会社 窒化物半導体基板およびその製造方法
JPWO2022191079A1 (enExample) * 2021-03-10 2022-09-15
US20250323037A1 (en) * 2021-06-08 2025-10-16 Shin-Etsu Handotai Co., Ltd. Nitride semiconductor substrate and method for producing same
JP7643250B2 (ja) * 2021-08-10 2025-03-11 信越半導体株式会社 窒化物半導体基板及びその製造方法
US20240387170A1 (en) * 2021-09-21 2024-11-21 Shin-Etsu Handotai Co., Ltd. Nitride semiconductor substrate and method for manufacturing same
WO2023063278A1 (ja) * 2021-10-15 2023-04-20 信越半導体株式会社 窒化物半導体基板及びその製造方法
JP7533793B2 (ja) * 2021-10-15 2024-08-14 信越半導体株式会社 窒化物半導体基板及びその製造方法
JP7755451B2 (ja) 2021-10-27 2025-10-16 信越化学工業株式会社 エピタキシャル成長用種基板およびその製造方法、ならびに半導体基板およびその製造方法
EP4455375A1 (en) 2021-12-21 2024-10-30 Shin-Etsu Handotai Co., Ltd. Nitride semiconductor substrate and method for manufacturing nitride semiconductor substrate
JP7657530B2 (ja) * 2021-12-28 2025-04-07 信越化学工業株式会社 高特性エピタキシャル成長用基板とその製造方法
JP7675679B2 (ja) 2022-03-18 2025-05-13 信越化学工業株式会社 高特性エピ用種基板、高特性エピ用種基板の製造方法、半導体基板、および半導体基板の製造方法
JP7768842B2 (ja) 2022-06-03 2025-11-12 信越化学工業株式会社 Ｉｉｉ族窒化物単結晶基板の製造方法
JP7609154B2 (ja) * 2022-11-11 2025-01-07 信越半導体株式会社 高周波デバイス用基板およびその製造方法
CN116230643A (zh) * 2023-03-09 2023-06-06 东科半导体(安徽)股份有限公司 GaN器件用陶瓷基板及其制备方法和GaN器件及其制备方法
JP2025007662A (ja) 2023-07-03 2025-01-17 信越半導体株式会社 ＧａＮエピタキシャル膜の製造方法及び半導体デバイスの製造方法

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US20120052635A1 (en) * 2010-08-30 2012-03-01 Pil-Kyu Kang Conductive layer buried-type substrate, method of forming the conductive layer buried-type substrate, and method of fabricating semiconductor device using the conductive layer buried-type substrate
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See also references of WO2017218536A1 *

Also Published As

Publication number Publication date
EP3469119A1 (en) 2019-04-17
CN114256068A (zh) 2022-03-29
JP2022058405A (ja) 2022-04-12
JP7416556B2 (ja) 2024-01-17
TW202322418A (zh) 2023-06-01
SG11201810919UA (en) 2019-01-30
JP2023182643A (ja) 2023-12-26
JP7001660B2 (ja) 2022-01-19
JP6626607B2 (ja) 2019-12-25
JP2020074399A (ja) 2020-05-14
KR20190019122A (ko) 2019-02-26
CN109844184B (zh) 2021-11-30
CN114256068B (zh) 2025-08-01
TWI793755B (zh) 2023-02-21
KR102361057B1 (ko) 2022-02-08
CN109844184A (zh) 2019-06-04
TWI839076B (zh) 2024-04-11
WO2017218536A1 (en) 2017-12-21
TW202429726A (zh) 2024-07-16
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