CN109844184B - 用于功率应用和射频应用的工程化衬底结构 - Google Patents

用于功率应用和射频应用的工程化衬底结构 Download PDF

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CN109844184B
CN109844184B CN201780049691.6A CN201780049691A CN109844184B CN 109844184 B CN109844184 B CN 109844184B CN 201780049691 A CN201780049691 A CN 201780049691A CN 109844184 B CN109844184 B CN 109844184B
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layer
shell
single crystal
substrate
epitaxial
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CN109844184A (zh
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弗拉基米尔·奥德诺博柳多夫
杰姆·巴斯切里
莎丽·法伦斯
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Qromis Inc
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CN201780049691.6A 2016-06-14 2017-06-13 用于功率应用和射频应用的工程化衬底结构 Active CN109844184B (zh)

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US201662350084P 2016-06-14 2016-06-14
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PCT/US2017/037252 WO2017218536A1 (en) 2016-06-14 2017-06-13 Engineered substrate structure for power and rf applications

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CN114256068B (zh) * 2016-06-14 2025-08-01 克罗米斯有限公司 用于功率应用和射频应用的工程化衬底结构
US10297445B2 (en) 2016-06-14 2019-05-21 QROMIS, Inc. Engineered substrate structure for power and RF applications
US10622468B2 (en) * 2017-02-21 2020-04-14 QROMIS, Inc. RF device integrated on an engineered substrate
US10734303B2 (en) * 2017-11-06 2020-08-04 QROMIS, Inc. Power and RF devices implemented using an engineered substrate structure
US10586844B2 (en) * 2018-01-23 2020-03-10 Texas Instruments Incorporated Integrated trench capacitor formed in an epitaxial layer
TWI692869B (zh) * 2019-05-03 2020-05-01 世界先進積體電路股份有限公司 基底及其製造方法
CN111987140B (zh) * 2019-05-21 2025-03-18 世界先进积体电路股份有限公司 基底及其制造方法
JP7319227B2 (ja) 2020-05-11 2023-08-01 信越化学工業株式会社 Ｉｉｉ－ｖ族化合物結晶用ベース基板及びその製造方法
CN115698391A (zh) 2020-06-09 2023-02-03 信越化学工业株式会社 Iii族氮化物系外延生长用基板及其制造方法
JP7618401B2 (ja) 2020-07-01 2025-01-21 信越化学工業株式会社 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法
KR102446604B1 (ko) 2021-01-04 2022-09-26 한국과학기술원 스트레인드 채널 성장 구조, 및 그를 이용한 스트레인드 채널 및 소자 제조 방법
KR20230137921A (ko) 2021-02-05 2023-10-05 신에쯔 한도타이 가부시키가이샤 질화물 반도체기판 및 그의 제조방법
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