CN102044473A - 半导体器件的形成方法 - Google Patents
半导体器件的形成方法 Download PDFInfo
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- CN102044473A CN102044473A CN 200910197080 CN200910197080A CN102044473A CN 102044473 A CN102044473 A CN 102044473A CN 200910197080 CN200910197080 CN 200910197080 CN 200910197080 A CN200910197080 A CN 200910197080A CN 102044473 A CN102044473 A CN 102044473A
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CN 200910197080 CN102044473B (zh) | 2009-10-13 | 2009-10-13 | 半导体器件的形成方法 |
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CN 200910197080 CN102044473B (zh) | 2009-10-13 | 2009-10-13 | 半导体器件的形成方法 |
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CN102044473A true CN102044473A (zh) | 2011-05-04 |
CN102044473B CN102044473B (zh) | 2013-03-06 |
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CN 200910197080 Expired - Fee Related CN102044473B (zh) | 2009-10-13 | 2009-10-13 | 半导体器件的形成方法 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102364672A (zh) * | 2011-11-10 | 2012-02-29 | 上海华力微电子有限公司 | 一种改善铜阻挡层与铜金属层的粘结性能的方法 |
CN103107158A (zh) * | 2011-11-11 | 2013-05-15 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
CN103187359A (zh) * | 2011-12-29 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | 金属互连线的形成方法 |
CN104465491A (zh) * | 2013-09-23 | 2015-03-25 | 中芯国际集成电路制造(上海)有限公司 | 金属互连层的形成方法 |
CN108074861A (zh) * | 2016-11-11 | 2018-05-25 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其制造方法 |
CN109844184A (zh) * | 2016-06-14 | 2019-06-04 | 克罗米斯有限公司 | 用于功率应用和射频应用的工程化衬底结构 |
US11011373B2 (en) | 2016-06-14 | 2021-05-18 | QROMIS, Inc. | Engineered substrate structures for power and RF applications |
US12009205B2 (en) | 2022-06-08 | 2024-06-11 | QROMIS, Inc. | Engineered substrate structures for power and RF applications |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040124420A1 (en) * | 2002-12-31 | 2004-07-01 | Lin Simon S.H. | Etch stop layer |
KR100655774B1 (ko) * | 2004-10-14 | 2006-12-11 | 삼성전자주식회사 | 식각 저지 구조물, 이의 제조 방법, 이를 포함하는 반도체장치 및 그 제조 방법 |
CN101192533B (zh) * | 2006-11-28 | 2010-06-16 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法、蚀刻阻挡层的形成方法 |
CN100483676C (zh) * | 2006-12-04 | 2009-04-29 | 中芯国际集成电路制造(上海)有限公司 | 金属布线结构的制作方法 |
KR101004691B1 (ko) * | 2007-09-12 | 2011-01-04 | 주식회사 하이닉스반도체 | 반도체 소자의 미세패턴 형성방법 |
-
2009
- 2009-10-13 CN CN 200910197080 patent/CN102044473B/zh not_active Expired - Fee Related
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102364672A (zh) * | 2011-11-10 | 2012-02-29 | 上海华力微电子有限公司 | 一种改善铜阻挡层与铜金属层的粘结性能的方法 |
CN103107158A (zh) * | 2011-11-11 | 2013-05-15 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
CN103187359A (zh) * | 2011-12-29 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | 金属互连线的形成方法 |
CN103187359B (zh) * | 2011-12-29 | 2015-07-08 | 中芯国际集成电路制造(上海)有限公司 | 金属互连线的形成方法 |
CN104465491A (zh) * | 2013-09-23 | 2015-03-25 | 中芯国际集成电路制造(上海)有限公司 | 金属互连层的形成方法 |
CN104465491B (zh) * | 2013-09-23 | 2018-01-12 | 中芯国际集成电路制造(上海)有限公司 | 金属互连层的形成方法 |
US11011373B2 (en) | 2016-06-14 | 2021-05-18 | QROMIS, Inc. | Engineered substrate structures for power and RF applications |
CN109844184A (zh) * | 2016-06-14 | 2019-06-04 | 克罗米斯有限公司 | 用于功率应用和射频应用的工程化衬底结构 |
CN109844184B (zh) * | 2016-06-14 | 2021-11-30 | 克罗米斯有限公司 | 用于功率应用和射频应用的工程化衬底结构 |
US11387101B2 (en) | 2016-06-14 | 2022-07-12 | QROMIS, Inc. | Methods of manufacturing engineered substrate structures for power and RF applications |
CN108074861B (zh) * | 2016-11-11 | 2020-07-10 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其制造方法 |
CN108074861A (zh) * | 2016-11-11 | 2018-05-25 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其制造方法 |
US12009205B2 (en) | 2022-06-08 | 2024-06-11 | QROMIS, Inc. | Engineered substrate structures for power and RF applications |
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Publication number | Publication date |
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CN102044473B (zh) | 2013-03-06 |
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