TWI793755B - 用於功率及rf應用的工程基板結構 - Google Patents

用於功率及rf應用的工程基板結構 Download PDF

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TWI793755B
TWI793755B TW110133509A TW110133509A TWI793755B TW I793755 B TWI793755 B TW I793755B TW 110133509 A TW110133509 A TW 110133509A TW 110133509 A TW110133509 A TW 110133509A TW I793755 B TWI793755 B TW I793755B
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layer
epitaxial
silicon
layers
adhesive layer
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TW202203473A (zh
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弗拉基米爾 歐迪諾布魯朵夫
山姆 巴斯賽利
薛瑞 法倫斯
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美商克若密斯股份有限公司
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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TW110133509A 2016-06-14 2017-06-13 用於功率及rf應用的工程基板結構 TWI793755B (zh)

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US201662350084P 2016-06-14 2016-06-14
US201662350077P 2016-06-14 2016-06-14
US62/350,084 2016-06-14
US62/350,077 2016-06-14

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TWI793755B true TWI793755B (zh) 2023-02-21

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TW112101490A TWI839076B (zh) 2016-06-14 2017-06-13 用於功率及rf應用的工程基板結構
TW106119602A TWI743136B (zh) 2016-06-14 2017-06-13 用於功率及rf應用的工程基板結構
TW113110045A TWI894863B (zh) 2016-06-14 2017-06-13 用於功率及rf應用的工程基板結構

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TW113110045A TWI894863B (zh) 2016-06-14 2017-06-13 用於功率及rf應用的工程基板結構

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JP (5) JP6626607B2 (enExample)
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US10297445B2 (en) 2016-06-14 2019-05-21 QROMIS, Inc. Engineered substrate structure for power and RF applications
US10622468B2 (en) * 2017-02-21 2020-04-14 QROMIS, Inc. RF device integrated on an engineered substrate
US10734303B2 (en) * 2017-11-06 2020-08-04 QROMIS, Inc. Power and RF devices implemented using an engineered substrate structure
US10586844B2 (en) * 2018-01-23 2020-03-10 Texas Instruments Incorporated Integrated trench capacitor formed in an epitaxial layer
TWI692869B (zh) * 2019-05-03 2020-05-01 世界先進積體電路股份有限公司 基底及其製造方法
CN111987140B (zh) * 2019-05-21 2025-03-18 世界先进积体电路股份有限公司 基底及其制造方法
JP7319227B2 (ja) 2020-05-11 2023-08-01 信越化学工業株式会社 Ｉｉｉ－ｖ族化合物結晶用ベース基板及びその製造方法
CN115698391A (zh) 2020-06-09 2023-02-03 信越化学工业株式会社 Iii族氮化物系外延生长用基板及其制造方法
JP7618401B2 (ja) 2020-07-01 2025-01-21 信越化学工業株式会社 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法
KR102446604B1 (ko) 2021-01-04 2022-09-26 한국과학기술원 스트레인드 채널 성장 구조, 및 그를 이용한 스트레인드 채널 및 소자 제조 방법
KR20230137921A (ko) 2021-02-05 2023-10-05 신에쯔 한도타이 가부시키가이샤 질화물 반도체기판 및 그의 제조방법
JP7549549B2 (ja) * 2021-02-26 2024-09-11 信越半導体株式会社 窒化物半導体基板およびその製造方法
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