TWI829715B - 顯示面板以及使用其的大型顯示裝置 - Google Patents

顯示面板以及使用其的大型顯示裝置 Download PDF

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Publication number
TWI829715B
TWI829715B TW108123469A TW108123469A TWI829715B TW I829715 B TWI829715 B TW I829715B TW 108123469 A TW108123469 A TW 108123469A TW 108123469 A TW108123469 A TW 108123469A TW I829715 B TWI829715 B TW I829715B
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TW
Taiwan
Prior art keywords
thin film
film transistor
glass substrate
display panel
transistor substrate
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TW108123469A
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English (en)
Chinese (zh)
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TW202006448A (zh
Inventor
張景雲
朴元淳
孫東溟
申相旻
李昶準
丁英基
趙誠必
許均
洪淳珉
Original Assignee
南韓商三星電子股份有限公司
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Publication of TW202006448A publication Critical patent/TW202006448A/zh
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Publication of TWI829715B publication Critical patent/TWI829715B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
TW108123469A 2018-07-04 2019-07-03 顯示面板以及使用其的大型顯示裝置 TWI829715B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2018-0077668 2018-07-04
KR20180077668 2018-07-04
KR1020190075904A KR102151099B1 (ko) 2018-07-04 2019-06-25 디스플레이 패널 및 이를 이용한 대형 디스플레이 장치
KR10-2019-0075904 2019-06-25

Publications (2)

Publication Number Publication Date
TW202006448A TW202006448A (zh) 2020-02-01
TWI829715B true TWI829715B (zh) 2024-01-21

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TW108123469A TWI829715B (zh) 2018-07-04 2019-07-03 顯示面板以及使用其的大型顯示裝置

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Country Link
EP (1) EP3782191A4 (ko)
KR (1) KR102151099B1 (ko)
CN (1) CN112335045A (ko)
TW (1) TWI829715B (ko)

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KR20210111529A (ko) * 2020-03-03 2021-09-13 삼성전자주식회사 측면 배선이 형성된 글라스 기판을 구비한 디스플레이 모듈 및 디스플레이 모듈 제조 방법
TWI804720B (zh) * 2020-03-27 2023-06-11 南韓商太特思股份有限公司 Ｌｅｄ顯示模組及其顯示器
US20230207739A1 (en) * 2020-04-13 2023-06-29 Lg Electronics Inc. Display device and method for manufacturing same, and multi-screen display device using same
KR102542344B1 (ko) * 2020-05-08 2023-06-13 삼성전자주식회사 측면 배선이 형성된 글라스 기판을 구비한 디스플레이 모듈 및 그 제조 방법
EP4068373A4 (en) * 2020-05-08 2023-06-07 Samsung Electronics Co., Ltd. DISPLAY MODULE COMPRISING A GLASS SUBSTRATE ENCLOSING SIDE WIRING, AND METHOD OF MANUFACTURING THEREOF
TWI742681B (zh) * 2020-05-21 2021-10-11 友達光電股份有限公司 顯示裝置
CN111951697B (zh) 2020-08-10 2022-02-01 Tcl华星光电技术有限公司 拼接显示屏
TWI737520B (zh) * 2020-08-14 2021-08-21 友達光電股份有限公司 顯示面板
CN113644085B (zh) * 2020-08-14 2023-06-02 友达光电股份有限公司 电子装置及电子装置的制造方法
KR20220039448A (ko) * 2020-09-22 2022-03-29 삼성전자주식회사 측면 배선을 구비한 디스플레이 모듈 및 그 제조 방법
KR20220054034A (ko) * 2020-10-23 2022-05-02 삼성전자주식회사 디스플레이 모듈 및 그 제조 방법
KR102328078B1 (ko) 2021-04-13 2021-11-18 주식회사 에이맵플러스 디스플레이 패널, 디스플레이 장치 및 그 제조방법
TWI832687B (zh) * 2023-01-30 2024-02-11 友達光電股份有限公司 側面電路結構及其製造方法

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US20180173036A1 (en) * 2016-12-20 2018-06-21 Lg Display Co., Ltd. Display device and multiscreen display device including the same

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JP2015175969A (ja) * 2014-03-14 2015-10-05 日本放送協会 タイル型ディスプレイ及びその作製方法
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Also Published As

Publication number Publication date
EP3782191A1 (en) 2021-02-24
TW202006448A (zh) 2020-02-01
KR102151099B1 (ko) 2020-09-02
CN112335045A (zh) 2021-02-05
KR20200004751A (ko) 2020-01-14
EP3782191A4 (en) 2021-06-16

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