TWI775142B - 基板處理裝置,半導體裝置的製造方法及程式 - Google Patents
基板處理裝置,半導體裝置的製造方法及程式 Download PDFInfo
- Publication number
- TWI775142B TWI775142B TW109130887A TW109130887A TWI775142B TW I775142 B TWI775142 B TW I775142B TW 109130887 A TW109130887 A TW 109130887A TW 109130887 A TW109130887 A TW 109130887A TW I775142 B TWI775142 B TW I775142B
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- semiconductor device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Automation & Control Theory (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019-198080 | 2019-10-31 | ||
JP2019198080 | 2019-10-31 | ||
JP2020-145475 | 2020-08-31 | ||
JP2020145475A JP7170692B2 (ja) | 2019-10-31 | 2020-08-31 | 基板処理装置、半導体装置の製造方法及びプログラム |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202135131A TW202135131A (zh) | 2021-09-16 |
TWI775142B true TWI775142B (zh) | 2022-08-21 |
Family
ID=75898311
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109130887A TWI775142B (zh) | 2019-10-31 | 2020-09-09 | 基板處理裝置,半導體裝置的製造方法及程式 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7170692B2 (ko) |
KR (1) | KR102448794B1 (ko) |
SG (1) | SG10202009600UA (ko) |
TW (1) | TWI775142B (ko) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010020516A1 (en) * | 1999-09-24 | 2001-09-13 | Applied Materials, Inc. | Apparatus for performing self cleaning method of forming deep trenches in silicon substrates |
JP2015106575A (ja) * | 2013-11-28 | 2015-06-08 | 株式会社日立国際電気 | 基板処理装置、基板処理装置の制御方法、制御プログラム及び半導体装置の製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000195805A (ja) | 1998-12-25 | 2000-07-14 | Matsushita Electric Ind Co Ltd | 電子デバイス製造装置、及びそのメンテナンス制御方法 |
JP2004193396A (ja) | 2002-12-12 | 2004-07-08 | Hitachi Kokusai Electric Inc | 半導体デバイスの製造方法 |
JP2007146252A (ja) * | 2005-11-29 | 2007-06-14 | Tokyo Electron Ltd | 熱処理方法、熱処理装置及び記憶媒体 |
JP2009249680A (ja) | 2008-04-04 | 2009-10-29 | Seiko Epson Corp | 成膜方法及び成膜装置 |
JP6159536B2 (ja) | 2012-03-05 | 2017-07-05 | 株式会社日立国際電気 | 基板処理装置、基板処理装置の保守方法及び移載方法並びにプログラム |
US10131992B2 (en) | 2012-03-30 | 2018-11-20 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, method of controlling substrate processing apparatus, method of maintaining substrate processing apparatus, and recording medium |
JP2015162628A (ja) | 2014-02-28 | 2015-09-07 | 三菱樹脂株式会社 | 太陽電池用封止シート及び太陽電池モジュール |
JP6523119B2 (ja) * | 2015-09-28 | 2019-05-29 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
CN108885968B (zh) | 2016-04-08 | 2023-12-01 | 株式会社国际电气 | 衬底处理装置、半导体器件的制造方法及程序 |
JP6804029B2 (ja) | 2017-12-21 | 2020-12-23 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
-
2020
- 2020-08-31 JP JP2020145475A patent/JP7170692B2/ja active Active
- 2020-09-09 TW TW109130887A patent/TWI775142B/zh active
- 2020-09-25 KR KR1020200124597A patent/KR102448794B1/ko active IP Right Grant
- 2020-09-28 SG SG10202009600UA patent/SG10202009600UA/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010020516A1 (en) * | 1999-09-24 | 2001-09-13 | Applied Materials, Inc. | Apparatus for performing self cleaning method of forming deep trenches in silicon substrates |
US20010051439A1 (en) * | 1999-09-24 | 2001-12-13 | Applied Materials, Inc. | Self cleaning method of forming deep trenches in silicon substrates |
JP2015106575A (ja) * | 2013-11-28 | 2015-06-08 | 株式会社日立国際電気 | 基板処理装置、基板処理装置の制御方法、制御プログラム及び半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW202135131A (zh) | 2021-09-16 |
KR102448794B1 (ko) | 2022-09-28 |
JP2021077862A (ja) | 2021-05-20 |
KR20210052222A (ko) | 2021-05-10 |
SG10202009600UA (en) | 2021-05-28 |
JP7170692B2 (ja) | 2022-11-14 |
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