SG10202009600UA - Method of manufacturing semiconductor device, program and substrate processing apparatus - Google Patents

Method of manufacturing semiconductor device, program and substrate processing apparatus

Info

Publication number
SG10202009600UA
SG10202009600UA SG10202009600UA SG10202009600UA SG10202009600UA SG 10202009600U A SG10202009600U A SG 10202009600UA SG 10202009600U A SG10202009600U A SG 10202009600UA SG 10202009600U A SG10202009600U A SG 10202009600UA SG 10202009600U A SG10202009600U A SG 10202009600UA
Authority
SG
Singapore
Prior art keywords
program
semiconductor device
processing apparatus
substrate processing
manufacturing semiconductor
Prior art date
Application number
SG10202009600UA
Other languages
English (en)
Inventor
Morita Osamu
Kubo Shuichi
Yamaoka Yuji
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Publication of SG10202009600UA publication Critical patent/SG10202009600UA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Automation & Control Theory (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
SG10202009600UA 2019-10-31 2020-09-28 Method of manufacturing semiconductor device, program and substrate processing apparatus SG10202009600UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019198080 2019-10-31
JP2020145475A JP7170692B2 (ja) 2019-10-31 2020-08-31 基板処理装置、半導体装置の製造方法及びプログラム

Publications (1)

Publication Number Publication Date
SG10202009600UA true SG10202009600UA (en) 2021-05-28

Family

ID=75898311

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202009600UA SG10202009600UA (en) 2019-10-31 2020-09-28 Method of manufacturing semiconductor device, program and substrate processing apparatus

Country Status (4)

Country Link
JP (1) JP7170692B2 (ko)
KR (1) KR102448794B1 (ko)
SG (1) SG10202009600UA (ko)
TW (1) TWI775142B (ko)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000195805A (ja) 1998-12-25 2000-07-14 Matsushita Electric Ind Co Ltd 電子デバイス製造装置、及びそのメンテナンス制御方法
US6318384B1 (en) * 1999-09-24 2001-11-20 Applied Materials, Inc. Self cleaning method of forming deep trenches in silicon substrates
JP2004193396A (ja) 2002-12-12 2004-07-08 Hitachi Kokusai Electric Inc 半導体デバイスの製造方法
JP2007146252A (ja) * 2005-11-29 2007-06-14 Tokyo Electron Ltd 熱処理方法、熱処理装置及び記憶媒体
JP2009249680A (ja) 2008-04-04 2009-10-29 Seiko Epson Corp 成膜方法及び成膜装置
JP6159536B2 (ja) 2012-03-05 2017-07-05 株式会社日立国際電気 基板処理装置、基板処理装置の保守方法及び移載方法並びにプログラム
US10131992B2 (en) 2012-03-30 2018-11-20 Hitachi Kokusai Electric Inc. Substrate processing apparatus, method of controlling substrate processing apparatus, method of maintaining substrate processing apparatus, and recording medium
JP2015106575A (ja) 2013-11-28 2015-06-08 株式会社日立国際電気 基板処理装置、基板処理装置の制御方法、制御プログラム及び半導体装置の製造方法
JP2015162628A (ja) 2014-02-28 2015-09-07 三菱樹脂株式会社 太陽電池用封止シート及び太陽電池モジュール
JP6523119B2 (ja) * 2015-09-28 2019-05-29 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
CN108885968B (zh) 2016-04-08 2023-12-01 株式会社国际电气 衬底处理装置、半导体器件的制造方法及程序
JP6804029B2 (ja) 2017-12-21 2020-12-23 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム

Also Published As

Publication number Publication date
TW202135131A (zh) 2021-09-16
KR102448794B1 (ko) 2022-09-28
JP2021077862A (ja) 2021-05-20
KR20210052222A (ko) 2021-05-10
TWI775142B (zh) 2022-08-21
JP7170692B2 (ja) 2022-11-14

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