TWI749058B - 光學半導體元件覆蓋用薄片 - Google Patents

光學半導體元件覆蓋用薄片 Download PDF

Info

Publication number
TWI749058B
TWI749058B TW106130084A TW106130084A TWI749058B TW I749058 B TWI749058 B TW I749058B TW 106130084 A TW106130084 A TW 106130084A TW 106130084 A TW106130084 A TW 106130084A TW I749058 B TWI749058 B TW I749058B
Authority
TW
Taiwan
Prior art keywords
layer
light diffusion
optical semiconductor
diffusion layer
semiconductor element
Prior art date
Application number
TW106130084A
Other languages
English (en)
Chinese (zh)
Other versions
TW201820653A (zh
Inventor
三谷宗久
松田広和
鈴木一聡
Original Assignee
晶元光電股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 晶元光電股份有限公司 filed Critical 晶元光電股份有限公司
Publication of TW201820653A publication Critical patent/TW201820653A/zh
Application granted granted Critical
Publication of TWI749058B publication Critical patent/TWI749058B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
    • G02B5/0236—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element
    • G02B5/0242—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element by means of dispersed particles
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V3/00—Globes; Bowls; Cover glasses
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V3/00—Globes; Bowls; Cover glasses
    • F21V3/04—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0268—Diffusing elements; Afocal elements characterized by the fabrication or manufacturing method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Led Device Packages (AREA)
  • Laminated Bodies (AREA)
  • Optical Elements Other Than Lenses (AREA)
TW106130084A 2016-09-08 2017-09-04 光學半導體元件覆蓋用薄片 TWI749058B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP??2016-175379 2016-09-08
JP2016175379A JP6902838B2 (ja) 2016-09-08 2016-09-08 光半導体素子被覆用シート

Publications (2)

Publication Number Publication Date
TW201820653A TW201820653A (zh) 2018-06-01
TWI749058B true TWI749058B (zh) 2021-12-11

Family

ID=61561484

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106130084A TWI749058B (zh) 2016-09-08 2017-09-04 光學半導體元件覆蓋用薄片

Country Status (6)

Country Link
US (1) US11269118B2 (fr)
EP (1) EP3511612B1 (fr)
JP (1) JP6902838B2 (fr)
CN (1) CN109690181B (fr)
TW (1) TWI749058B (fr)
WO (1) WO2018047658A1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108922954A (zh) * 2018-06-25 2018-11-30 江苏罗化新材料有限公司 一种双层膜cspled制作方法
TWI751394B (zh) * 2018-12-20 2022-01-01 健策精密工業股份有限公司 預成型載板及其製造方法
CN112563396B (zh) * 2019-09-25 2022-04-22 天津德高化成新材料股份有限公司 一种用于潮气敏感的高色域背光应用的芯片级封装结构及制造方法
JP2021071646A (ja) 2019-10-31 2021-05-06 株式会社きもと 光拡散フィルム
CN112462554B (zh) * 2020-07-16 2024-05-17 江西晶亮光电科技协同创新有限公司 新型发光装置及其制备方法、背光模组
TWI759049B (zh) * 2020-12-31 2022-03-21 李宛儒 一種可降低出光面溫度的晶片級封裝之發光晶片結構的製備方法
JP2022169991A (ja) 2021-04-28 2022-11-10 株式会社きもと 成型拡散積層フィルム
JP7369760B2 (ja) * 2021-12-24 2023-10-26 日東電工株式会社 光半導体素子封止用シート
JP7369761B2 (ja) * 2021-12-24 2023-10-26 日東電工株式会社 光半導体素子封止用シート
CN117133851A (zh) * 2023-10-26 2023-11-28 罗化芯显示科技开发(江苏)有限公司 一种led封装膜片及led封装结构

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010271517A (ja) * 2009-05-21 2010-12-02 Oji Paper Co Ltd 輝度均斉化シートおよび面光源装置
US20130063939A1 (en) * 2011-09-14 2013-03-14 Nitto Denko Corporation Encapsulating sheet, producing method thereof, light emitting diode device, and producing method thereof

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005104247A1 (fr) * 2004-04-19 2005-11-03 Matsushita Electric Industrial Co., Ltd. Procédé de fabrication d'une source lumineuse d'éclairement de diodes électroluminescentes et source lumineuse d'éclairement de diodes électroluminescentes
JP2006140362A (ja) 2004-11-15 2006-06-01 Nitto Denko Corp 光半導体素子封止用シートおよび該シートを用いた光半導体装置の製造方法
US8080828B2 (en) 2006-06-09 2011-12-20 Philips Lumileds Lighting Company, Llc Low profile side emitting LED with window layer and phosphor layer
JP4969948B2 (ja) 2006-08-18 2012-07-04 北越紀州製紙株式会社 照明調整具用シート及びそのシートを用いた照明調整具
US7652301B2 (en) * 2007-08-16 2010-01-26 Philips Lumileds Lighting Company, Llc Optical element coupled to low profile side emitting LED
KR101608340B1 (ko) 2007-12-11 2016-04-04 코닌클리케 필립스 엔.브이. 하이브리드 상부 반사기를 갖는 측면 발광 장치
JP2012504860A (ja) * 2008-10-01 2012-02-23 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 光抽出の増加及び非黄色のオフ状態色のための封止材における粒子を含むｌｅｄ
JP2010168525A (ja) * 2008-12-24 2010-08-05 Hitachi Chem Co Ltd 透明フィルム、この透明フィルムを用いた積層フィルム、無機粒子挟持フィルム、及び、ディスプレイ用パネル
WO2010106999A1 (fr) 2009-03-17 2010-09-23 積水化学工業株式会社 Matériau de base de bande pour assembler un dispositif d'affichage et feuille adhésive pour assembler un dispositif d'affichage et unité de module d'affichage l'utilisant
JP5376230B2 (ja) 2009-06-30 2013-12-25 平岡織染株式会社 背面映写可能な産業資材シートの製造方法
US8110839B2 (en) * 2009-07-13 2012-02-07 Luxingtek, Ltd. Lighting device, display, and method for manufacturing the same
CN102116959B (zh) * 2009-12-31 2013-08-14 北京京东方光电科技有限公司 液晶显示器的光学元件及其制作方法
JP5278526B2 (ja) * 2011-12-19 2013-09-04 大日本印刷株式会社 面光源装置、透過型表示装置
JP5953797B2 (ja) * 2012-02-17 2016-07-20 東レ株式会社 半導体発光装置の製造方法
JP2013232479A (ja) * 2012-04-27 2013-11-14 Toshiba Corp 半導体発光装置
US9214362B2 (en) 2012-07-17 2015-12-15 Nitto Denko Corporation Producing method of encapsulating layer-covered semiconductor element and producing method of semiconductor device
JP2014038757A (ja) * 2012-08-15 2014-02-27 Mitsubishi Chemicals Corp 大型有機電界発光装置
US9093618B2 (en) * 2012-08-24 2015-07-28 Tsmc Solid State Lighting Ltd. Method and apparatus for fabricating phosphor-coated LED dies
JP2014157989A (ja) 2013-02-18 2014-08-28 Toshiba Corp 半導体発光装置及びその製造方法
KR20150025231A (ko) * 2013-08-28 2015-03-10 서울반도체 주식회사 광원 모듈 및 그 제조 방법, 및 백라이트 유닛
JP2016048764A (ja) * 2014-08-28 2016-04-07 日東電工株式会社 光半導体素子封止組成物、光半導体素子封止成形体、光半導体素子封止シート、光半導体装置および封止光半導体素子
CN105518882A (zh) 2013-09-06 2016-04-20 日东电工株式会社 光半导体元件封装组合物、光半导体元件封装成型体、光半导体元件封装片、光半导体装置及封装光半导体元件
DE102014106074A1 (de) 2014-04-30 2015-11-19 Osram Opto Semiconductors Gmbh Leuchtvorrichtung und Verfahren zum Herstellen einer Leuchtvorrichtung
JP5996037B2 (ja) 2015-05-12 2016-09-21 シチズン電子株式会社 Ｌｅｄ発光装置
CN110083005A (zh) * 2018-01-23 2019-08-02 台湾扬昕股份有限公司 背投屏幕

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010271517A (ja) * 2009-05-21 2010-12-02 Oji Paper Co Ltd 輝度均斉化シートおよび面光源装置
US20130063939A1 (en) * 2011-09-14 2013-03-14 Nitto Denko Corporation Encapsulating sheet, producing method thereof, light emitting diode device, and producing method thereof

Also Published As

Publication number Publication date
EP3511612A4 (fr) 2020-04-01
CN109690181A (zh) 2019-04-26
US20200116905A1 (en) 2020-04-16
JP2018041638A (ja) 2018-03-15
EP3511612B1 (fr) 2024-01-10
JP6902838B2 (ja) 2021-07-14
CN109690181B (zh) 2022-07-19
WO2018047658A1 (fr) 2018-03-15
US11269118B2 (en) 2022-03-08
EP3511612A1 (fr) 2019-07-17
TW201820653A (zh) 2018-06-01

Similar Documents

Publication Publication Date Title
TWI749058B (zh) 光學半導體元件覆蓋用薄片
JP5840377B2 (ja) 反射樹脂シートおよび発光ダイオード装置の製造方法
JP5670249B2 (ja) 発光素子転写シートの製造方法、発光装置の製造方法、発光素子転写シートおよび発光装置
JP5744386B2 (ja) 光半導体封止材
TWI695054B (zh) 螢光體陶瓷、密封光半導體元件、電路基板、光半導體裝置及發光裝置
KR20120117661A (ko) 반사 수지 시트, 발광 다이오드 장치 및 그 제조 방법
WO2017221606A1 (fr) Élément semi-conducteur optique ayant une couche de phosphore, et procédé de fabrication d'un élément semi-conducteur optique
JP2018041860A (ja) 波長変換シート、シート被覆素子および光半導体装置
JP5972571B2 (ja) 光半導体装置および照明装置
JP2018014480A (ja) 反射層および蛍光体層付光半導体素子
JP2016027668A (ja) 発光ダイオード装置の製造方法
TWM537717U (zh) 被覆有螢光體層之光半導體元件
WO2018008197A1 (fr) Élément photo-semi-conducteur doté d'une couche de réflexion et d'une couche de phosphore
WO2017221608A1 (fr) Feuille de couche de phosphore et procédé de fabrication d'un élément de semi-conducteur optique avec une couche de phosphore
KR20130100718A (ko) 발광 장치, 조명 장치, 발광 장치 집합체 및 발광 장치의 제조 방법
TWI824331B (zh) 光學半導體元件覆蓋用薄片
WO2017221607A1 (fr) Dispositif à semi-conducteur optique avec couche de phosphore
JP2018041858A (ja) 被覆シート、シート被覆素子および光半導体装置
JP2018041857A (ja) 蛍光体層光拡散層被覆光半導体素子
JP2018120947A (ja) 機能層−被覆層付光半導体素子の製造方法
JP6627838B2 (ja) 透光性シートの製造方法
JP2018166197A (ja) Ｌｅｄ装置、ｌｅｄ発光色変換用蛍光体含有シート及びｌｅｄ装置の製造方法
JP2018101659A (ja) 機能層−被覆層付光半導体素子の製造方法
JP2018006472A (ja) 反射層−蛍光体層被覆光半導体素子の製造方法