WO2018008197A1 - Élément photo-semi-conducteur doté d'une couche de réflexion et d'une couche de phosphore - Google Patents

Élément photo-semi-conducteur doté d'une couche de réflexion et d'une couche de phosphore Download PDF

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Publication number
WO2018008197A1
WO2018008197A1 PCT/JP2017/010725 JP2017010725W WO2018008197A1 WO 2018008197 A1 WO2018008197 A1 WO 2018008197A1 JP 2017010725 W JP2017010725 W JP 2017010725W WO 2018008197 A1 WO2018008197 A1 WO 2018008197A1
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Prior art keywords
optical semiconductor
semiconductor element
layer
phosphor layer
reflective layer
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PCT/JP2017/010725
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English (en)
Japanese (ja)
Inventor
誠 常
広和 松田
広希 河野
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日東電工株式会社
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Priority claimed from JP2017046042A external-priority patent/JP2018014480A/ja
Application filed by 日東電工株式会社 filed Critical 日東電工株式会社
Publication of WO2018008197A1 publication Critical patent/WO2018008197A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Definitions

  • the present invention relates to an optical semiconductor element with a reflective layer and a phosphor layer.
  • a white light emitting device (white light semiconductor device) is known as a light emitting device capable of emitting high energy light.
  • the white light emitting device includes, for example, a diode substrate that supplies power to the LED, an LED (light emitting diode) that is mounted thereon and emits blue light, and a phosphor layer that can convert blue light into yellow light and covers the LED And a sealing layer that seals the LED and a reflective layer that is provided around the LED and reflects light forward.
  • a white light emitting device has high energy by mixing color of blue light emitted from the LED and transmitted through the sealing layer and the phosphor layer, and yellow light in which part of the blue light is wavelength-converted in the phosphor layer. Of white light.
  • a phosphor layer formed so that the lower surface has the same shape as the upper surface of the light emitting diode element and the upper surface is wide is disposed on the upper surface (light emitting surface) of the light emitting diode element.
  • the reflective resin layer is disposed on the side surface of the light emitting diode element.
  • FIG. 7 (e) of JP2012-222315A is a diagrammatic representation of JP2012-222315A.
  • the light emitting device of Patent Document 1 in the phosphor layer, the upper surface of the light emitting diode element and the lower surface of the phosphor layer are formed in the same pattern. Therefore, when the phosphor layer is disposed on the upper surface of the light emitting diode element, if the position of the phosphor layer is shifted in the width direction, there is a portion where the phosphor layer is not disposed on the upper surface of the light emitting diode element. There arises a problem that desired optical characteristics cannot be exhibited. For this reason, the light emitting device of Patent Document 1 requires high positional accuracy in the width direction, and improvement thereof is desired.
  • An object of the present invention is to provide a reflection layer and an optical semiconductor element with a phosphor layer, which can manufacture an optical semiconductor device having good directivity and front illuminance and improved positional accuracy. .
  • the present invention [1] includes an optical semiconductor element having a light emitting surface and an opposing surface arranged to face the light emitting surface at an interval in the vertical direction, a phosphor layer covering at least the light emitting surface, and the light A reflection layer disposed on the outer side in the orthogonal direction perpendicular to the vertical direction with respect to both the semiconductor element and the phosphor layer, and the phosphor layer is an inner portion disposed on the upper side of the optical semiconductor element And a reflecting layer and a phosphor layer-attached optical semiconductor element having an outer portion disposed on or including a virtual surface extending outside the optical semiconductor element along the light emitting surface. Yes.
  • the reflective layer is arranged on the outer side in the orthogonal direction with respect to both the optical semiconductor element and the phosphor layer. For this reason, the light emitted or reflected from the side surfaces of the phosphor layer and the optical semiconductor element can be reflected upward. Therefore, directivity and front illuminance are good.
  • the phosphor layer has an outer portion disposed on a virtual surface extending outside the optical semiconductor element or an outer portion disposed so as to include the virtual surface. For this reason, the lower surface of the phosphor layer is wider than the light emitting surface of the optical semiconductor element. Therefore, when the phosphor layer is disposed on the light emitting surface of the light emitting diode element, even if the position of the phosphor layer is shifted in a direction orthogonal to the desired position, the outer portion of the phosphor layer is The light emitting surface can be reliably coated. As a result, the positional accuracy of the phosphor layer with respect to the optical semiconductor element is improved in the orthogonal direction.
  • the present invention [2] includes the optical semiconductor element with a reflective layer and a phosphor layer according to [1], which satisfies the following formulas (1) and (2).
  • A represents the vertical distance between the light emitting surface and the top surface of the phosphor layer.
  • Y represents the vertical distance between the light emitting surface and the inner edge of the upper edge of the reflective layer.
  • An attached optical semiconductor element is included.
  • Such an optical semiconductor element with a reflective layer and a phosphor layer has a better front illuminance.
  • the present invention [4] includes the optical semiconductor element with a reflective layer and a phosphor layer according to any one of the above [1] to [3], which satisfies the following formula (3).
  • B represents the distance between the edge of the facing surface of the optical semiconductor element and the inner edge of the lower edge of the reflective layer.
  • X represents the edge of the light emitting surface of the optical semiconductor element. And the distance in the orthogonal direction between the phosphor layer and the outer edge on the virtual plane.
  • the invention [5] is any one of the above [1] to [4], wherein the reflective layer is in contact with the entire side surface between the light emitting surface and the facing surface of the optical semiconductor element.
  • the optical semiconductor element with a reflecting layer and fluorescent substance layer of description is included.
  • Such an optical semiconductor element with a reflective layer and a phosphor layer has better directivity and front illuminance.
  • the present invention [6] is any one of the above [1] to [3], wherein the phosphor layer is in contact with the entire side surface between the light emitting surface and the facing surface of the optical semiconductor element. And an optical semiconductor element with a phosphor layer and a phosphor layer.
  • Such an optical semiconductor element with a reflective layer and a phosphor layer has good light extraction efficiency.
  • the invention [7] includes the reflective layer and the optical semiconductor element with a phosphor layer according to any one of the above [1] to [6], further comprising a diffusion layer disposed on the phosphor layer. Contains.
  • Such an optical semiconductor element with a reflective layer and a phosphor layer has better directivity and front illuminance.
  • the present invention [8] includes the optical semiconductor element with a reflective layer and a phosphor layer according to the above [7], which satisfies the following formula (4).
  • Such an optical semiconductor element with a reflective layer and a phosphor layer has a better front illuminance.
  • the optical semiconductor element with the reflective layer and the phosphor layer of the present invention it is possible to manufacture an optical semiconductor device having good directivity and front illuminance while improving the positional accuracy of the phosphor layer with respect to the optical semiconductor element. it can.
  • FIG. 1A to 1B show a first embodiment of an optical semiconductor element with a reflective layer and a phosphor layer according to the present invention
  • FIG. 1A is a plan view
  • FIG. 1B is a cross-sectional view taken along line AA in FIG. 1A.
  • . 2A to 2G are process diagrams of the manufacturing method of the optical semiconductor element with the reflective layer and the phosphor layer in FIG. 1.
  • FIG. 2A is a temporary fixing sheet preparation process
  • FIG. 2B is a temporary fixing process
  • FIG. 2D shows a phosphor layer removing process
  • FIG. 2E shows a reflective layer forming process
  • FIG. 2F shows a cutting process
  • FIG. 2G shows a mounting process.
  • FIG. 2A is a temporary fixing sheet preparation process
  • FIG. 2B is a temporary fixing process
  • FIG. 2D shows a phosphor layer removing process
  • FIG. 2E shows a reflective layer forming process
  • FIG. 2F shows a cutting process
  • FIG. 3 shows a modified example of the first embodiment, in which the upper surface of the phosphor layer is positioned below the upper end of the reflective layer.
  • FIG. 4 shows a modification of the first embodiment, in which the upper surface of the phosphor layer is positioned above the upper end of the reflective layer.
  • FIG. 5 is a modification of the first embodiment, and shows a mode in which a diffusion layer is provided on the upper surface of the phosphor layer.
  • 6A to 6B show a second embodiment of an optical semiconductor element with a reflective layer and a phosphor layer according to the present invention, FIG. 6A is a plan view, and FIG. 6B is a cross-sectional view taken along line BB of FIG. 6A. .
  • FIG. 7A to 7E are process diagrams of the method of manufacturing the optical semiconductor element with the reflective layer and the phosphor layer in FIG. 6, in which FIG. 7A is a fluorescent layer preparation process, FIG. 7B is an element arrangement process, and FIG. The fluorescent layer removing step, FIG. 7D shows the reflective layer forming step, and FIG. 7E shows the cutting step.
  • FIG. 8 shows a modification of the second embodiment, in which the side surface of the phosphor layer is formed so as to become wider toward the upper side.
  • FIG. 9 is a modified example of the second embodiment and shows a mode in which a diffusion layer is provided on the upper surface of the phosphor layer.
  • FIG. 10A to 10B show a third embodiment of the optical semiconductor element with a reflective layer and a phosphor layer according to the present invention
  • FIG. 10A is a plan view
  • FIG. 10B is a cross-sectional view taken along line AA in FIG. 10A.
  • . 11A to 11G are process diagrams of the method of manufacturing the optical semiconductor element with the reflective layer and the phosphor layer in FIG. 10.
  • FIG. 11A is a provisional fixing sheet preparation process
  • FIG. 11B is a provisional fixing process
  • FIG. 11D shows a phosphor layer removing process
  • FIG. 11E shows a reflective layer forming process (before the reflective layer is formed)
  • FIG. 11F shows a reflective layer forming process (after the reflective layer is formed)
  • FIG. The cutting process is shown.
  • FIG. 12 shows an optical semiconductor element with a reflective layer and a phosphor layer of a comparative example, in which a reflective layer is not provided on the side of the phosphor layer.
  • FIG. 13 shows an optical semiconductor element with a reflective layer and a phosphor layer of a comparative example, in which the phosphor layer does not include an outer portion extending outside the optical semiconductor element.
  • the vertical direction of the paper is the vertical direction (first direction, thickness direction)
  • the upper side of the paper is the upper side (one side in the first direction, the one side in the thickness direction)
  • the lower side of the paper is the lower side (the other side in the first direction).
  • the other side in the thickness direction The left-right direction on the paper surface is the left-right direction (second direction orthogonal to the first direction, an example of the orthogonal direction to the up-down direction)
  • the left side of the paper is the left side (second side in the second direction)
  • the right side of the paper is the right side (the other in the second direction).
  • the paper thickness direction is the front-rear direction (the third direction orthogonal to the first direction and the second direction, an example of the orthogonal direction to the vertical direction), the front side of the paper is the front side (one side in the third direction), and the back side of the paper is the rear side (The other side in the third direction). Specifically, it conforms to the direction arrow in each figure.
  • the element with two layers is not an optical semiconductor device (light emitting device), that is, does not include a substrate (electrode substrate) provided in the optical semiconductor device.
  • the element with two layers includes an optical semiconductor element, a phosphor layer, and a reflective layer (reflective member), and optionally includes a diffusion layer.
  • the element with two layers is preferably composed of an optical semiconductor element, a phosphor layer and a reflective layer, or is composed of an optical semiconductor element, a phosphor layer, a reflective layer and a diffusion layer. That is, the element with two layers is configured so as not to be electrically connected to the electrode provided on the substrate of the optical semiconductor device.
  • the two-layered element is a part of an optical semiconductor device, that is, a part for producing the optical semiconductor device, and is a device that is distributed by itself and is industrially usable.
  • the element with two layers 1 includes an optical semiconductor element 2, a phosphor layer 3, and a reflective layer 4.
  • the optical semiconductor element 2 is, for example, an LED (light emitting diode element) or LD (semiconductor laser element) that converts electrical energy into optical energy.
  • the optical semiconductor element 2 is a blue LED that emits blue light.
  • the optical semiconductor element 2 does not include a rectifier (semiconductor element) such as a transistor having a technical field different from that of the optical semiconductor element.
  • the optical semiconductor element 2 has a substantially flat plate shape along the left-right direction and the front-rear direction.
  • the optical semiconductor element 2 has a substantially rectangular shape in plan view (preferably, a substantially square shape in plan view).
  • the optical semiconductor element 2 includes a light emitting surface 21, a facing surface 22, and a side surface 23.
  • the light emitting surface 21 is the upper surface of the optical semiconductor element 2.
  • the light emitting surface 21 has a flat shape.
  • a phosphor layer 3 (described later) is provided on the light emitting surface 21.
  • the facing surface 22 is a lower surface of the optical semiconductor element 2 and is a surface on which the electrode 24 is formed.
  • the facing surface 22 is disposed to face the light emitting surface 21 with a space on the lower side.
  • a plurality (two) of the electrodes 24 are provided and have a shape that slightly protrudes downward from the facing surface 22.
  • the side surface 23 connects the peripheral edge of the light emitting surface 21 and the peripheral edge of the facing surface 22.
  • the thickness is, for example, 0.1 ⁇ m or more, preferably 0.2 ⁇ m or more, more preferably 10 ⁇ m or more. And, for example, 500 ⁇ m or less, preferably 200 ⁇ m or less.
  • the length in the left-right direction and / or the front-rear direction of the optical semiconductor element 2 is, for example, 200 ⁇ m or more, preferably 500 ⁇ m or more, and for example, 3000 ⁇ m or less, preferably 2000 ⁇ m or less.
  • the phosphor layer 3 is disposed on the upper side and the side of the optical semiconductor element 2 so as to cover the light emitting surface 21 and the side surface 23 of the optical semiconductor element 2.
  • the phosphor layer 3 has a substantially rectangular shape in plan view (preferably, a substantially square shape in plan view), and is formed so as to include the optical semiconductor element 2 when projected in the vertical direction.
  • the phosphor layer 3 includes an inner portion 31 disposed above the optical semiconductor element 2 and an outer portion 32 disposed outside the inner portion 31.
  • the inner portion 31 has a substantially flat plate shape along the left-right direction and the front-rear direction, and is formed to have the same shape as the optical semiconductor element 2 in plan view. That is, the entire lower surface of the inner portion 31 is in contact with and covers the entire light emitting surface 21 of the optical semiconductor element 2.
  • the outer portion 32 has a substantially rectangular frame shape in plan view extending in the vertical direction.
  • the outer portion 32 includes an upper portion 32a and a lower portion 32b.
  • the outer portion 32 includes a virtual surface 6 that extends outward in the left-right direction and the front-rear direction of the optical semiconductor element 2 along the light-emitting surface 21 between the upper portion 32 a and the lower portion 32 b. That is, the outer portion 32 is partitioned by the virtual surface 6 into an upper portion 32 a and a lower portion 32 b in the vertical direction.
  • the upper part 32a of the outer part 32 is disposed outside the inner part 31, and the peripheral edge of the inner part 31 and the inner peripheral edge of the upper part 32a are integrally continuous.
  • the lower part 32b of the outer part 32 is arranged outside the optical semiconductor element 2 so as to be in contact with and cover the side surface 23 of the optical semiconductor element 2. That is, the inner peripheral end surface of the lower portion 32 b is in contact with the entire side surface 23 of the optical semiconductor element 2.
  • the thickness of the inner portion 31 of the phosphor layer 3, that is, the vertical distance between the light emitting surface 21 and the upper surface of the phosphor layer 3 (A shown in FIG. 1B) is, for example, 10 ⁇ m or more, preferably 50 ⁇ m or more. For example, it is 300 micrometers or less, Preferably, it is 150 micrometers or less.
  • the ratio between the vertical distance A and the length of the light emitting surface 21 in the horizontal direction or the longitudinal direction (distance in the orthogonal direction) is, for example, 1: 100 to 30: 100, preferably 5: 100 to 15: 100. is there.
  • the distance in the left-right direction or the front-rear direction with respect to (point k) is, for example, 10 ⁇ m or more, preferably 50 ⁇ m or more, more preferably 70 ⁇ m or more, and, for example, 2000 ⁇ m or less, preferably Is 1500 ⁇ m or less, more preferably 500 ⁇ m or less, and even more preferably 150 ⁇ m or less.
  • the ratio between the distance X and the length of the light emitting surface 21 in the left-right direction or the front-rear direction is, for example, 1: 100 to 150: 100, preferably 5: 100 to 100: 100, more preferably 7: 100 to 50: 100.
  • the phosphor layer 3 is formed of, for example, a phosphor composition containing a phosphor and a resin.
  • the phosphor converts the wavelength of the light emitted from the optical semiconductor element 2.
  • Examples of the phosphor include a yellow phosphor that can convert blue light into yellow light, and a red phosphor that can convert blue light into red light.
  • yellow phosphor examples include silicate phosphors such as (Ba, Sr, Ca) 2 SiO 4 ; Eu, (Sr, Ba) 2 SiO 4 : Eu (barium orthosilicate (BOS)), for example, Y 3 Al Garnet-type phosphors having a garnet-type crystal structure such as 5 O 12 : Ce (YAG (yttrium, aluminum, garnet): Ce), Tb 3 Al 3 O 12 : Ce (TAG (terbium, aluminum, garnet): Ce) Examples thereof include oxynitride phosphors such as Ca- ⁇ -SiAlON.
  • silicate phosphors such as (Ba, Sr, Ca) 2 SiO 4 ; Eu, (Sr, Ba) 2 SiO 4 : Eu (barium orthosilicate (BOS)
  • Y 3 Al Garnet-type phosphors having a garnet-type crystal structure such as 5 O 12 : Ce (YAG (yttrium, aluminum, garnet): Ce
  • red phosphor examples include nitride phosphors such as CaAlSiN 3 : Eu and CaSiN 2 : Eu.
  • Examples of the shape of the phosphor include a spherical shape, a plate shape, and a needle shape.
  • the average value of the maximum length of the phosphor (in the case of a sphere, the average particle diameter) is, for example, 0.1 ⁇ m or more, preferably 1 ⁇ m or more, and for example, 200 ⁇ m or less, preferably 100 ⁇ m or less. But there is.
  • Fluorescent substances can be used alone or in combination of two or more.
  • the blending ratio of the phosphor is, for example, 10% by mass or more, preferably 20% by mass or more, and for example, 80% by mass or less, preferably 70% by mass or less with respect to the phosphor composition.
  • the resin is a matrix in which the phosphor is uniformly dispersed in the phosphor composition
  • examples of the resin include a curable resin and a thermoplastic resin.
  • a curable resin is used.
  • the curable resin include thermosetting resins such as a two-stage reaction curable resin and a one-stage reaction curable resin.
  • the two-stage reaction curable resin has two reaction mechanisms.
  • the A stage state is changed to the B stage (semi-cured), and then in the second stage reaction, the B stage state is obtained.
  • C-stage complete curing
  • the two-stage reaction curable resin is a thermosetting resin that can be in a B-stage state under appropriate heating conditions.
  • the B stage state is a state between the A stage state where the thermosetting resin is in a liquid state and the fully cured C stage state, and curing and gelation proceed slightly, and the compression elastic modulus is C stage.
  • the first-stage reaction curable resin has one reaction mechanism, and can be C-staged (completely cured) from the A-stage state by the first-stage reaction.
  • a one-stage reaction curable resin can stop the reaction in the middle of the first-stage reaction and change from the A-stage state to the B-stage state.
  • the reaction is restarted, and the thermosetting resin that can be C-staged (completely cured) from the B-stage state is included. That is, the thermosetting resin includes a thermosetting resin that can be in a B-stage state.
  • the one-stage reaction curable resin cannot be controlled to stop in the middle of the one-stage reaction, that is, cannot enter the B stage state, and is changed from the A stage state to the C stage (completely cured). ) Can be included.
  • thermosetting resin includes a thermosetting resin that can be in a B-stage state.
  • thermosetting resin examples include silicone resin, epoxy resin, urethane resin, polyimide resin, phenol resin, urea resin, melamine resin, and unsaturated polyester resin.
  • the thermosetting resin that can be in the B-stage state preferably includes a silicone resin and an epoxy resin, and more preferably includes a silicone resin.
  • silicone resin examples include a phenyl silicone resin containing a phenyl group in the molecule, for example, a methyl silicone resin containing a methyl group in the molecule.
  • Thermosetting resins can be used alone or in combination of two or more.
  • the blending ratio of the resin is the remainder of the blending ratio of the phosphor (and additive), and is, for example, 20% by mass or more, preferably 30% by mass or more, and, for example, 90% by mass with respect to the phosphor composition. It is not more than mass%, preferably not more than 80 mass%.
  • the fluorescent composition may contain known additives (described later) such as light diffusing particles (described later), fillers (described later), thixotropic particles (described later) in an appropriate ratio.
  • the mixing ratio of the light diffusing particles is, for example, 1% by mass or more, preferably 10% by mass or more, and, for example, 60% by mass or less with respect to the fluorescent composition. Preferably, it is 50 mass% or less.
  • the blending ratio of the filler is, for example, 1% by mass or more, preferably 10% by mass or more, and, for example, 60% by mass or less, preferably, with respect to the fluorescent composition. It is 50 mass% or less.
  • the mixing ratio of the thixotropy-imparting particles is, for example, 0.1% by mass or more, preferably 0.5% by mass or more with respect to the fluorescent composition. It is 10 mass% or less, Preferably, it is 3 mass% or less.
  • the reflection layer 4 is disposed on the outer side in the left-right direction and on the outer side in the front-rear direction with respect to both the optical semiconductor element 2 and the phosphor layer 3.
  • the reflective layer 4 has a substantially rectangular frame shape in plan view extending in the vertical direction.
  • the inner peripheral edge (surface) of the reflective layer 4 is in contact with and covers the entire side surface of the phosphor layer 3.
  • the reflective layer 4 is disposed so as to include the optical semiconductor element 2 and the phosphor layer 3 when projected in the left-right direction or the front-rear direction.
  • the upper edge of the reflective layer 4 coincides with the upper surface of the phosphor layer 3 in the vertical direction
  • the lower edge of the reflective layer 4 is the lower surface of the phosphor layer 3 and the opposite surface of the optical semiconductor element 2 in the vertical direction.
  • Matches 22 That is, the reflective layer 4 is formed such that its upper surface is flush with the upper surface of the phosphor layer 3 and its lower surface is flush with the lower surface of the phosphor layer 3 and the opposing surface 22 of the optical semiconductor element 2. Has been.
  • the reflective layer 4 preferably satisfies the following formula (1), more preferably the following formula (1 ′), and still more preferably the following formula (1 ′′).
  • 100 ° ⁇ 1 ⁇ 160 ° (1 ′) 100 ° ⁇ 1 ⁇ 150 ° ( 1 ′′) ⁇ 1 is a straight line L 1 connecting the edge (point m) of the light emitting surface 21 of the optical semiconductor element 2 and the inner edge (point n) of the upper edge of the reflective layer 4 along the left-right direction or the front-rear direction in plan view. An angle formed by the light emitting surface 21 (see FIG. 1B) is shown.
  • the vertical distance Y between the light emitting surface 21 of the optical semiconductor element 2 and the inner edge (point n) of the upper edge of the reflective layer 4 (that is, the intersection of the inner edge of the reflective layer 4 and the virtual surface 6 (
  • the distance Y) between the point k) and the inner edge (point n) of the upper end edge of the reflective layer 4 is, for example, 10 ⁇ m or more, preferably 50 ⁇ m or more, more preferably 150 ⁇ m or more. It is 800 ⁇ m or less, preferably 500 ⁇ m or less, and more preferably 250 ⁇ m or less.
  • the reflective layer 4 extends in the vertical direction so as to be substantially perpendicular to the facing surface 22 of the optical semiconductor element 2. That is, the angle ⁇ 2 formed by the inner edge surface of the reflective layer 4 and the lowermost surface of the phosphor layer 3 is, for example, 88 ° or more and 92 ° or less from the viewpoint of manufacturability, directivity, and illuminance. The angle is preferably 90 °.
  • the length of the reflective layer 4 in the left-right direction or the front-rear direction exceeds, for example, 0 ⁇ m from the viewpoint of directivity,
  • the thickness is 50 ⁇ m or more, more preferably 100 ⁇ m or more, and for example, 500 ⁇ m or less, preferably 300 ⁇ m or less.
  • the distance in the left-right direction or the front-rear direction from the inner edge of the lower end edge of the reflective layer 4 to the edge of the facing surface 22 of the optical semiconductor element 2 exceeds, for example, 0 ⁇ m, preferably It is 10 ⁇ m or more, more preferably 50 ⁇ m or more, still more preferably 70 ⁇ m or more, and for example, 2000 ⁇ m or less, preferably 1500 ⁇ m or less, more preferably 500 ⁇ m or less, and further preferably 150 ⁇ m or less.
  • the reflective layer 4 has a reflectance of 70% or more, preferably 80% or more, more preferably 90% or more, for example, 100% when irradiated with light having a wavelength of 450 nm with a thickness of 100 ⁇ m. It is as follows. By setting the reflectance within the above range, the front illuminance can be further improved.
  • the method for measuring the reflectance can be obtained by measuring the reflectance at a wavelength of 450 nm using an ultraviolet-visible near-infrared spectrophotometer with an optical path confirmation method using an integrating sphere.
  • the reflective layer 4 has a light transmittance of, for example, 20% or less, preferably 10% or less when irradiated with light having a wavelength of 450 nm with a thickness of 100 ⁇ m.
  • the method for measuring the light transmittance will be described in detail in Examples.
  • the reflective layer 4 is formed of, for example, a reflective composition containing a light reflection component and a resin.
  • the light reflecting component is a particle that reflects without transmitting light, and examples thereof include white particles such as white inorganic particles and white organic particles.
  • white inorganic particles are used from the viewpoint of illuminance and durability.
  • Examples of the material constituting the white inorganic particles include oxides such as titanium oxide, zinc oxide, zirconium oxide, and aluminum oxide, such as carbonates such as lead white (basic lead carbonate) and calcium carbonate, such as kaolin. Clay minerals. From the viewpoint of illuminance, an oxide is preferable, and titanium oxide is more preferable.
  • the average particle diameter of the light reflection component is, for example, 0.1 ⁇ m or more, preferably 0.2 ⁇ m or more, and for example, 10 ⁇ m or less, preferably 2.0 ⁇ m or less.
  • the average particle diameter of the particles is calculated as a D50 value, and specifically measured by a laser diffraction particle size distribution meter.
  • the content ratio of the light reflection component is, for example, 1% by mass or more, preferably 5% by mass or more, more preferably 10% by mass or more, and, for example, 50% by mass or less with respect to the reflective composition. Preferably, it is 30 mass% or less.
  • Resin is a matrix that uniformly disperses the light reflecting component in the reflective composition.
  • the resin is the same as the resin contained in the fluorescent composition.
  • the blending ratio of the resin is the balance of the blending ratio of the light reflection component (and additive), and for example, 10% by mass or more, preferably 20% by mass or more, more preferably, with respect to the reflective composition, For example, it is 99% by mass or less, preferably 75% by mass or less, and more preferably less than 50% by mass.
  • the reflective composition can also contain additives such as light diffusing particles, fillers, and thixotropic particles at an appropriate ratio.
  • the light diffusing particles are transparent particles that diffuse light and include, for example, particles having a high refractive index difference from the resin.
  • the refractive index difference between the light diffusing particles and the resin is, for example, 0.04 or more, preferably 0.10 or more, and, for example, 0.50 or less.
  • Specific examples include light diffusing inorganic particles and light diffusing organic particles.
  • Examples of the light diffusing inorganic particles include silica particles and composite inorganic oxide particles (such as glass particles).
  • the composite inorganic oxide particles are preferably glass particles, specifically containing silica or silica and boron oxide as main components, and also containing aluminum oxide, calcium oxide, zinc oxide, strontium oxide, Magnesium oxide, zirconium oxide, barium oxide, antimony oxide and the like are contained as accessory components.
  • the content ratio of the main component in the composite inorganic oxide particles is, for example, 40% by mass or more, preferably 50% by mass or more, and for example, 90% by mass or less, preferably with respect to the composite inorganic oxide particles. 80% by mass or less.
  • the content ratio of the subcomponent is the remainder of the content ratio of the main component described above.
  • Examples of the light diffusing organic particles include acrylic resin particles, styrene resins, acrylic-styrene resin particles, silicone resin particles, polycarbonate resin particles, benzoguanamine resin particles, polyolefin resin particles, and polyester resin particles. , Polyamide resin particles, polyimide resin particles, and the like.
  • the refractive index of the light diffusing particles is, for example, 1.40 or more and 1.60 or less.
  • the refractive index difference between the light diffusing particles and the resin is, for example, 0.04 or more, preferably 0.10 or more, and, for example, 0.50 or less.
  • the refractive index is measured by, for example, an Abbe refractometer.
  • the light diffusing particles are preferably light diffusing inorganic particles, and more preferably silica particles and composite inorganic oxide particles, from the viewpoint of light diffusibility and durability.
  • the average particle diameter of the light diffusing particles is, for example, 1.0 ⁇ m or more, preferably 5.0 ⁇ m or more, and for example, 100 ⁇ m or less, preferably 50 ⁇ m or less.
  • the content ratio of the light diffusing particles is, for example, 1% by mass or more, preferably 10% by mass or more, more preferably 20% by mass with respect to the reflective composition. %, For example, 50% by mass or less, preferably 40% by mass or less.
  • the filler is a transparent particle having a low refractive index difference from the resin. Specifically, particles having a refractive index difference with the resin of 0.03 or less, preferably 0.01 or less. Thereby, the rigidity of the reflective layer 4 can be improved while ensuring the transparency of the reflective layer 4.
  • the refractive index of the filler is, for example, 1.40 or more, preferably 1.45 or more, and for example, 1.60 or less, preferably 1.55 or less.
  • Such a filler examples include particles of the same material as the light diffusing particles, preferably inorganic particles, and more preferably silica particles and composite inorganic oxide particles (such as glass particles).
  • the average particle diameter of the filler is, for example, 1.0 ⁇ m or more, preferably 5.0 ⁇ m or more, and for example, 100 ⁇ m or less, preferably 50 ⁇ m or less.
  • light diffusing particles or fillers are appropriately distinguished according to the difference in refractive index of the resin even if the materials are the same.
  • the content ratio of the filler is, for example, 1% by mass or more, preferably 10% by mass or more, more preferably more than 20% by mass with respect to the reflective composition. For example, it is 50 mass% or less, Preferably, it is 40 mass% or less.
  • the thixotropy-imparting particles are particles for imparting or improving the thixotropy of the reflective composition, and preferably include nano silica such as fumed silica (fumed silica) from the viewpoint of reflectivity.
  • the fumed silica may be, for example, either hydrophobic fumed silica whose surface is hydrophobized by a surface treating agent such as dimethyldichlorosilane or silicone oil, or hydrophilic fumed silica that is not surface-treated.
  • the average particle diameter of nano silica is, for example, 1 nm or more, preferably 5 nm or more, and for example, 200 nm or less, preferably 50 nm or less.
  • the specific surface area of nanosilica (particularly fumed silica) (BET method), for example, 50 m 2 / g or more, preferably not 200 meters 2 / g or more, and is, for example, at most 500m 2 / g.
  • the content ratio of the thixotropic particles in the reflective composition is, for example, 0.1% by mass or more, preferably 0.5% by mass or more. 10% by mass or less, preferably 3% by mass or less.
  • the half-value angle of light emitted from the element with two layers 1 is, for example, 130 degrees or less, preferably 125 degrees or less, more preferably 120 degrees or less, and for example, 90 degrees or more, preferably 100 degrees. More than degrees.
  • the method for measuring the half-value angle will be described in detail in Examples.
  • the orientation angle (COA) of light emitted from the element with two layers 1 is, for example, 0.10 degrees or less, preferably 0.05 degrees or less, more preferably 0.03 degrees or less, , 0.01 degrees or more.
  • the method for measuring the orientation angle will be described in detail in Examples.
  • the front illuminance of the light emitted from the two-layered element 1 is, for example, more than 60%, preferably 100% or more, more preferably 110% or more, and further preferably 120% or more. For example, it is 130% or less.
  • the method for measuring the front illuminance will be described in detail in Examples.
  • the manufacturing method of the element 1 with two layers 1 of the first embodiment is equipped with a temporary fixing sheet preparation process, a temporary fixing process, a fluorescent substance layer formation process, a fluorescent substance layer removal process, a reflective layer formation process, and a cutting process, for example.
  • a temporarily fixing sheet is prepared.
  • the temporary fixing sheet 40 can be a known or commercially available sheet, and includes, for example, a support base 41 and a pressure-sensitive adhesive layer 42 disposed on the support base 41.
  • Examples of the support substrate 41 include polymer films such as polyethylene films and polyester films (PET), for example, ceramic sheets, and metal foils.
  • PET polyester films
  • the pressure sensitive adhesive layer 42 is disposed on the entire upper surface of the support base material 41.
  • the pressure-sensitive adhesive layer 42 has a sheet shape on the upper surface of the support substrate 41.
  • the pressure-sensitive adhesive layer 42 is formed from a pressure-sensitive adhesive whose pressure-sensitive adhesive force is reduced by, for example, treatment (for example, irradiation of ultraviolet rays or heating).
  • the thickness of the pressure-sensitive adhesive layer 42 is, for example, 1 ⁇ m or more, preferably 10 ⁇ m or more, and for example, 1000 ⁇ m or less, preferably 500 ⁇ m or less.
  • the plurality of optical semiconductor elements 2 are temporarily fixed on the temporary fixing sheet 40 at intervals in the left-right direction and the front-rear direction.
  • the opposing surfaces 22 of the plurality of optical semiconductor elements 2 are pressure-sensitive bonded to the upper surface of the pressure-sensitive adhesive layer 42.
  • the optical semiconductor element 2 is pressed against the pressure-sensitive adhesive layer 42 so that the plurality of electrodes 24 are buried in the pressure-sensitive adhesive layer 42.
  • the phosphor layer 3 is disposed on the temporary fixing sheet 40 so as to cover the optical semiconductor element 2.
  • a phosphor transfer sheet in which the phosphor layer 3 is disposed on the release sheet is prepared, and then the optical semiconductor element 2 is disposed so that the optical semiconductor element 2 is buried in the phosphor layer 3.
  • the phosphor transfer sheet is pressed and laminated against the temporarily fixed sheet 40, and then the release sheet is peeled from the phosphor layer 3.
  • a phosphor composition and a solvent are blended to prepare a varnish of the phosphor composition, and the varnish is applied to the surface of the release sheet and dried. Thereafter, when the fluorescent composition contains a thermosetting resin that can be in a B-stage state, the fluorescent composition is B-staged (semi-cured). Specifically, the fluorescent composition is heated. Thereby, the phosphor layer 3 is formed on the release sheet.
  • the light emitting surface 21 and the side surface 23 of the optical semiconductor element 2 and the upper surface of the temporary fixing sheet 40 (the upper surface exposed from the optical semiconductor element 2) are covered with the phosphor layer 3. That is, the optical semiconductor element assembly 9 with a phosphor layer is obtained.
  • the phosphor layer 3 between the adjacent optical semiconductor elements 2 is removed so that the phosphor layer 3 has a desired size.
  • the phosphor layer 3 is cut into a substantially grid shape in plan view.
  • a gap 44 is formed in a portion where the phosphor layer 3 is removed.
  • the reflective layer 4 is formed in the gap 44 in the reflective layer forming step.
  • a reflection layer transfer sheet in which a reflection layer 4 having a desired pattern is arranged on a release sheet is prepared, and subsequently, the optical semiconductor with a phosphor layer is filled so that the gap 44 is filled with the reflection layer 4.
  • the reflective layer transfer sheet is pressed against the element assembly 9 and laminated, and then the release sheet is peeled from the reflective layer 4.
  • the reflective layer transfer sheet for example, a reflective composition and a solvent are blended to prepare a varnish of the reflective composition, and the varnish is applied to the surface of the release sheet and dried. Thereafter, when the reflective composition contains a thermosetting resin that can be in a B-stage state, the reflective composition is made into a B-stage (semi-cured). Specifically, the reflective composition is heated. Thereby, the reflective layer 4 is formed. Thereafter, the reflective layer 4 is patterned by a known method so as to have a pattern corresponding to the gap 44.
  • the varnish can be heated and dried by directly potting the varnish of the reflective composition into the gap 44 without using the reflective layer transfer sheet.
  • the phosphor layer 3 and / or the reflective layer 4 contains a thermosetting resin and is in the B-stage state or the A-stage state
  • the phosphor layer is further heated by, for example, an oven. 3 and / or the reflective layer 4 is cured (completely cured, C-staged).
  • the plurality of optical semiconductor elements 2, the phosphor layer 3, and the reflective layer 4 are laminated on the temporarily fixing sheet 40. That is, the optical semiconductor element assembly 10 with a reflective layer and a phosphor layer is obtained.
  • the optical semiconductor element assembly 10 with the reflective layer and the phosphor layer is cut (separated).
  • the reflective layer 4 is cut between the optical semiconductor elements 2 adjacent to each other as indicated by the phantom lines in FIG. 2E. As a result, the plurality of optical semiconductor elements 2 are separated into pieces.
  • a dicing apparatus using a narrow disk-shaped dicing saw for example, a cutting apparatus using a cutter, for example, a cutting apparatus such as a laser irradiation apparatus is used.
  • the temporary fixing sheet 40 is peeled from the optical semiconductor element 2 as indicated by a virtual line in FIG. 2F.
  • an optical semiconductor device 8 such as a light emitting diode device can be obtained by flip-chip mounting the element with two layers 1 on an electrode substrate 7 such as a diode substrate.
  • the electrode substrate 7 has a substantially flat plate shape. Specifically, the electrode substrate 7 is formed of a laminated plate in which a conductor layer is laminated as a circuit pattern on the upper surface of an insulating substrate.
  • the insulating substrate is made of, for example, a silicon substrate, a ceramic substrate, a plastic substrate (for example, a polyimide resin substrate), or the like.
  • the conductor layer is made of a conductor such as gold, copper, silver, or nickel.
  • the conductor layer includes an electrode (not shown) for electrical connection with the single optical semiconductor element 2.
  • the thickness of the electrode substrate 7 is, for example, 25 ⁇ m or more, preferably 50 ⁇ m or more, and, for example, 2000 ⁇ m or less, preferably 1000 ⁇ m or less.
  • the reflective layer 4 is disposed on the outer side in the left-right direction and the front-rear direction with respect to both the optical semiconductor element 2 and the phosphor layer 3. For this reason, the light emitted or reflected from the phosphor layer 3 and the side surface 23 of the optical semiconductor element 2 can be reflected upward. Therefore, directivity and front illuminance are good.
  • the phosphor layer 3 is in contact with the entire side surface 23 of the optical semiconductor element 2. For this reason, the light extraction efficiency is improved.
  • the phosphor layer 3 has an outer portion 32 arranged so as to include the virtual surface 6 extending to the outside of the optical semiconductor element 2. Therefore, when the phosphor layer 3 is disposed on the light emitting surface 21 of the optical semiconductor element 2 (see, for example, FIG. 2C and FIG. 2D), the phosphor layer 3 is assumed to be laterally moved from the light emitting surface 21 of the optical semiconductor element 2. Or even if it deviates in the front-rear direction, it is possible to suppress the occurrence of an uncoated portion where the phosphor layer 3 is not coated on the light emitting surface 21 of the optical semiconductor element 2. That is, the outer portion 32 of the phosphor layer 3 can reliably cover the light emitting surface 21 of the optical semiconductor element 2. As a result, the positional accuracy of the phosphor layer 3 with respect to the optical semiconductor element 2 is improved in the left-right direction and the front-rear direction.
  • the two-layered element 1 is a component for manufacturing an optical semiconductor device 8 such as a light-emitting diode device by being mounted on an electrode substrate 7 such as a diode substrate.
  • an optical semiconductor device 8 such as a light-emitting diode device
  • an electrode substrate 7 such as a diode substrate.
  • the element with two layers 1 can be checked for light emitting performance (directivity, illuminance, color, etc.) by connecting to a test device before being mounted on the electrode substrate 7. Therefore, when the optical semiconductor device 8 incompatible with the desired performance is generated, the recovery operation of the electrode substrate 7 incorporated in the optical semiconductor device 8 can be prevented in advance. This is useful as a manufacturing part.
  • the optical semiconductor element 2, the phosphor layer 3, and the reflective layer 4 are formed in a substantially square shape in plan view.
  • a part or all of these are formed in a substantially rectangular shape in plan view. You can also.
  • the point X is such that the distance X between the edge (point m) of the light emitting surface 21 of the optical semiconductor element 2 and the outer edge (point k) on the light emitting surface 21 of the phosphor layer 3 is the shortest.
  • Select m and point k are determined based on the selected point m, point k, and side sectional view at that time.
  • it is preferable that the expressions (1) to (2 ′) are satisfied under the condition that the point m and the point k are selected so that at least X is the shortest.
  • the equations (1) to (2 ′) are satisfied even when the above ⁇ 1 or the like is determined in the side sectional view orthogonal to the selected side sectional view.
  • the phosphor layer 3 is formed so that the upper surface thereof is flush with the upper surface of the reflective layer 4.
  • the upper surface is located below the upper surface of the reflective layer 4.
  • the phosphor layer 3 is formed so that the upper surface thereof is flush with the upper surface of the reflective layer 4.
  • the upper surface of the reflective layer 4 may be positioned above the upper surface.
  • the vertical distance (YA) from the inner edge (point n) of the upper edge of the reflective layer 4 to the upper surface of the phosphor layer 3 is, for example, 100 ⁇ m or less, preferably 50 ⁇ m or less, and for example, 0 ⁇ m or more.
  • the upper surface of the phosphor layer 3 is exposed, but for example, as shown in FIG. 5, a diffusion layer 5 can be disposed on the upper surface of the phosphor layer 3.
  • the diffusion layer 5 has a substantially flat plate shape along the left-right direction and the front-rear direction, and is formed to have the same shape as the inner portion 31 of the phosphor layer 3 in plan view. Further, the upper surface of the diffusion layer 5 coincides with the upper end edge of the reflection layer 4 in the vertical direction. That is, the diffusion layer 5 is formed so that the upper surface thereof is flush with the upper surface of the reflection layer 4.
  • the thickness (length in the vertical direction, C shown in FIG. 5) of the diffusion layer 5 is, for example, 10 ⁇ m or more, preferably 50 ⁇ m or more, and, for example, 240 ⁇ m or less, preferably 150 ⁇ m or less.
  • the diffusion layer 5 has a light transmittance of 60% or more, preferably 80% or more, for example, 100% or less, when irradiated with light having a wavelength of 450 nm with a thickness of 100 ⁇ m.
  • the diffusion layer 5 is made of, for example, a diffusion transparent composition containing a transparent resin and light diffusing particles.
  • the transparent resin the same resin as that described above in the reflective layer 4 can be used, and a silicone resin is preferable.
  • the blending ratio of the transparent resin is, for example, 5% by mass or more, preferably 10% by mass or more, more preferably 25% by mass or more, for example, 99% by mass with respect to the diffusing transparent composition.
  • it is preferably 80% by mass or less, and more preferably less than 50% by mass.
  • the light diffusing particles may be the same as the light diffusing particles described above in the reflective layer 4.
  • light diffusing inorganic particles having a high refractive index difference from a transparent resin for example, silicone resin
  • silicon oxide particles are more preferable.
  • the content ratio of the light diffusing particles is, for example, 1% by mass or more, preferably 20% by mass or more, more preferably more than 50% by mass with respect to the diffusing transparent composition, and for example, 95% by mass.
  • it is preferably 90% by mass or less, more preferably 75% by mass or less, and further preferably 40% by mass or less.
  • the diffusive transparent composition can also contain known additives such as fillers and thixotropic particles at an appropriate ratio.
  • the filler may be the same as the filler described above in the reflective layer 4, and preferably silica particles and composite inorganic oxide particles (such as glass particles).
  • the blending ratio of the filler is, for example, 1% by mass or more, preferably 10% by mass or more, more preferably more than 20% by mass with respect to the diffusing transparent composition. For example, it is 50% by mass or less, preferably 40% by mass or less.
  • the thixotropic property-imparting particles may be the same as the thixotropic property-imparting particles described above in the reflective layer 4, and preferably nanosilica.
  • the blending ratio of the thixotropic particles is, for example, 0.1% by mass or more, preferably 0.5% by mass or more with respect to the diffusive transparent composition. 10% by mass or less, preferably 3% by mass or less.
  • the embodiment of FIG. 5 is also included in the present invention, and has the same effects as the embodiment of FIG. 1B. From the viewpoint of further improving the directivity and the front illuminance, the embodiment of FIG. 5 is preferable.
  • the diffusion layer 5 is formed so that the upper surface thereof is flush with the upper surface of the reflection layer 4.
  • the diffusion layer 5 is reflective on the upper surface. It may be formed so as to be located above or below the upper surface of the layer 4.
  • the vertical distance ⁇ Y ⁇ (A + C) ⁇ between the inner edge (point n) of the upper end edge of the reflective layer 4 and the upper surface of the diffusion layer 5 is, for example, 100 ⁇ m or less, preferably 50 ⁇ m or less. For example, it is 0 ⁇ m or more.
  • Second Embodiment A second embodiment of the device with two layers 1 of the present invention will be described with reference to FIGS. 6A to 6B.
  • the element with two layers 1 includes an optical semiconductor element 2, a phosphor layer 3, and a reflective layer 4.
  • the phosphor layer 3 is disposed on the upper side of the optical semiconductor element 2 so as to cover the light emitting surface 21 of the optical semiconductor element 2.
  • the phosphor layer 3 has a substantially flat plate shape along the left-right direction and the front-rear direction.
  • the phosphor layer 3 has a substantially rectangular shape in plan view, and is formed so as to include the optical semiconductor element 2 when projected in the vertical direction.
  • the phosphor layer 3 includes an inner portion 31 disposed above the optical semiconductor element 2 and an outer portion 32 disposed outside the inner portion 31.
  • the inner portion 31 has a substantially flat plate shape along the left-right direction and the front-rear direction, and is formed to have the same shape as the optical semiconductor element 2 in plan view. That is, the entire lower surface of the inner portion 31 covers the entire light emitting surface 21 of the optical semiconductor element 2.
  • the outer part 32 is disposed outside the inner part 31, and the peripheral edge of the inner part 31 and the inner peripheral edge of the outer part 32 are integrally continuous.
  • the outer portion 32 has a substantially flat plate shape having a substantially rectangular frame shape in plan view, and has the same thickness (length in the vertical direction) as the inner portion 31.
  • the outer portion 32 is disposed on the virtual surface 6. That is, the lower surface of the outer portion 32 coincides with the virtual surface 6.
  • the ratio of the length in the left-right direction or the front-rear direction of the outer portion 32 and the inner portion 31 is, for example, 1: 100 to 50: 100, preferably 7: 100 to 25: 100.
  • the reflection layer 4 is disposed on the outer side in the left-right direction and on the outer side in the front-rear direction with respect to both the optical semiconductor element 2 and the phosphor layer 3.
  • the reflective layer 4 has a substantially rectangular frame shape in plan view extending in the vertical direction.
  • the reflective layer 4 has an upper part 4a and a lower part 4b disposed below the upper part 4a.
  • the upper part 4a is arranged on the outer side in the left-right direction and the outer side in the front-rear direction of the phosphor layer 3, and is in contact with and covers the entire side surface of the phosphor layer 3. That is, the inner peripheral end surface of the upper portion 4 a is in contact with the entire side surface of the phosphor layer 3.
  • the upper portion 4a is formed so as to include the phosphor layer 3 when projected in the left-right direction or the front-rear direction. Specifically, in the vertical direction, the upper end edge of the upper portion 4 a (the upper end edge of the reflective layer 4) coincides with the upper surface of the phosphor layer 3, and the lower end edge of the lower portion 4 b coincides with the lower surface of the phosphor layer 3. .
  • the lower portion 4b has an upper end that is integrally continuous with a lower end of the upper portion 4a, and is formed to be wider than the upper portion 4a toward the inner side in the left-right direction and the inner side in the front-rear direction.
  • the lower portion 4b is disposed on the outer side in the left-right direction and the outer side in the front-rear direction of the optical semiconductor element 2, and is in contact with and covers the entire side surface 23 of the optical semiconductor element 2. That is, the inner peripheral end surface of the lower portion 4 b is in contact with the entire side surface 23 of the optical semiconductor element 2.
  • the lower part 4b is formed so as to include the optical semiconductor element 2 when projected in the left-right direction or the front-rear direction. Specifically, in the vertical direction, the upper end edge of the lower part 4 b coincides with the light emitting surface 21 of the optical semiconductor element 2, and the lower end edge of the lower part 4 b (lower end edge of the reflective layer 4) is the facing surface of the optical semiconductor element 2. Matches 22. That is, the reflective layer 4 is formed such that its upper surface is flush with the upper surface of the phosphor layer 3 and its lower surface is flush with the lower surface of the phosphor layer 3 and the opposing surface 22 of the optical semiconductor element 2. Has been.
  • the reflective layer 4 preferably satisfies the above formula (1), more preferably the above formula (1 ′), and still more preferably the above formula (1 ′′).
  • the angle ⁇ 2 formed by the inner edge surface of the reflective layer 4 and the lowermost surface of the phosphor layer 3 and the length of the reflective layer 4 in the left-right direction or the front-rear direction (particularly the length in the left-right direction or front-rear direction at the upper edge D) D is the same as in the first embodiment.
  • the distance B in the left-right direction or the front-rear direction from the inner edge of the lower end edge of the reflective layer 4 to the edge of the facing surface 22 of the optical semiconductor element 2 is 0 ⁇ m.
  • the distance X is the same as in the first embodiment.
  • the distance B in the left-right direction or the front-rear direction satisfies the relational expression (3) of B ⁇ X.
  • the manufacturing method of the element 1 with two layers of 2nd Embodiment is equipped with a fluorescent substance layer preparation process, an optical semiconductor element arrangement
  • the phosphor layer 3 is prepared in the phosphor layer preparation step.
  • the phosphor layer transfer sheet in the phosphor layer forming step described above in the first embodiment is used.
  • a plurality of optical semiconductor elements 2 are arranged on the phosphor layer 3 with a space in the left-right direction and the front-rear direction.
  • a plurality of optical semiconductor elements 2 are arranged on the phosphor layer 3 so that the upper surface of the phosphor layer 3 and the light emitting surface 21 of the optical semiconductor element 2 are in contact with each other. Thereby, the optical semiconductor element assembly 9 with a phosphor layer is obtained.
  • the phosphor layer 3 is cut into a substantially grid shape in plan view using a wide dicing saw (dicing blade) 43 (see FIG. 7B). .
  • a gap 44 is formed in a portion where the phosphor layer 3 is removed.
  • the reflective layer 4 is formed between the gap 44 and a plurality of adjacent optical semiconductor elements 2.
  • transfer by a reflective layer transfer sheet or potting by a varnish of a reflective composition is performed. Thereafter, when the phosphor layer 3 and / or the reflective layer 4 contains a thermosetting resin and is in the B-stage state or the A-stage state, the phosphor layer is further heated by, for example, an oven. 3 and / or the reflective layer 4 is cured (completely cured, C-staged).
  • the optical semiconductor element assembly 10 with the reflective layer and the phosphor layer is cut (separated).
  • the reflective layer 4 is disposed so as to be in contact with both the optical semiconductor element 2 and the phosphor layer 3 on the outer side in the left-right direction and the outer side in the front-rear direction. . For this reason, the light emitted or reflected from the phosphor layer 3 and the side surface 23 of the optical semiconductor element 2 can be reflected upward. Therefore, directivity and front illuminance are good.
  • the reflective layer 4 is in contact with the entire side surface 23 of the optical semiconductor element 2. For this reason, directivity and front illuminance are even better.
  • the phosphor layer 3 has an outer portion 32 disposed on the virtual surface 6 extending to the outside of the optical semiconductor element 2. For this reason, the lower surface of the phosphor layer 3 is wider than the light emitting surface 21 of the optical semiconductor element 2. Therefore, when the phosphor layer 3 is disposed on the light emitting surface 21 of the optical semiconductor element 2 (see, for example, FIG. 7B), the phosphor layer 3 is assumed to be laterally or longitudinally from the light emitting surface 21 of the optical semiconductor element 2. Even if it deviates, generation
  • the outer portion 32 of the phosphor layer 3 can reliably cover the light emitting surface 21 of the optical semiconductor element 2. As a result, the positional accuracy of the phosphor layer 3 with respect to the optical semiconductor element 2 is improved in the left-right direction and the front-rear direction.
  • the two-layered element 1 is a component for manufacturing an optical semiconductor device 8 such as a light-emitting diode device by being mounted on an electrode substrate 7 such as a diode substrate.
  • an optical semiconductor device 8 such as a light-emitting diode device
  • an electrode substrate 7 such as a diode substrate.
  • the element with two layers 1 can be checked for light emitting performance (directivity, illuminance, color, etc.) by connecting to a test device before being mounted on the electrode substrate 7. Therefore, when the optical semiconductor device 8 incompatible with the desired performance is generated, the recovery operation of the electrode substrate 7 incorporated in the optical semiconductor device 8 can be prevented in advance. This is useful as a manufacturing part.
  • the side surface of the outer portion 32 of the phosphor layer 3 is formed so as to be vertical along the vertical direction.
  • the side surface of the portion 32, and thus the inner end surface of the upper portion 4 a of the reflective layer 4, can also be formed in a tapered shape that widens upward.
  • FIG. 8 is also included in the present invention, and has the same effects as the embodiment of FIG. 1B.
  • the phosphor layer 3 is formed so that the upper surface thereof is flush with the upper surface of the reflective layer 4.
  • the upper surface of the phosphor layer 3 is higher than the upper surface of the reflective layer 4.
  • This embodiment also has the same effect as the embodiment of FIG. 1B.
  • the upper surface of the phosphor layer 3 is exposed, but for example, as shown in FIG. 9, the diffusion layer 5 may be disposed on the upper surface of the phosphor layer 3.
  • the embodiment of FIG. 9 is also included in the present invention, and has the same effects as the embodiment of FIG. 6B. From the viewpoint of further improving the directivity and the front illuminance, the embodiment of FIG. 9 is preferable.
  • the diffusion layer 5 is formed so that the upper surface thereof is flush with the upper surface of the reflection layer 4.
  • the diffusion layer 5 is reflected on the upper surface. It may be formed so as to be located above or below the upper surface of the layer 4.
  • the element with two layers 1 includes an optical semiconductor element 2, a phosphor layer 3, and a reflective layer 4.
  • the phosphor layer 3 is disposed on the upper side and the side of the optical semiconductor element 2 so as to cover the entire light emitting surface 21 of the optical semiconductor element 2 and a part of the side surface 23.
  • the phosphor layer 3 integrally includes an inner portion 31 disposed on the upper side of the optical semiconductor element 2 and an outer portion 32 disposed on the outer side of the inner portion 31.
  • the outer portion 32 has a substantially rectangular frame shape in plan view extending in the vertical direction.
  • the outer portion 32 includes an upper portion 32a and a lower portion 32b.
  • the outer portion 32 includes a virtual surface 6 that extends outward in the left-right direction and the front-rear direction of the optical semiconductor element 2 along the light-emitting surface 21 between the upper portion 32 a and the lower portion 32 b.
  • the lower part 32b of the outer part 32 is arranged outside the optical semiconductor element 2 so as to be in contact with and cover the upper part of the side surface 23 of the optical semiconductor element 2. That is, the inner peripheral end surface of the lower portion 32 b is in contact with the upper portion of the side surface 23 of the optical semiconductor element 2.
  • the upper portion 32a is formed so that the lower end thereof is integrally connected to the upper end of the lower portion 32b and is directed upward.
  • the reflection layer 4 is disposed on the outer side in the left-right direction and on the outer side in the front-rear direction with respect to both the optical semiconductor element 2 and the phosphor layer 3.
  • the reflective layer 4 has a substantially rectangular frame shape in plan view extending in the vertical direction.
  • the reflective layer 4 has an upper part 4a and a lower part 4b disposed below the upper part 4a.
  • the upper part 4a is arranged on the outer side in the left-right direction and the outer side in the front-rear direction of the phosphor layer 3, and is in contact with and covers the entire side surface of the phosphor layer 3.
  • the lower portion 4b has an upper end that is integrally continuous with a lower end of the upper portion 4a, and is formed to be wider than the upper portion 4a toward the inner side in the left-right direction and the inner side in the front-rear direction.
  • the lower part 4 b is disposed on the outer side in the left-right direction and the outer side in the front-rear direction of the optical semiconductor element 2, and contacts and covers the lower part of the side surface 23 of the optical semiconductor element 2.
  • the manufacturing method of the element 1 with two layers of 3rd Embodiment is equipped with a temporary fixing sheet preparation process, a temporary fixing process, a fluorescent substance layer formation process, a fluorescent substance layer removal process, a reflective layer formation process, and a cutting process, for example.
  • a temporary fixing sheet 40 is prepared in the same manner as in FIG. 2A.
  • the plurality of optical semiconductor elements 2 are temporarily fixed on the temporary fixing sheet 40 at intervals in the left-right direction and the front-rear direction, as in FIG. 2B. To do.
  • the phosphor layer 3 is disposed on the spacer 45 so as to cover the upper portion of the optical semiconductor element 2.
  • the spacer 45 is disposed on the temporarily fixing sheet 40.
  • a phosphor transfer sheet in which the phosphor layer 3 is disposed on the release sheet is prepared, and then the phosphor is placed on the spacer 45 so that the upper portion of the optical semiconductor element 2 is buried in the phosphor layer 3.
  • the transfer sheet is pressed and laminated, and then the release sheet is released from the phosphor layer 3.
  • the phosphor layer of the phosphor transfer sheet in the third embodiment is preferably harder than the phosphor layer in the B stage state of the phosphor transfer sheet used in the first embodiment.
  • the phosphor layer in the B-stage state with advanced is used. That is, the storage shear elastic force of the phosphor layer of the third embodiment is preferably adjusted to be higher than the storage shear elastic force of the phosphor layer of the first embodiment.
  • FIG. 11C only the upper part of the optical semiconductor element 2 can be covered with the phosphor layer 3, and the phosphor layer 3 is not required to support the temporary fixing sheet 40. The shape can be maintained flat.
  • the entire light emitting surface 21 and the upper part of the side surface 23 of the optical semiconductor element 2 are covered with the phosphor layer 3. That is, the optical semiconductor element assembly 9 with a phosphor layer is obtained.
  • a part of the phosphor layer 3 of the photosemiconductor layer-attached optical semiconductor element assembly 9 is removed in the same manner as in FIG. 2D. Thereby, in the optical semiconductor element assembly 9 with a phosphor layer, a gap 44 is formed in a portion where the phosphor layer 3 is removed.
  • the reflective layer 4 is formed in the gap 44 and the interval 46 between the adjacent optical semiconductor elements 2.
  • a protective sheet 47 is disposed on the upper surface of the optical semiconductor element assembly 9 with a phosphor layer, and then, in a vacuum sealed space 49 such as the inside of the vacuum chamber 48, An optical semiconductor element assembly 9 with a body layer is disposed, and subsequently, the varnish 4a of the reflective composition is disposed on the temporary fixing sheet 40 so as to surround the optical semiconductor element assembly 9 with a phosphor layer, Then, the vacuum state of the vacuum sealed space 49 is released and returned to atmospheric pressure. Thereby, the varnish 4a of the reflective composition flows into the gap 44 and the interval 46 due to the atmospheric pressure, and is filled.
  • the protective sheet 47 is peeled off, and then the varnish 4a of the reflective composition is heated and dried to form the reflective layer 4.
  • the phosphor layer 3 and / or the reflective layer 4 contains a thermosetting resin and is in the B-stage state or the A-stage state
  • the phosphor layer is further heated by, for example, an oven. 3 and / or the reflective layer 4 is cured (completely cured, C-staged).
  • the plurality of optical semiconductor elements 2, the phosphor layer 3, and the reflective layer 4 are laminated on the temporarily fixing sheet 40. That is, the optical semiconductor element assembly 10 with a reflective layer and a phosphor layer is obtained.
  • the optical semiconductor element assembly 10 with the reflective layer and the phosphor layer is cut (individualized) in the same manner as in FIG. 2F.
  • the temporary fixing sheet 40 is peeled from the optical semiconductor element 2 as indicated by a virtual line in FIG. 11G.
  • the element with two layers 1 of the third embodiment also has the same effects as the element 1 with two layers of the first embodiment.
  • the two-layered element 1 of the first embodiment in which the phosphor layer 3 is in contact with the entire side surface 23 of the optical semiconductor element 2 is preferable.
  • the phosphor layer 3 is formed so that the upper surface thereof is flush with the upper surface of the reflective layer 4.
  • the upper surface of the phosphor layer 3 is higher than the upper surface of the reflective layer 4.
  • the diffusion layer 5 may be provided on the phosphor layer 3.
  • Reflective composition B by mixing 39 parts by mass of silicone resin (same as above), 30 parts by mass of glass (same as above), 30 parts by mass of titanium oxide (same as above), and 1 part by mass of nanosilica (same as above) was prepared.
  • the diffusion transparent composition was applied on a polyester film and heated at 90 ° C. for 30 minutes to produce a semi-cured diffusion layer.
  • Examples 1 to 10 and Comparative Examples 1 to 3 As the optical semiconductor element, an LED element having a length in the left-right direction and a length in the front-rear direction (light emitting surface) of 1143 ⁇ m and a length in the vertical direction of 150 ⁇ m was used. Using the above-described fluorescent composition and reflective compositions A and B, according to FIGS. 2A to 2F, FIGS. 7A to 7E, or FIGS. 12 to 13, the shapes and dimensions described in Table 1 are obtained. Optical semiconductor elements with reflective layers and phosphor layers of Examples and Comparative Examples were manufactured. 7A to 7E except that after preparing the phosphor layer in FIG.
  • a semi-cured diffusion layer was disposed on the lower surface of the phosphor layer and the diffusion layer was also cured in FIG. 7D.
  • an optical semiconductor element with a reflective layer and a phosphor layer was produced.
  • an optical semiconductor element with a phosphor layer was manufactured without providing a reflective layer.
  • the thicknesses of the phosphor layer and the diffusion layer were measured with a measuring meter (linear gauge, manufactured by Citizen).
  • the diffusion transparent composition was applied and cured to prepare a diffusion layer having a thickness of 100 ⁇ m for measurement.
  • the light transmittance (%) at a wavelength of 450 nm was measured using a spectrophotometer (U-4100, manufactured by Hitachi High-Tech).
  • the light transmittance of the reflective layers A and B was 20% or less, and the light transmittance of the diffusion layer was 60% or more.
  • the chromaticity (CIE, y) was measured with an instantaneous multi-photometry system (“MCPD-9800”, manufactured by Otsuka Electronics Co., Ltd.) under the following measurement conditions.
  • the optical semiconductor element with a reflective layer and a phosphor layer of the present invention can be applied to various industrial products, and can be used for optical applications such as a white light semiconductor device.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un élément photo-semi-conducteur doté d'une couche de réflexion et d'une couche de phosphore comprenant : un élément photo-semi-conducteur présentant une surface électroluminescente et une surface antagoniste disposée face à la surface électroluminescente avec un intervalle entre ces dernières dans la direction verticale ; une couche de phosphore qui recouvre au moins la surface électroluminescente ; et une couche de réflexion disposée, à la fois pour l'élément photo-semi-conducteur et la couche de phosphore, sur le côté externe orthogonal qui est orthogonal à la direction verticale. La couche de phosphore présente une partie intérieure disposée sur le côté supérieur de l'élément photo-semi-conducteur et une partie extérieure disposée sur, ou de manière à inclure un plan virtuel s'étendant le long de la surface électroluminescente vers l'extérieur de l'élément photo-semi-conducteur.
PCT/JP2017/010725 2016-07-07 2017-03-16 Élément photo-semi-conducteur doté d'une couche de réflexion et d'une couche de phosphore WO2018008197A1 (fr)

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JP2016134688 2016-07-07
JP2016-134688 2016-07-07
JP2017-046042 2017-03-10
JP2017046042A JP2018014480A (ja) 2016-07-07 2017-03-10 反射層および蛍光体層付光半導体素子

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Publication number Priority date Publication date Assignee Title
WO2018217808A1 (fr) 2017-05-22 2018-11-29 Insmed Incorporated Dérivés clivables de lipo-glycopeptides et leurs utilisations
JP2020025063A (ja) * 2018-08-06 2020-02-13 日亜化学工業株式会社 発光装置及びその製造方法
US11137123B2 (en) 2018-08-06 2021-10-05 Nichia Corporation Method of manufacturing light emitting device

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JP2012227470A (ja) * 2011-04-22 2012-11-15 Citizen Holdings Co Ltd 半導体発光装置及びその製造方法
JP2013073983A (ja) * 2011-09-27 2013-04-22 Toshiba Lighting & Technology Corp 発光装置及び照明装置
JP2013251417A (ja) * 2012-06-01 2013-12-12 Nichia Chem Ind Ltd 発光装置
WO2014091914A1 (fr) * 2012-12-10 2014-06-19 シチズンホールディングス株式会社 Dispositif à del et procédé de fabrication associé
US20140217436A1 (en) * 2013-02-05 2014-08-07 Cree, Inc. Submount-free light emitting diode (led) components and methods of fabricating same
WO2014122881A1 (fr) * 2013-02-07 2014-08-14 パナソニック株式会社 Dispositif électroluminescent
JP2017050321A (ja) * 2015-08-31 2017-03-09 日亜化学工業株式会社 発光装置の製造方法

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JP2012227470A (ja) * 2011-04-22 2012-11-15 Citizen Holdings Co Ltd 半導体発光装置及びその製造方法
JP2013073983A (ja) * 2011-09-27 2013-04-22 Toshiba Lighting & Technology Corp 発光装置及び照明装置
JP2013251417A (ja) * 2012-06-01 2013-12-12 Nichia Chem Ind Ltd 発光装置
WO2014091914A1 (fr) * 2012-12-10 2014-06-19 シチズンホールディングス株式会社 Dispositif à del et procédé de fabrication associé
US20140217436A1 (en) * 2013-02-05 2014-08-07 Cree, Inc. Submount-free light emitting diode (led) components and methods of fabricating same
WO2014122881A1 (fr) * 2013-02-07 2014-08-14 パナソニック株式会社 Dispositif électroluminescent
JP2017050321A (ja) * 2015-08-31 2017-03-09 日亜化学工業株式会社 発光装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018217808A1 (fr) 2017-05-22 2018-11-29 Insmed Incorporated Dérivés clivables de lipo-glycopeptides et leurs utilisations
JP2020025063A (ja) * 2018-08-06 2020-02-13 日亜化学工業株式会社 発光装置及びその製造方法
US11137123B2 (en) 2018-08-06 2021-10-05 Nichia Corporation Method of manufacturing light emitting device
JP6989782B2 (ja) 2018-08-06 2022-02-03 日亜化学工業株式会社 発光装置及びその製造方法

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