TWI727849B - β-Ga2O3系單晶膜的成長方法及結晶積層構造體 - Google Patents

β-Ga2O3系單晶膜的成長方法及結晶積層構造體 Download PDF

Info

Publication number
TWI727849B
TWI727849B TW109123514A TW109123514A TWI727849B TW I727849 B TWI727849 B TW I727849B TW 109123514 A TW109123514 A TW 109123514A TW 109123514 A TW109123514 A TW 109123514A TW I727849 B TWI727849 B TW I727849B
Authority
TW
Taiwan
Prior art keywords
gas
single crystal
film
crystal
crystal film
Prior art date
Application number
TW109123514A
Other languages
English (en)
Chinese (zh)
Other versions
TW202102698A (zh
Inventor
後藤健
佐佐木公平
纐纈明伯
熊谷義直
村上尚
Original Assignee
日商田村製作所股份有限公司
國立大學法人東京農工大學
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商田村製作所股份有限公司, 國立大學法人東京農工大學 filed Critical 日商田村製作所股份有限公司
Publication of TW202102698A publication Critical patent/TW202102698A/zh
Application granted granted Critical
Publication of TWI727849B publication Critical patent/TWI727849B/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02414—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02634—Homoepitaxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Electrochemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW109123514A 2013-09-30 2014-09-16 β-Ga2O3系單晶膜的成長方法及結晶積層構造體 TWI727849B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013-203198 2013-09-30
JP2013203198 2013-09-30
JP2014088589A JP5984069B2 (ja) 2013-09-30 2014-04-22 β−Ｇａ２Ｏ３系単結晶膜の成長方法、及び結晶積層構造体
JP2014-088589 2014-04-22

Publications (2)

Publication Number Publication Date
TW202102698A TW202102698A (zh) 2021-01-16
TWI727849B true TWI727849B (zh) 2021-05-11

Family

ID=52743145

Family Applications (2)

Application Number Title Priority Date Filing Date
TW109123514A TWI727849B (zh) 2013-09-30 2014-09-16 β-Ga2O3系單晶膜的成長方法及結晶積層構造體
TW103131951A TWI702300B (zh) 2013-09-30 2014-09-16 β－ＧａＯ系單晶膜的成長方法及結晶積層構造體

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW103131951A TWI702300B (zh) 2013-09-30 2014-09-16 β－ＧａＯ系單晶膜的成長方法及結晶積層構造體

Country Status (6)

Country Link
US (2) US20160265137A1 (enExample)
EP (1) EP3054037B1 (enExample)
JP (1) JP5984069B2 (enExample)
CN (2) CN105992841B (enExample)
TW (2) TWI727849B (enExample)
WO (1) WO2015046006A1 (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5984069B2 (ja) 2013-09-30 2016-09-06 株式会社タムラ製作所 β−Ｇａ２Ｏ３系単結晶膜の成長方法、及び結晶積層構造体
JP6253150B2 (ja) 2014-05-09 2017-12-27 株式会社タムラ製作所 エピタキシャルウエハ及びその製造方法
JP6758569B2 (ja) 2015-03-20 2020-09-23 株式会社タムラ製作所 高耐圧ショットキーバリアダイオード
JP6376600B2 (ja) * 2015-03-20 2018-08-22 株式会社タムラ製作所 結晶積層構造体の製造方法
JP6535204B2 (ja) * 2015-04-23 2019-06-26 株式会社タムラ製作所 Ｇａ２Ｏ３系結晶膜の形成方法
JP6436538B2 (ja) * 2015-06-16 2018-12-12 国立研究開発法人物質・材料研究機構 ε−Ｇａ２Ｏ３単結晶、ε−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子
JP6744523B2 (ja) * 2015-12-16 2020-08-19 株式会社タムラ製作所 半導体基板、並びにエピタキシャルウエハ及びその製造方法
JP6705962B2 (ja) * 2016-06-03 2020-06-03 株式会社タムラ製作所 Ｇａ２Ｏ３系結晶膜の成長方法及び結晶積層構造体
JP6951715B2 (ja) * 2016-09-15 2021-10-20 株式会社Flosfia 半導体膜の製造方法及び半導体膜並びにドーピング用錯化合物及びドーピング方法
US10593544B2 (en) 2016-10-14 2020-03-17 Case Westen Reverse University Method for forming a thin film comprising an ultrawide bandgap oxide semiconductor
JP7008293B2 (ja) * 2017-04-27 2022-01-25 国立研究開発法人情報通信研究機構 Ｇａ２Ｏ３系半導体素子
CN107587190A (zh) * 2017-08-14 2018-01-16 南京大学 一种制备GaN衬底材料的方法
CN107574479A (zh) * 2017-08-14 2018-01-12 南京大学 一种多功能氢化物气相外延生长系统及应用
JP7166522B2 (ja) * 2017-08-21 2022-11-08 株式会社Flosfia 結晶膜の製造方法
CN109423690B (zh) * 2017-08-21 2022-09-16 株式会社Flosfia 用于制造结晶膜的方法
CN114836833B (zh) * 2017-08-21 2024-12-06 株式会社Flosfia 用于制造结晶膜的方法
CN107983291A (zh) * 2017-10-28 2018-05-04 株洲冶炼集团股份有限公司 一种制备无水氯化镓的装置及其方法
CN108987257B (zh) * 2018-07-12 2021-03-30 南京南大光电工程研究院有限公司 利用卤化物气相外延法在Si衬底上生长Ga2O3薄膜的方法
CN109767990A (zh) * 2018-12-27 2019-05-17 山东大学 一种氧化镓表面载流子浓度调控的方法
KR102129390B1 (ko) * 2019-05-24 2020-07-02 한국세라믹기술원 HVPE 성장법을 이용하여 성장한 고품질 β-Ga2O3 박막 제조 방법
CN114302982B (zh) 2019-08-27 2024-10-29 信越化学工业株式会社 层叠结构体及层叠结构体的制造方法
JP6842128B2 (ja) * 2019-09-26 2021-03-17 国立研究開発法人物質・材料研究機構 α−Ｇａ２Ｏ３単結晶の製造装置
CN110616456B (zh) * 2019-10-23 2021-05-04 南京大学 一种高质量κ相氧化镓外延薄膜的制备方法
CN110911270B (zh) * 2019-12-11 2022-03-25 吉林大学 一种高质量氧化镓薄膜及其同质外延生长方法
JP7580708B2 (ja) 2020-04-14 2024-11-12 株式会社ノベルクリスタルテクノロジー 半導体膜及びその製造方法
CN111613525A (zh) * 2020-06-03 2020-09-01 西安电子科技大学 一种基于硅衬底上二维β-Ga2O3的制备方法
JP7672604B2 (ja) * 2020-09-15 2025-05-08 株式会社ノベルクリスタルテクノロジー β－Ｇａ２Ｏ３系単結晶膜の製造方法
TR202019031A2 (tr) * 2020-11-25 2021-02-22 Univ Yildiz Teknik Yüksek kalitede hetero epitaksiyel monoklinik galyum oksit kristali büyütme metodu
CN113451435A (zh) * 2021-06-30 2021-09-28 南方科技大学 一种单晶氧化镓基日盲紫外光电探测器及其制备方法与应用
CN117941041A (zh) * 2021-09-03 2024-04-26 三菱电机株式会社 晶体层叠构造体、半导体装置及晶体层叠构造体的制造方法
KR102546042B1 (ko) * 2021-12-22 2023-06-22 주식회사루미지엔테크 HVPE법에 따른 Ga2O3 결정막 증착방법, 증착장치 및 이를 사용한 Ga2O3 결정막 증착 기판
CN114059173B (zh) * 2022-01-17 2022-04-01 浙江大学杭州国际科创中心 一种制备氧化镓料棒的装置及方法
CN114823287B (zh) * 2022-04-29 2024-10-18 杭州富加镓业科技有限公司 一种在非故意掺杂衬底上制备同质外延氧化镓薄膜的方法及分子束外延设备
JP2024053416A (ja) * 2022-10-03 2024-04-15 株式会社ノベルクリスタルテクノロジー エピタキシャルウエハ及びその製造方法
CN116259527A (zh) * 2022-11-23 2023-06-13 中国电子科技集团公司第四十六研究所 一种精确控制n型氧化镓外延膜中Si含量的方法
CN116024545B (zh) * 2023-01-12 2025-09-09 中国科学院苏州纳米技术与纳米仿生研究所 一种单晶β-氧化镓纳米片的制备方法
WO2024236510A1 (en) * 2023-05-16 2024-11-21 Kyma Technologies, Inc. Method and apparatus for suppression of defects during gallium oxide epitaxy

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1071068A (en) * 1975-03-19 1980-02-05 Guy-Michel Jacob Method of manufacturing single crystals by growth from the vapour phase
JP4630986B2 (ja) * 2003-02-24 2011-02-09 学校法人早稲田大学 β−Ｇａ２Ｏ３系単結晶成長方法
CA2517024C (en) 2003-02-24 2009-12-01 Waseda University .beta.-ga2o3 single crystal growing method, thin-film single crystal growing method, ga2o3 light-emitting device, and its manufacturing method
JP4565062B2 (ja) 2003-03-12 2010-10-20 学校法人早稲田大学 薄膜単結晶の成長方法
JP4588340B2 (ja) * 2003-03-20 2010-12-01 パナソニック株式会社 Ｉｉｉ族窒化物基板の製造方法
US7176115B2 (en) 2003-03-20 2007-02-13 Matsushita Electric Industrial Co., Ltd. Method of manufacturing Group III nitride substrate and semiconductor device
JP2005235961A (ja) * 2004-02-18 2005-09-02 Univ Waseda Ｇａ２Ｏ３系単結晶の導電率制御方法
US7303632B2 (en) * 2004-05-26 2007-12-04 Cree, Inc. Vapor assisted growth of gallium nitride
GB2436398B (en) * 2006-03-23 2011-08-24 Univ Bath Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials
JP5311765B2 (ja) 2006-09-15 2013-10-09 住友化学株式会社 半導体エピタキシャル結晶基板およびその製造方法
JP2011142402A (ja) * 2010-01-05 2011-07-21 Toshiba Corp 出力回路
EP2570523B1 (en) * 2010-05-12 2017-05-03 National University Corporation Tokyo University Of Agriculture and Technology Method for producing gallium trichloride gas and method for producing nitride semiconductor crystal
US9437689B2 (en) 2011-09-08 2016-09-06 Tamura Corporation Ga2O3 semiconductor element
JP5612216B2 (ja) * 2011-09-08 2014-10-22 株式会社タムラ製作所 結晶積層構造体及びその製造方法
JP2013056803A (ja) 2011-09-08 2013-03-28 Tamura Seisakusho Co Ltd β−Ｇａ２Ｏ３系単結晶膜の製造方法
EP2765610B1 (en) * 2011-09-08 2018-12-26 Tamura Corporation Ga2o3 semiconductor element
WO2013080972A1 (ja) * 2011-11-29 2013-06-06 株式会社タムラ製作所 Ｇａ2Ｏ3系結晶膜の製造方法
JP5984069B2 (ja) 2013-09-30 2016-09-06 株式会社タムラ製作所 β−Ｇａ２Ｏ３系単結晶膜の成長方法、及び結晶積層構造体
JP5892495B2 (ja) * 2013-12-24 2016-03-23 株式会社タムラ製作所 Ｇａ２Ｏ３系結晶膜の成膜方法、及び結晶積層構造体
JP6253150B2 (ja) * 2014-05-09 2017-12-27 株式会社タムラ製作所 エピタキシャルウエハ及びその製造方法

Also Published As

Publication number Publication date
CN105992841B (zh) 2021-10-22
JP5984069B2 (ja) 2016-09-06
EP3054037A4 (en) 2017-06-21
EP3054037A1 (en) 2016-08-10
CN113832544B (zh) 2024-06-14
US11982016B2 (en) 2024-05-14
EP3054037B1 (en) 2025-08-27
JP2015091740A (ja) 2015-05-14
TW201522680A (zh) 2015-06-16
CN105992841A (zh) 2016-10-05
TW202102698A (zh) 2021-01-16
US20210404086A1 (en) 2021-12-30
TWI702300B (zh) 2020-08-21
US20160265137A1 (en) 2016-09-15
CN113832544A (zh) 2021-12-24
WO2015046006A1 (ja) 2015-04-02

Similar Documents

Publication Publication Date Title
TWI727849B (zh) β-Ga2O3系單晶膜的成長方法及結晶積層構造體
US11047067B2 (en) Crystal laminate structure
CN107534062B (zh) 高耐压肖特基势垒二极管
JP5821164B2 (ja) ＧａＮ基板および発光デバイス
EP3396030B1 (en) Semiconductor substrate, and epitaxial wafer and method for producing same
JP6875708B2 (ja) 結晶積層構造体、及びそれを製造する方法
CN106471163B (zh) 半导体衬底、外延片及其制造方法
EP3929336A1 (en) Gan crystal and substrate