CN105992841B - β-Ga2O3系单晶膜的生长方法和晶体层叠结构体 - Google Patents

β-Ga2O3系单晶膜的生长方法和晶体层叠结构体 Download PDF

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CN105992841B
CN105992841B CN201480053760.7A CN201480053760A CN105992841B CN 105992841 B CN105992841 B CN 105992841B CN 201480053760 A CN201480053760 A CN 201480053760A CN 105992841 B CN105992841 B CN 105992841B
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single crystal
gas
crystal film
beta
film
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CN105992841A (zh
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后藤健
佐佐木公平
绞缬明伯
熊谷义直
村上尚
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Tamura Corp
Tokyo University of Agriculture and Technology NUC
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Tokyo University of Agriculture and Technology NUC
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CN201480053760.7A 2013-09-30 2014-09-18 β-Ga2O3系单晶膜的生长方法和晶体层叠结构体 Active CN105992841B (zh)

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JP2013-203198 2013-09-30
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JP2014088589A JP5984069B2 (ja) 2013-09-30 2014-04-22 β−Ｇａ２Ｏ３系単結晶膜の成長方法、及び結晶積層構造体
JP2014-088589 2014-04-22
PCT/JP2014/074659 WO2015046006A1 (ja) 2013-09-30 2014-09-18 β－Ｇａ２Ｏ３系単結晶膜の成長方法、及び結晶積層構造体

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CN116259527A (zh) * 2022-11-23 2023-06-13 中国电子科技集团公司第四十六研究所 一种精确控制n型氧化镓外延膜中Si含量的方法
CN116024545B (zh) * 2023-01-12 2025-09-09 中国科学院苏州纳米技术与纳米仿生研究所 一种单晶β-氧化镓纳米片的制备方法
WO2024236510A1 (en) * 2023-05-16 2024-11-21 Kyma Technologies, Inc. Method and apparatus for suppression of defects during gallium oxide epitaxy

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