TWI714741B - 基板處理裝置 - Google Patents

基板處理裝置 Download PDF

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TWI714741B
TWI714741B TW106109624A TW106109624A TWI714741B TW I714741 B TWI714741 B TW I714741B TW 106109624 A TW106109624 A TW 106109624A TW 106109624 A TW106109624 A TW 106109624A TW I714741 B TWI714741 B TW I714741B
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partition plate
inner peripheral
substrate processing
peripheral side
protruding
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似鳥弘彌
小池悟
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日商東京威力科創股份有限公司
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Abstract

本發明包含有基板保持具、處理容器、突出部及氣體供給機構，該基板保持具可將複數之基板於鉛直方向留有間隔而裝載成多段，並具有將裝載該複數之基板的區域於鉛直方向分隔之複數的分隔板；該處理容器可收納該基板保持具；該突出部延伸成從該處理容器內之與該分隔板的外周側面對向之內周壁面朝該分隔板之外周側面突出至內側，並於形成於突出之前端的內周側面與該分隔板的外周側面之間形成間隙；該氣體供給機構可將惰性氣體供至形成於該突出部之該內周側面與該分隔板的外周側面之間的該間隙而形成壓力高於周圍之正壓部。

Description

基板處理裝置
本發明係有關於一種基板處理裝置。
迄今，已知有一種半導體裝置之製造方法，其包含有下列製程(1)將配置於對基板處理面垂直之方向的複數片基板搬入至設在設成以加熱裝置包圍外周之反應管的內部之處理室；(2)將氣體導入至反應管之內部亦是於在處理基板之區域的反應管側面設成至少到達加熱裝置之外側的氣體導入管，從以於對基板處理面垂直之方向橫跨至少2片以上的基板之大小設成縫隙狀之噴出口將氣體噴出至處理室，來處理基板。
在此半導體裝置之製造方法中，在基板處理製程，將氣體導入至設於氣體導入管內且於對基板處理面垂直之方向以區劃壁區劃之複數的氣體導入區劃部，從分別設於複數之氣體導入區劃部的噴出口將氣體噴出至處理室，於複數之氣體導入區劃部各形成側流，使進入基板間之氣體量均一，以使複數片基板之面內、面間均一性提高。
[發明欲解決之問題] 然而，在上述半導體裝置之製造方法的結構中，即使氣體導入區劃部以區劃壁區劃，在區劃壁與基板之間，於垂直方向仍有未區劃之間隙，而形成氣體可透過該間隙上下往來之狀態，故有不易於氣體導入區劃部內形成具有均一之氣體量的側流之問題。
又，在處理室內，易於上部與下部產生粒子，由於該種粒子亦可在上述間隙上下自由移動，故不易有效地抑制粒子散佈在基板上。
是故，本發明提供一種可抑制氣體及粒子在區劃區域間之往來而使面間均一性及面內均一性良好並且可抑制粒子散佈在基板上之基板處理裝置。 [用以解決問題之手段]
本發明一態樣之基板處理裝置包含有基板保持具、處理容器、突出部及氣體供給機構，該基板保持具可將複數之基板於鉛直方向留有間隔而裝載成多段，並具有將裝載該複數之基板的區域於鉛直方向分隔之複數的分隔板；該處理容器可收納該基板保持具；該突出部延伸成從該處理容器內之與該分隔板的外周側面對向之內周壁面朝該分隔板之外周側面突出至內側，並於形成於突出之前端的內周側面與該分隔板的外周側面之間形成間隙；該氣體供給機構可將惰性氣體供至形成於該突出部之該內周側面與該分隔板的外周側面之間的該間隙而形成壓力高於周圍之正壓部。
[用以實施發明之形態] 以下，參照圖式，進行用以實施本發明之形態的說明。在下述詳細說明中，為可充分理解本揭示，而給予許多具體之細節。然而，在無此種詳細之說明下該業者可作成本揭示是理所當然之事項。在其他例中，為避免不易了解各種實施形態，並未詳細顯示眾所皆知之方法、程序、系統及構成要件。 [第1實施形態]
圖1係顯示本發明第1實施形態之基板處理裝置的一例之全體結構的圖。參照圖1，基板處理裝置包含有複數片基板(以下為晶圓W)於上下方向以預定間隔積層收納於內部之處理容器4、覆蓋處理容器4之側面及上面的加熱裝置48。
處理容器4由呈有蓋之圓筒形狀的外管6、呈有蓋之圓筒形狀並於外管6之內側配置成同心狀的內管8構成。外管6及內管8由具有耐熱性之材料、例如石英形成。又，外管6及內管8從其下端部以由例如不鏽鋼或鋁等金屬製作之歧管10保持。又，歧管10固定於底板12。
由例如不鏽鋼或鋁等金屬製作之圓盤狀蓋部14藉由O型環等密封構件16氣密地安裝於歧管10之下端部的開口部。又，以例如磁性流體密封件18形成氣密且可旋轉之旋轉軸20插通蓋部14之中心部。此旋轉軸20之下端連接於旋轉設備22。旋轉軸20之上端固定有由例如金屬構成之台24。
於台24上設有例如石英製之保溫筒26。又，於保溫筒26上載置例如石英製之晶舟60作為基板保持具。在晶舟60，例如50~150片之晶圓W以預定間隔、例如10mm左右間隔之間距於鉛直方向裝載。晶舟60具有例如3~4根支柱61。再者，於形成於支柱61之內周面且於水平方向開鑿之溝(圖中未示)的底面上載置晶圓W。晶舟60、保溫筒26、台24及蓋部14以例如晶舟升降機亦即升降設備30在處理容器4內成一體地承載、卸載。
晶舟60具有將所裝載之晶圓W於鉛直方向分隔之複數片分隔板62。分隔板62係為了於晶舟60形成於鉛直方向分隔之複數的區域，並於所分隔之各區域形成側流來供給處理氣體，對晶圓W進行均一之處理而設。分隔板62以厚度比晶圓W厚之板狀構件構成。由於晶圓W基本上呈圓盤狀之形狀，內管8亦呈圓筒形狀，故分隔板亦以呈圓盤形狀之圓板構件構成。
分隔板62由於具有鉛直方向之區劃壁的功能，故構造成外周端露出至晶圓W及支撐晶圓W之支柱61的外側，並與晶圓W平行地設成水平。此種直徑大於支柱61且厚度亦比晶圓W厚之分隔板62設於複數處，而將所裝載之複數片晶圓W於鉛直方向分割成複數之區域而分隔。
如圖1所示，分隔板62宜至少設於上端及下端。細節後述，但由於內管8內部之下部因恢復常壓時之氣體揚起等而易產生粒子，再者，粒子會從上部落下來，故仍易產生粒子。是故，從防止粒子之侵入的觀點，分隔板62宜設於所裝載之最上段晶圓W的上方、最下段晶圓W之下方而至少包圍所裝載之晶圓W的上端及下端。
於內管8的內周壁面80之與分隔板62對向的位置設朝分隔板62之外周側面突出至內側的突出部81。突出部81具有大約與分隔板62之厚度相同的程度之厚度，且呈朝分隔板62之外周側面突出的形狀。是故，分隔板62之外周側面與突出部81之內周側面對向，並於對向空間形成狹小之間隙70。細節後述，間隙70被供給惰性氣體，與周圍相較為正壓，而形成正壓部。藉此，可分隔以分隔板62及突出部81形成之區域，而於區域內形成側流。此外，若分隔板62呈圓盤形狀，突出部81之內周面亦呈圓形，正壓部形成為圓環狀之環狀正壓部。
於內管8之內周壁面80的諸突出部81之間的區域設排氣口85。藉此，可進行以分隔板62分隔之區域內的處理氣體之供給與個別排氣，而易形成側流。
此外，與該等分隔板62相關之結構的細節後述，就其他構成要件作說明。
於歧管10之下部設有在一端部氣密地貫穿歧管10並沿著內管8之內周面往上方彎曲之氣體噴嘴34。氣體噴嘴34之另一端部藉由預定配管連接於圖中未示之氣體供給源。又，於配管設有例如質量流量控制器等流量控制裝置及開關閥(圖中未示)，藉此，可控制從氣體噴嘴34供至處理容器4內之氣體的供給開始、供給停止、及流量等。此外，在圖1，記載了1根氣體噴嘴34，亦可按使用之氣體類別設複數根氣體噴嘴34。舉例而言，以基板處理裝置於晶圓W形成氧化矽膜時，可設含矽氣體用氣體噴嘴34、氧化氣體用氣體噴嘴34及清除氣體用氣體噴嘴34。
於歧管10之上部設有氣體排氣口36，於氣體排氣口36連結有排氣系統38。排氣系統38具有連接於氣體排氣口36之排氣通路40、依序連接於排氣通路40之途中的壓力調整閥42及真空泵44。藉排氣系統38，可將供至處理容器4之氣體排氣，同時，調整處理容器4內之壓力。
此外，亦可不設歧管10，而以例如石英製作處理容器4全體。
加熱裝置48具有呈有蓋之圓筒體狀的隔熱體50。隔熱體50以例如熱傳導性低且無定形之二氧化矽及氧化鋁的混合物形成。隔熱體50之厚度通常為約30mm至約40mm。又，隔熱體50之內徑比處理容器4之外徑大預定長度，藉此，可於隔熱體50之內面與處理容器4的外面之間形成預定空間。再者，由例如不鏽鋼構成之保護蓋51於隔熱體50之外周面安裝成覆蓋隔熱體50全體。
又，加熱器素線52於隔熱體50之內面捲繞成線圈狀，全體構成以圓筒狀包圍處理容器4之加熱器。
接著，就與分隔板62及突出部81相關之結構，更詳細地說明。
圖2係將本發明第1實施形態之基板處理裝置的晶舟及內管之對向面附近的結構放大顯示之截面圖。此外，在圖2中，晶舟60之分隔板62與內管8之突出部81的位置關係雖顯示為與圖1左右相反，但從圖1之背面側觀看時，即為此種結構，故並不與圖1矛盾。
如圖2所示，於晶舟60之裝載有晶圓W的區域之上端的上方、下端的下方設分隔板62，並於該等之間再設2片分隔板62，複數片晶圓W於鉛直方向分割成3個區域100。晶圓W由於載置多至例如50~100片之晶圓W，故於以分隔板62分隔之複數的區域100內分別保持有複數片晶圓W。
分隔板62分別具有大於晶圓W及支柱61之直徑，而突出至外側，分隔板62之外周側面63設成在晶圓W及支柱61之外側。分隔板62之厚度構造成遠比將數片晶圓W加在一起之厚度厚。
於內管8之內周壁面80中與晶舟60之分隔板62對向的區域設有朝分隔板62之外周側面63突出延伸至內側的突出部81。突出部81延伸至分隔板62之外周側面63附近，而於突出部81之內周側面82與分隔板62的外周側面63之間形成有間隙70。
於晶舟60之支柱61及分隔板62的內部設有氣體供給管路90。氣體供給管路90係用以將惰性氣體供至間隙70之氣體供給機構。氣體供給管路90具有貫穿支柱61之內部而設的合流管路91、貫穿各分隔板62之內部而設的分歧管路92。從合流管理91供給之惰性氣體分歧至各分歧管路82，而將惰性氣體供至形成於分隔板62之外周側面63與突出部81之內周側面82之間的間隙70。藉此，可使間隙70形成壓力高於周圍氣體環境之正壓，而可防止以分隔板62分隔之諸區域100的處理氣體之往來。
此外，如圖2所示，於內管8之突出部81設有沿著突出部81之上面更突出至內側的突出構造部83，於分隔板62設有沿著分隔板之下面更突出至外側的突出構造部64。突出構造部64、83係設成包圍間隙70之曲徑構造部。亦即，突出構造部64、83相互協同構成曲徑式密封。藉此，可確實地密封以分隔板62分隔之複數區域100。
此外，設曲徑構造部並非必要，只要僅對間隙70之惰性氣體的供給足夠，未必需設突出構造部64、83，亦可將突出部81之內周側面82及分隔板62之外周側面63構成平坦面。
又，反之，欲更提高密封性時，亦可使突出構造部64、83之數增加。
此外，藉由氣體供給管路90供至間隙70之惰性氣體只要為不與處理氣體反應之氣體，可使用各種氣體，舉例而言，亦可使用氮或氬。
又，宜於內管8之內周壁面80依各區域100設排氣口85。亦即，宜於突出部81間之內周壁面80形成排氣口85。藉此，於已將處理氣體供至以分隔板62分隔之各區域100時，可於各區域100進行處理氣體之排氣，而易在各區域100內形成側流。藉側流之形成，在各區域100內可形成一方向(水平方向)之層流，而可於晶圓W之中心區域、外周區域形成無大幅差異之均一流。只要可進行此種處理氣體之供給，便可將晶圓W之基板處理的晶圓間(縱方向)及晶圓面內(水平方向)之均一性兩者皆提高。
又，分隔板62之數可按用途，適宜訂定，宜於配置於最上段之晶圓W的上方設1片分隔板62，於配置於最下段之晶圓W的下方設1片分隔板62。由於在內管8之下部，產生許多從真空恢復為常壓之際揚起的粒子，在上部，產生許多從天花板落下之粒子，故結構宜在上端及下端防止該等粒子之侵入。
又，即使粒子侵入至區域100時，由於間隙70為正壓，而構成環狀正壓部，故可抑制粒子上下間之往來。
如此，根據本發明之第1實施形態的基板處理裝置，處理氣體及粒子兩者皆被抑制往來以分隔板62分隔之諸區域100，而可使區域100之間完全斷開，而可進行面間及面內均一性高之基板處理。
此外，在圖2中，分隔板62之直徑從上段往下段漸大，突出部81亦隨此構造成突出量從上段往下段縮小。此係因結構為搬出晶舟60時，突出構造部64不接觸下段的突出部83之故。亦即，當令分隔板62皆為相同之直徑，而如圖2構成時，於搬出晶舟60之際，分隔板62之突出構造部64鈎住在下方之突出部81的突出構造部83，晶舟60不會脫離。
是故，以此種逐漸擴展之結構，構成分隔板62。 [第2實施形態]
圖3係顯示本發明第2實施形態之基板處理裝置的一例之截面圖。如圖3所示，在本發明第2實施形態之基板處理裝置中，不將氣體供給管路90a設於晶舟60之內部，而是設於內管8。如此，氣體供給管路90亦可不設於晶舟60，而設於內管8。
如圖3所示，分歧管92a設成貫穿突出部81之內部。另一方面，合流管路91a設於內管8之外側。如此，亦可於內管8之外部設合流管路91a，僅使分歧管路92a貫穿突出部81之內部而設。又，若使合流管路91a亦貫穿內管8之內部而設為較佳，亦可如此構成。
如此，只要可將惰性氣體供至間隙70，氣體供給管路90、90a可設於各種位置。在第1及第2實施形態中，舉了將氣體供給管路90、90a設於晶舟60及內管8之例來說明，但不限於該等，只要可將惰性氣體供至間隙70，使間隙70為正壓，可將專用氣體供給管路90、90a設於各種位置。
此外，在第2實施形態中，由於其他之構成要件與第1實施形態相同，故對對應之構成要件附上同一參照符號，並且，省略其說明。
根據第2實施形態之基板處理裝置，可將氣體供給管路90a固定設於無移動之內管8內，而可進行穩定之氣體供給。 [第3實施形態]
圖4係顯示本發明第3實施形態之基板處理裝置的一例之截面圖。如圖4所示，本發明第3實施形態之基板處理裝置在構成曲徑構造部之突出構造部83a上下皆從內管8之突出部81a的內周側面82a突出且分隔板62a之外周側面63a為平坦面這點，與第1實施形態之基板處理裝置不同。
如此，亦可僅於內管8側之突出部81a設曲徑構造部。此時，在上下亦可構成諸對向面之間隔狹小的部分，而構成曲徑式密封，而可確保上下之諸區域100的氣密性。
藉採用此結構，可使晶舟60a之複數的分隔板62a之直徑皆相同，並且可使其外周側面63a皆為平坦面，而可使晶舟60a之構造簡單化。
此外，若氣體供給管路90亦構造成諸如第2實施形態之設於內管8側，便可使晶舟60a更簡單化。
如此，根據第3實施形態之基板處理裝置，可一面使晶舟60a之結構簡單化，一面提高基板處理之面間及面內均一性。
此外，由於其他之構成要件與第1實施形態之基板處理裝置相同，故對對應之構成要件附上同一參照符號，並且省略其說明。 [第4實施形態]
圖5係顯示本發明第4實施形態之基板處理裝置的一例之截面圖。如圖5所示，本發明第4實施形態之基板處理裝置在構成曲徑構造部之突出構造部64b上下皆從晶舟60b之分隔板62b的外周側面63b突出且內管8之突出部81b的內周側面82b為平坦面這點，與第1實施形態之基板處理裝置不同。
如此，亦可僅於晶舟60b之分隔板62b設曲徑構造部。此時，在上下亦可構成諸對向面之間隔狹小的部分，而構成曲徑式密封，而可確保上下之諸區域100的氣密性。
又，藉採用此種結構，可使內管8之複數的突出部81b之突出量皆相同，並且可使其內周側面82b皆為平坦面，而可使內管8之內周壁面80b的構造簡單化。
又，晶舟60b亦是分隔板62b之外周側面63b的構造雖複雜化，但分隔板62b之直徑可皆相同，而可易處理。
此外，若氣體供給管路90亦構造成諸如第2實施形態之設於內管8側，便可使晶舟60b更簡單化。
如此，根據第4實施形態之基板處理裝置，可使內管8之突出部81b的結構簡單化，並且可提高基板處理之面間及面內均一性。
此外，由於其他之構成要件與第1實施形態之基板處理裝置相同，故對對應之構成要件附上同一參照符號，並且省略其說明。
如此，根據本發明第1乃至第4實施形態之基板處理裝置，藉設環狀正壓部，可提高以分隔板62、62a、62b分隔之諸區域100的密封性，而抑制往來兩邊之區域100的處理氣體及粒子，使基板處理之面間及面內均一性提高。
此外，第1乃至第4實施形態雖未顯示，但曲徑構造亦可為於分隔板62之外周側面63及突出部81之內周側面82兩者設彼此對向之突出構造的構造。
又，在第1乃至第4實施形態中，顯示了晶圓W為圓形且內管8為圓筒形之例，即使處理對象之基板為多角形時，只要為處理容器之內周側面的突出部之內周側面與基板之外周側面留有一定距離之間隙而對向之構造，亦可適用於該種基板處理裝置。
根據本發明，可對複數之基板進行均一之基板處理。
以上，就本發明之較佳實施形態作了詳細說明，本發明不限於上述實施形態，可在不脫離本發明之範圍下，於上述實施形態添加各種變形及置換。
4‧‧‧處理容器 6‧‧‧外管 8‧‧‧內管 10‧‧‧歧管 12‧‧‧底板 14‧‧‧蓋部 16‧‧‧密封構件 18‧‧‧磁性流體密封件 20‧‧‧旋轉軸 22‧‧‧旋轉設備 24‧‧‧台 26‧‧‧保溫筒 30‧‧‧升降設備 34‧‧‧氣體噴嘴 36‧‧‧排氣口 38‧‧‧排氣系統 40‧‧‧排氣通路 42‧‧‧壓力調整閥 44‧‧‧真空泵 48‧‧‧加熱裝置 50‧‧‧隔熱體 51‧‧‧保護蓋 52‧‧‧加熱器素線 60‧‧‧晶舟 60a‧‧‧晶舟 60b‧‧‧晶舟 61‧‧‧支柱 62‧‧‧分隔板 62a‧‧‧分隔板 62b‧‧‧分隔板 63‧‧‧外周側面 63a‧‧‧外周側面 63b‧‧‧外周側面 64‧‧‧突出構造部 64b‧‧‧突出構造部 70‧‧‧間隙 80‧‧‧內周壁面 81‧‧‧突出部 81a‧‧‧突出部 81b‧‧‧突出部 82‧‧‧內周側面 82a‧‧‧內周側面 82b‧‧‧內周側面 83‧‧‧突出構造部 83a‧‧‧突出構造部 85‧‧‧排氣口 90‧‧‧氣體供給管路 90a‧‧‧氣體供給管路 91‧‧‧合流管路 91a‧‧‧合流管路 92‧‧‧分歧管路 92a‧‧‧分歧管路 100‧‧‧區域 W‧‧‧晶圓
附加之圖式納入作為本說明書之一部分來顯示本揭示之實施形態，與上述之一般說明及後述之實施形態的細節一同說明本揭示之概念。
圖1係顯示本發明第1實施形態之基板處理裝置的一例之全體結構的圖。
圖2係將本發明第1實施形態之基板處理裝置的晶舟及內管之對向面附近的結構放大顯示之截面圖。
圖3係顯示本發明第2實施形態之基板處理裝置的一例之截面圖。
圖4係顯示本發明第3實施形態之基板處理裝置的一例之截面圖。
圖5係顯示本發明第4實施形態之基板處理裝置的一例之截面圖。
60‧‧‧晶舟
61‧‧‧支柱
62‧‧‧分隔板
63‧‧‧外周側面
64‧‧‧突出構造部
70‧‧‧間隙
80‧‧‧內周壁面
81‧‧‧突出部
82‧‧‧內周側面
83‧‧‧突出構造部
85‧‧‧排氣口
90‧‧‧氣體供給管路
91‧‧‧合流管路
92‧‧‧分歧管路
100‧‧‧區域
W‧‧‧晶圓

Claims (8)

  1. 一種基板處理裝置，包含：基板保持具，其可將複數之基板於鉛直方向留有間隔而裝載成多段，並具有將裝載該複數之基板的區域於鉛直方向分隔之複數的分隔板；處理容器，其可收納該基板保持具；突出部，從該處理容器內之與該分隔板的外周側面對向之內周壁面朝該分隔板之外周側面向內側突出延伸，並在形成於該突出部之突出之前端的內周側面與該分隔板的外周側面之間形成間隙；及氣體供給機構，其包含設置在該突出部內的第1管路與設置在該分隔板內的第2管路之至少一者，並且可從形成於該突出部之該內周側面的第1供給口與形成於該分隔板之外周側面的第2供給口之至少一者，將惰性氣體供給至該間隙而形成壓力高於周圍之正壓部，該間隙係形成於該突出部之該內周側面與該分隔板的外周側面之間，其中該第1供給口係與該第1管路連通，以及其中該第2供給口係與該第2管路連通。
  2. 如申請專利範圍第1項之基板處理裝置，其中，該分隔板呈圓板形狀，該正壓部呈圓環形狀。
  3. 如申請專利範圍第1項之基板處理裝置，其中， 該氣體供給機構係貫穿該分隔板與該突出部兩者中的至少一者之內部而設。
  4. 如申請專利範圍第1項之基板處理裝置，其中，在該突出部之該內周側面與該分隔板之外周側面兩者中的至少一者設有曲徑構造。
  5. 如申請專利範圍第4項之基板處理裝置，其中，該曲徑構造具有朝對向面突出之複數的突出構造，該複數之突出構造包含沿著該突出部之該內周側面及該分隔板之外周側面兩者中的至少一者的上面、與該突出部之該內周面側及該分隔板之外周側面兩者中的至少一者的下面而設置之突出構造。
  6. 如申請專利範圍第1項之基板處理裝置，其中，該複數之分隔板及該突出部包含設成包圍裝載該基板之區域的上端及下端之分隔板及突出部。
  7. 如申請專利範圍第1項之基板處理裝置，更包含：處理氣體供給機構，其於該處理容器內之鉛直方向延亙且往橫方向吐出處理氣體；於該處理容器內之該內周壁面的該突出部之間的區域設排氣口，而構成可在該分隔板之間的區域形成側流。
  8. 如申請專利範圍第1項之基板處理裝置，其中，該處理容器係縱長之反應管，該處理容器內之該內周壁面係設於該反應管內之內管的內周壁面，於該處理容器之周圍設有用以加熱該複數之基板的加熱器。
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