TWI694496B - 基板處理裝置、噴射器、及基板處理方法 - Google Patents

基板處理裝置、噴射器、及基板處理方法 Download PDF

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TWI694496B
TWI694496B TW106139403A TW106139403A TWI694496B TW I694496 B TWI694496 B TW I694496B TW 106139403 A TW106139403 A TW 106139403A TW 106139403 A TW106139403 A TW 106139403A TW I694496 B TWI694496 B TW I694496B
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substrate processing
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purge
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古澤純和
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日商東京威力科創股份有限公司
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Abstract

本發明提供一種基板處理裝置，即使於進行急遽之氣體導入時，亦可抑制粒子被帶入處理容器內。 依本發明之基板處理裝置，包含有用以收納複數之基板的處理容器、用以將氣體供至該處理容器內之氣體供給部、用以排放該處理容器內之氣體的排氣部。該基板處理裝置並包含有用以將該氣體供給部內驅氣之驅氣部；該氣體供給部連接於該驅氣部。

Description

基板處理裝置、噴射器、及基板處理方法
本發明係有關於基板處理裝置、噴射器、及基板處理方法。
在以原子層沉積(ALD：Atomic Layer deposition)等程序對基板進行成膜處理之基板處理裝置中，為瞬時將反應氣體供至反應容器內，而預先將供給氣體儲存於緩衝槽等，且可一面以質量流量控制器(MFC)等調整流量，一面以氣體噴嘴等噴射器將氣體供至反應容器內。
於日本專利公開公報2009-295729號(專利文獻1)揭示有一種基板處理裝置，該基板處理裝置包含有用以收納複數片基板並加以處理之反應管、用以將氣體供至反應管內之氣體噴嘴、及用以控制供給氣體之流量的質量流量控制器，且可以ALD法對基板進行成膜處理。 [先前技術文獻] [專利文獻]
[專利文獻1]日本專利公開公報2009-295729號
[發明欲解決之問題]
然而，在記載於專利文獻1之以往的基板處理裝置，直至流量穩定為止很費時，而在此期間有進行急遽之氣體導入的情形。當在氣體流量穩定前進行急遽之氣體導入時，有下述問題，前述問題係附著於氣體噴嘴之副生成物、形成於氣體噴嘴內之膜的剝落、因剝落之膜的壓力而在氣體噴嘴內破裂之石英片等作為粒子(垃圾或塵埃等)而被帶入反應容器內，該等粒子附著於基板。
此外，為防止此種粒子被帶入反應管內，以往進行了將包含基板處理裝置之噴射器的氣體供給管路分解並清洗，再度組裝這樣的作業，但保養費工。又，雖亦可使反應氣體流入氣體噴嘴，使粒子源固結(成膜)而防止粒子之產生，但產生氣體噴嘴之氣孔等閉塞而無法再進行原本之氣體供給的問題。
是故，本發明之目的在於提供即使進行急遽之氣體導入時，亦可抑制粒子被帶入處理容器內之基板處理裝置。 [解決問題之手段]
為達成上述目的，本發明一態樣之基板處理裝置包含有用以收納複數之基板的處理容器、用以將氣體供至該處理容器內之氣體供給部、用以排放該處理容器內之氣體的排氣部；該基板處理裝置並包含有用以將該氣體供給部內驅氣之驅氣部；該氣體供給部連接於該驅氣部。 [發明之功效]
根據本發明之一態樣，即使進行急遽之氣體導入時，亦可抑制粒子被帶入處理容器內。
[用以實施發明之形態]
以下，就用以實施本發明之形態，參照圖式來說明。此外，在本說明書及各圖中共通之結構有附上同一符號而省略說明之情形。
圖1係實施形態之基板處理裝置的一例之成膜裝置1的概略圖。如圖1所示，成膜裝置1包含有反應容器4、氣體供給管路40、排氣管路70。成膜裝置1更包含有用以將晶圓W加熱之圖中未示的加熱機構。
反應容器4用以收納基板亦即半導體晶圓(以下稱為「晶圓W」)。反應容器4具有雙重管構造，該雙重管構造具有呈長向為鉛直方向之大約圓筒形且具有頂部之外筒6、及於外筒6之內側配置成同心的圓筒體內筒8。外筒6及內筒8以石英等耐熱性材料形成。此外，反應容器4係構成本發明基板處理裝置的一部分之處理容器的一例。
外筒6及內筒8以由不鏽鋼等形成之歧管10保持各自之下端部。歧管10固定於基底板12。此外，歧管10可以與外筒6及內筒8獨立分開之構件形成，亦可與外筒6及內筒8形成一體。
舉例而言，在圖1，將歧管10形成為反應容器4之一部分而與外筒6及內筒8一同形成大約圓筒之內部空間。此時，反應容器4具有以石英等耐熱性材料形成之外筒6及內筒8、以不鏽鋼等形成之歧管10，歧管10於反應容器4之側面下部設成從下方保持外筒6及內筒8。
於歧管10之下端部設有將反應容器4之下端的開口部側堵塞成氣密之蓋部14。蓋部14以不鏽鋼等形成圓盤狀，藉由O型環等圖中未示之密封構件安裝成可氣密密封。
又，於蓋部14之大約中心部插通有可以圖中未示之磁性流體密封件等保持氣密狀態並可旋轉之旋轉軸20。旋轉軸20之下端連接於旋轉設備22，於旋轉軸20之上端固定有以例如不鏽鋼形成之台24。
於台24上設置有以石英等耐熱性材料形成之保溫筒26。又，於保溫筒26上載置有以石英等耐熱性材料形成之晶舟28作為支撐具。
晶舟28係將複數片晶圓W以預定間隔保持來收納於反應容器4內之基板保持具。在晶舟28，多片(例如50~175片)晶圓W等基板以預定間隔、例如10mm左右之間距收納。晶舟28、保溫筒26、台24及蓋部14藉具有例如晶舟升降機之功能的升降設備30於反應容器4內形成一體，而可搬入(載入)至反應容器4內，且可從反應容器4搬出(卸載)。
又，氣體供給管路40將預定氣體(例如含矽氣體等處理氣體)供至反應容器4內。氣體供給管路40具有處理氣體之供給源亦即氣體供給源41、氣體配管42、氣體噴嘴43。此外，氣體供給管路40係構成本發明基板處理裝置的一部分之氣體供給部的一例。氣體噴嘴43係構成該氣體供給部之一部分的噴射器之一例。
氣體配管42係連接氣體供給源41與氣體噴嘴43而將來自氣體供給源41之處理氣體引導至氣體噴嘴43的配管。於氣體配管42設有開關閥44、質量流量控制器(MFC)等流量控制器45、儲存部(緩衝槽)46、及開關閥47。
舉例而言，在關閉開關閥47之狀態下，開啟開關閥44，從氣體供給源41使處理氣體以預定流量流動，藉此，可將處理氣體儲存(裝載)於儲存部46。將處理氣體儲存於儲存部46後，關閉開關閥44，並開啟開關閥47，藉此，可藉由氣體噴嘴43將預定量之處理氣體供至反應容器4內。藉該等，可控制處理氣體之供給開始/停止、及流量。
氣體噴嘴43係連接於氣體配管42並貫穿歧管10之側壁至內側後往上方彎曲接著垂直地延伸之噴嘴，以例如石英管形成。在氣體噴嘴43之垂直部分，沿著其長度方向以預定間隔形成有複數之氣體吐出孔48，而可從各氣體吐出孔48往水平方向朝反應容器4內大致均一地吐出處理氣體。即，可往平行於晶圓W之表面的方向供給處理氣體。此外，氣體噴嘴43不限1根，亦可設2根以上。
又，亦可設供給不同於以氣體供給管路40供給之處理氣體的處理氣體(例如含氮氣體)之圖中未示的其他氣體供給管路。此時亦可與氣體供給管路40之結構同樣地，使其他氣體供給管路為具有圖中未示之氣體供給源、氣體配管、及氣體噴嘴的結構。
在此其他氣體供給管路亦是氣體噴嘴為連接於氣體配管並貫穿歧管10之側壁至內側後往上方彎曲接著垂直地延伸之噴嘴，可以例如石英管形成。可構造成在其他氣體噴嘴之垂直部分，沿著其長度方向以預定間隔形成複數之氣體吐出孔，而可從各氣體吐出孔往水平方向朝反應容器4大致均一地吐出其他處理氣體，往平行於晶圓W之表面的方向供給含氮氣體。此外，其他氣體供給管路亦是氣體噴嘴不限1根，亦可設2根以上。
又，構成其他氣體供給管路之氣體噴嘴亦可兼用氣體供給管路40之氣體噴嘴管路。此時，只要結構係於氣體配管設圖中未示之開關閥、質量流量控制器(MFC)等流量控制器、儲存部(緩衝槽)及開關閥，並使儲存部之開關閥的下游與氣體供給管路40之開關閥47的下游匯合即可。藉該等，其他氣體供給管路亦可控制氣體之供給開始/停止、及流量。
又，雖圖中未示，但亦可設用以將吹掃氣體供至反應容器4之吹掃氣體供給管路。吹掃氣體供給管路可為具有吹掃氣體供給源、吹掃氣體配管及吹掃氣體噴嘴之結構。
吹掃氣體配管係連接吹掃氣體供給源與吹掃氣體噴嘴而將來自吹掃氣體供給源之吹掃氣體引導至吹掃氣體噴嘴之配管。於吹掃氣體配管設控制吹掃氣體之流量的流量控制器及開關閥，而可控制吹掃氣體之供給開始/停止、及流量。吹掃氣體噴嘴係連接於吹掃氣體配管並貫穿歧管10之側壁至內側的筆直狀(直管狀)噴嘴，可以例如石英管形成。
排氣管路70用以排放反應容器4內之氣體。排氣管路70連結於設在歧管10之上部的氣體出口32。排氣管路70具有連接於氣體出口32之排氣通路71、依序連接於排氣通路71之中途的壓力調整閥72及真空泵73。壓力調整閥72在本例中是壓力計與開關閥構成一體，亦可將壓力計與開關閥個別構成。可以此排氣管路70一面調整反應容器4內之環境氣體的壓力一面排氣。此外，排氣管路70係構成本發明基板處理裝置之一部分的排氣部之一例。
於反應容器4之外周側設有包圍反應容器4而用以將晶圓W加熱之圖中未示的加熱器裝置。加熱器裝置具有具頂面之圓筒體隔熱層。隔熱層可以例如熱傳導性低且柔軟之無定形二氧化矽及氧化鋁的混合物形成。隔熱層配置成其內周對反應容器4之外面拉開預定距離。
又，可將以不鏽鋼等形成之圖中未示的保護蓋於隔熱層之外周安裝成覆蓋隔熱層之外周整體。又，圖中未示之加熱器元件捲繞成螺旋狀來配置於隔熱層之內周側。加熱器元件可於隔熱層之內周側遍及側面之軸方向整體捲繞而設。
加熱器元件可在軸方向分割成複數個區域(例如4個區域)。結構可為依據以按各區域設於隔熱層之圖中未示的熱電偶檢測之溫度，按各區域獨立地控制溫度。
成膜裝置1之各構成部的控制可以電腦等控制部90進行。控制部90進行例如氣體供給管路40之開關閥44、47的開關所行之處理氣體的供給/停止、流量控制器45所行之氣體流量控制、排氣管路70之壓力調整閥72及真空泵73所行的反應容器4內之壓力控制、加熱器裝置之溫度控制。
於控制部90連接有記憶部91，該記憶部儲存了用以藉控制部90之控制實現在成膜裝置1執行之各種處理的控制程式、及用以按處理條件使成膜裝置1之各構成部執行處理的各種程式(或配方)。程式包含用以使成膜裝置1執行後述成膜方法之程式。又，各種程式可記憶於記憶媒體並儲存於記憶部91。記憶媒體可為硬碟或半導體記憶體，亦可為CD-ROM、DVD、快閃記憶體等可攜性記憶媒體。又，亦可從其他裝置適宜地藉由例如專用線路將配方傳送至記憶部91。
在本實施形態中，如圖1所示，於氣體供給管路40連接有驅氣管路50。驅氣管路50為將氣體供給管路40內驅氣之驅氣部的一例。驅氣管路50連結於氣體供給管路40之氣體噴嘴43。於驅氣管路50設有氣體配管51及開關閥52。又，可於驅氣管路50設真空泵。
氣體配管51連接於氣體供給管路40，可供將氣體供給管路40內驅氣後之驅氣氣體通過。開關閥52設於氣體配管51之中途，與真空泵連動，而可控制連接於驅氣管路50之氣體供給管路40的氣體噴嘴43內之壓力。
此外，與驅氣管路50之開關閥52連動的真空泵可兼用排氣管路70之真空泵73。此時，驅氣管路50連接於排氣管路70。具體而言，於排氣管路70之壓力調整閥72與真空泵73之間連接驅氣管路50之氣體配管51。由於藉此結構，可以1個真空泵控制排氣管路與驅氣管路，故即使設驅氣管路，亦可使用既有之真空泵，而可防止裝置之複雜化。
圖2~圖7係分別說明構成本實施形態之氣體供給管路40的一部分之氣體噴嘴43的結構例(第1實施形態~第6實施形態)之圖。
首先，在第1實施形態中，如圖1及圖2所示，氣體噴嘴43之至少其中一端部與氣體供給管路40之氣體配管42連通，另一端部與驅氣管路50連通。又，氣體噴嘴43之氣體吐出孔48以構成與反應容器4內連通而用以將處理氣體供至反應容器4內之供給口的複數之氣孔形成。
於氣體噴嘴43之兩端部設有開口部49(開口部49A、49B)。設於其中一端部之開口部49A構成從氣體供給管路40之氣體配管42將處理氣體導入至氣體噴嘴43內之導入口。又，設於另一端部之開口部49B構成將驅氣氣體排出至驅氣管路50之氣體配管51的排出口。即，氣體噴嘴43藉由開口部49A與氣體供給管路40連通，藉由開口部49B與驅氣管路50連通。
在此結構，於氣體噴嘴43除了設有將處理氣體供至反應容器4內之供給口(氣體吐出口48)外，還設有將導入至氣體噴嘴43內之處理氣體驅氣的排出口(開口部49B)，而可藉由該排出口將驅氣管路50連接於氣體噴嘴43。因此，可將造成粒子之粒子源(附著於氣體噴嘴之副生成物、形成於氣體噴嘴內之膜的剝落、因剝落之膜的壓力而在氣體噴嘴內破裂之石英片等)從氣體噴嘴43驅氣至驅氣管路50。
特別是由於在供至反應容器內之處理氣體的流量穩定前，即使進行急遽之處理氣體的導入時，亦可從氣體噴嘴43將粒子源驅除至排氣管路50，故可抑制粒子被帶入至反應容器4內。
在第2實施形態中，如圖1及圖3所示，除了第1實施形態之結構，還具有連接於氣體噴嘴43之驅氣管路50的氣體配管51延伸至氣體噴嘴43之開口部49A(氣體供給管路40之氣體配管42)附近的結構。由於藉此結構，可將驅氣管路50之氣體配管51與氣體供給管路40之氣體配管42匯集而安裝於反應容器4(歧管10)，故易配置驅氣管路50之氣體配管51。
又，在第2實施形態中，如圖3所示，氣體供給管路40之氣體配管42在氣體噴嘴43之開口部49A附近形成L字形。即，氣體配管42以端部彎折之狀態連接於氣體噴嘴43之開口部49A。藉此結構，可將氣體配管42安裝於反應容器4之側壁(歧管10)，而易進行氣體供給管路40之配置作業。
在第3實施形態中，如圖4所示，驅氣管路50(氣體配管51)之一部分配置於氣體噴嘴43之內部。即，以驅氣管路50之氣體配管51的一部分與氣體噴嘴43構成雙重管。又，在第3實施形態之結構中，驅氣管路50之氣體配管51的一部分亦配置於連接於氣體噴嘴43的氣體配管42之內部。由於藉此結構，可省略配置驅氣管路50之氣體配管51所需的空間之一部分，故可使驅氣管路50之配置小型化。
又，在第4實施形態中，如圖5所示，不僅採用第3實施形態之結構，而且以驅氣管路50之氣體配管51的一部分與連接於氣體噴嘴43之氣體配管42構成雙重管的部分形成L字形。藉此結構，可將驅氣管路50設成更小型化。
在第5實施形態中，如圖6所示，氣體吐出孔48以1個氣孔形成。此時，氣體噴嘴43只要氣體噴嘴43之至少其中一端部於反應容器4內形成氣孔即可。如此，驅氣管路50可不論氣孔之數而設。
又，在第5實施形態之結構中，於氣體噴嘴43之另一端部(與驅氣管路50連通之開口部49B側)形成有氣體吐出孔48。在此種結構中，由於氣孔配置於與驅氣管路50連通之開口部49B(排出口)附近，故可以良好效率將包含氣孔附近之粒子源的氣體驅除。
又，在第6實施形態中，如圖7所示，不僅採用第5實施形態之結構，而且以驅氣管路50之氣體配管51的一部分及連接於氣體噴嘴43之氣體配管42構成雙重管的部分形成L字形。藉此結構，可使驅氣管路50更小型化。
接著，就使用上述成膜裝置1之本實施形態的基板處理方法之一例作說明。圖8係顯示實施形態之基板處理方法的一例之流程圖。
本實施形態之基板處理方法至少包含有氣體供給製程及驅氣製程。氣體供給製程將處理氣體從氣體噴嘴43供至收納複數之晶圓W的反應容器4內。
排氣製程於氣體供給製程之前進行，在驅氣製程，將氣體噴嘴43內驅氣。在驅氣製程，將氣體噴嘴43內之壓力控制為負壓。
驅氣製程以圖8所示之程序進行。首先，在ST1，判定供給氣體之程序是否為第1個處理步驟。當判斷為非第1個處理步驟時，便前進至ST7，執行氣體供給製程，進行普通之氣體供給程序。
當在ST1判定為第1個處理步驟時，便前進至ST2，開啟驅氣管路50。具體而言，在ST2令驅氣管路50之開關閥52為開啟狀態，在ST3令氣體噴嘴43內為負壓。此時，使開關閥52與排氣管路70之真空泵73連動而將與驅氣管路50連通之氣體噴嘴43內減壓化。此外，驅氣管路50之開通(ST2)與氣體噴嘴43內之減壓化(ST3)亦可同時進行。
接著，前進至ST4，對流量控制器(MFC)45指示處理氣體之流量。指示之氣體流量可調整為可進行氣體噴嘴43內之驅氣的適當流量。流量控制器(MFC)45依據所指示之流量，控制開關閥44、47之開關，控制流至氣體供給管路40之處理氣體的流量，而使處理氣體流至氣體供給管路40(ST5)。
之後，關閉驅氣管路50。具體而言，使驅氣管路50之開關閥52呈關閉狀態(ST6)。
然後，當上述ST1~ST6之程序完畢後，前進至ST7，執行氣體供給製程，而進行普通之氣體供給程序。此外，ST1~ST7之程序的控制以上述控制部90進行。
又，在驅氣製程中，將反應容器4內之壓力控制為高於氣體噴嘴43內之壓力的壓力。即，將驅氣管路50之開關閥52、排氣管路70之壓力調整閥72及真空泵73控制成氣體噴嘴43內之壓力小於反應容器4內之壓力。
藉此控制，導入至氣體噴嘴43內之處理氣體不從氣體吐出孔48吐出至反應容器4內，而是直接流至驅氣管路50。因此，在驅氣製程，通過氣體供給管路40之驅氣氣體不吐出至反應容器4內而藉由驅氣管路50排放至外部。
又，藉此控制，反應容器4之環境氣體藉由氣體吐出孔48被吸引至氣體噴嘴43內。因此，可將形成於氣體噴嘴43之氣體吐出孔48附近的粒子源及於反應容器4內浮游之粒子引入至驅氣氣體流動之氣體噴嘴43。
藉實施進行此種控制之基板處理方法，即使進行急遽之氣體導入，亦可抑制粒子被帶入處理容器內。
接著，就使用本實施形態之基板處理裝置(第2實施形態)實施了實施形態的基板處理方法時之效果作說明。圖9係在ALD程序之第1個處理步驟從基板處理裝置的氣體噴嘴供給氣體之際的基板表面之粒子分佈。在此當中，圖9(A)顯示使用以往之基板處理裝置時的粒子分佈，圖9(B)顯示使用本實施形態之基板處理裝置時的粒子分佈。
首先，使用圖9(A)之以往的基板處理裝置時，附著於晶圓W之表面的粒子量多。又，附著於晶圓W之表面的粒子靠向氣體噴嘴43附近而附著於晶圓W上。
另一方面，使用圖9(B)之本實施形態的基板處理裝置時，附著於晶圓W之表面的粒子量比使用以往之基板處理裝置時少。又，附著於晶圓W之表面的粒子大致均一地附著於晶圓W上。
從該等結果可知，如本實施形態般，藉設驅氣管路50來實施驅氣製程，可防止粒子被帶入反應容器4內，而可抑制粒子附著於基板。又，亦可知即使粒子被帶入反應容器4內，亦可防止其靠向晶圓W之表面而附著。
如此，藉將驅氣管路50藉由排出口(開口部49B)連接於氣體噴嘴43，可將造成粒子之粒子源從氣體噴嘴43驅除至驅氣管路50，而使被帶入反應容器4內之粒子量少。因此，即使進行急遽之氣體導入時，亦可抑制粒子被帶入反應容器4內，而可防止晶圓W之生產性的降低。
此外，在本例中使用之氣體的種類可按形成之膜的種類適宜選擇。又，在本例中，舉了使用ALD法之情形為例來說明，使用CVD法時亦可適用本發明。即，本例可廣泛地用於在進行急遽之氣體導入的環境使用之成膜方法。
以上就用以實施本發明之形態作了說明，本發明不限上述實施形態，可在本發明之範圍內進行各種變形及改良。
1‧‧‧成膜裝置4‧‧‧反應容器6‧‧‧外筒8‧‧‧內筒10‧‧‧歧管12‧‧‧基底板14‧‧‧蓋部20‧‧‧旋轉軸22‧‧‧旋轉設備24‧‧‧台26‧‧‧保溫筒28‧‧‧晶舟30‧‧‧升降設備32‧‧‧氣體出口40‧‧‧氣體供給管路41‧‧‧氣體供給源42‧‧‧氣體配管43‧‧‧氣體噴嘴44‧‧‧開關閥45‧‧‧流量控制器46‧‧‧儲存部47‧‧‧開關閥48‧‧‧氣體吐出孔49‧‧‧開口部49A‧‧‧開口部49B‧‧‧開口部50‧‧‧驅氣管路51‧‧‧氣體配管52‧‧‧開關閥70‧‧‧排氣管路71‧‧‧排氣通路72‧‧‧壓力調整閥73‧‧‧真空泵90‧‧‧控制部91‧‧‧記憶部ST1‧‧‧程序ST2‧‧‧程序ST3‧‧‧程序ST4‧‧‧程序ST5‧‧‧程序ST6‧‧‧程序ST7‧‧‧程序W‧‧‧晶圓
圖1係本發明實施形態之基板處理裝置的概略圖。 圖2係顯示實施形態之基板處理裝置的噴射器之一例的圖。 圖3係顯示實施形態之基板處理裝置的噴射器之另一例的圖。 圖4係顯示實施形態之基板處理裝置的噴射器之另一例的圖。 圖5係顯示實施形態之基板處理裝置的噴射器之另一例的圖。 圖6係顯示實施形態之基板處理裝置的噴射器之另一例的圖。 圖7係顯示實施形態之基板處理裝置的噴射器之另一例的圖。 圖8係顯示實施形態之基板處理方法的一例之流程圖。 圖9係顯示在ALD程序的第1個處理步驟供給氣體之際的基板表面上之粒子分佈的圖，(A)顯示使用以往之基板處理裝置時的粒子分佈，(B)顯示使用本實施形態之基板處理裝置時的粒子分佈。
1‧‧‧成膜裝置
4‧‧‧反應容器
6‧‧‧外筒
8‧‧‧內筒
10‧‧‧歧管
14‧‧‧蓋部
20‧‧‧旋轉軸
22‧‧‧旋轉設備
24‧‧‧台
26‧‧‧保溫筒
28‧‧‧晶舟
30‧‧‧升降設備
32‧‧‧氣體出口
40‧‧‧氣體供給管路
41‧‧‧氣體供給源
42‧‧‧氣體配管
43‧‧‧氣體噴嘴
44‧‧‧開關閥
45‧‧‧流量控制器
46‧‧‧儲存部
47‧‧‧開關閥
48‧‧‧氣體吐出孔
49‧‧‧開口部
50‧‧‧驅氣管路
51‧‧‧氣體配管
52‧‧‧開關閥
70‧‧‧排氣管路
71‧‧‧排氣通路
72‧‧‧壓力調整閥
73‧‧‧真空泵
90‧‧‧控制部
91‧‧‧記憶部
W‧‧‧晶圓

Claims (10)

  1. 一種基板處理裝置，包含：處理容器，收納複數之基板；氣體供給部，將氣體供至該處理容器內；及排氣部，排放該處理容器內之氣體；該基板處理裝置並包含：驅氣部，將該氣體供給部內驅氣，其中該驅氣部連接於該排氣部；該氣體供給部連接於該驅氣部。
  2. 如申請專利範圍第1項之基板處理裝置，其中，該氣體供給部具有用以將氣體供至該處理容器內之噴射器，該噴射器之至少其中一端部連接於該驅氣部。
  3. 如申請專利範圍第2項之基板處理裝置，其中，該驅氣部之一部分配置於該噴射器之內部。
  4. 如申請專利範圍第2項之基板處理裝置，其中，該噴射器形成有連通該處理容器內的複數之氣孔。
  5. 如申請專利範圍第2項之基板處理裝置，其中，該噴射器係於該噴射器之至少其中一端部形成有連通該處理容器內之氣孔。
  6. 一種噴射器，用以將氣體供至收納有複數之基板的處理容器內，並包含：導入口，將氣體導入至該噴射器；供給口，將氣體供至該處理容器內；及排出口，連通於用以將該噴射器內驅氣之排氣管路。
  7. 如申請專利範圍第6項之噴射器，其中，該供給口係以複數之氣孔構成。
  8. 如申請專利範圍第6項之噴射器，其中，該供給口係由形成於該噴射器之至少其中一端部的氣孔構成。
  9. 一種基板處理方法，包含從噴射器將氣體供至收納著複數之基板的處理容器內之氣體供給製程，並包含下列製程：驅氣製程，於該氣體供給製程前，將該噴射器內驅氣；在該驅氣製程，將該噴射器內之壓力控制為負壓。
  10. 如申請專利範圍第9項之基板處理方法，其中，在該驅氣製程，將該處理容器內之壓力控制為高於該噴射器內之壓力。
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