TWI706502B - 用於處置對準的晶圓對之方法 - Google Patents
用於處置對準的晶圓對之方法 Download PDFInfo
- Publication number
- TWI706502B TWI706502B TW105114719A TW105114719A TWI706502B TW I706502 B TWI706502 B TW I706502B TW 105114719 A TW105114719 A TW 105114719A TW 105114719 A TW105114719 A TW 105114719A TW I706502 B TWI706502 B TW I706502B
- Authority
- TW
- Taiwan
- Prior art keywords
- wafers
- end effector
- aligned
- wafer
- frame member
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 69
- 239000012636 effector Substances 0.000 claims abstract description 155
- 238000012545 processing Methods 0.000 claims abstract description 32
- 235000012431 wafers Nutrition 0.000 claims description 301
- 125000006850 spacer group Chemical group 0.000 claims description 83
- 230000008569 process Effects 0.000 claims description 23
- 230000006835 compression Effects 0.000 claims description 21
- 238000007906 compression Methods 0.000 claims description 21
- 230000007246 mechanism Effects 0.000 claims description 17
- 230000000712 assembly Effects 0.000 claims description 11
- 238000000429 assembly Methods 0.000 claims description 11
- 238000003825 pressing Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 13
- 238000012546 transfer Methods 0.000 description 51
- 238000010586 diagram Methods 0.000 description 18
- 238000003860 storage Methods 0.000 description 12
- 238000013461 design Methods 0.000 description 10
- 238000005304 joining Methods 0.000 description 9
- 230000033001 locomotion Effects 0.000 description 8
- 238000001816 cooling Methods 0.000 description 6
- 210000003128 head Anatomy 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 210000001331 nose Anatomy 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- 241000309551 Arthraxon hispidus Species 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000006094 Zerodur Substances 0.000 description 1
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000006017 silicate glass-ceramic Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/6773—Conveying cassettes, containers or carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67733—Overhead conveying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67766—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/682—Mask-wafer alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
- H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
- H01L2224/081—Disposition
- H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/08135—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/08145—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/751—Means for controlling the bonding environment, e.g. valves, vacuum pumps
- H01L2224/75101—Chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75302—Shape
- H01L2224/75303—Shape of the pressing surface
- H01L2224/75305—Shape of the pressing surface comprising protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75302—Shape
- H01L2224/7531—Shape of other parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75312—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7565—Means for transporting the components to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75701—Means for aligning in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75702—Means for aligning in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75703—Mechanical holding means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75743—Suction holding means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75754—Guiding structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/802—Applying energy for connecting
- H01L2224/80201—Compression bonding
- H01L2224/80203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/80905—Combinations of bonding methods provided for in at least two different groups from H01L2224/808 - H01L2224/80904
- H01L2224/80907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
- H01L24/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Manipulator (AREA)
- User Interface Of Digital Computer (AREA)
- Management, Administration, Business Operations System, And Electronic Commerce (AREA)
Abstract
用於處置精確地對準及置中的半導體晶圓對以供晶圓到晶圓對準和接合應用之工業規格的方法包括端效器,端效器具有框架構件及被連接至框架構件的浮動載具,且在浮動載具與框架構件之間形成有間隙,其中浮動載具具有半圓形內周。置中的半導體晶圓對係藉由使用機器人控制下的端效器而可定位於處理系統內。置中的半導體晶圓對在端效器未出現於接合裝置中的情形下被接合在一起。
Description
本發明關於用於處置對準的晶圓對之方法,且特別是利用一種端效器,其被建構成以適合於晶圓與晶圓接合應用的精確度的方式搬運對準的半導體晶圓對。
晶圓到晶圓(W2W)接合被採用於用來形成半導體裝置的半導體處理應用的廣泛範圍中。晶圓到晶圓接合被應用的半導體處理應用的範例包括積體電路的基材工程及製造、微機電系統(MEMS)的組裝及封裝、以及單純微電子件的許多處理層的堆疊(3D整合)。W2W接合涉及將兩個以上晶圓的表面對準、將對準的晶圓傳送至晶圓接合室中、促使晶圓表面接觸、及在它們之間形成強接合介面。如此製造的半導體裝置的整體製程產出及製造成本、及結合這些裝置的電子產品的最終成本大大地取決於晶圓到晶圓接合的品質。W2W接合的品質取決於晶圓對準的準確度、傳送及接合處理期間晶圓對準的保持、及整個晶圓接合介面上接合強度的均一性及完整性。此外,
為了避免晶圓的破裂、表面損壞、或撓屈,在晶圓的傳送、定位、置中及對準期間需要極度的照料。
圖1A描繪根據先前技術的被使用來將對準的晶圓從對準器(aligner)傳送至接合器(bonder)的習用傳送夾具(fixture)的示意圖。傳統地,晶圓對18在對準器站50中被對準,且對準的晶圓對18被固定於傳送夾具24上,如圖1A所示。傳送夾具24將對準的晶圓對18搬運至接合站60及任何進一步的處理站。先前技術的傳送夾具24被描述於2011年5月24日所公告且名稱為“APPARATUS AND METHOD FOR SEMICONDUCTOR BONDING”的美國專利第7,948,034中被描述,其內容在此以參照方式被特別併入。
圖2A描繪根據先前技術的圖1A的習用傳送夾具,且如圖3所討論,而圖2B描繪根據先前技術的圖2A的習用傳送夾具的夾鉗(clamp)總成的放大視圖。圖3是根據先前技術的藉由使用習用傳送夾具來將對準的晶圓對裝載至接合室中的示意圖。先參照圖3,習用傳送夾具24被定尺寸來固持對準的晶圓對(未示出),且傳送裝置16被使用來將傳送夾具24及對準的晶圓對移入及移出接合裝置12。在一個範例中,傳送裝置16是被自動地或否則手動操作的傳送臂或滑動器。
如圖2A中所示,傳送夾具24是通常由鈦所建構的圓形環件280,且包括繞圓形環件280對稱地隔開的三個鼻部280a、280b、280c,其作用為底座晶圓用的支
撐點。接近三個鼻部280a、280b、280c的每一個的是三個間隔件(spacer)和夾鉗總成282a、282b、282c,其在圓形環件282的周圍以120度分開而被對稱地配置。每一個間隔件和夾鉗總成282a、282b、282c包括間隔件284及夾鉗286。間隔件284被建構成將兩個晶圓以預定距離設定。具有不同厚度的間隔件可被選擇,以用來設定兩個晶圓之間的不同間距。一旦間隔件被插入於晶圓之間,夾鉗286被夾合以鎖定兩個晶圓的位置。夾鉗286可為向下移動的單一個結構或連桿組,以接觸上晶圓來將它維持於傳送夾具24上的位置。每一個間隔件284及每一個夾鉗286分別藉由線性制動器283及285而被獨立地啟動。
對於接合處理,兩個對準的晶圓被放置於傳送夾具24中且以間隔件284隔開,且然後以夾鉗286夾合。具有被夾鉗的晶圓的夾具被插入於接合裝置12中,且然後每一個夾鉗286以每次一個的方式打開夾鉗,且間隔件284被移除。一旦所有間隔件284被移除,兩個晶圓以氣動控制中心銷被堆疊在一起。然後,力柱被施加,以利於接合裝置12中在整個高溫接合處理中的接合處理。
在工業界中,所知的是,傳送夾具24能是重的,且對於傳送裝置16或機器人來處置是挑戰性的。此外,一旦它們被定位於接合裝置12內,傳送夾具24在整個接合處理期間維持於接合裝置12中,因此,使傳送夾具24經歷高達550℃溫度的接合環境、以及接合裝置12內可使用的室氣體及或壓力。特別地,傳送夾具24在離
接合裝置12的被加熱的夾頭的外周圍的幾毫米的位置可花費一個小時以上被定位,使得傳送夾具24變成非常熱。這些條件將顯著的應力量加在傳送夾具24上,特別是在間隔件284及夾鉗286的精細機構上。結果,經過一段時間,傳送夾具24變成不可靠,且需要包括機構靈敏度調整的重大保養,這具有高成本且花費實質時間。
在其他施作中,對準的晶圓對被暫時地接合,且暫時接合的晶圓對被傳送至接合站及任何其他的處理站中。晶圓的暫時接合可被使用來在處理期間將對準偏移誤差最小化。暫時晶圓接合技術包括以雷射光束將晶圓的中心或邊緣接合、以暫時黏性黏著劑(tack adhesive)將晶圓的中心或邊緣接合、及經由混合融合(hybrid fusion)將晶圓的中心或邊緣接合。接合的晶圓對然後以傳送夾具或類似習用傳送裝置被傳送至接合裝置。雷射接合技術需要至少一個雷射透明晶圓,且黏合接合技術可對晶圓表面造成汙染。
因此,鑑於前述的不足處及不適當處,所欲的是,提供工業規格的裝置,以用來精確地處置對準及置中的半導體晶圓對以供晶圓到晶圓接合應用,其具有高產量及處置所有類型的晶圓的能力而不會引進任何污染物。
本揭示的實施例提供用於處置晶圓的方法,特別是利用端效器。簡言之,在架構中,此系統的一個實
施例除了別的以外還能如以下來施作。端效器設備具有框架構件及被連接至框架構件的浮動載具,且在框架構件與浮動載具之間形成有間隙,其中浮動載具具有半圓形內周。複數個真空墊(vacuum pad)被連接至浮動載具,其中複數個真空墊的每一個在浮動載具的半圓形內周的內部延伸。
本揭示亦能被視為用於將對準的晶圓對放置至處理裝置中的方法系統。簡言之,在架構中,此系統的一個實施例除了別的以外還能如以下來施作。端效器具有框架構件及浮動載具,以用來以隔開對準的方式搬運晶圓,其中浮動載具被可移動地連接至框架構件。機器人手臂被連接至端效器。處理裝置具有處理室,其中框架構件及浮動載具被定位於處理室內,且其中浮動載具被從框架構件脫離。
本揭示亦能被視為提供用於將對準的晶圓對放置至處理裝置中的方法。簡言之,在架構中,此系統的一個實施例除了別的以外還能如以下來施作。端效器具有框架構件及浮動載具,其中浮動載具被可移動地連接至框架構件,且其中複數個夾鉗-間隔件總成被連接至框架構件及浮動載具中的至少一個,以用隔開對準的方式搬運晶圓。機器人手臂被連接至端效器。接合裝置具有接合室,其中框架構件及浮動載具在接合處理以前被定位於接合室內,且在接合處理期間被從接合室移除。
本揭示亦能被視為提供用於將對準的晶圓放
置至接合裝置中的方法。在此方面,這樣的方法的一個實施例除了別的以外還能用以下的步驟來廣義地總結:以端效器將晶圓以隔開對準的方式固定,端效器具有框架構件及被可移動地連接至框架構件的浮動載具;使用機器人移動端效器,藉此,移動晶圓至接合器的接合室中;將晶圓從端效器卸載;將端效器從接合室移除;及將晶圓接合。
本揭示的其他方法、特徵及優點對於本領域的技術人士在審視以下圖式及詳細說明時將會或變得明白。所想要的是,所有這樣的額外系統、方法、特徵及優點被包括於此說明內、於本揭示的範圍內、且由隨附申請專利範圍所保護。
12:接合裝置
16:傳送裝置
18:晶圓對
20:晶圓
20e:邊緣
22a:較大的晶圓尺寸
22b:較小的晶圓尺寸
24:傳送夾具
30:晶圓
30e:邊緣
50:對準器站
60:接合站
80:機器人手臂
82:互換器
84:工具交換器
86:儲存站
88:銷
90:方向
90b:方向
91:方向
92:方向
92a:方向
92b:方向
96a:方向
96a:方向
97a:方向
97b:方向
98:方向
99:方向
100:端效器
104:置中機構
105:銷
105a:孔
105b:孔
106:夾鉗
108:真空溝槽
110:框架構件
110a:半圓形內周
111a:位置
111b:位置
111c:位置
119:中心軸線
120:浮動載具
120a:內周
121:間隙
122a:真空墊
122b:真空墊
122c:真空墊
123a:方向
123b:方向
130a:夾鉗-間隔件總成
130b:夾鉗-間隔件總成
130c:夾鉗-間隔件總成
132a:夾鉗
132b:夾鉗
132c:夾鉗
134a:限制部
134b:限制部
134c:限制部
135a:孔
136a:端效器間隔件旗標
136b:端效器間隔件旗標
136c:端效器間隔件旗標
138a:接合件間隔件旗標
138b:接合件間隔件旗標
138c:接合件間隔件旗標
280:環形形狀環件
280a:鼻部
280b:鼻部
280c:鼻部
282a:間隔件和夾鉗總成
282b:間隔件和夾鉗總成
282c:間隔件和夾鉗總成
283:線性致動器
284:間隔件
285:線性致動器
286:夾鉗
300:對準裝置
320:夾頭
330:夾頭
360:間隔件旗標載運器
365:靜態支撐橋件
380:間隔件旗標機構
390:支撐框架
400:接合器
410:接合室
411b:方向
420:頂部夾頭
425:方向
426:方向
430:底部夾頭
432:缺口
450:z驅動器
455:上銷
455a:銷
455b:銷
455c:銷
460:壓力頭
470:接合頭
480:接合器間隔件旗標機構
482:氣動活塞
484:環件
486:架
488:軌
490:下加熱器
495:Z軸支撐柱
502:中心銷
504:下套筒
505:上套筒
506:銷尖端
510:中心殼體
512:中心銷襯套
514:長對直徑比
516:室唇部
518:力反應板
520:O型環
522:冷卻凸緣
524:熱隔絕構件
526:加熱器
528:襯套
530:插入腔
532:加熱器銷
600:流程圖
602:方塊
604:方塊
606:方塊
608:方塊
610:方塊
參酌以下圖式,本揭示的許多方面能被較佳地瞭解。圖式中的組件不必然依照尺寸比例,然而,所強調的重點清楚地繪示本揭示的原理。此外,在圖式中,相同元件在數個視圖各處中標示對應部件。
圖1A描繪根據先前技術的被使用來將對準的晶圓從對準器傳送至接合器的習用傳送夾具的示意圖;圖1B描繪根據本揭示的第一例示實施例的被使用來將對準的晶圓從對準器傳送至接合器的傳送裝置及方法的示意圖;圖2A描繪根據先前技術的圖1A的習用傳送夾具,且習用傳送夾具如圖3所示;
圖2B描繪根據先前技術的圖2A的習用傳送夾具的夾鉗總成的放大視圖;圖3是根據先前技術的藉由使用習用傳送夾具來將對準的晶圓對裝載入接合室的示意圖;圖4描繪根據本揭示的第一例示實施例的被使用來將對準的晶圓傳送入及傳送出處理室之端效器;圖5描繪根據本揭示的第一例示實施例的固持一對對準的晶圓的圖4的端效器的俯視圖;圖6描繪根據本揭示的第一例示實施例的固持一對對準的晶圓的圖4的端效器的仰視圖;圖7描繪根據本揭示的第一例示實施例的固持一對對準的晶圓的圖4的端效器的部分透明仰視圖;圖8A描繪根據本揭示的第一例示實施例的圖4的端效器的固持一對對準的晶圓的一部分的剖面圖;圖8B描繪根據本揭示的第一例示實施例的固持一對對準的晶圓的圖4的端效器的剖面圖;圖8C描繪根據本揭示的第一例示實施例的固持一對對準的晶圓的圖4的端效器的剖面圖;圖8D描繪根據本揭示的第一例示實施例的被定位於儲存站上的圖4的端效器的剖面圖;圖9描繪根據本揭示的第一例示實施例的具有用於固持不同尺寸的晶圓的可調整的真空墊之端效器的仰視圖;圖10A至圖10B描繪根據本揭示的第一例示
實施例的與機器人手臂一起使用的端效器;圖11A至圖11H示意地描繪根據本揭示的第一例示實施例的以圖4的端效器將對準的晶圓對卸載的步驟;圖12是根據本揭示的第一例示實施例的晶圓對準器的示意圖;圖13A至圖13I示意地描繪根據本揭示的第一例示實施例的以圖4的端效器將對準的晶圓對從對準器裝載入接合器的步驟;圖14描繪根據本揭示的第一例示實施例的以圖4的端效器將對準的晶圓對裝載入接合器;圖15A描繪根據本揭示的第一例示實施例的經由單一個中心銷將兩個晶圓銷定的示意圖;圖15B描繪根據本揭示的第一例示實施例的經由中心銷及偏心防止旋轉銷將兩個晶圓銷定的示意圖;圖15C描繪根據本揭示的第一例示實施例的經由三個周圍銷將兩個晶圓銷定的示意圖;圖16是根據本揭示的第一例示實施例的例示晶圓接合器的示意圖;圖17是根據本揭示的第一例示實施例的與晶圓接合器一起使用的例示接合器間隔件旗標機構的示意圖;圖18A及圖18B是根據本揭示的第一例示實施例的銷的一個範例的示意圖;及
圖19是繪示將對準的晶圓對放置至接合裝置中的方法的流程圖。
本揭示提供用於精確地處置對準及置中的半導體晶圓對的工業規格裝置,以供具有高產量的晶圓到晶圓的對準及結合應用。此裝置包括被附接於機器人手臂的末端處的端效器。端效器被建構成在沒有改變晶圓到晶圓的對準的情形下及在沒有引進任何污染物的情形下將對準的晶圓對固持、移動及放置入及出各種不同的處理站。
圖1B描繪根據本揭示的第一例示實施例的被使用來將對準的晶圓20、30從對準器傳送至接合裝置的傳送裝置及方法的示意圖。如圖1B中所示,端效器100被附接至機器人手臂80,且被建構成移動出及移動入對準裝置300及分開的具有接合裝置的接合器400。一對的兩個晶圓20、30被端效器100搬運至對準裝置300中,在此處,兩個晶圓20、30相對於彼此被對準,且它們的對準以端效器100被固定。接著,機器人手臂80將具有對準的成對的晶圓20、30的端效器100移動出對準裝置300及移動入接合器400,在此處,晶圓20、30能被接合。端效器100能夠將兩個對準的晶圓20、30放置於接合裝置中,然後機器人手臂80將端效器100從接合裝置移除,以供接合處理期間。一旦接合處理完成,機器人手臂80將端效器100移動回至接合裝置,以收集接合的成
對的晶圓20、30,成對的晶圓20、30在端效器100被從接合器400移除時由端效器100所支撐。在一些實施例中,對準裝置300及接合器400被整合至相同的反應器中。
圖4描繪根據本揭示的第一例示實施例的被使用來將對準的晶圓傳送入及傳送出處理室之端效器100。端效器100可包括Y形的框架構件110及被設置於框架構件110的頂部上的浮動載具120。在一個範例中,框架構件110具有半圓形內周110a,半圓形內周110a具有近似地匹配晶圓20、30的半徑之半徑。在其他範例中,框架構件110具有Y形或叉形內周。類似地,浮動載具120具有半圓形內周120a,半圓形內周120a具有近似地匹配晶圓20、30的半徑之半徑。根據本揭示,浮動載具120的半圓形內周120a可被理解成具有在完整環件(例如,360°)被形成以前終止的兩端之部分環件結構。如圖4所示,半圓形內周120a的結構可由包括實質180°旋轉的部分環件形狀之浮動載具120來形成,或是在其他設計中,部分環件形狀可高達270°。浮動載具120的其他部分環件組態亦可在本揭示的範圍內被考慮。
浮動載具120可由實質平面結構來形成,此實質平面結構被定向成與框架構件110的平面平行且被定位成與其隔開。浮動載具120可包括像是三個真空墊122a、122b、122c的數個真空墊,其朝向半圓形內周120a的中心軸線119向內突出。三個真空墊122a、
122b、122c可分別被定位於內周120a的三個以上的位置111a、111b、111c處。三個真空墊122a、122b及122c可被使用來固持頂部的晶圓20,如圖5中所描繪。
圖5描繪根據本揭示的第一例示實施例的固持一對對準的晶圓20、30的圖4的端效器100的俯視圖。圖6描繪根據本揭示的第一例示實施例的固持一對對準的晶圓20、30的圖4的端效器的仰視圖。參照圖4至圖6,要注意的是,端效器100可被理解成具有被定位於其頂部側上的浮動載具120,而框架構件110被定位於其底部側上。不像習用的傳送夾具是搬運其頂部表面上的對準的晶圓對的兩個晶圓,例如相對於圖2A至圖3所討論者,端效器100可在框架構件110的臂部的內部及在浮動載具120的延伸唇部的下方的位置搬運晶圓20、30。此設計允許晶圓20、30的邊緣在環繞框架構件110及浮動載具120的內周110a、120a的各種不同位置被固持於框架構件110與浮動載具120之間繞,像是分別經由三個夾鉗-間隔件總成130a、130b、及130c而在三個位置111a、111b、111c,如圖5及圖6中所示。特別地,頂部的晶圓20如圖5中所示可被定位成抵頂真空墊122a、122b及122c且藉由真空墊122a、122b及122c而被維持於浮動載具120的下側,而頂部的晶圓30可用機械式夾鉗132a、132b、及132c來維持。
圖7描繪根據本揭示的第一例示實施例的固持一對對準的晶圓的圖4的端效器的部分透明仰視圖。圖
8A描繪根據本揭示的第一例示實施例的圖4的端效器的固持一對對準的晶圓的一部分的剖面圖。參考圖4至圖8A,端效器100可另包括像是夾鉗-間隔件總成130a、130b、130c的數個總成,以繞框架構件110的內周110a固持及/或隔開晶圓。夾鉗-間隔件總成130a、130b、及130c可位於隔開的位置,其實質匹配真空墊122a、122b及122c的隔開定位。夾鉗-間隔件總成130a、130b及130c中的每一個分別可包括端效器間隔件旗標(flag)136a、136b及136c、機械式夾鉗132a、132b及132c、及限制部134a、134b及134c。
限制部134a、134b、134c可將浮動載具120及框架構件110鬆弛地耦接及固持在一起。間隙121被形成於浮動載具120與限制部134a、134b、134c中的每一個之間,如圖8A所示。間隙121提供浮動載具120的與框架構件110的振動隔絕,這可防止源自搬運端效器100的機器人的振動被傳送至浮動載具120,且亦允許浮動載具120以順應的方式坐落於頂部晶圓到夾頭基準介面上,及避免任何粗劣或壓力大的接觸。浮動載具120被建構成相對於框架構件110沿著圖8a的方向90上下移動,由限制部134a、134b、及134c所鬆弛地導引。雖然限制部134a、134b、134c可具有不同的設計,在一個範例中,限制部134a、134b、134c的下部可螺合地連接至框架構件110,而上部相對於浮動載具120係可移動。例如,限制部134a、134b、及134c的上部可包括可位於凹陷腔(例
如圖8a中的孔135a)內的頭部,這允許浮動載具120相對於框架構件110在方向90上的受限制移動,藉此,允許間隙121的最大尺寸的控制。額外地,限制部134a、134b、及134c相對於凹陷腔的尺寸可被選擇,以提供小量的側向餘隙,使得浮動載具120可相對於框架構件110被側向地稍微調整。
端效器間隔件旗標136a、136b、136c被使用來將晶圓20、30在由端效器100所接收時彼此隔開。在一個範例中,端效器間隔件旗標136a、136b、136c可由具有氮化鈦塗層的不鏽鋼本體所建構,但各種不同的材料及塗層亦可被使用。端效器間隔件旗標136a、136b、136c可在對應三個位置111a、111b、111c被插入於晶圓20的邊緣的下方,且然後晶圓30被堆疊於間隔件旗標136a、136b、136c的下方,如圖8A中所示。兩個堆疊的晶圓20、30然後可用夾鉗132a、132b、132c在對應三個位置111a、111b、111c被夾鉗在一起。間隔件旗標136a、136b、136c被建構成沿著方向92水平地移動,且夾鉗132a、132b、132c被建構成以樞轉運動、沿著線性滑動、以凸輪式運動、或其組合來移動,以接觸頂部的晶圓30。例如,在一個範例中,夾鉗132a、132b、132c可繞實質平行於半圓形內周120a的軸線的樞轉軸線旋轉。
圖7亦繪示接合器間隔件旗標138a、138b、138c,其為接合裝置所使用的間隔件旗標,以將兩個堆疊的晶圓20、30在它們被放置於接合裝置內時隔開。如能
為所見,接合器間隔件旗標138a、138b、138c可被定位於接近端效器間隔件旗標136a、136b、136c的位置,端效器間隔件旗標136a、136b、136c可繞浮動載具120的半圓形周圍被實質等距地隔開。
在一些使用中,可為所欲的是,將端效器100配備有置中及/或鎖定機構,以將浮動載具120置中及/或鎖定至框架構件110。圖8B描繪根據本揭示的第一例示實施例的固持一對對準的晶圓的圖4的端效器的剖面圖。確切地,圖8B繪示運用移動錐形銷105的置中機構104,這允許在每一使用循環之間將浮動載具120再置中於框架構件110。銷105藉由馬達或經由氣動致動而在框架構件110處的軸線上被精確地導引及驅動。銷105可在框架構件110中被定位於第一孔105a內,且在浮動載具120中嚙合精確裝配孔105b。銷105可被使用於再置中的目的、或亦可在傳送期間被使用來將浮動載具120限制於框架構件110。在其他設計中,銷105可為位於框架構件110上的固定銷,其在框架構件110與浮動載具120之間的距離非常小時(例如,小於銷105本身的長度)於浮動載具120中嚙合精確裝配孔105b,且在浮動載具120移動回至框架構件110上時被重設。
圖8B亦繪示機械式夾鉗106的使用,機械式夾鉗106可被使用來將框架構件110固定至浮動載具120的。機械式夾鉗106可被安裝至框架構件110,且可在垂直方向或旋轉方向上被移動來將框架構件110嚙合至浮動
載具,以將浮動載具120固持於框架構件110及避免浮動載具120的位置改變。
圖8C描繪根據本揭示的第一例示實施例的固持一對對準的晶圓的圖4的端效器的剖面圖。在圖8C中,整合的固定再索引(re-indexing)銷及真空溝槽可被使用來將框架構件110夾鉗至浮動載具120。如所示,框架構件110可具有延伸至浮動載具120中的孔105b的銷107、以及被定位於框架構件110與浮動載具120界接(interface)的表面上的複數個真空溝槽108。負壓可被施加至真空溝槽108以將浮動載具120偏移至框架構件110,而銷107作用來將浮動載具120置中於框架構件110。
圖8D描繪根據本揭示的第一例示實施例的被定位於儲存站上的圖4的端效器的剖面圖。如所示,框架構件內110的孔105a、105b及浮動載具120能以端效器100被使用於傳遞處理,以在不同的端效器100之間變換。確切地,如相對於圖10A所描述,搬運端效器100的機器人手臂可將端效器100定位成接近具有向外延伸的銷88的儲存站86。端效器100可被導引超過儲存站86的銷88,直到銷88與孔105a、105b嚙合為止。一旦銷88被定位於孔105a、105b內,機器人手臂可從端效器100斷開連接,這將端效器100留在儲存站86的收藏位置。具有銷88的儲存站86可提供端效器100在其未使用時的安全儲存,且允許機器人手臂在不同的端效器100之間快速
地變換。
要另注意的是,當端效器100被從接合裝置移除時,端效器100的高溫可藉由使用被定位於框架構件110或端效器100的另一部分上的整合熱電偶而被監測。在另一個設計中,儲存站86可配備有熱電偶,以允許端效器100在其被收藏於儲存站86中時的熱監測。此外,當端效器100被放置於儲存站86中時,可為所欲的是,它藉由自然冷卻或是利用冷卻裝置而被冷卻至較低的溫度。
圖9描繪根據本揭示的第一例示實施例的具有可調整來固持不同尺寸的晶圓的真空墊122a、122b及122c之端效器100的仰視圖。如所示,真空墊122a、122b及122c可被可移動地連接至浮動載具120,使得它們能沿著半圓形內周120a(例如,沿著方向123a、123b)被徑向地調整,使得它們能被移動更近且更朝向半圓形內周120a的中心點。圖9在兩個例示位置繪示顯示真空墊122a、122b及122c的一般輪廓的虛線框:一個位置是它們被定位成更接近中心點以固持較小的晶圓尺寸22b,及一個位置是它們被定位成更遠離中心點以固持較大的晶圓尺寸22a。真空墊122a、122b及122c可調整至各種不同的角度以容納複數個不同尺寸的晶圓。
圖10A及圖10B描繪根據本揭示的第一例示實施例的與機器人手臂80一起使用的端效器100。如所示,端效器100可被可移除地附接至機器人手臂80(如
圖10A中示意所示),且可取決於所須支撐的晶圓的尺寸及數目而與不同尺寸或不同形狀的端效器互換。機器人手臂80可被定位成接近對準裝置300,以允許端效器100上所搬運的晶圓20、30從對準裝置300移除。機器人手臂80亦可位於接合裝置(未示出)附近,以致晶圓20、30能藉由在機器人手臂80處使用工具交換器84而被傳送於處理單元之間。在一個範例中,工具交換器84可為Schunk SWS-011型,但其他工具交換件可亦被使用。相較於習用傳送夾具,端效器100具有顯著地減少機器人負載的減少的重量。端效器100亦不須將數對的對準的晶圓20、30繞機器人80的互換器82的軸線翻轉(例如,分別將頂部及底部的晶圓20、30交換),這造成更容易的整體處置及較低的對準轉移風險。
藉由使用相對於圖4至圖10B所描述的端效器100,成對的晶圓20、30可根據本領域已知的方法及處理在對準裝置300內被放置於對準器中且被對準。一旦被對準,端效器100可被使用來從對準器移除對準的成對的晶圓20、30。圖11A至圖11H示意地揭示根據本揭示的第一例示實施例的以圖4的端效器100將對準的晶圓對從對準器卸載的步驟的剖面圖。雖然各圖僅一般地繪示端效器100的單一個夾鉗-間隔件總成130a,要注意的是,相同功能亦可藉由端效器100所包括的其他總成來完成,使得相同或相似功能同時或在相異但預定的時間發生於端效器上的三個以上的點。
首先,圖11A描繪晶圓20、30,其已經相對於彼此被對準且被保持與對準裝置300的上晶圓的夾頭320及下晶圓的夾頭330接觸。在對準裝置300中,搬運上晶圓的夾頭320的上階台被固定,而搬運下晶圓的夾頭330的下階台係垂直地(亦即,在z方向上)可移動,如98所指示。晶圓20、30已經在x方向(例如,圖11B中的方向92)、y方向(出頁面)上、及在角度上相對於彼此被對準,使得晶圓係平行。晶圓20、30分別具有邊緣20e、30e,且邊緣20e、30e從對準裝置300的夾頭320及330的側突出。
如圖11B中所示,端效器100沿著方向91被帶至接近對準裝置300的夾頭320及330的側,以開始卸載處理。如所示意地顯示,端效器100具有可被裝配至機器人(未示出)的框架構件110,而浮動載具120相對於框架構件110沿著方向90係可移動。為了於說明中簡化,框架構件110可被考量為被固定,因為它相對於機器人的端效器100被附接至的端部係靜止不動的,而浮動載具120被考量為可移動的,因為它相對於機器人的端效器100被附接至的端部係可移動的。限制部134a被連接至框架構件110且在浮動載具120中被定位於孔135a內,其中限制部134a與孔135a的側壁之間的餘隙允許相對於框架構件110沿著方向92的稍微側向移動。
在圖11B所示的此開始狀態中,端效器100在打開組態中被定位成接近對準裝置300,其中各種不同
夾鉗及間隔裝置被縮回。浮動載具120位於與框架構件110耦接或接觸的位置。接著,如圖11C中所示,浮動載具120被從框架構件110脫離,而端效器100沿著方向97b(z方向)向下移動。浮動載具120從框架構件110的脫離在防止機器人搬運端效器100的小振動被轉移至對準裝置300、以及防止造成晶圓20、30的不想要的移動及造成它們變成非對準上是重要的。端效器100的移動可為僅數毫米,直到真空墊122a與晶圓20的邊緣20e的頂部表面接觸為止,且框架構件110與浮動載具120之間的距離增加,以致端效器間隔件旗標136a、136b、136c位於晶圓20的邊緣20e的底部表面的下方。選擇地,在此位置,真空墊122a可被啟動來有效地將浮動載具120連接或鎖定至頂部的晶圓20。
接著,在圖11D中,間隔件旗標136a沿著方向92a(x方向)水平地移動,以致它被定位於晶圓20的邊緣20e的底部表面與晶圓30的邊緣30e的頂部表面之間。間隔件旗標136a、136b、136c在z方向上係可撓的,以致它們在沒有將任何顯著的力施加於表面上的情形下能符合晶圓20及30的邊緣20e及30e的表面。接著,如圖11E中所示,下晶圓的夾頭330沿著方向96a被向上移動,直到晶圓30的邊緣30e的頂部表面觸碰間隔件旗標136a的底部表面,這形成晶圓20、30之間的間隙。接著,夾鉗132a被移動,以接觸晶圓30的邊緣30e的底部表面,且將晶圓20、30的邊緣20e、30e分別與它們之間
的插入的間隔件旗標136a而夾鉗在一起,如圖11F中所示。在此位置,晶圓20、30與其間的間隔件旗標136a被固定在一起,這些全部由端效器100所固持。為了將成對的晶圓20、30從對準裝置300釋放,上晶圓的夾頭320可被沖洗,且然後下晶圓的夾頭330沿著z軸在方向96b上被向下移動至中間位置,藉此,建立頂部的晶圓20與上晶圓的夾頭320之間的隔開距離。然後,下晶圓的夾頭330的真空被釋放,且它在z方向上被更向下移動,直到對準的成對的晶圓20、30在邊緣20e、30e處由端效器100整個地所固持,且準備好被傳送出對準裝置300,如圖11H中所示。
圖12是根據本揭示的第一例示實施例的晶圓對準裝置300的示意圖。晶圓對準裝置300可作為對準器的範例,其中圖11A至圖11H中的處理被使用。如圖12中所示,對準裝置300可另包括具有氣動z軸的間隔件旗標載運器360、靜態支撐橋件365、支撐框架390、頂部基板的夾頭320、底部基板的夾頭330、及WEC間隔件旗標機構380,這些元件在名稱為“APPARATUS AND METHOD FOR SEMICONDUCTOR WAFER ALIGNMENT”的美國專利第8,139,219號中被描述,其是共同擁有且其內容在此以參照方式被特別併入。
圖13A至圖13H示意地描繪根據本揭示的第一例示實施例的以圖4的端效器將對準的晶圓對裝載入接合器的步驟之剖面圖。處理站中的使對準的晶圓20、30
能用機器人手臂80及端效器100來傳送及裝載的一個是接合器400。圖13A繪示在晶圓被放置於接合器室410內以前,在閒置狀態下的接合器400。接合器400包括被放置於接合器室410的下方及上方的底部夾頭430及頂部夾頭420,底部夾頭430及頂部夾頭420兩者能夠保持加熱狀態來接合晶圓。頂部夾頭420及底部夾頭430中的一個或兩個能沿著z軸垂直地可移動。在許多接合器400設計中,僅夾頭中的一個將為可移動的,而其他的夾頭維持靜止不動。接合器間隔件旗標138a被包括於接合器400中,且可被附接至接合器400的下階台,使得接合器間隔件旗標138a與下夾頭430垂直地移動,藉此,維持相對於底部夾頭430的恆常位置。雖然各圖為了揭示的清楚性而一般地繪示單一個接合器間隔件旗標138a,要注意的是,三個以上的接合器間隔件旗標138a、138b、138c(圖7)可被使用於接合器400中,使得相同或相似功能同時或在相異但預定的時間發生於接合器上的三個以上的點。
使用端效器100的接合處理與使用習用傳送夾具的接合處理實質地不同。習用傳送夾具將對準的晶圓傳送至接合裝置中,且必須在整個接合處理期間維持於接合裝置中。相對地,本揭示的端效器100允許對準的晶圓傳送至接合裝置中,且然後在接合處理以前被從接合室移除。因此,相較於習用傳送夾具所經歷的500℃溫度及長達小時的期間,端效器100可在接合裝置中僅經歷閒置溫度(例如,近似300℃)的短暫期間。結果,端效器100
經歷較少的機械及溫度應力,且需要較少的維護,這造成增加效率及降低成本。
綜觀而言,根據本揭示的接合被達成,部分是由於晶圓之間所插入接合器間隔件旗標138a的使用,藉此,允許端效器間隔件旗標136a、136b、及136c被移除,且整個端效器100被從接合室移除。對準且隔開的晶圓然後被以銷455a、455b、及455c銷定,且然後接合力被施加於銷定的晶圓20、30上。一旦接合完成,端效器100可被使用來從接合裝置移除接合的晶圓。
以端效器100在接合器400中裝載晶圓20、30的對準對的處理的額外細節相對於圖13B至圖13H被提供。先參照圖13B,對準及夾鉗的晶圓20、30由端效器100所搬運且被插入至接合器室410中。在此接合器組態中,頂部夾頭420被固定,且底部夾頭430經由z驅動器450而沿著方向425係可移動,但要注意的是,接合器400可具有可移動及固定的夾頭的任何組態。如先前所提及,端效器以夾鉗-間隔件總成130a、130b、及130c固持晶圓20、30的邊緣20e、30e,且晶圓20、30沿著方向99被插入至接合器室410中,以致邊緣20e、30e從接合器400的裝載側突出,如圖13B中所示。在此開始狀態,浮動載具120與框架構件110接觸,且晶圓邊緣20e、30e被夾鉗在一起。
接著,如圖13C中所示,具有夾鉗的晶圓20、30的浮動載具120從框架構件110脫離,使得它沿
著方向90b向下移動,且晶圓20、30被放置於底部夾頭430上,以致晶圓30的底部表面與底部夾頭430的頂部表面接觸。在許多另外選擇的一個中,具有夾鉗的晶圓20、30的浮動載具120能夠沿著方向90a向上移動,且晶圓20、30被放置於頂部夾頭420的底部表面上,以致晶圓20的頂部表面與頂部夾頭420的底部表面接觸。如所示,底部夾頭430可沿著底部夾頭430的周圍的部分具有一個以上的缺口432,這可允許端效器100的適當餘隙,以將晶圓20、30放置於接合器400內,例如因此晶圓20、30的外邊緣能被與頂部夾頭420及底部夾頭430的周圍實質地對準。接著,雖然端效器間隔件旗標136a維持於晶圓20、30之間的位置,一個以上的銷455a能被帶至與晶圓20的頂部表面在一個以上的位置接觸,如圖13D中所示。
在工業界中,所欲的是,將晶圓儘可能地有效率地接合以增加產能。增加接合的晶圓對的產能的一個技術是,即便是在接合器400並未主動地接合晶圓時,在接合器400中保持高溫,藉此,減少接合器400在每個循環升高至操作溫度所需的時間。然而,將對準的晶圓放置在已經加熱的接合器400中(例如,400℃的等級)能影響晶圓20、30的對準。例如,將晶圓20、30經歷此類的加溫環境能造成晶圓20、30徑向地擴張,所以所欲的是,將晶圓20、30快速地銷定在一起,且儘可能地精確。雖然晶圓20、30能在不同的位置處被銷定,較佳的
是,將晶圓20、30在其中心點處一起銷定,而非沿著徑向邊緣,藉此,避免了晶圓20、30從偏心點的熱擴張造成非對準的情形。在圖13D至圖13F,銷455a被顯示成位於晶圓20、30的中心,但銷455a的數目及這些銷的位置能變化,如相對於圖15A至圖15C所討論。
然後,如圖13E中所示,雖然晶圓20、30被以一個以上的銷455a維持,被定位於接近晶圓20、30的邊緣部的一個以上接合器間隔件旗標138a沿著方向411b之間被插入於晶圓20、30之間。接合器間隔件旗標138a可較端效器間隔件旗標136a更薄,且因此它們能被插入於被繞端效器間隔件旗標136a所夾鉗的晶圓20、30之間。在一個範例中,接合器間隔件旗標138a可近似100微米,而端效器間隔件旗標136a可近似200微米。
接著,夾鉗132a、132b、132c被釋放,且它們從晶圓30的底部表面的邊緣30e脫離,如圖13F所示。要注意的是,夾鉗可根據像是一起地、相繼地或其組合的預定例行處理來移除。在夾鉗132a、132b、及132c的釋放以後,端效器間隔件旗標136a被沿著方向92b從兩個晶圓20、30之間的空間移除,如圖13G所示。三個以上的接合間隔件旗標138a繞晶圓20、30的周圍維持在晶圓20、30之間的位置。一般地,接合器間隔件旗標138a將會被定位成沿著晶圓20、30的周圍接近端效器間隔件旗標136a的位置,如圖9中所示。在端效器間隔件旗標136a被移除以後,由於維持於晶圓20、30之間的附
近接合器間隔件旗標,晶圓20、30之間的隔開間隙將依舊存在,如圖13G至圖13H中所示。
最後,端效器100沿著方向97a向上移動,直到真空墊122a、122b、122c從晶圓20的邊緣20e的頂部表面脫離為止,這將被銷定的晶圓20、30留在底部夾頭430上,如圖13H所示。在此階段中,端效器100被從接合器400整個移除,如圖13I所示,且晶圓接合能開始。在晶圓接合處理的初始階段中,晶圓20、30繞接合器間隔件旗標138a的被接合在一起。在力施加以前,接合器間隔件旗標138a被移除。在接合處理完成以後,被接合的成對的晶圓20、30被以端效器100從接合器400移除。
圖14描繪根據本揭示的第一例示實施例的被定位來接收圖4的端效器之接合器。確切地,圖14的接合器400可具有不同設計的固定及可移動的組件。在圖13A至圖13H,接合器400被設計,以致上夾頭420被固定,且下夾頭430係沿著z軸線可移動。在圖14中所示的接合器400的設計中,下夾頭430被固定,且上夾頭420沿著方向426移動,直到上夾頭420的底部表面接觸頂部的晶圓的頂部表面為止。接合器400的頂部夾頭420及/或底部夾頭430的移動的所有變型能被與本揭示的裝置、系統、及方法一起使用。
圖15A至圖15C描繪接合器中所使用的銷的變型。圖15A描繪根據本揭示的第一例示實施例的經由單
一個中心銷將兩個晶圓銷定的示意圖。圖15B描繪根據本揭示的第一例示實施例的經由中心銷及偏心防止旋轉銷將兩個晶圓銷定的示意圖。圖15C描繪根據本揭示的第一例示實施例的經由三個周圍銷將兩個晶圓銷定的示意圖。一起參照圖15A至圖15C,銷455a、455b、455c中的一個以上可在一個以上的不同位置被帶至與晶圓20的頂部表面接觸。較佳的是,使用被定位於晶圓20、30的中心的單一個銷455a,如圖15A所示。在中心使用單一個銷455a可允許晶圓20、30在沒有經歷未對準的情形下熱擴張。
在一個另外選擇中,晶圓20、30可用兩個銷455a、455b被銷定,如圖15B中所示。在此,銷455a是中心銷,且銷455b是防止旋轉銷,使得銷455b防止晶圓20、30的旋轉。在此設計中,中心銷455a比防止旋轉銷455b可將較大的銷定力施加至晶圓20、30。額外地,偏心的銷455b可為徑向順應,因為它可沿著晶圓20、30的半徑為可移動,以順應晶圓的熱膨脹。在圖15C所示的另一個另外選擇中,三個銷455a、455b、455c可被使用,其中它們可被配置於晶圓20、30的周圍處,像是在接合器間隔件旗標138a的每一個附近。它們可繞晶圓20、30周圍被實質等距地隔開,像是彼此以120度隔開。亦有可能的是,使用這些組態的組合、或未明確地顯示的其他銷組態。例如,可為所欲的是,使用圖15A的中心銷及圖15C的三個周圍銷。
圖16是根據本揭示的第一例示實施例的例示晶圓接合器的示意圖。如圖16中所示,接合器400另包括具有薄膜力及馬達定位的壓力頭460、具有壓力板及上銷455的接合頭470、接合器間隔件旗標機構480、具有夾心板及沖洗部的下加熱器490、以及靜態的Z軸支撐柱495。接合器400的這些及其他組件在名稱為“APPARATUS AND METHOD FOR SEMICONDUCTOR BONDING”的美國專利第7,948,034號中被描述,其是共同擁有且其內容在此以參照方式被特別併入。
圖17是根據本揭示的第一例示實施例的與晶圓接合器400一起使用的例示接合器間隔件旗標機構的示意圖。參照圖16至圖17,接合器間隔件旗標機構480可被使用來將接合器間隔件旗標138a、138b、138c(如圖7中所示)移動於對準的晶圓對之間的插入及縮回位置之間。在一個範例中,接合器間隔件旗標機構480可具有被安裝至環件484的氣動活塞482,環件484被定位成繞Z軸支撐柱495且位於下加熱器490的下方。氣動活塞482搬運支撐接合器間隔件旗標138a的架486。當氣動活塞482被啟動時,它能以徑向方向朝向及離開接合區域的中心移動。接合器間隔件旗標138a的移動可藉由架486可滑動於上的軌488而被導引。這些結構可允許接合器間隔件旗標138a具有徑向順應性,藉此,允許在晶圓經歷熱擴張時接合器間隔件旗標138a在徑向方向上與晶圓20、30的移動。氣動控制裝置以外的其他機械及電動機械裝
置亦可被使用來移動接合器間隔件旗標138a。
習用接合裝置已經使用一個以上的銷來壓縮晶圓,但這些裝置以銷提供有限的力控制。在一個範例中,習用銷具有由僅能夠將恆常壓力施加至晶圓的壓縮彈簧或類似裝置所建立的單一力。結果,當頂部及底部夾頭壓縮晶圓時,晶圓的與銷的區域具有較由夾頭所接觸的區域更少的施加於它的壓力,這在造成晶圓的接觸銷的部分機械性高產出損失。同時,習用銷的較低熱傳導性在晶圓與銷對準的部分處造成熱性高產出損失。當這些問題被與習用銷具有較大直徑及大的環繞間隙(一般約12mm至14mm)的事實結合時,機械性及熱性高產出損失相加成為晶圓接合的顯著無效率。
為了克服這些問題,本發明設想將機械性產出損失及熱性產出損失兩者減少之銷455a。為此目的,圖18A及圖18B是根據本揭示的第一例示實施例的銷的一個範例的示意圖。如所示,銷455a可延伸通過接合裝置的頂部夾頭420,使得它能移動至晶圓(未示出)會被定位來接合的接合器室410區域中。在一個範例中,銷455a可為直徑5mm,且被定位於頂部夾頭420內的6mm孔內,以提供銷455a至頂部夾頭420的近似0.5mm的餘隙。相較於具有大約12mm至14mm的銷和間隙直徑之先前技術的銷,具有6mm的直徑和間隙的銷455a可大大地改善機械性高產出損失。額外地,不像使用壓縮彈簧致動器來提供機械力之習用銷,銷455a可使用氣動致動器來
控制銷455a在晶圓上的力。結果,由銷455a所施加的壓力可被選擇來實質匹配夾頭的壓力力量,藉此,進一步減少機械性產出損失。
銷455a可由鈦、像是氮化矽陶瓷的陶瓷、及其他材料所建構,且可包括由下管件或套筒504及上管件或套筒505所環繞的中心銷502,下管件或套筒504沿著銷455a的底部被定位,上管件或套筒505具有薄壁且沿著銷455a的上部被定位。下套筒504及上套筒505可像是利用熔接或其他技術在接近中心銷502的接頭處被連接在一起。中心銷502可包括平的銷尖端506。上套筒505可藉由環繞的夾頭420及/或與被定位於夾頭420的上方的加熱器526鄰接的加熱器銷532而被主動地加熱,如相對於圖18B所進一步描述,且中心銷502亦可由環繞的夾頭420所加熱。額外地,有可能用與銷455a的結構整合的電阻加熱元件來將銷455a加熱的元件。在一些設計中,從夾頭420的被動加熱及從電阻加熱元件的主動加熱兩者可被使用來加熱銷455a的各種不同組件。
銷455a接近尖端處可為徑向順應,使得它以+/- 0.5mm被預載至中心,其中頂部中心定位以允許銷尖端。將銷455a預載允許銷455a在被致動時具有自然且置中的位置,但一旦受力時亦允許銷455a為徑向順應。結果銷455a能保持正常力施加於晶圓上。
銷455a的額外機構如圖18B詳細顯示。銷455a被定位成實質地置中於具有中心銷襯套512(亦被知
曉為瞄孔襯套(peek bushing))的中心殼體510內,中心銷襯套512本身具有襯套裝配部,其具有用來放置中心銷455a的小的長對直徑比514。中心銷襯套512提供銷455a的與接合器400的環繞機構的電隔絕,這對於相當高的電壓可被使用來接合晶圓之陽極合處理是重要的。室唇部516及不鏽鋼力反應板518亦被定位成環繞中心銷襯套512。朝向中心銷襯套的下端是預載於由矽膠或類似材料所製成的中心徑向順應O型環520之少量力。O型環520允許中心銷502及環繞的管件504在接合器400內徑向地移動。鋁冷卻凸緣522被定位於力反應板518的下方,且熱隔絕構件524被定位於冷卻凸緣522的下方,以將加熱器526熱隔絕。
冷卻凸緣522的內部是環繞中心銷502的一部分之襯套528。襯套528及熱隔絕構件524可由像是以商品名稱ZERODUR®所販售者的鋰鋁矽酸鹽玻璃陶瓷、或類似材料。襯套528可在兩側具有插入腔530,其作用為重疊部以在真空中提供具有低空氣介電性的電隔絕。被定位在襯套528的下方及繞中心銷502及管件504的下邊緣的是加熱器銷532。加熱器銷532可由氮化矽所形成,且可與襯套528的下插入腔530嚙合。加熱器銷532亦可沿著加熱器526的厚度及上夾頭420的至少一部分界接中心銷502及管件504。加熱器銷532的與加熱器526鄰接的定位、以及被使用來建構加熱器銷532的材料可允許從加熱器526通過加熱器銷532有效率熱傳且傳至中心銷
502及管件504的。這能允許中心銷502及管件504具有實質匹配頂部夾頭420的溫度之溫度,因為所有結構被定位來將熱從加熱器526適當地傳送至它們接觸晶圓的部分。因此,習用銷經歷的熱產出損失可被顯著地改善。增加銷455a的熱連接性且同時能夠控制銷455a的力施加能超越先前技術先前所達到者而改善晶圓接合。
圖19是繪示根據本揭示的第一例示實施例的將對準的晶圓對放置至接合裝置中的方法的流程圖。應注意的是,流程圖中的任何處理描述或方塊應被理解成代表模組、區段、部分、規則的部分、或是包括一個以上的指示以於施作處理中的確切邏輯功能之步驟,且替代的施作被包括於本揭示的範圍內,其中功能取決於涉及的功能性可用與所示或所討論者不同的順序(包括實質同時或倒轉的順序)來執行,而如本揭示的領域中的具有合理技術者所能瞭解。
如方塊602所示,晶圓用端效器以隔開對準的方式被固定,端效器具有框架構件、以及被可移動地連接至框架構件的浮動載具。機器人被使用來移動端效器,藉此,將晶圓移動至接合器的接合室中(方塊604)。晶圓被從端效器卸載(方塊606)。端效器被從接合室移除(方塊608)。晶圓被接合(方塊610)。此方法可另包括相對於本揭示的任何圖所揭示的步驟、處理、或功能的任一個。
應強調的是,本揭示的以上所描述的實施
例、特別是“較佳的”實施例僅為施作的可能範例,其僅提出用於本揭示的原理的清楚瞭解。在沒有實質背離本揭示的精神及原理的情形下,可對以上所描述的實施例進行許多變型及修改。所有這樣的修改及變型旨在在此被包括於此揭示的範圍及本揭示內,且由以下申請專利範圍所保護。
18:晶圓對
20:晶圓
24:傳送夾具
30:晶圓
50:對準器站
60:接合站
80:機器人手臂
100:端效器
300:對準裝置
400:接合器
Claims (20)
- 一種將對準的晶圓放置至接合裝置中的方法,該將對準的晶圓放置至接合裝置中的方法包含:以端效器將晶圓以隔開對準的方式固定,該端效器具有框架構件及被可移動地連接至該框架構件的浮動載具;使用機器人移動該端效器,藉此,移動該等晶圓至接合器的接合室中;將該等晶圓從該端效器卸載;將該端效器從該接合室移除;及將該等晶圓接合。
- 如申請專利範圍第1項所述的將對準的晶圓放置至接合裝置中的方法,其中該等晶圓藉由使用複數個夾鉗-間隔件總成而以隔開對準的方式被固定,該複數個夾鉗-間隔件總成被連接至該框架構件及該浮動載具中的至少一個。
- 如申請專利範圍第2項所述的將對準的晶圓放置至接合裝置中的方法,其中該複數個夾鉗-間隔件總成在該浮動載具的半圓形內周上被實質等距地隔開。
- 如申請專利範圍第1項所述的將對準的晶圓放置至接合裝置中的方法,其中將該等晶圓從該端效器卸載另包含將該浮動載具從該框架構件脫離。
- 如申請專利範圍第1項所述的將對準的晶圓放置至接合裝置中的方法,其中將該等晶圓從該端效器卸載另包含: 將至少一個接合器間隔件旗標插入於該等晶圓之間;及將至少一個端效器間隔件旗標從該等晶圓之間移除。
- 如申請專利範圍第1項所述的將對準的晶圓放置至接合裝置中的方法,其中以該端效器將晶圓以隔開對準的方式固定另包含以被連接至該浮動載具的複數個真空墊維持該等晶圓,其中該複數個真空墊中的每一個在該浮動載具的半圓形內周的內部延伸。
- 如申請專利範圍第6項所述的將對準的晶圓放置至接合裝置中的方法,另包含在該浮動載具上徑向地沿著該半圓形內周調整該複數個真空墊的位置。
- 如申請專利範圍第6項所述的將對準的晶圓放置至接合裝置中的方法,另包含相對於該框架構件沿著該半圓形內周的軸線調整該浮動載具,其中該浮動載具與該框架構件之間的間隙的尺寸是可調整的。
- 如申請專利範圍第1項所述的將對準的晶圓放置至接合裝置中的方法,另包含以置中機構將該浮動載具置中於該框架構件,該置中機構係可移除地可嚙合於該框架構件與該浮動載具之間,其中該置中機構防止該浮動載具相對於該框架構件的位置改變。
- 如申請專利範圍第1項所述的將對準的晶圓放置至接合裝置中的方法,其中從該端效器卸載該等晶圓另包含:將該接合器的夾頭接觸該等晶圓中的至少一個; 以壓縮銷將壓縮力施加至該等晶圓;將至少一個接合器間隔件旗標插入於該等晶圓之間;從該等晶圓移除端效器夾鉗;及從該等晶圓之間移除端效器間隔件旗標。
- 如申請專利範圍第10項所述的將對準的晶圓放置至接合裝置中的方法,其中以該壓縮銷將該壓縮力施加至該等晶圓另包含在該接合器的上夾頭與下夾頭之間將壓縮壓力匹配。
- 如申請專利範圍第10項所述的將對準的晶圓放置至接合裝置中的方法,其中該壓縮銷另包含至少兩個壓縮銷。
- 如申請專利範圍第10項所述的將對準的晶圓放置至接合裝置中的方法,另包含將該壓縮銷的溫度與該接合器的上夾頭的溫度實質地匹配。
- 如申請專利範圍第1項所述的將對準的晶圓放置至接合裝置中的方法,其中將該等晶圓接合另包含在接合處理期間在該等晶圓未與該端效器接觸的情形下將該等晶圓以隔開對準的方式接合。
- 一種將對準的晶圓對放置至處理裝置中的方法,該將對準的晶圓對放置至處理裝置中的方法包含:以端效器將晶圓以隔開對準的方式搬運,該端效器具有框架構件及浮動載具,其中該浮動載具被可移動地連接至該框架構件;以被連接至該端效器的機器人手臂改變該端效器的位 置;及將該等晶圓以隔開對準的方式放置至處理裝置的處理室中,此係藉由在該框架構件及該浮動載具被定位於該處理室內時將該浮動載具從該框架構件脫離。
- 如申請專利範圍第15項所述的將對準的晶圓對放置至處理裝置中的方法,其中放置至該處理室中另包含:將該處理裝置的夾頭與該等晶圓中的至少一個接觸;以壓縮銷將壓縮力施加至該等晶圓;將至少一個接合器間隔件旗標插入於該等晶圓之間;從該等晶圓移除端效器夾鉗;及從該等晶圓之間移除端效器間隔件旗標。
- 如申請專利範圍第16項所述的將對準的晶圓對放置至處理裝置中的方法,其中以該壓縮銷將該壓縮力施加至該等晶圓另包含在該處理裝置的上夾頭與下夾頭之間將壓縮壓力匹配。
- 如申請專利範圍第16項所述的將對準的晶圓對放置至處理裝置中的方法,另包含將該壓縮銷的溫度與該處理裝置的上夾頭的溫度實質地匹配。
- 如申請專利範圍第16項所述的將對準的晶圓對放置至處理裝置中的方法,其中以該壓縮銷將該壓縮力施加至該等晶圓另包含以至少兩個壓縮銷施加壓力,其中該至少兩個壓縮銷的至少一個將壓力施加於該等晶圓的實質中心點處,且該至少兩個壓縮銷的至少一個將壓力施加於 偏離該等晶圓的該實質中心點之處。
- 一種以端效器傳送對準的晶圓的方法,該以端效器傳送對準的晶圓的方法包含:以被連接至該端效器的浮動載具之複數個真空墊維持至少兩個對準的晶圓,其中該浮動載具被連接至框架構件,在該浮動載具與該框架構件之間形成有間隙,且其中該浮動載具具有半圓形內周,該複數個真空墊中的每一個在該浮動載具的該半圓形內周的內部延伸;及以機器人手臂將該端效器移動。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562161988P | 2015-05-15 | 2015-05-15 | |
US62/161,988 | 2015-05-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201712789A TW201712789A (zh) | 2017-04-01 |
TWI706502B true TWI706502B (zh) | 2020-10-01 |
Family
ID=57208539
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105114716A TWI718149B (zh) | 2015-05-15 | 2016-05-12 | 用於處置對準的晶圓對之設備及系統 |
TW105114719A TWI706502B (zh) | 2015-05-15 | 2016-05-12 | 用於處置對準的晶圓對之方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105114716A TWI718149B (zh) | 2015-05-15 | 2016-05-12 | 用於處置對準的晶圓對之設備及系統 |
Country Status (7)
Country | Link |
---|---|
US (3) | US10825705B2 (zh) |
JP (2) | JP6785062B2 (zh) |
KR (2) | KR102210304B1 (zh) |
CN (2) | CN106158714B (zh) |
AT (2) | AT517258B1 (zh) |
DE (2) | DE102016108787B4 (zh) |
TW (2) | TWI718149B (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10825705B2 (en) * | 2015-05-15 | 2020-11-03 | Suss Microtec Lithography Gmbh | Apparatus, system, and method for handling aligned wafer pairs |
US11183401B2 (en) * | 2015-05-15 | 2021-11-23 | Suss Microtec Lithography Gmbh | System and related techniques for handling aligned substrate pairs |
JP6700130B2 (ja) * | 2016-07-12 | 2020-05-27 | 東京エレクトロン株式会社 | 接合システム |
US9975255B1 (en) * | 2016-12-15 | 2018-05-22 | Jabil Inc. | Apparatus, system and method for providing a conformable vacuum cup for an end effector |
CN109256353B (zh) * | 2017-07-12 | 2021-10-22 | 家登精密工业股份有限公司 | 定位底座 |
KR102385573B1 (ko) * | 2017-12-13 | 2022-04-12 | 삼성전자주식회사 | 로드 컵 및 이를 포함하는 화학기계적 연마 장치 |
CN110581097B (zh) * | 2018-06-07 | 2024-03-29 | 佳宸科技有限公司 | 宽度可调式移动机构 |
CN110660723B (zh) * | 2018-06-29 | 2022-05-10 | 上海微电子装备(集团)股份有限公司 | 一种机械手、键合腔体、晶圆键合系统及键合方法 |
KR20200102612A (ko) * | 2019-02-21 | 2020-09-01 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
CN111211084A (zh) * | 2020-01-17 | 2020-05-29 | 长江存储科技有限责任公司 | 晶圆承载装置 |
CN111916384B (zh) * | 2020-08-17 | 2022-05-17 | 鑫天虹(厦门)科技有限公司 | 一种键合机对准模块和键合机 |
KR20220030454A (ko) | 2020-09-01 | 2022-03-11 | 삼성전자주식회사 | 기판 정렬 장치 및 이를 구비하는 기판 본딩 설비 |
CN113921455A (zh) * | 2021-09-29 | 2022-01-11 | 北京北方华创微电子装备有限公司 | 半导体工艺设备及其晶圆支撑结构 |
US20230360940A1 (en) * | 2022-05-03 | 2023-11-09 | Applied Materials, Inc. | Wafer film frame carrier |
WO2024010711A1 (en) * | 2022-07-05 | 2024-01-11 | Lam Research Corporation | End effector |
CN115424958B (zh) * | 2022-09-16 | 2023-06-23 | 浙江嘉辰半导体有限公司 | 一种双面散热半导体封装结构及其工艺 |
CN117174643B (zh) * | 2023-10-07 | 2024-09-03 | 合肥开悦半导体科技有限公司 | 一种机械手臂 |
CN117049125B (zh) * | 2023-10-11 | 2023-12-26 | 合肥铠柏科技有限公司 | 一种可自适应样品架角度误差样品传输器 |
CN117174624B (zh) * | 2023-11-02 | 2024-04-12 | 迈为技术(珠海)有限公司 | 一种键合设备及键合方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030196870A1 (en) * | 2000-09-01 | 2003-10-23 | Babbs Daniel A. | Edge grip aligner with buffering capabilities |
TW201008729A (en) * | 2008-07-30 | 2010-03-01 | Fabworx Solutions Inc | Edge grip end effector |
US20140295656A1 (en) * | 2013-04-01 | 2014-10-02 | Brewer Science Inc. | Apparatus and method for thin wafer transfer |
Family Cites Families (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR970003907B1 (ko) * | 1988-02-12 | 1997-03-22 | 도오교오 에레구토론 가부시끼 가이샤 | 기판처리 장치 및 기판처리 방법 |
JP2867194B2 (ja) * | 1992-02-05 | 1999-03-08 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
US5784797A (en) * | 1994-04-28 | 1998-07-28 | Semitool, Inc. | Carrierless centrifugal semiconductor processing system |
JP3892494B2 (ja) | 1996-01-26 | 2007-03-14 | 東京エレクトロン株式会社 | 基板搬送装置 |
JP3722598B2 (ja) * | 1997-07-16 | 2005-11-30 | 株式会社ダイヘン | 2アーム方式の搬送用ロボット装置 |
JPH1167873A (ja) * | 1997-08-26 | 1999-03-09 | Hitachi Ltd | 半導体ウエハの処理方法および装置 |
JP2001225292A (ja) * | 2000-02-15 | 2001-08-21 | Sumitomo Heavy Ind Ltd | ワークグリップ機構 |
EP1129671B1 (de) * | 2000-03-03 | 2004-05-06 | Theo J.J. Zegers | Kopfhalterungsvorrichtung für chirurgische Zwecke |
DE10230373B3 (de) | 2002-07-05 | 2004-03-04 | Süss Microtec Lithography Gmbh | Vorrichtung und Verfahren zum Bonden eines Stapels aus drei oder mehr scheibenförmigen Substraten, insbesondere eines 3-Wafer-Stacks |
US20060120832A1 (en) * | 2004-11-08 | 2006-06-08 | Rajeshwar Chhibber | Method and apparatus for handling a substrate |
GB2425589A (en) * | 2005-04-30 | 2006-11-01 | Manh Han | Adjustable connection ring for photographic softbox or lighting umbrella |
KR100746850B1 (ko) * | 2005-05-27 | 2007-08-07 | 주식회사 엔씨비네트웍스 | 반도체 웨이퍼 이송장치 |
JP4439464B2 (ja) * | 2005-12-06 | 2010-03-24 | 東京エレクトロン株式会社 | 基板搬送方法及び基板搬送装置 |
JP2007210079A (ja) | 2006-02-10 | 2007-08-23 | Tokyo Seimitsu Co Ltd | ワーク搬送装置及びワーク搬送方法 |
US7948034B2 (en) | 2006-06-22 | 2011-05-24 | Suss Microtec Lithography, Gmbh | Apparatus and method for semiconductor bonding |
JP4854427B2 (ja) | 2006-08-11 | 2012-01-18 | 東京エレクトロン株式会社 | 基板移載装置,基板処理装置,基板移載用アーム |
TWI533394B (zh) | 2007-06-21 | 2016-05-11 | 尼康股份有限公司 | Conveying method and conveying device |
EP2215651A1 (en) * | 2007-11-23 | 2010-08-11 | Lam Research AG | Device and process for wet treating a peripheral area of a wafer-shaped article |
US8139219B2 (en) | 2008-04-02 | 2012-03-20 | Suss Microtec Lithography, Gmbh | Apparatus and method for semiconductor wafer alignment |
KR20100034450A (ko) * | 2008-09-24 | 2010-04-01 | 삼성전자주식회사 | 기판접합장치 |
JP5178495B2 (ja) * | 2008-12-22 | 2013-04-10 | 株式会社日立ハイテクノロジーズ | 試料搬送機構、及び試料搬送機構を備えた走査電子顕微鏡 |
EP2419928A2 (en) * | 2009-04-16 | 2012-02-22 | Süss Microtec Lithography GmbH | Improved apparatus for temporary wafer bonding and debonding |
JP2011205004A (ja) * | 2010-03-26 | 2011-10-13 | Sokudo Co Ltd | 基板処理装置および基板処理方法 |
US8567837B2 (en) * | 2010-11-24 | 2013-10-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reconfigurable guide pin design for centering wafers having different sizes |
FR2972078A1 (fr) | 2011-02-24 | 2012-08-31 | Soitec Silicon On Insulator | Appareil et procédé de collage par adhésion moléculaire |
JP5490741B2 (ja) * | 2011-03-02 | 2014-05-14 | 東京エレクトロン株式会社 | 基板搬送装置の位置調整方法、及び基板処理装置 |
IL218981A (en) * | 2011-05-12 | 2015-10-29 | Semiconductor Tech & Instr Inc | System and method for using multi-component windshield holders in the appropriate configuration to handle and move windshield components |
TWI523134B (zh) * | 2011-09-22 | 2016-02-21 | 東京威力科創股份有限公司 | 基板處理系統、基板搬運方法、及電腦記憶媒體 |
US8985929B2 (en) * | 2011-09-22 | 2015-03-24 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method and storage medium |
JP5582152B2 (ja) * | 2012-02-03 | 2014-09-03 | 東京エレクトロン株式会社 | 基板搬送装置、基板搬送方法及び記憶媒体 |
JP5673577B2 (ja) | 2012-02-07 | 2015-02-18 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
SG194239A1 (en) * | 2012-04-09 | 2013-11-29 | Semiconductor Tech & Instr Inc | End handler |
JP6001934B2 (ja) | 2012-06-25 | 2016-10-05 | 東京応化工業株式会社 | 重ね合わせ装置および重ね合わせ方法 |
JP6118044B2 (ja) * | 2012-07-19 | 2017-04-19 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP5886821B2 (ja) * | 2013-01-04 | 2016-03-16 | ピーエスケー インコーポレイテッド | 基板処理装置及び方法 |
US9061423B2 (en) | 2013-03-13 | 2015-06-23 | Varian Semiconductor Equipment Associates, Inc. | Wafer handling apparatus |
CN105408991B (zh) | 2013-05-23 | 2019-07-16 | 株式会社尼康 | 基板保持方法和基板保持装置以及曝光方法和曝光装置 |
JP6190645B2 (ja) * | 2013-07-09 | 2017-08-30 | 東京エレクトロン株式会社 | 基板搬送方法 |
KR101416421B1 (ko) * | 2013-07-17 | 2014-07-09 | 현대자동차 주식회사 | 차량용 어시스트 핸들 |
EP3796365A3 (de) | 2013-09-25 | 2021-08-18 | EV Group E. Thallner GmbH | Vorrichtung und verfahren zum bonden von substraten |
CN105556654B (zh) | 2013-09-26 | 2019-07-26 | 应用材料公司 | 用于传送基板的气动终端受动器装置、基板传送系统与方法 |
US20150206783A1 (en) | 2014-01-20 | 2015-07-23 | Suss Microtec Lithography, Gmbh | System amd method for substrate holding |
KR20160048301A (ko) | 2014-10-23 | 2016-05-04 | 삼성전자주식회사 | 본딩 장치 및 그를 포함하는 기판 제조 설비 |
US10755960B2 (en) | 2014-11-04 | 2020-08-25 | Brooks Automation, Inc. | Wafer aligner |
JP6412786B2 (ja) | 2014-12-03 | 2018-10-24 | 東京応化工業株式会社 | 搬送方法 |
FR3031046B1 (fr) * | 2014-12-24 | 2018-06-29 | Solystic | Installation pour la separation et l'individualisation d'objets postaux heterogenes |
US10825705B2 (en) | 2015-05-15 | 2020-11-03 | Suss Microtec Lithography Gmbh | Apparatus, system, and method for handling aligned wafer pairs |
TWM513454U (zh) * | 2015-05-29 | 2015-12-01 | Episil Technologies Inc | 晶圓傳輸裝置 |
JP6574715B2 (ja) * | 2016-02-01 | 2019-09-11 | 東京エレクトロン株式会社 | 基板搬送方法及び基板処理システム |
KR101817209B1 (ko) * | 2016-06-24 | 2018-02-22 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
-
2016
- 2016-05-10 US US15/150,689 patent/US10825705B2/en active Active
- 2016-05-10 US US15/150,856 patent/US9640418B2/en active Active
- 2016-05-12 DE DE102016108787.4A patent/DE102016108787B4/de active Active
- 2016-05-12 TW TW105114716A patent/TWI718149B/zh active
- 2016-05-12 DE DE102016108788.2A patent/DE102016108788B4/de active Active
- 2016-05-12 KR KR1020160058121A patent/KR102210304B1/ko active IP Right Grant
- 2016-05-12 KR KR1020160058127A patent/KR102173844B1/ko active IP Right Grant
- 2016-05-12 TW TW105114719A patent/TWI706502B/zh active
- 2016-05-13 AT ATA50443/2016A patent/AT517258B1/de active
- 2016-05-13 JP JP2016097183A patent/JP6785062B2/ja active Active
- 2016-05-13 JP JP2016097185A patent/JP6689668B2/ja active Active
- 2016-05-13 AT ATA50442/2016A patent/AT517254B1/de active
- 2016-05-16 CN CN201610323805.9A patent/CN106158714B/zh active Active
- 2016-05-16 CN CN201610323232.XA patent/CN106158706B/zh active Active
-
2020
- 2020-09-23 US US17/029,635 patent/US11651983B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030196870A1 (en) * | 2000-09-01 | 2003-10-23 | Babbs Daniel A. | Edge grip aligner with buffering capabilities |
TW201008729A (en) * | 2008-07-30 | 2010-03-01 | Fabworx Solutions Inc | Edge grip end effector |
US20140295656A1 (en) * | 2013-04-01 | 2014-10-02 | Brewer Science Inc. | Apparatus and method for thin wafer transfer |
Also Published As
Publication number | Publication date |
---|---|
AT517258A3 (de) | 2018-09-15 |
TWI718149B (zh) | 2021-02-11 |
JP6689668B2 (ja) | 2020-04-28 |
JP2017022364A (ja) | 2017-01-26 |
AT517258A2 (de) | 2016-12-15 |
US11651983B2 (en) | 2023-05-16 |
DE102016108788A1 (de) | 2016-11-17 |
CN106158706A (zh) | 2016-11-23 |
JP6785062B2 (ja) | 2020-11-18 |
AT517254A2 (de) | 2016-12-15 |
KR102210304B1 (ko) | 2021-02-02 |
DE102016108788B4 (de) | 2024-02-22 |
CN106158706B (zh) | 2020-11-13 |
KR102173844B1 (ko) | 2020-11-05 |
CN106158714B (zh) | 2020-12-11 |
TW201712789A (zh) | 2017-04-01 |
US20160336208A1 (en) | 2016-11-17 |
DE102016108787A1 (de) | 2016-11-17 |
CN106158714A (zh) | 2016-11-23 |
AT517258B1 (de) | 2020-01-15 |
US20210013079A1 (en) | 2021-01-14 |
JP2017022363A (ja) | 2017-01-26 |
DE102016108787B4 (de) | 2024-02-22 |
US20160336212A1 (en) | 2016-11-17 |
TW201712793A (zh) | 2017-04-01 |
KR20160134539A (ko) | 2016-11-23 |
US10825705B2 (en) | 2020-11-03 |
US9640418B2 (en) | 2017-05-02 |
KR20160134540A (ko) | 2016-11-23 |
AT517254A3 (de) | 2018-09-15 |
AT517254B1 (de) | 2020-01-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI706502B (zh) | 用於處置對準的晶圓對之方法 | |
TWI765054B (zh) | 用來處理已對準的基板對之系統及相關技術 | |
TWI616975B (zh) | Substrate holder and substrate bonding device | |
TWI449118B (zh) | 半導體裝置的製造設備 | |
TW201304034A (zh) | 基板保持裝置、基板貼合裝置、基板保持方法、基板貼合方法、積層半導體裝置及疊合基板 | |
KR101860956B1 (ko) | 기판홀더쌍, 디바이스의 제조방법, 분리장치, 기판의 분리방법, 기판홀더 및 기판 위치맞춤 장치 | |
JP2004207436A (ja) | ウエハのプリアライメント方法とその装置ならびにウエハの貼り合わせ方法とその装置 | |
EP3948939B1 (en) | Semiconductor flipper | |
TW201539645A (zh) | 基片保持系統和方法 | |
JP2009194264A (ja) | 基板貼り合わせ装置 | |
KR101421574B1 (ko) | 웨이퍼 접합 시스템용 웨이퍼 쿨러 언클램핑 조립체 |